CN110675901B - Spin random access memory and method - Google Patents
Spin random access memory and method Download PDFInfo
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- CN110675901B CN110675901B CN201910850886.1A CN201910850886A CN110675901B CN 110675901 B CN110675901 B CN 110675901B CN 201910850886 A CN201910850886 A CN 201910850886A CN 110675901 B CN110675901 B CN 110675901B
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1673—Reading or sensing circuits or methods
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1675—Writing or programming circuits or methods
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1695—Protection circuits or methods
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/04—Arrangements for writing information into, or reading information out from, a digital store with means for avoiding disturbances due to temperature effects
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Abstract
According to the spin random access memory and the method, the second magnetic tunnel junction is arranged in each storage partition, the second magnetic tunnel junction keeps an antiparallel state through current control, the temperature of each storage partition can be detected, and then the temperature is transmitted to the control circuit, so that the control circuit outputs a read-write control signal based on the received temperature, and the read-write voltage is controlled, namely when the temperature is too high, the write voltage is reduced, and the read voltage is increased; and vice versa, so that the problems of write operation failure in a low-temperature region and read errors in a high-temperature region of the spin random access memory are solved, the reliability working range of the spin random access memory is enlarged, and the service life of the spin random access memory is prolonged.
Description
Technical Field
The present application relates to the field of memory technologies, and in particular, to a spin random access memory and a method thereof.
Background
The conventional spin random access memory has the problems of short service life, high error rate of read-write operation, easiness in influence of working temperature and the like, and has a plurality of defects.
Disclosure of Invention
To address at least one of the above deficiencies, the present application provides a spin random access memory comprising:
a plurality of memory partitions; wherein each memory partition comprises: a plurality of first magnetic tunnel junctions and at least one second magnetic tunnel junction;
a read-write circuit electrically connected to the first magnetic tunnel junction;
the temperature control circuit is used for leading a set current into the second magnetic tunnel junction so as to keep the second magnetic tunnel junction in an antiparallel state;
and the control circuit generates a current temperature value according to the electric signal output by the second magnetic tunnel junction and outputs a read-write voltage control signal according to the current temperature value so as to control the voltage value input to the first magnetic tunnel junction by the read-write circuit and further adjust the current temperature of the corresponding storage partition.
In some embodiments, the number of the second magnetic tunnel junctions is plural, and a plurality of the second magnetic tunnel junctions are arranged in series.
In some embodiments, the outputting, by the control circuit, a read-write voltage control signal according to the current temperature value includes:
the control circuit compares the current temperature value with a set temperature value, if the temperature value is higher than the set temperature value, a first read-write voltage control signal is output to control the voltage of a write-in circuit of a storage area to be reduced, the voltage of a read-out circuit to be increased, and then the temperature of a corresponding storage area is reduced, otherwise, if the temperature value is lower than the set temperature value, a second read-write voltage control signal is output to control the voltage of the write-in circuit of the storage area to be increased, the voltage of the read-out circuit to be reduced, and then the temperature of the corresponding storage area is increased.
In some embodiments, the outputting, by the control circuit, a read-write voltage control signal according to the current temperature value includes:
and the control circuit outputs the read-write voltage control signal according to the corresponding relation between a preset temperature value and the output read-write voltage so as to control the read-write circuit to output the voltage corresponding to the current temperature value.
In some embodiments, the read-write circuit includes read-write circuit cells in one-to-one correspondence with each of the first magnetic tunnel junctions; each of the read-write circuit units includes:
two P-type transistors, two N-type transistors and a switching element;
one of the P-type transistors and one of the N-type transistors are connected in parallel at one end of the corresponding first magnetic tunnel junction, the other of the P-type transistors and the other of the N-type transistors are connected in parallel at one end of a switching element, and the other end of the switching element is electrically connected with the other end of the corresponding first magnetic tunnel junction.
The application also provides a method for controlling temperature by using the spin random access memory, which comprises the following steps:
leading a set current into the second magnetic tunnel junction so as to keep the second magnetic tunnel junction in an antiparallel state;
generating a current temperature value according to the electric signal output by the second magnetic tunnel junction;
and outputting a voltage control signal according to the current temperature value so as to control the voltage value input to the first magnetic tunnel junction by the read-write circuit, and further adjusting the current temperature of the corresponding storage partition.
