CN110534423A - Semiconductor devices and preparation method thereof - Google Patents
Semiconductor devices and preparation method thereof Download PDFInfo
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- CN110534423A CN110534423A CN201910884939.1A CN201910884939A CN110534423A CN 110534423 A CN110534423 A CN 110534423A CN 201910884939 A CN201910884939 A CN 201910884939A CN 110534423 A CN110534423 A CN 110534423A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 61
- 238000002360 preparation method Methods 0.000 title abstract description 8
- 239000000758 substrate Substances 0.000 claims abstract description 190
- 238000000034 method Methods 0.000 claims abstract description 65
- 238000009966 trimming Methods 0.000 claims abstract description 28
- 238000004519 manufacturing process Methods 0.000 claims description 32
- 239000000463 material Substances 0.000 claims description 10
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- 229910003978 SiClx Inorganic materials 0.000 claims 1
- OBNDGIHQAIXEAO-UHFFFAOYSA-N [O].[Si] Chemical compound [O].[Si] OBNDGIHQAIXEAO-UHFFFAOYSA-N 0.000 claims 1
- 230000008569 process Effects 0.000 abstract description 29
- 235000012431 wafers Nutrition 0.000 description 16
- 238000010586 diagram Methods 0.000 description 7
- 238000013138 pruning Methods 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 230000008859 change Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000000227 grinding Methods 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 238000013467 fragmentation Methods 0.000 description 3
- 238000006062 fragmentation reaction Methods 0.000 description 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000010297 mechanical methods and process Methods 0.000 description 2
- 230000005226 mechanical processes and functions Effects 0.000 description 2
- 238000006748 scratching Methods 0.000 description 2
- 230000002393 scratching effect Effects 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 238000000137 annealing Methods 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000011946 reduction process Methods 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000010008 shearing Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02013—Grinding, lapping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02021—Edge treatment, chamfering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
The present invention provides a kind of semiconductor devices and preparation method thereof, the described method includes: providing the device architecture after a bonding, device architecture after the bonding includes support substrate of the position in upper device substrate and position under, the device substrate includes effective coverage and the inactive area for surrounding the effective coverage, effective coverage and the inactive area of the device substrate is thinned, first time planarization is carried out to the device substrate effective coverage and inactive area；Trim the part of the inactive area of the device substrate, inactive area after forming trimming, inactive area behind effective coverage and trimming to the device substrate carries out second and planarizes, due to the device substrate thickness via twice planarization carry out it is thinned, and trimming technique is located between flatening process twice, so that influence of the planarization process for the device substrate becomes smaller, the caliper uniformity of the device substrate is improved, to improve the performance of semiconductor devices.
Description
Technical field
The present invention relates to technical field of manufacturing semiconductors, and in particular to a kind of semiconductor devices and preparation method thereof.
Background technique
As the demand of the miniaturization of electronic component, lightweight and multifunction increasingly increases, integrated circuit is to chip
Ultrathin requires higher and higher.MEMS (MEMS), imaging sensor (CIS:CMOS Image Sensor), laminated core
Piece (stacked die), multi-chip package (Multi chip package) etc. all can ultra-thin core of the applied thickness less than 50 μm
Piece.
In the prior art, ultra-thin chip is obtained by carrying out bonding and wafer thinning technique to semiconductor wafer mostly.For
For non-EPI (epitaxial layer) substrate, reduction process generally comprises following steps: step S1, by device substrate and support substrate
It is bonded；Step S2, the surface of the device substrate is thinned；Step S3, the marginal portion of the device substrate is trimmed；Step
S4, the device substrate is planarized.Planarization process inevitably generates device substrate edge in step S4
Scuffing forms inclined surface, and when device substrate edge, lateral dimension is smaller, and planarization thickness thinning is thicker, and planarization process is to device
The abraded area that part edges of substrate generates is bigger.However, after due to carrying out trimming technique to the device substrate edge, the device
Part edges of substrate is largely removed, and the edge of the device substrate carries out flatening process relatively close to effective coverage later,
Device substrate edge can be generated to scratch and form inclined surface, the caliper uniformity of device substrate is impacted, but also having
The bad control of caliper uniformity for imitating region, finally impacts the performance of semiconductor devices.
