CN110570893B - Flash automatic screening system and screening method for realizing voltage bias - Google Patents
Flash automatic screening system and screening method for realizing voltage bias Download PDFInfo
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- CN110570893B CN110570893B CN201810569608.4A CN201810569608A CN110570893B CN 110570893 B CN110570893 B CN 110570893B CN 201810569608 A CN201810569608 A CN 201810569608A CN 110570893 B CN110570893 B CN 110570893B
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- 238000012216 screening Methods 0.000 title claims abstract description 34
- 238000000034 method Methods 0.000 title claims abstract description 19
- 239000002245 particle Substances 0.000 claims abstract description 90
- 230000032683 aging Effects 0.000 claims abstract description 66
- 238000012360 testing method Methods 0.000 claims abstract description 38
- 238000004891 communication Methods 0.000 claims abstract description 9
- 239000007787 solid Substances 0.000 claims description 2
- 230000009286 beneficial effect Effects 0.000 abstract description 2
- 230000006870 function Effects 0.000 description 7
- 239000003990 capacitor Substances 0.000 description 6
- 238000010586 diagram Methods 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 2
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/30—Power supply circuits
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/56—External testing equipment for static stores, e.g. automatic test equipment [ATE]; Interfaces therefor
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Abstract
The invention discloses a Flash automatic screening system and method for realizing voltage bias, which comprises an upper computer for sending an aging command and a voltage value parameter, a control chip connected with the upper computer, and an SSD main control connected with the control chip, wherein the SSD main control is connected with a voltage bias module for controlling voltage bias. The invention has the beneficial effects that: the scheme adopts a framework of 'an upper computer, an MCU control board, an SSD master control and Flash particles', and carries out batch aging test on the Flash particles. Flash particle bias voltage parameters are set through upper computer software, commands with the parameters are sent to an SSD control chip through CAN and serial port communication, the SSD main control erases, writes and reads the Flash particles, meanwhile, the voltage bias module changes the power supply voltage of the Flash particles, automatic screening of the Flash particles with the voltage bias test is achieved, the voltage bias function CAN be synchronously performed with the Flash particle aging test, and independent control is not needed.
Description
Technical Field
The invention relates to the field of semiconductor testing, in particular to a Flash automatic screening system and method for realizing voltage bias.
Background
The existing Flash automatic screening scheme generally focuses on improving the simultaneous measurement number of Flash particles, and a system for completing screening does not have a voltage bias function. If the voltage bias function and other test items (such as temperature and humidity tests) need to be carried out, the voltage bias function and other test items can only be independently controlled through test equipment (such as a temperature box), and the prior art has the defect that the voltage bias test can only act on all Flash particles under the same test and cannot be synchronously carried out with the aging of the Flash particles.
Disclosure of Invention
In order to solve the defects of the prior art, the invention aims to provide an automatic Flash screening system for realizing voltage bias.
In order to achieve the purpose, the technical scheme of the invention is as follows:
the Flash automatic screening system for realizing voltage deviation comprises an upper computer, a control chip and an SSD (solid State disk) main control, wherein the upper computer sends an aging command and voltage value parameters, the control chip is connected with the upper computer, the SSD main control is connected with the control chip, and the SSD main control is connected with a voltage deviation module used for controlling voltage deviation.
Furthermore, the upper computer is connected with a plurality of control panels through a CAN bus, and the control chip is arranged on the control panels.
Further, the control chip is a microcontroller.
Furthermore, a plurality of serial ports are arranged on the control chip, the control chip is connected with the SSD main control through the serial ports, and the SSD main control is connected with and controls the plurality of Flash particles.
Further, the SSD master control model is 88SS1074, the voltage bias module model is MAX5435, and the SSD master control controls the voltage bias module to adjust the voltage of the Flash memory base through an I2C bus, thereby controlling the power supply voltage of the Flash particles.
Further, the upper computer is a computer.
The invention also provides a Flash automatic screening method for realizing voltage bias, which is carried out based on any one of the Flash automatic screening systems for realizing voltage bias, and comprises the following steps of:
setting a Flash particle bias voltage parameter through an upper computer;
sending an aging command with a pull-bias voltage parameter to an SSD control chip;
and the SSD master control executes the Flash particle aging according to the aging command and adjusts the voltage value of the Flash particles to perform a voltage bias test.