In some embodiments, the outputting a read-write voltage control signal according to the current temperature value includes:
comparing the current temperature value with a set temperature value, if the temperature value is higher than the set temperature value, outputting a first read-write voltage control signal to control the voltage of a write-in circuit of a storage area to be reduced, the voltage of a read-out circuit to be increased, and then reducing the temperature of a corresponding storage area, otherwise, if the temperature value is lower than the set temperature value, outputting a second read-write voltage control signal to control the voltage of the write-in circuit of the storage area to be increased, the voltage of the read-out circuit to be reduced, and then increasing the temperature of the corresponding storage area.
In some embodiments, the outputting a read-write voltage control signal according to the current temperature value includes:
and outputting the read-write voltage control signal according to the corresponding relation between the preset temperature value and the output read-write voltage so as to control the read-write circuit to output the voltage corresponding to the current temperature value.
The present application further provides a method for manufacturing a spin random access memory, comprising:
forming a plurality of memory partitions; wherein each memory partition comprises: a plurality of first magnetic tunnel junctions and at least one second magnetic tunnel junction;
setting a read-write circuit which is electrically connected with the first magnetic tunnel junction;
setting a temperature control circuit, and leading a set current into the second magnetic tunnel junction so as to keep the second magnetic tunnel junction in an antiparallel state;
and setting a control circuit to generate a current temperature value according to an electric signal output by the second magnetic tunnel junction, and outputting a read-write voltage control signal according to the current temperature value to control the voltage value input to the first magnetic tunnel junction by the read-write circuit, so as to adjust the current temperature of the corresponding storage partition.
In some embodiments, the read-write circuit includes read-write circuit cells in one-to-one correspondence with each of the first magnetic tunnel junctions; the setting read-write circuit comprises: setting each read-write circuit unit; wherein, set up one and read and write circuit unit, include:
arranging a P-type transistor and an N-type transistor which are connected in parallel to one end of the corresponding first magnetic tunnel junction;
setting another P-type transistor and another N-type transistor in parallel, and coupling a switch element at the parallel position;
connecting the switching element and the other end of the first magnetic tunnel junction.
The beneficial effect of this application is as follows:
according to the spin random access memory and the method, the second magnetic tunnel junction is arranged in each storage partition, the second magnetic tunnel junction keeps an antiparallel state through current control, the temperature of each storage partition can be detected, and then the temperature is transmitted to the control circuit, so that the control circuit outputs a read-write control signal based on the received temperature, and the read-write voltage is controlled, and therefore when the temperature is too high, the write voltage can be controlled to be reduced, the read voltage is increased, and vice versa, the problems of write operation failure in a low-temperature region and read errors in a high-temperature region of the spin random access memory are solved, the reliability working range of the spin random access memory is enlarged, and the service life of the spin random access memory is prolonged.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the drawings without creative efforts.
FIG. 1 shows a schematic diagram of the writing and reading of a prior art STT-MRAM.
FIG. 2 shows a schematic diagram of the read and write characteristics of STT-MRAM at different temperatures.
FIG. 3 shows STT-MRAM memory partition resistance states as a function of absolute temperature.
FIG. 4 shows STT-MRAM write voltage as a function of absolute temperature.
FIG. 5 shows a schematic diagram of a STT-MRAM architecture of the prior art.
FIG. 6 illustrates a schematic structural diagram of a STT-MRAM in accordance with the inventive concepts of the present application.
Fig. 7 shows a specific structural schematic diagram of the read-write circuit in the embodiment of the present application.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
A MTJ (Magnetic tunnel junction) is a core memory partition of an STT-MRAM (Spin transfer torque-Magnetic random access memory), as shown in fig. 1, in which a write operation is a current passing through the MTJ in two opposite directions and a read operation is generally a smaller current passing through the MTJ. As shown in fig. 2 to 4, since the write current (voltage) of the STT-MRAM is inversely proportional to the temperature (absolute temperature), i.e., a lower temperature requires a larger write current (voltage). This causes the chip to be in the low temperature region, the write operation becomes difficult, the problem of easy occurrence of erasing failure; while in the high temperature region, the write operation becomes much simpler, but the read error is aggravated because the read tolerance becomes smaller. Therefore, the conventional spin random access memory has the problems of short service life, high error rate of read-write operation, high possibility of being influenced by working temperature and the like.
