CN110534410A - A kind of semiconductor chip production method - Google Patents
A kind of semiconductor chip production method Download PDFInfo
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- CN110534410A CN110534410A CN201910744363.9A CN201910744363A CN110534410A CN 110534410 A CN110534410 A CN 110534410A CN 201910744363 A CN201910744363 A CN 201910744363A CN 110534410 A CN110534410 A CN 110534410A
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- crystal bar
- silicon crystal
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- semiconductor chip
- wafer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02013—Grinding, lapping
Abstract
The invention belongs to chip production fields, especially a kind of semiconductor chip production method, it is not easy to control the precision of manufacturing procedure when for the processing of existing silicon crystal bar, the higher problem of rejection rate for causing silicon crystal bar to be processed, now propose following scheme, it is the following steps are included: S1: preparing silicon crystal bar, the dimension data of silicon crystal bar is inputted into computer, the manufacturing procedure of silicon crystal bar is simulated, then machine is operated according to analogue data to process silicon crystal bar, silicon crystal bar is sliced after processing is completed, obtains wafer；S2: film, photoetching development, etching are carried out to wafer；S3: to implanting ions in wafer, semiconductor is generated；S4: testing semiconductor, and test is encapsulated after completing；S5: can the product after checking encapsulation work normally, and can be prepared by semiconductor chip by test, and the present invention can effectively improve the machining accuracy of silicon crystal bar, reduce rejection rate, improve production efficiency.
Description
Technical field
The present invention relates to chip production technical field more particularly to a kind of semiconductor chip production methods.
Background technique
Semiconductor chip: etch, wiring, the manufactured semiconductor device for being able to achieve certain function are carried out on semiconductor sheet material
Part, silicon crystal bar are essential things in semiconductor chip production, and silicon crystal bar is processed before use.
In the prior art, it is not easy to control the precision of manufacturing procedure when processing silicon crystal bar, leads to silicon crystal bar
The rejection rate of processing is higher, therefore we have proposed a kind of semiconductor chip production methods, for solving the above problems.
Summary of the invention
The purpose of the present invention is to solve the essence being not easy to when silicon crystal bar processing to manufacturing procedure exists in the prior art
Degree is controlled, the higher disadvantage of rejection rate for causing silicon crystal bar to be processed, and a kind of semiconductor chip production method proposed.
To achieve the goals above, present invention employs following technical solutions:
A kind of semiconductor chip production method, comprising the following steps:
S1: preparing silicon crystal bar, and the dimension data of silicon crystal bar is inputted computer, is simulated to the manufacturing procedure of silicon crystal bar, then
Machine is operated according to analogue data to process silicon crystal bar, and silicon crystal bar is sliced after processing is completed, obtains wafer；
S2: film, photoetching development, etching are carried out to wafer；
S3: to implanting ions in wafer, semiconductor is generated；
S4: testing semiconductor, and test is encapsulated after completing；
S5: can the product after checking encapsulation work normally, and can be prepared by semiconductor chip by test.
Preferably, in the S1, the silicon crystal bar processed to needs is scanned, and the data of scanning are uploaded to computer, root
It is compared according to the data needed after the data and processing of the silicon crystal bar of upload, processing side is designed according to the data deviation of comparison
Case.
Preferably, the processing scheme includes polishing, cutting, chamfering and grinding scheme, is existed according to the processing scheme of design
Procedure of processing is simulated on computer, is carried out after the completion of simulation to by the data of obtained silicon crystal bar and data actually required
Comparison is collected process data used in processing scheme after qualified.
Preferably, the process data includes the control data of grinding apparatus, the control data of cutting equipment, chamfering device
Control data and milling apparatus control data, by obtained process data be separately input to grinding apparatus, cutting equipment, fall
The controlling terminal of angle equipment and milling apparatus, data control equipment operates controlling terminal based on the received, completes processing.