Further, the step of sending the aging command with the pull-bias voltage parameter to the SSD control chip includes,
and sending the aging command with the pull-bias voltage parameter to the SSD master control through CAN bus and serial port communication.
Further, the SSD master control executes the Flash particle aging according to the aging command and adjusts the voltage value of the Flash particles to perform the voltage bias test step, which comprises the steps of,
and controlling the voltage bias module to adjust the power supply voltage of the Flash particles according to the bias voltage parameter to perform voltage bias test while controlling the Flash particles to erase, write and read according to the aging command by the SSD master controller.
Further, after the step of performing the Flash particle aging by the SSD master control according to the aging command and adjusting the voltage value of the Flash particle to perform the voltage bias test, the method includes,
and reporting the Flash particle state and the test result to an upper computer.
The invention has the beneficial effects that: the scheme adopts a framework of 'an upper computer, an MCU control board, an SSD master control and Flash particles', and carries out batch aging test on the Flash particles. Flash particle bias voltage parameters are set through upper computer software, commands with the parameters are sent to an SSD control chip through CAN and serial port communication, the SSD main control erases, writes and reads the Flash particles, meanwhile, the voltage bias module changes the power supply voltage of the Flash particles, automatic screening of the Flash particles with the voltage bias test is achieved, the voltage bias function CAN be synchronously performed with the Flash particle aging test, and independent control is not needed.
Drawings
FIG. 1 is a block diagram of a Flash automatic screening system for implementing voltage bias according to the present invention;
FIG. 2 is a circuit diagram of an SSD master control according to the present invention;
FIG. 3 is a circuit diagram of a voltage pull-tab module of the present invention;
FIG. 4 is a flowchart of a method for implementing an automatic Flash screening method with voltage bias according to the present invention.
Detailed Description
For the purpose of illustrating the spirit and objects of the present invention, the present invention will be further described with reference to the accompanying drawings and specific embodiments.
The pull-out bias voltage is that a certain system can normally work at upper and lower threshold values of the rated voltage, for example, a system rated voltage is 12 v, but actually the system can work normally within a range of 80% to 120% of the rated voltage, that is, the system can work normally between 9 v and 15 v, and the voltage of the upper and lower threshold values is the pull-out bias voltage.
Referring to fig. 1 to 3, an embodiment of the present invention provides an automatic Flash screening system for implementing voltage bias, including an upper computer 10 that issues an aging command and a voltage value parameter, a control chip 20 connected to the upper computer, and an SSD main control 30 connected to the control chip 20, where the SSD main control 30 is connected to a voltage bias module 40 for controlling voltage bias.
Specifically, the upper computer 10 is connected with a plurality of control panels through a CAN bus, and the control chip 20 is arranged on the control panels. Specifically, the control chip 20 is a Microcontroller (MCU) provided with a plurality of serial ports, and is communicatively connected to a plurality of different SSD main controls 30 via the serial ports, and each SSD main control 30 can be individually connected to a plurality of Flash particles 50. The aging of the Flash particles 50 is controlled and the voltage value of the Flash particles 50 is adjusted by the SSD master control 30.
The control chip 20 is provided with a plurality of serial ports, the control chip 20 is connected with the SSD master control 30 through the serial ports, the SSD master control 30 is connected with and controls a plurality of Flash particles 50, each SSD master control 30 can be connected with a plurality of Flash particles 50, and each Flash particle connected to the aging board is independently controlled to perform aging operation and voltage bias.
As shown in fig. 2 and fig. 3, in this embodiment, the SSD main control 30 is a 88SS1074 chip, the voltage bias module 40 is a MAX5435 chip, and the SSD main control 30 controls the voltage bias module 40 through the I2C bus to adjust the voltage of the Flash memory base (Flash Socket for loading Flash particles), so as to control the power supply voltage of the individual Flash particles 50, and perform the voltage bias test.