In view of the above, as shown in fig. 6, one aspect of the present application provides a spin random access memory, including: a plurality of memory partitions; wherein each memory partition comprises: a plurality of first magnetic tunnel junctions (not shown in FIG. 6) and at least one second magnetic tunnel junction; a read-write circuit electrically connected to the first magnetic tunnel junction; the temperature control circuit is used for leading a set current into the second magnetic tunnel junction so as to keep the second magnetic tunnel junction in an antiparallel state; and the control circuit generates a current temperature value according to the electric signal output by the second magnetic tunnel junction and outputs a read-write voltage control signal according to the current temperature value so as to control the voltage value input to the first magnetic tunnel junction by the read-write circuit and further adjust the current temperature of the corresponding storage partition.
The application provides a spin random access memory, through set up the second magnetic tunnel junction in every memory partition, the antiparallel state is kept through current control to the second magnetic tunnel junction, and then can detect the temperature of every memory partition, then transmit control circuit, thereby control circuit outputs the read-write control signal based on the temperature received, the voltage of control reading and writing, thereby when the temperature is too high, can control and reduce write voltage, increase read voltage, vice versa, and then the write operation of spin random access memory in the low temperature region is failed and the read error problem of high temperature district has been solved, increase spin random access memory's reliability working range, improve spin random access memory's life.
In the embodiment of the invention, each storage partition in the spin random access memory is independent, and the control circuit controls the reading and writing of each storage partition independently, so that the temperature of each storage partition is in a better temperature range, and the respective control of each storage partition is realized.
It is understood that the spin random access memory in the embodiment of the present invention may be STT-MRAM, SOT-MRAM, STT + SOT-MRAM, VCMA-MRAM, etc., which is not limited in this application. It is apparent that a memory partition in a spin random access memory includes at least one magnetic tunnel junction. And a memory partition in this application is defined as the smallest block on the memory.
FIG. 5 shows a schematic structure diagram of a STT-MRAM spin random access memory in the prior art. The STT-MRAM device array comprises an STT-MRAM device array, an address coder, an input and output control circuit and the like; the data reading operation comprises inputting address data and reading instructions, selecting an MTJ (magnetic tunnel junction) device in the array by a row address and column address decoder, applying reading voltage to two ends of the MTJ device by a reading control circuit, and converting detection current into reading data by a detection circuit; the data writing operation comprises inputting address data, data to be written and a writing operation instruction, the MTJ devices in the array are selected by the row address and column address decoders, and the writing control circuit applies writing voltage to two ends of the MTJ devices according to the data to be written and writes the data to be written into the set MTJ devices.
The inventive concept of the present application is described below using STT-MRAM as an example.
The number of the second magnetic tunnel junctions is multiple, and the multiple second magnetic tunnel junctions are arranged in series. This can improve the resolution of temperature detection.
In one embodiment, the current temperature value may be compared with a set temperature value, and temperature control may be performed according to the comparison result, for example, when the temperature is too high, the write-in voltage is controlled to be decreased, and the read voltage is controlled to be increased; when the temperature is too low, the reverse is true, namely the control circuit outputs a read-write voltage control signal according to the current temperature value, and the method comprises the following steps:
the control circuit compares the current temperature value with a set temperature value, if the temperature value is higher than the set temperature value, a first read-write voltage control signal is output to control the voltage of a write-in circuit of a storage area to be reduced, the voltage of a read-out circuit to be increased, and then the temperature of a corresponding storage area is reduced, otherwise, if the temperature value is lower than the set temperature value, a second read-write voltage control signal is output to control the voltage of the write-in circuit of the storage area to be increased, the voltage of the read-out circuit to be reduced, and then the temperature of the corresponding storage area is increased.
This embodiment has the advantage that the temperature of each memory partition can be kept in a steady state (i.e. in a temperature interval) by real-time adjustment according to the current temperature value.
In another embodiment, the outputting, by the control circuit, a read-write voltage control signal according to the current temperature value includes: and the control circuit outputs the read-write voltage control signal according to the corresponding relation between a preset temperature value and the output read-write voltage so as to control the read-write circuit to output the voltage corresponding to the current temperature value.
In this embodiment, the current input voltage may be controlled based on a preset corresponding manner, so that the purpose of adjusting the current temperature value may be achieved by setting the corresponding relationship.
In specific implementation, the corresponding relationship may be, for example, a relationship between a writing voltage and a temperature (absolute temperature):
Vdd_w＝Vw0-k1t, wherein k1A positive parameter, or an inverse proportional function of any temperature T.
Read voltage versus temperature (absolute temperature):
Vdd_r＝Vr0+k2t, wherein k2A positive parameter, or an inverse proportional function of any temperature T.
