CN110534436A - A kind of silicon substrate is adaptively gushed the fluid for radiating heat substrate and preparation method thereof that declines - Google Patents
A kind of silicon substrate is adaptively gushed the fluid for radiating heat substrate and preparation method thereof that declines Download PDFInfo
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- 239000000758 substrate Substances 0.000 title claims abstract description 73
- 239000012530 fluid Substances 0.000 title claims abstract description 58
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 39
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 39
- 239000010703 silicon Substances 0.000 title claims abstract description 39
- 238000002360 preparation method Methods 0.000 title claims abstract description 13
- 239000007788 liquid Substances 0.000 claims abstract description 59
- 238000000034 method Methods 0.000 claims description 14
- 239000002184 metal Substances 0.000 claims description 11
- 229910052751 metal Inorganic materials 0.000 claims description 11
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 8
- 239000010931 gold Substances 0.000 claims description 8
- 229910052737 gold Inorganic materials 0.000 claims description 8
- 230000005496 eutectics Effects 0.000 claims description 6
- 238000004544 sputter deposition Methods 0.000 claims description 6
- 238000005260 corrosion Methods 0.000 claims description 3
- 230000007797 corrosion Effects 0.000 claims description 3
- 238000000151 deposition Methods 0.000 claims description 3
- 230000008021 deposition Effects 0.000 claims description 3
- 238000001312 dry etching Methods 0.000 claims description 3
- 238000009713 electroplating Methods 0.000 claims description 3
- 230000008020 evaporation Effects 0.000 claims description 3
- 238000001704 evaporation Methods 0.000 claims description 3
- 239000000463 material Substances 0.000 claims description 3
- 238000007747 plating Methods 0.000 claims description 3
- 238000004062 sedimentation Methods 0.000 claims description 3
- 238000009826 distribution Methods 0.000 claims description 2
- 230000017525 heat dissipation Effects 0.000 description 16
- 230000010354 integration Effects 0.000 description 9
- 238000005516 engineering process Methods 0.000 description 8
- 230000007423 decrease Effects 0.000 description 5
- 238000001816 cooling Methods 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- 230000005514 two-phase flow Effects 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000004377 microelectronic Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000009834 vaporization Methods 0.000 description 2
- 230000008016 vaporization Effects 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 125000004122 cyclic group Chemical group 0.000 description 1
- 230000035755 proliferation Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B1/00—Devices without movable or flexible elements, e.g. microcapillary devices
- B81B1/002—Holes characterised by their shape, in either longitudinal or sectional plane
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/04—Networks or arrays of similar microstructural devices
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00023—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems without movable or flexible elements
- B81C1/00055—Grooves
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00023—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems without movable or flexible elements
- B81C1/00087—Holes
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00261—Processes for packaging MEMS devices
- B81C1/00309—Processes for packaging MEMS devices suitable for fluid transfer from the MEMS out of the package or vice versa, e.g. transfer of liquid, gas, sound
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
- B81C1/00523—Etching material
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4871—Bases, plates or heatsinks
- H01L21/4882—Assembly of heatsink parts
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/46—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids
- H01L23/473—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids by flowing liquids
- H01L23/4735—Jet impingement
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/05—Microfluidics
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
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Abstract
It adaptively gushs the fluid for radiating heat substrate and preparation method thereof that declines the present invention relates to a kind of silicon substrate, heat-radiating substrate is stacked by three-decker, sets gradually supporting layer, bottom microfluidic structures layer and top layer microfluidic structures layer from bottom to top；Liquid inlet and supporting layer liquid outlet are provided on supporting layer；Bottom microfluidic channel, bottom are arranged on bottom microfluidic structures layer to gush mouth and bottom liquid outlet；Top layer microfluidic channel and top layer are arranged on top layer microfluidic structures layer to gush mouth；Bottom microfluidic channel and top layer microfluidic channel are located at the lower surface of bottom microfluidic structures layer or top layer microfluidic structures layer；The position of liquid inlet is corresponding with the end of bottom microfluidic channel, and the position of supporting layer liquid outlet and bottom liquid outlet is corresponding with the end of top layer microfluidic channel.The present invention integrates demand for micro-system, solves the integrated problem of microfluid radiating module in systems, and be directed to hot localised points, effectively improves radiating efficiency.
