CN110581083B - Method and system for monitoring position of shielding ring - Google Patents
Method and system for monitoring position of shielding ring Download PDFInfo
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- CN110581083B CN110581083B CN201910914992.1A CN201910914992A CN110581083B CN 110581083 B CN110581083 B CN 110581083B CN 201910914992 A CN201910914992 A CN 201910914992A CN 110581083 B CN110581083 B CN 110581083B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
- H01L22/26—Acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection, in-situ thickness measurement
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
- H01L22/34—Circuits for electrically characterising or monitoring manufacturing processes, e. g. whole test die, wafers filled with test structures, on-board-devices incorporated on each die, process control monitors or pad structures thereof, devices in scribe line
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Abstract
The invention discloses a method for monitoring the position of a shielding ring in the process of manufacturing an advanced graphic film in semiconductor production, which comprises the steps of establishing a rectangular coordinate system for marking the notch position of a wafer; marking the coordinate range of the wafer gap in the rectangular coordinate system; depositing a film; measuring the thickness of the film in the coordinate range of the notch of the wafer; if the film thickness in the coordinate range of the wafer gap is equal to zero, judging that the position of the shielding ring is accurate; and if the film thickness in the coordinate range of the wafer gap is larger than zero, judging that the position of the shielding ring is inaccurate, and calibrating the position of the shielding ring. The invention also discloses a system for monitoring the position of the shielding ring in the advanced graphic film process of semiconductor production. The invention can find and solve the problem of position deviation of the shielding ring in time and avoid the generation of defect clusters near the wafer gap.
Description
Technical Field
The present invention relates to the field of semiconductor manufacturing, and more particularly, to a method for monitoring the position of a shadow ring in an Advanced Patterning Film (APF) process for semiconductor manufacturing. The invention also relates to a system for monitoring the position of the shielding ring in the advanced graphic film process of semiconductor production.
Background
In order to solve the problem of the spear shield, a new process, Advanced Patterning Film (APF) and nitrogen-free anti-reflection layer (N free DARC), is proposed. The Advanced Pattern Film (APF) is used as a carrier for pattern transfer, patterns are firstly transferred to APF film and then transferred to other films, and the manufacturing process mainly comprises the following steps: photoresist coating, photoresist modeling, mask layer modeling, polysilicon etching and mask layer oxidation removal. The Advanced Pattern Film (APF) component is amorphous carbon, and the APF component is used as a mask layer instead of photoresist in the etching process to form a pattern, has high etching selectivity ratio, can be removed after being oxidized by oxygen, is easy to remove, and achieves the aim of removing photoresist (Ash). After the Advanced Pattern Film (APF) technology is applied, the etching effect is obvious.
An important component in the cavity of Advanced Patterning Film (APF) process is a shadow ring (shading ring) which is used to cover the edge of wafer (wafer) during deposition of the film, and the deposition principle of APF is C2H2In Plasma and O2The film is covered on the whole wafer (wafer), so the shadow ring (shadow ring) effectively prevents the amorphous carbon film from depositing on the edge of the wafer (wafer). The glue coating of the subsequent photoetching process does not cover the surface of the whole wafer (wafer), but covers the edge of the wafer (wafer) close to the edge of the waferThe edge is not provided with photoresist, and if the projection (convex part) of the shadow ring (shadow ring) is not aligned with the wafer notch (wafer notch), the notch position is caused to be damaged, and the subsequent process is influenced.
Disclosure of Invention
The invention provides a method for monitoring the position of a shielding ring, which is used for monitoring whether the shielding ring accurately shields a wafer gap in an advanced graphic film process in semiconductor production.
Another objective of the present invention is to provide a system for monitoring the position of a shadow ring, which can monitor whether the shadow ring accurately shields a wafer gap in an advanced patterning thin film process in semiconductor manufacturing.
In order to solve the above technical problems, the present invention provides a method for monitoring the position of a shadow ring in an advanced patterning thin film process for semiconductor manufacturing, comprising the steps of:
s1, establishing a rectangular coordinate system for marking the notch position of the wafer;
s2, marking the coordinate range of the wafer notch in the rectangular coordinate system;
s3, depositing a film;
s4, measuring the film thickness in the wafer notch coordinate range;
s5, if the film thickness in the wafer notch coordinate range is less than or equal to the judgment threshold, judging that the position of the shielding ring is accurate; and if the film thickness in the coordinate range of the wafer notch is larger than the judgment threshold, judging that the position of the shielding ring is inaccurate, and calibrating the position of the shielding ring.
