CN110676347A - PERC battery production control method for improving yield of black components - Google Patents
PERC battery production control method for improving yield of black components Download PDFInfo
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- CN110676347A CN110676347A CN201910920404.5A CN201910920404A CN110676347A CN 110676347 A CN110676347 A CN 110676347A CN 201910920404 A CN201910920404 A CN 201910920404A CN 110676347 A CN110676347 A CN 110676347A
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- 101001073212 Arabidopsis thaliana Peroxidase 33 Proteins 0.000 title claims abstract description 10
- 101001123325 Homo sapiens Peroxisome proliferator-activated receptor gamma coactivator 1-beta Proteins 0.000 title claims abstract description 10
- 102100028961 Peroxisome proliferator-activated receptor gamma coactivator 1-beta Human genes 0.000 title claims abstract description 10
- 238000000195 production control method Methods 0.000 title claims abstract description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 24
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 24
- 239000010703 silicon Substances 0.000 claims abstract description 24
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims abstract description 14
- 238000007650 screen-printing Methods 0.000 claims abstract description 12
- 241000269913 Pseudopleuronectes americanus Species 0.000 claims abstract description 7
- 238000010030 laminating Methods 0.000 claims abstract description 7
- 238000006243 chemical reaction Methods 0.000 claims abstract description 5
- 230000003647 oxidation Effects 0.000 claims abstract description 5
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 5
- 238000005245 sintering Methods 0.000 claims abstract description 5
- 239000010410 layer Substances 0.000 claims description 90
- 229910004205 SiNX Inorganic materials 0.000 claims description 22
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 20
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 20
- 239000002356 single layer Substances 0.000 claims description 9
- 238000000034 method Methods 0.000 claims description 8
- 238000000576 coating method Methods 0.000 claims description 7
- 239000011248 coating agent Substances 0.000 claims description 6
- 238000000151 deposition Methods 0.000 claims description 4
- 230000008021 deposition Effects 0.000 claims description 4
- 239000013078 crystal Substances 0.000 claims 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 abstract description 7
- 239000007888 film coating Substances 0.000 abstract description 4
- 238000009501 film coating Methods 0.000 abstract description 4
- 230000004075 alteration Effects 0.000 abstract description 3
- 230000015556 catabolic process Effects 0.000 abstract description 2
- 238000006731 degradation reaction Methods 0.000 abstract description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- 229910002804 graphite Inorganic materials 0.000 description 4
- 239000010439 graphite Substances 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 241000887125 Chaptalia nutans Species 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
The invention relates to a PERC battery production control method for improving the yield of a black component, which comprises the following steps: 1) growing a layer of SiO on the front surface of the silicon wafer in a tubular thermal oxidation mode2(ii) a 2) Growing a layer of compact alumina on the back of a silicon wafer by ALD; 3) performing tubular PECVD film coating on the front surface of the silicon wafer; 4) performing tubular PECVD film coating on the back of the silicon wafer; 5) carrying out back laser grooving, and carrying out front screen printing sintering and sorting, wherein the service life of the front screen printing plate is less than or equal to 50000 times; 7) selecting a cell with the film thickness of 70-80nm, the average width of fine grid lines on the front surface of 40-50 mu m and the photoelectric conversion efficiency of 22.0-22.1% by using a cell film color testing and sorting device; 8) and (5) laminating the black back plate to obtain the all-black assembly. The invention improves the yield of the black components, reduces the degradation caused by the chromatic aberration of the black components and greatly improves the satisfaction degree of customers on the black components.
Description
Technical Field
The invention relates to the technical field of solar cells, in particular to a PERC cell production control method for improving the yield of black components.
Background
At present, the mainstream PERC battery piece in the market is used for laminating a white back plate, but with the higher and higher requirements on the appearance of the assembly, the requirement is changed into an all-black assembly for laminating a black back plate, and most of the PERC batteries cannot meet the effect of the all-black assembly at present, mainly because a back SiNx film layer is plated in a winding mode, a front film layer is blue, and the like.
Although the color uniformity of the front surface film can be enhanced and the edge wraparound plating situation can be reduced through a series of process improvements such as ALD alumina single-side passivation, front surface coating and back surface coating, the pure black component effect can be realized after the black back plate is laminated. However, in the research process, the black component has slight bluing phenomenon, which is not caused by the film color, but has a great relation with the width of the front electrode grid line, and the difference of the thickness and the fineness of the grid line can show the color difference after the component is laminated.
Disclosure of Invention
The technical problem to be solved by the invention is as follows: a PERC battery production control method for improving the yield of black components is provided.
