CN110571307A - Photoelectric detection product bonding wire coating process - Google Patents
Photoelectric detection product bonding wire coating process Download PDFInfo
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- CN110571307A CN110571307A CN201910871848.4A CN201910871848A CN110571307A CN 110571307 A CN110571307 A CN 110571307A CN 201910871848 A CN201910871848 A CN 201910871848A CN 110571307 A CN110571307 A CN 110571307A
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- pcb
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- coating process
- wire coating
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Links
- 238000000576 coating method Methods 0.000 title claims abstract description 48
- 238000001514 detection method Methods 0.000 title claims abstract description 25
- 239000003292 glue Substances 0.000 claims abstract description 51
- 239000013078 crystal Substances 0.000 claims abstract description 23
- 239000011248 coating agent Substances 0.000 claims abstract description 20
- 238000000034 method Methods 0.000 claims abstract description 14
- 239000000853 adhesive Substances 0.000 claims abstract description 12
- 230000001070 adhesive effect Effects 0.000 claims abstract description 12
- 238000012360 testing method Methods 0.000 claims abstract description 11
- 238000003466 welding Methods 0.000 claims abstract description 9
- CSDREXVUYHZDNP-UHFFFAOYSA-N alumanylidynesilicon Chemical compound [Al].[Si] CSDREXVUYHZDNP-UHFFFAOYSA-N 0.000 claims abstract description 6
- 238000012216 screening Methods 0.000 claims abstract description 6
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 20
- 238000005476 soldering Methods 0.000 claims description 11
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 10
- 229910052737 gold Inorganic materials 0.000 claims description 10
- 239000010931 gold Substances 0.000 claims description 10
- 229910052742 iron Inorganic materials 0.000 claims description 10
- 238000010521 absorption reaction Methods 0.000 claims description 5
- 238000002834 transmittance Methods 0.000 claims description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 5
- 238000004026 adhesive bonding Methods 0.000 claims description 2
- 238000011056 performance test Methods 0.000 claims description 2
- 238000007654 immersion Methods 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 abstract description 6
- 230000007547 defect Effects 0.000 abstract description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 10
- 229910052709 silver Inorganic materials 0.000 description 7
- 239000004332 silver Substances 0.000 description 7
- 238000010586 diagram Methods 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 230000008021 deposition Effects 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000007774 longterm Effects 0.000 description 2
- 238000012858 packaging process Methods 0.000 description 2
- 239000012790 adhesive layer Substances 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/02002—Arrangements for conducting electric current to or from the device in operations
- H01L31/02005—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/303—Surface mounted components, e.g. affixing before soldering, aligning means, spacing means
- H05K3/305—Affixing by adhesive
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Measurement Of Radiation (AREA)
- Light Receiving Elements (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Analysing Materials By The Use Of Radiation (AREA)
Abstract
The invention belongs to the technical field of manufacturing of photoelectric detection products, and particularly relates to a bonding wire coating process for a photoelectric detection product. The invention comprises the following steps: (a) mounting the X-ray detector, and coating conductive adhesive on the PCB; (b) adhering the photosensitive diode array chip to the surface of the PCB, and carrying out high-temperature curing; (c) carrying out silicon-aluminum wire bonding, and electrically connecting the photosensitive diode array chip with the PCB; (d) dispensing the bonding wires one by using specific glue A, wherein the center of the dispensing position is a bonding point; (e) adhering the crystal to the surface of the chip and curing; (f) covering the glue dispensing points in the step (d) by using specific glue B, and connecting and protecting the crystal and the PCB; (g) pin header welding is carried out on the PCB to obtain a product; (h) and testing the electrical property of the finished product and screening the reliability. The invention has simple process steps and overcomes the defects of the existing wire coating process in the aspects of reliability and dark current.
Description
Technical Field
The invention belongs to the technical field of photoelectric detection product production processes, and particularly relates to a photoelectric detection product bonding wire coating process.
background
with the national emphasis on security work, the security inspection system is widely applied to airports, subway stations and logistics transportation. The key components of the X-ray detector are composed of a scintillator capable of absorbing X-rays and converting the X-rays into visible light and a 16-bit photoelectric detection diode array capable of detecting the visible light, and the X-ray detector is also called as an X-ray sensor.