Preferably, the grinding apparatus is equipped with fixture, and silicon crystal bar is placed on the workbench of grinding apparatus, folder is used
Silicon crystal bar is fixed in tool, and controlling terminal control grinding apparatus polishes to the surface of silicon crystal bar, logical while polishing
Clast, dust that dust catcher generates polishing is crossed to be collected.
Preferably, the cutting equipment includes driving mechanism and cutter, passes through the movement of driving mechanisms control cutter, driving
Mechanism is controlled by controlling terminal, the silicon crystal bar after the completion of polishing is placed on the cutting bed of cutting equipment, using fixture to silicon
Crystal bar is fixed, and then moves closer to silicon crystal bar by driving mechanisms control cutter, and completion is sliced silicon crystal bar, obtains crystalline substance
It is round, chamfering, grinding are carried out to wafer after the completion of slice.
Preferably, in the S4, electrical characteristic detection is carried out to each crystal grain of semiconductor in such a way that needle is surveyed.
Preferably, it in the S3, since the region of exposure on wafer, is put into chemical ion mixed liquor, in wafer
Implanting ions generate P, N based semiconductor.
Preferably, in the S1, the process for preparing silicon crystal bar is as follows: block-like high-purity compound crystal silicon is placed in quartz crucible
It is interior, it is heated to 1420-1450 °C, melts it completely, after the temperature stabilization for melting slurry to silicon, crystal seed is slowly inserted into
It is long, finally it is kept completely separate crystal bar and liquid level to get silicon crystal bar is arrived.
Preferably, wafer is detected after chamfering, grinding, avoids the occurrence of corner angle, burr, chipping, crack, edge dirt
Contaminate phenomenon.
Compared with prior art, the beneficial effects of the present invention are:
(1) this programme is scanned by the silicon crystal bar processed to needs, the data of scanning is uploaded to computer, according to upload
The data needed after the data of silicon crystal bar and processing are compared, and design processing scheme according to the data deviation of comparison, it is ensured that add
The accuracy of work scheme；
(2) this programme on computers simulates procedure of processing according to the processing scheme of design, to will obtain after the completion of simulation
The data of silicon crystal bar compared with data actually required, process data used in processing scheme is received after qualified
Collection operates machine according to analogue data and processes to silicon crystal bar, can be improved the processing precision of silicon crystal bar；
(3) present invention can effectively improve the machining accuracy of silicon crystal bar, reduce rejection rate, improve production efficiency.
Specific embodiment
The following is a clear and complete description of the technical scheme in the embodiments of the invention, it is clear that described embodiment
Only a part of the embodiment of the present invention, instead of all the embodiments.
Embodiment one
A kind of semiconductor chip production method, comprising the following steps:
S1: preparing silicon crystal bar, and the process for preparing silicon crystal bar is as follows: block-like high-purity compound crystal silicon being placed in quartz crucible, is added
Heat melts it completely to 1420 °C, after the temperature stabilization for melting slurry to silicon, crystal seed is slowly inserted to growth, is finally made
Crystal bar and liquid level are kept completely separate to get to silicon crystal bar, and the silicon crystal bar processed to needs is scanned, the data of scanning are uploaded to
Computer is compared according to the data needed after the data of the silicon crystal bar of upload and processing, is designed according to the data deviation of comparison
Processing scheme, processing scheme includes polishing, cutting, chamfering and grinding scheme, according to the processing scheme of design on computers to adding
Work step is simulated suddenly, is compared after the completion of simulation to by the data of obtained silicon crystal bar and data actually required, qualified
