CN110673684A - Laser radar APD current type open loop temperature-dependent regulating system - Google Patents

Laser radar APD current type open loop temperature-dependent regulating system Download PDF

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CN110673684A
CN110673684A CN201911002311.0A CN201911002311A CN110673684A CN 110673684 A CN110673684 A CN 110673684A CN 201911002311 A CN201911002311 A CN 201911002311A CN 110673684 A CN110673684 A CN 110673684A
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current
temperature
apd
chip
processor
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刘慧林
姚建春
王娟
严柯
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Suzhou Jiuwu Interchange Intelligent Technology Co Ltd
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Suzhou Jiuwu Interchange Intelligent Technology Co Ltd
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    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
    • G05F1/10—Regulating voltage or current
    • G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is dc
    • G05F1/56—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices
    • G05F1/565—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor
    • G05F1/567—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor for temperature compensation
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
    • G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
    • G01S7/48—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00
    • G01S7/483—Details of pulse systems
    • G01S7/486—Receivers
    • G01S7/4861—Circuits for detection, sampling, integration or read-out
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
    • G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
    • G01S7/48—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00
    • G01S7/491—Details of non-pulse systems
    • G01S7/4912—Receivers
    • G01S7/4913—Circuits for detection, sampling, integration or read-out

Abstract

The invention discloses a laser radar APD current type open loop temperature-dependent regulating system, which comprises a processor, a temperature acquisition module, a current regulating module and a DC-DC booster circuit, wherein the temperature acquisition module is connected with the temperature-dependent regulating module; the temperature acquisition module acquires the temperature of the APD in real time and transmits the temperature to the processor; the current regulating module is controlled by the processor and outputs a current I capable of being regulatedDAC(ii) a The DC-DC booster circuit is controlled by a current regulation module according to the current I output by the current regulation moduleDACRegulating the output voltage V—APDOutput voltage V of DC-DC booster circuit—APDFor providing a bias voltage to the APD; the processor receives the temperature signal output by the temperature acquisition module and generates a current regulation signal for controlling the current regulation module according to the temperature signal. The invention improves the measurement precision of the laser radar and reduces the laser radar through temperature regulationSensitivity of measurement accuracy to temperature. Each module is composed of a low-voltage and digital circuit matched with an integrated chip, the voltage is adjusted stably along with the temperature, the adjusting precision is high, the adjusting voltage ripple is small, and the oscillation in the adjusting process is small.

