CN109461751A - Photoelectric detection system and preparation method thereof, heartbeat detection device and electronic equipment - Google Patents
Photoelectric detection system and preparation method thereof, heartbeat detection device and electronic equipment Download PDFInfo
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- CN109461751A CN109461751A CN201811354307.6A CN201811354307A CN109461751A CN 109461751 A CN109461751 A CN 109461751A CN 201811354307 A CN201811354307 A CN 201811354307A CN 109461751 A CN109461751 A CN 109461751A
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
- H01L27/14605—Structural or functional details relating to the position of the pixel elements, e.g. smaller pixel elements in the center of the imager compared to pixel elements at the periphery
-
- A—HUMAN NECESSITIES
- A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
- A61B—DIAGNOSIS; SURGERY; IDENTIFICATION
- A61B5/00—Measuring for diagnostic purposes; Identification of persons
- A61B5/02—Detecting, measuring or recording pulse, heart rate, blood pressure or blood flow; Combined pulse/heart-rate/blood pressure determination; Evaluating a cardiovascular condition not otherwise provided for, e.g. using combinations of techniques provided for in this group with electrocardiography or electroauscultation; Heart catheters for measuring blood pressure
- A61B5/024—Detecting, measuring or recording pulse rate or heart rate
- A61B5/02444—Details of sensor
-
- A—HUMAN NECESSITIES
- A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
- A61B—DIAGNOSIS; SURGERY; IDENTIFICATION
- A61B5/00—Measuring for diagnostic purposes; Identification of persons
- A61B5/02—Detecting, measuring or recording pulse, heart rate, blood pressure or blood flow; Combined pulse/heart-rate/blood pressure determination; Evaluating a cardiovascular condition not otherwise provided for, e.g. using combinations of techniques provided for in this group with electrocardiography or electroauscultation; Heart catheters for measuring blood pressure
- A61B5/024—Detecting, measuring or recording pulse rate or heart rate
- A61B5/0245—Detecting, measuring or recording pulse rate or heart rate by using sensing means generating electric signals, i.e. ECG signals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
- H01L27/14612—Pixel-elements with integrated switching, control, storage or amplification elements involving a transistor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14687—Wafer level processing
Abstract
Present disclose provides a kind of photoelectric detection system and preparation method thereof, heartbeat detection device and electronic equipments, belong to microelectronics technology.The photoelectric detection system includes underlay substrate, first switch device, photoelectric conversion device, second switch device and electroluminescent device, wherein first switch device is set to the side of the underlay substrate；Photoelectric conversion device is set to the side of the underlay substrate, for converting optical signal into electric signal and being transferred to the first switch device；Second switch device is set to the side of the underlay substrate；Luminescent device is set to the side of the underlay substrate, for shining under the control of the second switch device；The luminescent device and the photoelectric conversion device are located at the same side of the underlay substrate.The photoelectric detection system can be used in heart rate detection.
Description
Technical field
This disclosure relates to microelectronics technology more particularly to a kind of photoelectric detection system and preparation method thereof, heart rate inspection
Survey device and electronic equipment.
Background technique
With the development of microelectric technique, the function of intelligent movable equipment is more and more diversified, especially in health field
Using more and more extensive.
By taking smartwatch as an example, other than the functions such as time showing, there can also be heart rate detection etc..Intelligent hand
Table generallyd use when detecting heart rate electric signal method measurement, vibratory drilling method measurement etc., measuring circuit it is complex and application limitation
Property is bigger.
Above- mentioned information disclosed in the background technology part are only used for reinforcing the understanding to the background of the disclosure, therefore it can
To include the information not constituted to the prior art known to persons of ordinary skill in the art.
Summary of the invention
Be designed to provide a kind of photoelectric detection system and preparation method thereof, heartbeat detection device and the electronics of the disclosure are set
It is standby, it can be used in heart rate detection.
According to the first aspect of the disclosure, a kind of photoelectric detection system is provided, comprising:
Underlay substrate；
First switch device, set on the side of the underlay substrate；
Photoelectric conversion device, set on the side of the underlay substrate, for converting optical signal into electric signal and being transferred to
The first switch device；
Second switch device, set on the side of the underlay substrate；
Luminescent device, set on the side of the underlay substrate, for shining under the control of the second switch device；
The luminescent device and the photoelectric conversion device are located at the same side of the underlay substrate.
In a kind of exemplary embodiment of the disclosure, the first switch device includes:
First grid insulating layer has first surface and second surface set on the side of the underlay substrate；
Oxide semiconductor layer, set on the first surface of the first grid insulating layer, the oxide semiconductor
Layer includes the first channel region and the first source contact area and the first drain contact region that connect respectively with the first channel region；
First grid layer, set on the second surface of the first grid insulating layer；
First source electrode, set on the surface of first source contact area far from the underlay substrate, and with the first grid
Pole layer insulation；
First drain electrode, set on the surface of first drain contact region far from the underlay substrate, and with the first grid
Pole layer and first source electrode insulation.
In a kind of exemplary embodiment of the disclosure, the material of oxide semiconductor layer is indium gallium zinc oxide.
In a kind of exemplary embodiment of the disclosure, the photoelectric detection system further include:
First protective layer, the surface set on the oxide semiconductor layer far from the first grid insulating layer, for protecting
Protect the oxide semiconductor layer.
In a kind of exemplary embodiment of the disclosure, the first switch device has input terminal, the photoelectric conversion
Device includes:
First electrode layer is opened set on the side of the first switch device far from the underlay substrate, and with described first
Close the input terminal connection of device；
Photodiode layer, the surface set on the first electrode layer far from the underlay substrate；
The second electrode lay using transparent material and is set to surface of the photodiode layer far from the underlay substrate.
In a kind of exemplary embodiment of the disclosure, the luminescent device is for issuing green light.
