CN110783286A - 功率半导体用控制模块 - Google Patents
功率半导体用控制模块 Download PDFInfo
- Publication number
- CN110783286A CN110783286A CN201911071097.4A CN201911071097A CN110783286A CN 110783286 A CN110783286 A CN 110783286A CN 201911071097 A CN201911071097 A CN 201911071097A CN 110783286 A CN110783286 A CN 110783286A
- Authority
- CN
- China
- Prior art keywords
- fixedly connected
- control module
- power semiconductor
- side wall
- working box
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 27
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 13
- 239000000741 silica gel Substances 0.000 claims abstract description 11
- 229910002027 silica gel Inorganic materials 0.000 claims abstract description 11
- 230000000087 stabilizing effect Effects 0.000 claims description 7
- 239000000463 material Substances 0.000 claims description 5
- 238000009423 ventilation Methods 0.000 claims description 4
- 239000000377 silicon dioxide Substances 0.000 claims 1
- 230000017525 heat dissipation Effects 0.000 abstract description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract description 7
- 229910052782 aluminium Inorganic materials 0.000 abstract description 7
- 238000006243 chemical reaction Methods 0.000 abstract description 7
- 230000013011 mating Effects 0.000 abstract description 7
- 230000009471 action Effects 0.000 abstract description 6
- 241000883990 Flabellum Species 0.000 abstract description 2
- 230000000694 effects Effects 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/40—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
- H01L23/3675—Cooling facilitated by shape of device characterised by the shape of the housing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/42—Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
- H01L23/427—Cooling by change of state, e.g. use of heat pipes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/46—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids
- H01L23/467—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids by flowing gases, e.g. air
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Cooling Or The Like Of Electrical Apparatus (AREA)
Abstract
Description
Claims (7)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201911071097.4A CN110783286B (zh) | 2019-11-05 | 2019-11-05 | 功率半导体用控制模块 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201911071097.4A CN110783286B (zh) | 2019-11-05 | 2019-11-05 | 功率半导体用控制模块 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN110783286A true CN110783286A (zh) | 2020-02-11 |
CN110783286B CN110783286B (zh) | 2023-04-07 |
Family
ID=69389029
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201911071097.4A Active CN110783286B (zh) | 2019-11-05 | 2019-11-05 | 功率半导体用控制模块 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN110783286B (zh) |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20010038143A1 (en) * | 1997-06-12 | 2001-11-08 | Yukio Sonobe | Power semiconductor module |
JP2011129797A (ja) * | 2009-12-21 | 2011-06-30 | Hitachi Automotive Systems Ltd | 制御装置 |
JP2013033874A (ja) * | 2011-08-03 | 2013-02-14 | Mitsubishi Electric Corp | パワーモジュール |
CN103023279A (zh) * | 2011-09-27 | 2013-04-03 | 株式会社京浜 | 半导体控制装置 |
JP2019161146A (ja) * | 2018-03-16 | 2019-09-19 | 三菱電機株式会社 | 電力用半導体装置及びその製造方法 |
-
2019
- 2019-11-05 CN CN201911071097.4A patent/CN110783286B/zh active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20010038143A1 (en) * | 1997-06-12 | 2001-11-08 | Yukio Sonobe | Power semiconductor module |
JP2011129797A (ja) * | 2009-12-21 | 2011-06-30 | Hitachi Automotive Systems Ltd | 制御装置 |
JP2013033874A (ja) * | 2011-08-03 | 2013-02-14 | Mitsubishi Electric Corp | パワーモジュール |
CN103023279A (zh) * | 2011-09-27 | 2013-04-03 | 株式会社京浜 | 半导体控制装置 |
JP2019161146A (ja) * | 2018-03-16 | 2019-09-19 | 三菱電機株式会社 | 電力用半導体装置及びその製造方法 |
Also Published As
Publication number | Publication date |
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CN110783286B (zh) | 2023-04-07 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant | ||
CP03 | Change of name, title or address |
Address after: 221600 Science and Technology Park A5, Peixian Economic Development Zone, Xuzhou City, Jiangsu Province Patentee after: Hans semiconductor (Jiangsu) Co.,Ltd. Country or region after: China Address before: 221600 Science and Technology Park A5, Peixian Economic Development Zone, Xuzhou City, Jiangsu Province Patentee before: Hans Automation Technology (Jiangsu) Co.,Ltd. Country or region before: China |
|
TR01 | Transfer of patent right |
Effective date of registration: 20240521 Address after: Room 208C, Building A5, Science and Technology Industrial Park, North of Pei Road and East of Hanrun Road, Peixian Economic Development Zone, Xuzhou City, Jiangsu Province, 221000 Patentee after: Hanyu Microsensors (Jiangsu) Co.,Ltd. Country or region after: China Address before: 221600 Science and Technology Park A5, Peixian Economic Development Zone, Xuzhou City, Jiangsu Province Patentee before: Hans semiconductor (Jiangsu) Co.,Ltd. Country or region before: China |