CN110649008A - High-color-rendering LED and production method thereof - Google Patents

High-color-rendering LED and production method thereof Download PDF

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Publication number
CN110649008A
CN110649008A CN201910875961.XA CN201910875961A CN110649008A CN 110649008 A CN110649008 A CN 110649008A CN 201910875961 A CN201910875961 A CN 201910875961A CN 110649008 A CN110649008 A CN 110649008A
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CN
China
Prior art keywords
chip
light
chips
color rendering
led
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Pending
Application number
CN201910875961.XA
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Chinese (zh)
Inventor
易汉平
周虎
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Tianjin Baodi Bauhinia Innovation Institute
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Tianjin Baodi Bauhinia Innovation Institute
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Priority to CN201910875961.XA priority Critical patent/CN110649008A/en
Publication of CN110649008A publication Critical patent/CN110649008A/en
Pending legal-status Critical Current

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50Wavelength conversion elements
    • H01L33/501Wavelength conversion elements characterised by the materials, e.g. binder
    • H01L33/502Wavelength conversion materials
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008Processes
    • H01L2933/0033Processes relating to semiconductor body packages

Abstract

The invention provides a high-color-rendering LED and a production method thereof. The high color rendering LED includes: the light-emitting diode comprises a red light chip with a wavelength of 605-650 nm, a green light chip with a wavelength of 525-555 nm and two blue light chips with a wavelength of 450-475 nm, wherein rated working currents of the red light chip, the green light chip and the blue light chips are the same or equivalent, the four chips are connected in series, and yellow YAG fluorescent powder covers the two blue light chips. The preparation method of the LED with high color rendering property comprises the following steps: fixing a red light chip, a green light chip and two blue light chips; binding each chip in series; covering yellow YAG fluorescent powder on a blue light chip; and using transparent packaging glue as the integral packaging of the light-emitting module to obtain the high-color-rendering LED. The LED light source of the invention adds green light and red light, the proportion of the blue light is naturally reduced, the color rendering property is naturally improved, and the color rendering property is more than 95.

