CN110690113A - Wafer warping degree adjusting method and equipment - Google Patents
Wafer warping degree adjusting method and equipment Download PDFInfo
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- CN110690113A CN110690113A CN201910862021.7A CN201910862021A CN110690113A CN 110690113 A CN110690113 A CN 110690113A CN 201910862021 A CN201910862021 A CN 201910862021A CN 110690113 A CN110690113 A CN 110690113A
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- 238000000034 method Methods 0.000 title claims abstract description 65
- 238000012545 processing Methods 0.000 claims abstract description 121
- 239000010408 film Substances 0.000 claims abstract description 80
- 239000010409 thin film Substances 0.000 claims abstract description 26
- 238000000151 deposition Methods 0.000 claims abstract description 16
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 29
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 29
- 238000005137 deposition process Methods 0.000 claims description 16
- 238000005468 ion implantation Methods 0.000 claims description 11
- 239000004065 semiconductor Substances 0.000 claims description 10
- 230000000903 blocking effect Effects 0.000 claims description 5
- 238000009832 plasma treatment Methods 0.000 claims description 4
- 238000004519 manufacturing process Methods 0.000 abstract description 7
- 235000012431 wafers Nutrition 0.000 description 149
- 238000010586 diagram Methods 0.000 description 10
- 230000008021 deposition Effects 0.000 description 6
- 238000000427 thin-film deposition Methods 0.000 description 5
- 238000000059 patterning Methods 0.000 description 4
- 238000009826 distribution Methods 0.000 description 3
- 238000003491 array Methods 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 229910007991 Si-N Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910006294 Si—N Inorganic materials 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/3115—Doping the insulating layers
- H01L21/31155—Doping the insulating layers by ion implantation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
- H01L21/67213—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process comprising at least one ion or electron beam chamber
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Abstract
The invention provides a method and equipment for adjusting wafer warping degree, wherein the method for adjusting the wafer warping degree comprises the following steps: providing a wafer, wherein the wafer is provided with a first surface and a second surface which are oppositely arranged; depositing a thin film on the first surface or the second surface of the wafer; and dividing the film into a processing area and a non-processing area, and performing warping degree adjustment processing on the processing area. According to the invention, after the film is deposited, warping degree adjustment treatment is carried out on part of the film, so that anisotropic warping presented by the wafer is adjusted, the surface of the wafer is kept flat, and the process stability and the product yield of the manufacturing process are ensured.
Description
Technical Field
The invention relates to the technical field of semiconductor manufacturing, in particular to a method and equipment for adjusting wafer warping degree.
Background
In the manufacturing process of semiconductor wafers, wafer warpage is a critical parameter that affects the stability of the manufacturing process and the yield of the product. After different processes such as etching or film deposition, the wafer may be warped to different degrees. In the current mainstream semiconductor process, the wafer warpage is generally monitored after a focused process station, and the wafer warpage is adjusted at a subsequent specific process station, so that the wafer surface can be kept flat.
At present, in a process station capable of adjusting wafer warpage, a film deposition process can uniformly and controllably adjust the warpage in the whole wafer plane through stress generated by depositing a film. For example, when the wafer is warped like a bowl, the front surface is concave, and the back surface is convex, so that when a silicon nitride film is deposited on the back surface of the wafer, the warpage of the wafer can be adjusted by the film deposition, and the wafer is enabled to be flat. Since the film deposition uniformly covers the whole wafer surface, the adjustment of the warping degree has no directionality.
However, after some patterning processes, the influence on the wafer warpage is anisotropic, and different warpage is exhibited in the wafer plane along the X direction and the Y direction perpendicular thereto. For example, the wafer may warp in a manner that approximates a saddle shape. At this time, the warpage adjustment by thin film deposition cannot ensure the complete flatness recovery of the wafer.
Therefore, it is necessary to provide a new method and apparatus for adjusting wafer warpage to solve the above problems.
Disclosure of Invention
In view of the above-mentioned drawbacks of the prior art, an object of the present invention is to provide a method and an apparatus for adjusting warpage of a wafer, which are used to solve the problem in the prior art that the film deposition cannot completely adjust the in-plane anisotropic warpage of the wafer.
