CN110549203B - Grinding and polishing device - Google Patents

Grinding and polishing device Download PDF

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Publication number
CN110549203B
CN110549203B CN201910847141.XA CN201910847141A CN110549203B CN 110549203 B CN110549203 B CN 110549203B CN 201910847141 A CN201910847141 A CN 201910847141A CN 110549203 B CN110549203 B CN 110549203B
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sample
along
sleeve
base
polished
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CN110549203A (en
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李亨特
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Yangtze Memory Technologies Co Ltd
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Yangtze Memory Technologies Co Ltd
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B19/00—Single-purpose machines or devices for particular grinding operations not covered by any other main group
    • B24B19/22—Single-purpose machines or devices for particular grinding operations not covered by any other main group characterised by a special design with respect to properties of the material of non-metallic articles to be ground
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B29/00—Machines or devices for polishing surfaces on work by means of tools made of soft or flexible material with or without the application of solid or liquid polishing agents
    • B24B29/02—Machines or devices for polishing surfaces on work by means of tools made of soft or flexible material with or without the application of solid or liquid polishing agents designed for particular workpieces
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B41/00—Component parts such as frames, beds, carriages, headstocks
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B41/00—Component parts such as frames, beds, carriages, headstocks
    • B24B41/02—Frames; Beds; Carriages
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B41/00—Component parts such as frames, beds, carriages, headstocks
    • B24B41/06—Work supports, e.g. adjustable steadies
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N1/00—Sampling; Preparing specimens for investigation
    • G01N1/28—Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q
    • G01N1/286—Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q involving mechanical work, e.g. chopping, disintegrating, compacting, homogenising
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N1/00—Sampling; Preparing specimens for investigation
    • G01N1/28—Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q
    • G01N1/32—Polishing; Etching
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N1/00—Sampling; Preparing specimens for investigation
    • G01N1/28—Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q
    • G01N1/286—Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q involving mechanical work, e.g. chopping, disintegrating, compacting, homogenising
    • G01N2001/2866—Grinding or homogeneising

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Sampling And Sample Adjustment (AREA)

Abstract

The invention relates to the technical field of semiconductor manufacturing, in particular to a grinding and polishing device. The grinding and polishing device comprises: the T-shaped die holder comprises a first beam extending along a first direction and a second beam connected with the first beam and extending along a second direction, and the first direction is perpendicular to the second direction; the base is positioned on the first beam and used for adjusting the horizontal state of the sample to be polished along the first direction; the first adjusting structure is connected with the base and used for driving the base to move along a third direction and displaying a first height of the base extending out of the first beam, and the third direction is perpendicular to the first direction and the second direction. The invention improves the control precision of the polishing height of the sample to be polished, improves the polishing quality and further improves the smoothness and the analyzability of the semiconductor product.

Description

Grinding and polishing device
Technical Field
The invention relates to the technical field of semiconductor manufacturing, in particular to a grinding and polishing device.
Background
As technology develops, the semiconductor industry continues to seek new ways to produce such that each memory die in a memory device has a greater number of memory cells. In non-volatile memories, such as NAND memories, one way to increase memory density is through the use of vertical memory arrays, i.e., 3D NAND (three-dimensional NAND) memories; with higher and higher integration, 3D NAND memories have evolved from 32 layers to 128 layers, and even higher.
In the failure analysis process of semiconductor devices such as 3D NAND memories, polishing is one of the important steps in experimental processing of semiconductor structures to form flat surfaces. However, in the conventional polishing device, the precision control of the sample polishing is poor, and the quantitative control cannot be realized, so that the quality of the polished sample is affected, and even the polished sample is discarded in severe cases.
Therefore, how to improve the control of the grinding and polishing precision of the sample in the grinding and polishing process and improve the grinding and polishing quality is a technical problem to be solved urgently at present.
Disclosure of Invention
The invention provides a grinding and polishing device, which is used for solving the problem that the conventional grinding and polishing device has poor control on the grinding and polishing precision of a sample so as to improve the grinding and polishing quality of the sample.
In order to solve the above problems, the present invention provides a polishing apparatus comprising:
the T-shaped die holder comprises a first beam extending along a first direction and a second beam connected with the first beam and extending along a second direction, and the first direction is perpendicular to the second direction;
the base is positioned on the first beam and used for adjusting the horizontal state of the sample to be polished along the first direction;
the first adjusting structure is connected with the base and used for driving the base to move along a third direction and displaying a first height of the base extending out of the first beam, and the third direction is perpendicular to the first direction and the second direction.
