CN110718762B - Single-beam 1-bit super surface excited by plane wave vertical incidence - Google Patents
Single-beam 1-bit super surface excited by plane wave vertical incidence Download PDFInfo
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- CN110718762B CN110718762B CN201910874689.3A CN201910874689A CN110718762B CN 110718762 B CN110718762 B CN 110718762B CN 201910874689 A CN201910874689 A CN 201910874689A CN 110718762 B CN110718762 B CN 110718762B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q15/00—Devices for reflection, refraction, diffraction or polarisation of waves radiated from an antenna, e.g. quasi-optical devices
- H01Q15/0006—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices
- H01Q15/0086—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices said selective devices having materials with a synthesized negative refractive index, e.g. metamaterials or left-handed materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q15/00—Devices for reflection, refraction, diffraction or polarisation of waves radiated from an antenna, e.g. quasi-optical devices
- H01Q15/0006—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices
- H01Q15/0013—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices said selective devices working as frequency-selective reflecting surfaces, e.g. FSS, dichroic plates, surfaces being partly transmissive and reflective
- H01Q15/002—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices said selective devices working as frequency-selective reflecting surfaces, e.g. FSS, dichroic plates, surfaces being partly transmissive and reflective said selective devices being reconfigurable or tunable, e.g. using switches or diodes
Abstract
The invention discloses a single-beam 1-bit super surface excited by plane wave vertical incidence. The invention solves the problem that the traditional 1-bit super surface has the difficulty of symmetrical wave beams when the wave beam forming is carried out on the vertical incidence plane wave by introducing the pre-phase on each unit. In the 1-bit super surface, 1-bit units are randomly placed on two planes with different heights by using a dielectric plate with a certain thickness, so that relative pre-phase difference is realized; the 1-bit unit comprises a metal ground and a square patch loaded with a cross seam, and the four rectangular patches are connected with the square patch cut by the cross seam to realize the switching between two 1-bit states. The invention can realize single beam under the condition of plane wave incidence vertical incidence, and the introduced pre-phase does not need to be readjusted when the emergent direction is changed, and only needs to switch the state of the 1-bit unit. The invention has the advantages of broadband characteristic, reconfigurable potential, strong engineering realizability and the like.
Description
Technical Field
The invention provides a design and implementation method of a single-beam 1-bit super surface excited by plane wave vertical incidence based on a 1-bit super surface widely applied at present by utilizing a pre-phase and a broadband 1-bit unit, and belongs to the technical field of super surfaces.
Background
In order to realize the manipulation of the planar electromagnetic wave, a super surface that can control the propagation of the planar wave in a specific mode and frequency has been widely studied in recent years. The 1-bit super surface is one of the super surfaces which are important to research and focus on due to simple structure, easy design and capability of realizing reconfiguration by using fewer diodes. However, when a 1-bit super-surface with only two states is used to form a single beam for a plane wave, an even number of symmetric beams will generally appear in space due to the symmetric distribution of the phases on the super-surface. In the case of plane wave normal incidence, 1-bit super-surface single beam is difficult to achieve.
The current method for solving the difficulty is to realize the phase gradient distribution on the super surface by utilizing a 2-bit super surface of which the unit can be switched in four states, thereby inhibiting the occurrence of symmetrical beams. However, the design of the 2-bit super surface, especially the design of the reconfigurable 2-bit super surface, can greatly increase the complexity of the super surface structure design and the design of the control reconfigurable super surface circuit system.
Disclosure of Invention
The purpose of the invention is as follows: the invention aims to provide a single-beam 1-bit super surface excited by plane wave vertical incidence, which solves the difficulty that a single beam is difficult to realize when the 1-bit super surface carries out beam forming under the condition of plane wave vertical incidence.
The technical scheme is as follows: the single-beam 1-bit super surface excited by plane wave vertical incidence realizes the plane wave vertical incidence 1-bit super surface single beam by introducing the pre-phase on each unit of the 1-bit super surface. The 1-bit unit is randomly placed on two planes with different heights by using a dielectric plate with a certain thickness, and the relative pre-phase difference is realized by using the relative height difference. The height is chosen depending on the dielectric constant of the medium and the pre-phase difference that needs to be achieved. The 1-bit unit comprises a metal ground and a square patch loaded with a cross seam, the four small rectangular patches are connected with the large square patch cut by the cross seam to realize the switching between two states of 1 bit, when the square patch cut by the cross seam is not communicated, the 1-bit unit is in a state 0, and when the square patch cut by the cross seam is communicated, the 1-bit unit is in a state 1. Through the equivalent circuit model of the two states, the relative bandwidth of more than 35% can be realized under the condition of 180 +/-25 phase difference when the two states are switched. The cell can work on plane waves with normal incidence in TE and TM modes, and the cell has the potential of realizing a reconfigurable 1-bit cell.