When step S1 is executed, the X axis of the rectangular coordinate system is located on the plane where the top surface of the wafer is located, the Y axis of the rectangular coordinate system is perpendicular to the plane where the top surface of the wafer is located, and the origin of the rectangular coordinate system is located at any point of the top surface of the wafer except the notch position of the wafer.
The method for monitoring the position of the shielding ring is further improved, step S4 is implemented, monitoring points are selected in the range of the notch coordinates of the wafer, and the film thickness of the monitoring points is measured.
The method for monitoring the position of the shielding ring is further improved, and step S4 is implemented to select a monitoring point on the wafer edge arc at the wafer notch.
The method for monitoring the position of the shielding ring is further improved, step S4 is implemented, and a plurality of points located on the arc of the edge of the wafer at the notch of the wafer are selected as monitoring points, the plurality of points at least include point a and point B, the point a and the point B are located on both sides of the midpoint of the arc of the edge of the wafer at the notch of the wafer, and the arc lengths between the point a and the point B are equal to the arc midpoint of the arc of the edge of the wafer at the notch of the wafer.
Further improving the position monitoring method of the shielding ring, the arc length between the point A and the point B and the middle point of the arc of the edge of the wafer at the notch of the wafer is more than or equal to 2.5 mm.
The method for monitoring the position of the shielding ring is further improved, and step S4 is implemented to select two end points of the wafer edge arc at the wafer notch as monitoring points.
The method for monitoring the position of the shielding ring is further improved, and when the step S5 is implemented, the judgment threshold is 0-50 angstroms, preferably 30 angstroms.
The invention provides a shielding ring position monitoring system for advanced graphic film process of semiconductor production, comprising:
the coordinate system establishing module is used for establishing a rectangular coordinate system for marking the notch position of the wafer;
the wafer gap marking module is used for marking the coordinate range of the wafer gap in the rectangular coordinate system;
a film thickness measuring module for measuring the thickness of a deposited film in a production process;
the monitoring point selecting module is used for selecting the monitoring point of the position of the shielding ring;
and the judging module judges whether the position of the shielding ring is accurate or not according to the thickness of the film appearing in the coordinate range of the notch of the wafer.
The shielding ring position monitoring system is further improved, the X axis of the rectangular coordinate system is located on the plane where the top surface of the wafer is located, the Y axis of the rectangular coordinate system is perpendicular to the plane where the top surface of the wafer is located, and the origin of the rectangular coordinate system is located at any point of the top surface of the wafer except the position of the notch of the wafer.
The shielding ring position monitoring system is further improved, and the judging module judges whether the position of the shielding ring is accurate or not in the following mode;
if the film thickness in the coordinate range of the wafer gap is equal to zero, judging that the position of the shielding ring is accurate; and if the film thickness in the coordinate range of the wafer gap is larger than zero, judging that the position of the shielding ring is inaccurate, and calibrating the position of the shielding ring.
The shielding ring position monitoring system is further improved, the monitoring point selecting module selects the monitoring point within the wafer notch coordinate range, and the film thickness of the monitoring point is measured.
The shielding ring position monitoring system is further improved, and a monitoring point selecting module selects a monitoring point to be positioned on the wafer edge arc at the wafer gap.
The shielding ring position monitoring system is further improved, and the monitoring point selecting module selects two end points of the wafer edge arc at the wafer notch as monitoring points.
The shielding ring position monitoring system is further improved, the monitoring point selecting module selects a plurality of points positioned on the wafer edge arc at the wafer gap as monitoring points, the plurality of points at least comprise a point A and a point B, the point A and the point B are positioned on two sides of the center point of the wafer edge arc at the wafer gap, and the arc lengths between the point A and the center point of the wafer edge arc at the wafer gap are equal.
The shielding ring position monitoring system is further improved, and a monitoring point selecting module selects the arc length between the point A and the point B and the middle point of the circular arc of the edge of the wafer at the notch of the wafer to be more than or equal to 2.5 mm.
The shielding ring position monitoring system is further improved, and the judging module judges whether the position of the shielding ring is accurate or not by adopting the following modes: if the film thickness in the coordinate range of the notch of the wafer is less than or equal to the judgment threshold, judging that the position of the shielding ring is accurate; and if the film thickness in the coordinate range of the wafer notch is larger than the judgment threshold, judging that the position of the shielding ring is inaccurate.