Description

Laser radar APD current type open loop temperature-dependent regulating system
Technical Field
The invention relates to the technical field of laser radars, in particular to an APD current type open loop temperature-dependent regulating system of a laser radar.
Background
An Avalanche Photodiode (APD) is a p-n junction type light detection diode, and when the APD is applied to a laser receiving circuit of a laser radar, the avalanche multiplication effect of carriers under the breakdown voltage of the APD is utilized to gain and amplify a photoelectric signal so as to improve the detection sensitivity. In practical applications, the change of the environmental temperature greatly affects the characteristics of the APD, and when the temperature rises, the breakdown voltage of the APD also rises, and if the operating voltage (i.e. high voltage) of the APD is not changed, the photoelectric detection performance of the APD is weakened, and the sensitivity is reduced.
At present, the requirement of measurement accuracy of a product (i.e. achieving that an APD works at a constant gain) is generally achieved by controlling the internal temperature of a laser radar, for example, chinese patent with publication number CN201853143U discloses a laser radar temperature control device, which includes a radar, a telescope main barrel, a sensor and a temperature control device, wherein the temperature control device includes a semiconductor refrigerator and a temperature control circuit board, and the temperature control circuit board is electrically connected with the semiconductor refrigerator through a lead terminal. The use of the temperature control device expands the use temperature range of the laser radar, and completely ensures that the temperature control precision is not influenced under the condition that the temperature difference between the inside and the outside reaches 60 ℃. This approach has many drawbacks: the internal temperature of the laser radar is easily interfered by the outside, the temperature regulation has a certain time delay, and the internal temperature regulation needs to consume a large amount of energy (which is even more than several times compared with the main working energy of the laser radar).
In addition, chinese patent publication No. CN109541569A discloses a laser radar PAD temperature compensation system, which collects the temperature of the APD in real time through a temperature collection module, measures the real-time voltage of the APD through a voltage feedback module, compares the real-time voltage with a prestored theoretical voltage corresponding to the real-time temperature, and adjusts a PWM signal for controlling the output voltage of the voltage boost module according to the comparison result, thereby implementing the laser radar APD temperature compensation. In the scheme, the output voltage is adjusted in a mode of adjusting the output duty ratio of the MOS tube by outputting the PWM signal through the processor, the adjusting speed is low, the oscillation is large in the adjusting process, and the voltage output ripple is large. In addition, the circuit structure of the boosting module built by discrete components is very unstable.
Disclosure of Invention
The embodiment of the invention provides an APD current type open loop temperature-dependent regulation system for a laser radar, which improves the measurement precision of the laser radar and reduces the sensitivity of the measurement precision of the laser radar to temperature by regulating with the temperature. Each module is composed of a low-voltage and digital circuit matched with an integrated chip, the voltage is adjusted stably along with the temperature, the adjusting precision is high, the adjusting voltage ripple is small, and the oscillation in the adjusting process is small.
In order to solve the technical problem, the invention provides an APD current type open loop temperature-dependent regulation system of a laser radar, which comprises a processor, a temperature acquisition module, a current regulation module and a DC-DC booster circuit,
the temperature acquisition module is used for acquiring the temperature of the APD in real time and transmitting the temperature to the processor;
the current regulating module is controlled by the processor and is used for outputting a current I capable of being regulatedDAC；
The DC-DC booster circuit is controlled by a current regulation module according to the current I output by the current regulation moduleDACRegulating the output voltage V—APDAn output voltage V of the DC-DC boost circuit—APDFor providing a bias voltage to the APD;
the processor receives the temperature signal output by the temperature acquisition module and generates a current regulation signal for controlling the current regulation module according to the temperature signal;
the processor realizes logic operation and data processing by running a program.
In a preferred embodiment of the present invention, the processor is an ARM processor.
