CN110534436B - Silicon-based self-adaptive spraying type micro-fluid heat dissipation substrate and preparation method thereof - Google Patents
Silicon-based self-adaptive spraying type micro-fluid heat dissipation substrate and preparation method thereof Download PDFInfo
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- B81—MICROSTRUCTURAL TECHNOLOGY
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- B81B1/00—Devices without movable or flexible elements, e.g. microcapillary devices
- B81B1/002—Holes characterised by their shape, in either longitudinal or sectional plane
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- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/04—Networks or arrays of similar microstructural devices
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00023—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems without movable or flexible elements
- B81C1/00055—Grooves
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- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00023—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems without movable or flexible elements
- B81C1/00087—Holes
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00261—Processes for packaging MEMS devices
- B81C1/00309—Processes for packaging MEMS devices suitable for fluid transfer from the MEMS out of the package or vice versa, e.g. transfer of liquid, gas, sound
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
- B81C1/00523—Etching material
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- H—ELECTRICITY
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4871—Bases, plates or heatsinks
- H01L21/4882—Assembly of heatsink parts
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/46—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids
- H01L23/473—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids by flowing liquids
- H01L23/4735—Jet impingement
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/05—Microfluidics
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2203/00—Basic microelectromechanical structures
- B81B2203/03—Static structures
- B81B2203/0353—Holes
Abstract
The invention relates to a silicon-based self-adaptive gushing type micro-fluid heat dissipation substrate and a preparation method thereof, wherein the heat dissipation substrate is formed by stacking three layers of structures, and is sequentially provided with a supporting layer, a bottom micro-fluid structure layer and a top micro-fluid structure layer from bottom to top; a liquid inlet and a supporting layer liquid outlet are formed in the supporting layer; the bottom microfluid structure layer is provided with a bottom microfluid channel, a bottom gushing port and a bottom liquid outlet; the top microfluid structure layer is provided with a top microfluid channel and a top gushing port; the bottom microfluidic channel and the top microfluidic channel are respectively positioned on the lower surface of the bottom microfluidic structure layer or the top microfluidic structure layer; the position of the liquid inlet corresponds to the end part of the bottom-layer microfluidic channel, and the positions of the supporting layer liquid outlet and the bottom-layer liquid outlet correspond to the end part of the top-layer microfluidic channel. The invention solves the integration problem of the microfluid heat dissipation module in the system aiming at the integration requirement of the microsystem, and effectively improves the heat dissipation efficiency aiming at local hot spots.
Description
Technical Field
The invention belongs to the technical field of micro-electronics and micro-systems, and particularly relates to a silicon-based self-adaptive gushing type micro-fluid heat dissipation substrate and a preparation method thereof.
Background
With the development of microelectronic and microsystem integration technologies, the integration density of chips and modules is higher and higher, and microsystem integration is developing towards small volume, high density, high performance, multi-functionalization and three-dimensional stacking, so microsystems put higher demands on thermal management. The quality of the thermal management performance directly affects the service life, performance and reliability of the micro-system. Especially in a system integrated by a high-power-density chip, local hot spots of high-density and tiny areas are formed in the corresponding area of the chip, and if the local areas cannot be effectively radiated, heat is continuously accumulated, and the temperature of the system is rapidly increased. Thermal management for local hot spots is a key and difficult problem of the integrated thermal management of the existing micro-system.
The microfluid heat dissipation technology is an active heat dissipation technology, and compared with the traditional passive heat dissipation technology, the heat dissipation efficiency can be improved by times. There are three main categories for microfluidic heat dissipation at present: conventional heat dissipation, two-phase heat dissipation, and jet heat dissipation. The conventional heat dissipation is to dissipate heat of the chip by circulating fluid at the bottom of the chip, so that the heat dissipation device has a stable large-area heat dissipation effect, but has higher demand on fluid flow; the two-phase heat dissipation means that liquid fluid is vaporized to form two-phase flow when cooling the chip, so that the heat dissipation efficiency is high, and meanwhile, the vaporization can also cause the problem of rapid increase of local flow resistance; the spray heat dissipation has a distributed nozzle structure, is directly cooled aiming at a local hot spot position of a chip, has higher heat dissipation efficiency, but has a complex micro-fluid structure. The heat dissipation efficiency of the three types of microfluid heat dissipation is gradually improved, the three types of microfluid heat dissipation belong to a chip-level external embedded microfluid heat dissipation module, the process compatibility of microsystem integration is poor, integration in a system is not easy, and heat dissipation of an integrated chip cannot be directly realized for a three-dimensional stacked microsystem. Aiming at the integration requirement of a micro system, the integration problem of a micro fluid heat dissipation module in the system needs to be solved urgently, and aiming at local hot spots, the three advantages of micro fluid heat dissipation are combined, so that the heat dissipation efficiency is effectively improved.
