CN110768642B - Broadband negative group delay microwave circuit with flat group delay characteristic - Google Patents

Broadband negative group delay microwave circuit with flat group delay characteristic Download PDF

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CN110768642B
CN110768642B CN201911086682.1A CN201911086682A CN110768642B CN 110768642 B CN110768642 B CN 110768642B CN 201911086682 A CN201911086682 A CN 201911086682A CN 110768642 B CN110768642 B CN 110768642B
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transmission line
group delay
line
microstrip line
input
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CN110768642A (en
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王钟葆
孟雨薇
邵特
房少军
刘宏梅
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Dalian Maritime University
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
    • H03H7/30—Time-delay networks
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
    • Y02D30/00—Reducing energy consumption in communication networks
    • Y02D30/70—Reducing energy consumption in communication networks in wireless communication networks

Abstract

The invention discloses a broadband negative group delay microwave circuit with flat group delay characteristics, which comprises: the device comprises a parallel unit, a microstrip line, a matching resistor, an input port and an output port; the parallel unit comprises an absorption resistor, a first transmission line, a second transmission line, a third transmission line and a fourth transmission line; the microstrip line comprises an input microstrip line and an output microstrip line which are positioned at two sides of the parallel unit; the input port is connected with the output port through a matching resistor to form an upper branch; the input port is connected with the input microstrip line and the parallel unit in parallel, then connected with the output microstrip line, and finally connected with the output port to form a lower branch. The parallel unit is formed by connecting the absorption resistor with the second transmission line in series through the first transmission line and then with a structure formed by connecting the absorption resistor with the third transmission line and the fourth transmission line in parallel.

