CN112202419B - Three-frequency negative group delay microwave circuit - Google Patents
Three-frequency negative group delay microwave circuit Download PDFInfo
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
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Abstract
The embodiment of the application discloses a three-frequency negative group delay microwave circuit, which is characterized by comprising the following components: the device comprises an input port, a microstrip line, an output port, an absorption resistor, a matching resistor and a parallel unit; the microstrip line comprises an input microstrip line and an output microstrip line which are positioned at two sides of the matching resistor, and the input port is connected with the output microstrip line through the matching resistor and then connected with the output port to form an upper branch; the absorption resistor comprises a first absorption resistor and a second absorption resistor which are connected in series, the input port is connected with the first absorption resistor and the parallel unit in parallel, and then is connected with the second absorption resistor and then is connected with the output port to form a lower branch; the parallel unit is positioned between the first absorption resistor and the second absorption resistor and comprises a first transmission line, a second transmission line and a third transmission line which are connected in series. The application can realize the negative group delay characteristic of three frequency bands, and has the characteristics of arbitrary working frequency ratio, good impedance matching of input and output ports and the like.
Description
Technical Field
The application relates to the technical field of microwave circuit design, in particular to a three-frequency negative group delay microwave circuit.
Background
Modern wireless communications are moving toward multiple functions and multiple frequency bands, and many radio system standards require multiple frequency band supported modes of operation, which requires the use of multiple frequency microwave circuits to reduce the size, weight and cost of the system, and thus the study of multiple frequency negative group delay microwave circuits is of great interest. The first double-frequency negative group delay microwave circuit is composed of a quarter-wavelength composite left-hand transmission line and a quarter-wavelength composite right-hand transmission line, and the design is complex. An active double-frequency negative group delay circuit is generated, and the attenuation of signals is compensated. In order to reduce the size, many scholars have proposed miniaturized circuit structures. However, these negative group delay microwave circuits can only realize dual-band characteristics, and can only replace two single-band circuits. In order to meet the application requirements of the tri-band system and further reduce the circuit size, it is necessary to explore the tri-band negative group delay microwave circuit. At present, the existing three-frequency negative group delay microwave circuit is formed by simply combining three negative group delay units working at different frequencies, and can not realize the same negative group delay value under the condition that the impedance of three frequency band input and output ports is matched, and the working frequency ratio can be smaller in the range of realization, so that the working frequency of an actual radio system cannot be covered. In view of the foregoing, it is desirable to provide a three-frequency negative group delay microwave circuit that satisfies the application of a multi-frequency radio system.
Disclosure of Invention
Based on the above, in order to solve the defects existing in the prior art, a three-frequency negative group delay microwave circuit meeting the application of a multi-frequency radio system is specially provided.
Based on the above purpose, the technical scheme of the application is as follows:
a three-frequency negative group delay microwave circuit, comprising: the device comprises an input port, a microstrip line, an output port, an absorption resistor, a matching resistor and a parallel unit; the microstrip line comprises an input microstrip line and an output microstrip line which are positioned at two sides of the matching resistor, wherein the input port is connected with the output microstrip line through the matching resistor by the input microstrip line and then connected with the output port to form an upper branch; the absorption resistor comprises a first absorption resistor and a second absorption resistor which are connected in series, the input port is connected with the first absorption resistor, and the input port is connected with the second absorption resistor after being connected with the parallel unit in parallel and then is connected with the output port to form a lower branch; the parallel unit is positioned between the first absorption resistor and the second absorption resistor and comprises a first transmission line, a second transmission line and a third transmission which are connected in series.
Optionally, in one embodiment, lengths of the first transmission line, the second transmission line and the third transmission line are all one quarter of a wavelength corresponding to a second working frequency, where the second working frequency is given according to an actual requirement.
Optionally, in one embodiment, the lengths of the input microstrip line and the output microstrip line are each half of a wavelength corresponding to the second operating frequency.
