CN110729374A - 一种提高响应速度的改进的变容器型光电探测器 - Google Patents
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Abstract
一种提高响应速度的改进的变容器型光电探测器，属于光电探测器领域。器件外延结构从下往上依次生长，主要包括InP基衬底、N型接触层、光电探测器的主体PIN层以及P型接触层，光从P型面垂直入射；所述衬底材料InP的带隙比较宽，掺杂Si可以达到很高的浓度，接触效果好，同理选择生长厚度为300nm的InGaAs作为N型接触层，选厚度为0.5um的InP作为P型接触层，不仅可以起到帽层的作用，而且可以降低光电探测器的反向暗电流，本征吸收层PIN层的厚度选择决定了探测器的响应速度和内量子效率，减小本征层宽度可以降低结区渡越时间，但各层间的超异质结的结电容会增大，导致电路RC时间的增加响应速度降低。因此本征吸收层PIN层的厚度选取是经过多步计算比较所选取的最优解。
Description
技术领域
本发明属于光电探测器领域，特别涉及一种提高响应速度的改进的变容器型光电探测器。
背景技术
近年来，作为光纤通信系统的核心器件，特别是基于InP基的In0.53Ga0.47As PIN光电探测器已被广泛使用于长波长(1100nm～1650nm)光纤通信网络。由于光纤传输系统继续向低损耗，大容量和长距离发展，因此要求长波长光电探测器具有高灵敏度和快速响应的特性。随着飞秒激光技术的发展和光信号的调制频率达到几十赫兹，高速大容量光纤通信系统和光学技术在微波系统中的应用，对高速和高灵敏度光电探测器的需求正在增加。而且人们对光纤通信的速度和容量的要求越来越高。相比于传统的电缆通信，光纤通信具有信息容量大、传播距离远、信号质量高、抗电磁干扰能力强以及成本低等优势。理论实验表明波长为1310nm以及1550nm的近红外光在光纤中传输损耗最小。
变容器型PIN光电探测器指在高掺杂的P型区和N型区之间夹有一层不掺杂或者低掺杂的I层，当入射光的能量大于I层材料带宽时，入射光就会被I层材料吸收而在I层产生电子空穴对。由于在I区本身就处在P N节的耗尽区再加上外电路的反偏，反向偏压的电场与内建电场的方向相同，这就使得在I区有很强的电场。电子和空穴在电场的作用下分别被扫入N区和P区，这样就在外电路中产生光生电流，本征层增加了光在光电探测器内的行进路程，从而提高了光子的吸收。
探测器的响应速度即我们经常说的带宽，探测器的入射光受到高频调制，这就要求器件对调制能够快速响应。因此引入了响应速度的概念，是指当交流光电流因为调制信号的频率升高，而下降到低频值1/2的频率，也叫做3dB频率。
对于高速光电探测器，关键是要同时满足设备的高速和高灵敏度特性。难以这样做是因为这两个参数与器件的耗尽层的厚度有关并且是相互限制的。光从前面或后面进入探测器的吸收层，激发价带中的电子跳跃到导带以产生光电流。但其固有的弱点也非常明显：量子效率和响应速度是相互制约的。M.Bitter等人使用MOVPE(金属有机气相外延)技术在半绝缘InP衬底上外延生长有源层。制成探测器的光敏区直径为11μm，器件在1.5V时的电容为40fF，3dB频率达到40GHz。M.Makiuchi等人。使用Ar离子蚀刻方法在基板上制作透镜。在光被透镜会聚后，它从背面入射到光敏区域。这可以减小光敏区域的面积以减小结面积并减小结电容减小电路的RC时间常数以增加带宽。该器件的结直径为20μm。当反向电压低于i0V时，结电容仅为54fF。同时，由于其本征层就足够窄，结点时间非常小，因此得到31GHz的截止频率。德国First Sensor公司的InGaAs基近红外光电探测器在5V偏压下的暗电流为1nA，对应1550nm波段的响应度为0.95A/w。在5V偏压下，上升时间为15ns，噪声等效功率为0.2pW/Hz1/2，结电容值为70pF。
现有的光电探测器外延生长技术会导致两个问题：一个是重掺杂P型欧姆接触层时使Zn大量扩散入InP晶体质量出现了问题，芯片上分布着高密度的位错；另一个就是掺杂上有问题，某一层掺杂浓度比较临界或掺杂不均匀。这两个问题均会导致InP基光电探测器的响应速度缓慢，不能将其应用于高频通讯。
发明内容
针对现有的光电探测器外延生长技术所导致的两个问题，提出一种垂直入射的InP基提高响应速度的改进的变容器型光电探测器。
一种提高响应速度的改进的变容器型光电探测器，其特征在于该器件外延结构从下往上依次生长，主要包括InP基衬底、N型接触层、光电探测器的主体PIN层以及P型接触层，光从P型面垂直入射。
本发明采用高掺杂的InP作为衬底材料，用以连接金属电极，形成欧姆接触。
本发明所述InP基衬底对结构起到力学支撑及传导电子的作用，首先要高温处理InP衬底并在上面补上一层新鲜的InP以隔离衬底的一些表面缺陷和吸附的杂质原子。
本发明所采用的InGaAs和InP材料能做到完全的晶格匹配，并且能制备出高质量的InP/InGaAs材料结构可以有效避免高密度界面态所产生对半导体器件的电学性能影响，使得电学性能稳定。