Preferably, the super-surface comprises an upper dielectric slab, a lower dielectric slab, a plurality of square patches for loading cross seams and a metal floor, wherein the square patches are positioned on the upper dielectric slab, the square patches for loading cross seams are positioned between the upper dielectric slab and the lower dielectric slab, and the metal floor is positioned at the bottom layer; a unit metal ground is arranged between the two dielectric slabs and corresponds to the position of the square patch on the upper dielectric slab; the square patch on the upper dielectric plate and the metal ground in the middle of the two dielectric plates form a 1-bit unit on the top layer, and the square patch in the middle of the upper dielectric plate and the square patch in the middle of the lower dielectric plate and the metal ground on the bottom layer form a 1-bit unit in the middle layer.
Preferably, the height difference of the two layers of 1-bit cells is selected according to the dielectric constant of the medium and the pre-phase difference to be realized.
Preferably, the difference between the pre-phases of the upper layer cell and the lower layer cell is realized in the range of 80 ° to 100 °.
Preferably, the dielectric plate has a thickness of about 0.125 dielectric wavelengths at the center frequency, and a pre-phase difference of about 90 ° is achieved.
Preferably, the square patches cut by the cross-stitch are connected by four switching diodes (PINs) to realize a reconfigurable 1-bit cell.
Has the advantages that: the invention introduces a pre-phase based on the array synthesis principle to realize plane wave incident single beam; randomly placing the unit at two different heights, and realizing pre-phase difference by utilizing the height difference; and designing and optimizing a 1-bit unit based on a circuit model, and completing the design of the whole 1-bit super surface. Compared with the existing 1-bit super surface, the invention has the following advantages:
1) a single beam can be achieved with plane wave incidence at normal incidence. The introduced pre-phase does not need to be readjusted when the emergent direction is changed, and only the state of the 1-bit unit needs to be switched. The method for realizing the pre-phase is simple and the engineering is easy to realize.
2) The designed 1-bit unit has broadband characteristics and reconfigurable potential. The unit structure is simple, and the engineering realizability is strong.
Drawings
FIG. 1 is a schematic diagram of a conventional 1-bit super surface;
FIG. 2 is a schematic diagram of a simulation model of two states of a 1-bit cell according to the present invention; (a) is state 0, (b) is state 1;
FIG. 3 is a circuit model of two states of a 1-bit cell according to the present invention; (a) is state 0, (b) is state 1;
FIG. 4 is a graph of the simulation results of the reflection phase for two states of a 1-bit cell of the present invention;
FIG. 5 is a 3D perspective view of a 1-bit super-surface with a shaped beam exit angle of 30 of the present invention;
FIG. 6 is a top level unit distribution diagram of a 1-bit super-surface with a shaped beam exit angle of 30 according to the present invention;
FIG. 7 is a diagram of the middle layer unit distribution of a 1-bit super-surface with a beam-forming exit angle of 30 degrees in accordance with the present invention;
FIG. 8 is a bottom schematic view of a 1-bit super-surface with a shaped beam exit angle of 30 according to the present invention;
FIG. 9 is a side view of a 1-bit super-surface with a shaped beam exit angle of 30 of the present invention;
FIG. 10 is a phase profile of a 1-bit super-surface of the present invention with beamformed exit angles of 15 (a) and 0 (b);
FIG. 11 is a 1-bit super-surface representation of the present invention; (a) the (b) and (c) are super surfaces with the beam forming emergence angles of 0 degrees, 15 degrees and 30 degrees respectively;
FIG. 12 is a graph of simulated and measured normalized radar cross-section (RCS) results for a beamforming exit angle of 30 (TE mode normal incidence plane wave, xoz plane) of the present invention;
fig. 13 is a diagram of simulated and actual normalized RCS results for a beam-formed exit angle of 15 ° (TE mode normal incidence plane wave, xoz plane) of the present invention;
fig. 14 is a diagram of simulated and measured normalized RCS results for a beamforming exit angle of 0 ° (TE mode normal incidence plane wave, xoz plane);
FIG. 15 is a diagram of simulated and actual normalized RCS results for a beamforming exit angle of 30 (TM-mode normal incidence plane wave, xoz plane) of the present invention;
fig. 16 is a diagram of simulated and measured normalized RCS results for a beam-formed exit angle of 15 ° (TM mode normal incidence plane wave, xoz plane) of the present invention;
fig. 17 is a graph of simulated and measured normalized RCS results for a beamformed exit angle of 0 deg. (TM mode normal incidence plane wave, xoz plane) of the present invention.