The shielding ring position monitoring system is further improved, and the judgment threshold value is 0-50 angstroms, preferably 30 angstroms.
The shielding ring is a circular rubber ring, and has the function of shielding the edge part of the wafer during film deposition, so that the amorphous carbon film can be effectively prevented from being deposited on the edge of the wafer, and the shielding ring is provided with a protrusion (convex part) for shielding the notch position of the wafer. When the shielding ring is in the correct position, the protrusion (convex part) of the shielding ring is matched with the wafer gap, and the wafer gap is shielded. Aiming at the problem that the wafer gap cannot be shielded after the position of the shielding ring deviates, if the position of the shielding ring deviates, the wafer gap also has an APF film, and a peeling particle defect is generated, the principle of the solution provided by the invention is that if the position of the shielding ring deviates, the wafer gap cannot be covered, and the X-axis coordinate of a point at the wafer gap, which is supposed to have the thickness of the APF film of 0-50 angstroms, changes, so that the position of the shielding ring needs to be corrected in time, and the shielding ring is looped back to an accurate position. The invention can find and solve the problem of position deviation of the shielding ring in time and avoid generating a cluster of defects (cluster defects) near the wafer gap.
Drawings
The invention will be described in further detail with reference to the following detailed description and accompanying drawings:
FIG. 1 is a schematic view illustrating the alignment of the shadow ring and the wafer gap.
FIG. 2 is a schematic view of the misalignment between the shadow ring and the wafer gap.
FIG. 3 is a flowchart illustrating a method for monitoring a position of a shadow ring according to a first embodiment of the present invention.
FIG. 4 is an enlarged view of a portion of a wafer gap.
Description of the reference numerals
1 Shielding ring
2 wafer
3 shield ring convex part
4 wafer gap
5 is the edge arc of the wafer at the notch of the notch circle
6. 7 are two ends of the arc of the edge of the wafer at the notch
8 is the center point of the circular arc of the edge of the wafer at the notch
9 is a point A, which is the distance between one side of the arc midpoint of the edge of the wafer at the round notch and the arc midpoint of the edge of the wafer at the round notch, and the arc length is 2.5mm
And 10 is a point B, which is the distance between the other side of the arc midpoint of the edge of the wafer at the circular notch and is 2.5mm from the arc length.
Detailed Description
The embodiments of the present invention are described below with reference to specific embodiments, and other advantages and technical effects of the present invention will be fully apparent to those skilled in the art from the disclosure in the specification. The invention is capable of other embodiments and of being practiced or of being carried out in various ways, and its several details are capable of modification in various respects, all without departing from the general spirit of the invention. It is to be noted that the features in the following embodiments and examples may be combined with each other without conflict.
As shown in FIG. 3, the present invention provides a first embodiment of a shadow ring position monitoring method for advanced patterning thin film process in semiconductor manufacturing, comprising the steps of:
s1, establishing a rectangular coordinate system for marking the notch position of the wafer;
s2, marking the coordinate range of the wafer notch in the rectangular coordinate system;
s3, depositing a film;
s4, measuring the film thickness in the wafer notch coordinate range;
s5, if the film thickness in the wafer notch coordinate range is less than or equal to the judgment threshold, judging that the position of the shielding ring is accurate; and if the film thickness in the coordinate range of the wafer notch is larger than the judgment threshold, judging that the position of the shielding ring is inaccurate, and calibrating the position of the shielding ring.
In the first embodiment of the method for monitoring the position of the shielding ring, a rectangular coordinate system is established to mark the coordinate range of the wafer notch in the rectangular coordinate system, and the thickness of the APF film is measured in the coordinate range of the wafer notch. If the position of the shielding ring is accurate, the thickness of the APF film of all points in the wafer notch coordinate range is less than or equal to the judgment threshold, and if the position of the shielding ring is not accurate, the points with the thickness of the APF film greater than the judgment threshold exist in the wafer notch coordinate range.