Disclosure of Invention
In order to solve the problems, the invention provides a silicon-based self-adaptive gushing type micro-fluid heat dissipation substrate and a preparation method thereof, aiming at the integration requirement of a micro-system, the integration difficulty of a micro-fluid heat dissipation module in the system is solved, and aiming at local hot spots, the heat dissipation efficiency is effectively improved.
In order to achieve the purpose, the technical scheme of the invention is as follows:
a silicon-based self-adaptive spraying type micro-fluid heat dissipation substrate is formed by stacking three layers of structures, wherein a supporting layer, a bottom micro-fluid structure layer and a top micro-fluid structure layer are sequentially arranged from bottom to top, and the silicon-based self-adaptive spraying type micro-fluid heat dissipation substrate comprises four fluid channel structures including a liquid inlet, a liquid outlet, a micro-fluid channel and a spraying port; a liquid inlet and a supporting layer liquid outlet are formed in the supporting layer; the bottom microfluid structure layer is provided with a bottom microfluid channel, a bottom gushing port and a bottom liquid outlet; the top microfluid structure layer is provided with a top microfluid channel and a top gushing port; the projections of the bottom layer gushing port and the top layer gushing port on the longitudinal plane of the heat dissipation substrate are superposed and distributed in the central area of the heat dissipation substrate in an array manner; the bottom microfluidic channel and the top microfluidic channel are respectively positioned on the lower surface of the bottom microfluidic structure layer or the top microfluidic structure layer, the bottom microfluidic channel is a transverse pair and a longitudinal pair of microfluidic channels connected with the bottom gushing port, and the top microfluidic channel is a transverse pair and a longitudinal pair of microfluidic channels connected with the top gushing port; the position of the support layer corresponds to the end part of the bottom layer microfluidic channel, and the positions of the support layer liquid outlet and the bottom layer liquid outlet correspond to the end part of the top layer microfluidic channel.
The top layer gushing port corresponds to a heat dissipation area required by the bottom of the chip, and if a special structure exists at the bottom part of the chip, the gushing port at the corresponding position in the top layer gushing port array can be removed.
The bottom layer microfluidic channel comprises a main stream fluid channel communicated with the supporting layer and a plurality of branch stream fluid channels communicated with the bottom layer gushing port. The top microfluidic channel comprises a main flow channel of the bottom liquid outlet and a plurality of branch flow channels communicated with the top gushing port.
The width of the openings of the supporting layer, the supporting layer liquid outlet and the bottom layer liquid outlet is the same as that of the main flow fluid channel.
The pattern central point position of the bottom layer gushing port corresponds to the central point position of the bottom layer micro-fluid channel, and the area of the bottom layer gushing port is smaller than the central rectangular area of the bottom layer micro-fluid channel. The pattern central point position of the top layer gushing port corresponds to the central point position of the top layer microfluid channel, and the area of the top layer gushing port is smaller than the central rectangular area of the top layer microfluid channel.
The length and width of the bottom layer gushing port or the top layer gushing port are both larger than 20 micrometers, and the thickness of the bottom layer gushing port or the top layer gushing port is 20-100 micrometers.
The volume of the bottom microfluidic channel is greater than or equal to the volume of the top microfluidic channel.
The width of each branch flow channel is 20-500 μm, the thickness of the branch flow channel is 20-500 μm, and the distance between adjacent branch flow channels is more than 20 μm.
The support layer, the bottom microfluid structure layer and the top microfluid structure layer are all made of silicon wafers as substrate materials, and the heat dissipation substrate is formed by stacking three silicon wafers in a wafer level mode.
The thickness of the bottom microfluidic structure layer is equal to the sum of the thickness of the bottom microfluidic channels and the thickness of the bottom spew port, and the thickness of the top microfluidic structure layer is equal to the sum of the thickness of the top microfluidic channels and the thickness of the bottom spew port 32.