To achieve the above and other related objects, the present invention provides a method for adjusting warpage of a wafer, comprising:
providing a wafer, wherein the wafer is provided with a first surface and a second surface which are oppositely arranged;
depositing a thin film on the first surface or the second surface of the wafer;
and dividing the film into a processing area and a non-processing area, and performing warping degree adjustment processing on the processing area.
As an alternative of the present invention, the warp adjustment treatment includes ultraviolet irradiation, ion implantation, or plasma treatment.
As an alternative of the present invention, the warp adjustment process includes:
providing a mask with an opening pattern, wherein the shape and the size of the opening pattern correspond to the processing area;
and using the mask as a shielding object to perform warping degree adjustment processing on the processing area.
As an alternative of the present invention, the plurality of treatment regions may be arranged in a two-dimensional array in a horizontal plane parallel to the first surface or the second surface, the two-dimensional array having a first arrangement direction and a second arrangement direction which are orthogonal to each other and located in the horizontal plane, and an arrangement density of the treatment regions in the first arrangement direction may be larger than an arrangement density of the treatment regions in the second arrangement direction.
As an alternative of the present invention, the wafer warpage adjusting method includes a plurality of deposition processes and warpage adjusting processes of the thin films, which are sequentially performed and correspond one to one, and the warpage adjusting process is performed after each deposition process of the thin films.
As an alternative of the present invention, the wafer includes a wafer on which a semiconductor device structure has been formed on the first surface or the second surface, the film includes a silicon nitride film, and the film and the semiconductor device structure are formed on different surfaces of the wafer respectively.
The invention also provides a wafer warping degree adjusting device, which is characterized in that: the method comprises the following steps:
the thin film growth module is used for depositing a thin film on the surface of a wafer, the wafer is provided with a first surface and a second surface which are oppositely arranged, and the thin film growth module deposits the thin film on the first surface or the second surface of the wafer;
and the warping degree adjusting processing module is used for dividing the film into a processing area and a non-processing area and carrying out warping degree adjusting processing on the processing area.
As an alternative of the present invention, the warp adjustment processing module includes at least one of an ultraviolet irradiation device, an ion implantation device, or a plasma processing device.
As an alternative of the present invention, the warpage adjusting processing module further includes a mask having an opening pattern, the shape and size of the opening pattern correspond to the processing region, and the mask is used as a shielding object to shield the non-processing region when the ultraviolet irradiation device, the ion implantation device, or the plasma processing device performs the warpage adjusting processing.
As an alternative of the present invention, the plurality of opening patterns may be arranged in a two-dimensional array in a horizontal plane parallel to a blocking plane of the mask, the two-dimensional array may have a first arrangement direction and a second arrangement direction which are orthogonal to each other and located in the horizontal plane, and an arrangement density of the processing regions in the first arrangement direction may be greater than an arrangement density of the processing regions in the second arrangement direction.
As an alternative of the present invention, the warp adjustment processing module further includes an alignment device for controlling a relative position of the mask and the wafer and aligning the opening pattern with the processing region.
As an alternative of the present invention, the wafer warpage adjusting apparatus further includes a control module, where the control module is connected to the film growth module and the warpage adjusting and processing module, and is configured to control the film growth module and the warpage adjusting and processing module to sequentially perform a plurality of one-to-one corresponding deposition processes of the film and warpage adjusting and processing processes, where each warpage adjusting and processing process is located after the deposition process of the film.
As described above, the present invention provides a method and an apparatus for adjusting warpage of a wafer, which have the following advantages:
according to the invention, by introducing a novel method and equipment for adjusting the warping degree of the wafer, the warping degree of a partial area of the film is adjusted after the film is deposited, so that the anisotropic warping presented by the wafer is adjusted, the surface of the wafer is kept flat, and the process stability and the product yield of the manufacturing process are ensured.
Drawings
Fig. 1 is a flowchart illustrating a method for adjusting warpage of a wafer according to an embodiment of the present invention.
Fig. 2 is a schematic diagram of a normal warp-free wafer according to an embodiment of the invention.