Description

Broadband negative group delay microwave circuit with flat group delay characteristic
Technical Field
The invention relates to a microwave circuit, in particular to a broadband negative group delay microwave circuit with flat group delay characteristics.
Background
Group velocity is the velocity of the signal envelope and can be negative if the refractive index of the medium through which the signal passes and its derivative with respect to frequency are negative. In other words, the negative group delay phenomenon may occur in the absorption line or in the medium where signal attenuation exists. Therefore, in order to realize the negative group delay characteristic, many scholars use RLC resonant circuits and are applied to many fields. For example, RLC resonant circuits having a negative group delay characteristic are used in amplifiers, achieving shortening of delay lines, improvement of efficiency, equalization of ripple delays, and the like. In addition, RLC resonant circuits with negative group delay characteristics are also applied to the fields of phase shifters, antenna arrays, etc. to improve delay performance and increase bandwidth.
The frequency dependence of lumped elements limits the application of negative group delay circuits and thus creates many negative group delay circuits based on distributed parameters in combination with resistors, but such circuits decay more. Therefore, an active negative group delay circuit based on an amplifier has been developed, but the design is not facilitated due to the complex circuit parameters. A number of low loss passive negative group delay circuits are then created. However, these circuit groups have uneven delay values, which cannot meet the requirements of practical applications. In order to obtain a flat negative group delay characteristic, a learner proposed to cascade two negative group delay circuits operating at different frequencies together, but the bandwidth realized by this way is narrower and the attenuation is very large.
Disclosure of Invention
According to the problems of the prior art, the invention discloses a broadband negative group delay microwave circuit with flat group delay characteristics, which comprises: the device comprises a parallel unit, a microstrip line, a matching resistor, an input port and an output port; the parallel unit comprises an absorption resistor, a first transmission line, a second transmission line, a third transmission line and a fourth transmission line; the microstrip line comprises an input microstrip line and an output microstrip line which are positioned at two sides of the parallel unit;
the resistance value of the absorption resistor is r 1 The characteristic impedance of the first transmission line is Z 1 The characteristic impedance of the second transmission line is Z 2 The characteristic impedance of the third transmission line is Z 3 The characteristic impedance of the fourth transmission line is Z 4 The characteristic impedance of the input microstrip line and the output microstrip line is Z 5 The resistance value of the matching resistor is r 2 ；
The input port is connected with the output port through a matching resistor to form an upper branch;
the input port is connected with the input microstrip line and the parallel unit in parallel, then connected with the output microstrip line, and finally connected with the output port to form a lower branch.
Further, the broadband negative group delay microwave circuit with flat group delay characteristics is characterized in that:
the parallel unit is formed by connecting the absorption resistor with the second transmission line in series through the first transmission line and then with a structure formed by connecting the absorption resistor with the third transmission line and the fourth transmission line in parallel.
As a preferred mode: the realization condition of the broadband flat negative group delay of the circuit is that the lengths of the first transmission line, the second transmission line, the third transmission line, the fourth transmission line, the input microstrip line and the output microstrip line are all one quarter of the wavelength corresponding to the center frequency.
As a preferred mode: by changing the characteristic impedance of the first transmission line, the second transmission line, the third transmission line, the fourth transmission line, the input microstrip line, and the output microstrip line, the flatness of the group delay and the bandwidth of the negative group delay can be adjusted.
Further, the method comprises the steps of,
the transmission coefficient of the circuit is:
Figure BDA0002265621440000021
the group delay is as follows:
Figure BDA0002265621440000022
further, the internal parameters are as follows:
X 1 ＝(a 3 -a 1 )Z 0 (3)
X 2 ＝(a 1 +Z 0 )(a 3 +Z 0 )-a 2 a 4 (4)
X 3 ＝(a 4 -a 2 )Z 0 (5)
X 4 ＝a 2 (a 3 +Z 0 )+a 4 (a 1 +Z 0 ) (6)
X 1 ′＝(a 3 ′-a 1 ′)Z 0 (7)
X 2 ′＝a 3 ′(a 1 +Z 0 )+a 1 ′(a 3 +Z 0 )-a 2 ′a 4 -a 2 a 4 ′ (8)
X 3 ′＝(a 4 ′-a 2 ′)Z 0 (9)
X 4 ′＝a 2 ′(a 3 +Z 0 )+a 4 ′(a 1 +Z 0 )-a 1 ′a 4 -a 2 a 3 ′ (10)
further, the internal parameters are as follows:
Figure BDA0002265621440000031
Figure BDA0002265621440000032
Figure BDA0002265621440000033
Figure BDA0002265621440000034
Figure BDA0002265621440000035
/>
Figure BDA0002265621440000036
Figure BDA0002265621440000041
Figure BDA0002265621440000042
Figure BDA0002265621440000043
Figure BDA0002265621440000044
Figure BDA0002265621440000045
Figure BDA0002265621440000046
further, the internal parameters are as follows:
Figure BDA0002265621440000047
P′＝P 1 ′-P 2 ′ (20)
further, the internal parameters are as follows:
Figure BDA0002265621440000051
Figure BDA0002265621440000052
Figure BDA0002265621440000053
/>
Figure BDA0002265621440000054
compared with the prior art, the invention has the beneficial effects that:
in order to solve the problems of overlarge insertion loss, poor matching performance of an input port and an output port, large fluctuation of group delay values in a negative group delay bandwidth, insufficient bandwidth of a flat group delay and the like while realizing the broadband negative group delay microwave circuit, the invention provides the broadband negative group delay microwave circuit with the flat group delay characteristic.
Drawings
FIG. 1 is a schematic diagram of a broadband negative group delay microwave circuit with flat group delay characteristics according to the present invention;
FIG. 2 is a group delay diagram of a broadband negative group delay microwave circuit with flat group delay characteristics according to the present invention;
FIG. 3 is a graph of S-parameters of a broadband negative group delay microwave circuit with flat group delay characteristics according to the present invention;
