CN106873701A - A kind of APD bias voltage temperature compensations circuit - Google Patents
A kind of APD bias voltage temperature compensations circuit Download PDFInfo
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- CN106873701A CN106873701A CN201510914909.2A CN201510914909A CN106873701A CN 106873701 A CN106873701 A CN 106873701A CN 201510914909 A CN201510914909 A CN 201510914909A CN 106873701 A CN106873701 A CN 106873701A
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- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
- G05F1/10—Regulating voltage or current
- G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is dc
- G05F1/56—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices
- G05F1/565—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor
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- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Radar, Positioning & Navigation (AREA)
- Automation & Control Theory (AREA)
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Abstract
The present invention discloses a kind of APD bias voltage temperature compensations circuit, and APD bias voltage temperature compensations circuit is made up of ADL5317 drive circuits, MAX5026 booster circuits and temperature sensor circuit and voltage transformation control circuit.In the ADL5317 drive circuits, the pin of chip 1~16 is followed successively by open collector logic output terminal (FALT), APD biass input control end (VSET), low voltage power supply end ((VPLV), High Voltage Power Supply end (VPHV), mode of operation control end (VCLH), APD reverses biased feeder ear ((VAPD), VAPD is tracked and noise filtering end (GARD), APD current mirrors output end (IPDM), and simulation ground (COMM).The VAPD ends of ADL5317 provide the APD reverse bias voltages of work, and IPDM ends can be simultaneously with 1:5 ratio provides the image current of APD, due to needing only provide for APD biass in design, therefore has given up its current mirror circuit, simplifies circuit design.
Description
Technical field
The present invention relates to a kind of APD bias voltage temperature compensations circuit, it is adaptable to field of temperature measurement.
Background technology
In the temperature-measuring system of distributed fibers based on Raman scattering, according to the ratio of the short-pulse laser anti-Stokes light of Raman's back scattering that each point is produced and stokes light in sensor fibre, the space measurement in temperature field to be measured is realized.At normal temperatures, the intensity of the Backward Raman scattering light in optical fiber is only incident intensity 10-9, back scattering optical signal is very faint, therefore photodetector needs using high sensitivity, avalanche gain high, quick response, the silicon of low noise or sows arsenic APD.Arsenic APD is sowed suitable near infrared band, and in telecommunication optical fiber, the wavelength of Raman's rear orientation light is near infrared band, therefore general to select the photoelectric detector pluged with molten metal and sow arsenic APD as temperature-measuring system of distributed fibers, this research sows arsenic APDG8931-20 for target APD from pluging with molten metal for HAMAMATSU companies.Although APD has the advantages that high s/n ratio as signal receiver part, need bias voltage higher, and its gain with temperature changes, thus using when tackle it and do bias voltage temperature compensation, to ensure APD gain constants.For existing temperature compensation, major part is needed to being controlled using microprocessor after temperature survey, and also some circuit designs are more complicated.
The content of the invention
The present invention provides a kind of APD bias voltage temperature compensations circuit, constituted using ADL5317 and LM35 chips, circuit structure is compact, the APD bias voltage temperature compensation circuits being based on have that accuracy and sensitivity is high, the simple advantage of circuit, temperature-compensating can be carried out in many gradient temperature environment, the gain stability of APD is maintained.
The technical solution adopted in the present invention is：
APD bias voltage temperature compensations circuit is made up of ADL5317 drive circuits, MAX5026 booster circuits and temperature sensor circuit and voltage transformation control circuit.
In the ADL5317 drive circuits, the pin of chip 1~16 is followed successively by open collector logic output terminal (FALT), APD biass input control end (VSET), low voltage power supply end ((VPLV), High Voltage Power Supply end (VPHV), mode of operation control end (VCLH), APD reverses biased feeder ear ((VAPD), VAPD is tracked and noise filtering end (GARD), APD current mirrors output end (IPDM), and simulation ground (COMM).The VAPD ends of ADL5317 provide the APD reverse bias voltages of work, and IPDM ends can be simultaneously with 1:5 ratio provides the image current of APD, due to needing only provide for APD biass in design, therefore has given up its current mirror circuit, simplifies circuit design.