The invention provides a second embodiment of a method for monitoring the position of a shadow ring in an advanced graphic film process in semiconductor production, which comprises the following steps:
s1, establishing a rectangular coordinate system for marking the notch position of the wafer; the X axis of the rectangular coordinate system is positioned on the plane of the top surface of the wafer, the Y axis of the rectangular coordinate system is vertical to the plane of the top surface of the wafer, and the origin of the rectangular coordinate system is positioned at any point of the top surface of the wafer except the position of the notch of the wafer;
s2, marking the coordinate range of the wafer notch in the rectangular coordinate system;
s3, depositing a film;
s4, selecting a monitoring point in the coordinate range of the wafer notch, and selecting the monitoring point to be positioned on the wafer edge arc at the wafer notch to measure the film thickness of the monitoring point; in order to avoid efficiency reduction caused by large-scale monitoring, monitoring efficiency is improved by selecting monitoring points;
s5, if the film thickness in the wafer notch coordinate range is less than or equal to the judgment threshold, judging that the position of the shielding ring is accurate; and if the film thickness in the coordinate range of the wafer gap is larger than the judgment threshold, judging that the position of the shielding ring is inaccurate, and calibrating the position of the shielding ring.
The invention provides a third embodiment of a method for monitoring the position of a shadow ring in an advanced graphic film process in semiconductor production, which comprises the following steps:
s1, establishing a rectangular coordinate system for marking the notch position of the wafer; the X axis of the rectangular coordinate system is positioned on the plane of the top surface of the wafer, the Y axis of the rectangular coordinate system is vertical to the plane of the top surface of the wafer, and the origin of the rectangular coordinate system is positioned at any point of the top surface of the wafer except the position of the notch of the wafer;
s2, marking the coordinate range of the wafer notch in the rectangular coordinate system;
s3, depositing a film;
s4, as shown in FIG. 4, selecting a monitoring point within the coordinate range of the wafer notch, and selecting a plurality of points on the arc of the edge of the wafer at the wafer notch as the monitoring point, wherein the plurality of points at least include a point A and a point B, the point A and the point B are located on two sides of the midpoint of the arc of the edge of the wafer at the wafer notch, and the arc lengths between the point A and the point B are equal to the arc midpoint of the arc of the edge of the wafer at the wafer notch; the monitoring points selected in this embodiment include two end points 6, 7 of the circular arc of the edge of the wafer at the circular notch, a middle point 8 of the circular arc of the edge of the wafer at the circular notch, a point 9 at which the distance between one side of the middle point of the circular arc of the edge of the wafer at the circular notch and the middle point of the circular arc of the edge of the wafer at the circular notch is 2.5mm, and a point 10 at which the distance between the other side of the middle point of the circular arc of the edge of the wafer at the circular notch and the middle point of the circular arc of the edge of the wafer at the circular notch is 2.5 mm;
s5, if the film thickness in the wafer notch coordinate range is less than or equal to the judgment threshold, judging that the position of the shielding ring is accurate; and if the film thickness in the coordinate range of the wafer notch is larger than the judgment threshold, judging that the position of the shielding ring is inaccurate, and calibrating the position of the shielding ring.
The present invention provides a fourth embodiment of a method for monitoring the position of a shadow ring in an advanced patterning thin film process for semiconductor manufacturing, comprising the steps of:
s1, establishing a rectangular coordinate system for marking the notch position of the wafer; the X axis of the rectangular coordinate system is positioned on the plane of the top surface of the wafer, the Y axis of the rectangular coordinate system is vertical to the plane of the top surface of the wafer, and the origin of the rectangular coordinate system is positioned at any point of the top surface of the wafer except the position of the notch of the wafer;
s2, marking the coordinate range of the wafer notch in the rectangular coordinate system;
s3, depositing a film;
s4, selecting two ends 6, 7 of the wafer edge arc at the wafer notch as monitoring points. The area of the convex part of the shielding ring is usually larger than or equal to the area of the notch of the wafer, the shielding ring can be fully shielded as long as the film thicknesses of two end points at the edge of the wafer at the notch of the wafer are smaller than or equal to the judging threshold, and the position is not correct if the film thickness of one end point is larger than the judging threshold.
S5, if the film thickness in the wafer notch coordinate range is less than or equal to the judgment threshold, judging that the position of the shielding ring is accurate; and if the film thickness in the coordinate range of the wafer notch is larger than the judgment threshold, judging that the position of the shielding ring is inaccurate, and calibrating the position of the shielding ring. The judgment threshold is 0 to 50 angstroms, preferably 30 angstroms.
