CN110737178B - 描绘数据生成方法、计算机可读记录介质及多带电粒子束描绘装置 - Google Patents

描绘数据生成方法、计算机可读记录介质及多带电粒子束描绘装置 Download PDF

Info

Publication number
CN110737178B
CN110737178B CN201910649368.3A CN201910649368A CN110737178B CN 110737178 B CN110737178 B CN 110737178B CN 201910649368 A CN201910649368 A CN 201910649368A CN 110737178 B CN110737178 B CN 110737178B
Authority
CN
China
Prior art keywords
vertex
data
row
mentioned
computer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201910649368.3A
Other languages
English (en)
Chinese (zh)
Other versions
CN110737178A (zh
Inventor
坂本信二
安井健一
稻叶千晓
山村光
福岛悟
赤羽芳规
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nuflare Technology Inc
Original Assignee
Nuflare Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nuflare Technology Inc filed Critical Nuflare Technology Inc
Publication of CN110737178A publication Critical patent/CN110737178A/zh
Application granted granted Critical
Publication of CN110737178B publication Critical patent/CN110737178B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/70508—Data handling in all parts of the microlithographic apparatus, e.g. handling pattern data for addressable masks or data transfer to or from different components within the exposure apparatus
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
    • G03F7/2059—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a scanning corpuscular radiation beam, e.g. an electron beam
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/20—Masks or mask blanks for imaging by charged particle beam [CPB] radiation, e.g. by electron beam; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/705—Modelling or simulating from physical phenomena up to complete wafer processes or whole workflow in wafer productions
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70558—Dose control, i.e. achievement of a desired dose
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/706835—Metrology information management or control
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/706843—Metrology apparatus
    • G03F7/706845—Calibration, e.g. tool-to-tool calibration, beam alignment, spot position or focus
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70733—Handling masks and workpieces, e.g. exchange of workpiece or mask, transport of workpiece or mask
    • G03F7/70741—Handling masks outside exposure position, e.g. reticle libraries
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/045—Beam blanking or chopping, i.e. arrangements for momentarily interrupting exposure to the discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/10—Lenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/147—Arrangements for directing or deflecting the discharge along a desired path
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/302—Controlling tubes by external information, e.g. program control
    • H01J37/3023—Program control
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H01J37/3177—Multi-beam, e.g. fly's eye, comb probe
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04—Means for controlling the discharge
    • H01J2237/043—Beam blanking
    • H01J2237/0435—Multi-aperture
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H01J2237/202—Movement
    • H01J2237/20221—Translation
    • H01J2237/20228—Mechanical X-Y scanning
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/304—Controlling tubes
    • H01J2237/30472—Controlling the beam
    • H01J2237/30483—Scanning
    • H01J2237/30488—Raster scan
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3175—Lithography
    • H01J2237/31761—Patterning strategy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3175—Lithography
    • H01J2237/31761—Patterning strategy
    • H01J2237/31762—Computer and memory organisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3175—Lithography
    • H01J2237/31769—Proximity effect correction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3175—Lithography
    • H01J2237/31774—Multi-beam

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Library & Information Science (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Electron Beam Exposure (AREA)
CN201910649368.3A 2018-07-18 2019-07-18 描绘数据生成方法、计算机可读记录介质及多带电粒子束描绘装置 Active CN110737178B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2018-135232 2018-07-18
JP2018135232A JP7119688B2 (ja) 2018-07-18 2018-07-18 描画データ生成方法、プログラム、及びマルチ荷電粒子ビーム描画装置

Publications (2)

Publication Number Publication Date
CN110737178A CN110737178A (zh) 2020-01-31
CN110737178B true CN110737178B (zh) 2022-03-08

Family

ID=69170740

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201910649368.3A Active CN110737178B (zh) 2018-07-18 2019-07-18 描绘数据生成方法、计算机可读记录介质及多带电粒子束描绘装置

Country Status (5)

Country Link
US (1) US10971331B2 (https=)
JP (1) JP7119688B2 (https=)
KR (1) KR102293626B1 (https=)
CN (1) CN110737178B (https=)
TW (1) TWI710006B (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7172420B2 (ja) * 2018-10-15 2022-11-16 株式会社ニューフレアテクノロジー 描画データ生成方法及びマルチ荷電粒子ビーム描画装置
JP7552192B2 (ja) * 2020-09-24 2024-09-18 株式会社ニューフレアテクノロジー データ生成方法、荷電粒子ビーム照射装置及びプログラム
JP7639608B2 (ja) 2021-08-10 2025-03-05 株式会社ニューフレアテクノロジー データ生成方法、荷電粒子ビーム照射装置及びプログラム
JP7729132B2 (ja) * 2021-09-14 2025-08-26 株式会社ニューフレアテクノロジー マルチ荷電粒子ビーム描画方法、マルチ荷電粒子ビーム描画装置及びプログラム
JP7775103B2 (ja) * 2022-02-17 2025-11-25 株式会社ニューフレアテクノロジー マルチ電子ビーム描画装置及びマルチ電子ビーム描画方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5581673A (en) * 1993-12-07 1996-12-03 Fujitsu Limited Method and device for dividing and drawing polygons
CN1971571A (zh) * 2005-11-25 2007-05-30 株式会社日立高新技术 半导体图形形状评价装置及形状评价方法
CN101421823A (zh) * 2006-12-29 2009-04-29 株式会社理光 像差评估图案、像差评估方法、像差校正方法、电子束描绘设备、电子显微镜、原盘、压模、记录介质和结构
CN105074896A (zh) * 2013-02-20 2015-11-18 株式会社日立高新技术 图案测定装置以及半导体测量系统

