CN113193316A - Non-reflection band-pass filter based on double-sided parallel strip lines - Google Patents
Non-reflection band-pass filter based on double-sided parallel strip lines Download PDFInfo
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Abstract
The invention relates to a double-sided parallel strip line-based non-reflection band-pass filter, which comprises a substrate, an upper layer metal strip and a lower layer metal strip which are respectively arranged on the upper bottom surface and the lower bottom surface of the substrate, are parallel and are mutually in metal. The upper and lower metal band strips respectively comprise a T-shaped band-pass filter and two absorption band-stop filters which are symmetrically arranged. And an offset with the distance d is formed between the quarter-wavelength open-circuit branches of the absorption type band elimination filters of the upper and lower metal strip layers. The high characteristic impedance value exceeding 300 omega is easily obtained by offsetting the parallel strip lines (quarter-wavelength open-circuit branches) of the upper layer and the lower layer, so that the proposed filter breaks through the process limitation, can realize the high impedance value, and has narrower 1dB relative bandwidth, wide 20dB relative absorption bandwidth and good passband selectivity. The band-pass filter part of the T-shaped structure introduces a half-wavelength open-circuit branch to generate two transmission zeros, so that the selectivity is obviously enhanced.
Description
Technical Field
The invention relates to the technical field of wireless communication, in particular to a double-sided parallel strip line-based non-reflection band-pass filter.
Background
Filters are an essential component of radio frequency and microwave systems to mitigate out-of-system interfering signals and unwanted spectrum generation. The band-pass filter is a key frequency-selecting element and plays a crucial role in a microwave/radio frequency system. Conventional filters reflect energy of out-of-band signals back to the signal source, and this reflection typically degrades the performance of active devices adjacent to it, thereby causing unavoidable interference. Thus, an additional element such as an attenuator is generally used to improve the performance, but this also causes problems such as a reduction in dynamic range and an increase in circuit size. With the continuous development of 5G communication, the requirements for the radio frequency circuit are also higher, and the quality of the filter performance directly determines the quality of the radio frequency circuit. Unlike conventional filters, reflectionless filters are able to completely dissipate some of the stopband energy, rather than reflecting it back to the source, thereby avoiding the effects of power reflections from the signal. The protection circuit can better protect other parts in the circuit, particularly active devices such as amplifiers and power tubes in a high-power system, and gives very low interference to other devices in the system, thereby improving the stability of the system. With the rapid development of the integrated passive device technology and the maturity of the process conditions, the research and design of the reflectionless filter are promoted. On the basis, various non-reflection and non-reflection band-pass filters based on different design methods are designed.
The reflectionless filter design mainly includes lumped element design and distributed element design. The lumped element design requires the use of a large number of elements, which results in a complicated design process and also deteriorates its operation performance at high frequencies due to parasitic effects of lumped inductance and capacitance. In conventional designs, a transmission line with high characteristic impedance is generally required to improve impedance matching performance. Meanwhile, the high characteristic impedance determines the width of the pass band, and the narrower the pass band width is, the higher the required impedance is. However, it is difficult for the microstrip line to achieve such a high impedance due to the limitation of its manufacturing conditions. Therefore, a thick substrate must be selected for the design. However, at the same time, the microstrip line width with low characteristic impedance becomes wider, and the occurrence of the laterally higher mode limits its operation at high frequencies. In previous designs, high equivalent impedance was typically achieved with coupled microstrip, but it inevitably resulted in high insertion loss.
With the development of wireless communication, the application of the double-sided parallel strip line has also gained wide attention and development accordingly. The double-sided parallel strip line (DSPSL) has the characteristics that transmitted radio frequency signals have equal amplitude and opposite phase and are not influenced by frequency, so that a balanced and differential circuit structure is easy to realize. The DSPSL can also easily realize the characteristics of high and low impedance to meet the circuit matching requirement and the like.
Thanks to the special properties of the parallel strip lines, the limitation of achieving high impedance can be broken by offsetting the upper and lower metal strips of the parallel strip lines in order to easily achieve high characteristic impedance without limiting the design frequency band range. A high characteristic impedance of up to 304 omega is achieved, which results in the proposed reflectionless filter having an improved selectivity and good reflectionless performance.
