CN110729376A - 基于氧化镍/β-三氧化二镓异质结的紫外探测器及其制备方法 - Google Patents
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Abstract
基于NiO/β‑Ga2O3异质结的紫外探测器及其制备方法，属于光电技术领域，尤其是一种具有ITO/p‑NiO/n‑β‑Ga2O3/Al简单垂直结构的紫外器件及其制备方法。基于NiO/β‑Ga2O3异质结的紫外探测器，从下至上依次是衬底、阳极层、p‑NiO薄膜层、n‑β‑Ga2O3薄膜层，以及阴极层。制备方法包括清洁衬底、p‑NiO薄膜层溅射、n‑β‑Ga2O3薄膜层溅射，以及蒸镀Al阴极层。本发明的器件对紫外光显示出良好的敏感性，器件性能优异。
Description
技术领域
本发明属于光电技术领域，尤其是一种具有ITO/p-NiO/n-β-Ga2O3/Al简单垂直结构的紫外器件及其制备方法。
背景技术
基于宽带隙氧化物半导体材料所制备出的光电探测器具有传统的SiC基、GaN基探测器所没有的优点：不易氧化、尺寸小、反应灵敏、易操作等。迄今为止，许多研究人员已经研制了包括ZnO、TiO2、SnO2、NiO、Ga2O3等在内的具有不同结构的高性能紫外光电探测器。其中，Ga2O3的稳定相β-Ga2O3是一种具有超宽禁带宽度(4.9eV)的直接带隙半导体材料，且生长简单，仅对紫外光波段有高光电响应特性，因此成为近年研制深紫外器件的首选材料。为了优化氧化物基紫外光电探测器的器件性能，可以通过将两种氧化物半导体材料结合成异质结器件。而NiO作为少有的本征p型宽带隙(3.6eV)半导体材料，成为近年研究异质结器件的热点p型材料。并且Ga2O3与NiO两种材料的晶格失配度小，在紫外探测领域显现出巨大的应用潜力。
发明内容
本发明的目的在于提供一种高性能具有ITO/p-NiO/n-β-Ga2O3/Al简单垂直结构的器件及其制备方法。通过使用磁控溅射法和后期退火处理，来有效的改善器件性能，且制备的器件仅对紫外光波段有明显相应。
基于NiO/β-Ga2O3异质结的紫外探测器，其特征在于从下至上依次是衬底、阳极层、p-NiO薄膜层、n-β-Ga2O3薄膜层，以及阴极层。
衬底和阳极层构成ITO玻璃衬底、阴极层为Al电极。
所述的基于NiO/β-Ga2O3异质结的紫外探测器，其制备方法具体如下：
S1，清洁衬底：衬底清洗，干燥，以去除表面污垢，增加薄膜的均匀性和附着性；
S2，p-NiO薄膜层溅射：衬底放入磁控溅射设备中，待真空度抽至低于8.0×10-4Pa后，设定溅射压强为0.4-0.6Pa，溅射功率为200W，预溅射5min后计时溅射55-65min，制备p-NiO薄膜层，薄膜厚度80-120nm；
S3，n-β-Ga2O3薄膜层溅射：按S3步骤溅射操作，设定溅射压强为0.6-0.8Pa，溅射功率为200W，溅射时间为55-65min，制备n-β-Ga2O3薄膜层，薄膜厚度70-110nm；
S4，蒸镀阴极层：在n-β-Ga2O3表面使用掩模板蒸镀阴极层。
所述的阴极层上涂覆银浆引出导线分别作为底部和顶部电极。
文中，Ga2O3即为三氧化二镓；NiO为氧化镍。
本发明的技术效果及优点在于：
(1)在不另加衬底温度的条件下，能够制备出多晶p-NiO和n-β-Ga2O3薄膜，且薄膜表面均匀。
(2)两种异质层的制备均采用同一种方法-磁控溅射方法，制备过程简单、成本低。
(3)具有ITO/p-NiO/n-β-Ga2O3/Al简单垂直结构的器件对紫外光显示出良好的敏感性，器件性能优异。
附图说明
图1为实施例1的异质结器件的结构示意图。
图2为实施例1探测器的p-NiO薄膜的XRD图谱。
图3为实施例1的n-β-Ga2O3薄膜的XRD图谱。
图4为实施例1的异质结器件的I-V分析结果图。
图5为实施例1的异质结器件的响应率(R)。
图6为实施例1的异质结器件的探测率(D*)。
其中，衬底1，阳极层2，p-NiO薄膜层3，n-β-Ga2O3薄膜层4，阴极层5，银浆6，光7。
具体实施方式
以下通过具体实施方式对本发明作进一步的详细说明，但不应将此理解为本发明的范围仅限于以下的实例。在不脱离本发明上述方法思想的情况下,根据本领域普通技术知识和惯用手段做出的各种替换或变更,均应包含在本发明的范围内。
实施例1：基于NiO/β-Ga2O3异质结的紫外探测器，从下至上依次是玻璃衬底1、ITO阳极层2、p-NiO薄膜层3、n-β-Ga2O3薄膜层4，以及Al电极阴极层5。
所述的玻璃衬底1、ITO阳极层2则利用磁控溅射的方法在玻璃基地上镀上一层氧化铟锡(ITO)膜加工制作成ITO玻璃衬底。
所述的基于NiO/β-Ga2O3异质结的紫外探测器，其制备方法具体如下：
S1，清洁ITO玻璃衬底：用于溅射的衬底在氨水、过氧化氢和去离子水的混合溶液中进行湿法清洗，将溶液加热至80℃并保持30min，再用去离子水反复冲洗后氮气喷枪吹干待用，以去除表面污垢，增加薄膜的均匀性和附着性。