It can be seen that, due to the write current characteristic of STT-MRAM, the lower the temperature is, the larger write current is required, so that when the temperature of the memory partition is lower, the problem of erasure failure can be avoided by providing the write voltage, and when the temperature of the memory partition is higher, because the higher write current is not required, the rise of the temperature of the memory can be alleviated by reducing the write voltage, and the error rate of reading data can be avoided.
Further, in some embodiments, as shown in FIG. 7, the read-write circuit includes a one-to-one correspondence of read-write circuit cells with each of the first magnetic tunnel junctions; each of the read-write circuit units includes: two P-type transistors (input V in the figure)P0Of (2) a transistorAnd an input VP1Transistor (d), two N-type transistors (input V in the figure)n1And an input Vn0Transistor (WL) and a switching element (WL in the figure); one of the P-type transistors and one of the N-type transistors are connected in parallel at one end of the corresponding first magnetic tunnel junction, the other of the P-type transistors and the other of the N-type transistors are connected in parallel at one end of a switching element, and the other end of the switching element is electrically connected with the other end of the corresponding first magnetic tunnel junction.
It can be known that the spin random access memory in the embodiment of the present invention has the following advantages:
(1) integrating on chip and monitoring different memory blocks independently;
(2) the temperature of different storage blocks of the memory chip is adjusted in a self-adaptive manner by controlling the power supply/frequency of the read-write circuit;
(3) the reliability of the memory is improved;
(4) obtaining a wider working temperature range;
(5) the service life of the memory chip is prolonged.
Further, another aspect of the present application provides a temperature control method using the spin random access memory, specifically including:
s11: leading a set current into the second magnetic tunnel junction so as to keep the second magnetic tunnel junction in an antiparallel state;
s12: generating a current temperature value according to the electric signal output by the second magnetic tunnel junction;
s13: and outputting a voltage control signal according to the current temperature value so as to control the voltage value input to the first magnetic tunnel junction by the read-write circuit, and further adjusting the current temperature of the corresponding storage partition.
Based on the same inventive concept, the temperature control method of the spin random access memory provided by the application comprises the steps that the second magnetic tunnel junction is arranged in each storage partition, the second magnetic tunnel junction keeps an antiparallel state through current control, the temperature of each storage partition can be detected and then transmitted to the control circuit, so that the control circuit outputs a read-write control signal based on the received temperature and controls the read-write voltage, and therefore when the temperature is too high, the write voltage can be controlled to be reduced, the read voltage can be increased, and vice versa, the problems of write operation failure of the spin random access memory in a low temperature region and read errors in a high temperature region are solved, the reliability working range of the spin random access memory is enlarged, and the service life of the spin random access memory is prolonged.
Based on the same inventive concept, in an embodiment, the step S13 specifically includes:
comparing the current temperature value with a set temperature value, if the temperature value is higher than the set temperature value, outputting a first read-write voltage control signal to control the voltage of a write-in circuit of a storage area to be reduced, the voltage of a read-out circuit to be increased, and then reducing the temperature of a corresponding storage area, otherwise, if the temperature value is lower than the set temperature value, outputting a second read-write voltage control signal to control the voltage of the write-in circuit of the storage area to be increased, the voltage of the read-out circuit to be reduced, and then increasing the temperature of the corresponding storage area.
Based on the same inventive concept, step S13 specifically includes:
and outputting the read-write voltage control signal according to the corresponding relation between the preset temperature value and the output read-write voltage so as to control the read-write circuit to output the voltage corresponding to the current temperature value.
In another aspect, the present application provides a method for fabricating a spin random access memory, including:
s21: forming a plurality of memory partitions; wherein each memory partition comprises: a plurality of first magnetic tunnel junctions and at least one second magnetic tunnel junction;
s22: setting a read-write circuit which is electrically connected with the first magnetic tunnel junction;
s23: setting a temperature control circuit, and leading a set current into the second magnetic tunnel junction so as to keep the second magnetic tunnel junction in an antiparallel state;
s24: and setting a control circuit to generate a current temperature value according to an electric signal output by the second magnetic tunnel junction, and outputting a read-write voltage control signal according to the current temperature value to control the voltage value input to the first magnetic tunnel junction by the read-write circuit, so as to adjust the current temperature of the corresponding storage partition.
