CN110706652A - 一种公共阳极微显示像素驱动电路及驱动方法 - Google Patents
一种公共阳极微显示像素驱动电路及驱动方法 Download PDFInfo
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Abstract
一种公共阳极微显示像素驱动电路及驱动方法,其特征是所述的驱动电路包括驱动管MP5、开关管MN5、开关管MP6、开关管MN6、存储电容C2。当V_TIME=N时,场同步信号变为高电平后,在一场时间内平均产生N个V_TIME高脉冲,一个脉冲宽度为一行时间,V_TIME脉冲为高电平时间内MN6导通,B点电压等于GND电压,MP5关断,V_TIME脉冲变为低电平后,B点电压等于VCOM电压,MP5产生的电流流过OLED,OLED开始发光。通过V_TIME脉冲控制发光时间实现亮度调节。本发明的像素电路可以在不影响OLED发光特性的情况下,可以实现N级别的调亮范围。
Description
技术领域
本发明涉及一种微电子及显示技术领域,尤其是一种用于公共阳极硅基微显示驱动电路,具体地说是一种公共阳极微显示像素驱动电路及驱动方法。
背景技术
微显示技术是新兴的显示技术,它实现了显示技术与硅基集成电路技术的结合。其显示技术经历了CRT 微显示器、LCD 微显示器、硅基液晶(LCoS)微显示器、硅基有机发光二极管(OLED-on-Silicon)微显示器、Micro-LED 微显示器等。人们对显示质量的要求越来越高。其中像素电路直接驱动OLED、LED发光。传统的扫描成像采用模拟驱动的方法通过控制电压大小来调节像素的灰度和亮度,难以达到高精度的调亮范围。这种方法不能以合适的均匀性来获得较宽动态范围的调光。本发明一种公共阳极微显示像素驱动电路以及驱动方法。通过精确且均匀的控制发光时间,可以得到较宽的线性调亮范围。
发明内容
本发明的目的针对现有的微显示精度难以提高的问题,设计一种以硅基微显示驱动电路为基础的公共阳极微显示像素驱动电路及驱动方法。通过PFM(Pulse FrequencyModulation)模式精确且均匀的控制发光时间,可以使微显示器在整个调亮范围内维持灰阶和色度的一致性。
本发明目技术方案之一是:
一种公共阳极微显示像素驱动电路,它包括N型MOS管MN5、N型MOS管MN6电容C2、P型MOS管MP5、OLED和P型MOS管MP6,其特征是所述的N型MOS管MN5的漏极与输入电压源Vdata正向端相连,N型MOS管MN5的源极与电容C2的一端、P型MOS管MP5的栅极相连,N型MOS管MN5的栅极与外接控制信号SEL1相连,电压源Vdata负向端与地GND相连。P型MOS管MP5的源极与OLED阴极相连,P型MOS管MP5的漏极与GND相连;OLED阳极与P型MOS管MP6的漏极、N型MOS管MN6的漏极相连于B点,P型MOS管MP6的源极与VCOM相连,P型MOS管MP6的栅极、N型MOS管MN6的栅极与V_TIME相连,N型MOS管MN6的源极与GND相连。
本发明目技术方案之二是:
一种公共阳极微显示像素驱动电路,其特征是它主要由像素电路、外接电压源Vdata、外接OLED构成,所述的像素电路包括N型MOS管MN1、N型MOS管MN2、电容C1、P型MOS管MP1和P型MOS管MP2,N型MOS管MN1的漏极与输入电压源Vdata正向端相连,N型MOS管MN1的源极与电容C1的一端、P型MOS管MP1的栅极相连,N型MOS管MN1的栅极与外接控制信号SEL相连,电压源Vdata负向端与地GND相连,P型MOS管MP1的源极与OLED阴极相连,OLED阳极与VCOM电压相连;P型MOS管MP1的漏极与P型MOS管MP2的漏极、N型MOS管MN2的漏极相连于A点,P型MOS管MP2的源极与VDD相连,P型MOS管MP2的栅极、N型MOS管MN2的栅极与V_TIME相连,N型MOS管MN2的源极与GND相连。
本发明目技术方案之三是:
一种公共阳极微显示像素驱动方法,其特征是:采用PFM控制方式,当V_TIME=N时,场同步信号变为高电平后,在一场时间内平均产生N个V_TIME高脉冲,一个脉冲宽度为一行时间,V_TIME脉冲为高电平时间内MN6导通,B点电压等于GND电压,MP5关断,V_TIME脉冲变为低电平后,B点电压等于VCOM电压,MP5产生的电流流过OLED,OLED开始发光;如此循环,OLED从熄灭到发光再到发光到熄灭,这样就实现了OLED器件发光时间的精确控制,在脉冲宽度固定的情况下,通过调整脉冲频率实现对OLED发光的亮度的精确调节。
