CN110690337A - Flash light structure and electronic equipment - Google Patents

Flash light structure and electronic equipment Download PDF

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Publication number
CN110690337A
CN110690337A CN201910932500.1A CN201910932500A CN110690337A CN 110690337 A CN110690337 A CN 110690337A CN 201910932500 A CN201910932500 A CN 201910932500A CN 110690337 A CN110690337 A CN 110690337A
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China
Prior art keywords
flash lamp
flash
chip
face
metal layer
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CN201910932500.1A
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Chinese (zh)
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CN110690337B (en
Inventor
张琼文
邱志平
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Vivo Mobile Communication Co Ltd
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Vivo Mobile Communication Co Ltd
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Priority to CN201910932500.1A priority Critical patent/CN110690337B/en
Publication of CN110690337A publication Critical patent/CN110690337A/en
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58Optical field-shaping elements
    • H01L33/60Reflective elements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/562Protection against mechanical damage
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/58Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/60Protection against electrostatic charges or discharges, e.g. Faraday shields

Abstract

The invention provides a flash lamp structure and electronic equipment, and solves the problem that the light leakage phenomenon is easy to occur in the existing chip-scale packaged flash lamp structure, so that the light efficiency of the flash lamp is influenced. The flash structure of the present invention includes: the flashlight chip comprises a first end face, a second end face and a side face arranged between the first end face and the second end face; the metal layer is arranged on the side surface of the flash lamp chip in a surrounding mode; the insulating layer is arranged between the flash lamp chip and the metal layer. According to the embodiment of the invention, the metal layer is arranged on the side surface of the flash lamp in an enclosing manner, so that light leakage of the flash lamp structure can be effectively prevented, the lighting effect is improved, and the metal layer can improve the mechanical stress resistance and the antistatic capability of the flash lamp structure.

