CN110536562B - 功率构件和其制造方法 - Google Patents
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Abstract
本发明涉及一种功率构件(100),其具有承载板(1)和至少一个半导体元件(2),其中,至少一个半导体元件(2)固定在承载板(1)上,并且承载板(1)和固定在其上的至少一个半导体元件(2)嵌入到灌封材料(3)中,其中,承载板(1)和固定在其上的至少一个半导体元件(2)至少部分被灌封材料(3)的第一材料成分件(4)覆盖,并且承载板(1)的没有被第一材料成分件(4)覆盖的部分被灌封材料(3)的第二材料成分件(6)覆盖,其中,第一材料成分件(4)与第二材料成分件(6)不同。此外,本发明还涉及一种用于制造根据本发明的功率构件(100)的方法。
Description
技术领域
本发明涉及一种功率构件,其具有承载板和至少一个固定在其上的半导体元件。此外,本发明还涉及一种用于制造功率构件的方法。
背景技术
在现有技术中,用于实现具有半导体模块的功率电子器件系统的不同的设计和用于制造功率电子器件系统的方法是已知的。该类型的功率电子器件系统具有构件、如半导体模块、电容器、电流测量设备和EMV滤波器,其中,这些构件直接或通过附加的导电轨相互连接。在经典的结构中,半导体元件钎焊到第一铜线路上,线路固定在陶瓷基底上,陶瓷基底固定在第二铜线路上,并且第二铜线路钎焊到承载板上。为了连接构件,通常使用螺钉和/或焊接连接。在焊接连接中需要相应的连接部分,其需要结构空间并且与另外的系统部件相比具有相对高的重量。钎焊连接仅具有相对小的连接稳定性,并且因此仅是有限地适当的。此外,在现有技术中已知的用于定位不同的系统部件的连接和/或固定形式是相对昂贵的,并且此外与成本耗费相比经常不具有期望热传递功能,例如功率构件必需的散热。
由国际专利申请WO 2007/045112 A1已知一种针对半导体芯片和其用于散热的装置的功率壳体。根据该文献建议的是,功率壳体至少由两个导电连接的高导热性能的基底、芯片承载基底和壳体承载基底构成,其中,安装有半导体芯片的芯片承载基底通过布线载体的开口实现与冷却介质的直接的热连接,并且壳体承载基底实现与布线载体的电连接。然而,该解决方案在期望的针对该类型的功率构件的连接和/或固定设计方面还是令人不满意的。
发明内容
本发明所要解决的技术问题在于至少部分考虑到之前描述的问题。本发明所要解决的技术问题尤其是在于提供一种功率构件和一种用于制造功率构件的方法,其具有针对功率构件的系统部件的更好的连接和/或固定方案。
前述的技术问题通过权利要求解决。前述的技术问题尤其是通过根据权利要求1的功率构件和根据权利要求9的用于制造功率构件的方法解决。由从属权利要求、说明书和附图得到本发明的另外的优点。在此,结合功率构件描述的特征显然也适用于结合根据本发明的用于制造功率构件的方法,反之亦然,从而关于各个发明方面的公开内容总是相互参考或能够相互参考。
根据本发明的第一方面提供具有承载板和至少一个半导体元件的功率构件。至少一个半导体元件固定在承载板上,其中,承载板和固定在其上的至少一个半导体元件被嵌入灌封材料中。承载板和固定在其上的至少一个半导体元件至少部分被灌封材料的第一材料成分件(或称为第一材料成分)覆盖,并且承载板的没有被第一材料成分件覆盖的部分被灌封材料的第二材料成分件(或称为第二材料成分)覆盖,其中,第一材料成分件(或称为第一材料成分)和第二材料成分件(或称为第二材料成分)不同。
在本发明的范围内意识到,通过有针对性地使用灌封材料的不同的灌封材质或材料成分件可以实现一种连接和/或固定方案,通过该连接和/或固定方案,与常规的系统相比可以以有效的和廉价的方式提高该类型的功率构件的系统质量。因此,在功率构件的在功能技术和/或安全技术上不太重要的部位上可以例如选择廉价的灌封材料或灌封材料的廉价的材料成分。相反地,在功率构件的在功能技术和/或安全技术上重要的部位上可以选择相应更高价值的灌封材料或灌封材料的高价值的材料成分。