Fig. 3 is a schematic diagram illustrating a wafer bowl warpage according to an embodiment of the present invention.
Fig. 4 is a schematic diagram illustrating a wafer with a bowl-shaped warp according to a first embodiment of the present invention before and after warpage is adjusted by thin film deposition.
Fig. 5 is a schematic diagram illustrating a saddle-shaped warpage of a wafer according to an embodiment of the present invention.
Fig. 6 is a schematic view of a wafer deposited with a silicon nitride film before and after being irradiated by ultraviolet rays according to an embodiment of the present invention.
Fig. 7 is a schematic diagram illustrating a mask having an opening pattern according to a first embodiment of the invention.
Fig. 8 is a schematic diagram illustrating irradiation of the wafer backside with an ultraviolet light source according to an embodiment of the present invention.
Fig. 9 is a graph showing warpage variation of a wafer in the X direction and the Y direction according to a first embodiment of the present invention.
Fig. 10 is a schematic view illustrating a thin film growth module according to a second embodiment of the present invention.
Fig. 11 is a schematic diagram illustrating a warp adjustment processing module according to a second embodiment of the present invention.
Description of the element reference numerals
100 wafer
100a first surface
100b second surface
100c first curve
Second curve of 100d
Third curve of 100e
100f fourth curve
101 silicon nitride film
200 mask
200a opening pattern
300 thin film growth module
301 wafer
302 chamber
303 wafer clamping device
304 silicon nitride film
305 plasma generating device
305a plasma
306 heating and protection module
400 warping degree adjusting processing module
401 wafer
402 chamber
403 wafer clamping device
404 silicon nitride film
405 adjusting source device
406 mask
407 wafer cooling device
408 alignment device
S1-S3 steps 1) -3)
Detailed Description
The embodiments of the present invention are described below with reference to specific embodiments, and other advantages and effects of the present invention will be easily understood by those skilled in the art from the disclosure of the present specification. The invention is capable of other and different embodiments and of being practiced or of being carried out in various ways, and its several details are capable of modification in various respects, all without departing from the spirit and scope of the present invention.
Please refer to fig. 1 to 11. It should be noted that the drawings provided in the present embodiment are only schematic and illustrate the basic idea of the present invention, and although the drawings only show the components related to the present invention and are not drawn according to the number, shape and size of the components in actual implementation, the form, quantity and proportion of the components in actual implementation may be changed arbitrarily, and the layout of the components may be more complicated.
Example one
Referring to fig. 1 to 9, the present embodiment provides a method for adjusting warpage of a wafer, including the following steps:
1) providing a wafer, wherein the wafer is provided with a first surface and a second surface which are oppositely arranged;
2) depositing a thin film on the first surface or the second surface of the wafer;
3) and dividing the film into a processing area and a non-processing area, and performing warping degree adjustment processing on the processing area.
In step 1), referring to S1 of fig. 1 and fig. 2, a wafer 100 is provided, where the wafer 100 has a first surface 100a and a second surface 100b opposite to each other.
As shown in fig. 2, the wafer 100 is normally warp-free. Once the wafer is warped, the alignment of the patterning process may be affected, and even the wafer may be broken due to stress. Therefore, during the fabrication of semiconductor wafers, it is generally desirable to have the wafer 100 shown in fig. 2 without warpage. However, after the wafer is subjected to different processes such as etching or film deposition, the wafer may warp to different degrees due to stress, and warpage adjustment needs to be performed on the warped wafer.
In step 2), please refer to S2 of fig. 1 and fig. 3 to 5, a film is deposited on the first surface 100a or the second surface 100b of the wafer 100.
Fig. 3 is a schematic view of a wafer bowl warpage. It should be noted that the wafer warpage diagram shown in the present embodiment shows the distribution trend of the warpage of the wafer in an exaggerated manner, and the warpage of the actual wafer is generally difficult to be macroscopically perceived. In fig. 3, the first surface 100a of the wafer 100, i.e. the front surface of the wafer, is a concave surface, and the second surface 100b, i.e. the back surface of the wafer, is a convex surface, so that the wafer surface has a bowl-shaped warpage. For such warpage, warpage adjustment may be performed by depositing a silicon nitride film 101 on the second surface 100b of the wafer 100. The wafer 100 may be restored to flatness due to the tensile stress provided by the silicon nitride film 101.