The technical scheme adopted by the invention for solving the technical problems is as follows: a PERC battery production control method for improving black component yield comprises the following steps:
1) growing a layer of SiO on the front surface of the silicon wafer in a tubular thermal oxidation mode2The thickness is 1-3nm, the temperature is 600-750 ℃, and the time is 30-60 min;
2) performing single-side alumina atomic deposition in an ALD mode, and growing a layer of compact alumina on the back of a silicon wafer, wherein the thickness of the alumina is 2-5 nm;
3) coating a film on the front surface of the silicon chip, wherein the film layer is a multilayer film and comprises a bottom SiOx layer, a middle SiNx layer and a top SiOx layer, the total film thickness of the multilayer film is 70-90nm, and the refractive index is 1.9-2.1;
4) coating a film on the back of the silicon chip, wherein the film layer is a multilayer film and comprises a bottom SiOx layer, a middle SiNx layer and a top SiOx layer, the total film thickness of the multilayer film is 100-200nm, and the refractive index is 1.9-2.1;
5) carrying out back laser grooving, and carrying out front screen printing sintering and sorting, wherein the service life of the front screen printing plate is less than or equal to 50000 times;
7) selecting a cell with the film thickness of 70-80nm, the average width of fine grid lines on the front surface of 40-50 mu m and the photoelectric conversion efficiency of 22.0-22.1% by using a cell film color testing and sorting device;
8) and (5) laminating the black back plate to obtain the all-black assembly.
Furthermore, in the step 3), the refractive index of the bottom SiOx layer is 1.4-1.65, and the thickness is 5-30 nm; the middle layer is a single-layer or multi-layer SiNx layer, the total film thickness is 30-70nm, and the refractive index is 1.9-2.3; the refractive index of the SiOx layer on the top layer is 1.4-1.65, and the thickness is 10-40 nm.
Still further, in the step 4), the refractive index of the bottom SiOx layer is 1.4-1.65, and the thickness is 5-25 nm; the middle layer is a single-layer or multi-layer SiNx layer, the total film thickness is 40-80nm, and the refractive index is 1.9-2.3; the top layer is a single-layer or multi-layer SiNx layer, the total film thickness is 40-80nm, and the refractive index is 1.9-2.3.
The invention adopts the film coating process of front side and back side and the specific film structure of the invention, and the process sequence and the structure can ensure that the front side uniformity of the silicon wafer is obviously superior to the film coating process of back side and front side, and the invention is more suitable for the requirements of black components. The main reasons are as follows: the tubular PECVD graphite boat is used as a carrier of a silicon wafer, the silicon wafer is in contact with the boat sheet through a graphite clamping point, and the silicon wafer is also used as a part of an electric field, so that the contact resistance between the silicon wafer and the graphite boat sheet is smaller and better; if a back-side-to-front-side coating process is adopted and a thick silicon nitride layer is coated on the back side of the silicon wafer, the silicon nitride layer on the back side of the silicon wafer greatly increases the contact resistance between the silicon wafer and the graphite boat when the front side is coated, so that the uniformity of the front side is poor. And through the sorting control of the battery pieces, the bluing phenomenon of the black assembly can be well solved, and therefore the yield of the black assembly is improved.
The invention has the beneficial effects that: the yield of the black components is improved, the degradation caused by the chromatic aberration of the black components is reduced, and the satisfaction degree of customers on the black components is greatly improved.
Detailed Description
The present invention will now be described in further detail with reference to examples.
Example 1
1. And (3) texturing, diffusing, SE, edge etching and back polishing the monocrystalline silicon wafer.
2. Growing a layer of SiO on the front surface of the silicon wafer by adopting a tubular thermal oxidation mode at the temperature of 750 ℃ for 60min2And the thickness is 3 nm.
3. And performing single-side alumina atomic deposition in an ALD mode, and growing a layer of compact alumina on the back of the silicon wafer, wherein the thickness of the alumina is 4.5 nm.
4. The tubular PECVD front surface is plated with a film, the refractive index of the SiOx layer at the bottom layer is 1.65, and the thickness is 10 nm; the middle layer of the multilayer film is a single layer, the total film thickness is 60nm, and the refractive index is 2.2; the top layer of the multilayer film is a SiOx layer, the refractive index of the multilayer film is 1.65, and the thickness of the multilayer film is 10 nm; the multilayer film had a total film thickness of 80nm and a refractive index of 1.95.
5. The back of the tubular PECVD is coated with a film, the refractive index of the SiOx layer at the bottom layer is 1.65, and the thickness is 20 nm; the multilayer film middle layer is a double-layer SiNx layer, the thickness of the bottom layer SiNx layer is 40nm, the refractive index is 2.2, the thickness of the upper layer SiNx layer is 40nm, and the refractive index is 2.3; the top layer of the multilayer film is a single-layer SiNx layer, the total film thickness is 40nm, and the refractive index is 2.0; the multilayer film had a total film thickness of 140nm and a refractive index of 2.1.
6. Carrying out back laser grooving, sintering and sorting by screen printing on the front side, wherein the service life of the screen printing plate for screen printing on the front side is 30000 times;
7. selecting a cell with the film thickness of 70-78nm, the average width of the fine grid lines on the front surface of 40-44 mu m and the photoelectric conversion efficiency of 22.0% by using a cell film color testing and sorting device;
8. and (5) laminating the black back plate to obtain the all-black assembly.
Example 2
1. And (3) texturing, diffusing, SE, edge etching and back polishing the monocrystalline silicon wafer.
2. Growing a layer of SiO on the front surface of the silicon wafer by adopting a tubular thermal oxidation mode at the temperature of 700 ℃ for 45min2And the thickness is 2 nm.