Disclosure of Invention
The present invention is directed to solve the above-mentioned drawbacks of the prior art, and provides a double-sided parallel strip line based non-reflective bandpass filter, which can easily realize a high characteristic impedance value by offsetting the upper and lower metal strips of the parallel strip lines, and has the advantages of a small circuit size and a low design cost.
In order to achieve the purpose of the invention, the invention provides a double-sided parallel strip line based non-reflection band-pass filter, which consists of an upper layer of parallel metal strip and a lower layer of parallel metal strip and a layer of substrate. The metal band strip with the upper layer and the lower layer in parallel can be divided into two parts, wherein one part is a T-shaped band-pass filter part, and the other part is two absorption type band-stop filter parts which are symmetrically distributed.
The absorption band-stop filter of the upper metal strip band consists of a quarter-wave transmission line (Z)2) Quarter wave long and short road branch (Z)3) Quarter wave open circuit branch (Z)4) And a terminating absorbing load resistance (R ═ Z)050 Ω). The absorption band-stop filter of the lower metal strip consists of a quarter-wave transmission line (Z)2) Quarter-wave short circuit branch (Z)3) And a quarter-wave open stub (Z)4) And (4) forming.
For the absorption band elimination filter part, under the condition of changing characteristic impedance of each branch, the input impedance and the frequency response of the absorption band elimination filter are analyzed to reduceCharacteristic impedance Z of quarter-wave transmission line2Or increasing the characteristic impedance Z of the quarter-wave short-circuit branch3In the case of (3), enhanced selectivity can be obtained, however, deterioration of filter matching performance is caused by absorbing fluctuations in input impedance of the band-stop filter section. However, with a quarter open stub characteristic impedance Z4The selectivity of the filter is obviously enhanced, the bandwidth is narrowed, and meanwhile, the influence on the non-reflection performance is not large. Therefore, the out-of-band roll-off rate can be flexibly adjusted by changing the characteristic impedance value of the quarter-wavelength open stub.
The T-shaped bandpass filter is composed of a half-wavelength transmission line (Z)1) And a center-loaded one-half wavelength (half-wavelength) open-circuit stub (Z)s) Composition that can generate two transmission zeros for better out-of-band rejection. The whole circuit can be regarded as a pi-shaped network, and the transmission coefficient (S) can be obtained through the ABCD matrix21) And reflection coefficient (S)11) So that it can be accurately calculated to obtain the expression of (c) in0/2 and 3f0At/2 two transmission zeros can be generated, at f0One transmission pole is generated and there are four other | S11A point where | is 0. And is well verified by analysis of the frequency response. Analyzing the frequency response, the following conclusions can be obtained: 1. increasing the characteristic impedance value Z of a half-wavelength transmission line1The roll-off rate out of band can be improved but the impedance matching becomes poor. 2. To balance the selectivity and impedance matching performance of the filter, a reasonable characteristic impedance value Z of a half-wavelength (half-wavelength) open-circuit branch is selectedsAnd the analysis is about 80 omega.
In combination with all the analyses, it can be concluded that the filter has a reflection-free performance and a selectivity of the pass band: increase the characteristic impedance value Z of the quarter open-circuit branch4Is a reasonable method for improving the performance of the filter. Thus, offset parallel strip lines are proposed herein to meet the requirement of high characteristic impedance, specifically offset the quarter-wavelength open-circuit stubs of the upper and lower layers.And the physical size of each branch can be easily obtained through the impedance relationship between the microstrip line and the parallel strip line. The characteristic impedance of the quarter-wavelength open-circuit branch can be effectively improved by reducing the line width of the quarter-wavelength open-circuit branch and increasing the offset distance of the upper and lower layers of the quarter-wavelength open-circuit branches, so that the purpose of improving the performance of the filter is achieved.