As shown in fig. 4, the wafer 100 with the bowl-shaped warpage is shown before and after adjusting the warpage by thin film deposition. As can be seen from fig. 4, after the silicon nitride film 101 is deposited on the second surface 100b of the wafer 100 originally presenting the bowl-shaped warpage, the wafer 100 recovers the in-plane flatness. Optionally, according to the difference of wafer warpage, in addition to the silicon nitride film 101, other dielectric material films such as a silicon oxide film or a silicon oxynitride film may be deposited. In addition, for a wafer with a front surface prepared with a semiconductor device structure, a film for adjusting warpage is generally deposited on the back surface of the wafer so as not to affect the front surface of the wafer to perform subsequent processes.
However, the wafer warpage caused by the stress generated by some patterning processes in semiconductor processing is not uniformly distributed in the wafer plane, and is also directional. Fig. 5 shows a schematic view of a saddle-shaped warpage of a wafer. In fig. 5, the warpage in two directions perpendicular to each other in the wafer 100 plane is different, which results in a tendency of warpage distribution in the entire wafer plane to be saddle-shaped. For such wafer warpage, the wafer cannot be completely flattened by adjusting the warpage of the wafer by a uniform thin film deposition process. It is necessary to introduce a directional and non-uniform warpage adjustment method for directional and non-uniform wafer warpage.
In step 3), please refer to S3 of fig. 1 and fig. 5 to 9, the thin film is divided into a processing region and a non-processing region, and the warp adjustment processing is performed on the processing region.
Aiming at the directional and uneven wafer warping, after the film deposition process is uniformly adjusted, the film is divided into a processing area and a non-processing area, warping degree adjustment processing is further carried out on the processing area, and the influence of wafer warping anisotropy is counteracted by introducing uneven warping degree adjustment so as to obtain a flat wafer.
The warp adjustment treatment includes, as an example, ultraviolet irradiation, ion implantation, or plasma treatment. The ultraviolet irradiation, ion implantation, plasma treatment and other processes can act on the deposited film to further generate stress and adjust warping degree. Moreover, the process can conveniently carry out the graphic process partition treatment so as to realize the adjustment of the warping degree with directionality. Alternatively, in the present embodiment, ultraviolet irradiation is employed as a means for performing the divisional warp adjustment. The principle is that the silicon nitride layer is irradiated by ultraviolet rays to reduce the content of H elements in the silicon nitride layer, so that Si-H or N-H bonding is reduced, and the silicon nitride layer can obtain stronger tensile stress through newly generated Si-N bonding. As shown in fig. 6, the wafer 100 deposited with the silicon nitride film 101 is illustrated before and after being irradiated by ultraviolet rays. As can be seen from fig. 6, the wafer 100, which originally has a bowl-shaped warpage, is subjected to the ultraviolet irradiation shown by the arrow in fig. 6 on the silicon nitride film 101, and then is restored to be flat due to the stress generated by the silicon nitride layer. On the basis, if the ultraviolet irradiation is performed on the processing area of the upper part of the wafer 100 through the patterning process, the adjustment of the warping degree with directionality can be introduced, so that the warping of the saddle-shaped wafer and the like can be completely restored to be flat.
As an example, as shown in fig. 7, the warp adjustment process includes:
providing a mask 200 having an opening pattern 200a, wherein the shape and size of the opening pattern 200a correspond to the processing region;
and performing warping degree adjustment processing on the processing area by using the mask 200 as a blocking object.