3. And performing single-side alumina atomic deposition in an ALD mode, and growing a layer of compact alumina on the back of the silicon wafer, wherein the thickness of the alumina is 3.0 nm.
4. The tubular PECVD front surface is plated with a film, the refractive index of the SiOx layer at the bottom layer is 1.55, and the thickness is 5 nm; the multilayer film middle layer is a double-layer SiNx layer, the thickness of the bottom SiNx layer is 20nm, the refractive index is 2.1, the thickness of the upper SiNx layer is 40nm, and the refractive index is 2.3; the top layer of the multilayer film is a SiOx layer, the refractive index of the multilayer film is 1.55, and the thickness of the multilayer film is 10 nm; the multilayer film had a total film thickness of 75nm and a refractive index of 2.05.
5. The back of the tubular PECVD is coated with a film, the refractive index of the SiOx layer at the bottom layer is 1.45, and the thickness is 10 nm; the multilayer film middle layer is a double-layer SiNx layer, the thickness of the bottom layer SiNx layer is 30nm, the refractive index is 2.1, the thickness of the upper layer SiNx layer is 30nm, and the refractive index is 2.1; the top layer of the multilayer film is a single-layer SiNx layer, the total film thickness is 60nm, and the refractive index is 2.3; the multilayer film had a total film thickness of 130nm and a refractive index of 2.0.
6. Carrying out back laser grooving, sintering and sorting by screen printing on the front side, wherein the service life of the screen printing plate for screen printing on the front side is 40000 times;
7. selecting a cell with the film thickness of 74-80nm, the average width of the fine grid lines on the front surface of 45-49 μm and the photoelectric conversion efficiency of 22.0% by using a cell film color testing and sorting device;
8. and (5) laminating the black back plate to obtain the all-black assembly.
The yield improvement is shown in table 1.
| Item(s) | Life of fine grid screen | Efficiency gear | Film thickness | Line width | Black component yield |
| Before improvement | 4-10 ten thousand times | 22.00％ | 70-85nm | 40-50um | 85％ |
| Example 1 | 1-5 ten thousand times | 22.00％ | 70-78nm | 40-44um | 98.50％ |
| Example 2 | 1-5 ten thousand times | 22.00％ | 74-80nm | 45-49um | 99.20％ |
TABLE 1
While particular embodiments of the present invention have been described in the foregoing specification, various modifications and alterations to the previously described embodiments will become apparent to those skilled in the art from this description without departing from the spirit and scope of the invention.
Claims (3)
1. A PERC battery production control method for improving black component yield is characterized in that: the method comprises the following steps:
1) growing a layer of SiO on the front surface of the silicon wafer in a tubular thermal oxidation mode2The thickness is 1-3nm, the temperature is 600-750 ℃, and the time is 30-60 min;
2) performing single-side alumina atomic deposition in an ALD mode, and growing a layer of compact alumina on the back of a silicon wafer, wherein the thickness of the alumina is 2-5 nm;
3) coating a film on the front surface of the silicon chip, wherein the film layer is a multilayer film and comprises a bottom SiOx layer, a middle SiNx layer and a top SiOx layer, the total film thickness of the multilayer film is 70-90nm, and the refractive index is 1.9-2.1;
4) coating a film on the back of the silicon chip, wherein the film layer is a multilayer film and comprises a bottom SiOx layer, a middle SiNx layer and a top SiOx layer, the total film thickness of the multilayer film is 100-200nm, and the refractive index is 1.9-2.1;
5) carrying out back laser grooving, and carrying out front screen printing sintering and sorting, wherein the service life of the front screen printing plate is less than or equal to 50000 times;
7) selecting a cell with the film thickness of 70-80nm, the average width of fine grid lines on the front surface of 40-50 mu m and the photoelectric conversion efficiency of 22.0-22.1% by using a cell film color testing and sorting device;
8) and (5) laminating the black back plate to obtain the all-black assembly.
2. The process of claim 1 for preparing a pure black component single crystal PERC cell, wherein: in the step 3), the refractive index of the bottom SiOx layer is 1.4-1.65, and the thickness is 5-30 nm; the middle layer is a single-layer or multi-layer SiNx layer, the total film thickness is 30-70nm, and the refractive index is 1.9-2.3; the refractive index of the SiOx layer on the top layer is 1.4-1.65, and the thickness is 10-40 nm.
3. The process of claim 1 for preparing a pure black component single crystal PERC cell, wherein: in the step 4), the refractive index of the bottom SiOx layer is 1.4-1.65, and the thickness is 5-25 nm; the middle layer is a single-layer or multi-layer SiNx layer, the total film thickness is 40-80nm, and the refractive index is 1.9-2.3; the top layer is a single-layer or multi-layer SiNx layer, the total film thickness is 40-80nm, and the refractive index is 1.9-2.3.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN114944441A (en) * | 2022-05-23 | 2022-08-26 | 横店集团东磁股份有限公司 | Full-black crystalline silicon solar cell, preparation method thereof and photovoltaic module |
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