Description

Flash light structure and electronic equipment
Technical Field
The invention relates to the technical field of electronics, in particular to a flash lamp structure and electronic equipment.
Background
In the present flash lamp of Chip Scale Package (CSP), in order to ensure that the light emitted from the flash lamp Chip is emitted only from the front surface, the loss of the light emitted from the periphery is reducedOtherwise, titanium dioxide TiO is arranged around the flash lamp chip2The ceramic material is used for blocking the light emitted by the flash lamp chip to the periphery and reflecting the light to the front side to be emitted, so that the effect of an enclosing wall is achieved, and the lighting effect is improved.
But due to TiO2The ceramic material is brittle, so TiO is often caused when a production line is used for mounting a flash lamp2The wall is damaged, the phenomenon of light leakage is generated, and the lighting effect of the flash lamp is influenced; in addition, due to TiO2The enclosing wall structure is generally combined with the chip through glue, and the binding force is weaker, so that the TiO2 enclosing wall is easy to fall off during production line production, the light leakage phenomenon is generated, and the lighting effect of the flash lamp is influenced.
Disclosure of Invention
The invention aims to provide a flash lamp structure and electronic equipment, and aims to solve the problem that the light leakage phenomenon is easy to occur in the existing chip-scale packaged flash lamp structure, so that the light efficiency of the flash lamp is influenced.
In order to solve the technical problem, the invention is realized as follows:
in a first aspect, an embodiment of the present invention provides a flash structure, including:
the flashlight chip comprises a first end face, a second end face and a side face arranged between the first end face and the second end face;
the metal layer is arranged on the side surface of the flash lamp chip in a surrounding mode;
the insulating layer is arranged between the flash lamp chip and the metal layer.
In a second aspect, the embodiment of the present invention further provides an electronic device, which is characterized by including the flash lamp structure as described above.
The embodiment of the invention has the following beneficial effects:
according to the technical scheme of the embodiment of the invention, the metal layer is arranged on the side surface of the flash lamp in an enclosing manner, so that light leakage of the flash lamp structure can be effectively prevented, the lighting effect is improved, and the metal layer can improve the mechanical stress resistance and the antistatic property of the flash lamp structure.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings needed to be used in the description of the embodiments of the present invention will be briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art that other drawings can be obtained according to these drawings without inventive exercise.
FIG. 1 is a first structural schematic diagram of a flash lamp structure according to an embodiment of the invention;
FIG. 2 is a schematic diagram of light reflection in a flash lamp structure according to an embodiment of the present invention;
FIG. 3 is a schematic diagram of the connection between the flash structure and the PCB according to the embodiment of the invention;
fig. 4 is an equivalent circuit diagram of the flash structure and the ground of the PCB according to the embodiment of the invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, not all, embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
An embodiment of the present invention provides a flash lamp structure, as shown in fig. 1, including:
the flash lamp chip comprises a first end face, a second end face and a side face arranged between the first end face and the second end face. The flash chip includes a light emitting cell 10 and a substrate 20. The first end surface may be specifically an upper surface of the flash chip, and the second end surface may be specifically a lower surface of the flash chip.
And the metal layer 30 is arranged on the side surface of the flash lamp chip in a surrounding mode.
The metal layer may be embodied as a metal ion layer, such as silver ions. And the metal layer is combined with the flash lamp chip by adopting a chemical mode of depositing ions, and the combination mode is firmer, so that the flash lamp cannot be damaged when the flash lamp is pasted.
The light emitted by the light-emitting unit is ensured to be emitted out of the first end face of the flash lamp chip after passing through the substrate through the light reflecting effect of the metal layer.
An insulating layer 40, the insulating layer 40 being disposed between the flash chip and the metal layer 30.
According to the flashlight structure provided by the embodiment of the invention, the metal layer is arranged on the side surface of the flashlight in an enclosing manner, so that light leakage of the flashlight structure can be effectively prevented, the lighting effect is improved, and the metal layer can improve the mechanical stress resistance and the antistatic capability of the flashlight structure.
Further, as shown in fig. 1, the flash chip includes:
a light emitting unit 10; the light emitting unit 10 is for emitting blue light.
A substrate 20, a first surface of the substrate 20 being connected to a first surface of the light emitting unit 10; that is, the substrate 20 is disposed on the surface of the light emitting unit 10.
Wherein the second surface of the substrate 20 is a first end surface of the flash chip, and the second surface of the light emitting unit 10 is a second end surface of the flash chip. The substrate 20 may be a sapphire substrate, and is used for growing the light emitting unit, and light emitted by the light emitting unit can pass through the substrate to emit to all directions, and then is shielded by the metal layer, so that the light emitted by the light emitting unit can be emitted only from the first end face of the flash lamp chip.
In addition, as shown in fig. 2, since metal has a better light reflection effect than ceramic material, light emitted by the light emitting unit can be reflected by the metal layer, so that light loss is effectively reduced, and light efficiency is effectively improved.
Further, the thickness of the insulating layer 40 is greater than or equal to the thickness of the light emitting unit 10. That is, the overall layer height of the insulating layer 40 is greater than or equal to the overall layer height of the light emitting cells.
Since the light emitting unit 10 can be electrically transmitted, the side surface of the light emitting unit may leak electricity, and thus, the present inventionIn the embodiment of the invention, an insulating layer, such as SiO, is deposited between the light emitting cell 10 and the metal layer 302The insulating layer, and through setting up the thickness of insulating layer to be more than or equal to the thickness of luminescence unit, can effectively prevent the luminescence unit electric leakage.
Further, as shown in fig. 1, in the flash lamp structure according to the embodiment of the present invention, the flash lamp chip further includes:
and a pad 50, wherein the pad 50 is disposed on the second surface of the light emitting unit 10.
In an embodiment of the present invention, a predetermined number, for example, two pads, may be disposed on the second surface of the light emitting unit, so that the connection of the flash lamp structure and the PCB is achieved through the pads.
Further, as shown in fig. 3, the pad is connected to the ground of the printed circuit board 60 of the electronic device.
Optionally, the pad is connected to the ground of the PCB by solder.
In the embodiment of the invention, when the flash lamp is mounted, the metal layer is connected with the ground GND of the PCB through the soldering tin, a static protection circuit can be generated, an equivalent circuit diagram is shown in fig. 4, wherein the flash lamp chip is equivalent to a diode, and because the metal layer is directly connected with the GND, the impedance between the metal layer and the GND is very low, so that when static electricity is generated, the metal layer is preferentially discharged from the metal layer and the GND, thereby protecting the flash lamp chip.
In addition, because the metal ion layer of the embodiment of the invention is generally about 5um, and the thickness of the ceramic material in the prior art is generally about 150um, the size of the flash lamp can be effectively reduced, so that the flash lamp is easier to mount.
According to the flashlight structure provided by the embodiment of the invention, the metal layer is arranged on the side surface of the flashlight in an enclosing manner, so that light leakage of the flashlight structure can be effectively prevented, the lighting effect is improved, the mechanical stress resistance and the antistatic capability of the flashlight structure can be improved by the metal layer, and the size of the flashlight is reduced.
Embodiments of the present invention also provide an electronic device including the flash structure as described above.
Further, the electronic device further includes: the PCB is connected with the flash lamp structure.
The electronic device can realize all the implementation manners in the flash lamp structure embodiment, and can achieve the same technical effect, which is not described herein again.
The electronic equipment comprises a mobile terminal which is composed of a radio frequency unit, a network module, an audio output unit, an input unit, a sensor, a display unit, a user input unit, an interface unit, a memory, a processor, a power supply and the like.
The electronic device in the embodiment of the invention may be a mobile phone, a tablet computer, a personal digital assistant, a vehicle-mounted computer, a music player, a portable computer or a navigator.
The embodiments in the present specification are described in a progressive manner, each embodiment focuses on differences from other embodiments, and the same and similar parts among the embodiments are referred to each other.
While preferred embodiments of the present invention have been described, additional variations and modifications of these embodiments may occur to those skilled in the art once they learn of the basic inventive concepts. Therefore, it is intended that the appended claims be interpreted as including preferred embodiments and all such alterations and modifications as fall within the scope of the embodiments of the invention.
Finally, it should also be noted that, herein, relational terms such as first and second, and the like may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or terminal that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or terminal. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of other like elements in a process, method, article, or terminal that comprises the element.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, and any modifications, equivalents, improvements and the like that fall within the spirit and principle of the present invention are intended to be included therein.