通过将承载板和固定在其上的至少一个半导体元件嵌入到灌封材料中,可以至少部分放弃常规的固定器件、如螺钉连接或焊接部位。通过放弃螺钉连接等可以减小功率构件的重量。这尤其是在总是期望重量减小的移动应用中是有利的。
通过取消固定器件(其例如针对不同的螺钉连接是需要的),此外可以减小用于制造功率构件的物流耗费。不必制造、储存、预定、交付和/或装配螺钉、销、螺母、垫片等。当前仅要考虑关于浇注材料的物流。
在功率构件的尽可能安全的运行方式方面可以获得当前使用的浇注材料或其应用的另外的优点。通过承载板和固定在其上的至少一个半导体元件的嵌入,可以形成围绕功率构件的保护层。通过该保护层,功率构件的周围环境可以免受功率构件的影响,功率构件可以免受其周围环境的影响。因此,例如可以阻止从功率构件到功率构件的周围环境中的火花飞溅和进而爆炸危险。根据本发明的灌封材料因此可以实现关于至少一个半导体元件或功率构件的不同的构件的机械固定、构件保护和与周围构件、如冷却体的热连接的功能。
功率构件优选理解为功率电子器件构件、尤其是具有至少一个用于电力驱动器的集成功率电路的功率构件。功率构件优选设计为电动车的针对电力驱动器、尤其是针对驱动系和/或在驱动系中的功率构件。至少一个半导体构件优选具有至少一个半导体芯片(例如形式为DIE)。半导体芯片可以相应于半导体晶片的单独的未封装的晶粒或裸片。在至少一个半导体芯片上存在晶体管、发光二极管或复杂的结构组件、如集成电路,它们根据本发明同样嵌入到灌封材料中。
灌封材料可以理解为塑造材料(或注塑材料)、即尤其是塑料材料。灌封材料尤其是通过传递模塑法(转移成型)或压注的形式制造。第一材料成分件和第二材料成分件分别可以具有相同的基本材料、然而具有不同的填充材料。来自转移成型的灌封材料尤其是可以至少部分、优选完全代替在一种常规的功率构件中使用的硅酮灌封。
至少一个半导体构件固定在承载板上可以理解为:至少一个半导体构件直接或间接紧固或固定在承载板上、尤其是承载板的上侧。也就是说,至少一个半导体构件可以与承载板直接接触,或者通过连接或固定器件与承载板间接接触。
至少一个半导体元件和/或承载板至少部分、优选完全嵌入灌封材料中,或者被灌封材料包围。第一材料成分件优选覆盖承载板的完整的上侧或基本上覆盖完整的上侧,在承载板上也存在至少一个半导体元件。第二材料成分件优选覆盖承载板的完整的下侧或基本上覆盖完整的下侧。可以通过第一材料成分件和/或第二材料成分件覆盖承载板的窄的侧面。承载板可以理解为在该类型的功率构件中或在功率电子器件中使用的基底。承载板可以以闭合的或打开的结构的形式设计,该结构例如具有板形的具有多个通孔和/或盲孔的基本体。
根据本发明的灌封材料可以代替在常规的功率构件中常见的底板和用于将功率构件的不同的构件保持在预设的位置中的框架结构。
根据本发明的另外的实施方式可能的是,在功率构件中,第一材料成分件具有比第二材料成分件更高的机械强度。由此,在承载板的上侧的构件例如可以有针对性地受到保护,以防环境影响,而这在承载板的下侧是不需要的或至少是不太需要的。通过在承载板的下侧放弃相应高价值的材料成分可以减小针对制造功率构件的制造成本。
此外可能的是,在根据本发明的功率构件中,第二材料成分件具有比第一材料成分件更高的热传导性。由此,承载板的下侧例如可以在期望的热传导性方面有针对性地被处理,相反地,在上侧不必从事朝该方向的努力。通过在承载板的上侧放弃相应特殊的材料成分件可以减小针对制造功率构件的制造成本。
在根据本发明的功率构件中此外可能的是,第二材料成分件具有含氮化铝和/或氧化铝的环氧树脂。带有氮化铝和/或氧化铝的环氧树脂在本发明的范围内的大量的试验中证实自己合适作为在相对低的成本费用中的具有良好的电绝缘性的材料成分件,尤其是与迄今为止使用的硅酸盐填充物不同。