According to the second aspect of the disclosure, a kind of preparation method of photoelectric detection system is provided, comprising:
Underlay substrate is provided；
First switch device is formed in the side of the underlay substrate；
In the side of the underlay substrate shape at photoelectric conversion device, the photoelectric conversion device is for converting optical signal
For electric signal and it is transferred to the first switch device；
Second switch device is formed in the side of the underlay substrate；
Luminescent device is formed in the side of the underlay substrate, the luminescent device is used in the second switch device
Control is lower to shine；
Wherein, the luminescent device and the photoelectric conversion device are located at the same side of the underlay substrate.
In terms of according to the third of the disclosure, a kind of heartbeat detection device is provided, including above-mentioned photoelectric detection system.
According to the 4th of the disclosure the aspect, a kind of electronic equipment is provided, comprising:
Above-mentioned heartbeat detection device；
Processor, the electric signal for being generated according to the luminescent device determine heart rate.
In a kind of exemplary embodiment of the disclosure, the electronic equipment further include:
Display panel has underlay substrate；
The underlay substrate of the underlay substrate of the display panel and the photoelectric detection system is same flexible substrate substrate.
Photoelectric detection system that the disclosure provides and preparation method thereof, heartbeat detection device and electronic equipment, same
Photoelectric conversion device and luminescent device are integrated on underlay substrate, wherein luminescent device is for issuing detection light, photovoltaic converter
Part is used to that electric signal will to be converted by the detection light reflected with measurement object, realizes photoelectric detection function, generated electric signal energy
It is enough in the detection to heart rate.Since various components are integrated on same underlay substrate, which can have
There is very high integrated level, without being assembled by multiple and different components, reduces the costs such as assembling, assembly management.Not only such as
This, since various components are integrated on same underlay substrate, which can have lesser volume, reduce
Restriction of the bulk factor to the performance and application range of photoelectric detection system, convenient for photoelectric detection system performance promotion and answer
With the expansion of range.Moreover, the raising of photoelectric detection system integrated level, convenient for the reduction of its power consumption, so that it is more suitable for moving
Dynamic equipment.
Detailed description of the invention
Its example embodiment is described in detail by referring to accompanying drawing, the above and other feature and advantage of the disclosure will become
It is more obvious.
Fig. 1 is the structural schematic diagram of photoelectric detection system in one embodiment of the disclosure.
Fig. 2 is the structural schematic diagram that oxide semiconductor material layer is formed in one embodiment of the disclosure.
Fig. 3 is the structural schematic diagram that first grid insulating layer and first grid layer are formed in one embodiment of the disclosure.
Fig. 4 is the structural schematic diagram that the first via hole and the second via hole are formed in one embodiment of the disclosure.
Fig. 5 is the structural schematic diagram that the first metal layer is formed in one embodiment of the disclosure.
Fig. 6 is the structural schematic diagram that third via hole and the 4th via hole are formed in one embodiment of the disclosure.
Fig. 7 is the structural schematic diagram that second metal layer is formed in one embodiment of the disclosure.
Fig. 8 is the structural schematic diagram that photodiode layer is formed in one embodiment of the disclosure.
Fig. 9 is the structural schematic diagram that the first source electrode and the first drain electrode are formed in one embodiment of the disclosure.
Figure 10 is the structural schematic diagram that third protective layer is formed in one embodiment of the disclosure.
Figure 11 is structural schematic diagram when electronic equipment flattens in one embodiment of the disclosure.
Figure 12 is structural schematic diagram when electronic equipment is bent in one embodiment of the disclosure.
Figure 13 is the preparation method flow diagram of photoelectric detection system in one embodiment of the disclosure.
Main element description of symbols includes: in figure
1, photoelectric detection system；101, underlay substrate；102, buffer layer；103, the first light shield layer；104, the second light shield layer；
210, oxide semiconductor layer；211, the first channel region；212, the first source contact area；213, the first drain contact region；214,
Oxide semiconductor material layer；220, first grid insulating layer；230, first grid layer；240, the first source electrode；241, the first gold medal
Belong to the first part of layer；242, the source area of the first part of second metal layer；250, the first drain electrode；251, the first metal layer
Second part；252, the drain region of the first part of second metal layer；310, photodiode layer；410, active layer；411,
Two channel regions；412, the second source contact area；413, the second drain contact region；414, low-temperature polycrystalline silicon layer；420, second grid
Insulating layer；430, second grid layer；440, third gate insulating layer；450, third grid layer；460, the second source electrode；470, second
Drain electrode；510, third electrode layer；520, electroluminescence layer；601, the first interlayer dielectric layer；602, the first protective layer；603, second
Interlayer dielectric layer；604, the first via hole；605, the second via hole；606, third via hole；607, the 4th via hole；608, the second protection
Layer；609, third protective layer；610, planarization layer；611, pixel defining layer；612, common electrode layer；613, the 4th protective layer；
2, display panel.
Specific embodiment
Example embodiment is described more fully with reference to the drawings.However, example embodiment can be real in a variety of forms
It applies, and is not understood as limited to example set forth herein；On the contrary, these embodiments are provided so that the disclosure will more comprehensively and
Completely, and by the design of example embodiment comprehensively it is communicated to those skilled in the art.Described feature, structure or characteristic
It can be incorporated in any suitable manner in one or more embodiments.In the following description, many details are provided
Embodiment of the disclosure is fully understood to provide.
In the figure for clarity, may be exaggerated the thickness of region and layer.Identical appended drawing reference indicates identical in figure
Or similar structure, thus the detailed description that them will be omitted.
When certain structure is at other structures "upper", it is possible to refer to that certain structural integrity is formed in other structures, or refer to certain
Structure is " direct " to be arranged in other structures, or refers to that certain structure is arranged in other structures by the way that another structure is " indirect ".Term
"one", " one ", " described " to indicate there are one or more elements/component part/etc.；Term " comprising " and " having " is used
To indicate the open meaning being included and refer to that the element/component part/in addition to listing also may be present separately other than waiting
Outer element/component part/etc..Term " first " and " second " etc. are only used as label, are not the quantity limits to its object
System.