Referring to fig. 3, a pin of VDD terminal of the chip MAX5435 is connected to SYS 5V0, and a capacitor bank formed by two capacitors connected in parallel is connected thereto; an L terminal pin of the chip MAX5435 is connected with one end of the resistor R611, and the other end of the resistor R611 is grounded; the W terminal pin of the chip MAX5435 and the FB terminal pin of the chip U75 are simultaneously connected with a first end of a resistor R610 and a first end of a capacitor C645, a second end of the resistor R610 and a second end of the capacitor C645 are connected with a SW terminal pin of the chip U75 and a capacitor group formed by three capacitors (C649, C646 and C648) in parallel, and specifically, the model of the chip U75 is TPS 62067.
Specifically, the upper computer 10 is a computer, a corresponding screening program (Flash proofing Tool) is run on the computer (PC), and the aging command can be uniformly sent downwards through a multithread design to control the SSD main control 30 arranged on the aging board to execute the aging command, and specifically, the aging command includes a voltage parameter for controlling the voltage value of the Flash particles 50 in the scheme. The method can perform voltage bias on one or more Flash particles 50 while performing aging of the Flash particles 50, and an operator can perform the whole screening process simply and directly by clicking a start button on a computer.
Specifically, the aging command is transmitted to Firmware in the SSD main control 30 through the CAN and UART communication, and the Firmware receives the aging command from the upper computer 10 to execute the aging of the Flash granule, controls the voltage of the Flash granule 50, and reports the status and the result upward.
The scheme adopts a framework of 'an upper computer 10, a control chip 20, an SSD master control 30 and Flash particles 50' to carry out batch aging test on the Flash particles 50. The method comprises the steps that the bias voltage parameters of the Flash particles 50 are set through software of an upper computer 10, commands with the parameters are sent to an SSD control chip 20 through CAN and serial port communication, the SSD main control 30 conducts erasing, writing and reading on the Flash particles 50, meanwhile, the voltage bias module 40 changes the power supply voltage of the Flash particles 50, automatic screening of the Flash particles 50 with the voltage bias test is achieved, the voltage bias function CAN be conducted synchronously with the aging test of the Flash particles 50, and independent control is not needed.
Referring to fig. 4, the present invention further provides a Flash automatic screening method for implementing voltage bias, which is performed based on any one of the Flash automatic screening systems for implementing voltage bias, and includes the following steps:
and S10, setting a Flash particle bias voltage parameter through an upper computer.
And S20, sending the aging command with the bias voltage parameter to the SSD control chip.
And S30, the SSD master control executes the Flash particle aging according to the aging command, and adjusts the voltage value of the Flash particles to perform the voltage bias test.
And S40, reporting the Flash particle state and the test result to an upper computer.
And for the step S10, the upper computer is a computer, and the computer (PC) runs a corresponding screening program (Flash screening Tool), and uniformly sends the aging command downward through the multithread design, and controls the SSD main control arranged on the aging board to execute the aging command, wherein the aging command includes a voltage parameter for controlling the voltage value of the Flash particles in the scheme. The method can perform voltage bias on single or multiple Flash particles while performing Flash particle aging, and an operator can perform the whole screening process simply and directly by clicking a start button on a computer.
And step S20, when the aging command is issued, the bias voltage for a single Flash particle is issued simultaneously in a parameter mode, the SSD master control controls the Flash particle to erase, write, read and age the Flash particle according to the aging command, and controls the voltage value of the specific Flash particle according to the voltage parameter contained in the aging command to perform voltage bias test and improve the efficiency of Flash automatic screening.
Specifically, step S20 includes:
and step S21, sending the aging command with the pull-bias voltage parameter to the SSD master control through CAN bus and serial port communication.
For step S21, when performing the screening, the upper computer issues the aging command to the control chip, the control chip issues the aging command to the corresponding SSD main control, and the SSD main control controls the corresponding Flash particles to perform erasing, reading, writing (aging) and voltage bias. Specifically, the control chip is connected with the upper computer through the CAN bus and performs data transmission, and the control chip is connected with the SSD master control through serial port communication and performs data transmission.
