CN108863397A - A kind of technique preparing SiN ceramic with high heat conductivity crucible - Google Patents
A kind of technique preparing SiN ceramic with high heat conductivity crucible Download PDFInfo
- Publication number
- CN108863397A CN108863397A CN201810768009.5A CN201810768009A CN108863397A CN 108863397 A CN108863397 A CN 108863397A CN 201810768009 A CN201810768009 A CN 201810768009A CN 108863397 A CN108863397 A CN 108863397A
- Authority
- CN
- China
- Prior art keywords
- crucible
- heat conductivity
- technique
- high heat
- ceramic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
- C04B35/58—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides
- C04B35/584—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on silicon nitride
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3205—Alkaline earth oxides or oxide forming salts thereof, e.g. beryllium oxide
- C04B2235/3206—Magnesium oxides or oxide-forming salts thereof
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/50—Constituents or additives of the starting mixture chosen for their shape or used because of their shape or their physical appearance
- C04B2235/54—Particle size related information
- C04B2235/5418—Particle size related information expressed by the size of the particles or aggregates thereof
- C04B2235/5436—Particle size related information expressed by the size of the particles or aggregates thereof micrometer sized, i.e. from 1 to 100 micron
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/50—Constituents or additives of the starting mixture chosen for their shape or used because of their shape or their physical appearance
- C04B2235/54—Particle size related information
- C04B2235/5418—Particle size related information expressed by the size of the particles or aggregates thereof
- C04B2235/5445—Particle size related information expressed by the size of the particles or aggregates thereof submicron sized, i.e. from 0,1 to 1 micron
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/60—Aspects relating to the preparation, properties or mechanical treatment of green bodies or pre-forms
- C04B2235/602—Making the green bodies or pre-forms by moulding
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/65—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes
- C04B2235/656—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes characterised by specific heating conditions during heat treatment
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/65—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes
- C04B2235/656—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes characterised by specific heating conditions during heat treatment
- C04B2235/6562—Heating rate
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/65—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes
- C04B2235/656—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes characterised by specific heating conditions during heat treatment
- C04B2235/6567—Treatment time
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/65—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes
- C04B2235/658—Atmosphere during thermal treatment
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/65—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes
- C04B2235/658—Atmosphere during thermal treatment
- C04B2235/6581—Total pressure below 1 atmosphere, e.g. vacuum
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
- C04B2235/96—Properties of ceramic products, e.g. mechanical properties such as strength, toughness, wear resistance
- C04B2235/9607—Thermal properties, e.g. thermal expansion coefficient
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Materials Engineering (AREA)
- Structural Engineering (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Ceramic Products (AREA)
Abstract
The present invention discloses a kind of ceramic crucible technique, belongs to ceramic crucible production technical field, and in particular to a kind of technique for preparing SiN ceramic with high heat conductivity crucible；A kind of technique preparing SiN ceramic with high heat conductivity crucible, including composite powder grinding, crucible form, are surface-treated and are made four steps of ripe base；High-purity prepared by the present invention, highly thermally conductive silicon nitride crucible, it can be repeated several times use, the wasting of resources caused by avoiding silica crucible disposable, and its high temperature resistance is superior, play the role of the bilayer of silica crucible and graphite crucible simultaneously, the oxygen content of silicon single crystal rod can be reduced, conversion efficiency of solar cell is improved, positive effect is played to monocrystalline silicon performance.
Description
Technical field
The present invention relates to a kind of ceramic crucible techniques, belong to ceramic crucible production technical field, and in particular to a kind of to prepare
The technique of SiN ceramic with high heat conductivity crucible.
Background technique
With the development of science and technology and social progress, highly thermally conductive ceramic crucible is as photovoltaic cell industry, ic core
The Primary Component in piece silicon wafer field achieves huge research achievement, and monocrystalline silicon is always in occupation of dominant position, and about 80% too
Positive energy battery is made by crystalline silicon.Pulling of silicon single crystal has unique crystal orientation and higher purity, and defect is few, the sun obtained
Energy cell conversion efficiency is high, averagely can reach 18% or so, is one of the main material of current photovoltaic cell.
Traditional pulling of silicon single crystal is quartz with crucible material, is only capable of after coating treatment disposable, and silica crucible exists
Softening need to cooperate graphite crucible while use at use temperature：This mode not only results in waste of resources, and increases cost recovery, together
When increase the production cost of monocrystalline silicon, be unfavorable for the promotion of the reduction of monocrystalline silicon oxygen content and the transformation efficiency of battery.It finds
New material develops energy-saving crucible, to reduce turning for monocrystalline silicon production cost, the quality for improving monocrystalline silicon piece and battery
Change the emphasis that efficiency is research and industrialization concern in industry.
