CN110597342A - Laser radar APD voltage type open loop temperature-dependent regulating system - Google Patents
Laser radar APD voltage type open loop temperature-dependent regulating system Download PDFInfo
- Publication number
- CN110597342A CN110597342A CN201911002310.6A CN201911002310A CN110597342A CN 110597342 A CN110597342 A CN 110597342A CN 201911002310 A CN201911002310 A CN 201911002310A CN 110597342 A CN110597342 A CN 110597342A
- Authority
- CN
- China
- Prior art keywords
- voltage
- temperature
- apd
- processor
- open loop
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
- G05F1/10—Regulating voltage or current
- G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is dc
- G05F1/56—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices
- G05F1/565—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor
- G05F1/567—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor for temperature compensation
Abstract
The invention discloses a laser radar APD voltage type open loop temperature-dependent regulation system, which comprises a processor, a temperature acquisition module and a voltage regulation module, wherein the temperature acquisition module acquires the temperature of APD in real time and transmits the temperature to the processor; the voltage regulating module generates an output voltage used as an APD bias voltage, is controlled by the processor, and adjusts an output voltage V of the processor according to a voltage regulating signal of the processorAPDSo that the regulated output voltage VAPDThe bias voltage required by the APD under temperature compensation is the same; the processor receives the temperature signal output by the temperature acquisition module and generates a voltage regulation signal according to the temperature signal. According to the invention, the measurement precision of the laser radar is improved by adjusting along with the temperature, and the sensitivity of the measurement precision of the laser radar to the temperature is reduced. Each module is composed of a low-voltage and digital circuit matched with an integrated chip, the voltage is adjusted stably along with the temperature, the adjusting precision is high, the adjusting voltage ripple is small, and the oscillation in the adjusting process is small.
Description
Technical Field
The invention relates to the technical field of laser radars, in particular to an APD voltage type open-loop temperature-dependent regulating system of a laser radar.
Background
An Avalanche Photodiode (APD) is a p-n junction type light detection diode, and when the APD is applied to a laser receiving circuit of a laser radar, the avalanche multiplication effect of carriers under the breakdown voltage of the APD is utilized to gain and amplify a photoelectric signal so as to improve the detection sensitivity. In practical applications, the change of the environmental temperature greatly affects the characteristics of the APD, and when the temperature rises, the breakdown voltage of the APD also rises, and if the operating voltage (i.e. high voltage) of the APD is not changed, the photoelectric detection performance of the APD is weakened, and the sensitivity is reduced.
At present, the requirement of measurement accuracy of a product (i.e. achieving that an APD works at a constant gain) is generally achieved by controlling the internal temperature of a laser radar, for example, chinese patent with publication number CN201853143U discloses a laser radar temperature control device, which includes a radar, a telescope main barrel, a sensor and a temperature control device, wherein the temperature control device includes a semiconductor refrigerator and a temperature control circuit board, and the temperature control circuit board is electrically connected with the semiconductor refrigerator through a lead terminal. The use of the temperature control device expands the use temperature range of the laser radar, and completely ensures that the temperature control precision is not influenced under the condition that the temperature difference between the inside and the outside reaches 60 ℃. This approach has many drawbacks: the internal temperature of the laser radar is easily interfered by the outside, the temperature regulation has a certain time delay, and the internal temperature regulation needs to consume a large amount of energy (which is even more than several times compared with the main working energy of the laser radar).
In addition, chinese patent publication No. CN109541569A discloses a laser radar PAD temperature compensation system, which collects the temperature of the APD in real time through a temperature collection module, measures the real-time voltage of the APD through a voltage feedback module, compares the real-time voltage with a prestored theoretical voltage corresponding to the real-time temperature, and adjusts a PWM signal for controlling the output voltage of the voltage boost module according to the comparison result, thereby implementing the laser radar APD temperature compensation. In the scheme, the output voltage is adjusted in a mode of adjusting the output duty ratio of the MOS tube by outputting the PWM signal through the processor, the adjusting speed is low, the oscillation is large in the adjusting process, and the voltage output ripple is large. In addition, the circuit structure of the boosting module built by discrete components is very unstable.
Disclosure of Invention
The embodiment of the invention provides a laser radar APD voltage type open loop temperature-dependent regulation system, which improves the measurement precision of a laser radar and reduces the sensitivity of the measurement precision of the laser radar to temperature by temperature-dependent regulation. Each module is composed of a low-voltage and digital circuit matched with an integrated chip, the voltage is adjusted stably along with the temperature, the adjusting precision is high, the adjusting voltage ripple is small, and the oscillation in the adjusting process is small.
In order to solve the technical problem, the invention provides a laser radar APD voltage type open loop temperature-dependent regulation system, which is characterized in that: comprises a processor, a temperature acquisition module and a voltage regulation module,
the temperature acquisition module is used for acquiring the temperature of the APD in real time and transmitting the temperature to the processor;
the voltage regulation module generates an output voltage used as an APD bias voltage, is controlled by the processor, and adjusts an output voltage V of the processor according to a voltage regulation signal of the processorAPDSo that the regulated output voltage VAPDThe bias voltage required by the APD under temperature compensation is the same;
the processor receives the temperature signal output by the temperature acquisition module and generates the voltage regulation signal according to the temperature signal;
the processor realizes logic operation and data processing by running a program.
In a preferred embodiment of the present invention, the processor is an ARM processor.
In a preferred embodiment of the present invention, the voltage adjusting module further comprises an adjustable resistance circuit and a DC-DC boost circuit, wherein the adjustable resistance circuit is controlled by the processor and outputs an adjustable digital resistance; and the output end of the adjustable resistance circuit is connected with the reference voltage input end of the DC-DC booster circuit.
In a preferred embodiment of the present invention, the adjustable resistor circuit further includes one or more adjustable resistor chips, and output terminals of the multiple adjustable resistor chips are connected in parallel and then connected to a reference voltage input terminal of the DC-DC boost circuit.
In a preferred embodiment of the present invention, the control terminal of the adjustable resistor chip is connected to the processor through an I2C bus or a PMbus bus.
In a preferred embodiment of the present invention, the model of the adjustable resistor chip is AD 5293.
In a preferred embodiment of the present invention, the DC-DC boost circuit further comprises a boost module chip, wherein the boost module chip has a reference voltage input terminal VREFAnd the output end of the adjustable resistance circuit is connected and changes the output voltage according to the resistance change output by the adjustable resistance circuit.
In a preferred embodiment of the invention, the model of the boost module chip is DW-P301-1B 45.
In a preferred embodiment of the present invention, the temperature acquisition module further includes a temperature sensor chip mounted on the APD, and a control terminal of the temperature sensor chip is connected to the processor through an I2C bus or a PMbus bus.
In a preferred embodiment of the present invention, the model of the temperature sensor chip is TMP 117.
The invention has the beneficial effects that:
firstly, the APD voltage type open loop temperature-dependent regulation system of the laser radar in the embodiment of the invention improves the measurement precision of the laser radar through temperature-dependent regulation, and reduces the sensitivity of the measurement precision of the laser radar to temperature: the temperature acquisition module acquires the temperature of the APD in real time and feeds the temperature back to the processor, the processor outputs a voltage regulation signal according to the temperature value, the voltage regulation module generates output voltage used as APD bias voltage and regulates the output voltage according to the voltage regulation signal of the processor, so that the regulated output voltage V isAPDThe bias voltage is the same as that of the APD under temperature compensation, so that the bias voltage of the APD is adjusted in real time according to the temperature of the APD, and the APD works at constant gain.
The processor, the temperature acquisition module and the voltage regulation module are all composed of low-voltage and digital circuits matched with an integrated chip, the energy loss is small (lower than 1.5 percent of the energy consumption of a product), the voltage is regulated stably along with the temperature, the regulation precision is high, the response is fast, the regulation voltage ripple is small, and the oscillation in the regulation process is small.
Drawings
FIG. 1 is a block diagram of a laser radar APD voltage type open loop temperature-dependent regulation system according to an embodiment of the present invention;
FIG. 2 is an internal circuit diagram of a DC-DC boost circuit in an embodiment of the present invention;
FIG. 3 is a linear relationship diagram of the control voltage and the output voltage of the boost module chip in the embodiment of the present invention;
FIG. 4 is a software operation flow diagram of an ARM processor;
fig. 5 is a flowchart of a write timing of the TMP 117;
fig. 6 is a flowchart of the read sequence of the TMP 117.
Detailed Description
The present invention is further described below in conjunction with the following figures and specific examples so that those skilled in the art may better understand the present invention and practice it, but the examples are not intended to limit the present invention.
Examples
Here, the following are to be explained: an Avalanche Photodiode (APD) is a p-n junction-type light-detecting diode that, when applied in a laser receiver circuit of a lidar, utilizes the breakdown voltage V of the APDBRThe avalanche multiplication effect of the down carriers is used for gaining and amplifying the photoelectric signal so as to improve the detection sensitivity. In practical application, the change of the environmental temperature has great influence on the characteristics of the APD, and when the temperature rises, the breakdown voltage V of the APD increasesBRAlso, as the voltage increases, if the operating voltage (or "bias voltage") of the APD is not changed, the photodetection performance of the APD is weakened, and the sensitivity is reduced.
In the technical scheme of the embodiment, a laser receiving circuit of the 60-meter laser radar is designed, and a photodiode (namely APD) with the model of APD500-9 is adopted, so that the temperature is sensitive, and the performance of the laser receiving circuit is closely related to the measurement accuracy.
The parameters of APD500-9 are shown in Table 1 below:
TABLE 1 APD500-9 parameters
Electro-optical characteristics@23℃
As shown in Table 1, breakdown voltage V of APDBRThe bias voltage V increases with increasing temperaturebiasWill increase, for example: breakdown voltage V of APD at 23 deg.CBR200V, and a breakdown voltage V of 1 ℃ when the temperature is increased by 1℃ under the condition of a temperature coefficient of 1.5BRThe increase is 1.5V; conversely, the temperature is reduced by 1 ℃ and the breakdown voltage V is reducedBRThe reduction was 1.5V.
GAIN GAIN and bias voltage V of APD500-9biasBreakdown voltage VBRThe relationship of (a) is as follows:
when GAIN is 100, Vbias＝0.92*VBR(a gain of 100 is used in design);
when GAIN is 50, Vbias＝0.8*VBR；
When GAIN is 30, Vbias＝0.7*VBR。
Based on this, in order to ensure that the APD is stabilized at a fixed gain value (for example, 100) when the temperature changes, the bias voltage of the APD needs to be controlled and adjusted when the laser receiving circuit of the laser radar is designed.
In order to adjust the bias voltage of the APD with temperature, the embodiment discloses a voltage type open loop temperature-dependent adjustment system for the APD of the laser radar, which is shown in fig. 1 and comprises a processor, a temperature acquisition module and a voltage adjustment module,
the temperature acquisition module is used for acquiring the temperature of the APD in real time and transmitting the temperature to the processor;
the voltage regulation module generates an output voltage used as an APD bias voltage, is controlled by the processor, and adjusts an output voltage V of the processor according to a voltage regulation signal of the processorAPDSo that the regulated output voltage VAPDThe bias voltage required by the APD under temperature compensation is the same; here, the bias voltage required by the APD under temperature compensation is the bias voltage required to ensure its fixed gain.
The processor receives the temperature signal output by the temperature acquisition module and generates the voltage regulation signal according to the temperature signal.
In the technical solution of this embodiment, the processor preferably uses an ARM processor including an ARM-M series chip, for example, STM32F 407.
The temperature acquisition module comprises a temperature sensor chip attached to an APD (avalanche photo diode) and the technical scheme of the embodiment selects the temperature sensor chip with the model of TMP117 of a TI company, and the precision is as follows:
0.1 deg.C (maximum) at 20 deg.C to +50 deg.C, and resolution of 0.0078125;
within the range of 40 ℃ to +70 ℃ plus or minus 0.15 ℃ (maximum)
Within the range of 40 ℃ to +100 ℃ plus or minus 0.2 ℃ (maximum)
Within the range of 55 ℃ to +125 ℃ plus or minus 0.25 ℃ (maximum)
Within the range of 55 ℃ to +150 ℃ is. + -. 0.3 ℃ C (maximum).
The temperature sensor chip is mounted as close to the APD as possible in structure to more accurately detect the temperature of the APD. The temperature sensor chip is connected with the ARM processor by an I2C bus or a PMbus bus, and transmits the detected temperature of the APD to the ARM processor.
In the present embodiment, the APD is preferably a photodiode of type AD500-9, the temperature coefficient of AD500-9 is 1.5, and when the design GAIN is 100, the bias voltage V is determined by the inherent characteristic of AD500-9biasAnd breakdown voltage VBRThe relationship of (a) to (b) is as follows:
Vbias＝0.92*[VBR+(T-23)]1.5 (equation 1);
wherein the temperature range of T is an industrial-grade temperature range, namely-40 ℃ to +85 ℃.
The working environment temperature of the laser radar is-40 ℃ to +85 ℃, the delta T is 125, and the variable quantity delta V of the bias voltage of the APD under different temperatures is calculated and obtained according to the formula 1biasComprises the following steps:
ΔVbiasΔ T1.5 × 0.92 (equation 2).
If the temperature of the APD working environment is-40-85 ℃, the temperature coefficient is 1.5, VBRAt 200V, the APD bias voltage V is calculated according to equation (1)biasThe range of (A) is as follows:
bias voltage VbiasMinimum value VL＝0.92*[200+(-40-23)*1.5]＝97.06V；
Bias voltage VbiasMinimum value VH＝0.92*[200+(85-23)*1.5]＝269.56V。
The invention aims to control the output voltage V generated by a DC-DC booster circuit to operate a laser radar APD voltage type open loop temperature-dependent regulation system-APDBias voltage V required for temperature compensation with APDbiasSimilarly, here, the bias voltage required by the APD under temperature compensation is the bias voltage required to ensure its fixed gain.
In the technical solution of this embodiment, the voltage regulation module includes an adjustable resistor circuit and a DC-DC boost circuit, and as shown in fig. 2, the DC-DC boost circuit is a resistor control voltage type circuit, which has a boost module chip, and preferably uses an eastern high voltage DW-P301-1B45 module, whose input voltage is DC9V, output voltage is adjustable from 0V to 300V, and output current is 1 mA. Wherein Vref is an internal 5V reference voltage, W is an adjustable resistor, and V2 is a control voltage, and the module adopts a resistor to control the linear output of the output voltage, as shown in fig. 3.
The output end of the adjustable resistance circuit is connected with the reference voltage input end of the DC-DC booster circuit, and the adjustable resistance circuit generates an adjustable digital resistance which is used as the adjustable resistance W shown in figure 2.
In one implementation technical solution of this embodiment, the adjustable resistance circuit includes an adjustable resistance chip; in another embodiment, the adjustable resistor circuit includes multiple adjustable resistor chips, for example, two adjustable resistor chips, and the output ends of the multiple adjustable resistor chips are connected in parallel and then connected to the reference voltage input end V of the boost module chipREF。
In the technical scheme of this embodiment, the adjustable resistor chip preferably uses a digital adjustable resistor AD5293BRUZ-20 of ADI corporation, the resistance value of the adjustable resistor is 20K, the resolution is 1024, the precision of the adjustable resistor is 1%, and the adjustment step is 20000/1023 Ω -19.55 Ω; the control end of the adjustable resistance chip is connected with the processor through an I2C bus or a PMbus bus.
Under the condition that the adjustable resistance circuit comprises one path of adjustable resistance chip:
the AD5293BRUZ-20 outputs an adjustable digital resistor 20K which is used as an adjustable resistor W of a high-voltage DW-P301-1B45 module, and the adjusting step of the AD5293BRUZ-20 is 20000/1023 omega, so that the voltage adjusting resolution of the high-voltage DW-P301-1B45 module is as follows:
the accuracy of the temperature sensor chip TMP117 is +/-0.1 ℃ in the range of 20 ℃ to +50 ℃, and the resolution is 0.0078125.
According to equation 2, when the voltage changes by a minimum step, the corresponding temperature change is:
that is, when the temperature changes by 25 minimum units (close to 0.2 ℃), the primary bias voltage is adjusted (or the output voltage of the DW-P301-1B45 module is adjusted by adjusting the resistance output of the AD5293 BRUZ-20), and the adjustment amplitude is 0.293V.
For example, the following steps are carried out:
breakdown voltage V of APD when laser radar works in 23 ℃ environmentBR200V, gain of 100M, and bias voltage V required at 23 deg.Cbias0.92 × 200 ═ 184V; at this time, the resistance value that ADIAD5293 needs to output is calculated according to the following equation 3:
wherein D is the decimal equivalent of the binary code AD5293 loaded in the 10-bit RDAC register;
RAB＝20K
RWB is the value of the end W and the end B of the adjustable resistor;
RWA is the value of the end W and the end B of the adjustable resistor;
RAB is the total value of the adjustable resistance W.
At 23 deg.C, D184X 1024/300 ≈ 628
If the temperature rises to 40 ℃, the currently required bias voltage is calculated according to equation 1 as:
Vbias＝[200+1.5×(40-23)]×0.92＝207.46V。
the required D values at this time are: d207.46 × 1024/300 ≈ 708.
The resistance value output from AD5293 is calculated according to equation (3).
Referring to the flowchart of the operation of the ARM processor software shown in fig. 4, the operation process is as follows:
(1) calculating and acquiring the working temperature T of the APD according to the temperature signal uploaded by the temperature acquisition module;
(2) calculating bias voltage V required by temperature compensation of APD working at current temperature T according to formula (1)bias；
(3) Calculating an adjustable digital resistance RWB according to a formula (3);
(4) the output resistor RWB of the adjustable resistor chip is adjusted through instructions, and the boost module chip generates bias voltage V required by APD under temperature compensation under the control of the output resistor RWBbiasSame output voltage bias voltage VAPDAnd carrying out temperature compensation on the APD to ensure that the APD works at constant gain.
The software development of the ARM processor comprises the following modules:
1. developing a system driver;
2. developing a temperature acquisition module program;
3. TMP117 write timing;
4. tmp117 read timing;
5. developing a data processing program;
6. and developing a voltage regulation module program.
The program runs as follows: after the system is powered on and reset, the heap and the stack are firstly distributed and initialized, and an interrupt vector table is established at the same time. Then, the ARM processor finds the vector table according to the offset address of the interrupt vector table, and configures a stack register and a program calculator; after the system clock and the user stack are set, the main function is jumped to and executed by the main function.
After entering a main program, firstly initializing the system, wherein the initialization mainly comprises the initialization of system clock frequency, interrupt priority and peripheral interfaces; then the ARM processor reads a TMP117 temperature chip register through an I2C interface, calculates and obtains temperature information, carries out algorithm processing on the obtained temperature according to a formula (1) to obtain the bias of the APD, obtains a resistance value according to an adjustable resistance value reference formula, converts the resistance value into a specified coding format through a PMBus interface and writes the coding format into an AD5293, and therefore the purpose of adjusting the bias voltage of the APD is achieved; the next measurement is then started.
Temperature acquisition module program development
The IIC bus serial data line SDA and the serial clock line SCL of the TMP117 temperature acquisition chip are controlled by a main chip ARM processor, the ARM processor serves as a host, and the TMP117 serves as a slave. In order to enable the ARM processor to communicate with the TMP117 properly, the read and write timing of I2C must be strictly followed.
TMP117 write timing
Referring to fig. 5, when writing the TMP117 temperature sensor, the ARM processor sends a start signal to the TMP117, sends a device address of the TMP117, writes a related register address (a configuration register 01h, an upper limit temperature register 02h, and a lower limit temperature register 03h) inside the TPM117, indicates which register is to be operated by the write address, writes data of the corresponding register, and finally sends a stop signal, thereby completing initialization configuration of the TMP117 temperature sensor by the ARM processor.
TMP117 read timing
Referring to fig. 6, the reading operation of the TMP117 temperature sensor mainly includes reading of an internal temperature value register 00h, an upper limit register 02h, and a lower limit register 03 h. The ARM processor sends a starting signal to the TMP117, sends a device address of the TMP117, writes an address of an internal register (an internal temperature value register 00h, an upper limit temperature register 02h and a lower limit temperature register 03h) of the TPM117, indicates which register is to be operated through the written address, reads data of the corresponding register, and finally sends a stop signal to finish data reading of the TMP117 temperature sensor by the ARM processor.
The above-mentioned embodiments are merely preferred embodiments for fully illustrating the present invention, and the scope of the present invention is not limited thereto. The equivalent substitution or change made by the technical personnel in the technical field on the basis of the invention is all within the protection scope of the invention. The protection scope of the invention is subject to the claims.
Claims (10)
1. The utility model provides a laser radar APD voltage formula open loop is along with temperature governing system which characterized in that: comprises a processor, a temperature acquisition module and a voltage regulation module,
the temperature acquisition module is used for acquiring the temperature of the APD in real time and transmitting the temperature to the processor;
the voltage regulation module generates an output voltage used as an APD bias voltage, is controlled by the processor, and adjusts an output voltage V of the processor according to a voltage regulation signal of the processorAPDSo that the regulated output voltage VAPDThe bias voltage required by the APD under temperature compensation is the same;
the processor receives the temperature signal output by the temperature acquisition module and generates the voltage regulation signal according to the temperature signal;
the processor realizes logic operation and data processing by running a program.
2. The lidar APD voltage-type open loop temperature dependent regulation system of claim 1, wherein: the processor is an ARM processor.
3. The lidar APD voltage type open loop temperature dependent regulation system of claim 1 or 2, wherein: the voltage regulating module comprises an adjustable resistance circuit and a DC-DC booster circuit, and the adjustable resistance circuit is controlled by the processor and outputs an adjustable digital resistance; and the output end of the adjustable resistance circuit is connected with the reference voltage input end of the DC-DC booster circuit.
4. The lidar APD voltage open loop temperature dependent regulation system of claim 3, wherein: the adjustable resistance circuit comprises one or more adjustable resistance chips, and the output ends of the multiple adjustable resistance chips are connected in parallel and then connected with the reference voltage input end of the DC-DC booster circuit.
5. The lidar APD voltage-type open loop temperature dependent regulation system of claim 4, wherein: and the control end of the adjustable resistance chip is connected with the processor through an I2C bus or a PMbus bus.
6. The lidar APD voltage-type open loop temperature dependent regulation system of claim 4, wherein: the model of the adjustable resistance chip is AD 5293.
7. The lidar APD voltage open loop temperature dependent regulation system of claim 3, wherein: the DC-DC booster circuit comprises a boost module chip, a reference voltage input end (V) of whichREF) And the output end of the adjustable resistance circuit is connected and changes the output voltage according to the resistance change output by the adjustable resistance circuit.
8. The lidar APD voltage open loop temperature dependent regulation system of claim 7, wherein: the model of the boosting module chip is DW-P301-1B 45.
9. The lidar APD voltage type open loop temperature dependent regulation system of claim 1 or 2, wherein: the temperature acquisition module comprises a temperature sensor chip attached to an APD (avalanche photo diode) and a control end of the temperature sensor chip is connected with the processor through an I2C bus or a PMbus.
10. The lidar APD voltage open loop temperature dependent regulation system of claim 9, wherein: the model of the temperature sensor chip is TMP 117.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911002310.6A CN110597342A (en) | 2019-10-21 | 2019-10-21 | Laser radar APD voltage type open loop temperature-dependent regulating system |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911002310.6A CN110597342A (en) | 2019-10-21 | 2019-10-21 | Laser radar APD voltage type open loop temperature-dependent regulating system |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN110597342A true CN110597342A (en) | 2019-12-20 |
Family
ID=68851236
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201911002310.6A Pending CN110597342A (en) | 2019-10-21 | 2019-10-21 | Laser radar APD voltage type open loop temperature-dependent regulating system |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN110597342A (en) |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102798466A (en) * | 2011-05-27 | 2012-11-28 | 上海华魏光纤传感技术有限公司 | APD (Avalanche Photo Diode) reverse bias voltage control circuit with temperature compensation |
| CN103940507A (en) * | 2014-04-28 | 2014-07-23 | 北京航天控制仪器研究所 | Bias voltage compensating circuit |
| CN104252194A (en) * | 2014-08-29 | 2014-12-31 | 北京航天控制仪器研究所 | APD (avalanche photo diode) bias voltage automatic adjusting device and APD bias voltage automatic adjusting method |
| JP2015103914A (en) * | 2013-11-22 | 2015-06-04 | 三菱電機株式会社 | Optical power monitor circuit, optical module, station-side device, optical power monitor method, and program |
| CN106094963A (en) * | 2016-07-31 | 2016-11-09 | 桂林理工大学 | APD array chip bias voltage Full-automatic temperature compensation system |
| CN108445946A (en) * | 2018-04-04 | 2018-08-24 | 安徽问天量子科技股份有限公司 | The temperature self-adaptation control circuit and method of APD in quantum key dispatching system |
-
2019
- 2019-10-21 CN CN201911002310.6A patent/CN110597342A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102798466A (en) * | 2011-05-27 | 2012-11-28 | 上海华魏光纤传感技术有限公司 | APD (Avalanche Photo Diode) reverse bias voltage control circuit with temperature compensation |
| JP2015103914A (en) * | 2013-11-22 | 2015-06-04 | 三菱電機株式会社 | Optical power monitor circuit, optical module, station-side device, optical power monitor method, and program |
| CN103940507A (en) * | 2014-04-28 | 2014-07-23 | 北京航天控制仪器研究所 | Bias voltage compensating circuit |
| CN104252194A (en) * | 2014-08-29 | 2014-12-31 | 北京航天控制仪器研究所 | APD (avalanche photo diode) bias voltage automatic adjusting device and APD bias voltage automatic adjusting method |
| CN106094963A (en) * | 2016-07-31 | 2016-11-09 | 桂林理工大学 | APD array chip bias voltage Full-automatic temperature compensation system |
| CN108445946A (en) * | 2018-04-04 | 2018-08-24 | 安徽问天量子科技股份有限公司 | The temperature self-adaptation control circuit and method of APD in quantum key dispatching system |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US20080067998A1 (en) | Optical pointing device and power supply semiconductor device therefor | |
| US5932994A (en) | Solar cell power source device | |
| CN110445381B (en) | Multiphase switch converter containing daisy chain structure and phase switching control method thereof | |
| CN110596681A (en) | Voltage type closed loop temperature-dependent regulating system based on FPGA chip | |
| CN101330252B (en) | DC-DC converter with temperature compensating circuit | |
| US8922174B2 (en) | Power factor correction circuit with frequency jittering | |
| US20110174801A1 (en) | Systems and methods for sourcing a heater | |
| EP3819741B1 (en) | Constant current driving circuit and corresponding photoelectric smoke alarm circuit | |
| CN102565502A (en) | Power semiconductor device current detector circuit and detection method | |
| CN109541569A (en) | A kind of laser radar APD temperature compensation system and measurement method | |
| KR101727219B1 (en) | High-frequency on-package voltage regulator | |
| US9425685B2 (en) | DC-DC voltage converter and conversion method | |
| CN110596680A (en) | Laser radar APD voltage type closed loop temperature-dependent regulating system | |
| CN109738065B (en) | Blood oxygen detection chip with rapid light intensity tracking capability | |
| US20140210439A1 (en) | Switching Regulator and Control Circuit Thereof | |
| CN110597342A (en) | Laser radar APD voltage type open loop temperature-dependent regulating system | |
| EP1659379B1 (en) | Light monitor | |
| CN110658866B (en) | Current type closed loop temperature-dependent regulating system based on FPGA chip | |
| CN110597341A (en) | Current type open loop temperature-dependent regulating system based on FPGA chip | |
| CN110596682A (en) | Voltage type open-loop temperature-dependent adjusting system based on FPGA chip | |
| CN110554371A (en) | Laser radar APD current type closed loop temperature-dependent regulating system | |
| CN113437954A (en) | Jitter frequency adjusting circuit, method and chip | |
| CN110673684A (en) | Laser radar APD current type open loop temperature-dependent regulating system | |
| CN102931830A (en) | inductance charging time control circuit and method and chip and on-off power source | |
| CN112311230A (en) | Integrated circuit device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20191220 |
|
| RJ01 | Rejection of invention patent application after publication |