根据本发明的另外的设计变型方案证实为有利的是,至少一个半导体构件通过烧结连接固定在承载板上。也就是说,迄今为止常见的钎焊连接通过烧结连接代替。通过该措施可以减小至少一个半导体元件(例如形式为DIE)与优选由铜或基本上由铜构成的承载板之间的接触热阻。这相应对至少一个半导体元件与承载板之间的热传导产生正面影响,并且因此也对灌封材料中的构件的连接质量产生正面影响。烧结连接此外明显比常规的钎焊连接更耐用。由此,与具有钎焊连接的常规的功率构件相比,该功率构件的使用寿命可以明显得到改进。烧结连接理解为至少一个半导体元件与承载板之间的借助烧结材料的材料接合的连接。
此外,在根据本发明的功率构件中可能的是,在承载板上固定有至少一个电容器,其中,电容器也被灌封材料的第一材料成分件覆盖。因此,与常规的功率构件相比,通过将不同的构件嵌入根据本发明的灌封材料,可以减少连接部位。承载板可以理解为连续的连接结构,其从电容器延伸到至少一个功率构件。在现有技术中,不同的三明治式的构造迄今为止尤其是已知的。因此当前需要更少的连接材料、例如更少的螺钉等。在承载板上的不同的构件可以通过灌封材料包围。电容器至少部分、优选完全通过灌封材料包围或覆盖。电容器尤其是以中间电路电容器的形式设计。承载板优选与功率构件的冷却体直接接触。因此,承载板可以在不考虑连接材料、如烧结材料和/或灌封材料的情况下三明治式地布置在电容器与冷却体之间。电容器通过承载板与冷却体的直接连接产生如下优点,即相应可以有效地冷却电容器。还可以通过灌封材料的相应选择的材料成分改进该效应。
此外,在根据本发明的功率构件中可能的是,在承载板上固定至少一个电容器,其中,电容器通过焊接连接固定在承载板上。焊接连接理解为利用焊接材料、即尤其是具有相应高的导热性的金属材料的材料接合的连接。由此,热量可以从电容器通过焊接连接、承载板和浇注材料的根据本发明适当选择的材料成分件特别有效地朝冷却体的方向导出,冷却体与承载板上的电容器对置。
此外,在根据本发明的功率构件中可能的是,承载板以铜冲压格栅的形式设计。铜冲压格栅理解为具有格栅结构的由铜或至少基本上由铜构成的承载板。因此,承载板尤其是与在现有技术中已知的陶瓷基底或具有陶瓷份额的承载板、如DCB基底不同。铜冲压格栅可以利用比DCB基底的铜区段更高的铜横截面或更高的铜厚度实现。由此可以增大或相应大地提供热质量件,其直接或仅通过材料接合的连接或相应的连接材料分离地定位在至少一个半导体元件上。这导致朝灌封材料的方向的有利的热传导,其现在可以相应简单地适应于当前的情况或被选择。
根据本发明的另一方面提供了用于制造之前描述的功率构件的方法。该方法具有如下步骤:
-提供承载板,
-半导体元件固定在承载板上,和
-承载板和固定在其上的半导体元件嵌入到灌封材料中,其中,承载板和固定在其上的至少一个半导体元件至少部分被灌封材料的第一材料成分件覆盖,并且承载板的不被第一材料成分件覆盖的部分被灌封材料的第二材料成分件覆盖,其中,第一材料成分件与第二材料成分件不同。
因此,根据本发明的方法具有如详细参照根据本发明的功率构件描述的相同的优点。在该方法的范围内可能的是,至少一个半导体构件通过烧结过程固定在承载板上。由烧结过程产生的烧结连接以之前已经阐述的方式证实为是特别有利的。
附图说明
由随后针对本发明的在附图中示意性示出的不同的实施例的描述得到另外的改进本发明的措施。所有由权利要求、说明书或附图产生的特征和/或优点、包括设计细节和空间布置可以单独地、也可以以组合形式是对于本发明来说重要的。
在此分别示意性地:
图1示出按照根据本发明的实施方式的功率构件;和
图2至4示出用于制造图1所示的功率构件的方法。
具体实施方式
图1示出了一种功率构件100,其具有承载板1和形式为DIE(封装前晶粒或裸片)的半导体元件2。半导体元件2固定在承载板1的上侧。
此外,图1所示的承载板1和固定在其上的半导体元件2被嵌入到灌封材料3中。更准确的说,承载板1的上侧和固定在其上的至少一个半导体元件2至少部分被灌封材料3的第一材料成分件4覆盖,并且承载板1的下侧被灌封材料3的第二材料成分件6覆盖,其中,第一材料成分件4与第二材料成分件6不同。