The invention has the following beneficial effects:
the band-pass filter part of the T-shaped structure introduces a half-wavelength open-circuit branch to generate two transmission zeros, so that the selectivity is obviously enhanced. The parallel strip lines (quarter-wavelength open-circuit branches) of the upper layer and the lower layer are offset, so that the filter breaks through the process limitation of the traditional microstrip line, easily obtains a high characteristic impedance value exceeding 300 omega, and has narrower 1dB relative bandwidth, wide 20dB relative absorption bandwidth and good passband selectivity.
Drawings
The invention will be further described with reference to the accompanying drawings;
fig. 1 is a perspective view of a structure of a double-sided parallel strip line-based non-reflection band-pass filter of the present invention.
Figure 2 is a top perspective view of a double-sided parallel stripline based reflectionless bandpass filter structure of the present invention.
FIG. 3 is a schematic diagram of quarter-wave open stub deflection.
Fig. 4-1 is a schematic structural diagram of a double-sided parallel strip line-based non-reflective band-pass filter according to the present invention.
Fig. 4-2 is a schematic diagram of a pi-type network structure of the double-sided parallel strip line-based non-reflection band-pass filter of the invention.
FIG. 5-1 shows a double-sided parallel stripline based reflectionless bandpass filter of the present invention at different Z4In the case of which the input impedance Z of the band-stop filter section is absorbedin1Graph of the variation of (c).
FIG. 5-2 shows the double-sided parallel strip line based non-reflective bandpass filter of the present invention at different Z2In the case of which the input impedance Z of the band-stop filter section is absorbedin1Graph of the variation of (c).
FIGS. 5-3 are graphs of the reflection-free bandpass filter of the present invention based on two-sided parallel striplines at different Z3In the case of which the input impedance Z of the band-stop filter section is absorbedin1Graph of the variation of (c).
FIG. 6 is a diagram of a double-sided parallel strip line based non-reflective bandpass filter S according to the present invention11The relationship between the amplitude and the normalized frequency is shown schematically.
Fig. 7 is a frequency response of a double-sided parallel stripline based reflectionless bandpass filter of the present invention.
FIG. 8 is a characteristic impedance Z of a double-sided parallel strip line based non-reflective bandpass filter offset parallel strip line of the present invention4With different offset distances d down to w4The ratio of/h.
Fig. 9 is a graph comparing simulation results and test results of the reflection-free parallel stripline bandpass filter of this example.
Detailed Description
The invention is further described with reference to the following figures and specific embodiments.
Reference is made to fig. 1 and 2, which are a 3D perspective view and a top view, respectively, of a double-sided parallel stripline based reflectionless bandpass filter embodying the present invention. The filter comprises an upper metal strip 1, a substrate 2 and a lower metal strip 3 which are sequentially stacked from top to bottom. The upper metal strip 1 and the lower metal strip 2 each include an input end 50 Ω transmission line 4, an output end 50 Ω transmission line 4', a T-type band-pass filter disposed between the input and output transmission lines, and two symmetrically arranged absorption band-stop filters connected to the input and output transmission lines.
The T-band pass filter consists of a half-wavelength transmission line 5 and a centrally loaded half-wavelength open stub 9. The absorption band-stop filter of the upper metal strap 1 consists of quarter-wave transmission lines 8 and 8 ', quarter-wave short-circuit branches 7 and 7 ', quarter-wave open-circuit branches 10 and 10 ' and terminal absorption load resistors 11 and 11 ' which are respectively connected to the tail ends of the quarter-wave transmission lines 8 and 8 '. The absorption band-stop filter of the lower metal strip 1 consists of quarter-wave transmission lines 8 and 8 ', quarter-wave short-circuit branches 7 and 7' and quarter-wave open-circuit branches 10 and 10 'which are respectively connected with the tail ends of the quarter-wave transmission lines 8 and 8'.
The outer ends of the quarter-wave short circuit branches 7 and 7 'of the absorption type band elimination filters with the upper and lower layers of metal strips are grounded through the first metalized through holes 6 and 6', and the outer ends of the terminal absorption load resistors 11 and 11 'are grounded through the second metalized through holes 12 and 12'.