Description
Technical field
The invention belongs to microelectronics and microsystems technology field, adaptively gush and decline in particular to a kind of silicon substrate
Fluid for radiating heat substrate and preparation method thereof.
Background technique
With the development of microelectronics and micro-system integrated technology, the integration density of chip and module is higher and higher, micro-system
It is integrated to develop to small size, high density, high-performance, multifunction and three-dimensional stacked direction, therefore micro-system opposite heat tube is managed
More stringent requirements are proposed.The superiority and inferiority of heat management performance will have a direct impact on the service life of micro-system, Performance And Reliability.Especially
It is in the system of high power density integrated chip, chip corresponding region will form high density, the hot localised points of very small region, if
Part is unable to get effective heat dissipation, and heat will persistently be accumulated, and system temperature sharply increases.Heat management for hot localised points is mesh
The key points and difficulties problem of preceding micro-system integrated heat pipe reason.
Microfluid heat dissipation technology is a kind of active heat removal technology, relatively traditional passive heat dissipation, and radiating efficiency can mention at double
It rises.At present for the main promising three categories of microfluid heat dissipation: conventional heat dissipation, two phase heat-radiation and injection are radiated.Conventional heat dissipation is logical
Crossing fluid has stable large area heat dissipation effect to chip cooling in chip bottom circulation, but fluid flow demand is higher；
Two phase heat-radiation vaporizes to form two phase flow when referring to fluid liquid cooled wafer, has high cooling efficiency, while vaporization also results in
Local flow resistance proliferation issues；Injection heat dissipation has distributed jet structure, is, tool directly cooling for chip hot localised points position
There is higher radiating efficiency, but microfluidic structures are complicated.The radiating efficiency of above-mentioned three kinds of microfluids heat dissipation steps up, and belongs to
The embedded microfluid radiating module outside the chip-scale, the processing compatibility integrated for micro-system is poor, be not easy to be
It is integrated in system, for three-dimensional stacked micro-system, directly integrated chip can not be realized and radiated.It is needed for micro-system is integrated
It asks, the integrated problem of urgent need to resolve microfluid radiating module in systems, and is directed to hot localised points, in conjunction with above-mentioned three kinds of microfluids
The advantage of heat dissipation, effectively improves radiating efficiency.
Summary of the invention
To solve the above problems, adaptively gushing fluid for radiating heat substrate and its preparation of declining the present invention provides a kind of silicon substrate
Method integrates demand for micro-system, solves the integrated problem of microfluid radiating module in systems, and be directed to localized heat
Point, effectively improves radiating efficiency.
To achieve the above object, technical scheme is as follows:
A kind of silicon substrate is adaptively gushed the fluid for radiating heat substrate that declines, and is stacked by three-decker, is successively set from bottom to top
Set supporting layer, bottom microfluidic structures layer and top layer microfluidic structures layer, and include liquid inlet, liquid outlet, microfluidic channel and
It gushs four kinds of fluid channel structures of mouth；Liquid inlet and supporting layer liquid outlet are provided on supporting layer；On bottom microfluidic structures layer
Setting bottom microfluidic channel, bottom are gushed mouth and bottom liquid outlet；It is logical that top layer microfluid is set on top layer microfluidic structures layer
Road and top layer are gushed mouth；Bottom gushs mouth and top layer is gushed, and projection of the mouth on heat-radiating substrate fore-and-aft plane is overlapped, and is in array
It is distributed in the central area of heat-radiating substrate；Bottom microfluidic channel and top layer microfluidic channel are located at bottom microfluidic structures
The lower surface of layer or top layer microfluidic structures layer, bottom microfluidic channel are respectively to run through bottom to gush horizontal and vertical the two of mouth
To two-way microfluidic channel, top layer microfluidic channel is respectively to run through top layer to gush horizontal and vertical two pairs of two-way microfluids of mouth
Channel；The position of supporting layer is corresponding with the end of bottom microfluidic channel, the position of supporting layer liquid outlet and bottom liquid outlet
It is corresponding with the end of top layer microfluidic channel.