In a preferred embodiment of the present invention, the DC-DC Boost circuit further comprises a DC-DC Boost circuit, and the DC-DC Boost circuit comprises a DC-DC Boost chip and a peripheral circuit matched with the DC-DC Boost chip.
In a preferred embodiment of the present invention, the peripheral circuit further comprises an inductor L, a diode D1, a resistor RFB1, a resistor RFB2, and a capacitor C1; one end of the inductor is connected with the input end of the DC-DC Boost chip, and the other end of the inductor is connected with the anode of the first diode; the capacitor I is connected in parallel with the whole body formed by connecting the resistor I and the resistor II in series and is connected between the cathode of the diode I and the ground; and the cathode of the diode I is connected with the APD.
In a preferred embodiment of the present invention, the model of the DC-DC Boost chip is LT 8331.
In a preferred embodiment of the present invention, the DC-DC Boost circuit further includes a primary voltage doubling circuit, the primary voltage doubling circuit is used for increasing the output voltage of the DC-DC Boost circuit, and includes a diode two D2, a diode three D3, and a capacitor two C2, one end of the capacitor two and the anode of the diode two are both connected to a switch control pin SW of the DC-DC Boost chip, the cathode of the diode two is connected to the anode of the diode three, and the cathode of the diode three and the other end of the capacitor two are both connected to a peripheral circuit of the DC-DC Boost chip.
In a preferred embodiment of the present invention, the current regulation module further includes a current DAC chip, a control terminal of the current DAC chip is connected to the processor through an I2C bus or a PMbus bus, an output terminal of the current DAC chip is connected to an enable terminal of the DC-DC Boost chip, and a current output terminal of the current DAC chip is connected to a feedback terminal of the DC-DC Boost chip.
In a preferred embodiment of the present invention, the current DAC chip is LTC 7106.
In a preferred embodiment of the present invention, the temperature acquisition module further includes a temperature sensor chip mounted on the APD, and a control terminal of the temperature sensor chip is connected to the processor through an I2C bus or a PMbus bus.
In a preferred embodiment of the present invention, the model of the temperature sensor chip is TMP 117.
The invention has the beneficial effects that:
first, an embodiment of the present inventionWell laser radar APD current formula open loop is along with temperature governing system, improves laser radar's measurement accuracy through adjusting along with the temperature, reduces the sensitivity of laser radar measurement accuracy to the temperature: the temperature acquisition module acquires the temperature of the APD in real time and feeds the temperature back to the processor, the processor outputs a current regulation signal according to the temperature value, and the current regulation module changes and controls the output current I of the output voltage of the DC-DC booster circuit according to the current regulation signalDACTherefore, the bias voltage of the APD is adjusted in real time according to the temperature of the APD, so that the APD works at constant gain.
The processor, the temperature acquisition module, the current regulation module and the DC-DC booster circuit are all composed of low-voltage and digital circuits matched with an integrated chip, the energy loss is small (less than 1.5 percent of the energy consumption of a product), the voltage is regulated stably along with the temperature, the regulation precision is high, the response is fast, the regulation voltage ripple is small, and the oscillation in the regulation process is small.
Drawings
FIG. 1 is a block diagram of a laser radar APD current type open loop temperature-dependent regulation system in an embodiment of the present invention.
Detailed Description
The present invention is further described below in conjunction with the following figures and specific examples so that those skilled in the art may better understand the present invention and practice it, but the examples are not intended to limit the present invention.
Examples
Here, the following are to be explained: an Avalanche Photodiode (APD) is a p-n junction-type light-detecting diode that, when applied in a laser receiver circuit of a lidar, utilizes the breakdown voltage V of the APDBRThe avalanche multiplication effect of the down carriers is used for gaining and amplifying the photoelectric signal so as to improve the detection sensitivity. In practical application, the change of the environmental temperature has great influence on the characteristics of the APD, and when the temperature rises, the breakdown voltage V of the APD increasesBRAlso, as the voltage increases, if the operating voltage (or "bias voltage") of the APD is not changed, the photodetection performance of the APD is weakened, and the sensitivity is reduced.
