CN110708035A - 温度补偿型声表面波器件的温补层上表层表面波抑制方法 - Google Patents
温度补偿型声表面波器件的温补层上表层表面波抑制方法 Download PDFInfo
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- CN110708035A CN110708035A CN201911001605.1A CN201911001605A CN110708035A CN 110708035 A CN110708035 A CN 110708035A CN 201911001605 A CN201911001605 A CN 201911001605A CN 110708035 A CN110708035 A CN 110708035A
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- temperature compensation
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- 238000010897 surface acoustic wave method Methods 0.000 title claims abstract description 50
- 238000000034 method Methods 0.000 title claims abstract description 23
- 230000001629 suppression Effects 0.000 title description 3
- 239000003292 glue Substances 0.000 claims abstract description 65
- 238000010521 absorption reaction Methods 0.000 claims abstract description 45
- 229910052751 metal Inorganic materials 0.000 claims abstract description 17
- 239000002184 metal Substances 0.000 claims abstract description 17
- 238000004519 manufacturing process Methods 0.000 claims abstract description 16
- 239000011248 coating agent Substances 0.000 claims abstract description 14
- 238000000576 coating method Methods 0.000 claims abstract description 14
- 238000004140 cleaning Methods 0.000 claims abstract description 7
- 230000000452 restraining effect Effects 0.000 claims abstract description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 12
- 238000001035 drying Methods 0.000 claims description 9
- 239000013078 crystal Substances 0.000 claims description 6
- 235000012239 silicon dioxide Nutrition 0.000 claims description 6
- 239000000377 silicon dioxide Substances 0.000 claims description 6
- 230000005540 biological transmission Effects 0.000 claims description 4
- 238000010438 heat treatment Methods 0.000 claims description 4
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 claims description 4
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical group CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 claims description 3
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 3
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- 238000009826 distribution Methods 0.000 claims description 3
- 229910052731 fluorine Inorganic materials 0.000 claims description 3
- 239000011737 fluorine Substances 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- 238000002156 mixing Methods 0.000 claims 3
- 239000002994 raw material Substances 0.000 claims 3
- -1 a) firstly Substances 0.000 claims 1
- 238000005507 spraying Methods 0.000 description 12
- 238000001312 dry etching Methods 0.000 description 9
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Images
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02818—Means for compensation or elimination of undesirable effects
- H03H9/02834—Means for compensation or elimination of undesirable effects of temperature influence
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/08—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
- H03H3/10—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves for obtaining desired frequency or temperature coefficient
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02543—Characteristics of substrate, e.g. cutting angles
- H03H9/02559—Characteristics of substrate, e.g. cutting angles of lithium niobate or lithium-tantalate substrates
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- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Abstract
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CN201911001605.1A CN110708035B (zh) | 2019-10-21 | 2019-10-21 | 温度补偿型声表面波器件的温补层上表层表面波抑制方法 |
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CN201911001605.1A CN110708035B (zh) | 2019-10-21 | 2019-10-21 | 温度补偿型声表面波器件的温补层上表层表面波抑制方法 |
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CN110708035A true CN110708035A (zh) | 2020-01-17 |