Top layer gushs mouth corresponding to heat dissipation region needed for chip bottom, if there are special knots for chip bottom portion
Structure, the top layer mouth of gushing of corresponding position in mouthful array of gushing can remove.
Bottom microfluidic channel include be connected to the mainstream fluid channel of supporting layer be connected to bottom and gush several tributaries of mouth
Fluid channel.Top layer microfluidic channel include bottom liquid outlet mainstream fluid channel be connected to top layer and gush several tributaries of mouth
Fluid channel.
Opening width and the mainstream fluid channel of supporting layer, supporting layer liquid outlet and bottom liquid outlet it is of same size.
Bottom gush mouth centre of figure point position it is corresponding with the center position of bottom microfluidic channel, bottom is gushed
The area of mouth is less than the central rectangular area of bottom microfluidic channel.Top layer gush mouth centre of figure point position and top layer miniflow
The center position in body channel is corresponding, top layer gush mouth area be less than top layer microfluidic channel central rectangular area.
The length and width size of bottom gushs mouth or top layer is gushed mouth is all larger than 20 μm, and bottom gushs mouth or top layer is gushed
Mouthful with a thickness of 20-100 μm.
The volume of bottom microfluidic channel is more than or equal to the volume of top layer microfluidic channel.
The width of each tributary fluid channel be 20-500 μm, tributary fluid channel with a thickness of 20-500 μm, adjacent tributary
The spacing of fluid channel is greater than 20 μm.
Supporting layer, bottom microfluidic structures layer and top layer microfluidic structures layer are all made of silicon wafer as baseplate material, heat dissipation
Substrate is stacked by three-layer silicon wafer wafer level.
The thickness of bottom microfluidic structures layer is equal to the thickness of bottom microfluidic channel and bottom is gushed the sum of the thickness of mouth,
The thickness of top layer microfluidic structures layer is equal to the thickness of top layer microfluidic channel and bottom is gushed the sum of the thickness of mouth 32.
The upper surface of top layer microfluidic structures layer is covered with the layer gold that thickness is greater than 2 μm, the welding for chip.
A kind of silicon substrate is adaptively gushed the preparation method of fluid for radiating heat substrate of declining, and is comprised the following steps:
(1) dry etching or wet corrosion technique are used, liquid inlet and supporting layer liquid outlet are formed on supporting layer, the bottom of at
Form bottom microfluidic channel on layer microfluidic structures layer, bottom is gushed mouth and bottom liquid outlet, in top layer microfluidic structures layer
Upper formation top layer microfluidic channel and top layer are gushed mouth；
(2) three-layer silicon wafer bonding face successively evaporate or sputtering sedimentation metal adhesion layers and evaporation or sputtering or electroplating deposition gold
Belong to bonded layer, wherein metal bonding layer is the metal that binary or multi-element eutectic are bonded；
(3) three-layer silicon wafer completes the three level stack of heat-radiating substrate by 2 wafer level eutectic bondings；
(4) in the plating of the upper surface of top layer microfluidic structures layer or hydatogenesis layer gold.
In step (1), silicon wafer is thin slice of the thickness less than 200 μm, and processing step need to subtract in conjunction with interim bonding technology, silicon wafer
Thin technique and the solution bonding technology being temporarily bonded, prepare thin slice microfluidic channel structure.