And a gold layer with the thickness of more than 2 mu m covers the upper surface of the top microfluid structure layer and is used for welding a chip.
A preparation method of a silicon-based self-adaptive gushing type micro-fluid heat dissipation substrate comprises the following steps:
(1) forming a liquid inlet and a supporting layer liquid outlet on the supporting layer by adopting a dry etching or wet etching process, forming a bottom microfluidic channel, a bottom spewing port and a bottom liquid outlet on the bottom microfluidic structure layer, and forming a top microfluidic channel and a top spewing port on the top microfluidic structure layer;
(2) sequentially evaporating or sputtering and depositing a metal adhesion layer and an evaporating or sputtering or electroplating and depositing a metal bonding layer on the bonding surfaces of the three layers of silicon wafers, wherein the metal bonding layer is binary or multi-element eutectic bonded metal;
(3) three layers of silicon wafers are subjected to wafer-level eutectic bonding for 2 times to complete three-layer stacking of the heat dissipation substrate;
(4) and electroplating or evaporating and depositing a gold layer on the upper surface of the top microfluid structure layer.
In the step (1), the silicon wafer is a thin wafer with the thickness of less than 200 μm, and the process step needs to combine a temporary bonding process, a silicon wafer thinning process and a temporary bonding debonding process to prepare a thin wafer microfluidic channel structure.
In the preparation process of the substrate, the adapter plate and the packaging structure for system integration are prepared according to the requirements through a planar or three-dimensional metal interconnection process and a passivation process required by the system integration, so that the system integration of the microfluid heat dissipation substrate is realized.
The working principle of the self-adaptive gushing type micro-fluid heat dissipation substrate is as follows:
the fluid flows into the bottom micro-fluid structure layer from the liquid inlet of the support layer in two pairs of transverse and longitudinal directions simultaneously; simultaneously flowing to a bottom layer gushing port through a bottom layer microfluidic channel in two pairs of opposite directions in the transverse direction and the longitudinal direction, then gushing from the bottom layer gushing port to a top layer gushing port to flow into a top layer microfluidic structure layer, and directly cooling the bottom of the chip, wherein part of liquid fluid is vaporized in the process; after the fluid forms two-phase flow, the fluid simultaneously flows to a bottom layer liquid outlet through a bottom layer micro-fluid structure layer in two pairs of transverse and longitudinal opposite directions through a top layer micro-fluid channel, and then flows out from a support layer liquid outlet; in the process, the fluid flows transversely and longitudinally at the same time to compensate the flow of the fluid at the adjacent gushing ports, so that the problem of failure of microfluid heat dissipation caused by flow stagnation caused by rapid increase of flow resistance in the process of forming two-phase flow is avoided, and a stable microfluid heat dissipation circulation process is formed.
Advantageous effects
The microfluid heat dissipation substrate in the technical scheme has the process compatibility of chip and module system integration, can be applied to a switching board and a packaging structure of system integration, and realizes the system integration of microfluid modules; the microfluid heat dissipation substrate is in direct contact with the bottom of the chip, liquid fluid is sprayed to the bottom of the chip and is likely to be vaporized in the heat dissipation process, gas-liquid two-phase heat dissipation with high heat dissipation efficiency can be formed, and the structure is simpler than jet heat dissipation.
The microfluid heat dissipation base plate among this technical scheme, bottom layer and top layer microfluid structure respectively have horizontal and vertical two-way fluid channel of two pairs, each layer fluid channel is latticed structure, the intersection point coincidence of bottom layer and top layer net, the intersection point is the gushing mouth that the fluid gushes to the chip bottom, the flow of gushing mouth can be by mutual compensation between the adjacent gushing mouth, prevent near the position that chip heat flow density is big, the vaporization of liquid fluid of gushing mouth department, and then the flow resistance increases the stagnation phenomenon that appears suddenly, lead to microfluid heat dissipation failure problem, this structure has self-adaptation regulatory action, microfluid flow resistance is stable.
Drawings
The invention is further illustrated with reference to the following figures and examples.