in the figure: 1. the parallel unit comprises a parallel unit body 11, an absorption resistor 12, a first transmission line 13, a second transmission line 14, a third transmission line 15, a fourth transmission line 2, a microstrip line 21, an input microstrip line 22, an output microstrip line 3, a matching resistor 4, an input port 5 and an output port.
Detailed Description
In order to make the technical scheme and advantages of the present invention more clear, the technical scheme in the embodiment of the present invention is clearly and completely described below with reference to the accompanying drawings in the embodiment of the present invention:
a wideband negative group delay microwave circuit with flat group delay characteristics as shown in fig. 1, comprising: the parallel unit 1, the microstrip line 2, the matching resistor 3, the input port 4 and the output port 5; wherein the parallel unit 1 comprises an absorption resistor 11, a first transmission line 12, a second transmission line 13, a third transmission line 14 and a fourth transmission line 15; the microstrip line 2 comprises an input microstrip line 21 and an output microstrip line 22 which are positioned at two sides of the parallel unit 1;
the resistance value of the absorption resistor 11 is r 1 The first transmissionThe characteristic impedance of the transmission line 12 is Z 1 The characteristic impedance of the second transmission line 13 is Z 2 The characteristic impedance of the third transmission line 14 is Z 3 The characteristic impedance of the fourth transmission line 15 is Z 4 The characteristic impedance of the input microstrip line 21 and the output microstrip line 22 is Z 5 The resistance value of the matching resistor 3 is r 2 ；
The input port 4 is connected with the output port 5 through the matching resistor 3 to form an upper branch circuit;
the input port 4 is connected to the input microstrip line 21, and is connected to the output microstrip line 22 after being connected in parallel with the parallel unit 1, and is finally connected to the output port 5 to form a lower branch.
The parallel unit 1 is formed by connecting the absorption resistor 11 in series with the second transmission line 13 via the first transmission line 12, and then connecting the absorption resistor in parallel with the third transmission line 14 and the fourth transmission line 15.
Further, the implementation conditions of the broadband flat negative group delay are as follows: the lengths of the first transmission line 12, the second transmission line 13, the third transmission line 14, the fourth transmission line 15, the input microstrip line 21 and the output microstrip line 22 are all a quarter of the wavelength corresponding to the center frequency.
By changing the characteristic impedances of the first transmission line 12, the second transmission line 13, the third transmission line 14, the fourth transmission line 15, the input microstrip line 21, and the output microstrip line 22, the flatness of the group delay and the bandwidth of the negative group delay can be adjusted.
Further, the transmission coefficient of the circuit is:
Figure BDA0002265621440000071
the group delay is as follows:
Figure BDA0002265621440000072
further, the internal parameters are as follows:
X 1 ＝(a 3 -a 1 )Z 0 (3)
X 2 ＝(a 1 +Z 0 )(a 3 +Z 0 )-a 2 a 4 (4)
X 3 ＝(a 4 -a 2 )Z 0 (5)
X 4 ＝a 2 (a 3 +Z 0 )+a 4 (a 1 +Z 0 ) (6)
X 1 ′＝(a 3 ′-a 1 ′)Z 0 (7)
X 2 ′＝a 3 ′(a 1 +Z 0 )+a 1 ′(a 3 +Z 0 )-a 2 ′a 4 -a 2 a 4 ′ (8)
X 3 ′＝(a 4 ′-a 2 ′)Z 0 (9)
X 4 ′＝a 2 ′(a 3 +Z 0 )+a 4 ′(a 1 +Z 0 )-a 1 ′a 4 -a 2 a 3 ′ (10)
further, the internal parameters are as follows:
Figure BDA0002265621440000081
Figure BDA0002265621440000082
Figure BDA0002265621440000083
Figure BDA0002265621440000084
Figure BDA0002265621440000085
/>
Figure BDA0002265621440000086
Figure BDA0002265621440000087
Figure BDA0002265621440000088
Figure BDA0002265621440000089
Figure BDA0002265621440000091
Figure BDA0002265621440000092
Figure BDA0002265621440000093
further, the internal parameters are as follows:
Figure BDA0002265621440000094
P′＝P 1 ′-P 2 ′ (20)
further, the internal parameters are as follows:
Figure BDA0002265621440000101
Figure BDA0002265621440000102
Figure BDA0002265621440000103
/>
Figure BDA0002265621440000104
in order to further describe the broadband negative group delay microwave circuit with the flat group delay characteristic provided by the invention, the following specific examples are implemented on the premise of the technical scheme of the invention, but the protection scope of the invention is not limited to the following examples, and the methods used in the following examples are conventional methods unless otherwise specified.
Specific examples: this example illustrates a wideband negative group delay microwave circuit having a flat group delay characteristic when its center operating frequency is 1.0 GHz. As shown in fig. 2, the group delay value of the broadband negative group delay microwave circuit with flat group delay characteristic at the central frequency of 1.0GHz is-0.5 ns, and the group delay is negative in the frequency range of 0.675 GHz-1.351 GHz; the fluctuation of group delay is +/-5% in the frequency range of 0.776 GHz-1.281 GHz, and the broadband flat negative group delay characteristic is realized. As shown in FIG. 3, experiments prove that at the frequency of 1.0GHz, the signal attenuation of the broadband negative group delay microwave circuit with the flat group delay characteristic is 18.8dB, the return loss of an input/output port reaches 31.8dB, the return loss of the input/output port is larger than 20dB in the flat group delay frequency range of 0.776 GHz-1.281 GHz, and the return loss of the input/output port is larger than 15dB in the frequency range of 0.675 GHz-1.351 GHz with the negative group delay, which indicates that the input/output port obtains good matching performance in a wider frequency range.
In summary, the broadband negative group delay microwave circuit with the flat group delay characteristic realizes the broadband flat negative group delay characteristic, has small attenuation and delay fluctuation, well matches input and output ports, has the characteristics of simple design method and the like, and is very suitable for various radio frequency microwave systems.
The foregoing is only a preferred embodiment of the present invention, but the scope of the present invention is not limited thereto, and any person skilled in the art, who is within the scope of the present invention, should make equivalent substitutions or modifications according to the technical scheme of the present invention and the inventive concept thereof, and should be covered by the scope of the present invention.