In substrate preparation, as desired by plane needed for the system integration or 3-dimensional metal interconnection process and blunt
Chemical industry skill, preparation are used for the pinboard and encapsulating structure of the system integration, realize the system integration of microfluid heat-radiating substrate.
Base is adaptively gushed the working principle of fluid for radiating heat substrate of declining:
Fluid flows into bottom microfluidic structures layer from the supporting layer of supporting layer with horizontal and vertical two pairs in pairs simultaneously；By
Bottom microfluidic channel flows to bottom simultaneously with horizontal and vertical two pairs opposite directions and gushs mouth, then gushs from bottom mouth of gushing
To top layer gush mouth flow into top layer microfluidic structures layer, direct cooled wafer bottom, the process is with operative liquid fluid vaporization；
After fluid forms two phase flow, bottom microfluid is passed through simultaneously with horizontal and vertical two pairs of inverse directions by top layer microfluidic channel
Structure sheaf flows to bottom liquid outlet, and then flows out from supporting layer liquid outlet；It should horizontal and vertical in the process while streaming flow benefit
The flow for repaying adjacent mouthful fluid of gushing avoids the formation of the surge of two phase flow process flow resistance and brings flow stagnation, microfluid is caused to radiate
The problem of failure, forms stable microfluid heat dissipation cyclic process.
Beneficial effect
The processing compatibility that microfluid heat-radiating substrate in the technical program has chip, modular system integrated, can apply
In the pinboard and encapsulating structure of the system integration, the system integration of microfluidic module is realized；Microfluid heat-radiating substrate and chip
Bottom directly contacts, and fluid liquid is gushed to chip bottom and may be vaporized in radiation processes, can be formed with high cooling efficiency
Gas-liquid two-phase heat dissipation, and structure is simpler than injection heat dissipation.
Microfluid heat-radiating substrate in the technical program, bottom and top layer microfluidic structures respectively have horizontal and vertical two pairs pairs
To fluid channel, each grid-shaped structure in layer fluid channel, bottom and top layer grid intersection point are overlapped, and intersection point is fluid surges to core
The flow of the mouth of gushing of piece bottom, mouth of gushing can prevent big in chip heat flow density by mutually compensating between adjacent mouth of gushing
Near position, fluid liquid is vaporized at mouth of gushing, and then flow stagnation phenomenon occurs in flow resistance surge, leads to microfluid failure
Problem, the structure have automatic adjusument effect, and microfluid flow resistance is stablized.
Detailed description of the invention
Present invention will be further explained below with reference to the attached drawings and examples.
Fig. 1 is that silicon substrate is adaptively gushed the top view of fluid for radiating heat substrate supporting layer of declining；
Fig. 2 be silicon substrate adaptively gush decline fluid for radiating heat substrate supporting layer just set perspective view；
Fig. 3 is that silicon substrate is adaptively gushed the inverted perspective view of fluid for radiating heat substrate supporting layer of declining；
Fig. 4 is that silicon substrate is adaptively gushed the top view of fluid for radiating heat substrate bottom microfluidic structures layer of declining；
Fig. 5 be silicon substrate adaptively gush decline fluid for radiating heat substrate bottom microfluidic structures layer just set perspective view；
Fig. 6 is that silicon substrate is adaptively gushed the inverted perspective view of fluid for radiating heat substrate bottom microfluidic structures layer of declining；
Fig. 7 is that silicon substrate is adaptively gushed the top view of fluid for radiating heat substrate top layer microfluidic structures layer of declining.
Fig. 8 be silicon substrate adaptively gush decline fluid for radiating heat substrate top layer microfluidic structures layer just set perspective view；
Fig. 9 is that silicon substrate is adaptively gushed the inverted perspective view of fluid for radiating heat substrate top layer microfluidic structures layer of declining；
Figure 10 be silicon substrate adaptively gush decline fluid for radiating heat substrate just set exploded perspective figure；
Figure 11 is that silicon substrate is adaptively gushed the inversion exploded perspective figure of fluid for radiating heat substrate of declining.