Detailed Description
The present invention is further illustrated by the following examples, which are intended to be purely exemplary and are not intended to limit the scope of the invention, as various equivalent modifications of the invention will occur to those skilled in the art upon reading the present disclosure and fall within the scope of the appended claims.
The invention solves the problem that the traditional 1-bit super surface has the difficulty of symmetrical wave beams when the wave beam forming is carried out on the vertical incidence plane wave by introducing the pre-phase on each unit. A method is presented for achieving pre-phasing, i.e. placing the cells at two different heights. A broadband 1-bit unit is designed, and a super surface with wave beam forming in different directions is realized by using a unit for loading a pre-phase. The related concepts and structures related to the present invention are described in detail below.
Pre-phase
A simplified conventional 1-bit super surface is shown in fig. 1, with 1 being a super surface; 2 is a 1-bit cell on the super-surface, with two states, 0 and 1, representing the provision of 0 ° and 180 ° phase shifts, respectively; 3 represents a plane wave at normal incidence; and 4, a beamformed reflected wave. As shown in fig. 1, θ is the angle between the exit direction and the z-axis. For a beamformed 1-bit super-surface at the xoz plane, the phase distribution of the elements along the y-axis generally does not change. For a super-surface containing N × N units, the total phase of the array element at the s-th row and k-th column can be expressed as (row is parallel to x-axis, column is parallel to y-axis):
where k is 1,2, N, d is the adjacent cell pitch (in the present invention, d is the air wavelength at half the center frequency), and λ is the air wavelength. PhikIs the phase compensation provided by the 1-bit unit:
according to array synthesis theory, the array factor of the conventional 1-bit super surface in the xoz plane can be expressed as
Φb,ΦwIs the phase compensation provided by the 1-bit unit. For a conventional 1-bit super surface of a normal incidence plane wave, as can be readily seen from equation (2), where (Φ)b-Φw) There are only three cases, which are-pi, 0, pi, respectively. Therefore | AF1(θ) | is an even function, i.e.
Here, the
Therefore, a symmetric beam generally appears in the conventional 1-bit super surface during beamforming.
Now introduce a pre-phase Ψs,kSo that the cell reflection phase added with the pre-phase
Is composed of
Phi heres,kAnd Ψs,kRespectively representing the phase compensation and the pre-phase of the s-th row and k-th column unit, and the new array factor added with the pre-phase can be expressed as
When each unitIs in a pre-phase of 0 and
when taking the value of two values, f (θ, a, b, v, w) can be expressed as
At this time, | AF2The (theta) l can be a non-odd and non-even function, so that the single-beam beamforming can be realized by introducing two pre-phases. As can be seen from the formulas (7) to (8), the single beam forming can be realized by setting the two pre-phases with the pre-phase difference of 90 °. Experimental simulations can verify that in actual design, even if a perfect 90 ° pre-phase difference cannot be realized, a pre-phase difference near 90 ° can also realize single-beam forming. However, in order to ensure the side lobe performance of the shaped beam, it is recommended that the range of the pre-phase difference is between 80 ° and 100 °.
1 bit cell design
The front and side views of the 1-bit cell are shown in fig. 2. (a) The figure is a simulation model of state 0, providing 0 ° phase compensation, comprising a square patch 5 loaded with a cross slit with a side length of about half the medium wavelength at the center frequency; dielectric plate 7, Taconn TLY with dielectric constant 2.2 is adopted as the dielectric plate, the thickness of the dielectric is about 0.125 dielectric wavelength under the central frequency, and the thickness is selected to easily realize the pre-phase difference of about 90 degrees when the pre-phase is introduced later; a metal floor 8. (b) The figure is a simulation model of a state 1, provides 180-degree phase compensation, and comprises a square patch 6 loaded with a cross seam, wherein the side length of the square patch is the same as that of the state 0, and four small rectangular patches are used for connecting the four rectangular patches cut by the cross seam in the middle; a dielectric plate 7; a metal floor 8. The only difference between states 0 and 1 is whether there are four small rectangular patches connecting the four rectangular patches after the cross-stitch cut. If the four patches are replaced by four PINs, the reconfigurable unit is very easy to implement. The unit size can be optimized based on an equivalent circuit model and working frequency, and the optimized unit can realize 35% of 180 +/-25 phase difference bandwidth in switching states. Unit related rulerThe cun is shown in Table 1. The equivalent circuit models of the two states are shown in fig. 3, (a) the equivalent circuit model of the state 0 is shown in the figure, and (b) the equivalent circuit model of the state 1 is shown in the figure, and the circuit model can be used for assisting in optimizing the cell size. For the cell of the present invention, at the dimensions of table 1, the relevant parameters of the circuit model are: l is1＝0.11nH,L2＝0.09nH,L3＝0.33nH,C1＝14.94fF,C2＝44.65fF,C332.36 fF. The simulated reflection phase and the reflection phase calculated by the circuit model are shown in fig. 4.