Claims (2)

1. A broadband negative group delay microwave circuit having a flat group delay characteristic, comprising: the device comprises a parallel unit (1), a microstrip line (2), a matching resistor (3), an input port (4) and an output port (5); the parallel unit (1) comprises an absorption resistor (11), a first transmission line (12), a second transmission line (13), a third transmission line (14) and a fourth transmission line (15); the first transmission line (12) is connected in series with the absorption resistor (11) and then is connected in series with the second transmission line (13), and the third transmission line (14) and the fourth transmission line (15) are connected in parallel and then are connected in series with the second transmission line (13); the microstrip line (2) comprises an input microstrip line (21) and an output microstrip line (22) which are positioned at two sides of the parallel unit (1); the input port (4) is connected with the output port (5) through the matching resistor (3) to form an upper branch; the input port (4) is connected with the input microstrip line (21), connected with the output microstrip line (22) after being connected with the parallel unit (1) in parallel, and finally connected with the output port (5) to form a lower branch;
the implementation conditions of the broadband flat negative group delay are as follows: the lengths of the first transmission line (12), the second transmission line (13), the third transmission line (14), the fourth transmission line (15), the input microstrip line (21) and the output microstrip line (22) are all one quarter of the wavelength corresponding to the center frequency.
2. A wideband negative group delay microwave circuit with flat group delay characteristics as recited in claim 1, wherein: the flatness and negative group delay bandwidth of the circuit group delay are adjusted by changing the characteristic impedance of the first transmission line (12), the second transmission line (13), the third transmission line (14), the fourth transmission line (15), the input microstrip line (21) and the output microstrip line (22).
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CN112202419B (en) * 2020-09-30 2023-12-08 大连海事大学 Three-frequency negative group delay microwave circuit
CN113328717B (en) * 2021-05-07 2023-10-20 大连海事大学 Double-frequency low-insertion-loss negative group delay microwave circuit based on three-conductor asymmetric coupling line

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6111465A (en) * 1996-10-09 2000-08-29 Nec Corporation Amplifying unit comprising an input transformer capable of contributing to a wider frequency band of a broadband amplifier
CN107070429A (en) * 2017-04-12 2017-08-18 上海交通大学 With the electric adjustable negative group delay circuitry for stablizing insertion loss
CN110266284A (en) * 2019-06-27 2019-09-20 大连海事大学 The negative group delay microwave circuit of double frequency with low signal attenuation and optional frequency ratio
CN110348111A (en) * 2019-07-08 2019-10-18 南京信息工程大学 A kind of negative group delay circuitry and its design method based on coupling line and annular microstrip line

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6111465A (en) * 1996-10-09 2000-08-29 Nec Corporation Amplifying unit comprising an input transformer capable of contributing to a wider frequency band of a broadband amplifier
CN107070429A (en) * 2017-04-12 2017-08-18 上海交通大学 With the electric adjustable negative group delay circuitry for stablizing insertion loss
CN110266284A (en) * 2019-06-27 2019-09-20 大连海事大学 The negative group delay microwave circuit of double frequency with low signal attenuation and optional frequency ratio
CN110348111A (en) * 2019-07-08 2019-10-18 南京信息工程大学 A kind of negative group delay circuitry and its design method based on coupling line and annular microstrip line

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