Summary of the invention
Based on problem described above, the purpose of the present invention is to provide a kind of semiconductor devices and preparation method thereof, mention
The caliper uniformity of high device substrate improves the performance of semiconductor devices.
To achieve the above object, the present invention provides a kind of production method of semiconductor devices, comprising:
Device architecture after providing a bonding, the device architecture after the bonding includes position in upper device substrate and position
The support substrate under is set, the device substrate includes effective coverage and the inactive area for surrounding the effective coverage；
Effective coverage and the inactive area of the device substrate is thinned；
First time planarization is carried out to the device substrate effective coverage and inactive area；
The part of the inactive area of the device substrate is trimmed, the inactive area after forming trimming；
Inactive area behind effective coverage and trimming to the device substrate carries out second and planarizes.
Optionally, in the production method of the semiconductor devices, the inactive area includes first edge and the second side
Edge, the first edge surround the effective coverage and form bonding face with support substrate, and the second edge surrounds described the
One edge and with the not formed bonding face of support substrate, and the relatively described support substrate is hanging.
Optionally, in the production method of the semiconductor devices, the part of the inactive area of the device substrate is trimmed,
Refer to the part for trimming the first edge of inactive area of the device substrate.
Optionally, in the production method of the semiconductor devices, the part of the inactive area of the device substrate is trimmed,
The part support substrate is removed simultaneously.
Optionally, in the production method of the semiconductor devices, the method that forms the first edge and second edge
It include: to trim the marginal portion of the device substrate to residue from bonding face side before bonding together to form the device architecture
Segment thickness.
Optionally, in the production method of the semiconductor devices, before bonding together to form the device architecture, institute is formed
After stating first edge and second edge, further includes: formed on the bonding face of the device substrate and the support substrate exhausted
Edge layer.
Optionally, in the production method of the semiconductor devices, the material of the insulating layer after silica comprising nitrogenizing
Silicon.
Optionally, in the production method of the semiconductor devices, the effective coverage of the device substrate and invalid is thinned
Region is to the first edge for completely removing the device substrate.
Correspondingly, the present invention also provides a kind of semiconductor devices, using the production method of semiconductor devices as described above
It is made, comprising:
Support substrate；And
Thinned device substrate in the support substrate.
Optionally, in the semiconductor devices, further includes: insulating layer is located at the support substrate and the device serves as a contrast
Between bottom.
Compared with prior art, the device in semiconductor devices provided by the invention and preparation method thereof, after a bonding is provided
Part structure is thinned after effective coverage and the inactive area of the device substrate, first to the device substrate effective coverage and
Inactive area carries out first time planarization, then trims the part of the inactive area of the device substrate again, trims due to the
Uneven part caused by primary planarization, then carries out second of planarization again, due to the device substrate thickness via
Planarization carries out thinned twice, and trims technique and be located between flatening process twice, so that planarization process is for the device
The influence of part substrate becomes smaller, and improves the caliper uniformity of the device substrate, to improve the performance of semiconductor devices.
Detailed description of the invention
Fig. 1~4 are each step structural schematic diagram of the production method of semiconductor device.
Fig. 5 is the flow chart of the production method of semiconductor devices provided by one embodiment of the invention.
Fig. 6~10 are each step structural representation of the production method of semiconductor devices provided by one embodiment of the invention
Figure.
Figure 11 is trimming technique provided by one embodiment of the invention to the schematic diagram of device substrate edge effect.
Specific embodiment
Fig. 1~4 are each step structural schematic diagram of the production method of semiconductor device.Shown in please refer to figs. 1 to 4,
The production method of semiconductor devices is specific as follows.
Firstly, please refer to shown in Fig. 1, provide a bonded wafer, bonded wafer include position upper device wafers 10 with
Carrier wafer 20 of the position under.The first insulating layer 13 and the are also formed at device wafers 10 and 20 bonded interface of carrier wafer
Two insulating layers 21.
The device wafers 10 include effective coverage 11 and the inactive area 12 for surrounding the effective coverage 11.The nothing
Imitate region 12 include first edge 101 and second edge 102, the first edge 101 surround the effective coverage 11 and with load
Body wafer 20 forms bonding face, the second edge 102 surround the first edge 101 and with carrier wafer 20 is not formed is bonded
Face, and the relatively described carrier wafer 20 is hanging.