In the production process of the X-ray detector, the packaging process is an important factor influencing the product performance and reliability. The packaging process comprises the following steps: mounting a chip, bonding, coating wires, adhering crystals, welding pins and the like. The wire coating process is a technology for protecting the bonding wire and the chip by using glue.
In the actual production process, the wire coating process is found to mainly affect the leakage current of the X-ray sensor product and the reliability in the later use process. If a conventional wire coating mode is used, in the long-term use process of a product, due to the influence of temperature and humidity, the volume change of an adhesive layer is large, part of bonding wires and chips can deform, the chips are layered or the bonding wires break, and finally the product fails.
how to reduce the leakage level of the product and ensure the reliability in the later period so as to effectively improve the performance of the X-ray detector is a consideration aspect of the invention.
Object of the Invention
the invention aims to solve the technical problem of providing a bonding wire coating process for a photoelectric detection product aiming at the defects of the prior art. The bonding wire coating process is simple and convenient, has high reliability and high performance, can effectively overcome the defects of dark current and long-term reliability in the conventional wire coating process of the conventional photoelectric detection product, and realizes the X-ray detector with high reliability and high performance.
In order to solve the technical problems, the invention adopts the technical scheme that: a photoelectric detection product bonding wire coating process is characterized by comprising the following steps of:
A photoelectric detection product bonding wire coating process comprises the following steps:
(a) mounting an X ~ ray detector, and coating conductive adhesive with the thickness of 20 ~ 50 mu m on a PCB;
(b) Connecting the single-channel photodiode array chip with the leakage less than 10pA to the surface of the PCB through conductive adhesive, and performing high-temperature curing;
(c) bonding with 0.8 ~ 1.3mil silicon aluminum wires to electrically connect the photodiode array chip and the PCB, and ensuring that the arc height is more than 300 mu m and the bonding tension is more than 5 g;
(d) dispensing the bonding wires one by using specific glue A, wherein the center of a dispensing position is a bonding point, and the dispensing length multiplied by the width = (1 +/-0.2) mm (3 +/-0.3) mm;
(e) adhering crystals with the size of (25.5 +/-0.5) mm multiplied by (4 +/-0.3) mm to the surface of the chip and curing;
(f) Performing strip-shaped gluing by using specific glue B, coating glue dispensing points in the step (d), filling gaps among the crystal, the chip and the PCB, and then performing glue curing;
(g) pin header welding is carried out on the PCB to obtain a product;
(h) and testing the electrical property of the finished product and screening the reliability.
and (b) performing gold deposition treatment on the PCB in the step (a), wherein the thickness of gold is 1 ~ 2 μm.
said high temperature curing in step (b) is at N2the curing is carried out in the atmosphere, and the curing temperature is 140 ~ 160 ℃.
The coefficient of thermal expansion of the glue A in step (d)<30ppm, viscosity of 50000 ~ 60000cPs, Shore hardness of 65 ~ 100HS, volume resistivity of 7 x 1014~5×1015 Ω·cm。
the glue B in the step (f) meets the following conditions that the coefficient of thermal expansion of the glue is less than 100ppm at the concentration of 45ppm, the viscosity is 6000 ~ 7000cPs, the water absorption rate is +0.12% ~ 0.56%, and the light transmittance is more than 92%.
And (g) performing pin arranging welding on the PCB by using an electric soldering iron, wherein the temperature of the electric soldering iron is less than or equal to 350 ℃.
and (h) performing performance test on the finished product by using forward and reverse test equipment, wherein the single-channel electric leakage is less than 50 pA.
And (f) the glue dispensing stress in the step (d) is opposite to that in the step (f).