Optionally, in one embodiment, the transmission coefficient S of the triple-frequency negative group delay microwave circuit 21 The calculation formula of (2) is as follows:
the calculation formula of the group delay tau of the three-frequency negative group delay microwave circuit is as follows:
wherein X is 1 ＝Y 0 (a 1 -a 3 ) (3)
X 2 ＝Y 0 (a 2 -a 4 ) (4)
X 3 ＝(Y 0 +a 1 )(Y 0 +a 3 )-a 2 a 4 (5)
X 4 ＝a 2 (Y 0 +a 3 )+a 4 (Y 0 +a 1 ) (6)
X′ 1 ＝Y 0 (a′ 1 -a′ 3 ) (7)
X′ 2 ＝Y 0 (a′ 2 -a′ 4 ) (8)
X′ 3 ＝Y 0 (a′ 1 +a′ 3 )+a′ 1 a 3 +a 1 a′ 3 -a′ 2 a 4 -a 2 a′ 4 (9)
X′ 4 ＝Y 0 (a′ 2 +a′ 4 )+a′ 2 a 3 +a 2 a′ 3 +a′ 1 a 4 +a 1 a′ 4 (10)
Z′ in ＝z 1 (P-Q)/[z 1 (z 2 +z 3 cot(θ 3 )tan(θ 2 ))+z 2 (z 3 cot(θ 3 )-z 2 tan(θ 2 ))tan(θ 1 )] 2 (20)
Wherein z is 1 、τ 1 And theta 1 The characteristic impedance, the group delay value and the electrical length, z, of the first transmission line are respectively 2 、τ 2 And theta 2 The characteristic impedance, the group delay value and the electrical length, z, of the second transmission line are respectively 3 、τ 3 And theta 3 The characteristic impedance, the group delay value and the electrical length of the third transmission line are respectively r 1 To absorb the resistance value of the resistor, z 4 、τ 4 And theta 4 Respectively the characteristic impedance, the group delay value and the electrical length of the microstrip line, r 2 To match the resistance value of the resistor, Y 0 Is the port admittance.
The implementation of the embodiment of the application has the following beneficial effects:
the application provides a three-frequency negative group delay microwave circuit which meets the application of a multi-frequency radio system, solves the contradiction problem that the input-output impedance matching and the working frequency ratio can not be changed at any time in the prior art, can realize the negative group delay characteristic of three frequency bands, has the characteristics of random working frequency ratio, good input-output port impedance matching and the like, and can reach the realization range of the ratio of a third working frequency to a first working frequency of 3.4-11.2 under the condition of determining a second working frequency, and the return loss in each negative group delay frequency band can reach more than 12 dB.
Drawings
In order to more clearly illustrate the embodiments of the application or the technical solutions in the prior art, the drawings that are required in the embodiments or the description of the prior art will be briefly described, it being obvious that the drawings in the following description are only some embodiments of the application, and that other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
Wherein:
FIG. 1 is a schematic diagram of a three-frequency negative group delay microwave circuit of the present application;
FIG. 2 is a group delay plot of a three-frequency negative group delay microwave circuit according to the present application;
FIG. 3 is a graph of S-parameters of a triple-frequency negative group delay microwave circuit according to the present application;
in the figure: 1. the parallel unit comprises a parallel unit (11), a first transmission line (12), a second transmission line (13), a third transmission line (2), an absorption resistor (21), a first absorption resistor (22), a second absorption resistor (3), a microstrip line (31), an input microstrip line (32), an output microstrip line (4), a matching resistor (5), an input port (6) and an output port.
Detailed Description
The present application will be described in further detail with reference to the drawings and examples, in order to make the objects, technical solutions and advantages of the present application more apparent. It should be understood that the specific embodiments described herein are for purposes of illustration only and are not intended to limit the scope of the application.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used herein in the description of the application is for the purpose of describing particular embodiments only and is not intended to be limiting of the application. It will be understood that the terms first, second, etc. as used herein may be used to describe various elements, but these elements are not limited by these terms. These terms are only used to distinguish one element from another element. For example, a first element could be termed a second element, and, similarly, a second element could be termed a first element, without departing from the scope of the present application. Both the first element and the second element are elements, but they are not the same element.
In this embodiment, a three-frequency negative group delay microwave circuit is specifically provided, as shown in fig. 1, and is characterized by comprising: an input port 5, a microstrip line 3, an output port 6, an absorption resistor 2, a matching resistor 4 and a parallel unit 1; the microstrip line 3 comprises an input microstrip line 31 and an output microstrip line 32 which are positioned at two sides of the matching resistor 4, and the input port 5 is connected with the output microstrip line 32 through the matching resistor 4 by the input microstrip line 31 and then is connected with the output port 6 to form an upper branch; the absorption resistor 2 comprises a first absorption resistor 21 and a second absorption resistor 22 which are connected in series, and the input port 5 is connected with the first absorption resistor 21, the parallel unit 1 and the second absorption resistor 22, and then connected with the output port 6 to form a lower branch; the parallel unit 1 is located between a first absorption resistor 21 and a second absorption resistor 22, and comprises a first transmission line 11, a second transmission line 12 and a third transmission line 13 which are connected in series.
In one embodiment, the lengths of the first transmission line 11, the second transmission line 12, and the third transmission line 13 are all one quarter of the wavelength corresponding to the second operating frequency, where the second operating frequency is given according to the actual requirement.
In one embodiment, the lengths of the input microstrip line 31 and the output microstrip line 32 are each half of the wavelength corresponding to the second operating frequency.