Summary of the invention
To break through existing silicon nitride crucible size and thermal conductivity, it is developed in photovoltaic industry and IC chip field
Whole new set of applications, high-purity prepared by the present invention, highly thermally conductive silicon nitride crucible can be repeated several times use, avoid silica crucible one
The wasting of resources caused by secondary property use, and its high temperature resistance is superior, while playing the double-deck work of silica crucible and graphite crucible
With can reduce the oxygen content of silicon single crystal rod, improve conversion efficiency of solar cell, play positive effect to monocrystalline silicon performance.
The object of the present invention is achieved like this：
A kind of technique preparing SiN ceramic with high heat conductivity crucible, includes the following steps：
S1, composite powder grinding：By 65-80 parts of high-purity a phase silicon nitride powder, 14-18 parts of magnesia and 3-5 parts of adhesive mixing, add
Enter 10-18 parts of alcohol and make solvent, slurry is ground by sand mill after being sufficiently mixed, by mist projection granulating, obtains pelletizing.
Further, solids in pulp amount described in S1 is 30%-45%.
Further, grinding meso-position radius described in S1 is 0.5-1.5um.
S2, crucible molding：The pelletizing that will be obtained is formed crucible with cold isostatic compaction equipment.
S3, surface treatment：Crucible biscuit carries out the surface treatment of biscuit, formin embryo after degumming tech.
Ripe base is made in S4：Biscuit in S3 is placed in the crucible of gas pressure sintering furnace, after vacuumizing with 40-50 DEG C/
15min carries out gas pressure sintering, is filled with nitrogen after heating up for the first time and pressurizes, with 20-30 DEG C/15min after being persistently sintered 2-3 hours
Heating rate continue second and heat up, sintering is begun to cool after 1-2 hour, until the completion of ripe base.
Further, first time warming temperature described in S4 is 1200-1300 DEG C.
Further, pressurization pressure described in S4 is 5-6MPa.
Further, it is 1.5-2L/min that nitrogen flow rate in nitrogen procedure is filled with described in S4.
Further, second of warming temperature described in S4 is 1800-1850 DEG C.
Compared with prior art, the present invention having the advantages that：
1, disclosed a kind of technique for preparing SiN ceramic with high heat conductivity crucible according to the present invention has high-purity and highly thermally conductive
Rate；
2, prepared SiN ceramic with high heat conductivity crucible according to the present invention, can be repeated as many times and use；
3, prepared SiN ceramic with high heat conductivity crucible according to the present invention, substitutes silica crucible and graphite crucible, greatly mentions
High Silicon Wafer product yield, quality and reduction production cost.
Specific embodiment
Embodiment one
A kind of technique preparing SiN ceramic with high heat conductivity crucible, includes the following steps：
S1, composite powder grinding：By 65-80 parts of high-purity a phase silicon nitride powder, 14-18 parts of magnesia and 3-5 parts of adhesive mixing, add
Enter 10-18 parts of alcohol and make solvent, slurry is ground by sand mill after being sufficiently mixed, by mist projection granulating, obtains pelletizing；
S2, crucible molding：The pelletizing that will be obtained is formed crucible with cold isostatic compaction equipment；
S3, surface treatment：Crucible biscuit carries out the surface treatment of biscuit, formin embryo after degumming tech；
Ripe base is made in S4：Biscuit in S3 is placed in the crucible of gas pressure sintering furnace, with 50 DEG C/15min progress after vacuumizing
Gas pressure sintering is filled with nitrogen after heating up for the first time and pressurizes, and is continued after being persistently sintered 3 hours with the heating rate of 30 DEG C/15min
Second of heating, sintering are begun to cool after 2 hours, until ripe base is completed.
Further, solids in pulp amount described in S1 is 30%-45%.
Further, grinding meso-position radius described in S1 is 0.5-1.5um.
Further, first time warming temperature described in S4 is 1200-1300 DEG C.
Further, pressurization pressure described in S4 is 5-6MPa.
Further, it is 1.5-2L/min that nitrogen flow rate in nitrogen procedure is filled with described in S4.
Further, second of warming temperature described in S4 is 1800-1850 DEG C.
Embodiment two：By the method that the specified synthesis meal component of table 1, table 2 and each variable repeat embodiment one, in table 3
List test result；
Embodiment three：By the method that the specified synthesis meal component of table 1, table 2 and each variable repeat embodiment one, listed in table 3
Test result；
Example IV：By the method that the specified synthesis meal component of table 1, table 2 and each variable repeat embodiment one, listed in table 3
Test result；
Embodiment five：By the method that the specified synthesis meal component of table 1, table 2 and each variable repeat embodiment one, listed in table 3
Test result；
Comparative example：By the method that the specified synthesis meal component of table 1, table 2 and each variable repeat embodiment one, survey is listed in table 3
Test result；
Table 1：Composite powder component list
| Synthesize meal component | Embodiment one | Embodiment two | Embodiment three | Example IV | Embodiment five | Comparative example |
| High-purity a phase silicon nitride powder | 65 | 68 | 70 | 75 | 80 | 60 |
| Magnesia | 14 | 15 | 16 | 17 | 18 | 10 |
| Adhesive | 3 | 3.5 | 4 | 4.5 | 5 | 8 |
| Alcohol | 10 | 12 | 14 | 16 | 18 | 20 |
Table 2：Each variable component list
| Each variable | Embodiment one | Embodiment two | Embodiment three | Example IV | Embodiment five | Comparative example |
| Solids in pulp amount (%) | 30 | 34 | 38 | 42 | 45 | 20 |
| It grinds meso-position radius (um) | 0.5 | 0.8 | 1 | 1.2 | 1.5 | 2 |
| First time warming temperature (DEG C) | 1200 | 1230 | 1250 | 1280 | 1300 | 1500 |
| It pressurizes pressure (MPa) | 5 | 5.2 | 5.5 | 5.8 | 6 | 7 |
| Nitrogen flow rate (L/min) | 1.5 | 1.6 | 1.7 | 1.8 | 2 | 1 |
| Second of warming temperature (DEG C) | 1800 | 1820 | 1830 | 1840 | 1850 | 1900 |
Table 3：Performance detection table
| Performance | Embodiment one | Embodiment two | Embodiment three | Example IV | Embodiment five | Comparative example |
| Impurity content (ppm) | 100 | 98 | 90 | 85 | 73 | 105 |
| Thermal conductivity (W/m.k) | 50 | 58 | 67 | 72 | 86 | 42 |
| Reuse number | 50 | 53 | 57 | 66 | 72 | 38 |
It will be seen that making pottery according to highly thermally conductive silicon nitride made of step described in embodiment one to embodiment five from table 3
Porcelain crucible, compared with comparative example, impurity content, thermal conductivity and reuse number are significantly improved, and in embodiment five
The ceramic crucible effect of preparation is best.
It should be understood that above description is to illustrate rather than to be limited.By reading foregoing description,
Many embodiments and many applications except provided example all will be apparent for a person skilled in the art.
Therefore, the scope of the present invention should not be determined referring to foregoing description, but should be referring to preceding claims and these power
Benefit requires the full scope of possessed equivalent to determine.For comprehensive purpose, all articles and with reference to including patent Shen
The disclosure that please and announce is all by reference to being incorporated herein.Any of theme disclosed herein is omitted in preceding claims
Aspect is not intended to abandon the body matter, also should not be considered as applicant and the theme is not thought of as to disclosed application
A part of theme.
The series of detailed descriptions listed above only for the application feasible embodiment specifically
Bright, they are not the protection scope to limit the application, all without departing from equivalent implementations made by the application skill spirit
Or change should be included within the scope of protection of this application.
Claims (7)
1. a kind of technique for preparing SiN ceramic with high heat conductivity crucible, it is characterised in that：Include the following steps：
S1, composite powder grinding：By 65-80 parts of high-purity a phase silicon nitride powder, 14-18 parts of magnesia and 3-5 parts of adhesive mixing, add
Enter 10-18 parts of alcohol and make solvent, slurry is ground by sand mill after being sufficiently mixed, by mist projection granulating, obtains pelletizing；
S2, crucible molding：The pelletizing that will be obtained is formed crucible with cold isostatic compaction equipment；
S3, surface treatment：Crucible biscuit carries out the surface treatment of biscuit, formin embryo after degumming tech；
Ripe base is made in S4：Biscuit in S3 is placed in the crucible of gas pressure sintering furnace, with 40-50 DEG C/15min after vacuumizing
Gas pressure sintering is carried out, nitrogen is filled with after heating up for the first time and pressurizes, with the liter of 20-30 DEG C/15min after being persistently sintered 2-3 hours
Warm speed continues second and heats up, and sintering is begun to cool after 1-2 hours, until ripe base is completed.
2. a kind of technique for preparing SiN ceramic with high heat conductivity crucible according to claim 1, it is characterised in that：Described in S1
Solids in pulp amount is 30%-45%.
3. a kind of technique for preparing SiN ceramic with high heat conductivity crucible according to claim 1, it is characterised in that：Described in S1
Grinding meso-position radius is 0.5-1.5um.
4. a kind of technique for preparing SiN ceramic with high heat conductivity crucible according to claim 1, it is characterised in that：Described in S4
First time warming temperature is 1200-1300 DEG C.
5. a kind of technique for preparing SiN ceramic with high heat conductivity crucible according to claim 1, it is characterised in that：Described in S4
Pressurization pressure is 5-6MPa.
6. a kind of technique for preparing SiN ceramic with high heat conductivity crucible according to claim 1, it is characterised in that：Described in S4
Being filled with nitrogen flow rate in nitrogen procedure is 1.5-2L/min.
7. a kind of technique for preparing SiN ceramic with high heat conductivity crucible according to claim 1, it is characterised in that：Described in S4
Second of warming temperature is 1800-1850 DEG C.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810768009.5A CN108863397A (en) | 2018-07-13 | 2018-07-13 | A kind of technique preparing SiN ceramic with high heat conductivity crucible |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810768009.5A CN108863397A (en) | 2018-07-13 | 2018-07-13 | A kind of technique preparing SiN ceramic with high heat conductivity crucible |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN108863397A true CN108863397A (en) | 2018-11-23 |
Family
ID=64301579
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810768009.5A Pending CN108863397A (en) | 2018-07-13 | 2018-07-13 | A kind of technique preparing SiN ceramic with high heat conductivity crucible |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN108863397A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112159236A (en) * | 2020-10-19 | 2021-01-01 | 江苏贝色新材料有限公司 | High-thermal-conductivity silicon nitride ceramic substrate and preparation method thereof |
| CN115784752A (en) * | 2023-01-09 | 2023-03-14 | 上海维安电子股份有限公司 | Method for preparing high-thermal-conductivity silicon nitride ceramic |
| CN116589284A (en) * | 2023-05-20 | 2023-08-15 | 西北工业大学 | High-strength high-purity silicon nitride crucible, and preparation method and application thereof |
Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001181053A (en) * | 1999-12-22 | 2001-07-03 | Sumitomo Electric Ind Ltd | Silicon nitride sintered product and method for producing the same |
| CN103360077A (en) * | 2012-04-01 | 2013-10-23 | 浙江昱辉阳光能源有限公司 | Silicon nitride crucible and preparation method thereof |
| CN104030691A (en) * | 2013-09-09 | 2014-09-10 | 昆山申嘉特种陶瓷有限公司 | Method for preparing air pressure sintering structural member ceramic by taking silicon nitride as raw material |
| CN104098336A (en) * | 2013-04-15 | 2014-10-15 | 中国科学院上海硅酸盐研究所 | Method for preparing high-thermal-conductivity high-strength silicon nitride ceramic |
| CN104744051A (en) * | 2015-03-24 | 2015-07-01 | 烟台同立高科新材料股份有限公司 | Production method of silicon nitride crucible |
| CN104744047A (en) * | 2015-03-04 | 2015-07-01 | 烟台同立高科新材料股份有限公司 | Method for preparing silicon nitride crucible through reactive sintering |
| CN105000890A (en) * | 2015-07-10 | 2015-10-28 | 烟台同立高科新材料股份有限公司 | Preparation method of large-size silicon nitride crucible |
| CN105016738A (en) * | 2014-04-30 | 2015-11-04 | 广东工业大学 | Silicon nitride ceramic and preparation method thereof |
| CN105906348A (en) * | 2016-04-14 | 2016-08-31 | 北京中材人工晶体研究院有限公司 | Compact silicon nitride ceramic lift pipe, preparation method and application thereof |
-
2018
- 2018-07-13 CN CN201810768009.5A patent/CN108863397A/en active Pending
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001181053A (en) * | 1999-12-22 | 2001-07-03 | Sumitomo Electric Ind Ltd | Silicon nitride sintered product and method for producing the same |
| CN103360077A (en) * | 2012-04-01 | 2013-10-23 | 浙江昱辉阳光能源有限公司 | Silicon nitride crucible and preparation method thereof |
| CN104098336A (en) * | 2013-04-15 | 2014-10-15 | 中国科学院上海硅酸盐研究所 | Method for preparing high-thermal-conductivity high-strength silicon nitride ceramic |
| CN104030691A (en) * | 2013-09-09 | 2014-09-10 | 昆山申嘉特种陶瓷有限公司 | Method for preparing air pressure sintering structural member ceramic by taking silicon nitride as raw material |
| CN105016738A (en) * | 2014-04-30 | 2015-11-04 | 广东工业大学 | Silicon nitride ceramic and preparation method thereof |
| CN104744047A (en) * | 2015-03-04 | 2015-07-01 | 烟台同立高科新材料股份有限公司 | Method for preparing silicon nitride crucible through reactive sintering |
| CN104744051A (en) * | 2015-03-24 | 2015-07-01 | 烟台同立高科新材料股份有限公司 | Production method of silicon nitride crucible |
| CN105000890A (en) * | 2015-07-10 | 2015-10-28 | 烟台同立高科新材料股份有限公司 | Preparation method of large-size silicon nitride crucible |
| CN105906348A (en) * | 2016-04-14 | 2016-08-31 | 北京中材人工晶体研究院有限公司 | Compact silicon nitride ceramic lift pipe, preparation method and application thereof |
Non-Patent Citations (1)
| Title |
|---|
| 杨亮亮: "气压烧结氮化硅陶瓷的研究与应用进展", 《陶瓷学报》 * |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112159236A (en) * | 2020-10-19 | 2021-01-01 | 江苏贝色新材料有限公司 | High-thermal-conductivity silicon nitride ceramic substrate and preparation method thereof |
| CN115784752A (en) * | 2023-01-09 | 2023-03-14 | 上海维安电子股份有限公司 | Method for preparing high-thermal-conductivity silicon nitride ceramic |
| CN116589284A (en) * | 2023-05-20 | 2023-08-15 | 西北工业大学 | High-strength high-purity silicon nitride crucible, and preparation method and application thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN105130410B (en) | A kind of preparation method of Fast back-projection algorithm CBN grinding tool vitrified bonds | |
| CN108863397A (en) | A kind of technique preparing SiN ceramic with high heat conductivity crucible | |
| JP2022531868A (en) | High entropy rare earth high toughness tantalate ceramics and its manufacturing method | |
| CN102746013B (en) | Light high-strength silicon nitride bonded silicon carbide refractory and preparation method thereof | |
| CN104529421B (en) | A kind of preparation method of thin brilliant mullite ceramic | |
| CN107160296A (en) | A kind of high intensity Low-temperature Sintering Glass-ceramics bonding agent and preparation method thereof | |
| CN102515720A (en) | Preparation method of transparent alumina ceramic | |
| CN107721424B (en) | Method for preparing YAG transparent ceramic by gel casting | |
| CN101734923A (en) | Aluminum nitride porous ceramic and preparation method thereof | |
| CN102030470A (en) | Gel cast fused quartz crucible and manufacturing method thereof | |
| CN109081335B (en) | Preparation method of phi 800-1000 mm single crystal silicon CZ furnace thermal field graphite material | |
| CN104744051B (en) | A kind of manufacture method of silicon nitride crucible | |
| CN105645782B (en) | The manufacturing method for efficiently exempting from spraying molten silica crucible for polycrystalline silicon ingot casting | |
| CN110218924A (en) | A kind of preparation method of high-performance diamond sintered article | |
| CN101734920B (en) | Titanium nitride porous ceramics and preparation method thereof | |
| CN110759733B (en) | Y0.5Dy0.5Ta0.5Nb0.5O4Tantalum ceramic material and preparation method thereof | |
| CN107986787A (en) | A kind of formula and preparation method of low-temperature sintered ceramics type diamond grinding head | |
| CN111004030A (en) | MgTiO (magnesium-titanium-oxide) powder3Microwave-based dielectric ceramic and preparation method thereof | |
| CN107935598B (en) | Low-temperature sintering method of high-performance silicon carbide ceramic material | |
| CN108558405A (en) | A kind of preparation method of high-compactness high-purity carborundum substrate material | |
| CN103360083B (en) | Preparation method of silicon nitride crucible | |
| CN104892035B (en) | A kind of preparation method of ultra-pure quartz ceramic crucible | |
| CN103265301A (en) | Fire-resistant case for annealing sapphire and production method thereof | |
| CN106830883A (en) | A kind of antistatic composite ceramic material for adding Titanium and preparation method thereof | |
| TW201131056A (en) | Method for manufacturing environmental friendly red bricks by sintering waste solar panel glass and the products thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20181123 |