Compared with the prior art, the invention has the following advantages:
The invention provides a bonding wire coating process technology for improving the performance and reliability of a photoelectric detection product, overcomes the defects of the existing wire coating process in the aspects of reliability and dark current, and the prepared X-ray detector has low electric leakage and strong reliability. The process steps of the invention are simple, the process is compatible with the conventional wire coating process, and the bonding wire protection and the glue low-stress structure are realized by finding appropriate glue and using a glue dispensing mode in the first wire coating; through the mode of coating the silk for the second time, adopt glue that once point is glued the stress and is opposite to glue crystal and PCB board, make the stress offset each other and become littleer, protect bonding silk and crystal handing-over department simultaneously, prevent the unusual inefficacy that electric leakage that humidity and temperature arouse leads to, easy operation, little to the production influence, in the encapsulation production process, need not newly-increased material and equipment.
drawings
fig. 1 is a schematic diagram of a PCB in embodiment 1 of the present invention.
FIG. 2 is a schematic view of a mounting process in example 1 of the present invention.
FIG. 3 is a schematic view of a bonding process in example 1 of the present invention.
FIG. 4 is a schematic view of a first step of a wire coating process in example 1 of the present invention.
FIG. 5 is a schematic view of a bonded crystal in example 1 of the present invention.
FIG. 6 is a schematic drawing of a second step of wire coating in example 1 of the present invention.
FIG. 7 is a schematic view of pin header welding in embodiment 1 of the present invention.
FIG. 8 is a schematic diagram of the product performance and reliability test in example 1 of the present invention.
description of reference numerals: 1-a PCB board; 2-conductive silver adhesive; 3-chip; 4-a bonding wire; 5-A glue dispensing; 6-crystal; 7-B glue coating; 8-row of needles.
The technical solution of the present invention will be further described in detail with reference to the accompanying drawings and the detailed description.
Detailed Description
Example 1
a photoelectric detection product bonding wire coating process comprises the following steps:
(a) mounting an X-ray detector, coating conductive silver adhesive on a conventional PCB substrate, and performing gold deposition treatment on the PCB, wherein the thickness of gold is 1.2 mu m, and the thickness of the conductive silver adhesive is 30 mu m, as shown in figure 1;
(b) Bonding the photodiode array chip to the PCB surface by conductive silver paste, and bonding the chip to the PCB surface at N2Performing high-temperature curing for 2h in the atmosphere, wherein the curing temperature is 145 ℃, and the single-channel leakage of the photodiode array chip is less than 10pA (standard value is 3pA), as shown in FIG. 2;
(c) Bonding with 1.25mil silicon-aluminum wire to electrically connect the photodiode array chip and the PCB, and ensuring that the arc height is more than 300 μm and the bonding tension is more than 5g, as shown in FIG. 3;
(d) dispensing the bonding wires one by using specific glue A, wherein the center of the dispensing position is a bonding point with the size of 1mm x 3mm, the thermal expansion coefficient of the glue is 25 ppm/DEG C, the viscosity is 52560cPs, the Shore hardness is 85HS, and the volume resistivity is 5 multiplied by 1015 Ω · cm, as in fig. 4;
(e) bonding crystals to the chip surface by conventional crystal bonding process and curing, the crystal size on the chip is 25.5mm 4mm, as shown in fig. 5;
(f) and (d) coating the glue dispensing points in the step (d) with specific glue B after the process, connecting and protecting the crystal and the PCB, and curing the glue, wherein the glue meets the following conditions: the coefficient of thermal expansion of the glue is 65 ppm/DEG C, the viscosity is 6850cPs, the water absorption rate is +0.47%, the light transmittance is more than 95%, and the size of the silk coating range is 25.4mm x 2.5mm x 2, as shown in figure 6;
(g) Performing pin arrangement welding on the PCB by using an electric soldering iron, wherein the temperature of the electric soldering iron is 350 ℃, and obtaining a product, as shown in figure 7;
(h) the electrical performance of the finished product is tested by using a forward and reverse test device, and reliability screening is performed, so that the single-channel leakage of the finished product is less than 50pA (the standard value is 15pA), as shown in figure 8.
And (f) the glue dispensing stress in the step (d) is opposite to that in the step (f).