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6063677A (ja) 1983-09-16 1985-04-12 Nec Corp イメ−ジ情報蓄積方式
JP2680295B2 (ja) 1984-03-22 1997-11-19 株式会社東芝 電子ビーム露光装置の描画データ作成方法及びその装置
JPH04274575A (ja) 1991-02-28 1992-09-30 Fujitsu Ltd 図形描画方式
JPH07114591A (ja) 1993-10-18 1995-05-02 Mitsutoyo Corp パターンデータの編集処理システム
JP3239975B2 (ja) 1994-11-29 2001-12-17 富士通株式会社 多角形描画装置
JPH08263673A (ja) 1995-03-20 1996-10-11 Fujitsu Ltd 外周線描画装置
JP3612166B2 (ja) 1997-03-18 2005-01-19 株式会社東芝 荷電ビーム描画データ作成方法および装置
US6128767A (en) * 1997-10-30 2000-10-03 Chapman; David C. Polygon representation in an integrated circuit layout
JP4806463B2 (ja) * 2007-03-20 2011-11-02 富士通セミコンダクター株式会社 図形描画処理装置、および処理方法
JP2009141306A (ja) 2007-11-16 2009-06-25 Jeol Ltd 荷電粒子ビーム描画におけるパターン分割方法
US8378319B2 (en) * 2010-03-22 2013-02-19 Taiwan Semiconductor Manufacturing Company, Ltd. System and method for generating direct-write pattern
US8404403B2 (en) * 2010-06-25 2013-03-26 Intel Corporation Mask design and OPC for device manufacture
JP2016076654A (ja) 2014-10-08 2016-05-12 株式会社ニューフレアテクノロジー 描画データ生成方法、プログラム、マルチ荷電粒子ビーム描画装置、及びパターン検査装置
JP6447163B2 (ja) * 2015-01-21 2019-01-09 株式会社ニューフレアテクノロジー エネルギービーム描画装置の描画データ作成方法
US11244482B2 (en) 2017-01-27 2022-02-08 Mitsubishi Electric Corporation Image drawing device, image drawing method, and image drawing program
JP2018170448A (ja) 2017-03-30 2018-11-01 株式会社ニューフレアテクノロジー 描画データ作成方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5581673A (en) * 1993-12-07 1996-12-03 Fujitsu Limited Method and device for dividing and drawing polygons
CN1971571A (zh) * 2005-11-25 2007-05-30 株式会社日立高新技术 半导体图形形状评价装置及形状评价方法
CN101421823A (zh) * 2006-12-29 2009-04-29 株式会社理光 像差评估图案、像差评估方法、像差校正方法、电子束描绘设备、电子显微镜、原盘、压模、记录介质和结构
CN105074896A (zh) * 2013-02-20 2015-11-18 株式会社日立高新技术 图案测定装置以及半导体测量系统

Also Published As

Publication number Publication date
TWI710006B (zh) 2020-11-11
TW202006793A (zh) 2020-02-01
US20200051782A1 (en) 2020-02-13
JP7119688B2 (ja) 2022-08-17
CN110737178A (zh) 2020-01-31
KR20200010062A (ko) 2020-01-30
US10971331B2 (en) 2021-04-06
JP2020013893A (ja) 2020-01-23
KR102293626B1 (ko) 2021-08-25

Similar Documents

Publication Publication Date Title
CN110737178B (zh) 描绘数据生成方法、计算机可读记录介质及多带电粒子束描绘装置
US11774860B2 (en) Writing data generating method, multi charged particle beam writing apparatus, pattern inspecting apparatus, and computer-readable recording medium
JP7392805B2 (ja) 描画データ生成プログラム、マルチ荷電粒子ビーム描画プログラム及びコンピュータ読み取り可能な記録媒体
KR101782335B1 (ko) 묘화 데이터 생성 방법, 멀티 하전 입자빔 묘화 장치 및 패턴 검사 장치
JP5985852B2 (ja) 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法
CN108717720B (zh) 描绘数据制作方法
US9984853B2 (en) Method for generating writing data
JP6171062B2 (ja) 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法
JP6717406B2 (ja) 描画データ生成方法、プログラム、マルチ荷電粒子ビーム描画装置、及びパターン検査装置

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant