CN110677604B - 电压域全局曝光图像传感器的像素单元及其控制方法 - Google Patents
电压域全局曝光图像传感器的像素单元及其控制方法 Download PDFInfo
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- CN110677604B CN110677604B CN201910965769.XA CN201910965769A CN110677604B CN 110677604 B CN110677604 B CN 110677604B CN 201910965769 A CN201910965769 A CN 201910965769A CN 110677604 B CN110677604 B CN 110677604B
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- 238000000034 method Methods 0.000 title claims abstract description 13
- 238000005070 sampling Methods 0.000 claims abstract description 56
- 238000009792 diffusion process Methods 0.000 claims abstract description 33
- 238000006243 chemical reaction Methods 0.000 claims abstract description 28
- 238000009825 accumulation Methods 0.000 claims abstract description 5
- 239000000758 substrate Substances 0.000 claims description 10
- 239000003990 capacitor Substances 0.000 claims description 9
- 230000008878 coupling Effects 0.000 claims description 8
- 238000010168 coupling process Methods 0.000 claims description 8
- 238000005859 coupling reaction Methods 0.000 claims description 8
- 238000002955 isolation Methods 0.000 claims description 8
- 239000004065 semiconductor Substances 0.000 claims description 8
- 239000002131 composite material Substances 0.000 claims description 4
- 238000010586 diagram Methods 0.000 description 6
- 206010034960 Photophobia Diseases 0.000 description 4
- 208000013469 light sensitivity Diseases 0.000 description 4
- 230000003071 parasitic effect Effects 0.000 description 4
- 238000005468 ion implantation Methods 0.000 description 3
- 230000000295 complement effect Effects 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 230000010354 integration Effects 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
- H04N25/63—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to dark current
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/50—Control of the SSIS exposure
- H04N25/57—Control of the dynamic range
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
- H04N25/62—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
- H04N25/75—Circuitry for providing, modifying or processing image signals from the pixel array
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
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- Engineering & Computer Science (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Abstract
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CN201910965769.XA CN110677604B (zh) | 2019-10-12 | 2019-10-12 | 电压域全局曝光图像传感器的像素单元及其控制方法 |
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CN201910965769.XA CN110677604B (zh) | 2019-10-12 | 2019-10-12 | 电压域全局曝光图像传感器的像素单元及其控制方法 |
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CN110677604A CN110677604A (zh) | 2020-01-10 |
CN110677604B true CN110677604B (zh) | 2024-02-20 |
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Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
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CN114208156B (zh) * | 2021-08-04 | 2023-10-27 | 汇顶科技私人有限公司 | 像素单元、像素阵列及相关本地控制单元、图像传感器及电子装置 |
CN114785974A (zh) * | 2022-04-15 | 2022-07-22 | 清华大学 | 采样单元及其操作方法、电子装置和像素单元 |
CN115802186B (zh) * | 2023-01-31 | 2023-05-02 | 天津海芯微电子技术有限公司 | 一种低噪声全局曝光像素结构及其工作方法 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108200366A (zh) * | 2017-02-03 | 2018-06-22 | 思特威电子科技(美国)有限公司 | 像素单元和形成像素单元的方法及数字相机成像系统 |
CN108777772A (zh) * | 2018-08-28 | 2018-11-09 | 上海晔芯电子科技有限公司 | 图像传感器 |
CN208540034U (zh) * | 2018-08-28 | 2019-02-22 | 上海晔芯电子科技有限公司 | 图像传感器 |
CN109728006A (zh) * | 2017-10-30 | 2019-05-07 | 南京吉相传感成像技术研究院有限公司 | 基于复合介质栅mosfet的全局曝光光敏探测器 |
CN210578887U (zh) * | 2019-10-12 | 2020-05-19 | 南京威派视半导体技术有限公司 | 电压域全局曝光图像传感器的像素单元及其传感器 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20090122173A1 (en) * | 2007-11-13 | 2009-05-14 | William Emerson Tennant | Low noise readout apparatus and method for cmos image sensors |
CN104157658B (zh) * | 2014-04-09 | 2017-05-10 | 苏州东微半导体有限公司 | 一种半导体感光单元及其半导体感光单元阵列 |
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- 2019-10-12 CN CN201910965769.XA patent/CN110677604B/zh active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108200366A (zh) * | 2017-02-03 | 2018-06-22 | 思特威电子科技(美国)有限公司 | 像素单元和形成像素单元的方法及数字相机成像系统 |
CN109728006A (zh) * | 2017-10-30 | 2019-05-07 | 南京吉相传感成像技术研究院有限公司 | 基于复合介质栅mosfet的全局曝光光敏探测器 |
CN108777772A (zh) * | 2018-08-28 | 2018-11-09 | 上海晔芯电子科技有限公司 | 图像传感器 |
CN208540034U (zh) * | 2018-08-28 | 2019-02-22 | 上海晔芯电子科技有限公司 | 图像传感器 |
CN210578887U (zh) * | 2019-10-12 | 2020-05-19 | 南京威派视半导体技术有限公司 | 电压域全局曝光图像传感器的像素单元及其传感器 |
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