A kind of photoelectric detection system 1 is provided in disclosure embodiment, as shown in Figure 1, the photoelectric detection system 1 includes lining
Substrate 101, first switch device, photoelectric conversion device, second switch device and luminescent device, wherein
First switch device is set to the side of underlay substrate 101；Photoelectric conversion device is set to the side of underlay substrate 101,
For converting optical signal into electric signal and being transferred to first switch device；Second switch device is set to the one of underlay substrate 101
Side；Luminescent device is set to the side of underlay substrate 101, for shining under the control of second switch device；Luminescent device and light
Electrotransformation device is located at the same side of underlay substrate 101.
The photoelectric detection system 1 that the disclosure provides, is integrated with photoelectric conversion device and hair on same underlay substrate 101
Optical device, wherein luminescent device is used to be turned by the detection light reflected with measurement object for issuing detection light, photoelectric conversion device
Electric signal is turned to, realizes that photoelectric detection function, generated electric signal can be used in the detection to heart rate.Due to various components collection
At on same underlay substrate 101, therefore the photoelectric detection system 1 has very high integrated level, without by multiple and different groups
Part is assembled, and the costs such as assembling, assembly management are reduced.Moreover, since various components are integrated in same underlay substrate
On 101, therefore the photoelectric detection system 1 has lesser volume, reduce bulk factor to the performance of photoelectric detection system 1 and
The restriction of application range, convenient for the promotion of 1 performance of photoelectric detection system and the expansion of application range.Moreover, photoelectric detection system 1
The raising of integrated level, convenient for the reduction of its power consumption, so that it is more suitable for mobile device.
Each component of the photoelectric detection system 1 provided with reference to the accompanying drawing disclosure embodiment is described in detail:
Underlay substrate 101 can be flexible substrate substrate 101, or the non-flexible underlay substrate 101 such as glass.Substrate
The type of substrate 101 can be determined and select according to the need range to be applied and form of photoelectric detection system 1.
For example, in one embodiment, as shown in figure 11, which can be used for heart rate inspection
The electronic equipment of brake, such as Intelligent bracelet.In order to obtain the photoelectric detection system 1 simultaneously on same underlay substrate 101
With display panel 2, which can choose flexible substrate substrate 101.The underlay substrate 101 may include viewing area
Domain and detection zone form display panel 2 in display area, form photoelectric detection system 1 in detection zone, and Photoelectric Detection fills
Set 1 and display panel 2 be located at the same side of underlay substrate 101.In this way, photoelectric detection system 1 and display panel 2 can be made simultaneously
It is standby, the function substrate for being integrated on same underlay substrate 101 and having simultaneously display and heart rate detecting function is obtained, so that the electricity
The integrated level promotion of sub- equipment, lower power consumption, preparation cost reduce.Underlay substrate 101 uses flexible substrate substrate 101, so that
The function substrate can be bent, so that display area and detection zone are respectively facing opposite direction.In this way, in use, inspection
Heart rate detection can be realized towards the body surface of wearer by surveying region；Display area can allow wearer to see towards external
The information shown on to display area.
It may include first area and second area on the underlay substrate 101, wherein first area is used to form first and opens
Device and photoelectric conversion device are closed, is realized to by the detection of anti-detection light；Second area is used to form second switch device and hair
Optical device, for issuing detection light.
First switch device can be semiconductor switch device, and material and type can be according to photoelectric detection systems 1
Application field is selected, such as can choose bipolar transistor or field effect transistor etc., field effect transistor can be adopted
Use thin film transistor (TFT).It is understood that if photoelectric conversion device is formed by photoelectric current smaller, first switch device
The semiconductor devices that leakage current should be selected smaller, to reduce influence of the leakage current to testing result.
In one embodiment, first switch device can be oxide thin film transistor (Oxide-TFT).Compared to low
Warm polycrystalline SiTFT (LTPS-TFT), the leakage current of oxide thin film transistor is lower, is more suitable for photovoltaic converter
Part forms the situation of small photoelectric current.For example, when the photoelectric detection system 1 is used to detect the heart rate of people, photoelectric conversion
Device is formed by that photoelectric current is smaller, and low-temperature polysilicon film transistor is not used as since its leakage current compares larger
First switch device；And oxide thin film transistor may be used as first switch device since its leakage current is smaller, guarantee light
The detection accuracy of electric detection means 1.
As shown in Figure 1, oxide thin film transistor may include first grid insulating layer 220, oxide semiconductor layer
210, first grid layer 230, the first source electrode 240 and the first drain electrode 250.First grid insulating layer 220 is set to underlay substrate 101
Side, have first surface and second surface；Oxide semiconductor layer 210 is set to the first table of first grid insulating layer 220
Face, oxide semiconductor layer 210 include that the first channel region 211 and the first source electrode connecting respectively with the first channel region 211 connect
Touch area 212 and the first drain contact region 213；First grid layer 230 is set to the second surface of first grid insulating layer 220；First
Source electrode 240 is set to the first surface of the source contact area 212 far from underlay substrate 101, and insulate with first grid layer 230；First
Drain electrode 250 be set to the first surface of the drain contact region 213 far from underlay substrate 101, and with first grid layer 230 and the first source electrode
240 insulation.
Oxide thin film transistor can be top gate type, or bottom gate type.For top gate type sull crystal
Pipe, oxide semiconductor layer 210 are located at first grid insulating layer 220 close to the surface of underlay substrate 101, first grid layer 230
Surface positioned at first grid insulating layer 220 far from underlay substrate 101.For bottom gate type oxide thin film transistor (TFT), oxide
Semiconductor layer 210 is located at surface of the first grid insulating layer 220 far from underlay substrate 101, and first grid layer 230 is located at the first grid
Pole insulating layer 220 is close to the surface of underlay substrate 101.It is brilliant to top gate type oxide thin film transistor and bottom gate type oxide film
The specific structure of body pipe, the disclosure are not described in detail one by one herein.