In the technical scheme of the embodiment, a laser receiving circuit of the 60-meter laser radar is designed, and a photodiode (namely APD) with the model of APD500-9 is adopted, so that the temperature is sensitive, and the performance of the laser receiving circuit is closely related to the measurement accuracy.
The parameters of APD500-9 are shown in Table 1 below:
TABLE 1 APD500-9 parameters
Electro-optical characteristics@23℃
As shown in Table 1, breakdown voltage V of APDBRThe bias voltage V increases with increasing temperaturebiasWill increase, for example: breakdown voltage V of APD at 23 deg.CBR200V, and a breakdown voltage V of 1 ℃ when the temperature is increased by 1℃ under the condition of a temperature coefficient of 1.5BRThe increase is 1.5V; conversely, the temperature is reduced by 1 ℃ and the breakdown voltage V is reducedBRThe reduction was 1.5V.
GAIN GAIN and bias voltage V of APD500-9biasBreakdown voltage VBRThe relationship of (a) is as follows:
when GAIN is 100, Vbias＝0.92*VBR(a gain of 100 is used in design);
when GAIN is 50, Vbias＝0.8*VBR；
When GAIN is 30, Vbias＝0.7*VBR。
Based on this, in order to ensure that the APD is stabilized at a fixed gain value (for example, 100) when the temperature changes, the bias voltage of the APD needs to be controlled and adjusted when the laser receiving circuit of the laser radar is designed.
In order to adjust the bias voltage of the APD with temperature, the embodiment discloses a laser radar APD current type open loop temperature adjustment system, which is shown in fig. 1 and includes a processor, a temperature acquisition module, a current adjustment module and a DC-DC boost circuit.
The temperature acquisition module is used for acquiring the temperature of the APD in real time and transmitting the temperature to the processor;
the current regulating module is controlled by the processor and is used for outputting a current I capable of being regulatedDAC；
The DC-DC booster circuit is controlled by a current regulation module according to the current I output by the current regulation moduleDACRegulating the output voltage V—APDThe output voltage V of the DC-DC booster circuit—APDFor providing a bias voltage to the APD;
the processor receives the temperature signal output by the temperature acquisition module and generates a current regulation signal for controlling the current regulation module according to the temperature signal.
In the technical solution of this embodiment, the processor preferably uses an ARM processor including an ARM-M series chip, for example, STM32F 407.
The temperature acquisition module comprises a temperature sensor chip attached to an APD (avalanche photo diode) and the technical scheme of the embodiment selects the temperature sensor chip with the model of TMP117 of a TI company, and the precision is as follows:
within the range of 20 ℃ to +50 ℃ at + -0.1 ℃ (maximum)
Within the range of 40 ℃ to +70 ℃ plus or minus 0.15 ℃ (maximum)
Within the range of 40 ℃ to +100 ℃ plus or minus 0.2 ℃ (maximum)
Within the range of 55 ℃ to +125 ℃ plus or minus 0.25 ℃ (maximum)
Within the range of 55 ℃ to +150 ℃ is. + -. 0.3 ℃ C (maximum).
The temperature sensor chip is mounted as close to the APD as possible in structure to more accurately detect the temperature of the APD. The temperature sensor chip is connected with the ARM processor by an I2C bus or a PMbus bus, and transmits the detected temperature of the APD to the ARM processor.
The DC-DC Boost circuit comprises a DC-DC Boost circuit and a primary voltage doubling circuit, wherein the DC-DC Boost circuit is a typical Boost circuit and generates output voltage higher than the input voltage of the typical Boost circuit; the primary voltage doubling circuit performs primary voltage doubling on the output voltage of the DC-DCboost voltage booster circuit.
The DC-DC Boost circuit comprises a DC-DC Boost chip and a peripheral circuit matched with the DC-DC Boost chip. In the technical scheme of the embodiment, the DC-DC Boost chip preferably uses an LT8331 type chip, and the chip has the largest branchOutputting the voltage of 140V, multiplying the boosted voltage again to output the voltage V-APDUp to 280V.
The peripheral circuit comprises an inductor L, a diode I D1, a resistor I RFB1, a resistor II RFB2 and a capacitor I C1; one end of the inductor is connected with the input end of the DC-DC Boost chip, and the other end of the inductor is connected with the anode of the first diode; the capacitor I is connected in parallel with the whole body formed by connecting the resistor I and the resistor II in series and is connected between the cathode of the diode I and the ground; and the cathode of the diode I is connected with the APD. The primary voltage doubling circuit is used for improving the output voltage of the DC-DC Boost circuit and comprises a second diode D2, a third diode D3 and a second capacitor C2, one end of the second capacitor and the anode of the second diode are connected with a switch control pin SW of the DC-DC Boost chip, the cathode of the second diode is connected with the anode of the third diode, and the cathode of the third diode and the other end of the second capacitor are connected with the anode of the first diode.