Then, it please refers to shown in Fig. 2, the effective coverage 11 that the device substrate 10 is thinned and inactive area 12 to going completely
Except the second edge portion 102 of the device substrate 10.Then, it please refers to shown in Fig. 3, shears the invalid of the device substrate 10
Region 12, and remove the marginal portion of the part carrier wafer 20.Finally, please referring to shown in Fig. 4, to the device substrate 10
Effective coverage 11 and trimming after inactive area 12 planarized, but during being planarized, unavoidably
Meeting overmastication is caused to the edge of the effective coverage 11 in the device wafers 10, while can be also exposed the load
Overmastication is caused in the marginal portion of body wafer 20, thus causes influence to the caliper uniformity of device substrate, but also having
The bad control of caliper uniformity for imitating region 11, finally impacts the performance of semiconductor devices.
In view of the above-mentioned problems, inventor provides a kind of manufacturing method of semiconductor device, comprising: the device after providing a bonding
Structure, the device architecture after the bonding include support substrate of the position in upper device substrate and position under, the device
Substrate includes effective coverage and the inactive area for surrounding the effective coverage；Effective coverage and the nothing of the device substrate is thinned
Imitate region；First time planarization is carried out to the device substrate effective coverage and inactive area；Trim the nothing of the device substrate
The part in region is imitated, the inactive area after forming trimming；The inactive area behind effective coverage and trimming to the device substrate
Second is carried out to planarize.
Correspondingly, the present invention also provides a kind of semiconductor devices, using manufacturing method of semiconductor device system as described above
It forms, comprising: support substrate, the thinned device substrate in the support substrate.
In semiconductor devices provided by the invention and preparation method thereof, device architecture after providing a bonding is thinned described
After the effective coverage of device substrate and inactive area, first is carried out to the device substrate effective coverage and inactive area first
The part of the inactive area of the device substrate is then trimmed in secondary planarization again, is trimmed caused by being planarized as first time
Uneven part then carries out second of planarization again, since the thickness of the device substrate is subtracted via planarization twice
It is thin, and trim technique and be located between flatening process twice, so that influence of the planarization process for the device substrate becomes smaller,
The caliper uniformity of the device substrate is improved, to improve the performance of semiconductor devices.
To keep the contents of the present invention more clear and easy to understand, below in conjunction with Figure of description, the contents of the present invention are done into one
Walk explanation.Certainly the invention is not limited to the specific embodiment, and general replacement well known to those skilled in the art is also contained
Lid is within the scope of the present invention.
Obviously, the described embodiment is only a part of the embodiment of the present invention, instead of all the embodiments.Based on this hair
Embodiment in bright, all other implementation obtained by those of ordinary skill in the art without making creative efforts
Example, shall fall within the protection scope of the present invention.Secondly, the present invention has carried out detailed statement using schematic diagram, the present invention is being described in detail
When example, for ease of description, schematic diagram is not partially enlarged in proportion to the general scale, should not be to this as restriction of the invention.
Fig. 5 is the flow chart of the production method of semiconductor devices provided by one embodiment of the invention.Fig. 6~10 are this hair
Each step structural schematic diagram of the production method of semiconductor devices provided by a bright embodiment.Below in conjunction with attached drawing 5 and attached drawing 6
Each step of the production method of semiconductor devices is described in detail in~10 pairs of the present embodiment.
In the step s 100, it please refers to shown in Fig. 5 and Fig. 6, the device architecture after a bonding is provided, the device after the bonding
Part structure includes support substrate 200 of the position in upper device substrate 100 and position under, and the device substrate 100 includes
It imitates region 110 and surrounds the inactive area 120 of the effective coverage 110.The effective coverage 110 is used to form various devices
Structure, and the region that the inactive area 120 is invalid as the device substrate can't be used to form device architecture, rear
It can be partially removed in continuous technique.The inactive area 120 includes first edge 121 and second edge 122, the first edge
121 surround the effective coverage 110 and form bonding face with support substrate 200, and the second edge 122 surrounds first side
Edge 121 and with the not formed bonding face of support substrate 200, and the support substrate 200 is hanging relatively.
