CN110643327A - Preparation method of sapphire wafer grinding fluid - Google Patents
Preparation method of sapphire wafer grinding fluid Download PDFInfo
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- CN110643327A CN110643327A CN201910986748.6A CN201910986748A CN110643327A CN 110643327 A CN110643327 A CN 110643327A CN 201910986748 A CN201910986748 A CN 201910986748A CN 110643327 A CN110643327 A CN 110643327A
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
Abstract
A preparation method of sapphire wafer grinding fluid belongs to the technical field of sapphire surface treatment. The method comprises the following specific preparation processes: uniformly mixing the boron carbide micro powder, the diamond micro powder and the alumina hollow spheres, putting the mixture into a discharge plasma sintering furnace for annealing treatment, keeping the vacuum constant pressure, raising the temperature to 1350 and 1450 ℃ by a program, keeping the temperature for 10-15 min, and naturally cooling the mixture to be below 100 ℃; putting the cooled mixture into a ball mill for grinding; adding deionized water into the ground mixture to prepare mixed solution; and stirring the mixed solution at room temperature to obtain the sapphire wafer grinding fluid. According to the method, the boron carbide micro powder, the diamond micro powder and the micron-scale alumina hollow spheres are annealed to play a role in synergy, and the prepared grinding fluid can increase the material removal rate and reduce the surface roughness of the ground material.
Description
Technical Field
The invention belongs to the technical field of sapphire surface treatment, and particularly relates to a preparation method of a sapphire wafer grinding fluid.
Background
The single crystal sapphire is a multifunctional crystal material, and has the characteristics of good light transmittance, high melting point, high hardness, excellent electrical insulation, good heat conduction performance, stable chemical performance and the like besides excellent physical performance, chemical performance and optical performance. The method has wide application in the fields of national defense, superconduction, photoelectron, microelectronics and the like. The full sapphire pressure sensor can realize accurate pressure measurement at extremely high temperature exceeding 1000 ℃, the key technical challenge of the full sapphire pressure sensor based on the Fabry-Perot interferometer is the air tightness combination of a sensor cavity, and the sapphire wafer meeting the bonding requirement needs to be obtained by realizing the structure.
As is known, sapphire has high hardness, belongs to a material which is extremely difficult to process, and how to improve the thinning quality of a sapphire wafer and ensure the removal rate of the material is a problem which needs to be solved urgently.
Disclosure of Invention
The technical problem to be solved is as follows: in view of the above technical problems, the present invention provides a method for preparing a sapphire wafer polishing slurry, which can increase the material removal rate and reduce the surface roughness of the polished material.
The technical scheme is as follows: a preparation method of sapphire wafer grinding fluid comprises the following steps:
uniformly mixing 5-10 parts by mass of boron carbide micro powder, 2-4 parts by mass of diamond micro powder and 1-2 parts by mass of alumina hollow spheres, putting the mixture into a discharge plasma sintering furnace for annealing treatment, keeping the vacuum constant pressure, raising the temperature to 1350-;
step two, putting the mixture cooled in the step one into a ball mill to be ground until the particle size is 40-60 mu m;
step three, adding deionized water into the mixture ground in the step two to prepare a mixed solution, wherein the mass ratio of the ground mixture to the deionized water is (10-20): 100;
and step four, stirring the mixed solution obtained in the step three at room temperature for 20-30 min to obtain the sapphire wafer grinding fluid.
Preferably, in the first step, the particle size of the boron carbide micro powder is 23-61 μm, the particle size of the diamond micro powder is 15-20 μm, and the particle size of the alumina hollow sphere is 250-300 μm.
Preferably, in the first step, 8 parts by mass of boron carbide micro powder, 3 parts by mass of diamond micro powder and 2 parts by mass of alumina hollow spheres are uniformly mixed and then put into a discharge plasma sintering furnace for annealing treatment, the temperature is programmed to 1400 ℃ under the condition of keeping vacuum and constant pressure, the mixture is kept for 10min and then naturally cooled to be below 100 ℃, and the constant pressure range is 20 MPa.
Preferably, in the second step, the mixture cooled in the first step is put into a ball mill to be ground until the particle size is 40 μm.
Preferably, deionized water is added into the mixture after grinding in the second step in the third step to prepare a mixed solution, and the mass ratio of the mixture after grinding to the deionized water is 15: 100.
Preferably, in the fourth step, the mixed solution in the third step is stirred at room temperature for 25 min to obtain the sapphire wafer polishing solution.