And step S30, transmitting the aging command to the SSD master control, then transmitting the aging command to Firmware in the SSD master control, receiving the command from the upper computer by the Firmware to perform aging of the particles, and simultaneously adjusting the voltage value of the Flash particles to realize automatic screening of the Flash particles with voltage bias test, wherein the voltage bias function can be synchronously performed with the aging test of the Flash particles, and the Flash particles do not need to be controlled independently to be tested or aged, so that the screening efficiency is improved.
Specifically, step S30 includes:
and S31, controlling the Flash particles to erase, write and read by the SSD master control according to the aging command, and controlling the voltage bias module to adjust the power supply voltage of the Flash particles according to the bias voltage parameter to perform a voltage bias test.
For step S31, the erasing and writing read operation of the Flash particles is performed by SSD master control, the voltage bias of the Flash particles is controlled by the SSD master control voltage bias module, and the voltage bias module adjusts the voltage value of the designated Flash particles according to the voltage parameter in the aging command to perform the voltage bias test.
For step S40, after the aging operation or the voltage bias operation is finished, the test result and the state of the Flash particle are uploaded, so that the operator can accurately determine the state and performance of the Flash particle.
The scheme adopts a framework of 'an upper computer, a control chip, SSD master control and Flash particles' to carry out batch aging test on the Flash particles. Flash particle bias voltage parameters are set through upper computer software, commands with the parameters are sent to an SSD control chip through CAN and serial port communication, the SSD main control erases, writes and reads the Flash particles, meanwhile, the voltage bias module changes the power supply voltage of the Flash particles, automatic screening of the Flash particles with the voltage bias test is achieved, the voltage bias function CAN be synchronously performed with the Flash particle aging test, and independent control is not needed.
The above description is only a preferred embodiment of the present invention, and not intended to limit the scope of the present invention, and all modifications of equivalent structures and equivalent processes, which are made by using the contents of the present specification and the accompanying drawings, or directly or indirectly applied to other related technical fields, are included in the scope of the present invention.
Claims (5)
1. A Flash automatic screening system for realizing voltage bias is characterized by comprising an upper computer, a control chip and an SSD (solid State disk) main control, wherein the upper computer sends an aging command and voltage value parameters;
the upper computer is connected with a plurality of control panels through a CAN bus, and the control chips are arranged on the control panels;
the control chip is a microcontroller;
the control chip is provided with a plurality of serial ports and is connected with an SSD main control through the serial ports, and the SSD main control is connected with and controls a plurality of Flash particles;
the SSD master control is 88SS1074, the voltage bias module is MAX5435, and the SSD master control controls the voltage bias module to adjust the voltage of the Flash memory base through an I2C bus so as to control the power supply voltage of the Flash particles.
2. The Flash automation screening system for realizing voltage bias according to claim 1, wherein the upper computer is a computer.
3. A Flash automatic screening method for realizing voltage bias is characterized by being carried out based on the Flash automatic screening system for realizing voltage bias of any one of claims 1 or 2, and comprising the following steps of:
setting a Flash particle bias voltage parameter through an upper computer;
sending an aging command with a pull-bias voltage parameter to an SSD control chip;
the SSD master control executes the Flash particle aging according to the aging command, and adjusts the voltage value of the Flash particles to perform a voltage bias test;
the SSD master control executes the Flash particle aging according to the aging command and adjusts the voltage value of the Flash particles to perform the voltage bias test step, which comprises the following steps,
and controlling the voltage bias module to adjust the power supply voltage of the Flash particles according to the bias voltage parameter to perform voltage bias test while controlling the Flash particles to erase, write and read according to the aging command by the SSD master controller.
4. The Flash automation screening method for realizing voltage bias according to claim 3, wherein the step of sending the aging command with the bias voltage parameter to the SSD control chip includes,
and sending the aging command with the pull-bias voltage parameter to the SSD master control through CAN bus and serial port communication.
5. The Flash automation screening method for realizing voltage bias as claimed in claim 3, wherein after the step of the SSD master executing Flash particle aging according to the aging command and adjusting the voltage value of the Flash particle to perform voltage bias test, the method comprises,
and reporting the Flash particle state and the test result to an upper computer.
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| CN104572381A (en) * | 2015-02-04 | 2015-04-29 | 浪潮电子信息产业股份有限公司 | Method for voltage bias for memory through BIOS |
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