CN110708035B CN110708035B (zh) | 2022-04-01 |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111490748A (zh) * | 2020-02-28 | 2020-08-04 | 武汉大学 | 一种薄膜体声波谐振器 |
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JP2001085964A (ja) * | 1999-09-10 | 2001-03-30 | Toyo Commun Equip Co Ltd | Sawデバイスの製造方法 |
EP1518947A2 (en) * | 2003-09-26 | 2005-03-30 | Shin-Etsu Chemical Co., Ltd. | Method of producing single-polarized lithium tantalate crystal and crystal thereby obtained. |
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US20170063329A1 (en) * | 2015-08-25 | 2017-03-02 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Surface acoustic wave (saw) resonator |
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US20190212300A1 (en) * | 2016-09-26 | 2019-07-11 | The University Of Warwick | Bulk acoustic wave resonator based sensor |
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2019
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JP2001085964A (ja) * | 1999-09-10 | 2001-03-30 | Toyo Commun Equip Co Ltd | Sawデバイスの製造方法 |
CN1791988A (zh) * | 2003-07-16 | 2006-06-21 | 拜欧得股份有限公司 | 多反射声波器件 |
EP1518947A2 (en) * | 2003-09-26 | 2005-03-30 | Shin-Etsu Chemical Co., Ltd. | Method of producing single-polarized lithium tantalate crystal and crystal thereby obtained. |
EP1646144A2 (en) * | 2004-10-08 | 2006-04-12 | Alps Electric Co., Ltd. | Surface acoustic wave element and method of manufacturing the same |
JP2006246542A (ja) * | 2006-06-16 | 2006-09-14 | Kyocera Corp | 水晶振動子及びそれを搭載した水晶デバイス |
CN104242862A (zh) * | 2013-06-10 | 2014-12-24 | 太阳诱电株式会社 | 声波装置 |
CN103516328A (zh) * | 2013-10-10 | 2014-01-15 | 中国电子科技集团公司第五十五研究所 | 条阵介质膜声表面波器件 |
US20170063329A1 (en) * | 2015-08-25 | 2017-03-02 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Surface acoustic wave (saw) resonator |
US20190212300A1 (en) * | 2016-09-26 | 2019-07-11 | The University Of Warwick | Bulk acoustic wave resonator based sensor |
CN109891612A (zh) * | 2016-10-20 | 2019-06-14 | 天工方案公司 | 具有亚波长厚度的压电层的弹性波器件 |
CN108039872A (zh) * | 2017-12-26 | 2018-05-15 | 海宁市瑞宏科技有限公司 | 一种用于高性能声表面波滤波器的谐振器结构设计 |
CN108123696A (zh) * | 2018-03-07 | 2018-06-05 | 海宁市瑞宏科技有限公司 | 一种高机电耦合系数的抗功率温补型声表面波滤波器结构 |
CN108461626A (zh) * | 2018-04-28 | 2018-08-28 | 中国电子科技集团公司第二十六研究所 | 一种温度补偿型声表面波器件的温度补偿层平坦化方法 |
CN109361372A (zh) * | 2018-10-12 | 2019-02-19 | 中国电子科技集团公司第二十六研究所 | 一种温度补偿型低损耗超宽带谐振器及滤波器 |
Non-Patent Citations (5)
Title |
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DMITRY KASYANOV: "The influence of a focused acoustic field on mass-transfer processes at a heterogeneous boundary", 《PROCEEDINGS OF MEETINGS ON ACOUSTICS》 * |
ZHENGHUIQIAO 等: "Effect of temperature tuning on the aerosol acoustic aggregation process", 《JOURNAL OF ENVIRONMENTAL SCIENCES》 * |
刘晓智 等: "多层微结构声表面波温补滤波器仿真设计", 《压电与声光》 * |
窦韶旭: "基于氮化铝压电薄膜的声表面波(SAW)高温力学传感器研究", 《中国优秀博硕士学位论文全文数据库(博士)信息科技辑》 * |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111490748A (zh) * | 2020-02-28 | 2020-08-04 | 武汉大学 | 一种薄膜体声波谐振器 |
CN111490748B (zh) * | 2020-02-28 | 2024-06-04 | 武汉敏声新技术有限公司 | 一种薄膜体声波谐振器 |
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Effective date of registration: 20220524 Address after: No.23 Xiyong Avenue, Shapingba District, Chongqing 401332 Patentee after: CHINA ELECTRONICS TECHNOLOGY GROUP CORPORATION CHONGQING ACOUSTIC-OPTIC-ELECTRONIC CO.,LTD. Address before: 400060 Chongqing Nanping Nan'an District No. 14 Huayuan Road Patentee before: CHINA ELECTRONICS TECHNOLOGY GROUP CORPORATION NO.26 Research Institute |
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Address after: No.23 Xiyong Avenue, Shapingba District, Chongqing 401332 Patentee after: CETC Chip Technology (Group) Co.,Ltd. Country or region after: China Address before: No.23 Xiyong Avenue, Shapingba District, Chongqing 401332 Patentee before: CHINA ELECTRONICS TECHNOLOGY GROUP CORPORATION CHONGQING ACOUSTIC-OPTIC-ELECTRONIC CO.,LTD. Country or region before: China |