FIG. 1 is a top view of a silicon-based adaptive-gush microfluidic heat-dissipating substrate support layer;
FIG. 2 is a front perspective view of a support layer of a silicon-based adaptive-gush microfluidic heat-dissipating substrate;
FIG. 3 is an inverted perspective view of a support layer of a silicon-based adaptive-gush microfluidic heat-dissipating substrate;
FIG. 4 is a top view of a bottom microfluidic structure layer of a silicon-based adaptive-gush microfluidic heat-dissipating substrate;
FIG. 5 is a front perspective view of a bottom microfluidic structure layer of a silicon-based adaptive-gush microfluidic heat-dissipating substrate;
FIG. 6 is an inverted perspective view of a bottom microfluidic structure layer of a silicon-based adaptive-gush microfluidic heat-dissipating substrate;
fig. 7 is a top view of a microfluidic structure layer on a top layer of a silicon-based adaptive-gush microfluidic heat dissipation substrate.
FIG. 8 is a front perspective view of a top microfluidic structure layer of a silicon-based adaptive-gush microfluidic heat-dissipating substrate;
FIG. 9 is an inverted perspective view of a top microfluidic structure layer of a silicon-based adaptive-gush microfluidic heat-dissipating substrate;
fig. 10 is an exploded front view of a silicon-based adaptive-gush microfluidic heat-dissipating substrate;
fig. 11 is an inverted perspective exploded view of a silicon-based adaptive-gush microfluidic heat-dissipating substrate.
In the drawings:
1. support layer 11, liquid inlet 12, support layer liquid outlet 2, bottom microfluid structure layer
21. Bottom microfluidic channel 22, bottom gushing port 23, bottom liquid outlet 3, top microfluidic structure layer
31. Top microfluidic channel 32, top gush port
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is further described in detail with reference to the following embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
Example (b):
as shown in fig. 1-11, a silicon-based self-adaptive spewing microfluidic heat dissipation substrate is formed by stacking three layers, wherein a support layer 1, a bottom microfluidic structure layer 2 and a top microfluidic structure layer 3 are sequentially arranged from bottom to top, and the substrate comprises four fluid channel structures including a liquid inlet, a liquid outlet, a microfluidic channel and a spewing port; a liquid inlet 11 and a supporting layer liquid outlet 12 are arranged on the supporting layer 1; the bottom microfluidic structure layer 2 is provided with a bottom microfluidic channel 21, a bottom gushing port 22 and a bottom liquid outlet 23; the top microfluidic structure layer 3 is provided with a top microfluidic channel 31 and a top gushing port 32; the projections of the bottom layer gushing port 22 and the top layer gushing port 32 on the longitudinal plane of the heat dissipation substrate are superposed and distributed in the central area of the heat dissipation substrate in an array manner; the bottom microfluidic channel 21 and the top microfluidic channel 31 are respectively located on the lower surface of the bottom microfluidic structure layer 2 or the top microfluidic structure layer 3, the bottom microfluidic channel 21 is a transverse pair and a longitudinal pair of microfluidic channels connected with the bottom spewing port 22, and the top microfluidic channel 31 is a transverse pair and a longitudinal pair of microfluidic channels connected with the top spewing port 32; the position of the liquid inlet 11 corresponds to the end of the bottom microfluidic channel 21, and the positions of the support layer liquid outlet 12 and the bottom layer liquid outlet 23 correspond to the end of the top microfluidic channel 31.
The top-layer spewing openings 32 correspond to heat dissipation areas required at the bottom of the chip, and if a special structure exists at the bottom part of the chip, spewing openings at corresponding positions in the array of top-layer spewing openings 32 can be removed.
The bottom microfluidic channel 21 includes a main flow channel communicating with the liquid inlet 11 and several branch flow channels communicating with the bottom gush port 22. The top microfluidic channel 31 includes a main flow channel of the bottom layer liquid outlet 23 and several branch flow channels communicating with the top layer gush port 32.
The opening widths of the liquid inlet 11, the support layer liquid outlet 12 and the bottom layer liquid outlet 23 are the same as the width of the main flow fluid channel.
The pattern central point position of the bottom layer gushing port 22 corresponds to the central point position of the bottom layer micro fluid channel 21, and the area of the bottom layer gushing port 22 is smaller than the central rectangular area of the bottom layer micro fluid channel 21. The position of the center point of the figure of the top layer gushing port 32 corresponds to the position of the center point of the top layer microfluidic channel 31, and the area of the top layer gushing port 32 is smaller than the central rectangular area of the top layer microfluidic channel 31.
The length and width dimensions of the bottom layer gushing port 22 or the top layer gushing port 32 are both larger than 20 μm, and the thickness of the bottom layer gushing port 22 or the top layer gushing port 32 is 20-100 μm.