In attached drawing:
1, supporting layer 11, liquid inlet 12, supporting layer liquid outlet 2, bottom microfluidic structures layer
21, bottom microfluidic channel 22, bottom are gushed mouth 23, bottom liquid outlet 3, top layer microfluidic structures layer
31, top layer microfluidic channel 32, top layer are gushed mouth
Specific embodiment
In order to make the objectives, technical solutions, and advantages of the present invention clearer, with reference to embodiments, to the present invention
It is further elaborated.It should be appreciated that the specific embodiments described herein are merely illustrative of the present invention, it is not used to
Limit the present invention.
Embodiment:
As shown in attached drawing 1- attached drawing 11, a kind of silicon substrate is adaptively gushed the fluid for radiating heat substrate that declines, and is stacked by three-decker
It forms, sets gradually supporting layer 1, bottom microfluidic structures layer 2 and top layer microfluidic structures layer 3 from bottom to top, and include into liquid
Mouth, liquid outlet, microfluidic channel and four kinds of fluid channel structures of mouth of gushing；Liquid inlet 11 and supporting layer are provided on supporting layer 1
Liquid outlet 12；Bottom microfluidic channel 21, bottom are arranged on bottom microfluidic structures layer 2 to gush mouth 22 and bottom liquid outlet 23；
Top layer microfluidic channel 31 and top layer are arranged on top layer microfluidic structures layer 3 to gush mouth 32；Bottom gushs mouth 22 and top layer is gushed
Projection of the mouth 32 on heat-radiating substrate fore-and-aft plane is overlapped, and in array distribution in the central area of heat-radiating substrate；Bottom miniflow
Body channel 21 and top layer microfluidic channel 31 are located at the following table of bottom microfluidic structures layer 2 or top layer microfluidic structures layer 3
Face, bottom microfluidic channel 21 are respectively to gush horizontal and vertical two pairs of two-way microfluidic channels of mouth 22 through bottom, top layer
Microfluidic channel 31 is respectively to gush horizontal and vertical two pairs of two-way microfluidic channels of mouth 32 through top layer；The position of liquid inlet 11
Set, the position of supporting layer liquid outlet 12 and bottom liquid outlet 23 and top layer miniflow corresponding with the end of bottom microfluidic channel 21
The end in body channel 31 is corresponding.
Top layer gushs mouth 32 corresponding to heat dissipation region needed for chip bottom, if there are special knots for chip bottom portion
Structure, the top layer mouth of gushing of corresponding position in 32 array of mouth of gushing can remove.
If bottom microfluidic channel 21 include connection liquid inlet 11 mainstream fluid channel be connected to bottom and gush mouth 22
Heavenly Stems and Earthly Branches stream fluid channel.The mainstream fluid channel of top layer microfluidic channel 31 including bottom liquid outlet 23 be connected to top layer and gush mouth
32 several tributary fluid channels.
Liquid inlet 11, supporting layer liquid outlet 12 and the opening width of bottom liquid outlet 23 and the width phase in mainstream fluid channel
Together.
Bottom gush mouth 22 centre of figure point position it is corresponding with the center position of bottom microfluidic channel 21, bottom
Gush mouth 22 area be less than bottom microfluidic channel 21 central rectangular area.Top layer is gushed the centre of figure point position of mouth 32
Corresponding with the center position of top layer microfluidic channel 31, the gush area of mouth 32 of top layer is less than top layer microfluidic channel 31
Central rectangular area.
The length and width size of bottom gushs mouth 22 or top layer is gushed mouth 32 is all larger than 20 μm, and bottom is gushed mouth 22 or top
Layer gush mouth 32 with a thickness of 20-100 μm.