Description

High-color-rendering LED and production method thereof
Technical Field
The invention relates to a high-color-rendering LED and a production method thereof, belonging to the technical field of LED preparation.
Background
The LED white light source generally adopts a synthesis method, one is a white light source compounded and packaged by a plurality of chips emitting different colors of light, and the other is a white light source compounded by a single color chip and fluorescent powder.
The multi-chip packaged white light source is easy to generate color temperature drift in the use process due to the inconsistent attenuation of various chips. The white light source of the blue light single-chip composite fluorescent powder easily has the problems of excessive blue light and low color rendering.
Disclosure of Invention
In order to solve the above-described problems, an object of the present invention is to provide an LED whose color rendering property can be improved to 90 or more.
In order to achieve the above purpose, the present invention provides a high color rendering LED, which comprises a red light chip with a wavelength of 605-.
The invention forms multiband composite white light by the multiband light-emitting chip and the excited fluorescence, and particularly, the green light chip, the red light chip, the blue light chip and the yellow light fluorescent powder are compounded and packaged in a bracket to obtain the LED with higher color rendering.
According to the specific embodiment of the present invention, the rated operating currents of the red light chip, the green light chip and the blue light chip used in the high color rendering LED are preferably the same or equivalent, for example: the rated current of each chip is 20mA, 150mA, 200mA or 300mA and the like; the size, power and other parameters of the chip are not required.
According to the specific embodiment of the invention, the red light chip can be a 630 nm wave band red light chip.
According to the specific embodiment of the invention, the green chip can be a green chip with a wavelength band of 550 nanometers.
According to the specific embodiment of the invention, the blue chip can be a 460 nm blue chip.
In a specific embodiment of the present invention, the high color rendering LED of the present invention may include a 630 nm wavelength red chip, a 550 nm wavelength green chip, and two 460 nm wavelength blue chips, the four chips are connected in series, and the two blue chips are covered with yellow YAG phosphor.
In the high-color-rendering LED, preferably, four chips are disposed on the flat support, and preferably, the flat support has good heat dissipation and light reflection effects.
In the above high color rendering LED, the LED is preferably integrally encapsulated by a transparent encapsulating adhesive. Transparent encapsulating glue is used such as epoxy glue and/or polyester, etc.
The invention also provides a production method of the high-color-rendering LED, which comprises the following steps:
fixing a red light chip, a green light chip and two blue light chips;
binding each chip in series;
covering yellow YAG fluorescent powder on a blue light chip;
and using transparent packaging glue as the integral packaging of the light-emitting module to obtain the LED.
The LED provided by the invention can emit multiband light including blue light, green light, yellow light and red light, so that the LED has higher color rendering property. The white light source of the blue light single-chip composite fluorescent powder is mainly blue light and yellow light, so that the blue light is relatively much, and the color rendering property is poor because the light source lacks red light. The LED light source of the invention adds green light and red light, the proportion of the blue light is naturally reduced, the color rendering property is naturally improved, and the color rendering property is more than 95.
The LED is a white light source packaged by multiple chips, which is a composite light source, and if the blue light chip is attenuated, the red light of the light source is relatively increased, and the color temperature is reduced. The white light emitted by the LED can be seen as two groups, namely red, green and blue composite white light, namely white light generated by the combination of chips; firstly, blue-yellow composite white light, namely, white light is generated by compounding a blue light chip and YAG fluorescent powder, so that the LED has better color temperature stability.
Drawings
Fig. 1 is a schematic structural diagram of a high color rendering LED provided in embodiment 1.
Fig. 2 is a graph of performance test results of the integrating sphere electric light source of the high color rendering LED provided in example 1.
Detailed Description
The technical solutions of the present invention will be described in detail below in order to clearly understand the technical features, objects, and advantages of the present invention, but the present invention is not limited to the practical scope of the present invention.
Example 1
The present embodiment provides a high color rendering LED, which has a structure as shown in fig. 1. The LED comprises a 630-nanometer-band red chip, a 550-nanometer-band green chip and two 460-nanometer-band blue chips, wherein the rated operating currents of the four chips are the same, such as 20mA, 150mA, 200mA or 300 mA.
The four chips are connected in series and fixed on the flat support, and the two blue light chips are covered with yellow light YAG fluorescent powder. The LED is integrally packaged by transparent packaging adhesive.
The LED is produced by the following steps:
1. a 630-nanometer-waveband red light chip, a 550-nanometer-waveband green light chip and two 460-nanometer-waveband blue light chips are fixed on the flat plate support;
2. bonding each chip in series;
3. covering YAG fluorescent powder on a blue light chip with a 460 nanometer waveband;
4. and using transparent packaging glue for integral packaging of the light-emitting module to obtain the LED.
Comparative example 1
This comparative example provides an LED made using only 1 blue chip of 460 nm wavelength and covered with yellow YAG phosphor, with no red chip and no green chip, and the other structures and fabrication procedures are the same as in example 1.
Comparative example 2
The comparative example provides an LED which is packaged by only adopting 1 460-nanometer-band blue light chip, 1 550-nanometer-band green light chip and 1 630-nanometer-band red light chip, does not adopt yellow YAG fluorescent powder, and has the same structure and preparation process as those of the LED in example 1.
The integrating sphere electro-optic source performance comprehensive detector is adopted to directly detect the LED, and the result is shown in figure 2. In fig. 2, 1 to 3 represent LEDs prepared in comparative example 1, comparative example 2, and example 1, respectively. As can be seen from the results of fig. 2: the LED of example 1 covers the widest wavelength range and has the highest color rendering, which can be up to 95 or more.