Example 2
A photoelectric detection product bonding wire coating process comprises the following steps:
(a) mounting an X-ray detector, coating conductive silver adhesive on a conventional PCB substrate, and performing gold deposition process on the PCB, wherein the thickness of gold is 2 μm, and the thickness of the conductive silver adhesive is 50 μm;
(d) Bonding the photodiode array chip to the PCB surface by conductive silver paste, and bonding the chip to the PCB surface at N2Carrying out high-temperature curing for 2h in the atmosphere, wherein the curing temperature is 160 ℃, and the single-channel leakage of the photodiode array chip is less than 10 pA;
(c) Bonding with 1.25mil silicon-aluminum wires to electrically connect the photodiode array chip and the PCB, and ensuring that the arc height is more than 300 μm and the bonding tension is more than 5 g;
(d) Dispensing the bonding wires one by using specific glue A, wherein the center of the dispensing position is a bonding point with the size of 1mm x 3mm, the thermal expansion coefficient of the glue is 25 ppm/DEG C, the viscosity is 60000cPs, the Shore hardness is 100HS, and the volume resistivity is 5 multiplied by 1015 Ω·cm；
(e) bonding crystals to the surface of a chip by a conventional crystal bonding process and curing, wherein the size of the crystals on the chip is 25.5mm by 4 mm;
(f) and (d) coating the glue dispensing points in the step (d) with specific glue B after the process, connecting and protecting the crystal and the PCB, and curing the glue, wherein the glue meets the following conditions: the thermal expansion coefficient of the glue is 65 ppm/DEG C, the viscosity is 7000cPs, the water absorption rate is plus 0.12 percent, the light transmittance is more than 92 percent, and the size of the wire coating range is 25.4mm x 2.5mm x 2;
(g) Carrying out pin arrangement welding on the PCB by using an electric soldering iron, wherein the temperature of the electric soldering iron is 350 ℃, and obtaining a product;
(h) And testing the electrical property of the finished product by using a forward and reverse test device and performing reliability screening, wherein the single-channel leakage of the finished product is less than 50pA (the standard value is 15 pA).
and (f) the glue dispensing stress in the step (d) is opposite to that in the step (f).
Example 3
a photoelectric detection product bonding wire coating process comprises the following steps:
(a) Mounting an X-ray detector, coating conductive silver adhesive on a conventional PCB substrate, and performing gold deposition process on the PCB, wherein the thickness of gold is 1 μm, and the thickness of the conductive silver adhesive is 20 μm;
(b) Bonding the photodiode array chip to the PCB surface by conductive silver paste, and bonding the chip to the PCB surface at N2Carrying out high-temperature curing for 2h in the atmosphere, wherein the curing temperature is 140 ℃, and the single-channel electric leakage of the photodiode array chip is less than 10pA (the standard value is 3 pA);
(c) bonding with 1.25mil silicon-aluminum wires to electrically connect the photodiode array chip and the PCB, and ensuring that the arc height is more than 300 μm and the bonding tension is more than 5 g;
(d) Dispensing the bonding wires one by using specific glue A, wherein the center of the dispensing position is a bonding point with the size of 1 mm/3 mm, the thermal expansion coefficient of the glue is 25 ppm/DEG C, the viscosity is 50000cPs, the Shore hardness is 65 HS, and the volume resistivity is 7 multiplied by 1014 Ω·cm；
(e) Bonding crystals to the surface of a chip by a conventional crystal bonding process and curing, wherein the size of the crystals on the chip is 25.5mm by 4 mm;
(f) and (d) coating the glue dispensing points in the step (d) with specific glue B after the process, connecting and protecting the crystal and the PCB, and curing the glue, wherein the glue meets the following conditions: the thermal expansion coefficient of the glue is 65 ppm/DEG C, the viscosity is 6000cPs, the size of the wire coating range is 25.4mm 2.5mm 2, the water absorption rate is plus 0.56 percent, and the light transmittance is more than 95 percent;
(g) Carrying out pin arrangement welding on the PCB by using an electric soldering iron, wherein the temperature of the electric soldering iron is 300 ℃, and obtaining a product;
(h) And testing the electrical property of the finished product by using a forward and reverse test device and performing reliability screening, wherein the single-channel leakage of the finished product is less than 50pA (the standard value is 15 pA).
and (f) the glue dispensing stress in the step (d) is opposite to that in the step (f).
in the scope of the present invention, the schematic diagram is only illustrated by taking the type of 16-bit low-energy X-ray detector as an example, and the present invention may also be applied to other photoelectric detection products with higher bit number and higher detection energy, such as wire coating process of 64-bit, 128-bit and high-pixel photoelectric detection products.
the above description is only for the preferred embodiment of the present invention, and is not intended to limit the present invention in any way. Any simple modification, change and equivalent changes of the above embodiments according to the principles of the present invention are still within the protection scope of the technical solution of the present invention.