More specifically, the read-write circuit includes read-write circuit units corresponding to each of the first magnetic tunnel junctions one to one; step S22 includes: setting each read-write circuit unit; wherein, set up one and read and write circuit unit, include:
arranging a P-type transistor and an N-type transistor which are connected in parallel to one end of the corresponding first magnetic tunnel junction;
setting another P-type transistor and another N-type transistor in parallel, and coupling a switch element at the parallel position;
connecting the switching element and the other end of the first magnetic tunnel junction.
Based on the same inventive concept, according to the manufacturing method of the spin random access memory provided by the application, the manufactured spin random access memory can be provided with the second magnetic tunnel junction in each memory partition, the second magnetic tunnel junction is kept in an antiparallel state through current control, the temperature of each memory partition can be detected and then transmitted to the control circuit, so that the control circuit outputs a read-write control signal based on the received temperature and controls the read-write voltage, and therefore when the temperature is too high, the write voltage can be controlled to be reduced, the read voltage can be increased, and vice versa, the problems of write operation failure of the spin random access memory in a low temperature region and read errors in a high temperature region are solved, the reliability working range of the spin random access memory is enlarged, and the service life of the spin random access memory is prolonged.
The embodiments in the present specification are described in a progressive manner, and the same and similar parts among the embodiments are referred to each other, and each embodiment focuses on the differences from the other embodiments. The terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, the presence of additional identical or equivalent elements in a process, method, article, or apparatus that comprises the recited elements is not excluded. In addition, the shown or discussed mutual coupling or direct coupling or communication connection may be an indirect coupling or communication connection through some interfaces, devices or units, and may be in an electrical, mechanical or other form. The embodiments in the present specification are described in a progressive manner, and the same and similar parts among the embodiments are referred to each other, and each embodiment focuses on the differences from the other embodiments. In particular, for the system embodiment, since it is substantially similar to the method embodiment, the description is simple, and for the relevant points, reference may be made to the partial description of the method embodiment. In the description herein, references to the description of the term "one embodiment," "some embodiments," "an example," "a specific example," or "some examples," etc., mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of an embodiment of the specification. In this specification, the schematic representations of the terms used above are not necessarily intended to refer to the same embodiment or example. Furthermore, various embodiments or examples and features of different embodiments or examples described in this specification can be combined and combined by one skilled in the art without contradiction. The above description is only an example of the embodiments of the present disclosure, and is not intended to limit the embodiments of the present disclosure. Various modifications and variations to the embodiments described herein will be apparent to those skilled in the art. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the embodiments of the present specification should be included in the scope of the claims of the embodiments of the present specification.
Claims (8)
1. A spin random memory, comprising:
a plurality of memory partitions; wherein each memory partition comprises: a plurality of first magnetic tunnel junctions and at least one second magnetic tunnel junction;
a read-write circuit electrically connected to the first magnetic tunnel junction;
the temperature control circuit is used for leading a set current into the second magnetic tunnel junction so as to keep the second magnetic tunnel junction in an antiparallel state;
the control circuit generates a current temperature value according to an electric signal output by the second magnetic tunnel junction, and outputs a read-write voltage control signal according to the current temperature value so as to control the voltage value of the current input to the first magnetic tunnel junction by the read-write circuit and further adjust the current temperature of the corresponding storage partition;
the control circuit outputs a read-write voltage control signal according to the current temperature value, and the read-write voltage control signal comprises:
the control circuit compares the current temperature value with a set temperature value, if the temperature value is higher than the set temperature value, a first read-write voltage control signal is output to control the voltage of a write-in circuit of a storage area to be reduced, the voltage of a read-out circuit to be increased, and then the temperature of a corresponding storage area is reduced, otherwise, if the temperature value is lower than the set temperature value, a second read-write voltage control signal is output to control the voltage of the write-in circuit of the storage area to be increased, the voltage of the read-out circuit to be reduced, and then the temperature of the corresponding storage area is increased.
2. The spin random memory of claim 1, wherein the number of second magnetic tunnel junctions is single or multiple arranged in series.
3. The spin random access memory of claim 1, wherein the control circuit outputs a read-write voltage control signal according to the current temperature value, comprising:
and the control circuit outputs the read-write voltage control signal according to the corresponding relation between a preset temperature value and the output read-write voltage so as to control the read-write circuit to output the voltage corresponding to the current temperature value.