In the MAX5026 booster circuits, C23, D22, D23 and C24 constitute network so that output can reach 71V.When the voltage at the FB ends of the booster circuit being made up of MAX5026 is 2.5V, then the high voltage of 71V is exported.By adjusting feedback resistance R23, the voltage at control FB ends so that output end voltage is 65V meets the requirement of ADI5317 high voltage supplies end.Highest output determines that output 65V connects people's circuit up to 71V, after adjustment, and power supply ripple is less than 20mV.
The temperature sensor using TI companies high-precision analog temperature sensor LM35, its supply voltage in 4~20V can normal work, nonlinearity erron is only 0.25 DEG C in the range of -55 DEG C~+150 DEG C, meets system requirements.Under the linear operation mode of ADL5317, the scope of the input voltage on VSET ends is 0.2~2.5V, and the output voltage at VAPD ends changes with the change of VSET ends input voltage.
The voltage control variable changes circuit using LM358 operational amplifiers, including voltage follower circuit and with phase summing circuit.By R31, after R32 and R35 partial pressures, the reference voltage level for obtaining a stabilization by voltage follower U3A is set to this reference voltage level of VREF and is sued for peace with the output voltage VT of LM35 supply voltage VCC, and is exported to the VT ends of ADL5317 by in-phase adder U3B.
The beneficial effects of the invention are as follows：With accuracy and sensitivity is high, the simple advantage of circuit, temperature-compensating can be carried out in many gradient temperature environment, maintain the gain stability of APD.
Brief description of the drawings
The present invention is further described with reference to the accompanying drawings and examples.
Fig. 1 is ADL5317 drive circuits of the invention.
Fig. 2 is MAX5026 booster circuits of the invention.
Fig. 3 is temperature sensor circuit of the invention.
Fig. 4 is voltage transformation control circuit of the invention.
Specific embodiment
The invention will be further described with reference to the accompanying drawings and examples.
Such as Fig. 1, in ADL5317 drive circuits, the pin of chip 1~16 is followed successively by open collector logic output terminal (FALT), APD biass input control end (VSET), low voltage power supply end ((VPLV), High Voltage Power Supply end (VPHV), mode of operation control end (VCLH), APD reverses biased feeder ear ((VAPD), VAPD is tracked and noise filtering end (GARD), APD current mirrors output end (IPDM), and simulation ground (COMM).The VAPD ends of ADL5317 provide the APD reverse bias voltages of work, and IPDM ends can be simultaneously with 1:5 ratio provides the image current of APD, due to needing only provide for APD biass in design, therefore has given up its current mirror circuit, simplifies circuit design.
Such as Fig. 2, in MAX5026 booster circuits, C23, D22, D23 and C24 constitute network so that output can reach 71V.When the voltage at the FB ends of the booster circuit being made up of MAX5026 is 2.5V, then the high voltage of 71V is exported.By adjusting feedback resistance R23, the voltage at control FB ends so that output end voltage is 65V meets the requirement of ADI5317 high voltage supplies end.Highest output determines that output 65V connects people's circuit up to 71V, after adjustment, and power supply ripple is less than 20mV.
Such as Fig. 3, temperature sensor using TI companies high-precision analog temperature sensor LM35, its supply voltage in 4~20V can normal work, nonlinearity erron is only 0.25 DEG C in the range of -55 DEG C~+150 DEG C, meets system requirements.Under the linear operation mode of ADL5317, the scope of the input voltage on VSET ends is 0.2~2.5V, and the output voltage at VAPD ends changes with the change of VSET ends input voltage.