Claims (8)
1. A photoelectric detection product bonding wire coating process is characterized by comprising the following steps:
(a) mounting an X ~ ray detector, and coating conductive adhesive with the thickness of 20 ~ 50 mu m on a PCB;
(b) Connecting the single-channel photodiode array chip with the leakage less than 10pA to the surface of the PCB through conductive adhesive, and performing high-temperature curing;
(c) bonding with 0.8 ~ 1.3mil silicon aluminum wires to electrically connect the photodiode array chip and the PCB, and ensuring that the arc height is more than 300 mu m and the bonding tension is more than 5 g;
(d) Dispensing the bonding wires one by using specific glue A, wherein the center of a dispensing position is a bonding point, and the dispensing length multiplied by the width = (1 +/-0.2) mm (3 +/-0.3) mm;
(e) Adhering crystals with the size of (25.5 +/-0.5) mm multiplied by (4 +/-0.3) mm to the surface of the chip and curing;
(f) Performing strip-shaped gluing by using specific glue B, coating glue dispensing points in the step (d), filling gaps among the crystal, the chip and the PCB, and then performing glue curing;
(g) pin header welding is carried out on the PCB to obtain a product;
(h) And testing the electrical property of the finished product and screening the reliability.
2. the bonding wire coating process for the photoelectric detection product according to claim 1, wherein in the step (a), a gold immersion process is performed on the PCB, and the thickness of gold is 1 ~ 2 μm.
3. The bonding wire coating process for photoelectric detection product according to claim 1, wherein the high temperature curing in step (b) is performed in N2the curing is carried out in the atmosphere, and the curing temperature is 140 ~ 160 ℃.
4. the bonding wire coating process for photoelectric detection product according to claim 1, wherein the coefficient of thermal expansion of the glue A in step (d)<30ppm, viscosity of 50000 ~ 60000cPs, Shore hardness of 65 ~ 100HS, volume resistivity of 7 x 1014~5×1015 Ω·cm。
5. the bonding wire coating process of the photoelectric detection product according to claim 1, wherein the glue B in the step (f) satisfies the conditions that the coefficient of thermal expansion of the glue is less than 45ppm and the viscosity is 6000 ~ 7000cPs, the water absorption rate is +0.12% ~ 0.56%, and the light transmittance is more than 92%.
6. The bonding wire coating process of the photoelectric detection product as claimed in claim 1, wherein in the step (g), electric soldering iron is used for pin arrangement soldering of the PCB, and the temperature of the electric soldering iron is less than or equal to 350 ℃.
7. The photodetection product bonding wire coating process according to claim 1, characterized in that in step (h) forward and reverse testing equipment is used to perform performance tests on the finished product with single channel leakage < 50 pA.
8. the bonding wire coating process for photoelectric detection products according to claim 1, wherein the glue dispensing stress in step (f) is opposite to that in step (d).
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| CN201910871848.4A CN110571307B (en) | 2019-09-16 | 2019-09-16 | Photoelectric detection product bonding wire coating process |
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| CN201910871848.4A CN110571307B (en) | 2019-09-16 | 2019-09-16 | Photoelectric detection product bonding wire coating process |
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2019
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Patent Citations (7)
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|---|---|---|---|---|
| US20070053639A1 (en) * | 2005-09-05 | 2007-03-08 | Mitsubishi Electric Corporation | Optical module |
| CN102074540A (en) * | 2010-11-26 | 2011-05-25 | 天水华天科技股份有限公司 | Matrix dual in-line package (DIP) lead frame, integrated circuit (IC) packages based on frame and production method of IC packages |
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| CN110571307B (en) | 2021-06-01 |
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