Claims (10)

1. A flash structure, comprising:
the flashlight chip comprises a first end face, a second end face and a side face arranged between the first end face and the second end face;
the metal layer (30) is arranged on the side face of the flash lamp chip in a surrounding mode;
an insulating layer (40), the insulating layer (40) disposed between the flash chip and the metal layer (30).
2. The flash structure of claim 1, wherein the flash chip comprises:
a light emitting unit (10);
a substrate (20), a first surface of the substrate (20) being connected with a first surface of the light emitting unit (10);
wherein the second surface of the substrate (20) is a first end surface of the flash chip, and the second surface of the light-emitting unit (10) is a second end surface of the flash chip.
3. The flash structure according to claim 2, wherein the thickness of the insulating layer (40) is greater than or equal to the thickness of the light emitting cell (10).
4. The flash structure of claim 2, wherein the flash chip further comprises:
a pad (50), the pad (50) being disposed on a second surface of the light emitting unit (10).
5. Flash lamp structure according to claim 4, characterized in that the pad (50) is connected to the ground of a printed circuit board PCB of the electronic device.
6. Flash lamp structure according to claim 5, characterized in that the pad (50) is connected with the ground of the PCB by solder.
7. A flash lamp structure according to claim 1, wherein the metal layer (30) is a silver ion layer.
8. The flash lamp structure of claim 1 wherein the material of the insulating layer (40) is silicon dioxide, SiO 2.
9. An electronic device comprising the flash structure of any one of claims 1 to 8.
10. The electronic device of claim 9, further comprising: the PCB is connected with the flash lamp structure.
CN201910932500.1A 2019-09-29 2019-09-29 Flash light structure and electronic equipment Active CN110690337B (en)