Has the advantages that: the selected abrasive materials are boron carbide micro powder, diamond micro powder and micron-grade alumina hollow spheres, so that the hardness is good, the stability is high, and the polishing rate can be ensured; in addition, the particle sizes of the boron carbide micro powder and the diamond micro powder are small, the particle size of the alumina hollow sphere is large, and the combination of the particle sizes can increase the removal rate of materials and enhance the grinding effect; meanwhile, the boron carbide micro powder, the diamond micro powder and the micron-scale alumina hollow spheres play a role in synergy after annealing treatment, the surface roughness of the ground material can be reduced, the serious damage to the smooth surface of the material is avoided, the adhesion to the material is weak, and the surface of the material is easy to clean.
Detailed Description
Example 1
A preparation method of sapphire wafer grinding fluid comprises the following steps:
step one, uniformly mixing 5 parts by mass of boron carbide micro powder, 2 parts by mass of diamond micro powder and 1 part by mass of alumina hollow spheres, putting the mixture into a discharge plasma sintering furnace for annealing treatment, keeping the vacuum constant pressure, raising the temperature to 1350 plus materials at 1450 ℃ by a program for 10min, and naturally cooling the mixture to be below 100 ℃, wherein the constant pressure range is 15 MPa, the particle size of the boron carbide micro powder is 23 mu m, the particle size of the diamond micro powder is 15 mu m, and the particle size of the alumina hollow spheres is 250 mu m;
step two, putting the mixture cooled in the step one into a ball mill to be ground until the particle size is 40 mu m;
adding deionized water into the mixture ground in the step two to prepare a mixed solution, wherein the mass ratio of the ground mixture to the deionized water is 10: 100;
and step four, stirring the mixed solution obtained in the step three for 20 min at room temperature to obtain the sapphire wafer grinding fluid.
Example 2
A preparation method of sapphire wafer grinding fluid comprises the following steps:
uniformly mixing 10 parts by mass of boron carbide micro powder, 4 parts by mass of diamond micro powder and 2 parts by mass of alumina hollow spheres, putting the mixture into a discharge plasma sintering furnace for annealing treatment, carrying out temperature programming to 1450 ℃ under the condition of keeping vacuum and constant pressure for 15min, and then naturally cooling to be below 100 ℃, wherein the constant pressure range is 20 MPa, the particle size of the boron carbide micro powder is 61 mu m, the particle size of the diamond micro powder is 20 mu m, and the particle size of the alumina hollow spheres is 300 mu m;
step two, putting the mixture cooled in the step one into a ball mill to be ground until the particle size is 60 mu m;
adding deionized water into the mixture ground in the step two to prepare a mixed solution, wherein the mass ratio of the ground mixture to the deionized water is 20: 100;
and step four, stirring the mixed solution obtained in the step three for 30 min at room temperature to obtain the sapphire wafer grinding fluid.
Example 3
A preparation method of sapphire wafer grinding fluid comprises the following steps:
uniformly mixing 8 parts by mass of boron carbide micro powder, 3 parts by mass of diamond micro powder and 2 parts by mass of alumina hollow spheres, putting the mixture into a discharge plasma sintering furnace for annealing treatment, carrying out temperature programming to 1400 ℃ under the condition of keeping vacuum and constant pressure, keeping the temperature for 10min, and then naturally cooling to below 100 ℃, wherein the constant pressure range is 20 MPa, the particle size of the boron carbide micro powder is 23 mu m, the particle size of the diamond micro powder is 15 mu m, and the particle size of the alumina hollow spheres is 300 mu m;
step two, putting the mixture cooled in the step one into a ball mill to be ground until the particle size is 40 mu m;
adding deionized water into the mixture ground in the step two to prepare a mixed solution, wherein the mass ratio of the ground mixture to the deionized water is 15: 100;
and step four, stirring the mixed solution obtained in the step three at room temperature for 25 min to obtain the sapphire wafer grinding fluid.
The sapphire wafer is thinned and polished by a polishing machine model of Logitech lp50 in England, a cast iron disc is used as a polishing disc, the sapphire wafer with a low-cost c plane (0001) is selected in the embodiment, the thickness of the sapphire wafer is 430 microns, the average roughness is 0.32 nm, and the thickness of the target thinned sapphire wafer is about 100 microns. The thinned sapphire wafer TTV (thickness of different positions of the sapphire wafer is measured by a five-point method, the thickness difference is calculated to obtain the TTV) reaches a target thinning value, and no obvious scratch is formed on the surface.