Process data used in processing scheme is collected afterwards, process data includes the control data of grinding apparatus, cutting equipment
Control data, the control data of the control data of chamfering device and milling apparatus, obtained process data is separately input to
The controlling terminal of grinding apparatus, cutting equipment, chamfering device and milling apparatus, controlling terminal data control equipment based on the received
Processing is completed in operating, is then operated machine according to analogue data and is processed to silicon crystal bar, carries out after processing is completed to silicon crystal bar
Slice, obtains wafer；
S2: film, photoetching development, etching are carried out to wafer；
S3: since the region of exposure on wafer, being put into chemical ion mixed liquor, to implanting ions in wafer, generates P, N class
Semiconductor；
S4: testing semiconductor, and test is encapsulated after completing, and carries out in such a way that needle is surveyed to each crystal grain of semiconductor
Electrical characteristic detection；
S5: can the product after checking encapsulation work normally, and can be prepared by semiconductor chip by test, by needing to process
Silicon crystal bar be scanned, the data of scanning are uploaded to computer, according to what is needed after the data and processing of the silicon crystal bar of upload
Data are compared, and design processing scheme according to the data deviation of comparison, it is ensured that the accuracy of processing scheme, according to adding for design
Work scheme on computers simulates procedure of processing, after the completion of simulation to by the data of obtained silicon crystal bar with it is actually required
Data compare, and are collected after qualified to process data used in processing scheme, operate machine pair according to analogue data
Silicon crystal bar is processed, and can be improved the processing precision of silicon crystal bar, and the present invention can effectively improve the processing essence of silicon crystal bar
Degree reduces rejection rate, improves production efficiency.
In the present invention, grinding apparatus is equipped with fixture, and silicon crystal bar is placed on the workbench of grinding apparatus, fixture is used
Silicon crystal bar is fixed, controlling terminal control grinding apparatus polishes to the surface of silicon crystal bar, passes through while polishing
Dust catcher is collected clast, the dust of polishing generation, and cutting equipment includes driving mechanism and cutter, passes through driving mechanism control
The movement of cutter processed, driving mechanism are controlled by controlling terminal, and the silicon crystal bar after the completion of polishing is placed on to the cutting of cutting equipment
On platform, silicon crystal bar is fixed using fixture, silicon crystal bar is then moved closer to by driving mechanisms control cutter, is completed to silicon wafer
Stick is sliced, and is obtained wafer, is carried out chamfering, grinding to wafer after the completion of slice, examine after chamfering, grinding to wafer
It surveys, avoids the occurrence of corner angle, burr, chipping, crack, edge contamination phenomenon, be scanned by the silicon crystal bar processed to needs, it will
The data of scanning are uploaded to computer, are compared according to the data needed after the data of the silicon crystal bar of upload and processing, according to than
Pair data deviation design processing scheme, it is ensured that the accuracy of processing scheme, according to the processing scheme of design on computers to adding
Work step is simulated suddenly, is compared after the completion of simulation to by the data of obtained silicon crystal bar and data actually required, qualified
Process data used in processing scheme is collected afterwards, machine is operated according to analogue data, silicon crystal bar is processed, energy
The processing precision of silicon crystal bar is enough improved, the present invention can effectively improve the machining accuracy of silicon crystal bar, reduce rejection rate, improve
Production efficiency.