The device substrate 100 is used to form the device layer of final products, therefore its material should be common semiconductor material
Material, such as monocrystalline silicon, are also possible to other such as compound semiconductors.And support substrate 200 is due to only playing a supporting role, therefore
Selection range is wider, and other than monocrystalline silicon and the compound semiconductor materials of routine, being also possible to sapphire even can be with
It is metal substrate.In the embodiment of the present invention, the material of the device substrate 100 and the support substrate 200 is monocrystalline silicon.
The method for forming the first edge 121 and second edge 122 includes: before bonding, to repair from bonding face side
The marginal portion of the device substrate 100 is cut to remainder thickness, to form the first edge 121 of the device substrate 100
With second edge 122.In embodiments of the present invention, pruning method includes that the marginal portion of a part is cut away using cutter
Mechanical process.Cutter in vertical direction, horizontal direction or at an angle can trim the marginal portion.Another
In embodiment, ability beam is can be used in pruning method, such as laser beam or focused ion book trim the marginal portion.Another
In one embodiment, pruning method trims the marginal portion using selecting etch.The present invention for trimming specific method simultaneously
It is not construed as limiting.
Trimming the marginal portion and forming first edge 121 and a reason of second edge 122 is to avoid edges broken
Defect.Edges broken is likely to occur in bonding process when the device substrate 100 is bonded to the support substrate 200
When.In bonding process, the device substrate 100 is processed by skiving and is thinned, although most device substrate 100 is in skiving
It is supported in the process by the support substrate 200, but the marginal portion of taper is not supported.Therefore, when the device substrate
100 by skiving, when pressure is applied to marginal portion, marginal portion fragmentation due to shortage intensity and supporting surface.In this hair
In bright embodiment, marginal portion is trimmed to about to form the second edge 122 hanging with the support substrate 200, accordingly even when edge
Fragmentation occurs in bonding, and the region of fragmentation will be also removed in reduction processing.When the marginal portion of the device substrate 100
A part in pruning method be removed after, the device substrate 100 present remaining new marginal portion, i.e. second edge
122, the second edge 122 is cut up during subsequent another trimming.
The first insulating layer 130 and second insulating layer are also formed between the device substrate 100 and the support substrate 200
210.The insulating layer 130 is used to form the insulating buried layer of final products with the insulating layer 210, and material can be silica
Perhaps the growing method such as silicon nitride can be chemical meteorology deposition or thermal oxide.
It is (molten that the method that the device substrate 100 and the support substrate 200 are bonded can be anode linkage, Direct Bonding
Melt bonding), low-temperature bonding, Intermediate Layer Bonding or binder bonding.Before bonding, need to the device substrate 100 with it is described
Support substrate 200 is cleaned, to remove surface particle that may be present.It certainly, after bonding, can be with para-linkage face reality
It applies annealing to reinforce, so that the firmness of bonding face can satisfy subsequent thinned and flatening process requirement.
In step s 200, it please refers to shown in Fig. 5 and Fig. 7, effective coverage 110 and the nothing of the device substrate 100 is thinned
Imitate region 120.
In the present embodiment, mechanical grinding method and chemical thinning processes can be used.In mechanical grinding method, largely
Substrate material is removed from the device substrate 100.Chemical thinning processes may include lithographic method well known in the art, to institute
The application etching agent of device substrate 100 is stated so that the thickness of the device substrate 100 is thinned.
In the embodiment of the present invention, the device substrate 100 is thinned to the second edge for completely removing the device substrate 100
122, the effective coverage of the remaining device substrate 100 and first edge 121, the remaining thickness of the device substrate 100 can be with
It is determined according to application type and design requirement.
In step S300, please refer to shown in Fig. 5 and Fig. 8, to 100 effective coverage 110 of device substrate and dead space
Domain 120 carries out first time planarization.The device is thinned in step S200 using mechanical grinding method or chemical thinning processes
Substrate 100 to certain thickness, the mechanical lapping and chemical etching etc. can all cause the surface of the device substrate 100 (to subtract
Sake) it is uneven, influence the thinned effect of substrate bonding, it is therefore desirable to the rough surface of the device substrate 100
Carry out planarization process.Due to being carried out for the first time before inactive area 120 (the first edge part 121 after being thinned) is trimmed to about
Planarization process, remains the inactive area 120 of device substrate 100, and planarization process generates device substrate edge and scratches shape
At inclined surface occur mainly in inactive area 120, effective coverage 110 will not be damaged.