It can determine that first switch device uses top-gated according to the preparation process of photoelectric detection system 1 or performance requirement etc.
Type oxide thin film transistor or bottom gate type oxide thin film transistor (TFT).For example, if second switch device is that low temperature is more
Polycrystal silicon film transistor, then first switch device can be top gate type oxide thin film transistor, so that the photoelectric detection system 1
With low temperature polycrystalline silicon+oxide structure (LTPO), realize first switch device and second switch device in preparation step, level
Integration and partial common in structure reduce the preparation cost of photoelectric detection system 1.
The material of oxide semiconductor layer 210 can according to need the suitable metal oxide materials of selection, such as zinc oxide
(ZnO), tin oxide (SnO2), indium gallium zinc oxide (IGZO), indium-zinc oxide (IZO) or other materials, the disclosure is to this
Special restriction is not done.
One of first drain electrode 250 of the oxide thin film transistor and the first source electrode 240 can be used as first and open
The input terminal of device is closed, another output end as first switch device.The input terminal of first switch device is used for and photoelectricity
Conversion devices connection, transmission photoelectric conversion device according to received extraneous light and the photoelectric current that generates.It is understood that
Photoelectric conversion device is connect with the input terminal of first switch device, is not meant to that electric current is inevitable and is flowed to the from photoelectric conversion device
The input terminal of one switching device.On first switch device and the detection circuit of the connected formation of photoelectric conversion device, Ke Yishe
It is equipped with bias voltage, and then forms bias current in the detection circuit.Photoelectric conversion device is formed by photoelectric current and this is inclined
It sets current phasor to be superimposed and then the electric current in the detection circuit is caused to change, the knots modification of the electric current can be used for reflecting photoelectricity
Stream.
In one embodiment, as shown in Figure 1, the photoelectric detection system 1 further includes the first protective layer 602, the first protection
Layer 602 is set to surface of the oxide semiconductor layer 210 far from first grid insulating layer 220, for protecting oxide semiconductor layer
210.The material of first protective layer 602 can be inorganic material, such as can choose silica etc..
Photoelectric conversion device may include a photodiode, and material, type of photodiode etc. can be according to light
The performance requirement of electrotransformation device is selected.
For example, photoelectric conversion device may include:
First electrode layer, the side set on first switch device far from underlay substrate 101, and it is defeated with first switch device
Enter end connection；
Photodiode layer 310, the surface set on first electrode layer far from underlay substrate 101；
The second electrode lay using transparent material and is set to surface of the photodiode layer 310 far from underlay substrate 101.
In this way, the detection light reflected can enter photodiode layer 310 by the second electrode lay, in photodiode
Photoelectric current is generated in layer 310, photoelectric current can be by including that the detection electric current of photoelectric conversion device and first switch device is detected
It surveys.
In one embodiment, first electrode layer can connect the oxide thin film transistor as first switch device
First source electrode 240 realizes the connection of oxide thin film transistor and photodiode layer 310.In another embodiment, first
Electrode layer can be same metal layer with the first source electrode 240, i.e., conductive knot prepare on by same metal layer, continual
Structure.It is understood that the same metal layer can be more metal layers, or single metal layer, the disclosure to this not
Do special restriction.
In one embodiment, photodiode layer 310 can be a PIN diode structure, may include:
First doping semiconductor layer, the side set on first electrode layer far from underlay substrate 101；
Intrinsic semiconductor layer, the side set on the first doping semiconductor layer far from underlay substrate 101；
Second doping semiconductor layer, the side set on intrinsic semiconductor layer far from underlay substrate 101；
Wherein, one of the first doping semiconductor layer and the second doping semiconductor layer can partly lead for the N-type of heavy doping
Body, another can be the P-type semiconductor of heavy doping.It is understood that intrinsic semiconductor layer both can partly be led using intrinsic
Body material, can also be using the intrinsic material being lightly doped.
Second switch device can be same or different with first switch device.In one embodiment, second switch device
Part can be low-temperature polysilicon film transistor.As shown in Figure 1, low-temperature polysilicon film transistor may include:
Second grid insulating layer 420 has first surface and second surface set on the side of underlay substrate 101；
Active layer 410, set on the first surface of second grid insulating layer 420, including the second channel region 411 and respectively with
The second source contact area 412 and the second drain contact region 413 of second channel region 411 connection；Wherein, the material of active layer 410
For polysilicon；
Second grid layer 430, set on the second surface of second grid insulating layer 420；
Second source electrode 460, set on the second surface of the source contact area 412 far from underlay substrate 101, and with and grid layer
Insulation；
Second drain electrode 470, set on the second surface of the drain contact region 413 far from underlay substrate 101, and with second grid layer
430 and second source electrode 460 insulate.
Low-temperature polycrystalline silicon transistor can be top gate type, or bottom gate type.For top gate type low-temperature polysilicon film
Transistor, active layer 410 are located at second grid insulating layer 420 close to the surface of underlay substrate 101, and second grid layer 430 is located at
Surface of the second grid insulating layer 420 far from underlay substrate 101.For bottom gate type low-temperature polysilicon film transistor, active layer
410 are located at surface of the second grid insulating layer 420 far from underlay substrate 101, and second grid layer 430 is located at second grid insulating layer
420 close to the surface of underlay substrate 101.It is brilliant to top gate type low-temperature polysilicon film transistor and bottom gate type low-temperature polysilicon film
The specific structure of body pipe, the disclosure are not described in detail one by one herein.
Second source electrode 460 or the second drain electrode 470 can be used as the output end of second switch device, be used for and electroluminescence layer
520 connections, to control control of the signal by the realization of second switch device to electroluminescence layer 520.
In one embodiment, second switch device can be top gate type low-temperature polysilicon film transistor, in order to make
Cooperate for the top gate type oxide thin film transistor of first switch device.
Of course, as needed, in one embodiment, low-temperature polycrystalline silicon transistor can also be two grid crystal
Pipe.