In one embodiment, the transmission coefficient S of the triple-frequency negative group delay microwave circuit 21 The calculation formula of (2) is as follows:
the calculation formula of the group delay tau of the three-frequency negative group delay microwave circuit is as follows:
wherein X is 1 ＝Y 0 (a 1 -a 3 ) (3)
X 2 ＝Y 0 (a 2 -a 4 ) (4)
X 3 ＝(Y 0 +a 1 )(Y 0 +a 3 )-a 2 a 4 (5)
X 4 ＝a 2 (Y 0 +a 3 )+a 4 (Y 0 +a 1 ) (6)
X′ 1 ＝Y 0 (a′ 1 -a′ 3 ) (7)
X′ 2 ＝Y 0 (a′ 2 -a′ 4 ) (8)
X′ 3 ＝Y 0 (a′ 1 +a′ 3 )+a′ 1 a 3 +a 1 a′ 3 -a′ 2 a 4 -a 2 a′ 4 (9)
X′ 4 ＝Y 0 (a′ 2 +a′ 4 )+a′ 2 a 3 +a 2 a′ 3 +a′ 1 a 4 +a 1 a′ 4 (10)
Z′ in ＝z 1 (P-Q)/[z 1 (z 2 +z 3 cot(θ 3 )tan(θ 2 ))+z 2 (z 3 cot(θ 3 )-z 2 tan(θ 2 ))tan(θ 1 )] 2 (20)
Wherein z is 1 、τ 1 And theta 1 The characteristic impedance, the group delay value and the electrical length, z, of the first transmission line 11 respectively 2 、τ 2 And theta 2 The characteristic impedance, the group delay value and the electrical length, z, of the second transmission line 12 respectively 3 、τ 3 And theta 3 The characteristic impedance, the group delay value and the electrical length of the third transmission line 13, r 1 To absorb the resistance value of the resistor 2, z 4 、τ 4 And theta 4 Respectively the characteristic impedance, the group delay value and the electrical length of the microstrip line 3, r 2 To match the resistance value of the resistor 4, Y 0 Is the port admittance.
It can be known that, although the first operating frequency, the second operating frequency and the third operating frequency are given according to actual requirements when three operating frequencies are known in the initial design, based on the design scheme, the characteristic impedance of each transmission line is adjusted after the length of each transmission line is determined according to the second operating frequency, so that the first operating frequency and the third operating frequency can be moved to the required operating frequencies, and the circuit can work at the required three frequencies; meanwhile, the circuit structure corresponding to the scheme can be adjusted according to the actual requirement, namely, when the second working frequency is not changed, the first working frequency and the third working frequency are changed by adjusting the characteristic impedance of each transmission line, so that the working frequency ratio can be adjusted at will under the condition that the impedance matching of the input and output ports is good, and the working requirement of various more three-frequency systems is met.
For example, in this example, by increasing the characteristic impedance of the first transmission line 11 and the second transmission line 12 and decreasing the characteristic impedance of the third transmission line 13, it is possible to reduce the first operating frequency of the present circuit while increasing the third operating frequency; at the same time the negative group delay value at the first and third operating frequencies can be increased by increasing the characteristic impedance of the microstrip line 3. And when the second operating frequency is given, the achievable range of the ratio of the third operating frequency to the first operating frequency of the circuit is 3.4-11.2.
In order to further describe the three-frequency negative group delay microwave circuit provided by the application, a specific example implemented on the premise of the technical scheme of the application is described in detail below, but the protection scope of the application is not limited to the following embodiments, and the methods used in the following embodiments are conventional methods unless otherwise specified.
Specific example (1): this example illustrates the case of the three-frequency negative group delay microwave circuit satisfying the application of the multi-frequency radio system when the first operating frequency is 1.2GHz, the second operating frequency is 3.5GHz, and the third operating frequency is 5.8 GHz.
As shown in FIG. 2, experiments prove that the three-frequency negative group delay microwave circuit has a group delay value of-1.08 ns at the first working frequency of 1.2GHz, a group delay value of-1.19 ns at the second working frequency of 3.5GHz and a group delay value of-1.09 ns at the third working frequency of 5.8GHz, and realizes the three-frequency negative group delay characteristic. As shown in fig. 3, experiments prove that at the frequency of 1.2GHz, the signal attenuation of the three-frequency negative group delay microwave circuit is 16.38dB, the return loss of an input/output port reaches 16.09dB, and the return loss of the input/output port is greater than 12.1dB in the frequency range of 1.102 GHz-1.251 GHz, which indicates that the input/output port obtains good matching performance in the first negative group delay working frequency range; at the frequency of 3.5GHz, the signal attenuation of the three-frequency negative group delay microwave circuit is 24.58dB, the return loss of an input/output port reaches 17.6dB, and the return loss of the input/output port is more than 14.7dB in the frequency range of 3.351 GHz-3.652 GHz, which indicates that the input/output port also obtains good matching performance in the second negative group delay working frequency range; at the frequency of 5.8GHz, the signal attenuation of the novel three-frequency negative group delay microwave circuit is 18.9dB, the return loss of an input/output port reaches 16.4dB, and the return loss of the input/output port is greater than 13.2dB in the frequency range of 5.694 GHz-5.902 GHz, which indicates that the input/output port still obtains good matching performance in the third negative group delay working frequency range.