In the technical scheme of the embodiment, the inductance L preferably adopts CLF7045NIT-331M-D, 330uH and 0.6A of TDK company; diodes D1, D2 and D3 adopt diode Schottky Diodes BAV21 WQ-7-F; capacitor one C1 preferably uses muRataGRM55DR72E105KW01L, 100nF, 250V; the capacitor two C2 is preferably made of TDK C5750X7T2W105K250KA, 1uF, 450V; resistors RFB1 and RFB2 are 1.5M omega and 14.7K omega respectively, and package size V of 0603 or more is adopted—APDThe default output voltage is 165V.
The current regulation module includes a current DAC chip, and in the technical solution of this embodiment, the DAC chip preferably uses an ADI LTC7106 chip, and the chip outputs a current IDACTo change the output feedback voltage V of the DC-DC Boost chipREFThereby achieving the control of the output voltage V-APDThe purpose of (1).
In fig. 1, GPO of the current DAC chip is an output pin, and is connected to an enable pin EN of the DC-DC Boost chip, and is used for controlling the LT8331 to be turned on and off.
And a current output pin IDAC of the current DAC chip is connected with a feedback pin FB of the DC-DC Boost chip.
The control portion of the current DAC chip is connected to the ARM processor through an I2C bus or a PMbus bus.
LTC7106 is a 7-bit current DAC, and there are three modes of current regulation, which are Nominal, Range High, Range Low modes, and the current regulation ranges in the three modes are shown in the following Table 2:
TABLE 2 output Current I of LTC7106DACAdjustment range
Range LSB(μA) IMIN(μA) IMAX(μA)
Nominal 1 –64 63
RangeHigh 4 –256 252
RangeLow 0.25 –16 15.75
From table 2, the minimum adjustment step Nominal mode is 1 μ a, the Range High mode is 4 μ a, and the Range Low mode is 0.25 μ a.
In FIG. 1, the output voltage V-APDAnd current IDACIn relation to (2)The following were used:
Figure BDA0002241708110000081
wherein, VREFThe output feedback voltage of the DC-DC Boost chip is obtained; i isDACIs the output current of a current DAC chip, RFB1、RFB2Respectively the resistance values of the first resistor and the second resistor.
Voltage V-APDOutput to APD for use as bias voltage V for APDbias。
The algorithm implementation module of the ARM processor is detailed below:
in the formula (1)
RFB1Are all of a fixed value, V-APDIs only changed with IDACIn connection with, i.e. with
ΔV-APD＝ΔIDAC*RFB1(equation 2).
In the present embodiment, the APD is preferably a photodiode of type AD500-9, the temperature coefficient of AD500-9 is 1.5, and when the design GAIN is 100, the bias voltage V is determined by the inherent characteristic of AD500-9biasAnd breakdown voltage VBRThe relationship of (a) to (b) is as follows:
Vbias＝0.92*[VBR+(T-23)]1.5 (equation 3);
wherein the temperature range of T is an industrial-grade temperature range, namely-40 ℃ to +85 ℃.
The temperature of the laser radar working environment is-40 ℃ to +85 ℃, the delta T is 125, and the bias voltage V is obtained according to the formula 3biasThe variation range is as follows:
ΔVbiasΔ T1.5 × 0.92 (formula 4);
APD bias voltage VbiasVariation of and output voltage V-APDThe same applies to the variations of (1):
ΔVbias＝ΔT*1.5*0.92＝ΔIDAC*RFB1(equation 5).
The current adjustment range of the current DAC LTC7106 is shown in Table 2. As can be seen from Table 2, the current DAC operation mode is set to Nominal, Δ Vbias＝ΔIDAC*RFB1The minimum unit of voltage regulation is 1.5V, 1.5V.
The ARM processor sets APD bias voltage VbiasIn the range of (1):
if the temperature of the APD working environment is-40-85 ℃, the temperature coefficient is 1.5, VBRAt 200V, the APD bias voltage V is calculated according to equation (3)biasThe range of (A) is as follows:
bias voltage VbiasMinimum value VL＝0.92*[200+(-40-23)*1.5]＝97.06V；
Bias voltage VbiasMinimum value VH＝0.92*[200+(85-23)*1.5]＝269.56V。
For example: breakdown voltage V of APD when laser radar works in 23 ℃ environmentBRIs 180V.
When the laser radar is in an outdoor working state, the temperature of the APD collected by the temperature sensor is 40 ℃, and the ARM processor calculates the bias voltage of the APD and the current value I output by the current regulation module when the APD is 40 DEG CDACThe following were used:
calculated from equation (3), Vbias(40℃)＝0.92*[180+(40-23)*1.5]＝180.06V；
Vbias(23℃)＝0.92*[180+(23-23)*1.5]＝165.6V；
ΔVbias＝Vbias(40℃)-Vbias(23℃)＝189.06-165.6＝23.46V。
Calculated according to the formula (5),
Figure BDA0002241708110000101
according to the calculation, if the bias voltage of the APD is to be adjusted to 189.06V, only the output current I of the current DAC chip needs to be adjustedDACRegulating to-16 uA.
In the technical scheme of the embodiment of the invention, the software operation flow of the ARM processor is as follows:
Figure BDA0002241708110000102
the above-mentioned embodiments are merely preferred embodiments for fully illustrating the present invention, and the scope of the present invention is not limited thereto. The equivalent substitution or change made by the technical personnel in the technical field on the basis of the invention is all within the protection scope of the invention. The protection scope of the invention is subject to the claims.