The present invention provides a first embodiment of a shadow ring position monitoring system for advanced patterning thin film processes in semiconductor manufacturing, comprising:
the coordinate system establishing module is used for establishing a rectangular coordinate system for marking the notch position of the wafer;
the wafer gap marking module is used for marking the coordinate range of the wafer gap in the rectangular coordinate system;
a film thickness measuring module for measuring the thickness of a deposited film in a production process;
the monitoring point selecting module is used for selecting the monitoring point of the position of the shielding ring;
and the judging module judges whether the position of the shielding ring is accurate or not according to the thickness of the film appearing in the coordinate range of the notch of the wafer.
The present invention provides a second embodiment of a shadow ring position monitoring system for advanced patterning thin film processes in semiconductor manufacturing, comprising:
the coordinate system establishing module is used for establishing a rectangular coordinate system for marking the notch position of the wafer; the X axis of the rectangular coordinate system is positioned on the plane where the top surface of the wafer is positioned, the Y axis of the rectangular coordinate system is perpendicular to the plane where the top surface of the wafer is positioned, and the origin of the rectangular coordinate system is positioned at any point of the top surface of the wafer except the position of the notch of the wafer;
the wafer gap marking module is used for marking the coordinate range of the wafer gap in the rectangular coordinate system;
a film thickness measuring module for measuring the thickness of a deposited film in a production process;
the monitoring point selecting module is used for selecting a monitoring point within the coordinate range of the wafer gap and measuring the film thickness of the monitoring point;
the judging module judges whether the position of the shielding ring is accurate by adopting the following modes: if the film thickness in the coordinate range of the notch of the wafer is less than or equal to the judgment threshold, judging that the position of the shielding ring is accurate; if the film thickness in the coordinate range of the wafer notch is larger than the judgment threshold, the position of the shielding ring is judged to be inaccurate, and the judgment threshold is 0-50 angstroms, preferably 30 angstroms.
The present invention provides a third embodiment of a shadow ring position monitoring system for advanced patterning thin film processes in semiconductor manufacturing, comprising:
the coordinate system establishing module is used for establishing a rectangular coordinate system for marking the notch position of the wafer; the X axis of the rectangular coordinate system is positioned on the plane where the top surface of the wafer is positioned, the Y axis of the rectangular coordinate system is perpendicular to the plane where the top surface of the wafer is positioned, and the origin of the rectangular coordinate system is positioned at any point of the top surface of the wafer except the position of the notch of the wafer;
the wafer gap marking module is used for marking the coordinate range of the wafer gap in the rectangular coordinate system;
a film thickness measuring module for measuring the thickness of a deposited film in a production process;
the monitoring point selecting module is used for selecting a monitoring point within the coordinate range of the wafer notch, selecting the monitoring point on the wafer edge arc at the wafer notch and measuring the film thickness of the monitoring point;
the judging module judges whether the position of the shielding ring is accurate by adopting the following modes: if the film thickness in the coordinate range of the notch of the wafer is less than or equal to the judgment threshold, judging that the position of the shielding ring is accurate; if the film thickness in the coordinate range of the wafer gap is larger than the judgment threshold, the position of the shielding ring is judged to be inaccurate, and the judgment threshold is 0-50 angstroms, preferably 30 angstroms.
The present invention provides a fourth embodiment of a shadow ring position monitoring system for advanced patterning thin film processes in semiconductor manufacturing, comprising:
the coordinate system establishing module is used for establishing a rectangular coordinate system for marking the notch position of the wafer; the X axis of the rectangular coordinate system is positioned on the plane where the top surface of the wafer is positioned, the Y axis of the rectangular coordinate system is perpendicular to the plane where the top surface of the wafer is positioned, and the origin of the rectangular coordinate system is positioned at any point of the top surface of the wafer except the position of the notch of the wafer;
the wafer gap marking module is used for marking the coordinate range of the wafer gap in the rectangular coordinate system;
a film thickness measuring module for measuring the thickness of a deposited film in a production process;
the monitoring point selecting module is used for selecting a monitoring point within the coordinate range of the notch of the wafer, selecting two end points of the edge of the wafer at the notch of the wafer as monitoring points and measuring the film thickness of the monitoring points;
the judging module judges whether the position of the shielding ring is accurate by adopting the following modes: if the thickness of the film in the coordinate range of the wafer gap is less than or equal to the judgment threshold value, judging that the position of the shielding ring is accurate; if the film thickness in the coordinate range of the wafer notch is larger than the judgment threshold, the position of the shielding ring is judged to be inaccurate, and the judgment threshold is 0-50 angstroms, preferably 30 angstroms.