In summary, the three-frequency negative group delay microwave circuit realizes three-frequency negative group delay characteristics, has good impedance matching of input and output ports in three negative group delay working frequency ranges, and is very suitable for application of a multi-frequency radio system due to the characteristics of simplicity, practicability and the like of the design circuit.
The foregoing examples illustrate only a few embodiments of the application and are described in detail herein without thereby limiting the scope of the application. It should be noted that it will be apparent to those skilled in the art that several variations and modifications can be made without departing from the spirit of the application, which are all within the scope of the application. Accordingly, the scope of protection of the present application is to be determined by the appended claims.
Claims (4)
1. A three-frequency negative group delay microwave circuit, comprising: the micro-strip antenna comprises an input port (5), a micro-strip line (3), an output port (6), an absorption resistor (2), a matching resistor (4) and a parallel unit (1); the microstrip line (3) comprises an input microstrip line (31) and an output microstrip line (32) which are positioned at two sides of the matching resistor (4), and the input port (5) is connected with the output microstrip line (32) through the matching resistor (4) by the input microstrip line (31) and then is connected with the output port (6) to form an upper branch; the absorption resistor (2) comprises a first absorption resistor (21) and a second absorption resistor (22) which are connected in series, the input port (5) is connected with the first absorption resistor (21), and is connected with the second absorption resistor (22) after being connected with the parallel unit (1) in parallel so as to form a lower branch circuit; the parallel unit (1) is arranged between a first absorption resistor (21) and a second absorption resistor (22), and comprises a first transmission line (11), a second transmission line (12) and a third transmission line (13) which are connected in series.
2. The three-frequency negative group delay microwave circuit according to claim 1, wherein the lengths of the first transmission line (11), the second transmission line (12) and the third transmission line (13) are all one quarter of the wavelength corresponding to the second operating frequency, and the second operating frequency is set according to actual requirements.
3. The three-frequency negative group delay microwave circuit according to claim 1 or 2, wherein the lengths of the input microstrip line (31) and the output microstrip line (32) are each half of the wavelength corresponding to the second operating frequency.
4. The three-frequency negative group delay microwave circuit of claim 1, wherein the transmission coefficient S of the three-frequency negative group delay microwave circuit 21 The calculation formula of (2) is as follows:
the calculation formula of the group delay tau of the three-frequency negative group delay microwave circuit is as follows:
wherein X is 1 ＝Y 0 (a 1 -a 3 ) (3)
X 2 ＝Y 0 (a 2 -a 4 ) (4)
X 3 ＝(Y 0 +a 1 )(Y 0 +a 3 )-a 2 a 4 (5)
X 4 ＝a 2 (Y 0 +a 3 )+a 4 (Y 0 +a 1 ) (6)
X′ 1 ＝Y 0 (a′ 1 -a′ 3 ) (7)
X′ 2 ＝Y 0 (a′ 2 -a′ 4 ) (8)
X′ 3 ＝Y 0 (a′ 1 +a′ 3 )+a′ 1 a 3 +a 1 a′ 3 -a′ 2 a 4 -a 2 a′ 4 (9)
X′ 4 ＝Y 0 (a′ 2 +a′ 4 )+a′ 2 a 3 +a 2 a′ 3 +a′ 1 a 4 +a 1 a′ 4 (10)
Z′ in ＝z 1 (P-Q)/[z 1 (z 2 +z 3 cot(θ 3 )tan(θ 2 ))+z 2 (z 3 cot(θ 3 )-z 2 tan(θ 2 ))tan(θ 1 )] 2 (20)
Wherein z is 1 、τ 1 And theta 1 The characteristic impedance, the group delay value and the electrical length, z, of the first transmission line (11) 2 、τ 2 And theta 2 The characteristic impedance, the group delay value and the electrical length, z, of the second transmission line (12) 3 、τ 3 And theta 3 The characteristic impedance, the group delay value and the electrical length of the third transmission line (13), r 1 To absorb the resistance value of the resistor (2), z 4 、τ 4 And theta 4 Respectively the characteristic impedance, the group delay value and the electrical length of the microstrip line (3), r 2 To match the resistance value of the resistor (4), Y 0 Is the port admittance.
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| CN113328717B (en) * | 2021-05-07 | 2023-10-20 | 大连海事大学 | Double-frequency low-insertion-loss negative group delay microwave circuit based on three-conductor asymmetric coupling line |
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