Preferably, the first beam comprises a first surface facing the grinding table and a second surface opposite to the first surface;
the base is positioned on the first surface and can extend out of the first surface along the third direction;
the first adjustment structure extends the first beam from the second surface.
Preferably, the first adjustment structure includes:
a first knob;
one end of the first screw is connected with the base, the other end of the first screw is connected with the first knob, and the first knob is used for driving the first screw to move in a telescopic mode along the axial direction of the first screw so as to adjust the first height of the base extending out of the first surface.
Preferably, the first adjusting structure further comprises:
the first sleeve is located on the second surface, part of the first screw rod is sleeved in the first sleeve, the first knob is located at the end portion, far away from the second surface, of the first sleeve, and first scales are arranged on the surface of the first sleeve and used for displaying the length of the first screw rod extending out of the first sleeve along the axial direction of the first screw rod.
Preferably, the second beam is connected with the middle part of the first beam;
the number of the bases is two, and the two bases are symmetrically distributed around the second beam;
the number of the first adjusting structures is two, and the two first adjusting structures are connected with the two bases in a one-to-one correspondence mode.
Preferably, the method further comprises the following steps:
the sample pedestal is positioned at the end part of the second beam far away from the first beam and used for fixing the sample to be polished and adjusting the horizontal state of the sample to be polished along the second direction;
and the second adjusting structure is connected with the sample pedestal and used for driving the sample pedestal to move along the third direction and displaying the second height of the sample pedestal extending out of the second beam.
Preferably, the second beam comprises a third surface and a fourth surface opposite to the third surface;
said sample pedestal extending said second beam from said third surface in said third direction;
the second adjustment structure extends the second beam from the fourth surface.
Preferably, the second adjustment structure includes:
a second knob;
and one end of the second screw rod is connected with the sample pedestal, the other end of the second screw rod is connected with the second knob, and the second knob is used for driving the second screw rod to move in a telescopic manner along the axial direction of the second screw rod so as to adjust the second height of the sample pedestal extending out of the third surface.
Preferably, the second adjusting structure further comprises:
the second sleeve is located on the third surface, part of the second screw rod is sleeved in the second sleeve, the second knob is located at the end, far away from the third surface, of the second sleeve, and second scales are arranged on the surface of the second sleeve and used for displaying the length, extending out of the second sleeve, of the second screw rod along the axial direction of the second screw rod.
Preferably, the method further comprises the following steps:
and the level gauge is positioned on the fourth surface and used for displaying the horizontal state of the fourth surface along the second direction.
According to the grinding and polishing device provided by the invention, through the arrangement of the first adjusting structure, on one hand, the first height of the base extending out of the first beam can be adjusted in real time, and the flatness of the polished surface of a sample to be ground and polished in the first direction is ensured; on the other hand, the first height of the base extending out of the first beam is displayed through the first adjusting structure, so that a user can visually and accurately know the current height of the base and can quantitatively adjust the height of the base, the control precision of the polishing height of a sample to be polished is improved, the polishing quality is improved, and the flatness and the analyzability of a semiconductor product are improved.
Drawings
FIG. 1 is a schematic top view of a polishing apparatus according to an embodiment of the present invention;
FIG. 2 is a schematic cross-sectional view of a polishing apparatus according to an embodiment of the present invention;
FIG. 3 is another schematic cross-sectional view of the polishing apparatus in accordance with an embodiment of the present invention;
FIG. 4 is a schematic diagram of a first adjustment mechanism in accordance with an embodiment of the present invention;
FIG. 5 is a schematic diagram of a second adjustment mechanism in accordance with an embodiment of the present invention.
Detailed Description
The following describes in detail a specific embodiment of the polishing apparatus according to the present invention with reference to the drawings.
In the process of grinding a sample by adopting the grinding and polishing device with the T-shaped die holder, after the sample is fixed on a sample pedestal of the grinding and polishing device through hot melt adhesive or other peelable adhesive, the sample pedestal is inserted into a clamping groove of the T-shaped die holder, and the two bases at the bottom of the T-shaped die holder and three supporting points of the sample form a plane together to manually grind and polish the sample or automatically grind and polish the sample by using a grinding and polishing machine, so that the sample with a flat surface is prepared, and the surface of the ground and polished sample is subjected to other treatments such as physicochemical property analysis and the like.