Embodiment two
A kind of semiconductor chip production method, comprising the following steps:
S1: preparing silicon crystal bar, and the process for preparing silicon crystal bar is as follows: block-like high-purity compound crystal silicon being placed in quartz crucible, is added
Heat melts it completely to 1430 °C, after the temperature stabilization for melting slurry to silicon, crystal seed is slowly inserted to growth, is finally made
Crystal bar and liquid level are kept completely separate to get to silicon crystal bar, and the silicon crystal bar processed to needs is scanned, the data of scanning are uploaded to
Computer is compared according to the data needed after the data of the silicon crystal bar of upload and processing, is designed according to the data deviation of comparison
Processing scheme, processing scheme includes polishing, cutting, chamfering and grinding scheme, according to the processing scheme of design on computers to adding
Work step is simulated suddenly, is compared after the completion of simulation to by the data of obtained silicon crystal bar and data actually required, qualified
Process data used in processing scheme is collected afterwards, process data includes the control data of grinding apparatus, cutting equipment
Control data, the control data of the control data of chamfering device and milling apparatus, obtained process data is separately input to
The controlling terminal of grinding apparatus, cutting equipment, chamfering device and milling apparatus, controlling terminal data control equipment based on the received
Processing is completed in operating, is then operated machine according to analogue data and is processed to silicon crystal bar, carries out after processing is completed to silicon crystal bar
Slice, obtains wafer；
S2: film, photoetching development, etching are carried out to wafer；
S3: since the region of exposure on wafer, being put into chemical ion mixed liquor, to implanting ions in wafer, generates P, N class
Semiconductor；
S4: testing semiconductor, and test is encapsulated after completing, and carries out in such a way that needle is surveyed to each crystal grain of semiconductor
Electrical characteristic detection；
S5: can the product after checking encapsulation work normally, and can be prepared by semiconductor chip by test, by needing to process
Silicon crystal bar be scanned, the data of scanning are uploaded to computer, according to what is needed after the data and processing of the silicon crystal bar of upload
Data are compared, and design processing scheme according to the data deviation of comparison, it is ensured that the accuracy of processing scheme, according to adding for design
Work scheme on computers simulates procedure of processing, after the completion of simulation to by the data of obtained silicon crystal bar with it is actually required
Data compare, and are collected after qualified to process data used in processing scheme, operate machine pair according to analogue data
Silicon crystal bar is processed, and can be improved the processing precision of silicon crystal bar, and the present invention can effectively improve the processing essence of silicon crystal bar
Degree reduces rejection rate, improves production efficiency.
In the present invention, grinding apparatus is equipped with fixture, and silicon crystal bar is placed on the workbench of grinding apparatus, fixture is used
Silicon crystal bar is fixed, controlling terminal control grinding apparatus polishes to the surface of silicon crystal bar, passes through while polishing
Dust catcher is collected clast, the dust of polishing generation, and cutting equipment includes driving mechanism and cutter, passes through driving mechanism control
The movement of cutter processed, driving mechanism are controlled by controlling terminal, and the silicon crystal bar after the completion of polishing is placed on to the cutting of cutting equipment
On platform, silicon crystal bar is fixed using fixture, silicon crystal bar is then moved closer to by driving mechanisms control cutter, is completed to silicon wafer
Stick is sliced, and is obtained wafer, is carried out chamfering, grinding to wafer after the completion of slice, examine after chamfering, grinding to wafer
It surveys, avoids the occurrence of corner angle, burr, chipping, crack, edge contamination phenomenon, be scanned by the silicon crystal bar processed to needs, it will
The data of scanning are uploaded to computer, are compared according to the data needed after the data of the silicon crystal bar of upload and processing, according to than
Pair data deviation design processing scheme, it is ensured that the accuracy of processing scheme, according to the processing scheme of design on computers to adding
Work step is simulated suddenly, is compared after the completion of simulation to by the data of obtained silicon crystal bar and data actually required, qualified
Process data used in processing scheme is collected afterwards, machine is operated according to analogue data, silicon crystal bar is processed, energy
The processing precision of silicon crystal bar is enough improved, the present invention can effectively improve the machining accuracy of silicon crystal bar, reduce rejection rate, improve
Production efficiency.