Claims (10)

1. A high-color rendering LED comprises a red light chip with a wavelength of 605-650 nm, a green light chip with a wavelength of 525-555 nm and two blue light chips with a wavelength of 450-475 nm, wherein rated working currents of the red light chip, the green light chip and the blue light chips are the same or equivalent, the four chips are connected in series, and yellow YAG fluorescent powder covers the two blue light chips.
2. The high color rendering LED of claim 1, wherein the red chip is a 630 nm band red chip.
3. The high color rendering LED of claim 1 or 2, wherein the green chip is a 550 nm band green chip.
4. The high color rendering LED of any one of claims 1-3, wherein the blue chip is a 460 nm band blue chip.
5. The high color rendering LED according to any one of claims 1 to 4, wherein the high color rendering LED comprises a 630 nm band red chip, a 550 nm band green chip, two 460 nm band blue chips, the four chips are connected in series, and the two blue chips are covered with yellow YAG phosphor.
6. The high color rendering LED of claim 1, wherein four chips are disposed on a flat support.
7. The high color rendering LED according to claim 1, wherein the LED is integrally encapsulated by a transparent encapsulating glue.
8. The high color rendering LED of claim 7, wherein the transparent encapsulant comprises epoxy and/or polyester.
9. The high color rendering LED according to claim 1, wherein a rated current of each chip is 20mA, 150mA, 200mA, or 300 mA.
10. Method for producing a high color rendering LED according to any of claims 1 to 9, comprising the steps of:
fixing a red light chip, a green light chip and two blue light chips;
binding each chip in series;
covering yellow YAG fluorescent powder on a blue light chip;
and using transparent packaging glue as the integral packaging of the light-emitting module to obtain the high-color-rendering LED.
CN201910875961.XA 2019-09-17 2019-09-17 High-color-rendering LED and production method thereof Pending CN110649008A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201910875961.XA CN110649008A (en) 2019-09-17 2019-09-17 High-color-rendering LED and production method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201910875961.XA CN110649008A (en) 2019-09-17 2019-09-17 High-color-rendering LED and production method thereof

Publications (1)

Publication Number Publication Date
CN110649008A true CN110649008A (en) 2020-01-03

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Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02238679A (en) * 1989-03-10 1990-09-20 Sanyo Electric Co Ltd Full color light emitting device
US5266817A (en) * 1992-05-18 1993-11-30 Lin Paul Y S Package structure of multi-chip light emitting diode
CN1862842A (en) * 2005-05-13 2006-11-15 光宝科技股份有限公司 LED element
CN101379341A (en) * 2006-01-31 2009-03-04 皇家飞利浦电子股份有限公司 White light source
CN101451657A (en) * 2008-11-25 2009-06-10 广州市鸿利光电子有限公司 Backlight light source and color mixing method thereof
CN101527982A (en) * 2008-03-03 2009-09-09 红蝶科技(深圳)有限公司 LED chip and LD chip hybrid-package light source and liquid crystal projecting apparatus
CN102278641A (en) * 2011-08-25 2011-12-14 上海亚明灯泡厂有限公司 White light-emitting diode (LED) lamp and method for generating high color rendering white light
CN208738238U (en) * 2018-05-18 2019-04-12 深圳市聚飞光电股份有限公司 Convex substrate LED and light emitting device

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02238679A (en) * 1989-03-10 1990-09-20 Sanyo Electric Co Ltd Full color light emitting device
US5266817A (en) * 1992-05-18 1993-11-30 Lin Paul Y S Package structure of multi-chip light emitting diode
CN1862842A (en) * 2005-05-13 2006-11-15 光宝科技股份有限公司 LED element
CN101379341A (en) * 2006-01-31 2009-03-04 皇家飞利浦电子股份有限公司 White light source
CN101527982A (en) * 2008-03-03 2009-09-09 红蝶科技(深圳)有限公司 LED chip and LD chip hybrid-package light source and liquid crystal projecting apparatus
CN101451657A (en) * 2008-11-25 2009-06-10 广州市鸿利光电子有限公司 Backlight light source and color mixing method thereof
CN102278641A (en) * 2011-08-25 2011-12-14 上海亚明灯泡厂有限公司 White light-emitting diode (LED) lamp and method for generating high color rendering white light
CN208738238U (en) * 2018-05-18 2019-04-12 深圳市聚飞光电股份有限公司 Convex substrate LED and light emitting device

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