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Application Number Priority Date Filing Date Title
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Application Number Priority Date Filing Date Title
CN201910932500.1A CN110690337B (en) 2019-09-29 2019-09-29 Flash light structure and electronic equipment

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CN110690337A true CN110690337A (en) 2020-01-14
CN110690337B CN110690337B (en) 2021-07-09

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Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101255971A (en) * 2008-04-07 2008-09-03 友达光电股份有限公司 Lampshade structure and backlight module
CN101378103A (en) * 2007-08-28 2009-03-04 富士迈半导体精密工业(上海)有限公司 White light light-emitting device and manufacturing method thereof
US20130188381A1 (en) * 2012-01-23 2013-07-25 Stanley Electric Co., Ltd. Semiconductor light-emitting device, manufacturing method for the same and vehicle headlight
CN203218312U (en) * 2011-09-20 2013-09-25 昭和电工株式会社 Light emitting diode
CN104201114A (en) * 2014-08-26 2014-12-10 江阴长电先进封装有限公司 Packaging method and packaging structure of chip with sidewall in insulating protection
CN204678257U (en) * 2015-06-01 2015-09-30 东莞市钜欣电子有限公司 The flashlight lens producing light leak can be avoided
CN207425927U (en) * 2018-01-15 2018-05-29 襄阳市产品质量监督检验所 Anticreep casing of lithium ion battery
JP2018120923A (en) * 2017-01-24 2018-08-02 日亜化学工業株式会社 Light-emitting device and method for manufacturing the same
CN109873937A (en) * 2019-01-15 2019-06-11 中国电力科学研究院有限公司 Prevent the handheld terminal of camera flash light leakage
CN110249437A (en) * 2018-01-10 2019-09-17 首尔半导体株式会社 Light emitting device
CN209418534U (en) * 2018-12-29 2019-09-20 佛山市国星半导体技术有限公司 A kind of high brightness side plating flip LED chips

Patent Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101378103A (en) * 2007-08-28 2009-03-04 富士迈半导体精密工业(上海)有限公司 White light light-emitting device and manufacturing method thereof
CN101255971A (en) * 2008-04-07 2008-09-03 友达光电股份有限公司 Lampshade structure and backlight module
CN203218312U (en) * 2011-09-20 2013-09-25 昭和电工株式会社 Light emitting diode
US20130188381A1 (en) * 2012-01-23 2013-07-25 Stanley Electric Co., Ltd. Semiconductor light-emitting device, manufacturing method for the same and vehicle headlight
CN104201114A (en) * 2014-08-26 2014-12-10 江阴长电先进封装有限公司 Packaging method and packaging structure of chip with sidewall in insulating protection
CN204678257U (en) * 2015-06-01 2015-09-30 东莞市钜欣电子有限公司 The flashlight lens producing light leak can be avoided
JP2018120923A (en) * 2017-01-24 2018-08-02 日亜化学工業株式会社 Light-emitting device and method for manufacturing the same
CN110249437A (en) * 2018-01-10 2019-09-17 首尔半导体株式会社 Light emitting device
CN207425927U (en) * 2018-01-15 2018-05-29 襄阳市产品质量监督检验所 Anticreep casing of lithium ion battery
CN209418534U (en) * 2018-12-29 2019-09-20 佛山市国星半导体技术有限公司 A kind of high brightness side plating flip LED chips
CN109873937A (en) * 2019-01-15 2019-06-11 中国电力科学研究院有限公司 Prevent the handheld terminal of camera flash light leakage

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