Embodiment three
A kind of semiconductor chip production method, comprising the following steps:
S1: preparing silicon crystal bar, and the process for preparing silicon crystal bar is as follows: block-like high-purity compound crystal silicon being placed in quartz crucible, is added
Heat melts it completely to 1450 °C, after the temperature stabilization for melting slurry to silicon, crystal seed is slowly inserted to growth, is finally made
Crystal bar and liquid level are kept completely separate to get to silicon crystal bar, and the silicon crystal bar processed to needs is scanned, the data of scanning are uploaded to
Computer is compared according to the data needed after the data of the silicon crystal bar of upload and processing, is designed according to the data deviation of comparison
Processing scheme, processing scheme includes polishing, cutting, chamfering and grinding scheme, according to the processing scheme of design on computers to adding
Work step is simulated suddenly, is compared after the completion of simulation to by the data of obtained silicon crystal bar and data actually required, qualified
Process data used in processing scheme is collected afterwards, process data includes the control data of grinding apparatus, cutting equipment
Control data, the control data of the control data of chamfering device and milling apparatus, obtained process data is separately input to
The controlling terminal of grinding apparatus, cutting equipment, chamfering device and milling apparatus, controlling terminal data control equipment based on the received
Processing is completed in operating, is then operated machine according to analogue data and is processed to silicon crystal bar, carries out after processing is completed to silicon crystal bar
Slice, obtains wafer；
S2: film, photoetching development, etching are carried out to wafer；
S3: since the region of exposure on wafer, being put into chemical ion mixed liquor, to implanting ions in wafer, generates P, N class
Semiconductor；
S4: testing semiconductor, and test is encapsulated after completing, and carries out in such a way that needle is surveyed to each crystal grain of semiconductor
Electrical characteristic detection；
S5: can the product after checking encapsulation work normally, and can be prepared by semiconductor chip by test, by needing to process
Silicon crystal bar be scanned, the data of scanning are uploaded to computer, according to what is needed after the data and processing of the silicon crystal bar of upload
Data are compared, and design processing scheme according to the data deviation of comparison, it is ensured that the accuracy of processing scheme, according to adding for design
Work scheme on computers simulates procedure of processing, after the completion of simulation to by the data of obtained silicon crystal bar with it is actually required
Data compare, and are collected after qualified to process data used in processing scheme, operate machine pair according to analogue data
Silicon crystal bar is processed, and can be improved the processing precision of silicon crystal bar, and the present invention can effectively improve the processing essence of silicon crystal bar
Degree reduces rejection rate, improves production efficiency.
In the present invention, grinding apparatus is equipped with fixture, and silicon crystal bar is placed on the workbench of grinding apparatus, fixture is used
Silicon crystal bar is fixed, controlling terminal control grinding apparatus polishes to the surface of silicon crystal bar, passes through while polishing
Dust catcher is collected clast, the dust of polishing generation, and cutting equipment includes driving mechanism and cutter, passes through driving mechanism control
The movement of cutter processed, driving mechanism are controlled by controlling terminal, and the silicon crystal bar after the completion of polishing is placed on to the cutting of cutting equipment
On platform, silicon crystal bar is fixed using fixture, silicon crystal bar is then moved closer to by driving mechanisms control cutter, is completed to silicon wafer
Stick is sliced, and is obtained wafer, is carried out chamfering, grinding to wafer after the completion of slice, examine after chamfering, grinding to wafer
It surveys, avoids the occurrence of corner angle, burr, chipping, crack, edge contamination phenomenon, be scanned by the silicon crystal bar processed to needs, it will
The data of scanning are uploaded to computer, are compared according to the data needed after the data of the silicon crystal bar of upload and processing, according to than
Pair data deviation design processing scheme, it is ensured that the accuracy of processing scheme, according to the processing scheme of design on computers to adding
Work step is simulated suddenly, is compared after the completion of simulation to by the data of obtained silicon crystal bar and data actually required, qualified
Process data used in processing scheme is collected afterwards, machine is operated according to analogue data, silicon crystal bar is processed, energy
The processing precision of silicon crystal bar is enough improved, the present invention can effectively improve the machining accuracy of silicon crystal bar, reduce rejection rate, improve
Production efficiency.
The semiconductor chip production method proposed by embodiment one, two, three, can effectively improve the processing of silicon crystal bar
Precision reduces rejection rate, improves production efficiency, and embodiment three is most preferred embodiment.
The foregoing is only a preferred embodiment of the present invention, but scope of protection of the present invention is not limited thereto,
Anyone skilled in the art in the technical scope disclosed by the present invention, according to the technique and scheme of the present invention and its
Inventive concept is subject to equivalent substitution or change, should be covered by the protection scope of the present invention.