As an example, the wafer 100 is provided with a plurality of processing regions, the plurality of processing regions are arranged in a two-dimensional array in a horizontal plane parallel to the first surface 100a or the second surface 100b, the two-dimensional array has a first arrangement direction and a second arrangement direction which are orthogonal to each other and located in the horizontal plane, and an arrangement density of the processing regions in the first arrangement direction is greater than an arrangement density of the processing regions in the second arrangement direction. In this embodiment, for saddle-shaped warping, it has different degrees of warp in two directions perpendicular to each other. Therefore, for the saddle-shaped warp, in the present embodiment, when the processing regions are divided, the processing regions are arranged in a two-dimensional array, and by setting the arrangement density of the processing regions in the first arrangement direction to be greater than the arrangement density of the processing regions in the second arrangement direction, the warp adjustment with directivity is realized. On this basis, the present embodiment employs the mask 200 having the opening pattern 200a to realize the patterned ultraviolet irradiation. In fig. 7, the opening patterns 200a provided on the mask 200 are arranged to form a two-dimensional array. The two-dimensional arrays correspond to the treatment zones one to one. As shown in fig. 8, when the back surface of the wafer 100 is irradiated by the ultraviolet light source 201, the mask 200 is used as a shielding object to irradiate the processing region on the back surface of the wafer 100 with ultraviolet light through the opening pattern 200a, and the non-processing region is not irradiated with ultraviolet light. At this time, since the two-dimensional arrays are arranged at different densities in different directions, stresses generated by ultraviolet irradiation are also different, thereby realizing adjustment of warp with directivity.
As shown in fig. 9, a relationship diagram of warp variation of the wafer 100 in the X direction and the Y direction before and after warp adjustment in the present embodiment is shown. In fig. 9, a first curve 100c represents a variation in the warp of the wafer 100 in the X direction before the warp adjustment, a second curve 100d represents a variation in the warp of the wafer 100 in the Y direction before the warp adjustment, a third curve 100e represents a variation in the warp of the wafer 100 in the X direction after the warp adjustment, and a fourth curve 100f represents a variation in the warp of the wafer 100 in the Y direction after the warp adjustment. The various curves are shown in fig. 9 for clarity, with the curves being displaced relative to the Z-axis. As can be seen from fig. 9, before performing the warpage adjustment, the first curve 100c and the second curve 100d show that the warpage of the wafer 100 in the X direction and the Y direction is different, that is, the warpage of the wafer 100 has anisotropy, and after performing the warpage adjustment in the present embodiment, the third curve 100e and the fourth curve 100f show that the wafer 100 has been restored to be flat in both the X direction and the Y direction.
As an example, the wafer warpage adjusting method provided in this embodiment includes a plurality of deposition processes and warpage adjusting processes, which are sequentially performed and correspond to each other one by one, and the warpage adjusting process is performed after each deposition process of the thin film. The thickness of the deposited film will also vary according to the requirements of wafer warp control. When the thickness of the deposited film is thick, in order to smoothly realize the warp adjustment by the ultraviolet irradiation, the film deposition process is divided into a plurality of steps, and the corresponding warp adjustment processing process is performed after the deposition process of each film. For example, when a silicon nitride film with a thickness of 100nm is designed to adjust the warpage of a wafer, 10 layers of silicon nitride films can be grown, that is, after each silicon nitride film with a thickness of 10nm is grown, ultraviolet irradiation is performed on the silicon nitride films. The cycle is performed for 10 times to complete the wafer warpage adjustment method provided by the present embodiment.
Example two
Referring to fig. 10 to 11, the present embodiment provides a wafer warpage adjusting apparatus, which is characterized in that: the method comprises the following steps:
the thin film growth module is used for depositing a thin film on the surface of a wafer, the wafer is provided with a first surface and a second surface which are oppositely arranged, and the thin film growth module deposits the thin film on the first surface or the second surface of the wafer;
and the warping degree adjusting processing module is used for dividing the film into a processing area and a non-processing area and carrying out warping degree adjusting processing on the processing area.