The volume of the bottom microfluidic channel 21 is equal to or greater than the volume of the top microfluidic channel 31. In this embodiment, the ends of the bottom microfluidic channel 21 and the top microfluidic channel 31 are both arranged in an "L" shape, and the bottom microfluidic channel 21 and the top microfluidic channel 31 are arranged in a mirror image on the longitudinal plane of the heat dissipation substrate.
The width of each branch flow channel is 20-500 μm, the thickness of the branch flow channel is 20-500 μm, and the distance between adjacent branch flow channels is more than 20 μm.
The support layer 1, the bottom microfluidic structure layer 2 and the top microfluidic structure layer 3 are all made of silicon wafers as substrate materials, and the heat dissipation substrate is formed by stacking three layers of silicon wafers in a wafer level mode.
The thickness of the bottom microfluidic structure layer 2 is equal to the sum of the thickness of the bottom microfluidic channel 21 and the thickness of the bottom spew port 22, and the thickness of the top microfluidic structure layer 3 is equal to the sum of the thickness of the top microfluidic channel 31 and the thickness of the bottom spew port 32.
The upper surface of the top microfluidic structure layer 3 is covered with a gold layer with the thickness of more than 2 μm for chip welding.
A preparation method of a silicon-based self-adaptive gushing type micro-fluid heat dissipation substrate comprises the following steps:
(1) forming a liquid inlet 11 and a support layer liquid outlet 12 on the support layer 1, forming a bottom microfluidic channel 21, a bottom spewing port 22 and a bottom liquid outlet 23 on the bottom microfluidic structure layer 2, and forming a top microfluidic channel 31 and a top spewing port 32 on the top microfluidic structure layer 3 by adopting a dry etching or wet etching process;
(2) sequentially evaporating or sputtering and depositing a metal adhesion layer and an evaporating or sputtering or electroplating and depositing a metal bonding layer on the bonding surfaces of the three layers of silicon wafers, wherein the metal bonding layer is binary or multi-element eutectic bonded metal;
(3) three layers of silicon wafers are subjected to wafer-level eutectic bonding for 2 times to complete three-layer stacking of the heat dissipation substrate;
(4) and electroplating or evaporating and depositing a gold layer on the upper surface of the top microfluidic structure layer 3.
In the step (1), the silicon wafer is a thin wafer with the thickness of less than 200 μm, and the process step needs to combine a temporary bonding process, a silicon wafer thinning process and a temporary bonding debonding process to prepare a thin wafer microfluidic channel structure.
In the preparation process of the substrate, the adapter plate and the packaging structure for system integration are prepared according to the requirements through a planar or three-dimensional metal interconnection process and a passivation process required by the system integration, so that the system integration of the microfluid heat dissipation substrate is realized.
The above description is only of the preferred embodiments of the present invention, and it should be noted that: it will be apparent to those skilled in the art that various modifications and adaptations can be made without departing from the principles of the invention and these are intended to be within the scope of the invention.
Claims (10)
1. The utility model provides a silicon-based self-adaptation spouts little fluid heat dissipation base plate of formula which characterized in that: the structure is formed by stacking three layers, and a supporting layer (1), a bottom micro-fluid structure layer (2) and a top micro-fluid structure layer (3) are sequentially arranged from bottom to top; the supporting layer (1) is provided with four liquid inlets (11) and four supporting layer liquid outlets (12); the bottom layer microfluidic structure layer (2) is provided with a bottom layer microfluidic channel (21), a bottom layer gushing port (22) and four bottom layer liquid outlets (23); a top layer microfluidic channel (31) and a top layer gushing port (32) are arranged on the top layer microfluidic structure layer (3); the projections of the bottom layer gushing openings (22) and the top layer gushing openings (32) on the longitudinal plane of the heat dissipation substrate are superposed and distributed in the central area of the heat dissipation substrate in an array manner; the bottom microfluidic channel (21) is positioned on the lower surface of the bottom microfluidic structure layer (2), and the top microfluidic channels (31) are respectively positioned on the lower surfaces of the top microfluidic structure layers (3); the bottom layer microfluidic channel (21) is a transverse pair and a longitudinal pair of microfluidic channels connected with the bottom layer gushing port (22), and the top layer microfluidic channel (31) is a transverse pair and a longitudinal pair of microfluidic channels connected with the top layer gushing port (32) respectively; the positions of the four liquid inlets (11) correspond to the end parts of the bottom-layer microfluidic channels (21), and the positions of the four supporting-layer liquid outlets (12) and the four bottom-layer liquid outlets (23) correspond to the end parts of the top-layer microfluidic channels (31).