Claims (10)
1. a kind of semiconductor chip production method, which comprises the following steps:
S1: preparing silicon crystal bar, and the dimension data of silicon crystal bar is inputted computer, is simulated to the manufacturing procedure of silicon crystal bar, then
Machine is operated according to analogue data to process silicon crystal bar, and silicon crystal bar is sliced after processing is completed, obtains wafer；
S2: film, photoetching development, etching are carried out to wafer；
S3: to implanting ions in wafer, semiconductor is generated；
S4: testing semiconductor, and test is encapsulated after completing；
S5: can the product after checking encapsulation work normally, and can be prepared by semiconductor chip by test.
2. a kind of semiconductor chip production method according to claim 1, which is characterized in that in the S1, add to needs
The silicon crystal bar of work is scanned, and the data of scanning are uploaded to computer, according to needs after the data and processing of the silicon crystal bar of upload
Data be compared, according to the data deviation of comparison design processing scheme.
3. a kind of semiconductor chip production method according to claim 2, which is characterized in that the processing scheme includes beating
Mill, cutting, chamfering and grinding scheme, on computers simulate procedure of processing according to the processing scheme of design, simulation is completed
It compares to by the data of obtained silicon crystal bar and data actually required, is processed after qualified to used in processing scheme afterwards
Data are collected.
4. a kind of semiconductor chip production method according to claim 3, which is characterized in that the process data includes beating
Control data, the control data of cutting equipment, the control data of the control data of chamfering device and milling apparatus of equipment are ground, it will
Obtained process data is separately input to the controlling terminal of grinding apparatus, cutting equipment, chamfering device and milling apparatus, and control is eventually
Data control equipment operates based on the received at end, completes processing.
5. a kind of semiconductor chip production method according to claim 4, which is characterized in that the grinding apparatus is equipped with
Silicon crystal bar is placed on the workbench of grinding apparatus by fixture, and silicon crystal bar is fixed using fixture, and controlling terminal control is beaten
Mill equipment polishes to the surface of silicon crystal bar, and clast, the dust generated by dust catcher to polishing while polishing carries out
It collects.
6. a kind of semiconductor chip production method according to claim 4, which is characterized in that the cutting equipment includes driving
Motivation structure and cutter, by the movement of driving mechanisms control cutter, driving mechanism is controlled by controlling terminal, after the completion of polishing
Silicon crystal bar is placed on the cutting bed of cutting equipment, is fixed using fixture to silicon crystal bar, is then cut by driving mechanisms control
Knife moves closer to silicon crystal bar, and completion is sliced silicon crystal bar, obtains wafer, carries out chamfering, grinding to wafer after the completion of slice.
7. a kind of semiconductor chip production method according to claim 1, which is characterized in that in the S4, surveyed by needle
Mode to each crystal grain of semiconductor carry out electrical characteristic detection.
8. a kind of semiconductor chip production method according to claim 1, which is characterized in that in the S3, from wafer
Exposed region starts, and is put into chemical ion mixed liquor, to implanting ions in wafer, generates P, N based semiconductor.
9. a kind of semiconductor chip production method according to claim 1, which is characterized in that in the S1, prepare silicon wafer
The process of stick is as follows: block-like high-purity compound crystal silicon being placed in quartz crucible, 1420-1450 °C is heated to, melts it completely
Change, after the temperature stabilization for melting slurry to silicon, crystal seed is slowly inserted to growth, is finally kept completely separate crystal bar with liquid level, i.e.,
Obtain silicon crystal bar.
10. a kind of semiconductor chip production method according to claim 6, which is characterized in that crystalline substance after chamfering, grinding
Circle is detected, and corner angle, burr, chipping, crack, edge contamination phenomenon are avoided the occurrence of.
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| CN116207078A (en) * | 2023-04-28 | 2023-06-02 | 智科博芯(北京)科技有限公司 | Chip structure and manufacturing and testing method thereof |
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