Fig. 10 is a schematic view of a thin film growth module 300 provided in this embodiment. The wafer 301 is accommodated in a closed chamber 302 and held by a wafer holding device 303. A plasma generating device 305 is arranged in the direction in which the silicon nitride film 304 needs to be grown on the back surface of the wafer 301, and generates plasma 305a by supplying growth gas and radio frequency power to grow the silicon nitride film 304 on the back surface of the wafer 301. The film growth module 300 is further provided with a heating and protecting module 306, which is located on one side of the front surface of the wafer 301 where the silicon nitride film 304 does not need to be grown, heats the wafer 301 to maintain the temperature required for film deposition, and provides a protecting gas to the front surface of the wafer 301 to prevent the front surface of the wafer 301 from growing an unwanted film. In the present embodiment, the silicon nitride film 304 is grown by Plasma Enhanced Chemical Vapor Deposition (PECVD), but in other embodiments of the present invention, other film growth methods may be used to grow the silicon nitride film 304.
Fig. 11 is a schematic diagram of a warp adjustment processing module 400 according to this embodiment. The wafer 401 is contained in a closed chamber 402 and held by a wafer holding device 403. An adjustment source device 405 and a mask 406 having an opening pattern are disposed in a direction in which a silicon nitride film 404 is grown on the back surface of the wafer 401. The warpage adjusting module 400 further includes a wafer cooling device 407 disposed on one side of the front surface of the wafer 401.
The warp adjustment processing module 400 includes at least one of an ultraviolet irradiation device, an ion implantation device, or a plasma processing device, as an example. In the present embodiment, the adjustment source device 405 is an ultraviolet irradiation device, but in other embodiments of the present invention, in addition to using the ultraviolet irradiation device to generate stress on the silicon nitride film 404, other processing means such as an ion implantation device or a plasma processing device may be used to change the local stress distribution of the silicon nitride film 404, so as to adjust the warpage.
For example, the shape and size of the opening pattern correspond to the processing region, and the mask 406 is used as a blocking object to block the non-processing region when the ultraviolet irradiation device, the ion implantation device, or the plasma processing device performs the warpage adjustment processing. Optionally, the opening patterns are arranged in a two-dimensional array in a horizontal plane parallel to the blocking plane of the mask, the two-dimensional array has a first arrangement direction and a second arrangement direction which are located in the horizontal plane and orthogonal to each other, and the arrangement density of the processing region in the first arrangement direction is greater than the arrangement density of the processing region in the second arrangement direction. The mask 406 and the method for disposing the opening pattern can refer to the related parts of the first embodiment.
As an example, as shown in fig. 11, the warp adjustment processing module 400 further includes an alignment device 408, and the alignment device 408 is configured to control a relative position of the mask 406 and the wafer 401 and align the opening pattern with the processing region. Optionally, the alignment device 408 includes a collimator (collimator), the collimator may determine a relative position between the mask 406 and the wafer 401, and the alignment device 408 rotates the mask 406 to adjust the wafer 40 with a directional warpage.
As an example, in the present embodiment, the thin film growth module 300 and the warp adjustment processing module 400 are independent modules located in different chambers. But may be integrated in the same chamber in other embodiments of the invention. For example, in the thin film growth module, the ultraviolet irradiation device and the mask are integrally installed at appropriate positions to achieve thin film deposition and ultraviolet irradiation in the same chamber.
As an example, the wafer warpage adjusting apparatus further includes a control module, where the control module is connected to the film growth module and the warpage adjusting and processing module, and is configured to control the film growth module and the warpage adjusting and processing module to sequentially perform a plurality of one-to-one deposition processes of the film and warpage adjusting and processing processes, where each warpage adjusting and processing process is located after the deposition process of the film.
As an example, the wafer warp adjustment apparatus further includes a vacuum maintenance module for ensuring a vacuum environment of the chamber, and a wafer transfer module for transferring wafers between different chambers and between the chamber and the wafer cassette.
In summary, the present invention provides a method and an apparatus for adjusting wafer warpage, wherein the method for adjusting wafer warpage comprises the following steps: providing a wafer, wherein the wafer is provided with a first surface and a second surface which are oppositely arranged; depositing a thin film on the first surface or the second surface of the wafer; and dividing the film into a processing area and a non-processing area, and performing warping degree adjustment processing on the processing area. According to the invention, after the film is deposited, warping degree adjustment treatment is carried out on part of the film, so that anisotropic warping presented by the wafer is adjusted, the surface of the wafer is kept flat, and the process stability and the product yield of the manufacturing process are ensured.