As shown in figure 8, in first time planarization process, can to the first edge 121 for being located at the device substrate 100 with
And overmastication is caused in the marginal portion of the support substrate 200, leads to the first edge 121 and the support substrate 200
Marginal portion there is inclined surface, and effective coverage 110 is not by the damage of planarization process.
In step S400, please refers to shown in Fig. 5 and Fig. 9, trim the portion of the inactive area 120 of the device substrate 100
Point, the inactive area after forming trimming.
Specifically, trimming the part of the inactive area 120 of the device substrate 100, refer to the trimming device substrate 100
Inactive area first edge 121 part.
Preferably, the part of the inactive area of the device substrate 100 is trimmed, while removing the part support substrate
200。
Technique is trimmed to device substrate edge there are certain influence, Figure 11 is trimming provided by one embodiment of the invention
Schematic diagram of the technique (Trim) to device substrate edge effect.As shown in figure 11, abscissa is wafer radius, and ordinate is grinding
Amount, when the boundary Trim is 1.4mm, to the coverage at device substrate edge in 4mm or so, when the boundary Trim is 2.4mm,
Coverage is in 5mm or so, and when the boundary Trim is 3mm, coverage is in 9mm or so, so trimming the device substrate portion
When dividing inactive area, meeting retaining means substrate portions inactive area, the transitional region as subsequent technique.
In embodiments of the present invention, pruning method includes that the part first edge 121 and part are cut away using cutter
The mechanical process of the support substrate 200.Cutter can be in vertical direction, horizontal direction or at an angle described in trimming
First edge 121.In another embodiment, ability beam can be used in pruning method, such as laser beam or focused ion book are repaired
Cut the first edge 121.In another embodiment, pruning method trims the first edge 121 using selecting etch.This
Invention for trimming specific method and be not construed as limiting.
Inclined surface caused by being planarized in the previous step as first time is largely removed in this step, please be joined
It examines shown in Fig. 8 and Fig. 9, the inclined surface in the support substrate 200 is removed, positioned at the nothing of the first edge 121
The inclined surface in effect region 120 is largely removed.After shearing procedure is placed in first time planarization surface, no
It only can achieve the purpose of trimming, defect caused by the first time planarization can also be removed.
In step S500, effective coverage 110 shown in Fig. 5 and Figure 10, to the device substrate 100 and invalid is please referred to
Region 120 carries out second and planarizes.When 120 lateral dimension of inactive area is smaller, planarization thickness thinning is thicker, at planarization
It is bigger to manage the abraded area generated to effective coverage 110.The present invention trims technique and is located between flatening process twice, makes every time
The thinned thickness of planarization reduces, and when planarizing for the first time, 120 lateral dimension of inactive area is larger, planarization thickness thinning compared with
Small, planarization process generates the inclined surface for scratching and being formed to device substrate edge and occurs mainly in inactive area 120, effective district
Domain 110 will not be damaged；After trimming technique, 120 lateral dimension of inactive area reduces but there are also parts to retain；Second flat
When change, due to still remaining with partial invalidity region 120, planarization process generates the inclination for scratching and being formed to device substrate edge
Surface still occurs mainly in inactive area 120, and effective coverage 110 will not be damaged, and is this time left after planarization process
Inactive area 120 be also accordingly removed.
It is planarized by first time planarization with described second, so that the support substrate 100 reaches scheduled
Thickness.It is planarized twice due to having, the thinned thickness of planarization reduces every time, also, tilts caused by planarizing for the first time
Surface is removed by subsequent trimming technique, and therefore, the inclination angle of inclined surface caused by second of planarization can decline to a great extent, from
And the flatness and homogeneity of the device substrate 100 are improved, while also improving the caliper uniformity of effective coverage 110.
In the production method of semiconductor devices provided by the invention, device substrate 100 and support substrate 200 are subjected to key
It closes, is thinned after the back side of the device substrate 100, first time planarization is carried out to the back side of the device substrate 100 first,
Then the first edge part for trimming the device substrate 100 again trims uneven portion caused by planarizing as first time
Point, then carry out second of planarization again, due to the device substrate 100 thickness via twice planarization carry out it is thinned, and
It trims technique to be located between flatening process twice, so that influence of the planarization process for the device substrate becomes smaller, improve
The caliper uniformity of the device substrate, to improve the performance of semiconductor devices.