However, the current polishing device can only roughly perform rough adjustment on the horizontal state of the sample, the precision is poor, and in the daily sample preparation process, only rough adjustment can be performed by the experience of an individual, and quantification cannot be performed, so that the sample preparation effect depends heavily on the experience and the sample preparation level of the individual. With the continuous development of semiconductor process, the size of CMOS devices is further reduced, the resolution of atomic force microscopes, scanning electron microscopes and other devices is higher and higher, and the requirements for sample preparation are also increased. Therefore, if the adjustment precision of the horizontal state of the sample is poor or rough during the sample preparation process, the surface to be polished of the final sample cannot stay on the same plane, and even delamination occurs, so that the required device surface cannot be completely prepared. More seriously, the delamination of the device structure will destroy the circuit inside the device, so that the subsequent electrical test cannot be performed, and finally the sample is discarded.
In addition, in the process of grinding and polishing the sample, the external level meter is needed to judge the horizontal state of the front and back of the grinding and polishing device, and the grinding and polishing device is adjusted according to the judgment result to ensure the smooth sample preparation process. However, in the determination process, the whole T-shaped die holder with the sample fixed thereon needs to be moved to a flat table, and then the external level meter is placed on the surface of the T-shaped die holder, so that the front and back horizontal states of the T-shaped die holder are determined, and the T-shaped die holder is adjusted according to the determination result, so that the adjusted T-shaped die holder is horizontal. This adjustment process needs to be repeated many times, but both moving the T-die holder and placing the external level can cause the sample surface to become rough due to friction with the table top, or even risk damaging the sample.
In order to improve the adjustment precision of the horizontal state of a sample in the grinding and polishing process and improve the sample preparation quality, the embodiment provides a grinding and polishing device, and fig. 1 is a schematic view of a top-view structure of the grinding and polishing device in the embodiment of the invention, fig. 2 is a schematic view of a section of the grinding and polishing device in the embodiment of the invention, and fig. 3 is another schematic view of the section of the grinding and polishing device in the embodiment of the invention. The sample to be polished in this embodiment may be any semiconductor sample that needs to be polished, such as but not limited to a 3D NAND memory structure. As shown in fig. 1, 2 and 3, the polishing device provided in this embodiment includes:
the die holder comprises a T-shaped die holder and a T-shaped die holder, wherein the T-shaped die holder comprises a first beam 10 extending along a first direction and a second beam 11 connected with the first beam 10 and extending along a second direction, and the first direction is perpendicular to the second direction;
a base 20, located on the first beam 10, for adjusting the horizontal state of the sample 16 to be polished along the first direction;
and the first adjusting structure is connected with the base 20 and used for driving the base 20 to move along a third direction and displaying a first height of the base 20 extending out of the first beam 10, wherein the third direction is perpendicular to the first direction and the second direction.
The horizontal state of the sample 16 to be polished along the first direction means a height gradient of the sample 16 to be polished along two opposite sides of the first direction. For example, the first direction is an X-axis direction, the second direction is a Y-axis direction, and the third direction is a Z-axis direction. The first beam 10 is vertically connected with the second beam 11 to form a T-shaped structure, that is, the end of the second beam 11 is connected with the middle of the first beam 10, and the second beam 11 can rotate around the connection point with the first beam 10 in the YZ plane (that is, the end of the second beam 11 far from the first beam 10 can move up and down in the Z-axis direction). The first beam 10 is used for adjusting the horizontal state of the sample 16 to be polished along the X-axis direction, that is, adjusting the height gradients of the two opposite sides of the sample 16 to be polished along the X-axis direction, so that the heights of the two opposite sides of the sample 16 to be polished along the X-axis direction are the same after the sample is polished. The first height at which the base 20 extends out of the first beam 10 means that the base 20 extends out of the first beam 10 in the Z-axis direction.
In this embodiment, the first height of the base 20 extending out of the first beam 10 is adjusted by the first adjusting structure, so that the horizontal state of the sample 16 to be polished along the X-axis direction (i.e., the left-right direction) can be adjusted, and in the adjusting process, a specific value of the first height can be visually displayed, so that a user can quantitatively adjust the first height of the base 20 extending out of the first beam 10; on the other hand, the display of specific numerical values can help to improve the adjustment precision and reduce the dependence on individual subjective experience.