The foregoing embodiments are merely illustrative of the principles and utilities of the present invention and are not intended to limit the invention. Any person skilled in the art can modify or change the above-mentioned embodiments without departing from the spirit and scope of the present invention. Accordingly, it is intended that all equivalent modifications or changes which can be made by those skilled in the art without departing from the spirit and technical spirit of the present invention be covered by the claims of the present invention.
Claims (12)
1. A wafer warpage adjusting method is characterized by comprising the following steps:
providing a wafer, wherein the wafer is provided with a first surface and a second surface which are oppositely arranged;
depositing a thin film on the first surface or the second surface of the wafer;
and dividing the film into a processing area and a non-processing area, and performing warping degree adjustment processing on the processing area.
2. The method of claim 1, wherein: the warpage adjusting process includes ultraviolet irradiation, ion implantation, or plasma treatment.
3. The method of adjusting wafer warp as claimed in claim 2, wherein: the warp adjustment process includes:
providing a mask with an opening pattern, wherein the shape and the size of the opening pattern correspond to the processing area;
and using the mask as a shielding object to perform warping degree adjustment processing on the processing area.
4. The method of claim 1, wherein: the processing regions are arranged in a two-dimensional array in a horizontal plane parallel to the first surface or the second surface, the two-dimensional array has a first arrangement direction and a second arrangement direction which are located in the horizontal plane and are mutually orthogonal, and the arrangement density of the processing regions in the first arrangement direction is greater than that of the processing regions in the second arrangement direction.
5. The method of claim 1, wherein: the method comprises a plurality of deposition processes of the film and warpage adjustment processing processes which are sequentially carried out and are in one-to-one correspondence, wherein the warpage adjustment processing process is carried out after the deposition process of each film.
6. The method of claim 1, wherein: the wafer comprises a wafer with a semiconductor device structure formed on the first surface or the second surface, the film comprises a silicon nitride film, and the film and the semiconductor device structure are respectively formed on different surfaces of the wafer.
7. The utility model provides a wafer warpage adjustment apparatus which characterized in that: the method comprises the following steps:
the thin film growth module is used for depositing a thin film on the surface of a wafer, the wafer is provided with a first surface and a second surface which are oppositely arranged, and the thin film growth module deposits the thin film on the first surface or the second surface of the wafer;
and the warping degree adjusting processing module is used for dividing the film into a processing area and a non-processing area and carrying out warping degree adjusting processing on the processing area.
8. The wafer warp adjustment apparatus of claim 7, wherein: the warpage adjusting processing module comprises at least one of an ultraviolet irradiation device, an ion implantation device or a plasma processing device.
9. The wafer warp adjustment apparatus of claim 8, wherein: the warping degree adjustment processing module further comprises a mask with an opening graph, the shape and the size of the opening graph correspond to those of the processing area, and the mask is used as a shielding object when the ultraviolet irradiation device, the ion implantation device or the plasma processing device carries out warping degree adjustment processing, and the non-processing area is shielded.
10. The wafer warp adjustment apparatus of claim 9, wherein: the mask comprises a mask body, a plurality of opening patterns and a plurality of processing areas, wherein the opening patterns are arranged in a two-dimensional array in a horizontal plane parallel to a blocking plane of the mask, the two-dimensional array is provided with a first arrangement direction and a second arrangement direction which are positioned in the horizontal plane and are mutually orthogonal, and the arrangement density of the processing areas in the first arrangement direction is greater than that of the processing areas in the second arrangement direction.
11. The wafer warp adjustment apparatus of claim 9, wherein: the warping degree adjustment processing module further comprises an alignment device, and the alignment device is used for controlling the relative position of the mask and the wafer and aligning the opening pattern with the processing area.
12. The wafer warp adjustment apparatus of claim 7, wherein: still include control module, control module connects film growth module with warpage adjustment processing module is used for control film growth module with warpage adjustment processing module carries out a plurality of one-to-one in proper order the deposition process of film with warpage adjustment processing process, every warpage adjustment processing process is located behind the deposition process of film.
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