Claims (6)
1. The preparation method of the sapphire wafer grinding fluid is characterized by comprising the following steps:
uniformly mixing 5-10 parts by mass of boron carbide micro powder, 2-4 parts by mass of diamond micro powder and 1-2 parts by mass of alumina hollow spheres, putting the mixture into a discharge plasma sintering furnace for annealing treatment, keeping the vacuum constant pressure, raising the temperature to 1350-;
step two, putting the mixture cooled in the step one into a ball mill to be ground until the particle size is 40-60 mu m;
step three, adding deionized water into the mixture ground in the step two to prepare a mixed solution, wherein the mass ratio of the ground mixture to the deionized water is (10-20): 100;
and step four, stirring the mixed solution obtained in the step three at room temperature for 20-30 min to obtain the sapphire wafer grinding fluid.
2. The method as claimed in claim 1, wherein the first step comprises a step of grinding the boron carbide micro powder to a particle size of 23-61 μm, a step of grinding the diamond micro powder to a particle size of 15-20 μm, and a step of grinding the alumina hollow spheres to a particle size of 250-300 μm.
3. The method for preparing a sapphire wafer grinding fluid according to claim 1, wherein in the first step, 8 parts by mass of boron carbide micro powder, 3 parts by mass of diamond micro powder and 2 parts by mass of alumina hollow spheres are uniformly mixed and then put into a discharge plasma sintering furnace for annealing treatment, the temperature is programmed to 1400 ℃ under the condition of keeping vacuum and constant pressure, the mixture is kept for 10min and then naturally cooled to below 100 ℃, and the constant pressure range is 20 MPa.
4. The method according to claim 1, wherein in the second step, the mixture cooled in the first step is ground to a particle size of 40 μm in a ball mill.
5. The method according to claim 1, wherein deionized water is added to the mixture obtained by polishing in the second step in the third step to form a mixed solution, and the mass ratio of the mixture obtained by polishing to the deionized water is 15: 100.
6. The method according to claim 1, wherein the mixture of step three is stirred at room temperature for 25 min to obtain the sapphire wafer polishing slurry.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN112375498A (en) * | 2020-11-13 | 2021-02-19 | 镇江丰成特种工具有限公司 | Sapphire wafer grinding fluid and preparation method thereof |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1954042A (en) * | 2004-09-23 | 2007-04-25 | 六号元素(控股)公司 | Polycrystalline abrasive materials and method of manufacture |
| CN102177000A (en) * | 2008-10-10 | 2011-09-07 | 研磨剂与耐火品研究与开发中心C.A.R.R.D.有限公司 | Abrasive grain agglomerates, process for the production thereof and the use thereof for producing abrasives |
| CN102643613A (en) * | 2012-03-31 | 2012-08-22 | 江苏鑫和泰光电科技有限公司 | Grinding liquid for sapphire substrate and preparation method of grinding liquid |
| CN109293393A (en) * | 2018-10-29 | 2019-02-01 | 中原工学院 | A kind of preparation method of plating boron carbide diamond abrasive grain |
| CN109321204A (en) * | 2018-10-24 | 2019-02-12 | 河南省力量钻石股份有限公司 | A kind of more particle agglomeration type abrasive grain bodies, preparation method and applications |
-
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- 2019-10-17 CN CN201910986748.6A patent/CN110643327A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1954042A (en) * | 2004-09-23 | 2007-04-25 | 六号元素(控股)公司 | Polycrystalline abrasive materials and method of manufacture |
| CN102177000A (en) * | 2008-10-10 | 2011-09-07 | 研磨剂与耐火品研究与开发中心C.A.R.R.D.有限公司 | Abrasive grain agglomerates, process for the production thereof and the use thereof for producing abrasives |
| CN102643613A (en) * | 2012-03-31 | 2012-08-22 | 江苏鑫和泰光电科技有限公司 | Grinding liquid for sapphire substrate and preparation method of grinding liquid |
| CN109321204A (en) * | 2018-10-24 | 2019-02-12 | 河南省力量钻石股份有限公司 | A kind of more particle agglomeration type abrasive grain bodies, preparation method and applications |
| CN109293393A (en) * | 2018-10-29 | 2019-02-01 | 中原工学院 | A kind of preparation method of plating boron carbide diamond abrasive grain |
Non-Patent Citations (2)
| Title |
|---|
| 裴立宅: "《高技术陶瓷材料》", 31 July 2015, 合肥：合肥工业大学出版社 * |
| 许涤新 等: "《中国工业产品大辞典 1》", 31 May 1988, 福州：福建科学技术出版社 * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112375498A (en) * | 2020-11-13 | 2021-02-19 | 镇江丰成特种工具有限公司 | Sapphire wafer grinding fluid and preparation method thereof |
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Application publication date: 20200103 |