本发明的微显示像素驱动电路包括驱动管、开关管、存储电容。VPLUSE信号分为N级,对公共阳极电压VCOM或电源电压VDD进行调节。通过精确且均匀的控制发光时间,可以实现N级别的调亮范围。
本发明的优点及显著效果:
1.本发明新型像素驱动电路采用精确且均匀的脉冲数对公共阳极电压进行调节实现调亮,可以实现N级调亮范围。
2.V_TIME调制的脉冲数在一帧时间内平均分布,可以在一帧时间内一起调制所有像素,频率较高,消除了公共阳极微显示器在传统恒定频率(一般为帧频)PWM调亮时的屏闪问题。
3.本发明采用两个开关管实现调亮,结构简单,能够节省面积、可调范围大。
附图说明
图1是本发明像素驱动电路之一。
图2是图1驱动电路的调亮时序图。
图3是本发明的像素驱动电路之二。
具体实施方式
下面结合附图和具体实施例对本发明进行详细说明。
实施例一。
如图1所示。
一种公共阳极微显示像素驱动电路,N型MOS管MN5的漏极与输入电压源Vdata正向端相连,N型MOS管MN5的源极与电容C2的一端、P型MOS管MP5的栅极相连。N型MOS管MN5的栅极与外接控制信号SEL1相连。电压源Vdata负向端与地GND相连。P型MOS管MP5的源极与OLED阴极相连,P型MOS管MP5的漏极与GND相连。OLED阳极与P型MOS管MP6的漏极、N型MOS管MN6的漏极相连于B点。P型MOS管MP6的源极与VCOM相连,P型MOS管MP6的栅极、N型MOS管MN6的栅极与V_TIME相连,N型MOS管MN6的源极与GND相连。
本实施例的工作过程为:
行选控制信号SEL1为高电平时,开关管MN5导通,驱动信号数据电压Vdata写入存储电容C2中,驱动管MP5导通,V_TIME信号分为N级,当V_TIME=1时,场同步信号VS变为高电平后,V_TIME在VS信号中间位置产生一个高脉冲,脉冲宽度为一行时间,高脉冲一行时间内MN6导通,B点电压等于GND电压,MP5关断。V_TIME脉冲变为低电平后,MP6导通,B点电压等于VCOM电压,MP5产生的电流流过OLED,OLED开始发光。当V_TIME=N时,场同步信号变为高电平后,在一场时间内平均产生N个V_TIME高脉冲,一个脉冲宽度为一行时间,V_TIME脉冲为高电平时间内MN6导通,B点电压等于GND电压,MP5关断,V_TIME脉冲变为低电平后,B点电压等于VCOM电压,MP5产生的电流流过OLED,OLED开始发光。如此循环,OLED从熄灭到发光再到发光到熄灭,这样就实现了OLED器件发光时间的精确控制,通过控制发光时间实现了OLED发光的亮度调节。
在一帧时间内,当V_TIME从0到N变化时,则OLED阴极电压不变,流过OLED的电流不会变化,N的变化只是影响了OLED流过恒定电流的时间。恒定电流不变,OLED的发光特性就不会变化。本发明的像素电路可以在不影响OLED发光特性的情况下,可以实现N级别的调亮范围。而且V_TIME脉冲宽度固定,脉冲频率较高,且在一帧时间内平均分布,可以在一帧时间内连续调制每个像素,消除了显示器用传统低频PWM方式调亮时的闪烁问题。
实施例二。
如图3。
一种公共阳极微显示像素驱动电路,由虚线框2内的具体像素电路、外接电压源Vdata、外接OLED构成。N型MOS管MN1的漏极与输入电压源Vdata正向端相连,N型MOS管MN1的源极与电容C1的一端、P型MOS管MP1的栅极相连。N型MOS管MN1的栅极与外接控制信号SEL相连。电压源Vdata负向端与地GND相连。P型MOS管MP1的源极与OLED阴极相连,OLED阳极与VCOM电压相连。P型MOS管MP1的漏极与P型MOS管MP2的漏极、N型MOS管MN2的漏极相连于A点。P型MOS管MP2的源极与VDD相连,P型MOS管MP2的栅极、N型MOS管MN2的栅极与V_TIME相连,N型MOS管MN2的源极与GND相连。
本实施例的工作过程为:
行选控制信号SEL为高电平时,开关管MN1导通,驱动信号数据电压Vdata写入存储电容C1中,驱动管MP1导通,V_TIME信号分为N级,当V_TIME=1时,场同步信号VS变为高电平后,V_TIME在VS中间产生一个高脉冲,脉冲宽度为一行时间,一行时间内MN2导通,A点电压等于GND电压,MP1导通,MP1产生的电流流过OLED,V_TIME脉冲变为低电平后,A点电压等于VDD电压,MP1关断,不再有电流流过OLED。当V_TIME=N时,场同步信号变为高电平后,在一场时间内平均产生N个V_TIME高脉冲,一个脉冲宽度为一行时间,V_TIME脉冲为高电平时间内MN2导通,A点电压等于GND电压,MP1导通,MP1产生的电流流过OLED,V_TIME脉冲变为低电平后,A点电压等于VDD电压,流过OLED的电流也随之清零,OLED从发光到熄灭,这样就实现了OLED器件发光时间的精确控制。在脉冲宽度固定的情况下,通过调整脉冲频率实现对OLED发光的亮度的精确调节。
本发明不局限于上述实施方式,不论V_TIME信号其实现形式作任何变化,凡是采用V_TIME脉冲个数来控制公共阳极像素OLED的VCOM或VDD电压,实现了亮度调节的结构,均应落在本发明保护范围之内。
实施例三。
一种公共阳极微显示像素驱动方法,采用PFM控制方式,当V_TIME=N时,场同步信号变为高电平后,在一场时间内平均产生N个V_TIME高脉冲,一个脉冲宽度为一行时间,V_TIME脉冲为高电平时间内MN6导通,B点电压等于GND电压,MP5关断,V_TIME脉冲变为低电平后,B点电压等于VCOM电压,MP5产生的电流流过OLED,OLED开始发光;如此循环,OLED从熄灭到发光再到发光到熄灭,这样就实现了OLED器件发光时间的精确控制,在脉冲宽度固定的情况下,通过调整脉冲频率实现对OLED发光的亮度的精确调节。VPLUSE信号分为N级,对公共阳极电压VCOM或电源电压VDD进行调节。通过精确且均匀的控制发光时间,可以实现N级别的调亮范围。
本发明未涉及部分与现有技术相同或可采用现有技术加以实现。
Claims (3)
1.一种公共阳极微显示像素驱动电路,它包括N型MOS管MN5、N型MOS管MN6电容C2、P型MOS管MP5、OLED和P型MOS管MP6,其特征是所述的N型MOS管MN5的漏极与输入电压源Vdata正向端相连,N型MOS管MN5的源极与电容C2的一端、P型MOS管MP5的栅极相连,N型MOS管MN5的栅极与外接控制信号SEL1相连,电压源Vdata负向端与地GND相连。P型MOS管MP5的源极与OLED阴极相连,P型MOS管MP5的漏极与GND相连;OLED阳极与P型MOS管MP6的漏极、N型MOS管MN6的漏极相连于B点,P型MOS管MP6的源极与VCOM相连,P型MOS管MP6的栅极、N型MOS管MN6的栅极与V_TIME相连,N型MOS管MN6的源极与GND相连。
2.一种公共阳极微显示像素驱动电路,其特征是它主要由像素电路、外接电压源Vdata、外接OLED构成,所述的像素电路包括N型MOS管MN1、N型MOS管MN2、电容C1、P型MOS管MP1和P型MOS管MP2,N型MOS管MN1的漏极与输入电压源Vdata正向端相连,N型MOS管MN1的源极与电容C1的一端、P型MOS管MP1的栅极相连,N型MOS管MN1的栅极与外接控制信号SEL相连,电压源Vdata负向端与地GND相连,P型MOS管MP1的源极与OLED阴极相连,OLED阳极与VCOM电压相连;P型MOS管MP1的漏极与P型MOS管MP2的漏极、N型MOS管MN2的漏极相连于A点,P型MOS管MP2的源极与VDD相连,P型MOS管MP2的栅极、N型MOS管MN2的栅极与V_TIME相连,N型MOS管MN2的源极与GND相连。
3.一种基于权利要求1或2所述的像素驱动电路的公共阳极微显示像素驱动方法,其特征是:采用PFM控制方式,当V_TIME=N时,场同步信号变为高电平后,在一场时间内平均产生N个V_TIME高脉冲,一个脉冲宽度为一行时间,V_TIME脉冲为高电平时间内MN6导通,B点电压等于GND电压,MP5关断,V_TIME脉冲变为低电平后,B点电压等于VCOM电压,MP5产生的电流流过OLED,OLED开始发光;如此循环,OLED从熄灭到发光再到发光到熄灭,这样就实现了OLED器件发光时间的精确控制,在脉冲宽度固定的情况下,通过调整脉冲频率实现对OLED发光的亮度的精确调节。
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