CN110610853A - Substrate processing apparatus and substrate processing method - Google Patents

Substrate processing apparatus and substrate processing method Download PDF

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Publication number
CN110610853A
CN110610853A CN201910509871.9A CN201910509871A CN110610853A CN 110610853 A CN110610853 A CN 110610853A CN 201910509871 A CN201910509871 A CN 201910509871A CN 110610853 A CN110610853 A CN 110610853A
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CN
China
Prior art keywords
substrate
developing solution
processing apparatus
developer
substrate processing
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CN201910509871.9A
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Chinese (zh)
Inventor
佐田彻也
永田广
麻生丰
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Publication of CN110610853A publication Critical patent/CN110610853A/en
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0035—Multiple processes, e.g. applying a further resist layer on an already in a previously step, processed pattern or textured surface
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/06—Silver salts
    • G03F7/063—Additives or means to improve the lithographic properties; Processing solutions characterised by such additives; Treatment after development or transfer, e.g. finishing, washing; Correction or deletion fluids
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70933—Purge, e.g. exchanging fluid or gas to remove pollutants
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67057—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing with the semiconductor substrates being dipped in baths or vessels
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Atmospheric Sciences (AREA)
  • Environmental & Geological Engineering (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)

Abstract

The invention provides a technique capable of improving the uniformity of development. The substrate processing apparatus of an embodiment includes a conveying mechanism, a developing solution tank, and a supply nozzle. The conveying mechanism smoothly conveys the substrate on which the exposed photoresist film is formed on the surface. The developing solution tank immerses the substrate conveyed by the conveying mechanism in a developing solution. The supply nozzle supplies the developing solution to the substrate conveyed to the outside from the developing solution in the developing solution tank.

Description

Substrate processing apparatus and substrate processing method
Technical Field
The present invention relates to a substrate processing apparatus and a substrate processing method.
Background
Patent document 1 discloses a technique of supplying a developing solution to a surface of a substrate having an exposed photoresist film on the surface while the substrate is advected by a roller conveying mechanism.
Documents of the prior art
Patent document
Patent document 1: japanese patent laid-open publication No. 2012-124309
Disclosure of Invention
Technical problem to be solved by the invention
The invention provides a technique for improving the uniformity of development.
Technical solution for solving technical problem
A substrate processing apparatus according to an aspect of the present invention includes a conveying mechanism, a developer tank, and a supply nozzle. The conveying mechanism smoothly conveys the substrate on which the exposed photoresist film is formed on the surface. The developing solution tank immerses the substrate conveyed by the conveying mechanism in a developing solution. The supply nozzle supplies the developing solution to the substrate conveyed to the outside from the developing solution in the developing solution tank.
Effects of the invention
According to the invention, the developing uniformity can be improved.
Drawings
Fig. 1 is a schematic diagram showing a schematic configuration of a substrate processing apparatus according to an embodiment.
Fig. 2 is a schematic view showing substrate conveyance by the roller conveying mechanism of the embodiment.
Fig. 3 is a schematic diagram showing a schematic configuration of a developing unit according to the embodiment.
Fig. 4 is a schematic diagram showing a schematic configuration of a part of the developing processing section according to the embodiment.
Fig. 5 is a schematic diagram showing a schematic configuration of the rinse liquid supply nozzle according to the embodiment.
Fig. 6 is a flowchart illustrating the procedure of the development processing according to the embodiment.
Fig. 7 is a schematic diagram illustrating a rinsing process of the embodiment.
Fig. 8 is a schematic diagram showing a schematic configuration of a liquid accumulation forming portion according to a modification of the embodiment.
Description of the reference numerals
1 substrate processing apparatus
40 developing unit
44 roller conveying mechanism (conveying mechanism)
50 developing treatment part
51 rinse treatment part
52 drying treatment part
60 developer tank
61 first supply nozzle (supply nozzle)
62 second nozzle (adjusting nozzle)
63 third supply nozzle
64 air knife (air exhaust part)
75 rinse liquid supply nozzle
75a flushing liquid receiving part
76 liquid accumulation forming part.
Detailed Description
Hereinafter, embodiments of the substrate processing apparatus and the substrate processing method disclosed in the present application will be described in detail with reference to the drawings. Further, the substrate processing apparatus and the substrate processing method disclosed by the embodiments shown below are not limited.
< integral Structure >
Referring to fig. 1, a substrate processing apparatus 1 according to an embodiment is described. Fig. 1 is a schematic diagram showing a schematic configuration of a substrate processing apparatus 1 according to an embodiment.
The substrate processing apparatus 1 comprises a cassette station 2, a first processing station 3, an interface station 4, a second processing station 5 and a control device 6.
A cassette C for accommodating a plurality of glass substrates S (hereinafter referred to as "substrates S") is placed on the cassette station 2. The box station 2 comprises: a mounting table 10 on which a plurality of cartridges C can be mounted; and a transport mechanism 11 for transporting the substrate S between the cassette C and the first processing station 3, and between the second processing station 5 and the cassette C.
The conveying mechanism 11 includes a conveying arm 11 a. The transport arm 11a is movable in the horizontal direction and the vertical direction, and is rotatable about a vertical axis.
The first processing station 3 performs a process including applying a photoresist to the substrate S. The first treatment station 3 includes an excimer UV irradiation unit (e-UV)20, a scrubbing unit (SCR)21, a preheating unit (PH)22, a bonding unit (AD)23, and a first cooling unit (COL) 24. The units 20-24 are arranged in the direction from the cassette station 2 to the interface station 4. Specifically, the excimer UV irradiation unit 20, the scrub unit 21, the preheating unit 22, the bonding unit 23, and the first cooling unit 24 are arranged in this order.
In addition, the first processing station 3 includes a photoresist coating unit (CT)25, a decompression drying unit (DP)26, a first heating unit (HT)27, and a second cooling unit (COL) 28. The units 25 to 28 are arranged in the order of the photoresist coating unit 25, the decompression drying unit 26, the first heating unit 27, and the second cooling unit 28 in the direction from the first cooling unit 24 to the interface station 4. Further, the first processing station 3 includes a roller conveying mechanism (refer to fig. 2)29 and a conveying mechanism 30.
The excimer UV irradiation unit 20 irradiates the substrate S with ultraviolet rays from an ultraviolet lamp that emits ultraviolet rays, and removes organic substances attached to the substrate S.
The scrub unit 21 supplies a cleaning liquid (e.g., deionized water (DIW)) to the substrate S from which the organic substances are removed, and cleans the surface of the substrate S using a cleaning member such as a brush. In addition, the scrub unit 21 dries the cleaned substrate S using a blower or the like.
The preheating unit 22 further heats the substrate S dried by the scrub unit 21 to further dry the substrate S.
The bonding unit 23 blows Hexamethyldisilazane (HMDS) to the dried substrate S to perform hydrophobization on the substrate S.
The first cooling unit 24 cools the substrate S by blowing cold air to the substrate S subjected to the hydrophobization processing.
The photoresist coating unit 25 supplies a photoresist solution to the cooled substrate S to form a photoresist film on the substrate S.
The reduced-pressure drying unit 26 dries the photoresist film formed on the substrate S in a reduced-pressure atmosphere.
The first heating unit 27 heats the substrate S on which the photoresist film is dried, and removes a solvent and the like contained in the photoresist film.
The second cooling unit 28 blows a cool air to the substrate S from which the solvent and the like are removed to cool the substrate S.
Here, the roller conveying mechanism 29 will be described with reference to fig. 2. Fig. 2 is a schematic diagram showing substrate conveyance by the roller conveyance mechanism 29 according to the embodiment.
The roller conveying mechanism 29 includes a plurality of rollers 29a and a plurality of driving devices 29 b. The roller conveying mechanism 29 rotates the roller 29a by the driving device 29b, and conveys the substrate S in accordance with the rotation of the roller 29 a. That is, the roller conveying mechanism 29 conveys the substrate S advectively. The driving device 29b is, for example, an electric motor.
As indicated by an arrow L in fig. 1, the roller conveying mechanism 29 conveys the substrate S from the excimer UV irradiation unit 20 to the first cooling unit 24. In addition, as indicated by an arrow M in fig. 1, the roller conveying mechanism 29 conveys the substrate S from the first heating unit 27 to the second cooling unit 28.
Returning to fig. 1, the conveying mechanism 30 includes a conveying arm 30 a. The transport arm 30a is movable in the horizontal direction and the vertical direction, and is rotatable about a vertical axis.
The conveying mechanism 30 conveys the substrate S from the first cooling unit 24 to the photoresist coating unit 25. The conveying mechanism 30 conveys the substrate S from the photoresist coating unit 25 to the reduced-pressure drying unit 26. Further, the conveying mechanism 30 conveys the substrate S from the reduced-pressure drying unit 26 to the first heating unit 27. The transport mechanism 30 may have a plurality of transport arms, or may have different transport arms that transport the substrate S between the units.
At the interface station 4, the substrate S on which the photoresist film is formed is conveyed from the first processing station 3 to the external exposure device 8 and the second processing station 5. The interface station 4 includes a conveying mechanism 31 and a rotary table (RS) 32.
The external exposure device 8 includes an external device block 8A and an exposure device 8B. The external device block 8A removes the photoresist film on the outer periphery of the substrate S by a peripheral exposure apparatus (EE). In addition, the external device block 8A writes predetermined information on the substrate S exposed in the circuit pattern by the exposure device 8B by a stamper (TITLER).
The exposure device 8B exposes the photoresist film using a photomask having a pattern corresponding to the circuit pattern.
The conveying mechanism 31 includes a conveying arm 31 a. The transport arm 31a is movable in the horizontal direction and the vertical direction, and is rotatable about a vertical axis.
The transport mechanism 31 transports the substrate S from the second cooling unit 28 to the rotary table 32. The transfer mechanism 31 transfers the substrate S from the turntable 32 to the peripheral exposure apparatus of the external apparatus block 8A, and transfers the substrate S from which the photoresist film on the outer peripheral portion is removed to the exposure apparatus 8B.
The conveying mechanism 31 conveys the substrate S exposed to the circuit pattern from the exposure device 8B to the stamper of the external device block 8A. Then, the conveying mechanism 31 conveys the substrate S, on which the predetermined information is written, from the stamper to a developing unit (DEV)40 of the second processing station 5.
The second processing station 5 performs a process including development. The second process station 5 includes a developing unit 40, a second heating unit (HT)41, a third cooling unit (COL)42, an inspection unit (IP)43, and a roller conveying mechanism 44 (refer to fig. 2). The units 40 to 43 are arranged in the direction from the interface station 4 to the cartridge station 2 in the order of the developing unit 40, the second heating unit 41, the third cooling unit 42, and the inspection unit 43.
The developing unit 40 develops the exposed photoresist film using a developing solution. The developing unit 40 removes the developer on the substrate S on which the photoresist film is developed with a rinse solution, and dries the rinse solution. Further, the structure of the developing unit 40 will be described later.
The second heating unit 41 heats the substrate S after the rinse solution is dried, and removes the solvent and the rinse solution remaining in the photoresist film.
The third cooling unit 42 blows a cool air to the substrate S from which the solvent and the rinse liquid have been removed to cool the substrate S.
The inspection unit 43 performs an inspection such as a limit dimension method (CD) for measuring a photoresist pattern (line) on the substrate S after cooling.
The substrate S inspected by the inspection unit 43 is conveyed from the second process station 5 to the cassette C of the cassette station 2 by the conveying arm 11a of the conveying mechanism 11.
The roller conveying mechanism 44 has the same structure as the roller conveying mechanism 29 in the first processing station 3, and the description thereof is omitted. The roller conveying mechanism 44 conveys the substrate S from the developing unit 40 to the inspection unit 43 as indicated by an arrow N. That is, the roller conveying mechanism 44 advectively conveys the substrate S on the surface of which the exposed photoresist film is formed.
The control device 6 is, for example, a computer, and includes a control unit 6A and a storage unit 6B. The storage unit 6B is implemented by, for example, a semiconductor Memory element such as a RAM (Random Access Memory) or a Flash Memory, or a storage device such as a hard disk or an optical disk.
The control Unit 6A includes a microcomputer including a CPU (Central Processing Unit), a ROM (Read Only Memory), a RAM (RAM), an input/output port, and the like, and various circuits. The CPU of the microcomputer reads and executes the program stored in the ROM, thereby controlling the stations 2 to 5.
The program may be stored in a computer-readable storage medium, and may be installed from the storage medium to the storage unit 6B of the control device 6. Examples of the computer-readable storage medium include a Hard Disk (HD), a Flexible Disk (FD), an optical disk (CD), a magneto-optical disk (MO), and a memory card.
< developing unit >
Next, the developing unit 40 will be described with reference to fig. 3. Fig. 3 is a schematic diagram showing a schematic configuration of the developing unit 40 according to the embodiment. In fig. 3, a part of the structure of the roller conveying mechanism 44 and the like is omitted. Next, the surface direction of the substrate S orthogonal to the conveying direction of the substrate S is defined as the width direction. Further, the width direction is parallel to the rotation axis of the roller 44a of the roller conveying mechanism 44.
The developing unit 40 includes a developing process portion 50, a rinsing process portion 51, and a drying process portion 52. The developing process section 50, the rinsing process section 51, and the drying process section 52 are arranged in the order of the developing process section 50, the rinsing process section 51, and the drying process section 52 along the conveying direction of the substrate S. Although the detailed description is omitted, the developing Unit 40 includes, for example, an FFU (Fan Filter Unit), an exhaust mechanism, and the like in order to suppress scattering of the developer.
The developing unit 50 performs a developing process on the substrate S conveyed into the chamber 50 a. The developing process portion 50 includes a developer tank 60, a first supply nozzle 61, a second supply nozzle 62, a third supply nozzle 63, and an air blade 64.
The developer tank 60 is disposed on the upstream side in the conveying direction of the substrate S, i.e., on the interface station 4 (see fig. 1) side. A predetermined amount of developer is stored in the developer tank 60. As shown in fig. 4, a roller 44a of the roller conveying mechanism 44 is provided in the developer tank 60. Fig. 4 is a schematic diagram showing a schematic configuration of a part of the developing process section 50 according to the embodiment.
In the developer tank 60, a part of the roller 44a is disposed in such a manner that its upper end is lower than the liquid surface of the developer. Therefore, the substrate S is conveyed by the roller conveying mechanism 44 while being immersed in the developing solution tank 60. That is, in the developer tank 60, the substrate S conveyed by the roller conveying mechanism 44 (an example of the conveying mechanism) is immersed in the developer to be subjected to the liquid immersion treatment. Thereby, in the substrate S, development is started.
The roller conveying mechanism 44 is provided to be able to convey the substrate S conveyed in the conveying direction of the substrate S to the outside from the developer in the developer tank 60 after the substrate S is immersed in the developer tank 60. Specifically, the roller conveying mechanism 44 immerses the substrate S in the developer tank 60 in a low-front and high-rear state at a first predetermined angle, and thereafter conveys the substrate S while keeping it horizontal. Then, the roller conveying mechanism 44 conveys the substrate S outward from the developer in the developer tank 60 in a front-high and rear-low state at a second predetermined angle.
The front-low-rear-high state is a state in which the height of the front side of the substrate S in the conveyance direction of the substrate S is lower than the height of the rear side. Further, the substrate S being in the front-low rear-high state includes a case where a part of the substrate S is in the front-low rear-high state. The front-high and rear-low state is a state in which the height of the front side of the substrate S in the conveyance direction of the substrate S is higher than the height of the rear side. Further, the substrate S being in the front-high rear-low state includes a case where a part of the substrate S is in the front-high rear-low state.
The first predetermined angle and the second predetermined angle are each a predetermined angle, and are angles for suppressing occurrence of development unevenness on the substrate S. The second predetermined angle is an angle at which a part of the developing solution adhering to the substrate S may return to the inside of the developing solution tank 60 by its own weight when the substrate S is conveyed outward from the developing solution in the developing solution tank 60.
Therefore, the roller 44a (hereinafter, referred to as "roller 44 b") disposed in front of the second supply nozzle 62 in the conveying direction of the substrate S is disposed at a position higher than the liquid level of the developer in the developer tank 60. Specifically, the roller 44b is provided at a position higher than the roller 44a that horizontally conveys the substrate S to which the developing solution is supplied by the second supply nozzle 62, for example, the roller 44a on the downstream side in the conveying direction of the substrate S from the second supply nozzle 62 in fig. 4.
The developing solution tank 60 is provided with a first pressing roller 65 that suppresses floating of the substrate S immersed in the developing solution. Further, the first pressing roller 65 may be provided at a position immediately after the substrate S is impregnated with the developing solution.
In addition, a second pressing roller 66 is provided above the roller 44b in the developer tank 60. The second pressing roller 66 suppresses the floating of the substrate S and the contact of the substrate S with the second supply nozzle 62.
The developer tank 60 is connected to the developer discharge passage 68 a. The developer discharge passage 68a is provided with a flow rate control valve 68b and an opening/closing valve 68 c. The flow control valve 68b controls the amount of the developer in the developer tank 60 to be a predetermined amount, that is, the height of the liquid surface of the developer to be a predetermined height set in advance. Specifically, the flow control valve 68b controls the opening degree in accordance with the flow rate of the developer discharged from the first supply nozzle 61 and the flow rate of the developer supplied from the second supply nozzle 62 and overflowing the substrate S. The flow control valve 68b may be controlled based on a signal from a sensor that detects the height of the liquid surface of the developer in the developer tank 60.
The developer discharged from the developer tank 60 is collected by a defoaming process or the like, and is stored in the developer supply source 70 (see fig. 3). The developing processing unit 50 is not limited to the developer tank 60, and a recovery passage (not shown) having a recovery tray or the like for recovering the developer or the like overflowing from the substrate S into the chamber 50a is provided, and the developer recovered by the recovery passage is similarly subjected to a defoaming process or the like and accumulated in the developer supply source 70.
The developer discharge passage 68a and the recovery passage are formed by connecting pipes and the like so that the developer does not scatter. Further, a cover (not shown) or the like is provided in the developer discharge passage 68a and the recovery passage so that the developer does not scatter.
The first supply nozzle 61 extends in the width direction. A slit-shaped discharge port (not shown) is formed in the first supply nozzle 61 in the width direction. The first supply nozzle 61 is disposed above the developer tank 60. Specifically, the first supply nozzle 61 is disposed above a portion where the substrate S enters the liquid surface of the developing solution.
The first supply nozzle 61 (an example of an adjustment nozzle) discharges the developer to a boundary between the surface of the developer and the substrate S, which is formed when the substrate S is immersed in the developer tank 60. The first supply nozzle 61 discharges the developer so that the liquid level of the developer coincides with the boundary of the substrate S.
The first supply nozzle 61 discharges the developer from a discharge port formed in the width direction to make the liquid surface of the developer coincide with the boundary of the substrate S in the width direction. That is, the first supply nozzle 61 stabilizes the boundary between the surface of the developer and the substrate S in the width direction.
The second supply nozzle 62 extends in the width direction. The second supply nozzle 62 is formed with a slit-shaped discharge port (not shown) in the width direction. The second supply nozzle 62 is disposed above the developer tank 60. The second supply nozzle 62 is disposed downstream of the first supply nozzle 61 in the conveyance direction of the substrate S. Specifically, the second supply nozzle 62 is provided at a position which is spaced downstream by a distance of one substrate S from the first supply nozzle 61 in the conveyance direction of the substrate S. This can shorten the length of the developer tank 60 in the substrate S conveying direction, and can use a small developer tank 60.
The second supply nozzle 62 supplies the developing solution to the substrate S to perform the solution supply process. That is, the second supply nozzle 62 (an example of a supply nozzle) supplies the developing solution to the substrate S conveyed to the outside from the developing solution in the developing solution tank 60.
Returning to fig. 3, the third supply nozzle 63 is provided extending in the width direction. The third supply nozzle 63 has a slit-shaped discharge port (not shown) formed in the width direction. The third supply nozzle 63 is provided on the downstream side of the second supply nozzle 62 in the conveyance direction of the substrate S. Specifically, the third supply nozzle 63 is provided at a position spaced downstream from the second supply nozzle 62, for example, by a size smaller than or equal to one substrate S in the conveyance direction of the substrate S. The third supply nozzle 63 discharges the developer to the substrate S supplied by the second supply nozzle 62, and replaces the developer. That is, the third supply nozzle 63 performs the replacement process.
The first supply nozzle 61, the second supply nozzle 62, and the third supply nozzle 63 are supplied with the developer from the developer supply source 70 via the developer supply path 69 a. The developer supply path 69a is provided with flow rate control valves 69b to 69d, an on-off valve 69e, and the like, and controls the flow rate of the developer discharged from the supply nozzles 61 to 63.
The air knife 64 extends in the width direction. A slit-shaped discharge port (not shown) is formed in the air knife 64 in the width direction. The air knife 64 is disposed downstream of the third supply nozzle 63 in the conveyance direction of the substrate S. Specifically, the air knife 64 is disposed at the downstream end of the developing process portion 50 in the conveying direction of the substrate S.
The air knife 64 (an example of an air discharge portion) discharges air to the developing solution supplied to the substrate S, and removes the developing solution supplied to the substrate. That is, the air knife 64 blows air from the discharge port to generate an air curtain (air current), and the developing solution supplied to the substrate S is removed by the generated air curtain.
The air knife 64 is supplied with compressed air from an air supply source 72 via an air supply passage 71 a. The air supply passage 71a is provided with a flow rate control valve 71b and an opening/closing valve 71 c.
Further, the roller 44a provided on the downstream side of the developing process section 50 in the conveying direction of the substrate S becomes higher toward the air knife 64 side. Thereby, the substrate S is in a state of high front and low rear at the downstream side of the developing process section 50. Therefore, when the liquid is removed by the air curtain, the developing solution supplied to the substrate S can be reduced, and the developing solution can be easily removed by the air curtain. The developer removed from the liquid is collected by the collection passage.
The rinse processing unit 51 performs a rinse process of cleaning the substrate S developed by the developing unit 50 with a rinse liquid. The rinse processing unit 51 includes a rinse liquid supply nozzle 75 and a liquid pool forming unit 76.
The rinse liquid supply nozzle 75 extends in the width direction. The rinse liquid supply nozzle 75 is provided at the upstream end of the rinse processing unit 51 in the substrate S conveyance direction. The rinse liquid supply nozzle 75 is disposed adjacent to the air knife 64. That is, the rinse liquid supply nozzle 75 is provided immediately after the air knife 64 in the conveying direction of the substrate S.
The rinse liquid is supplied from the rinse liquid supply source 77 to the rinse liquid supply nozzle 75 through the rinse liquid supply passage 78 a. The rinse liquid supply passage 78a is provided with a flow rate control valve 78b and an opening/closing valve 78 c.
As shown in FIG. 5, the rinse liquid supply nozzle 75 includes a rinse liquid receiver 75a, and discharges the rinse liquid to the rinse liquid receiver 75 a. The rinse liquid receptacle 75a is plate-shaped and extends in the width direction. The rinse liquid receiver 75a reduces the potential head of the rinse liquid discharged from the rinse liquid supply nozzle 75, and allows the rinse liquid to flow downward. Fig. 5 is a schematic diagram showing a schematic configuration of the rinse liquid supply nozzle 75 according to the embodiment. The rinse liquid received in the rinse liquid receiving portion 75a flows into the developing treatment portion 50 or is scattered.
The liquid accumulation forming portion 76 is provided between the rollers 44a and extends in the width direction. The liquid accumulation forming portion 76 is provided at the upstream end of the rinse processing portion 51 in the substrate S transport direction, similarly to the rinse liquid supply nozzle 75. A part of the liquid accumulation forming portion 76 protrudes into the developing processing portion 50. The liquid accumulation forming portion 76 is provided below the rinse liquid receiving portion 75 a.
The upper surface 76a of the liquid accumulation forming portion 76 is inclined so that the downstream side in the transport direction of the substrate S becomes higher. The rinse liquid that has collided with the rinse liquid receiving portion 75a and has a reduced potential head forms a liquid pool on the upper surface 76a of the liquid pool forming portion 76.
The liquid accumulation forming section 76 forms a liquid accumulation of the rinse liquid on the downstream side of the air knife 64 in the transport direction of the substrate S. The accumulated liquid is formed along the width direction. The length of the liquid accumulation in the width direction is narrower than the length of the substrate S in the width direction. The substrate S conveyed by the roller conveying mechanism 44 enters the liquid pool. The liquid accumulation forming section 76 forms liquid accumulation in such a manner that the substrate S enters the liquid accumulation immediately after the liquid accumulation.
Returning to fig. 3, the drying processing unit 52 performs a drying process on the substrate S cleaned by the cleaning processing unit 51.
< development processing >
The substrate processing apparatus of the comparative example, which did not perform the development by the liquid immersion process in the developing solution tank 60 of the embodiment, discharges the developing solution from the supply nozzle to the substrate having the exposed photoresist film formed on the surface thereof, supplies the developing solution to the substrate, and starts the development process. It is known that the development of the substrate is often carried out immediately after the developer adheres to the substrate.
The substrate processing apparatus of the comparative example swirls the flow of the developing solution discharged from the supply nozzle at the start of supply at the front end of the substrate to generate a convective vortex. When the eddy current is generated at the leading end of the substrate for a long time, the development of the leading end of the substrate progresses faster than the development of other portions. Therefore, in the substrate processing apparatus of the comparative example, development unevenness occurs on the substrate, and the uniformity of development is lowered. Further, when the distance between the leading end of the substrate and the supply nozzle becomes longer, the influence of the vortex is reduced.
Therefore, in the substrate processing apparatus of the comparative example, the developer is supplied while performing high-speed conveyance in which the conveyance speed of the substrate is increased, so that the distance between the tip of the substrate and the supply nozzle can be increased in a short time, and the influence of the eddy current can be reduced.
However, when high-speed conveyance is performed, a conveyance path for developing the substrate becomes long, and the substrate processing apparatus becomes large. In the substrate processing apparatus of the comparative example, it is also considered that the substrate is conveyed at a high speed only when the developing solution is supplied to the substrate, and then the conveying speed is reduced. However, in this case, a speed change region of one substrate size is required, and the substrate processing apparatus becomes large.
In view of the above, the substrate processing apparatus 1 of the embodiment performs the immersion process, the liquid supply process, the replacement process, the liquid removal process, the rinsing process, and the drying process as shown in fig. 6 while conveying the substrate S by the roller conveying mechanism 44. Fig. 6 is a flowchart illustrating the procedure of the development processing according to the embodiment.
When the substrate processing apparatus 1 performs the developing process, the substrate S is conveyed at a predetermined conveying speed by the roller conveying mechanism 44. The predetermined conveyance speed is a predetermined speed and is a constant speed. The predetermined conveyance speed is a speed lower than a conveyance speed at the time of high-speed conveyance capable of reducing the influence of the eddy current.
The substrate processing apparatus 1 sets the conveyance speed when the developing solution is supplied to the substrate S by the second supply nozzle 62 to the same conveyance speed, that is, a predetermined conveyance speed after the supply. Thus, the substrate processing apparatus 1 can shorten the transport path of the substrate S and perform the developing process without providing a speed change region. Therefore, the substrate processing apparatus 1 can be miniaturized.
The substrate processing apparatus 1 performs the immersion processing on the substrate S on which the photoresist film is exposed (S10). Specifically, the substrate processing apparatus 1 starts the development by immersing the substrate S in the developer tank 60. Therefore, in the substrate processing apparatus 1, no eddy current occurs at the tip of the substrate at the start of development as in the substrate processing apparatus of the comparative example. Therefore, the substrate processing apparatus 1 can improve the uniformity of development.
The substrate processing apparatus 1 immerses the substrate S in the developer in a state of being low before and high after. Thus, the substrate processing apparatus 1 can suppress scattering of the developer when the substrate S is immersed in the developer, and can suppress the start of development by the scattered developer. Therefore, the substrate processing apparatus 1 can improve the uniformity of development.
Further, the substrate processing apparatus 1 discharges the developer from the first supply nozzle 61 to the boundary between the surface of the developer in the developer tank 60 and the substrate S. Thus, the substrate processing apparatus 1 can stabilize the boundary between the surface of the developing solution and the substrate S in the width direction. Therefore, the substrate processing apparatus 1 can suppress the occurrence of development unevenness in the width direction, and can improve the uniformity of development.
In the substrate processing apparatus 1, the substrate S is conveyed while being pressed by the first pressing roller 65 so as not to float from the developer in the developer tank 60. Therefore, the substrate processing apparatus 1 can stabilize the conveyance of the substrate S in the developing solution tank 60.
After that, the substrate processing apparatus 1 conveys the substrate S outward from the developing solution in the developing solution tank 60. At this time, the substrate processing apparatus 1 transports the substrate S from the developer in the developer tank 60 to the outside in a state of being high before and low after the substrate S. As a result, a part of the developer adhering to the substrate S returns to the developer tank 60 by its own weight, and a thin film of the developer is formed on the substrate S. Therefore, the substrate processing apparatus 1 can reduce the amount of the developing solution taken out from the developing solution tank 60.
In this manner, the substrate processing apparatus 1 performs a step of immersing the substrate S, on the surface of which the exposed photoresist film is formed, which is transported advectively, in the developer tank 60.
The substrate processing apparatus 1 performs the supply process for the substrate S conveyed to the outside from the developing solution in the developing solution tank 60 (S11). Specifically, the substrate processing apparatus 1 supplies the developing solution to the substrate S conveyed to the outside of the developing solution in the developing solution tank 60 by the second supply nozzle 62, and supplies the developing solution to the substrate S. Thus, the substrate processing apparatus 1 can replace a part of the developer adhering to the substrate S with a new developer, thereby improving the uniformity of development.
Further, the substrate processing apparatus 1 starts development by performing the immersion processing. Therefore, even when the eddy current is generated at the tip of the substrate S when the supply of the developing solution to the substrate S is started, the substrate processing apparatus 1 can reduce the influence of the eddy current at the tip of the substrate S and suppress the occurrence of the development unevenness.
As described above, the substrate processing apparatus 1 performs the step of supplying the developing solution to the substrate S conveyed to the outside from the developing solution in the developing solution tank 60.
The substrate processing apparatus 1 performs the replacement process on the substrate S conveyed in the supplied state (S12). Specifically, the developing unit 40 supplies the developer to the supplied base sheet S by the third supply nozzle 63, and replaces a part of the supplied developer with a new developer. Thereby, the substrate processing apparatus 1 can promote development and improve the uniformity of development.
The substrate processing apparatus 1 removes the developing solution supplied to the substrate S by the air curtain generated by the air knife 64 while the substrate processing apparatus 1 conveys the substrate S in a state of being high in front and low in back at the downstream end of the developing treatment section 50 in the conveying direction of the substrate S with respect to the conveyed substrate S. The substrate processing apparatus 1 can remove the developing solution with a small air flow amount of the air curtain by removing the solution with the air curtain while conveying the substrate S in a high state and a low state.
The substrate processing apparatus 1 performs the rinsing process on the substrate S subjected to the liquid removal (S14). Specifically, as shown in fig. 7, the substrate processing apparatus 1 discharges the rinse liquid from the rinse liquid supply nozzle 75, and lowers the potential head of the rinse liquid by the rinse liquid receiving unit 75a to flow the rinse liquid downward. Then, the substrate processing apparatus 1 forms a liquid pool of the rinse liquid in the liquid pool forming portion 76. Fig. 7 is a schematic diagram illustrating a rinsing process of the embodiment. In fig. 7, the developing solution supplied to the surface of the substrate S is denoted by reference numeral "D" for the sake of explanation.
Then, the substrate processing apparatus 1 immediately introduces the substrate S, which has been removed by the air knife 64, into the liquid pool of the rinse liquid formed in the liquid pool forming portion 76. Thereby, the developing unit 40 washes the substrate S with the rinse liquid, and ends the development.
The substrate processing apparatus 1 can quickly rinse the substrate S subjected to liquid removal with the rinse liquid by immediately introducing the substrate S subjected to liquid removal by the air knife 64 into the liquid pool, thereby suppressing the occurrence of liquid removal spots. Further, the substrate processing apparatus 1 can shorten the time until the cleaning by the rinse liquid at the tip of the substrate S becomes a steady state by causing the substrate S to enter the liquid pool of the rinse liquid. Therefore, the substrate processing apparatus 1 can suppress the occurrence of the liquid removing unevenness at the tip of the substrate S. Therefore, the substrate processing apparatus 1 can improve the uniformity of development.
Returning to fig. 6, the substrate processing apparatus 1 performs a drying process on the substrate S subjected to the rinsing process (S15).
< modification example >
Next, a modified example of the present embodiment will be described.
The substrate processing apparatus 1 of the modification makes the transport speed higher than the predetermined transport speed when the rinsing process is performed in the predetermined range of the front end of the substrate S. The predetermined range is a predetermined range, for example, a range of 50mm to 300mm from the front end of the substrate S. Thus, the substrate processing apparatus 1 according to the modified example can suppress the occurrence of the liquid removing unevenness at the tip of the substrate S where the liquid removing unevenness is likely to occur.
As shown in fig. 8, the substrate processing apparatus 1 of the modification includes a cylindrical or columnar roller as the liquid pool forming portion 80. Fig. 8 is a schematic diagram showing a schematic configuration of the liquid accumulation forming portion 80 according to a modification of the embodiment. The liquid accumulation forming portion 80 can rotate about a rotation axis in the width direction. The liquid accumulation forming section 80 forms a liquid accumulation of the same rinse liquid as that of the liquid accumulation forming section 76 described above. Thus, the substrate processing apparatus 1 according to the modification can easily adjust the position of the liquid pool with respect to the transport path of the substrate S, for example, the inclination angle of the transport path.
< Effect >
The substrate processing apparatus 1 includes: a roller conveyance mechanism 44 (an example of a conveyance mechanism) that advectively conveys the substrate S having the photoresist film exposed on the surface thereof; a developing solution tank 60 that immerses the substrate S conveyed by the roller conveying mechanism 44 in a developing solution; and a second supply nozzle 62 (an example of a supply nozzle) that supplies the developing solution to the substrate S conveyed to the outside from the developing solution in the developing solution tank 60.
In other words, the substrate processing method includes: a step of immersing the substrate S, on the surface of which the exposed photoresist film is formed, being transported advectively in a developing solution tank 60; and a step of supplying the developing solution to the substrate S conveyed to the outside from the developing solution in the developing solution tank 60.
Thus, the substrate processing apparatus 1 can prevent the generation of the eddy current of the developing solution at the tip of the substrate S at the start of development, and suppress the generation of the development unevenness. Therefore, the substrate processing apparatus 1 can improve the uniformity of development.
In addition, the substrate processing apparatus 1 can suppress the occurrence of development unevenness without conveying the substrate S at a high conveying speed. Therefore, the substrate processing apparatus 1 can shorten the transport path of the substrate S. Further, the substrate processing apparatus 1 can suppress the occurrence of development unevenness without providing a shift range required for changing the transport speed. Therefore, the substrate processing apparatus 1 can be realized.
The substrate processing apparatus 1 includes a first supply nozzle 61 (an example of an adjustment nozzle) that discharges the developer to a boundary between the surface of the developer and the substrate, which is formed when the substrate S is immersed in the developer tank 60.
Thus, the substrate processing apparatus 1 can align the liquid surface of the developer in the developer tank 60 with the boundary of the substrate S, and can suppress development unevenness. Therefore, the substrate processing apparatus 1 can improve the uniformity of development.
The second supply nozzle 62 is disposed above the developer tank 60. Thus, the substrate processing apparatus 1 can collect the developer discharged from the second supply nozzle 62 and overflowing the substrate S in the developer tank 60.
The roller conveying mechanism 44 immerses the substrate S in the developer tank 60 in a state of being low in front and high in back. Thus, the substrate processing apparatus 1 can suppress scattering of the developer when the substrate S is immersed in the developer tank 60, and can suppress adhesion of the scattered developer to the substrate S. Therefore, the substrate processing apparatus 1 can suppress the start of development of the substrate S by the scattered developing solution and suppress the occurrence of development unevenness. Therefore, the substrate processing apparatus 1 can suppress the uniformity of development.
The roller conveying mechanism 44 conveys the substrate S from the developer in the developer tank 60 to the outside in a state of being high before and low after. Thus, the substrate processing apparatus 1 can return a part of the developer adhering to the substrate S into the developer tank 60 by its own weight.
The roller conveyance mechanism 44 sets the conveyance speed when the developing solution is supplied to the substrate S by the second supply nozzle 62 to the same conveyance speed as the conveyance speed after the supply.
Thus, the substrate processing apparatus 1 can improve the uniformity of development without providing a shift region. Therefore, the substrate processing apparatus 1 can be miniaturized.
The substrate processing apparatus 1 includes: an air knife 64 (an example of an air discharge portion) that blows air to the developer supplied to the substrate S to remove the developer supplied to the substrate; and a liquid accumulation forming portion 76 for forming a liquid accumulation of the rinse liquid on the downstream side of the air knife 64 in the transport direction of the substrate S.
Thus, the substrate processing apparatus 1 can shorten the time until the cleaning with the rinse liquid at the tip of the substrate S becomes a stable state. Therefore, the substrate processing apparatus 1 can suppress the occurrence of the liquid removing unevenness at the tip of the substrate S. Therefore, the substrate processing apparatus 1 can improve the uniformity of development.
The effusion forming part 76 forms effusion so that the substrate S enters the effusion immediately after the liquid removal. Thus, the substrate processing apparatus 1 can quickly rinse the substrate S subjected to the liquid removal with the rinse liquid, and can suppress the occurrence of the liquid removal unevenness. Therefore, the substrate processing apparatus 1 can improve the uniformity of development.
The embodiments of the present invention are illustrative in all respects and should not be considered as being limited thereto. In fact, the above-described embodiments can be embodied in various ways. The above-described embodiments may be omitted, replaced, or changed in various ways without departing from the scope and spirit of the appended claims.

Claims (9)

1. A substrate processing apparatus, comprising:
a transport mechanism that advectively transports a substrate having an exposed photoresist film formed on a surface thereof;
a developing solution tank that dips the substrate conveyed by the conveying mechanism in a developing solution; and
a supply nozzle that supplies the developing solution to the substrate conveyed to the outside from the developing solution in the developing solution tank.
2. The substrate processing apparatus according to claim 1, comprising:
and a regulating nozzle that discharges the developer to a boundary between a surface of the developer and the substrate, the boundary being formed when the substrate is immersed in the developer tank.
3. The substrate processing apparatus according to claim 1 or 2, wherein:
the supply nozzle is disposed above the developer tank.
4. The substrate processing apparatus according to any one of claims 1 to 3, wherein:
the conveying mechanism immerses the substrate in the developing solution tank in a state of low front and high back.
5. The substrate processing apparatus according to any one of claims 1 to 4, wherein:
the conveying mechanism conveys the substrate outwards from the developing solution in the developing solution tank in a high-back-low state.
6. The substrate processing apparatus according to any one of claims 1 to 5, wherein:
the conveying mechanism sets the conveying speed when the developing solution is supplied to the substrate by the supply nozzle and the conveying speed after the supply to be the same conveying speed.
7. The substrate processing apparatus according to any one of claims 1 to 6, comprising:
an air discharge unit that blows air to the developer supplied to the substrate to remove the developer supplied to the substrate; and
and a liquid accumulation forming part for forming a liquid accumulation of the rinse liquid at a position downstream of the air discharging part in the substrate conveying direction.
8. The substrate processing apparatus according to claim 7, wherein:
the effusion formation part forms the effusion so that the substrate enters the effusion immediately after liquid removal.
9. A substrate processing method, characterized by: the method comprises the following steps:
immersing the substrate, on the surface of which the exposed photoresist film is formed, being transported advectively in a developing solution tank; and
and supplying a developing solution to the substrate conveyed to the outside from the developing solution in the developing solution tank.
CN201910509871.9A 2018-06-15 2019-06-13 Substrate processing apparatus and substrate processing method Pending CN110610853A (en)

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Application publication date: 20191224