In this embodiment, the adjustment precision of the base 20 by the first adjustment structure may be selected by a person skilled in the art according to actual needs, for example, the adjustment precision of the base 20 by the first adjustment structure is 0.01 mm. The specific way of displaying the first height in the first adjusting structure can be directly displayed in a display screen mode or a graduated scale mode, and a person skilled in the art can select the first height according to actual needs.
Preferably, the first beam 10 comprises a first surface facing the grinding table and a second surface opposite to the first surface;
the base 20 is located on the first surface and can extend out of the first surface along the third direction;
the first adjustment structure extends the first beam 10 from the second surface.
Preferably, the second beam 11 is connected with the middle part of the first beam 10;
the number of the bases 20 is two, and the two bases 20 are symmetrically distributed about the second beam 11;
the number of the first adjusting structures is two, and the two first adjusting structures are correspondingly connected with the two bases 20 one by one.
Specifically, the first beams 10 are symmetrically distributed on opposite sides of the second beam 11 in the X-axis direction. The first beam 10 and the second beam 20 may be fixedly connected or detachably connected, which is not limited in this embodiment. The polishing device comprises two bases 20, and the two bases 20 are symmetrically distributed on two opposite sides of the second beam 11 along the X-axis direction.
As shown in fig. 2, in the process of polishing the sample 16 to be polished, two of the bases 20 and the sample 16 to be polished are respectively used as a pivot, and three pivots are jointly in contact with the flat surface of the polishing table, so that a plane is formed by the three pivots, and the sample 16 to be polished is polished. A, B in fig. 2 respectively indicate the positions of the bottom surfaces of the two bases 20 (i.e., the surfaces of the bases 20 facing away from the first beam 10) in the X-axis direction, and C, D respectively indicate the positions of the opposite sides of the sample 16 to be polished in the X-axis direction. At the initial time of grinding, A, B and C are on the same plane or A, B and D are on the same plane by adjusting two first adjusting structures. During the grinding process, as the sample 16 to be polished is worn, the first height extending from the first surface along the Z-axis direction of the base 20 needs to be adjusted by the first adjusting structure for multiple times, for example, the first height is continuously reduced until the A, B connecting line is parallel to the C, D connecting line, and it is determined that the two opposite sides of the sample 16 to be polished along the X-axis direction are polished flat, that is, the heights of the two opposite sides of the sample 16 to be polished along the X-axis direction are ground to be the same.
In this embodiment, according to the distance W2 between A, B and the width W1 of the sample to be polished 16 along the X-axis direction, the accuracy error e1 of the sample to be polished 16 along the X-axis direction during the sample polishing process can be controlled, that is, e1 ═ γ × W1/W2, where γ represents the accuracy of the first adjustment structure to the first height measurement.
For example, the sample to be polished is a 3D NAND sample, W2 ═ 6cm, W1 ═ 6mm, and when γ is 0.001mm, e1 ═ 0.001mm ═ 6mm/60mm ═ 0.1 μm ═ 100 nm; when W2 is 6cm, W1 is 6mm, and gamma is 0.01mm, e1 is 0.01mm 6mm/60mm 1 μm, which satisfies the requirement of sample preparation.
FIG. 4 is a schematic diagram of a first adjustment configuration in accordance with an embodiment of the present invention. Preferably, as shown in fig. 1 to 4, the first adjusting structure includes:
a first knob 121;
one end of the first screw 41 is connected to the base 20, and the other end of the first screw is connected to the first knob 121, and the first knob 121 is used for driving the first screw 41 to move telescopically along the axial direction thereof, so as to adjust the first height of the base 20 extending out of the first surface.
Preferably, the first adjusting structure further comprises:
the first sleeve 122 is located on the second surface, a part of the first screw 41 is sleeved in the first sleeve 122, the first knob 121 is located at an end of the first sleeve 122 far away from the second surface, and a first scale is arranged on the surface of the first sleeve 122 and used for displaying the length of the first screw 41 extending out of the first sleeve 122 along the axial direction of the first screw.
For example, by rotating the first knob 121 clockwise, the first screw 41 is driven to move along the negative Z-axis direction, the length of the extending first sleeve 122 increases, and the movement of the first screw 41 drives the base 20 connected thereto to move, so that the first height of the base 20 extending out of the first beam 10 increases. Conversely, by rotating the first knob 121 counterclockwise, the first screw 41 is driven to move along the positive Z-axis direction, the length of the first sleeve 122 extending out is reduced, and the movement of the first screw 41 drives the base 20 connected thereto to move, so that the first height of the base 20 extending out of the first beam 10 is reduced.