An offset with a distance d is formed between the quarter-wave open branches 10 and 10 'of the absorption type band elimination filter of the upper metal strip 1 and the quarter-wave open branches 10 and 10' of the absorption type band elimination filter of the lower metal strip 3.
The embodiment of the invention optimizes the sizes of all parts of the filter, and the specific parameters of the filter are shown in the following table:
in the table, l and w are the length and width of the 50 Ω parallel strip line of the input/output port, respectively, and l0And w0Length and width of open-circuited branches of one-half wavelength, respectively, < i >1And w1Half the length and width, respectively, of a half-wavelength parallel strip, l2And w2Length and width, respectively, of quarter-wave parallel strip lines3And w3Length and width, respectively, of the short-circuited branches of quarter wavelength4And w4The length and the width of the quarter-wavelength open-circuit branch are respectively, d is the offset distance of an upper metal strip and a lower metal strip of a parallel strip line of the quarter-wavelength open-circuit branch, and h is the thickness of the substrate. The substrate used in the design was Rogers RO4003 with a dielectric constant of εr3.55, loss tangent tan delta 2.7 × 10-3And the thickness t of the upper and lower layers of metal strips is 0.035 mm.
The design, analysis process and effect of the present invention will be described in detail with reference to the accompanying drawings
FIG. 4-1 shows the present inventionThe structure diagram of the reflecting double-sided parallel strip line band-pass filter can be divided into two parts, one is a T-shaped band-pass filter part, and the other is two absorbing band-stop filter parts which are symmetrically arranged. The absorbing band stop filter in fig. 4-1 consists of a quarter-wave transmission line (Z)2) One quarter wavelength short circuit branch (Z)3) Quarter wave open circuit branch (Z)4) And a terminating absorbing load resistance (R ═ Z)050 Ω). For the absorbing band stop filter part, its input impedance Zin1Can be expressed as:
in the formula, Z0Is a 50 Ω port impedance, Z2To absorb the quarter-wave transmission line impedance, Z, in a band-stop filter3For absorbing the impedance of a quarter-wave short stub in a band-stop filter, Z4In order to absorb the quarter-wavelength open-circuit branch impedance in the band-stop filter, theta is the angle (phase angle) of each quarter-wavelength branch of the absorption band-stop filter, and j represents an imaginary number unit.
According to the formula (1), the impedance of each branch of the absorption band elimination filter to the input impedance Z of the absorption band elimination filter can be specifically analyzedin1The influence of (c). On this basis, the following points can be seen.
1) As can be seen from FIG. 5-1, with Z4Increase of (2), Zin1Slope (K) of1) At the center frequency (f ═ f)0) The vicinity increases rapidly. At the same time, has a high impedance value Zin1This means that the bandwidth of the absorbing band-stop filter is also narrowed. At the same time, with Z4Increase of (2), Zin1The deviation with respect to 50 Ω becomes small within the stop band.
2) As can be seen from FIGS. 5-2, f0Nearby Zin1Slope K of1With Z2Is increased and decreased. In addition, Z of the entire frequency bandin1Offset by Z with respect to 50 Ω2The effect of different impedance values.
3) FIGS. 5-3 illustrateZin1At a different Z3Curve of lower, change Z3Value of is in f0Nearby Zin1Slope K of the variation curve1The influence is not great. However, at 0.5f0And 1.5f0Where it affects Zin1With respect to a deviation of 50 omega.
As shown in fig. 4-2, the entire circuit can be viewed as a pi network. In the meantime, the T-band-pass filter consists of a one-half wavelength transmission line (Z)1) And a center-loaded one-half wavelength open stub (Z)s) Composition that can generate two transmission zeros for better out-of-band rejection. The ABCD matrix of the absorption band-stop filter and the band-pass filter is MABSFAnd MBPFAnd can be expressed as the following formulas (2) and (3):
wherein M isABSFABCD matrix representing an absorbing band stop filter, MBPFAn ABCD matrix of a band pass Filter, ABSF an Absorptive BandStop Filter, and BPF a BandPass Filter. Z1Impedance of transmission line, Z, representing half wavelength of band-pass filtersRepresenting the impedance of the open-circuit branch of one-half wavelength loaded at the center of the band-pass filter, theta representing the electrical angle (phase angle) of each branch of one-quarter wavelength of the band-pass filter, thetasRepresenting the electrical angle (phase angle), Z, of each branch of a half-wavelength of the bandpass filterin1Representing the input impedance of the absorbing band stop filter.