Luminescent device can be with electroluminescent device or photo luminescent devices etc..Electroluminescent device may include one luminous two
Pole pipe, such as Organic Light Emitting Diode or inorganic light-emitting diode, the disclosure do not do special restriction to this.
In one embodiment, electroluminescent device may include:
Third electrode layer 510, the side set on second switch device far from underlay substrate 101, and with second switch device
Output end connection；
Electroluminescence layer 520, the surface set on third electrode layer 510 far from underlay substrate 101；
4th electrode layer using transparent material and is set to surface of the electroluminescence layer 520 far from underlay substrate 101.
Wherein, there is electroluminescent material, electroluminescent material can be sent out when electric current passes through in electroluminescence layer 520
Light.In this way, electroluminescence layer 520 will issue detection light and be passed by the 4th electrode layer when electric current flows through electroluminescence layer 520
Output is gone.Electroluminescent material can be organic material or inorganic material, and the disclosure does not do special restriction to this.
In one embodiment, since the absorption to green light, electroluminescence layer 520 may be implemented in the hemoglobin in blood
Green light is issued when electric current passes through, in this way, the number of the green light of skin reflex can reflect the number of blood in skin；According to skin
The changing rule of the green light of skin reflection, can calculate the heart rate of people.Therefore, the sending when electric current passes through of electroluminescence layer 520
Green light makes the photoelectric detection system 1 be more suitable for heart rate detection.
In one embodiment, the second electrode lay and the 4th electrode layer can be arranged with same layer, i.e., using identical material and
Identical processing step preparation is completed.For example, the second electrode lay and the 4th electrode layer can be the public affairs of photoelectric detection system 1
Common electrode layer 612, the common electrode layer 612 are prepared using transparent conductive material, are photoelectric conversion device and electroluminescent
Device provides bias voltage.
It is understood that in the photoelectric detection system 1 that the disclosure provides, first switch device, photoelectric conversion device, the
The quantity of any one in two switching devices and electroluminescent device, all can be one or more.
In the embodiment that the disclosure provides, first switch device is oxide semiconductor film transistor, leakage
Electric current very little, therefore effective control to small photoelectric current may be implemented；Due to first switch device can be adapted for it is small
Photoelectric current, therefore the detection light that issues of luminescent device can be with very little, with can be efficiently converted by photoelectric conversion device can
Subject to the photoelectric current effectively controlled by first switch device.Therefore, the power consumption of luminescent device can be very small, so that photoelectricity
Detection device it is low in energy consumption.In the related art, when carrying out Photoelectric Detection by reflection method, due to needing stronger detection
Light, therefore realize that the power consumption of Photoelectric Detection (such as measurement heart rate) is relatively high using reflection method in the related technology, it is difficult to it is effectively suitable
For mobile device or cruise duration of mobile device is reduced, reduces the application experience of mobile device.The light of the disclosure
The luminescent device of electric detection means can realize detection by issuing faint light, therefore its is low in energy consumption, is highly suitable for
Mobile device.
The photoelectric detection system 1 of the disclosure, can be with other than it may include each device as described above and functional layer
It including other devices or functional layer, such as can also include buffer layer 102, planarization layer 610, encapsulated layer etc., the disclosure exists
This is not repeated one by one.
The disclosure additionally provides a kind of preparation method of photoelectric detection system 1, and it is real to be used to prepare above-mentioned photoelectric detection system 1
Apply any one photoelectric detection system 1 described in mode.As shown in figure 13, which includes:
Step S110 provides underlay substrate 101；
Step S120 forms first switch device in the side of underlay substrate 101；
Step S130, in the side of 101 shape of underlay substrate at photoelectric conversion device, photoelectric conversion device is used for optical signal
It is converted into electric signal and is transferred to first switch device；
Step S140 forms second switch device in the side of underlay substrate 101；
Step S150 forms luminescent device in the side of underlay substrate 101, and luminescent device is used in second switch device
Control is lower to shine；Wherein, luminescent device and photoelectric conversion device are located at the same side of underlay substrate 101.
According to this method, the integrated of photoelectric conversion device and luminescent device can be realized on same underlay substrate 101, is subtracted
The amount of parts and volume of photoelectric detection system 1 are lacked, convenient for the reduction of power consumption and the promotion of performance.
It should be noted that although describing each step of method in the disclosure in the accompanying drawings with particular order,
This does not require that or implies must execute these steps in this particular order, or have to carry out step shown in whole
Just it is able to achieve desired result.Additional or alternative, it is convenient to omit multiple steps are merged into a step and held by certain steps
Row, and/or a step is decomposed into execution of multiple steps etc., it is regarded as a part of this disclosure.
In the following, being explained further and illustrating this with one of specific structure and preparation method thereof of photoelectric detection system 1
Disclosed photoelectric detection system 1 and preparation method thereof.