Such as Fig. 4, voltage control variable changes circuit using LM358 operational amplifiers, including voltage follower circuit and with phase summing circuit.By R31, after R32 and R35 partial pressures, the reference voltage level for obtaining a stabilization by voltage follower U3A is set to this reference voltage level of VREF and is sued for peace with the output voltage VT of LM35 supply voltage VCC, and is exported to the VT ends of ADL5317 by in-phase adder U3B.
Claims (8)
1. a kind of APD bias voltage temperature compensations circuit, it is characterized in that：Described temperature-compensation circuit is made up of ADL5317 drive circuits, MAX5026 booster circuits and temperature sensor circuit and voltage transformation control circuit.
2. a kind of APD bias voltage temperature compensations circuit according to claim 1, it is characterized in that：In the ADL5317 drive circuits, the VAPD ends of ADL5317 provide the APD reverse bias voltages of work, and IPDM ends can be simultaneously with 1:5 ratio provides the image current of APD.
3. a kind of APD bias voltage temperature compensations circuit according to claim 1, it is characterized in that：In described MAX5026 booster circuits, C23, D22, D23 and C24 constitute network so that output can reach 71V.
4. a kind of APD bias voltage temperature compensations circuit according to claim 1, it is characterized in that：In described MAX5026 booster circuits, when the voltage at the FB ends of booster circuit is 2.5V, then the high voltage of 71V is exported.
5. a kind of APD bias voltage temperature compensations circuit according to claim 1, it is characterized in that：In the MAX5026 booster circuits, by adjusting feedback resistance R23, the voltage at control FB ends so that output end voltage is 65V meets the requirement of ADI5317 high voltage supplies end.
6. a kind of APD bias voltage temperature compensations circuit according to claim 1, it is characterized in that：The temperature sensor uses the high-precision analog temperature sensor LM35 of TI companies, and its supply voltage can normal work in 4~20V.
7. a kind of APD bias voltage temperature compensations circuit according to claim 1, it is characterized in that：Under the linear operation mode of ADL5317, the output voltage at VAPD ends changes the temperature sensor with the change of VSET ends input voltage.
8. a kind of APD bias voltage temperature compensations circuit according to claim 1, it is characterized in that：The voltage control variable changes circuit using LM358 operational amplifiers, including voltage follower circuit and with phase summing circuit.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510914909.2A CN106873701A (en) | 2015-12-13 | 2015-12-13 | A kind of APD bias voltage temperature compensations circuit |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201510914909.2A CN106873701A (en) | 2015-12-13 | 2015-12-13 | A kind of APD bias voltage temperature compensations circuit |
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| CN106873701A true CN106873701A (en) | 2017-06-20 |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110597341A (en) * | 2019-10-21 | 2019-12-20 | 苏州玖物互通智能科技有限公司 | Current type open loop temperature-dependent regulating system based on FPGA chip |
| CN110658866A (en) * | 2019-10-21 | 2020-01-07 | 苏州玖物互通智能科技有限公司 | Current type closed loop temperature-dependent regulating system based on FPGA chip |
| CN110673684A (en) * | 2019-10-21 | 2020-01-10 | 苏州玖物互通智能科技有限公司 | Laser radar APD current type open loop temperature-dependent regulating system |
-
2015
- 2015-12-13 CN CN201510914909.2A patent/CN106873701A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110597341A (en) * | 2019-10-21 | 2019-12-20 | 苏州玖物互通智能科技有限公司 | Current type open loop temperature-dependent regulating system based on FPGA chip |
| CN110658866A (en) * | 2019-10-21 | 2020-01-07 | 苏州玖物互通智能科技有限公司 | Current type closed loop temperature-dependent regulating system based on FPGA chip |
| CN110673684A (en) * | 2019-10-21 | 2020-01-10 | 苏州玖物互通智能科技有限公司 | Laser radar APD current type open loop temperature-dependent regulating system |
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Application publication date: 20170620 |
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