Correspondingly, the present invention also provides a kind of semiconductor devices, using the production method of semiconductor devices as described above
It is made.It please refers to shown in Figure 10, the semiconductor devices includes:
Support substrate 200；And
Thinned device substrate 100 in the support substrate 200.
The device substrate 100 includes effective coverage 110 and the inactive area 120 for surrounding the effective coverage 110.
Preferably, further includes: insulating layer, between the support substrate 200 and the device substrate 100.The present invention
In embodiment, the first insulating layer 130 and second insulating layer are formed between the support substrate 200 and the device substrate 100
210, first insulating layer 130 is close to the device substrate 100, and the second insulating layer 210 is close to the support substrate
200.The material of first insulating layer 130 and the second insulating layer 210 is including but not limited to silicon oxide or silicon nitride.
The thickness of the semiconductor devices being made using the production method of above-mentioned semiconductor devices, device substrate is equal
One property is increased substantially, to improve the performance of semiconductor devices.
In conclusion in semiconductor devices provided by the invention and preparation method thereof, device architecture after a bonding is provided,
It is thinned after effective coverage and the inactive area of the device substrate, first to the device substrate effective coverage and inactive area
First time planarization is carried out, then trims the part of the inactive area of the device substrate again, is trimmed due to flat for the first time
Uneven part caused by change, then carries out second of planarization again, since the thickness of the device substrate is via flat twice
Change carries out thinned, and trims technique and is located at twice between flatening process, so that planarization process is for the device substrate
Influence becomes smaller, and improves the caliper uniformity of the device substrate, to improve the performance of semiconductor devices.
Foregoing description is only the description to present pre-ferred embodiments, not to any restriction of the scope of the invention, this hair
Any change, the modification that the those of ordinary skill in bright field does according to the disclosure above content, belong to the protection of claims
Range.
Claims (10)
1. a kind of production method of semiconductor devices characterized by comprising
Device architecture after providing a bonding, the device architecture after the bonding includes that position exists in upper device substrate and position
Under support substrate, the device substrate includes effective coverage and the inactive area for surrounding the effective coverage；
Effective coverage and the inactive area of the device substrate is thinned；
First time planarization is carried out to the device substrate effective coverage and inactive area；
The part of the inactive area of the device substrate is trimmed, the inactive area after forming trimming；
Inactive area behind effective coverage and trimming to the device substrate carries out second and planarizes.
2. the production method of semiconductor devices as described in claim 1, which is characterized in that the inactive area includes the first side
Edge and second edge, the first edge surround the effective coverage and form bonding face, the second edge with support substrate
Surround the first edge and with the not formed bonding face of support substrate, and the relatively described support substrate is hanging.
3. the production method of semiconductor devices as claimed in claim 2, which is characterized in that trim the invalid of the device substrate
The part in region refers to the part for trimming the first edge of inactive area of the device substrate.
4. the production method of semiconductor devices as claimed in claim 3, which is characterized in that trim the invalid of the device substrate
The part in region, while removing the part support substrate.
5. the production method of semiconductor devices as claimed in claim 2, which is characterized in that form the first edge and second
The method at edge includes: that the edge of the device substrate is trimmed from bonding face side before bonding together to form the device architecture
Partially to remainder thickness.
6. the production method of semiconductor devices as claimed in claim 5, which is characterized in that bonding together to form the device architecture
Before, it is formed after the first edge and second edge, further includes: in being bonded for the device substrate and the support substrate
Insulating layer is formed on face.
7. the production method of semiconductor devices as claimed in claim 6, which is characterized in that the material of the insulating layer includes oxygen
Silicon nitride after SiClx.
8. the production method of semiconductor devices as claimed in claim 2, which is characterized in that the effective of the device substrate is thinned
Region and inactive area are to the second edge for completely removing the device substrate.
9. a kind of semiconductor devices is made of the production method of semiconductor devices such as according to any one of claims 1 to 8
It forms characterized by comprising
Support substrate；And
Thinned device substrate in the support substrate.
10. semiconductor devices as claimed in claim 9, which is characterized in that further include: insulating layer is located at the support substrate
Between the device substrate.
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