As shown in Figure 1, the photoelectric detection system 1 may include following hierarchical structure:
Underlay substrate 101 has first area and second area；The material of underlay substrate 101 can be polyimides
(PI)；
Buffer layer 102, set on the surface of underlay substrate 101；
First light shield layer 103 is set in buffer layer 102 and is located at first area；
Second light shield layer 104 is set in buffer layer 102 and is located at second area；
Active layer 410, side set on buffer layer 102 far from underlay substrate 101 and is set to second area；Active layer 410
The second source contact area 412 being connect including the second channel region 411 and respectively with the second channel region 411 and the second drain contact
Area 413；413 mutually insulated of second source contact area 412 and the second drain contact region；The material of active layer 410 is low-temperature polysilicon
Silicon；
Second grid insulating layer 420, side and covering active layer 410 set on buffer layer 102 far from underlay substrate 101；
Second grid layer 430, side set on second grid insulating layer 420 far from underlay substrate 101 and is set to the secondth area
Domain；
First interlayer dielectric layer 601, side set on second grid insulating layer 420 far from underlay substrate 101 and covering the
Two grid layers 430；
First protective layer 602, set on the first side of the interlayer dielectric layer 601 far from underlay substrate 101；First protective layer
602 material is silica；
Oxide semiconductor layer 210 set on the first surface of the protective layer 602 far from underlay substrate 101 and is set to the firstth area
Domain, oxide semiconductor layer 210 include that the first channel region 211 and the first source electrode connecting respectively with the first channel region 211 connect
Touch area 212 and the first drain contact region 213；Wherein, oxide semiconductor IGZO；
First grid insulating layer 220, the surface set on oxide semiconductor layer 210 far from underlay substrate 101；
Third gate insulating layer 440 set on the first side of the protective layer 602 far from underlay substrate 101 and is located at the firstth area
Domain；Material can be identical as first grid insulating layer 220；
First grid layer 230, the surface set on first grid insulating layer 220 far from underlay substrate 101；
Third grid layer 450, the surface set on third gate insulating layer 440 far from underlay substrate 101；Material can be with
Three grid layers 450 are identical；
Second interlayer dielectric layer 603, set on the first side of the protective layer 602 far from underlay substrate 101 and covering oxide
Semiconductor layer 210, first grid layer 230 and third grid layer 450；
First via hole 604, in first area through the second interlayer dielectric layer 603 and the first source contact area 212 of exposure；
Second via hole 605, in first area through the second interlayer dielectric layer 603 and the first drain contact region 213 of exposure；
Third via hole 606 is situated between in second area through the second interlayer dielectric layer 603, the first protective layer 602, the first interlayer
Matter layer 601 and second grid insulating layer 420 and the second source contact area 412 of exposure；
4th via hole 607 is situated between in second area through the second interlayer dielectric layer 603, the first protective layer 602, the first interlayer
Matter layer 601 and second grid insulating layer 420 and the second drain contact region 413 of exposure；
First source electrode 240 is set to the second side of the interlayer dielectric layer 603 far from underlay substrate 101 in first area and leads to
It crosses the first via hole 604 and connects the first source contact area 212, including ground stacked on top of one another two metal layers；Wherein, the first source electrode 240
It can be used as the first electrode layer of photoelectric conversion device；
First drain electrode 250 is set to the second side of the interlayer dielectric layer 603 far from underlay substrate 101 in first area and leads to
It crosses the second via hole 605 and connects the first drain contact region 213, including ground stacked on top of one another two metal layers；
Second source electrode 460 is set to the second side of the interlayer dielectric layer 603 far from underlay substrate 101 in second area and leads to
It crosses third via hole 606 and connects the second source contact area 412；
Second drain electrode 470 is set to the second side of the interlayer dielectric layer 603 far from underlay substrate 101 in second area and leads to
It crosses the 4th via hole 607 and connects the second drain contact region 413；
Photodiode layer 310, set on the first surface of the source electrode 240 far from underlay substrate 101；Photodiode layer 310
For PIN diode；
Second protective layer 608, the surface set on photodiode layer 310 far from underlay substrate 101, using electrically conducting transparent material
Expect (such as ITO), to protect photodiode layer 310；
Third protective layer 609, set on the second side of the protective layer 608 far from underlay substrate 101 and covering first area and
Second area has the pattern for exposing the second protective layer of part 608；The material of third protective layer 609 can be silicon nitride, oxygen
SiClx or its mixture；Third protective layer 609 is the protective layer of oxide semiconductor thin-film transistor, while being also used to protect
The side of photodiode layer 310.
Planarization layer 610, side set on third protective layer 609 far from underlay substrate 101 and having expose part the
The pattern of two protective layers 608；
5th via hole is set to second area and runs through third protective layer 609 and planarization layer 610, and exposes the second leakage
Pole 470；
Third electrode layer 510, the side set on planarization layer 610 far from underlay substrate 101, and be set to second area and lead to
Cross the second drain electrode 470 of the 5th via hole connection；
Pixel defining layer 611, the side set on third electrode layer 510 far from underlay substrate 101, and have and expose at least
The pattern of part third electrode layer 510 and the second protective layer 608；
Electroluminescence layer 520, the surface set on third electrode layer 510 far from underlay substrate 101；When electric current passes through, electricity
Electroluminescent layer 520 can issue green light；
Common electrode layer 612, the side set on pixel defining layer 611 far from underlay substrate 101, and and electroluminescence layer
The 520 surfaces connections far from underlay substrate 101, connect, as the far from the surface of underlay substrate 101 with the second protective layer 608
Two electrode layers and the 4th electrode layer；The material of common electrode layer 612 is transparent conductive material；
4th protective layer 613, the side set on common electrode layer 612 far from underlay substrate 101 can be polyethylene
(TFE) materials such as.
Wherein, first switch device includes oxide semiconductor layer 210, first grid insulating layer 220, first grid layer
230, the first source electrode 240 and the first drain electrode 250；Photoelectric conversion device includes the first source electrode 240, photodiode layer 310, second
Protective layer 608 and common electrode layer 612；Second switch device includes active layer 410, second grid insulating layer 420, second grid
Layer 430, third gate insulating layer 440, third grid layer 450, the second source electrode 460 and the second drain electrode 470；Electroluminescent device packet
Include third electrode layer 510, electroluminescence layer 520 and common electrode layer 612.
Wherein, the first electrode layer of photoelectric conversion device is the first source electrode 240, and the first source electrode 240 is double layer of metal material,
Thickness with higher, convenient for reducing the difference in height between photoelectric conversion device photodiode layer 310 and pixel defining layer 611
(segment difference).
The photoelectric detection system 1 in the preparation, can carry out in accordance with the following steps:
Step S201, provides flexible substrate substrate 101, and underlay substrate 101 has first area and second area.
Step S202 forms the buffer layer with the first light shield layer 103 and the second light shield layer 104 on underlay substrate 101
102。
Step S203, buffer layer 102 form the pattern with low-temperature polycrystalline silicon layer 414 far from the side of underlay substrate 101；
The low-temperature polycrystalline silicon layer 414 is located at second area.