Based on this, the ABCD matrix of the entire circuit can be expressed as:
wherein M represents the ABCD matrix of the entire Π -network circuit.
The S matrix of the proposed parallel-stripline-based reflectionless bandpass filter can thus be derived from the ABCD matrix of the entire circuit. S11And S21Can be respectively expressed as:
S11denotes the reflection coefficient, S21Representing the transmission coefficient.
From the formulas (1) to (6), the following conclusions can be drawn.
1) When theta issWhen 2 θ is 180 ° (note: θ represents an electrical angle), S can be obtained110 (amplitude of 0) and S211 (amplitude of 1). Therefore, will be at f0A transmission pole is generated at (center frequency). Meanwhile, according to the formula (5), S is plotted in FIG. 611The amplitude variation curve of (2). It can be seen that since two absorbing band reject filters are used here, there are four | S' S11Points where | is close to zero are generated.
2) When theta iss2 θ 90 ° or θsWhen 2 θ is 270 °, S is obtained21And | ═ 0. This means that two out-of-band transmission zeros will appear at f0/2 and 3f0At/2.
The frequency response of the filter is analyzed at different Absorption Band Stop Filter (ABSF) and Band Pass Filter (BPF) parameters. For the Absorbing Band Stop Filter (ABSF) section, with Z4The selectivity of the proposed filter is enhanced and the bandwidth is narrowed. At the same time, the alignment non-reflection performance is not greatly affected. Thus, the out-of-band roll-off rate can be by Z4And flexible adjustment. However, in reducing Z2Or increase Z3In the case of (1), as shown in FIGS. 5-2 and 5-3Z of (A)in1Resulting in deterioration of matching performance, although enhanced selectivity can be obtained. Therefore, in consideration of the balance between selectivity and non-reflection property, a quarter-wavelength open stub (Z) having a high impedance value is selected4) The method is a reasonable method for improving the performance of the filter. For a Band Pass Filter (BPF) section, the characteristic impedance value Z of a half-wavelength transmission line is increased1The roll-off rate out of band can be improved but the impedance match becomes worse. In order to balance the selectivity and the impedance matching performance of the filter, a reasonable characteristic impedance value Z of the half-wavelength open-circuit branch node needs to be selectedsAnd the analysis is about 80 omega. FIG. 7 is a graph of the frequency response of the double-sided parallel stripline based reflectionless bandpass filter of the present invention, where it is easy to see the agreement between the frequency response and the analysis, at f0、f0/2 and 3f0A transmission pole and two transmission zeros are generated at/2, and there are five | S in the pass band frequency range11Zero point of | s. We adopt the design method of parallel strip lines in order to remarkably improve Z4The following two design steps are performed: i.e. reducing the line width w of the parallel strip lines4And at a fixed line width w4The top and bottom metal strips are offset, as can be seen from fig. 8, increasing the offset distance d and decreasing w4For increasing Z4Are all effective.
Based on the above analysis, we designed a non-reflective double-sided parallel-bandpass filter with a structure shown in fig. 1. Fig. 9 is a graph comparing the simulation results and the test results of the reflection-free parallel-stripline bandpass filter of the present example, showing good consistency. The center frequency is 5.025GHz, the 20-dB absorption relative bandwidth is 32%, the 1-dB relative bandwidth is 7.16%, the insertion loss is 0.83dB, the out-of-band roll-off rate is 22.1dB/GHz, a pair of transmission zeros are generated at 2.42GHz and 7.26GHz, and the out-of-band performance is improved.
In addition to the above embodiments, the present invention may have other embodiments. All technical solutions formed by adopting equivalent substitutions or equivalent transformations fall within the protection scope of the claims of the present invention.