S2，p-NiO薄膜层溅射：把清洁待用的ITO玻璃衬底放入磁控溅射设备中的衬底台上，并用掩模板遮住一个角的区域，然后对设备进行抽真空，待真空度抽至6.0×10-4Pa后，设定溅射压强为0.5Pa，溅射功率为200W，预溅射5min后计时溅射60min，制备p-NiO薄膜层，厚度为120nm。
S3，n-β-Ga2O3薄膜层溅射：按S3步骤溅射操作，设定溅射压强为0.7Pa，溅射功率为200W，溅射时间为60min，制备n-β-Ga2O3薄膜层，厚度110nm。
S4，蒸镀Al电极阴极层：在n-β-Ga2O3表面使用掩模板蒸镀上Al电极，掩模板规格为3mm×3mm。拆除掩模板后，在留出的ITO玻璃衬底及蒸镀的Al电极上涂覆银浆6引出导线分别作为底部和顶部电极。
如图2所示，为退火前后p-NiO薄膜的XRD图谱，三个主要的衍射峰分别对应于NiO的(111)、(200)和(220)晶面，沿着(200)晶面择优生长，并且退火处理使得各晶面衍射峰增强，薄膜的结晶性得到改善。
如图3所示，为退火前后n-β-Ga2O3薄膜的XRD图谱，图谱中可以观察到属于β相Ga2O3的6个衍射晶面，沿着
晶面族择优生长，并且退火处理使得薄膜由非晶态转变为晶态。
如图4所示，为p-NiO/n-β-Ga2O3异质结紫外光电探测器的I-V分析结果图，可见在黑暗和光照条件下均显示出较好的器件性能，证明了器件在UV光照射下可产生光生载流子的事实。
如图5所示，为p-NiO/n-β-Ga2O3异质结紫外光电探测器的响应率(R)随偏置电压变化的关系图。可看出，在光功率密度固定的前提下，器件的响应率大体上随着偏压的增大而增大，最大值为1.63×102AW-1。
如图6所示，为p-NiO/n-β-Ga2O3异质结紫外光电探测器的探测率(D*)随偏置电压变化的关系图。探测率大体上随着偏压的增大而呈现出增大的趋势，最高的探测率可达5.0×1011cmHz1/2W-1。
本发明提到的一个或多个步骤并不排斥所述组合步骤还存在其他方法及操作过程；还应注意，该实例仅用于说明本发明的可行性，而不是限制本发明的范围。除此之外，在无实质性改变制备技术内容的情况下，亦当视为本发明的内容。
Claims (3)
1.基于NiO/β-Ga2O3异质结的紫外探测器，其特征在于从下至上依次是衬底、阳极层、p-NiO薄膜层、n-β-Ga2O3薄膜层，以及阴极层。
2.如权利要求1所述的基于NiO/β-Ga2O3异质结的紫外探测器，其特征在于衬底和阳极层构成ITO玻璃衬底、阴极层为Al电极。
3.如权利要求1所述的基于NiO/β-Ga2O3异质结的紫外探测器，其特征在于该探测器的制备方法具体如下：
S1，清洁衬底：衬底清洗，干燥，以去除表面污垢，增加薄膜的均匀性和附着性；
S2，p-NiO薄膜层溅射：衬底放入磁控溅射设备中，待真空度抽至低于8.0×10-4Pa后，设定溅射压强为0.4-0.6Pa，溅射功率为200W，预溅射5min后计时溅射55-65min，制备p-NiO薄膜层，薄膜厚度80-120nm；
S3，n-β-Ga2O3薄膜层溅射：按S3步骤溅射操作，设定溅射压强为0.6-0.8Pa，溅射功率为200W，溅射时间为55-65min，制备n-β-Ga2O3薄膜层，薄膜厚度70-110nm；
S4，蒸镀阴极层：在n-β-Ga2O3表面使用掩模板蒸镀阴极层。
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|---|---|---|---|---|
| CN111613691A (zh) * | 2020-04-16 | 2020-09-01 | 浙江理工大学 | 基于氧化铜/氧化镓纳米柱阵列pn结的柔性紫外探测器及其制备方法 |
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| CN111613691A (zh) * | 2020-04-16 | 2020-09-01 | 浙江理工大学 | 基于氧化铜/氧化镓纳米柱阵列pn结的柔性紫外探测器及其制备方法 |
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| CN114497271A (zh) * | 2021-12-14 | 2022-05-13 | 昆明物理研究所 | 垂直结构NiO/SiO2/ZnO紫外探测器及其制备方法 |
| CN114497277A (zh) * | 2021-12-30 | 2022-05-13 | 昆明物理研究所 | 基于石墨烯/氧化镓异质结的二极管及其制备方法 |
| CN114864732A (zh) * | 2022-03-21 | 2022-08-05 | 电子科技大学 | 紫外光探测器及制备方法 |
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