The volume of bottom microfluidic channel 21 is more than or equal to the volume of top layer microfluidic channel 31.In the present embodiment, bottom
The end of microfluidic channel 21 and top layer microfluidic channel 31 is the setting of " L " type, the bottom microfluidic channel 21 and top layer
Microfluidic channel 31 is in mirror settings on heat-radiating substrate fore-and-aft plane.
The width of each tributary fluid channel be 20-500 μm, tributary fluid channel with a thickness of 20-500 μm, adjacent tributary
The spacing of fluid channel is greater than 20 μm.
Supporting layer 1, bottom microfluidic structures layer 2 and top layer microfluidic structures layer 3 are all made of silicon wafer as baseplate material, dissipate
Hot substrate is stacked by three-layer silicon wafer wafer level.
The thickness of bottom microfluidic structures layer 2 is equal to the thickness of bottom microfluidic channel 21 and bottom the is gushed thickness of mouth 22
The sum of, the thickness of top layer microfluidic structures layer 3 be equal to top layer microfluidic channel 31 thickness and bottom gush mouth 32 thickness it
With.
The upper surface of top layer microfluidic structures layer 3 is covered with the layer gold that thickness is greater than 2 μm, the welding for chip.
A kind of silicon substrate is adaptively gushed the preparation method of fluid for radiating heat substrate of declining, and is comprised the following steps:
(1) dry etching or wet corrosion technique are used, forms liquid inlet 11 and supporting layer liquid outlet on supporting layer 1
12, bottom microfluidic channel 21, bottom are formed on bottom microfluidic structures layer 2 and is gushed mouth 22 and bottom liquid outlet 23, are being pushed up
It forms top layer microfluidic channel 31 on layer microfluidic structures layer 3 and top layer is gushed mouth 32；
(2) three-layer silicon wafer bonding face successively evaporate or sputtering sedimentation metal adhesion layers and evaporation or sputtering or electroplating deposition gold
Belong to bonded layer, wherein metal bonding layer is the metal that binary or multi-element eutectic are bonded；
(3) three-layer silicon wafer completes the three level stack of heat-radiating substrate by 2 wafer level eutectic bondings；
(4) in the plating of the upper surface of top layer microfluidic structures layer 3 or hydatogenesis layer gold.
In step (1), silicon wafer is thin slice of the thickness less than 200 μm, and processing step need to subtract in conjunction with interim bonding technology, silicon wafer
Thin technique and the solution bonding technology being temporarily bonded, prepare thin slice microfluidic channel structure.
In substrate preparation, as desired by plane needed for the system integration or 3-dimensional metal interconnection process and blunt
Chemical industry skill, preparation are used for the pinboard and encapsulating structure of the system integration, realize the system integration of microfluid heat-radiating substrate.
The above is only a preferred embodiment of the present invention, it should be pointed out that: for the ordinary skill people of the art
For member, various improvements and modifications may be made without departing from the principle of the present invention, these improvements and modifications are also answered
It is considered as protection scope of the present invention.
Claims (10)
- The fluid for radiating heat substrate that declines 1. a kind of silicon substrate is adaptively gushed, it is characterised in that: stacked by three-decker, from lower and On set gradually supporting layer (1), bottom microfluidic structures layer (2) and top layer microfluidic structures layer (3)；On the supporting layer (1) It is provided with liquid inlet (11) and supporting layer liquid outlet (12)；It is logical that bottom microfluid is set on the bottom microfluidic structures layer (2) Road (21), bottom are gushed mouth (22) and bottom liquid outlet (23)；Top layer microfluid is set on the top layer microfluidic structures layer (3) Channel (31) and top layer gush mouth (32)；The bottom gushs mouth (22) and top layer gushs mouth (32) in heat-radiating substrate fore-and-aft plane On projection be overlapped, and in array distribution in the central area of heat-radiating substrate；The bottom microfluidic channel (21) is located at bottom The lower surface of microfluidic structures layer (2), the top layer microfluidic channel (31) are located under top layer microfluidic structures layer (3) Surface；The bottom microfluidic channel (21) be gush through bottom mouth (22) horizontal and vertical two pairs of two-way microfluids it is logical Road, the top layer microfluidic channel (31) be respectively through top layer gush mouth (32) horizontal and vertical two pairs of two-way microfluids it is logical Road；The position of the liquid inlet (11) is corresponding with the end of bottom microfluidic channel (21), the supporting layer liquid outlet (12) It is corresponding with the end of top layer microfluidic channel (31) with the position of bottom liquid outlet (23).