The first adjustment structure further comprises a first stop structure 42 at the end of the first sleeve 122 for locking the position of the first screw 41 after the adjustment is completed, to avoid a change in the first height during grinding of the test piece 16 to be polished.
To further improve the adjustment accuracy of the first adjustment mechanism, the first knob 121 may include a first coarse adjustment knob 45 and a first fine adjustment knob 46, the first sleeve 122 may include a first fixed sleeve 43 and a first movable sleeve 44, the first movable sleeve 44 may be positioned between the first fixed sleeve 43 and the first coarse adjustment knob 45, and the first coarse adjustment knob 45 may be positioned between the first movable sleeve 44 and the first fine adjustment knob 46. The first coarse adjustment knob 45 is used for performing a coarse adjustment on the movement of the first screw rod 41, and the first fine adjustment knob 46 is used for performing a fine adjustment on the movement of the first screw rod 41, that is, the adjustment precision of the first fine adjustment knob 46 is higher than that of the first coarse adjustment knob 45.
In a specific adjustment process, the first height at which the base 20 extends out of the first beam 10 can be adjusted using a principle similar to that of a micrometer screw. For example, the first fixed sleeve 43 has threads inside, the first screw 41 is driven by the first coarse adjustment knob 45 or the first fine adjustment knob 46 to rotate in the first fixed sleeve 43 for one circle, the first screw 41 moves by a distance of one thread pitch along the Z-axis direction, the sum of the fixed scale on the first fixed sleeve 43 and the movable scale on the first movable sleeve 44 is the distance moved by the first screw 41, and thereby the first height of the base 20 extending out of the first beam 10 is determined.
Preferably, the polishing device further comprises:
a sample pedestal 15, located at an end of the second beam 11 far from the first beam 10, for fixing the sample 16 to be polished and adjusting a horizontal state of the sample 16 to be polished along the second direction;
second adjustment structure, connected to the sample stage 15, for driving the sample stage 15 to move in the third direction and indicating a second height at which the sample stage 15 extends out of the second beam 11.
Preferably, the second beam 11 comprises a third surface and a fourth surface opposite to the third surface;
in said third direction, said sample stage 15 extends from said third surface with said second beam;
the second adjustment structure extends from the fourth surface to the second beam 11.
The horizontal state of the sample 16 to be polished along the second direction means a height gradient of the sample 16 to be polished along two opposite sides of the second direction. Specifically, the second beam 11 has a card slot 13 therein, and after the sample to be polished 16 is fixed to the sample block 15 by hot melt adhesive or the like, the sample block 15 is inserted into the card slot 13 so that the sample block 15 is attached to the end of the second beam 11. In order to avoid the sample holder 15 from shaking during the grinding of the sample 16 to be polished, a fastening knob 14 is further provided in the slot 13 for limiting the position of the sample holder 15 in the slot 13. The adjustment precision of the second adjustment structure may be the same as that of the first adjustment structure, or may be different from that of the first adjustment structure, and a person skilled in the art may select the adjustment precision according to actual needs.
In fig. 3, G indicates the position of the bottom surface of the base 20 (i.e., the surface of the base 20 facing away from the first beam 10) in the Y-axis direction, and E, F indicates the positions of the opposite sides of the sample to be polished 16 in the Y-axis direction, respectively. And at the initial grinding moment, adjusting two first adjusting structures and two second adjusting structures to enable G and E to be on the same straight line or enable G and F to be on the same straight line. During the grinding process, as the sample 16 to be ground and polished is worn, the first height of the base 20 extending out of the first surface along the Z-axis direction and the second height of the sample pedestal 15 extending out of the third surface need to be adjusted by the first adjusting structure for multiple times, for example, the first height and the second height are continuously reduced until the three points G, E and F are on the same straight line, and it is confirmed that the two opposite sides of the sample 16 to be ground and polished along the Y-axis direction are ground and leveled, i.e., the front and back of the sample 16 to be ground and polished are leveled (the heights of the two opposite sides of the sample 16 to be ground and polished along the Y-axis direction are ground to be the same).
In this embodiment, according to the distance D2 between G, F and the thickness D1 of the sample to be polished 16 along the Y-axis direction (i.e., the distance between E, F), the precision error e2 of the sample to be polished 16 along the Y-axis direction during the sample polishing process can be controlled, i.e., e2 ═ β × D1/D2, where β represents the precision of the second adjustment structure on the second height measurement.