Claims (5)
1. The utility model provides a no reflection band pass filter based on two-sided parallel band line, contains base plate (2), divide locate base plate (2) on the parallel of bottom surface, lower bottom surface and each other be upper metal strap (1) and lower floor metal strap (3) of metal ground, its characterized in that: the upper metal strip (1) and the lower metal strip (3) both comprise input transmission lines (4), output transmission lines (4'), a T-shaped band-pass filter arranged between the input transmission lines and the output transmission lines, and two absorption band-stop filters which are symmetrically arranged and connected with the input transmission lines and the output transmission lines; the T-shaped band-pass filter consists of a transmission line (5) with half wavelength and a half-wavelength open-circuit branch (9) loaded at the center; the absorption type band elimination filter of the upper metal strip (1) consists of quarter-wave transmission lines (8, 8 '), quarter-wave short-circuit branches (7, 7 ') respectively connected to the tail ends of the quarter-wave transmission lines (8, 8 '), quarter-wave open-circuit branches (10, 10 ') and terminal absorption load resistors (11, 11 '); the absorption band elimination filter of the lower metal strip (1) consists of quarter-wavelength transmission lines (8, 8 '), quarter-wavelength short-circuit branches (7, 7') and quarter-wavelength open-circuit branches (10, 10 ') which are respectively connected with the tail ends of the quarter-wavelength transmission lines (8, 8'); the outer ends of the quarter-wavelength short circuit branches (7, 7 ') of the absorption type band elimination filters with the upper and lower layers of metal strips are grounded, and the outer ends of the terminal absorption load resistors (11, 11') are grounded; an offset with a distance d is formed between the quarter-wave open branches (10, 10 ') of the absorption type band elimination filter of the upper metal strip (1) and the quarter-wave open branches (10, 10') of the absorption type band elimination filter of the lower metal strip (3).
2. The double-sided parallel stripline-based reflectionless bandpass filter of claim 1, wherein: the outer ends of the quarter-wavelength short circuit branches (7, 7 ') of the absorption band elimination filters with the upper and lower layers of metal strips are connected through first metalized through holes (6, 6').
3. The double-sided parallel stripline-based reflectionless bandpass filter of claim 1, wherein: the outer ends of the terminal absorption load resistors (11, 11 ') are electrically connected with the ends of the quarter-wave transmission lines (8, 8 ') of the lower metal strip (3) through second metallized through holes (12, 12 ').
4. The double-sided parallel stripline-based reflectionless bandpass filter of claim 1, wherein: the input transmission line (4) and the output transmission line (5) are both 50 omega transmission lines.
5. The double-sided parallel stripline-based reflectionless bandpass filter of claim 1, wherein: the resistance of the terminating absorption load resistor is 50 omega.
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| CN114976540A (en) * | 2022-03-31 | 2022-08-30 | 南通大学 | No-reflection band-pass filter based on three-wire coupling structure |
| CN116937093A (en) * | 2023-09-15 | 2023-10-24 | 南京邮电大学 | Novel broadband reflection-free band-pass filter |
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| CN114597617A (en) * | 2022-03-31 | 2022-06-07 | 南通大学 | Balanced type non-reflection band-pass filter |
| CN114976540A (en) * | 2022-03-31 | 2022-08-30 | 南通大学 | No-reflection band-pass filter based on three-wire coupling structure |
| CN114976540B (en) * | 2022-03-31 | 2023-11-03 | 南通大学 | Reflection-free band-pass filter based on three-wire coupling structure |
| CN114597617B (en) * | 2022-03-31 | 2023-11-10 | 南通大学 | Balanced type reflection-free band-pass filter |
| CN116937093A (en) * | 2023-09-15 | 2023-10-24 | 南京邮电大学 | Novel broadband reflection-free band-pass filter |
| CN116937093B (en) * | 2023-09-15 | 2023-11-21 | 南京邮电大学 | Broadband reflection-free band-pass filter |
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| CN113193316B (en) | 2021-10-29 |
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