- 2. heat-radiating substrate according to claim 1, it is characterised in that: the bottom microfluidic channel (21) include be connected into The mainstream fluid channel of liquid mouth (11) be connected to bottom and gush several tributary fluid channels of mouth (22), the top layer microfluid is logical Road (31) include connection bottom liquid outlet (23) mainstream fluid channel be connected to top layer and gush several tributary fluids of mouth (32) Channel.
- 3. heat-radiating substrate according to claim 2, it is characterised in that: the liquid inlet (11), supporting layer liquid outlet (12) It is of same size with the opening width of bottom liquid outlet (23) and mainstream fluid channel.
- 4. heat-radiating substrate according to claim 1, it is characterised in that: the bottom is gushed the geometric center point of mouth (22) Set it is corresponding with the center position of bottom microfluidic channel (21), the top layer gush mouth (32) geometric center point position with The center position of top layer microfluidic channel (31) is corresponding, the bottom gush mouth (22) area it is logical less than bottom microfluid The central rectangular area in road (21), the top layer gush mouth (32) area be less than top layer microfluidic channel (31) central rectangular Area.
- 5. heat-radiating substrate according to claim 1, it is characterised in that: the volume of the bottom microfluidic channel (21) is greater than Equal to the volume of top layer microfluidic channel (31).
- 6. heat-radiating substrate according to claim 1, it is characterised in that: the supporting layer (1), bottom microfluidic structures layer (2) and top layer microfluidic structures layer (3) is all made of silicon wafer as baseplate material, and the heat-radiating substrate passes through three-layer silicon wafer wafer level It stacks.
- 7. heat-radiating substrate according to claim 1, it is characterised in that: the thickness etc. of the bottom microfluidic structures layer (2) It gushs the sum of the thickness of mouth (22) in the thickness and bottom of bottom microfluidic channel (21), the top layer microfluidic structures layer (3) Thickness be equal to the thickness of top layer microfluidic channel (31) and bottom is gushed the sum of the thickness of mouth 32.
- 8. heat-radiating substrate according to claim 1, it is characterised in that: the upper surface of the top layer microfluidic structures layer (3) It is covered with the layer gold that thickness is greater than 2 μm.
- 9. the preparation method of fluid for radiating heat substrate of declining of adaptively being gushed according to the described in any item silicon substrates of claim 8, special Sign is: it comprises the following steps:(1) dry etching or wet corrosion technique are used, forms liquid inlet (11) and supporting layer liquid outlet on supporting layer (1) (12), bottom microfluidic channel (21) is formed on bottom microfluidic structures layer (2), bottom is gushed mouth (22) and bottom liquid outlet (23), top layer microfluidic channel (31) is formed on top layer microfluidic structures layer (3) and top layer gushs mouth (32)；(2) three-layer silicon wafer bonding face successively evaporate or sputtering sedimentation metal adhesion layers and evaporation or sputtering or electroplating deposition metallic bond Layer is closed, wherein metal bonding layer is the metal that binary or multi-element eutectic are bonded；(3) three-layer silicon wafer completes the three level stack of heat-radiating substrate by 2 wafer level eutectic bondings；(4) in the plating of the upper surface of top layer microfluidic structures layer (3) or hydatogenesis layer gold.
- 10. preparation method according to claim 9, it is characterised in that: in the step (1), the silicon wafer is that thickness is small In 200 μm of thin slice.
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