For example, the sample to be polished is a 3D NAND sample, D2 ═ 6cm, D1 ═ 6 μm, and when β is 0.001mm, e2 ═ 0.001mm ═ 0.006mm/60mm ═ 0.1 nm; when D2 is 6cm, D1 is 6 μm, and β is 0.01mm, e2 is 0.01mm 0.006mm/60mm 1nm, which satisfies the requirement of sample preparation.
FIG. 5 is a schematic diagram of a second adjustment mechanism in accordance with an embodiment of the present invention. Preferably, as shown in fig. 1-3 and 5, the second adjusting structure includes:
a second knob 171;
a second screw 51 having one end connected to the sample holder 15 and the other end connected to the second knob 171, wherein the second knob 171 is used for driving the second screw 51 to move telescopically along the axial direction thereof, so as to adjust the second height of the sample holder 15 extending out of the third surface.
Preferably, the second adjusting structure further comprises:
the second sleeve 172 is located on the third surface, a part of the second screw 51 is sleeved in the second sleeve 172, the second knob 171 is located on an end portion of the second sleeve 172 far away from the third surface, and a second scale is arranged on the surface of the second sleeve 172, and is used for displaying a length of the second screw 51 extending out of the second sleeve 172 along an axial direction thereof.
The second adjustment structure further comprises a second stop structure 52 at the end of the second sleeve 172 for locking the position of the second screw 51 after the adjustment is completed, to prevent the second height from changing during grinding of the test piece 16 to be polished.
To further improve the adjustment accuracy of the second adjustment mechanism, the second knob 171 may include a second coarse adjustment knob 55 and a second fine adjustment knob 56, the second sleeve 172 may include a second fixed sleeve 53 and a second movable sleeve 54, the second movable sleeve 54 is located between the second fixed sleeve 53 and the second coarse adjustment knob 55, and the second coarse adjustment knob 55 is located between the second movable sleeve 54 and the second fine adjustment knob 56. The second coarse adjustment knob 55 is used for performing coarse adjustment on the movement of the second screw 51, and the second fine adjustment knob 56 is used for performing fine adjustment on the movement of the second screw 51, that is, the adjustment precision of the second fine adjustment knob 56 is higher than that of the second coarse adjustment knob 55.
In a specific adjustment process, the second height at which the sample stage 15 extends beyond the second beam 11 can be adjusted using a principle similar to that of a micrometer screw. For example, the second fixed sleeve 53 has a screw thread inside, the second screw 51 is driven by the second coarse adjustment knob 55 or the second fine adjustment knob 56 to rotate a circle in the second fixed sleeve 53, the second screw 51 moves by a distance of one screw pitch along the Z-axis direction, the sum of the fixed scale on the second fixed sleeve 53 and the movable scale on the second movable sleeve 54 is the distance of the movement of the second screw 51, and thus the second height of the sample stage 15 extending out of the second beam 11 is determined.
Preferably, the polishing device further comprises:
and the level gauge 18 is positioned on the fourth surface and used for displaying the horizontal state of the fourth surface along the second direction.
Specifically, in the sample preparation process, as the grinding is performed continuously, the sample 16 to be polished is worn continuously, and the height of the sample 16 to be polished extending out of the sample pedestal 15 along the Z-axis direction in fig. 3 is changed continuously, so that in order to ensure the smooth performance of the grinding process, the second height needs to be adjusted by using the second adjusting structure, so that the G, F connection line L1 is located on the horizontal grinding table, that is, the final effect is that the G, F connection line L1 is parallel to the connection line L2 at the two opposite ends of the second beam 11 along the Y-axis direction.
In the present embodiment, the level gauge 18 is embedded in the fourth surface of the second beam 11, so that the level state of the fourth surface can be detected in real time according to the level gauge. The level gauge 18 may be a graduated bubble level gauge, which monitors the level change of the line L2 in real time and adjusts the second adjustment structure according to the monitoring result to reduce the friction damage of the sample 16 to be polished by frequently moving the polishing device. For example, when the end of the second beam 11 is tilted in the negative Z-axis direction, the bubble level monitors that the horizontal state of the fourth surface is shifted, and according to the monitoring result, the user may increase the second height so that the fourth surface returns to the horizontal state.