Step S204, being formed in low-temperature polycrystalline silicon layer 414 far from the side of underlay substrate 101 has second grid insulating layer
420 pattern.
Step S205, being formed in second grid insulating layer 420 far from the side of underlay substrate 101 has second grid layer
430 patterns.
Step S205 is doped the partial region of low-temperature polycrystalline silicon layer 414, so that low-temperature polycrystalline silicon layer 414 is formed
The second source contact area 412 being connect including the second channel region 411 and respectively with the second channel region 411 and the second drain contact
The pattern in area 413.
Step S206, being formed in second grid layer 430 far from the side of underlay substrate 101 has the first interlayer dielectric layer
601 pattern.
Step S207, being formed in the first interlayer dielectric layer 601 far from the side of underlay substrate 101 has the first protective layer
602 pattern.
Step S208, being formed in the first protective layer 602 far from the surface of underlay substrate 101 has oxide semiconductor material
The pattern of layer 214, as a result as shown in Figure 2.
Step S209, being formed in oxide semiconductor material layer 214 far from the side of underlay substrate 101 has first grid
The pattern of insulating layer 220 and third gate insulating layer 440.
Step S210, in the side of first grid insulating layer 220 and third gate insulating layer 440 far from underlay substrate 101
Form the pattern with first grid layer 230 and third grid layer 450.
It is understood that after gate insulating layer and grid layer being respectively formed in step S209 and step S210,
By an etching technics, so that it includes first grid insulating layer 220 and third gate insulating layer 440 that gate insulating layer, which is formed,
Pattern, so that grid layer forms the pattern including first grid layer 230 and third grid layer 450.As a result as shown in Figure 3.
Step S211 is doped the regional area of oxide semiconductor material layer 214, so that oxide semiconductor material
The bed of material 214 forms the pattern with oxide semiconductor layer 210.
Step S212, being formed in first grid layer 230 and third grid layer 450 far from the side of underlay substrate 101 has
The pattern of second interlayer dielectric layer 603.
Step S213 forms the pattern of the first via hole 604 and the second via hole 605 on the second interlayer dielectric layer 603.As a result
As shown in Figure 4.
Step S214, being formed in the second interlayer dielectric layer 603 far from the side of underlay substrate 101 has the first metal layer
Pattern；The first metal layer includes first part and second part, and the first part 241 of the first metal layer passes through the first via hole 604
Connect the first source contact area 212；The second part 251 of the first metal layer connects the first drain contact by the second via hole 605
Area 213.
The first metal layer can be used as the bottom metal layer of the first source electrode 240 and the first drain electrode 250.One side of the first metal layer
Face is used to increase the thickness of the first source electrode 240, reduces the segment difference (difference in height) between photoelectric conversion layer and pixel defining layer 611.
On the other hand, the first metal layer is pre-charged in the first via hole 604 and the second via hole 605, forms 606 He of third via hole in etching
When four via holes 607, it can protect oxide semiconductor layer 210 and be not etched.As a result as shown in Figure 5.
Step S215 forms the pattern of third via hole 606 and the 4th via hole 607.As a result as shown in Figure 6.
Step S216 forms the pattern with second metal layer far from the side of underlay substrate 101 in the first metal layer；The
Two metal layers include three parts, the first part's covering the first metal layer and covering oxide semiconductor layer 210 of second metal layer
Corresponding region；The second part of second metal layer connects the second source contact area 412 by third via hole 606；Second metal layer
Part III by the 4th via hole 607 connect the second drain contact region 413.In this way, the second part of second metal layer becomes
Second source electrode 460；The Part III of second metal layer becomes the second drain electrode 470.
The first part of second metal layer can cover the first channel region 211 of oxide semiconductor layer 210, steam passing through
When the techniques such as plating form photodiode, it can protect the first channel region 211 and be not destroyed.As a result as shown in Figure 7.
Step S217 forms the figure with photodiode layer 310 far from the side of underlay substrate 101 in second metal layer
Case.Since the first channel region 211 is protected by second metal layer, the process for forming photodiode layer 310 will not be to IGZO
Material has a negative impact.
Step S218, being formed in photodiode layer 310 far from the surface of underlay substrate 101 has the second protective layer 608
Pattern.
It is understood that first can deposit to form photodiode material layer, it is then remote in photodiode material layer
Surface from underlay substrate 101 forms the second protected material bed of material, is then schemed photodiode material layer by Patternized technique
Case turns to photodiode layer 310, is the second protective layer 608 by the second protection materials pattern layers.As a result as shown in Figure 8.
Step S219, the first part of second metal layer is patterned, that is, removes the of the top of the first channel region 211
Two metal layers, so that the first part of the second metal layer after patterning is divided into the source area of the first part of second metal layer
242 and second metal layer first part drain region 252, respectively with the first part of the first metal layer 241 and the first metal
The second part 251 of layer is correspondingly arranged, the top layer metallic layer as the first source electrode 240 and the first drain electrode 250.As a result such as Fig. 9 institute
Show.
Step S220, being formed in the second protective layer 608 far from the side of underlay substrate 101 has third protective layer 609
Pattern.The results are shown in Figure 10.
Step S221 forms the figure with planarization layer 610 far from the side of underlay substrate 101 in third protective layer 609
Case.
Step S222 forms the pattern of the 5th via hole；
Step S223 forms the figure with third electrode layer 510 far from the side of underlay substrate 101 in planarization layer 610
Case.
Step S224, being formed in third electrode layer 510 far from the side of underlay substrate 101 has pixel defining layer 611
Pattern.
Step S225 forms the pattern with electroluminescence layer 520 in pixel defining layer 611.
Step S226, being formed in electroluminescence layer 520 far from the side of underlay substrate 101 has common electrode layer 612
Pattern.
Step S227, being formed in common electrode layer 612 far from the side of underlay substrate 101 has the 4th protective layer 613
Pattern.As a result as shown in Figure 1.