The present invention provides a fifth embodiment of a shadow ring position monitoring system for advanced patterning thin film processes in semiconductor manufacturing, comprising:
the coordinate system establishing module is used for establishing a rectangular coordinate system for marking the notch position of the wafer; the X axis of the rectangular coordinate system is positioned on the plane where the top surface of the wafer is positioned, the Y axis of the rectangular coordinate system is perpendicular to the plane where the top surface of the wafer is positioned, and the origin of the rectangular coordinate system is positioned at any point of the top surface of the wafer except the position of the notch of the wafer;
the wafer gap marking module is used for marking the coordinate range of the wafer gap in the rectangular coordinate system;
a film thickness measuring module for measuring the thickness of a deposited film in a production process;
the monitoring point selecting module selects a plurality of points positioned on the circular arc of the edge of the wafer at the notch of the wafer as monitoring points, wherein the plurality of points at least comprise a point A and a point B, the point A and the point B are positioned on two sides of the middle point of the circular arc of the edge of the wafer at the notch of the wafer, and the arc lengths between the point A and the middle point of the circular arc of the edge of the wafer at the notch of the wafer are equal;
the judging module judges whether the position of the shielding ring is accurate by adopting the following modes: if the film thickness in the coordinate range of the notch of the wafer is less than or equal to the judgment threshold, judging that the position of the shielding ring is accurate; if the film thickness in the coordinate range of the wafer notch is larger than the judgment threshold, the position of the shielding ring is judged to be inaccurate, and the judgment threshold is 0-50 angstroms, preferably 30 angstroms.
The present invention provides a sixth embodiment of a shadow ring position monitoring system for advanced patterning thin film processes in semiconductor manufacturing, comprising:
the coordinate system establishing module is used for establishing a rectangular coordinate system for marking the notch position of the wafer; the X axis of the rectangular coordinate system is positioned on the plane where the top surface of the wafer is positioned, the Y axis of the rectangular coordinate system is perpendicular to the plane where the top surface of the wafer is positioned, and the origin of the rectangular coordinate system is positioned at any point of the top surface of the wafer except the position of a notch of the wafer;
the wafer gap marking module is used for marking the coordinate range of the wafer gap in the rectangular coordinate system;
a film thickness measuring module for measuring the thickness of a deposited film in a production process;
the monitoring point selecting module selects a plurality of points on the wafer edge arc at the wafer notch as monitoring points, the plurality of points at least comprise points A and points B, the points A and the points B are positioned on two sides of the center point of the wafer edge arc at the wafer notch, the arc lengths between the points A and B and the center point of the wafer edge arc at the wafer notch are equal, and the arc lengths between the points A and B and the center point of the wafer edge arc at the wafer notch are more than or equal to 2.5 mm.
The judging module judges whether the position of the shielding ring is accurate by adopting the following modes: if the film thickness in the coordinate range of the notch of the wafer is less than or equal to the judgment threshold, judging that the position of the shielding ring is accurate; if the film thickness in the coordinate range of the wafer notch is larger than the judgment threshold, the position of the shielding ring is judged to be inaccurate, and the judgment threshold is 0-50 angstroms, preferably 30 angstroms.
The present invention has been described in detail with reference to the specific embodiments and examples, but these are not intended to limit the present invention. Many variations and modifications may be made by one of ordinary skill in the art without departing from the principles of the present invention, which should also be considered as within the scope of the present invention.
Claims (18)
1. A method for monitoring the position of a shadow ring is used for the advanced graphic film process of semiconductor production and is characterized by comprising the following steps:
s1, establishing a rectangular coordinate system for marking the notch position of the wafer;
s2, marking the coordinate range of the wafer gap in the rectangular coordinate system;
s3, depositing a film;
s4, measuring the film thickness in the wafer notch coordinate range;
s5, if the film thickness in the wafer notch coordinate range is less than or equal to the judgment threshold, judging that the position of the shielding ring is accurate; and if the film thickness in the coordinate range of the wafer notch is larger than the judgment threshold, judging that the position of the shielding ring is inaccurate, and calibrating the position of the shielding ring.
2. The shadow ring position monitoring method of claim 1, wherein:
when step S1 is executed, the X axis of the rectangular coordinate system is located on the plane where the top surface of the wafer is located, the Y axis of the rectangular coordinate system is perpendicular to the plane where the top surface of the wafer is located, and the origin of the rectangular coordinate system is located at any point on the top surface of the wafer except the position of the notch of the wafer.