According to the grinding and polishing device provided by the specific embodiment, by arranging the first adjusting structure, on one hand, the first height of the base extending out of the first beam can be adjusted in real time, and the flatness of the polished surface of the sample to be ground and polished in the first direction is ensured; on the other hand, the first height of the base extending out of the first beam is displayed through the first adjusting structure, so that a user can visually and accurately know the current height of the base and can quantitatively adjust the height of the base, the control precision of the polishing height of a sample to be polished is improved, the polishing quality is improved, and the performance of a semiconductor product is improved.
The foregoing is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, various modifications and decorations can be made without departing from the principle of the present invention, and these modifications and decorations should also be regarded as the protection scope of the present invention.

Claims (10)

1. A polishing device, comprising:
the T-shaped die holder comprises a first beam extending along a first direction and a second beam connected with the first beam and extending along a second direction, and the first direction is perpendicular to the second direction;
the base is positioned on the first beam and used for adjusting the horizontal state of the sample to be polished along the first direction, wherein the horizontal state of the sample to be polished along the first direction refers to the height gradient of the sample to be polished along two opposite sides of the first direction, and the base and the sample to be polished can be used as a fulcrum during polishing;
the first adjusting structure is connected with the base and used for driving the base to move along a third direction so as to adjust the horizontal state of the sample to be polished along the first direction, displaying the first height of the base extending out of the first beam and quantitatively adjusting the first height of the base extending out of the first beam, wherein the third direction is perpendicular to the first direction and the second direction.
2. The polishing apparatus of claim 1, wherein the first beam includes a first surface facing the polishing table and a second surface opposite the first surface;
the base is positioned on the first surface and can extend out of the first surface along the third direction;
the first adjustment structure extends the first beam from the second surface.
3. The polishing apparatus of claim 2, wherein the first adjustment structure comprises:
a first knob;
one end of the first screw is connected with the base, the other end of the first screw is connected with the first knob, and the first knob is used for driving the first screw to move in a telescopic mode along the axial direction of the first screw so as to adjust the first height of the base extending out of the first surface.
4. The polishing apparatus of claim 3, wherein the first conditioning arrangement further comprises:
the first sleeve is located on the second surface, part of the first screw rod is sleeved in the first sleeve, the first knob is located at the end portion, far away from the second surface, of the first sleeve, and first scales are arranged on the surface of the first sleeve and used for displaying the length of the first screw rod extending out of the first sleeve along the axial direction of the first screw rod.
5. The polishing apparatus as set forth in claim 1 wherein the second beam is connected to a middle portion of the first beam;
the number of the bases is two, and the two bases are symmetrically distributed around the second beam;
the number of the first adjusting structures is two, and the two first adjusting structures are connected with the two bases in a one-to-one correspondence mode.
6. The polishing and grinding apparatus of claim 5, further comprising:
the sample pedestal is positioned at the end part of the second beam far away from the first beam and used for fixing the sample to be polished and adjusting the horizontal state of the sample to be polished along the second direction;
and the second adjusting structure is connected with the sample pedestal and used for driving the sample pedestal to move along the third direction and displaying the second height of the sample pedestal extending out of the second beam.
7. The polishing apparatus of claim 6, wherein the second beam comprises a third surface and a fourth surface opposite the third surface;
said sample pedestal extending said second beam from said third surface in said third direction;
the second adjustment structure extends the second beam from the fourth surface.
8. The polishing apparatus of claim 7, wherein the second adjustment structure comprises:
a second knob;
and one end of the second screw rod is connected with the sample pedestal, the other end of the second screw rod is connected with the second knob, and the second knob is used for driving the second screw rod to move in a telescopic manner along the axial direction of the second screw rod so as to adjust the second height of the sample pedestal extending out of the third surface.
9. The polishing apparatus of claim 8, wherein the second conditioning structure further comprises:
the second sleeve is located on the third surface, part of the second screw rod is sleeved in the second sleeve, the second knob is located at the end, far away from the third surface, of the second sleeve, and second scales are arranged on the surface of the second sleeve and used for displaying the length, extending out of the second sleeve, of the second screw rod along the axial direction of the second screw rod.
10. The polishing apparatus as set forth in claim 7, further comprising:
and the level gauge is positioned on the fourth surface and used for displaying the horizontal state of the fourth surface along the second direction.
CN201910847141.XA 2019-09-09 2019-09-09 Grinding and polishing device Active CN110549203B (en)

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