The disclosure additionally provides a kind of heartbeat detection device comprising described by above-mentioned 1 embodiment of photoelectric detection system
Any one photoelectric detection system 1 and a processor.Processor can be transferred to first switch according to photoelectric conversion device
The electric signal of device, calculates heart rate.The photoelectric detection system 1 can be applied to smartwatch, Intelligent bracelet, have heart rate inspection
The smart machines such as clinical thermometer, the smart phone of brake or other portable equipments.
The photoelectric detection system 1 that the heartbeat detection device of disclosure embodiment uses and above-mentioned photoelectric detection system 1
Photoelectric detection system 1 in embodiment is identical, and therefore, beneficial effect having the same, details are not described herein.
The disclosure additionally provides a kind of electronic equipment comprising any described in above-mentioned heartbeat detection device embodiment
A kind of heartbeat detection device.The electronic equipment may include but the unlimited smartwatch with heart rate detecting function, Intelligent bracelet,
Clinical thermometer, smart phone, e-book, laptop etc..
The embodiment party of heartbeat detection device and above-mentioned heartbeat detection device that the electronic equipment of disclosure embodiment uses
Heartbeat detection device in formula is identical, and therefore, beneficial effect having the same, details are not described herein.
As is illustrated by figs. 11 and 12, which can have display panel 2, the display panel 2 can for LCD,
The display panel 2 of OLED or other display types.In one embodiment, which has underlay substrate, and display surface
The underlay substrate of plate 2 and the underlay substrate 101 of photoelectric detection system 1 are same flexible substrate substrate.In this way, the electronic equipment has
There is a function substrate, which is integrated with display function and heart rate detecting function, so that the integrated level of the electronic equipment is more
Height, the reduction of edge power consumption, the diminution of volume and performance promotion.
It should be appreciated that the disclosure is not limited in its application to the detailed construction and arrangement of the component of this specification proposition
Mode.The disclosure can have other embodiments, and can realize and execute in many ways.Aforesaid deformation form and
Modification is fallen within the scope of this disclosure.It should be appreciated that this disclosure and the disclosure of restriction extend in text
And/or it is mentioned in attached drawing or all alternative combinations of two or more apparent independent features.It is all these different
Combination constitutes multiple alternative aspects of the disclosure.Embodiment described in this specification illustrates to become known for realizing the disclosure
Best mode, and those skilled in the art will be enable using the disclosure.
Claims (10)
1. a kind of photoelectric detection system characterized by comprising
Underlay substrate；
First switch device, set on the side of the underlay substrate；
Photoelectric conversion device, set on the side of the underlay substrate, for converting optical signal into electric signal and being transferred to described
First switch device；
Second switch device, set on the side of the underlay substrate；
Luminescent device, set on the side of the underlay substrate, for shining under the control of the second switch device；
The luminescent device and the photoelectric conversion device are located at the same side of the underlay substrate.
2. photoelectric detection system according to claim 1, which is characterized in that the first switch device includes:
First grid insulating layer has first surface and second surface set on the side of the underlay substrate；
Oxide semiconductor layer, set on the first surface of the first grid insulating layer, the oxide semiconductor layer packet
The first source contact area and the first drain contact region for including the first channel region and being connect respectively with the first channel region；
First grid layer, set on the second surface of the first grid insulating layer；
First source electrode, set on the surface of first source contact area far from the underlay substrate, and with the first grid layer
Insulation；
First drain electrode, set on the surface of first drain contact region far from the underlay substrate, and with the first grid layer
It insulate with first source electrode.
3. photoelectric detection system according to claim 2, which is characterized in that the material of oxide semiconductor layer is indium gallium zinc
Oxide.
4. photoelectric detection system according to claim 2, which is characterized in that the photoelectric detection system further include:
First protective layer, the surface set on the oxide semiconductor layer far from the first grid insulating layer, for protecting
State oxide semiconductor layer.
5. photoelectric detection system according to claim 1, which is characterized in that the first switch device has input terminal,
The photoelectric conversion device includes:
First electrode layer, set on the side of the first switch device far from the underlay substrate, and with the first switch device
The input terminal of part connects；
Photodiode layer, the surface set on the first electrode layer far from the underlay substrate；
The second electrode lay using transparent material and is set to surface of the photodiode layer far from the underlay substrate.
6. photoelectric detection system according to claim 1, which is characterized in that the luminescent device is for issuing green light.
7. a kind of preparation method of photoelectric detection system characterized by comprising
Underlay substrate is provided；
First switch device is formed in the side of the underlay substrate；
In the side of the underlay substrate shape at photoelectric conversion device, the photoelectric conversion device is for converting optical signal into electricity
Signal is simultaneously transferred to the first switch device；
Second switch device is formed in the side of the underlay substrate；
Luminescent device is formed in the side of the underlay substrate, the luminescent device is used for the control in the second switch device
It is lower to shine；
Wherein, the luminescent device and the photoelectric conversion device are located at the same side of the underlay substrate.
8. a kind of heartbeat detection device characterized by comprising
The described in any item photoelectric detection systems of claim 1~6；
Processor, the electric signal for being generated according to the luminescent device determine heart rate.
9. a kind of electronic equipment, which is characterized in that including heartbeat detection device according to any one of claims 8.
10. electronic equipment according to claim 9, which is characterized in that the electronic equipment further include:
Display panel has underlay substrate；
The underlay substrate of the underlay substrate of the display panel and the photoelectric detection system is same flexible substrate substrate.
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| CN108493212A (en) * | 2018-03-13 | 2018-09-04 | 武汉华星光电半导体显示技术有限公司 | Flexible Displays structure and electronic equipment |
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| CN110783326B (en) * | 2019-10-31 | 2021-12-17 | 京东方科技集团股份有限公司 | Substrate, preparation method thereof, display panel and display device |
| CN112947792A (en) * | 2021-03-30 | 2021-06-11 | 维沃移动通信有限公司 | Display module, electronic equipment, control method and control device of electronic equipment |
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