TABLE 1 parameter values corresponding to the model in FIG. 2
| Parameter(s) | Numerical value (mm) | Parameter(s) | Numerical value (mm) | Parameter(s) | Numerical value (mm) |
| l1 | 3.80 | l2 | 3.15 | l3 | 0.30 |
| l4 | 0.15 | l5 | 1.03 | h | 0.762 |
Pre-phase 1-bit super surface design
The present embodiment will describe in detail the design of the super-surface with the beam forming emitted at 30 °, and the design analogy of other angles is only needed. A three-dimensional perspective view of a super-surface with beamforming exiting at 30 ° is shown in fig. 5, including: the metal ground 8 of the unit, the unit 9 distributed on the top layer, the medium plate 10, the unit 11 distributed on the middle layer, the square metal ground 12 and the positioning hole 13 for mounting the plastic screw. Fig. 6-9 provide detailed views of the super-surface, the entire super-surface comprising: positioning holes 13, cells 14 in state 0, cells 15 in state 1, metal grounds 8 of the cells, square metal ground 12, and dielectric plates 10. From the figure, the state distribution of the cells and the pre-phase applied to each cell can be derived. Firstly, randomly placing 20 × 20 cells on two planes of medium wavelength with height difference of about 0.125 center frequency to realize relative pre-phase difference of about 90 °, that is, the incident wave and the emergent wave can bring two pre-phases with relative difference to the two-layer cells through the height difference of the upper and lower two-layer cells. It will be appreciated that the pre-phasing of the top layer elements 9 is 0 deg., and the pre-phasing of the intermediate layer elements 11 is 90 deg.. Then, the phase compensation required to be provided by each unit is calculated through array synthesis theory, so that the selection of which state unit to provide the phase compensation is determined. Fig. 10 (a) and (b) show cell state distributions with exit angles of 15 ° and 0 °, respectively, with 16 representing state 0 and 17 representing state 1. The pre-phase distribution of the cells with the exit angles of the beam of 15 ° and 0 ° is the same as the distribution of the 30 ° exit. In order to achieve a relative pre-phase difference, the super-surface consists of two layers of dielectric plates 10 of the same size but different relative heights. The super-surfaced two-layer dielectric slab 10 of the present invention is separately machined and assembled together by means of plastic screws and locating holes. The super-surface object diagram is shown in fig. 11. Fig. 12-17 show the simulation results and the actual measurement results of the designed 1-bit super surface under the normal incidence plane wave.
Claims (5)
1. A single-beam 1-bit super surface excited by plane wave vertical incidence is characterized in that a dielectric slab with a certain thickness is utilized on the super surface, 1-bit units are randomly placed on two planes with different heights, and relative pre-phase difference is realized by utilizing relative height difference; the 1-bit unit comprises a metal ground and a square patch loaded with a cross seam, the four rectangular patches are connected with the square patch cut by the cross seam to realize the switching between two 1-bit states, when the square patch cut by the cross seam is not communicated, the 1-bit unit is in a state 0, and when the square patch cut by the cross seam is communicated, the 1-bit unit is in a state 1;
the super surface comprises an upper dielectric slab, a lower dielectric slab, a plurality of square patches for loading cross seams and a metal floor, wherein the square patches are positioned on the upper dielectric slab, the square patches for loading cross seams are positioned between the upper dielectric slab and the lower dielectric slab, and the metal floor is positioned at the bottom layer; a unit metal ground is arranged between the two dielectric slabs and corresponds to the position of the square patch on the upper dielectric slab; the square patch on the upper dielectric plate and the metal ground in the middle of the two dielectric plates form a 1-bit unit on the top layer, and the square patch in the middle of the upper dielectric plate and the square patch in the middle of the lower dielectric plate and the metal ground on the bottom layer form a 1-bit unit in the middle layer.
2. The single-beam 1-bit super-surface excited by plane wave normal incidence according to claim 1, wherein the height difference of two layers of 1-bit units is selected according to dielectric constant of medium and pre-phase difference to be realized.
3. The single beam 1-bit super-surface excited by plane wave normal incidence of claim 1, wherein the difference between the pre-phases of the upper and lower elements is achieved in the range of 80 ° to 100 °.
4. The single beam 1-bit super-surface excited by plane wave normal incidence according to claim 1, wherein the dielectric plate has a thickness of 0.125 dielectric wavelengths at the center frequency, and a pre-phase difference of 90 ° is achieved.
5. The single-beam 1-bit super-surface excited by plane wave normal incidence according to claim 1, wherein the square patches cut by the cross-shaped slits are connected by four PINs to realize a reconfigurable 1-bit unit.
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