本发明所采用的N型接触层为生长厚度300nm的InGaAs材料。
本发明所使用的P型接触层为厚度0.5um的InP材料，不仅可以起到帽层的作用，而且可以降低光电探测器的反向暗电流，进一步改善器件的特性。
本发明采用MOCVD(金属有机物化学气相淀积)来生长所需的器件外延结构，MOCVD能在低温下制备出非常好的晶体质量，可控制精度高，能达到原子层级别，可以生长各种复杂结构，生长晶体速度快，反应室规模容易扩展，能实现大批量生产。
本发明采用各种形式的Zn扩散入InP来实现InP基光电二极管的重掺杂P型欧姆接触层。
长波长(1100nm～1650nm)的光耦合方式是通过对外延材料结构和器件图形的设计来实现的，本发明中变容器型PIN光电探测器所采用的是正面入射方式。正面入射结构的外延材料结构比较简单，降低了材料生长的难度，在器件工艺上对设备和工艺难度的要求较低，而且设计合理的正面入射结构也能得到很高的响应速度
根据实际对探测器响应波长的需求，通过改变器件外延生长材料和器件结构来实现光电探测器对各种波段的响应，从而增强其实用性。
附图说明
图1为本发明所设计的提高响应速度的改进的变容器型光电探测器的结构图
图2为本发明中利用COMSOL模拟的器件中载流子浓度的变化
图3为本发明中利用COMSOL模拟的器件内电势的变化
图4为本发明中最终得到的器件3DB带宽图
具体实施方式
下面结合具体实施方式对本发明作进一步详细地说明，但本发明并限于以下实施例。
实施例1
如图1所示提高响应速度的改进的变容器型光电探测器由下向上包括衬底材料掺杂Si元素的InP基(1)、掺杂浓度为1.5e18cm-3厚度为0.1μm的N型接触层(2)、PIN层(3)、掺杂浓度为3.5e18cm-3厚度为0.1μm的P型接触层(4)。
使用的衬底为2寸掺Fe的半绝缘InP衬底，生长晶面是(100)偏向<111>0度晶面。生长过程为先将衬底放入反应室，升温至400度开启PH3保护，之后升温至700度生长0.5um的InP，之后停止生长切换为As环境，生长厚度为的2.5um的InGaAs单层。
如图2所示，通过降低P型InP的生长温度，可以很好地控制InP材料和InGaAs材料的接合处的Zn浓度，并且不会扩散到本征层中，从而使得器件中载流子浓度提高。
如图3所示，在0V以及20V的反向偏置电压下，器件内部自建电动势不同。
如图4所示，本发明所设计的提高响应速度的改进的变容器型光电探测器芯片测量结果显示，反向偏压为-20V时，暗电流小于1.3nA，电容约为1.6pF，在1550nm激光的辐照下，器件的响应度可达0.96A/W以上，3DB带宽达到了10G HZ，可以应用于高频通信。
Claims (5)
1.一种提高响应速度的改进的变容器型光电探测器，其特征在于该器件外延结构从下往上依次生长，主要包括InP基衬底、N型接触层、光电探测器的主体PIN层以及P型接触层，光从P型面垂直入射。所述InP基衬底对结构起到力学支撑及传导电子的作用，InP是闪锌矿结构立方晶格结构，三元化合物InGaAs可由GaAs和InAs配比形成，其晶格常数随组分的变化可以近似为线性。
2.按照权利要求1所述的一种提高响应速度的改进的变容器型光电探测器，其特征在于选择生长厚度为300nm的InGaAs作为N型接触层，选厚度为0.5um的InP作为P型欧姆接触层，不仅可以起到帽层的作用，而且可以降低光电探测器的反向暗电流。
3.按照权利要求1所述的一种提高响应速度的改进的变容器型光电探测器，其特征在于使用AIXTRON 2800G4 5*8型MOCVD来生长材料，材料生长所用的三族MO源分别为：三甲基镓(TMGa)，三甲基铟(TMIn)，恒温槽浓度分别为5度和17度，使用的五族源为：砷烷(AsH3)和磷烷(PH3)，载气为高纯H2。
4.按照权利要求1所述的一种提高响应速度的改进的变容器型光电探测器，其特征在于InP基光电二极管的重掺杂P型欧姆接触层多数是通过各种形式的Zn扩散入InP来实现的，影响InP中Zn的掺杂浓度的主要条件是温度和Zn掺杂源的流量。
5.按照权利要求1所述的对改进的变容器型光电探测器的结构进行了细致的分析，在器件等效电路的基础上分别划分出各个层的等效电容(包括势垒电容和扩散电容)，并据此进一步分析出由于生长材料时温度过高所带来的本征层的Zn扩散现象引起了层内各个电容的变化，进而影响器件的高频特性，通过改进优化抑制了本征层的Zn扩散现象，得到了高质量的晶体材料，成功量产出InGaAs/InP PIN光电探测器，并测得器件的感光区直径为60um，反向偏压为-20V时，暗电流小于1.3nA，电容约为1.6pF，在1550nm激光的辐照下，器件的响应度可达0.96A/W以上，3DB带宽达到了10G HZ，可以应用于高频通信。
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