Claims (10)

1. The utility model provides a laser radar APD current formula open loop is along with temperature governing system which characterized in that: comprises a processor, a temperature acquisition module, a current regulation module and a DC-DC booster circuit,
the temperature acquisition module is used for acquiring the temperature of the APD in real time and transmitting the temperature to the processor;
the current regulating module is controlled by the processor and is used for outputting a current I capable of being regulatedDAC；
The DC-DC booster circuit is controlled by a current regulation module according to the current I output by the current regulation moduleDACRegulating the output voltage V—APDAn output voltage V of the DC-DC boost circuit—APDFor providing a bias voltage to the APD;
the processor receives the temperature signal output by the temperature acquisition module and generates a current regulation signal for controlling the current regulation module according to the temperature signal;
the processor realizes logic operation and data processing by running a program.
2. The lidar APD current-type open loop temperature regulation system of claim 1, wherein: the processor is an ARM processor.
3. The lidar APD current-type open loop temperature regulation system of claim 1 or claim 2, wherein: the DC-DC Boost circuit comprises a DC-DC Boost circuit, and the DC-DC Boost circuit comprises a DC-DC Boost chip and a peripheral circuit matched with the DC-DC Boost chip.
4. The lidar APD current-type open loop temperature regulation system of claim 3, wherein: the peripheral circuit comprises an inductor (L), a diode I (D1), a resistor I (RFB1), a resistor II (RFB2) and a capacitor I (C1); one end of the inductor is connected with the input end of the DC-DC Boost chip, and the other end of the inductor is connected with the anode of the first diode; the capacitor I is connected in parallel with the whole body formed by connecting the resistor I and the resistor II in series and is connected between the cathode of the diode I and the ground; and the cathode of the diode I is connected with the APD.
5. The lidar APD current-type open loop temperature regulation system of claim 3, wherein: the model of the DC-DCboost chip is LT 8331.
6. The lidar APD current-type open loop temperature regulation system of claim 3, wherein: the DC-DC Boost circuit further comprises a primary voltage doubling circuit, the primary voltage doubling circuit is used for increasing the output voltage of the DC-DC Boost circuit and comprises a second diode (D2), a third diode (D3) and a second capacitor (C2), one end of the second capacitor and the anode of the second diode are connected with a switch control pin (SW) of the DC-DC Boost chip, the cathode of the second diode is connected with the anode of the third diode, and the cathode of the third diode and the other end of the second capacitor are connected with a peripheral circuit of the DC-DC Boost chip.
7. The lidar APD current-type open loop temperature regulation system of claim 1 or claim 2, wherein: the current regulation module comprises a current DAC chip, a control end of the current DAC chip is connected with the processor through an I2C bus or a PMbus, an output end of the current DAC chip is connected with an enabling End (EN) of the DC-DC Boost chip, and a current output end of the current DAC chip is connected with a feedback end (FB) of the DC-DCboost chip.
8. The lidar APD current-type open loop temperature regulation system of claim 7, wherein: the model of the current DAC chip is LTC 7106.
9. The lidar APD current-type open loop temperature regulation system of claim 1 or claim 2, wherein: the temperature acquisition module comprises a temperature sensor chip attached to an APD (avalanche photo diode) and a control end of the temperature sensor chip is connected with the processor through an I2C bus or a PMbus.
10. The lidar APD current-type open loop temperature regulation system of claim 9, wherein: the model of the temperature sensor chip is TMP 117.
CN201911002311.0A 2019-10-21 2019-10-21 Laser radar APD current type open loop temperature-dependent regulating system Pending CN110673684A (en)

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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN200959101Y (en) * 2006-10-12 2007-10-10 宁波中科集成电路设计中心有限公司 Temperature compensator of avalanche photoelectric diode
US20080246944A1 (en) * 2007-04-05 2008-10-09 Brian Redman Photon counting, chirped AM LADAR system and related methods
CN106873701A (en) * 2015-12-13 2017-06-20 田佳聪 A kind of APD bias voltage temperature compensations circuit

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN200959101Y (en) * 2006-10-12 2007-10-10 宁波中科集成电路设计中心有限公司 Temperature compensator of avalanche photoelectric diode
US20080246944A1 (en) * 2007-04-05 2008-10-09 Brian Redman Photon counting, chirped AM LADAR system and related methods
CN106873701A (en) * 2015-12-13 2017-06-20 田佳聪 A kind of APD bias voltage temperature compensations circuit

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Application publication date: 20200110