3. The shadow ring position monitoring method of claim 1, wherein:
and step S4 is implemented, monitoring points are selected in the wafer notch coordinate range, and the film thickness of the monitoring points is measured.
4. A shadow ring position monitoring method according to claim 3, wherein:
step S4 is executed to select a monitoring point on the wafer edge arc at the wafer notch.
5. The shadow ring position monitoring method of claim 4, wherein:
step S4 is implemented, a plurality of points on the arc of the edge of the wafer at the notch of the wafer are selected as monitoring points, the plurality of points at least comprise points A and points B, the points A and the points B are located on two sides of the center point of the arc of the edge of the wafer at the notch of the wafer, and the arc lengths between the points A and the center point of the arc of the edge of the wafer at the notch of the wafer are equal.
6. The shadow ring position monitoring method of claim 5, wherein: the arc length between the point A and the point B and the arc midpoint of the edge of the wafer at the notch of the wafer is more than or equal to 2.5 mm.
7. The shadow ring position monitoring method of claim 4, wherein:
step S4 is executed to select two end points of the wafer edge arc at the wafer notch as monitoring points.
8. The shadow ring position monitoring method of claim 1, wherein: when step S5 is executed, the threshold is determined to be 0 to 50 angstroms.
9. A shadow ring position monitoring system for advanced patterning thin film processes in semiconductor manufacturing, comprising:
the coordinate system establishing module is used for establishing a rectangular coordinate system for marking the notch position of the wafer;
the wafer gap marking module is used for marking the coordinate range of the wafer gap in the rectangular coordinate system;
a film thickness measuring module for measuring the thickness of a deposited film in a production process;
the monitoring point selecting module is used for selecting the monitoring point of the position of the shielding ring;
and the judging module judges whether the position of the shielding ring is accurate or not according to the thickness of the film appearing in the coordinate range of the notch of the wafer.
10. The shadow ring position monitoring system of claim 9, wherein:
the X axis of the rectangular coordinate system is located on the plane where the top surface of the wafer is located, the Y axis of the rectangular coordinate system is perpendicular to the plane where the top surface of the wafer is located, and the origin of the rectangular coordinate system is located at any point of the top surface of the wafer except the position of the notch of the wafer.
11. The shadow ring position monitoring system of claim 9, wherein: the judging module judges whether the position of the shielding ring is accurate or not in the following mode;
if the film thickness in the coordinate range of the wafer gap is equal to zero, judging that the position of the shielding ring is accurate; and if the film thickness in the coordinate range of the wafer gap is larger than zero, judging that the position of the shielding ring is inaccurate, and calibrating the position of the shielding ring.
12. The shadow ring position monitoring system of claim 9, wherein:
and the monitoring point selecting module is used for selecting the monitoring points within the coordinate range of the wafer gap and measuring the film thickness of the monitoring points.
13. The shadow ring position monitoring system of claim 12, wherein:
and the monitoring point selecting module is used for selecting the monitoring points on the wafer edge arc at the wafer notch.
14. The shadow ring position monitoring system of claim 12, wherein:
and the monitoring point selection module selects two end points of the wafer edge arc at the wafer notch as monitoring points.
15. The shadow ring position monitoring system of claim 14, wherein:
and the monitoring point selecting module selects a plurality of points positioned on the circular arc of the edge of the wafer at the notch of the wafer as monitoring points, wherein the plurality of points at least comprise points A and points B, the points A and the points B are positioned on two sides of the middle point of the circular arc of the edge of the wafer at the notch of the wafer, and the arc lengths between the points A and the middle point of the circular arc of the edge of the wafer at the notch of the wafer are equal.
16. The shadow ring position monitoring system of claim 15, wherein: and the monitoring point selecting module selects the arc length between the point A and the point B and the middle point of the arc of the edge of the wafer at the notch of the wafer to be more than or equal to 2.5 mm.
17. The shadow ring position monitoring system of claim 9, wherein: the judging module judges whether the position of the shielding ring is accurate or not by adopting the following modes: if the film thickness in the coordinate range of the notch of the wafer is less than or equal to the judgment threshold, judging that the position of the shielding ring is accurate; and if the film thickness in the coordinate range of the wafer notch is larger than the judgment threshold, judging that the position of the shielding ring is inaccurate.
18. The shadow ring position monitoring system of claim 17, wherein: the threshold is determined to be 0-50 angstroms.
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