4. The spin random memory of claim 1, wherein the read-write circuit comprises a one-to-one correspondence of read-write circuit cells to each first magnetic tunnel junction; each of the read-write circuit units includes:
two P-type transistors, two N-type transistors and a switching element;
one of the P-type transistors and one of the N-type transistors are connected in parallel at one end of the corresponding first magnetic tunnel junction, the other of the P-type transistors and the other of the N-type transistors are connected in parallel at one end of a switching element, and the other end of the switching element is electrically connected with the other end of the corresponding first magnetic tunnel junction.
5. A method of temperature control using the spin random access memory of claim 1, comprising:
leading a set current into the second magnetic tunnel junction so as to keep the second magnetic tunnel junction in an antiparallel state;
generating a current temperature value according to the electric signal output by the second magnetic tunnel junction;
outputting a voltage control signal according to the current temperature value to control the voltage value input to the first magnetic tunnel junction by the read-write circuit, so as to adjust the current temperature of the corresponding storage partition;
the outputting of the read-write voltage control signal according to the current temperature value includes:
comparing the current temperature value with a set temperature value, if the temperature value is higher than the set temperature value, outputting a first read-write voltage control signal to control the voltage of a write-in circuit of a storage area to be reduced, the voltage of a read-out circuit to be increased, and then reducing the temperature of a corresponding storage area, otherwise, if the temperature value is lower than the set temperature value, outputting a second read-write voltage control signal to control the voltage of the write-in circuit of the storage area to be increased, the voltage of the read-out circuit to be reduced, and then increasing the temperature of the corresponding storage area.
6. The method according to claim 5, wherein outputting the read/write voltage control signal according to the current temperature value comprises:
and outputting the read-write voltage control signal according to the corresponding relation between the preset temperature value and the output read-write voltage so as to control the read-write circuit to output the voltage corresponding to the current temperature value.
7. A method for fabricating a spin random access memory, comprising:
forming a plurality of memory partitions; wherein each memory partition comprises: a plurality of first magnetic tunnel junctions and at least one second magnetic tunnel junction;
setting a read-write circuit which is electrically connected with the first magnetic tunnel junction;
setting a temperature control circuit, and leading a set current into the second magnetic tunnel junction so as to keep the second magnetic tunnel junction in an antiparallel state;
setting a control circuit to generate a current temperature value according to an electric signal output by a second magnetic tunnel junction, and outputting a read-write voltage control signal according to the current temperature value to control a voltage value of a current input to the first magnetic tunnel junction by the read-write circuit, so as to adjust the current temperature of a corresponding storage partition;
the outputting of the read-write voltage control signal according to the current temperature value includes:
comparing the current temperature value with a set temperature value, if the temperature value is higher than the set temperature value, outputting a first read-write voltage control signal to control the voltage of a write-in circuit of a storage area to be reduced, the voltage of a read-out circuit to be increased, and then reducing the temperature of a corresponding storage area, otherwise, if the temperature value is lower than the set temperature value, outputting a second read-write voltage control signal to control the voltage of the write-in circuit of the storage area to be increased, the voltage of the read-out circuit to be reduced, and then increasing the temperature of the corresponding storage area.
8. The method of claim 7, wherein the read/write circuit includes a one-to-one correspondence of read/write circuit cells to each of the first magnetic tunnel junctions; the setting read-write circuit comprises: setting each read-write circuit unit; wherein, set up one and read and write circuit unit, include:
arranging a P-type transistor and an N-type transistor which are connected in parallel to one end of the corresponding first magnetic tunnel junction;
setting another P-type transistor and another N-type transistor in parallel, and coupling a switch element at the parallel position;
connecting the switching element and the other end of the first magnetic tunnel junction.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910850886.1A CN110675901B (en) | 2019-09-10 | 2019-09-10 | Spin random access memory and method |
| PCT/CN2020/114512 WO2021047591A1 (en) | 2019-09-10 | 2020-09-10 | Spin random access memory and method |
Applications Claiming Priority (1)
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| CN110660424B (en) * | 2019-09-10 | 2021-05-28 | 北京航空航天大学 | Spin random access memory and method |
| CN112614536A (en) * | 2020-12-09 | 2021-04-06 | 北京智芯微电子科技有限公司 | MRAM (magnetic random Access memory) array temperature self-detection method, memory control method and system |
| CN114627920A (en) * | 2020-12-14 | 2022-06-14 | 浙江驰拓科技有限公司 | Magnetic memory and performance adjusting method thereof |
| CN114822611B (en) * | 2022-06-27 | 2022-09-27 | 波平方科技(杭州)有限公司 | Magnetic storage chip, module and system-in-package chip for approximate calculation |
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