2. The heat dissipating substrate according to claim 1, wherein: the bottom layer microfluidic channel (21) comprises a main flow fluid channel communicated with the liquid inlet (11) and a plurality of branch flow fluid channels communicated with the bottom layer gushing port (22), and the top layer microfluidic channel (31) comprises a main flow fluid channel communicated with the bottom layer liquid outlet (23) and a plurality of branch flow fluid channels communicated with the top layer gushing port (32).
3. The heat dissipating substrate according to claim 2, wherein: the opening widths of the liquid inlet (11), the supporting layer liquid outlet (12) and the bottom layer liquid outlet (23) are the same as the width of the main flow fluid channel.
4. The heat dissipating substrate according to claim 1, wherein: the geometric centre point position of bottom gushing mouth (22) corresponds with the central point position of bottom microfluid passageway (21), the geometric centre point position of top layer gushing mouth (32) corresponds with the central point position of top layer microfluid passageway (31), the area of bottom layer gushing mouth (22) is less than the central rectangle area of bottom layer microfluid passageway (21), the area of top layer gushing mouth (32) is less than the central rectangle area of top layer microfluid passageway (31).
5. The heat dissipating substrate according to claim 1, wherein: the volume of the bottom microfluidic channel (21) is greater than or equal to the volume of the top microfluidic channel (31).
6. The heat dissipating substrate according to claim 1, wherein: the support layer (1), the bottom microfluid structure layer (2) and the top microfluid structure layer (3) are all made of silicon wafers as substrate materials, and the heat dissipation substrate is formed by stacking three silicon wafers in a wafer level mode.
7. The heat dissipating substrate according to claim 1, wherein: the thickness of the bottom microfluidic structure layer (2) is equal to the sum of the thickness of the bottom microfluidic channel (21) and the thickness of the bottom gush port (22), and the thickness of the top microfluidic structure layer (3) is equal to the sum of the thickness of the top microfluidic channel (31) and the thickness of the bottom gush port 32.
8. The heat dissipating substrate according to claim 1, wherein: the upper surface of the top microfluidic structure layer (3) is covered with a gold layer with the thickness of more than 2 mu m.
9. The method for preparing a silicon-based adaptive-gushing microfluidic heat dissipation substrate according to claim 8, wherein: comprises the following steps:
(a) a liquid inlet (11) and a support layer liquid outlet (12) are formed on the support layer (1) by adopting a dry etching or wet etching process, a bottom microfluidic channel (21), a bottom gushing port (22) and a bottom liquid outlet (23) are formed on the bottom microfluidic structure layer (2), and a top microfluidic channel (31) and a top gushing port (32) are formed on the top microfluidic structure layer (3);
(b) sequentially evaporating or sputtering and depositing a metal adhesion layer and an evaporating or sputtering or electroplating and depositing a metal bonding layer on the bonding surfaces of the three layers of silicon wafers, wherein the metal bonding layer is binary or multi-element eutectic bonded metal;
(c) three layers of silicon wafers are subjected to wafer-level eutectic bonding for 2 times to complete three-layer stacking of the heat dissipation substrate;
(d) and electroplating or evaporating and depositing a gold layer on the upper surface of the top microfluidic structure layer (3).
10. The method of claim 9, wherein: in the step (a), the silicon wafer is a thin sheet with the thickness of less than 200 μm.
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| CN100461995C (en) * | 2006-11-24 | 2009-02-11 | 北京工业大学 | Array jetting micro heat exchanger |
| US9219022B2 (en) * | 2012-03-08 | 2015-12-22 | International Business Machines Corporation | Cold plate with combined inclined impingement and ribbed channels |
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| DE112017005525T5 (en) * | 2016-11-01 | 2019-08-08 | Massachusetts Institute Of Technology | Thermal management of RF devices using embedded microjet arrays |
| CN107275297B (en) * | 2017-05-25 | 2019-05-24 | 中国电子科技集团公司第二十九研究所 | A kind of microfluid heat dissipation channel, heat dissipating method and preparation method |
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