半导体构件2通过烧结连接5固定在承载板1上。除了半导体构件以外,在承载板1上还固定有电容器7,其中,电容器7也被灌封材料3的第一材料成分件4覆盖。电容器7设计为中间电路电容器的形式,并且通过焊接连接8固定在承载板1的上侧,即固定在承载板1和半导体元件2相同的侧面上。承载板1以铜冲压格栅的形式设计。
在所示的示例中,为了保护承载板1上的构件,第一材料成分件4具有比第二材料成分件6更高的机械强度。为了期望的热交换效应,第二材料成分件6具有比第一材料成分件4更高的热传导性。更准确的说,第二材料成分件6具有含氮化铝的环氧树脂。
随后参考图2至4阐述用于制造如在图1中示出的功率构件100的方法。为此,在第一步骤中,如在图2中示出的那样,首先提供形式为铜冲压格栅的承载板1。
随后,如在图3中示出的那样,半导体元件2和电容器7固定在承载板1上。更准确的说,半导体元件2借助烧结连接5,并且电容器7借助焊接连接8固定在承载板1上。
随后,承载板1的上侧、包括固定在其上的半导体元件2和电容器7被灌封材料3的第一材料成分件4覆盖,如在图3中示出的那样。最后,承载板1的下侧被灌封材料的第二材料成分件6覆盖,如在图4中示出的那样,其中,第一材料成分件4与第二材料成分件6不同。更准确的说,第一材料成分件4具有比第二材料成分件6更高的机械强度,并且第二材料成分件6具有比第一材料成分件4更高的热传导性。
除了所示的实施方式以外,本发明允许另外的设计准则。也就是说,本发明应该不被视为局限于参考附图阐述的实施例。因此,除了承载板1上的所示的部件以外,显然还有更多的部件、尤其是更多的半导体元件可以固定在承载板1上,并且在那里嵌入灌封材料3中。
附图标记清单
1承载板
2半导体元件
3灌封材料
4第一材料成分件
5烧结连接
6第二材料成分件
7电容器
8焊接连接
100功率构件
Claims (9)
1.一种功率构件(100),具有承载板(1)和至少一个半导体元件(2),其中,至少一个半导体元件(2)固定在承载板(1)上,并且承载板(1)和固定在其上的至少一个半导体元件(2)嵌入灌封材料(3)中,其中,承载板(1)和固定在其上的至少一个半导体元件(2)至少部分被灌封材料(3)的第一材料成分件(4)覆盖,并且承载板(1)的没有被第一材料成分件(4)覆盖的部分被灌封材料(3)的第二材料成分件(6)覆盖,其中,第一材料成分件(4)与第二材料成分件(6)不同,第一材料成分件(4)具有比第二材料成分件(6)更高的机械强度。
2.根据权利要求1所述的功率构件(100),其特征在于,第二材料成分件(6)具有比第一材料成分件(4)更高的热传导性。
3.根据权利要求1所述的功率构件(100),其特征在于,第二材料成分件(6)具有带有氮化铝和/或氧化铝的环氧树脂。
4.根据权利要求1所述的功率构件(100),其特征在于,至少一个半导体元件 (2)通过烧结连接(5)固定在承载板(1)上。
5.根据权利要求1所述的功率构件(100),其特征在于,在承载板(1)上固定有至少一个电容器(7),其中,电容器(7)也被灌封材料(3)的第一材料成分件(4)覆盖。
6.根据权利要求1所述的功率构件(100),其特征在于,在承载板(1)上固定有至少一个电容器(7),其中,电容器(7)通过焊接连接(8)固定在承载板(1)上。
7.根据权利要求1所述的功率构件(100),其特征在于,承载板(1)构造为铜冲压格栅的形式。
8.一种用于制造根据前述权利要求中任一项所述的功率构件(100)的方法,具有如下步骤:
-提供承载板(1),
-半导体元件(2)固定在承载板(1)上,和
-承载板(1)和固定在其上的半导体元件(2)嵌入灌封材料(3)中,其中,承载板(1)和固定在其上的至少一个半导体元件(2)至少部分被灌封材料(3)的第一材料成分件(4)覆盖,并且承载板(1)的不被第一材料成分件(4)覆盖的部分被灌封材料的第二材料成分件(6)覆盖,其中,第一材料成分件(4)与第二材料成分件(6)不同。
9.根据权利要求8所述的方法,其特征在于,至少一个半导体元件 (2)通过烧结过程固定在承载板(1)上。
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