CN106596225A - Method for preparing transmission electron microscope sample - Google Patents
Method for preparing transmission electron microscope sample Download PDFInfo
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- CN106596225A CN106596225A CN201611170475.0A CN201611170475A CN106596225A CN 106596225 A CN106596225 A CN 106596225A CN 201611170475 A CN201611170475 A CN 201611170475A CN 106596225 A CN106596225 A CN 106596225A
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- electron microscope
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- chip
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N1/00—Sampling; Preparing specimens for investigation
- G01N1/28—Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q
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- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
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- Analytical Chemistry (AREA)
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Abstract
The invention provides a method for preparing a transmission electron microscope sample. The method comprises: providing a to-be-observed chip, the to-be-observed chip containing a to-be-observed area; thinning the front and/or back surface of the to-be-observed chip to obtain an initial sample; fixing a hollow ring to the front surface of the initial sample, the to-be-observed area being located in the hollow ring; thinning the initial sample through dry etching to obtain the transmission electron microscope sample. In the method for preparing the transmission electron microscope sample provided in the invention, a hollow ring is fixed to a thinned initial sample, a to-be-observed area is determined through the hollow ring, and the thinned initial sample is treated through dry etching, thus preparing a sample suitable for being observed by a transmission electron microscope, forming a huge observation area, meeting requirements of relevant cases, filling in the blank of a failure analysis technology, and improving the working efficiency.
Description
Technical field
The present invention relates to field of semiconductor manufacture, the method for more particularly to preparing sample for use in transmitted electron microscope.
Background technology
With the development of semiconductor fabrication, the size increasingly micro of components and parts, semiconductor chip is developing, production and
The situation of failure inevitably occurs during use.With present semiconductor chip to quality and reliability requirement not
Disconnected to improve, failure analysis work also seems more and more important, is analyzed by chip failure, and chip designer can be helped to find
The problems such as improper in the mismatch of defect, technological parameter in design or design and operation.For single bit is lost in chip
The analysis case of effect, Product Failure Analysis engineer generally requires to cut out this bit from chip and makes sample and put
Go to observe the sample whether textural anomaly in transmission electron microscope (Transmission Electron Microscope, TEM).
During the failure analysis of semiconductor chip, it is often necessary to which chip is prepared into into sample sheet, then with transmission
Structure on electron microscopy observation analysis sample sheet.The existing method for preparing sample sheet mainly includes two kinds, and one kind is with focusing
Ion beam (Focused Ion Beam, FIB) is processed, and another kind is with grinding and coordinate the thinning instrument (Precision of precision ion
Ion Polishing System, PIPS) processed.The sample prepared with focused ion beam can only at most accomplish tens squares
The area of micron；With grind and coordinate the thinning instrument of precision ion mode at most can only prepare hundreds of square micron sample it is thin
Piece.Both modes cannot all realize prepared by the sample sheet of square millimeter area, but the analysis requirement for having some special exists
Carry out in the sample scope of square millimeter area.
Therefore, how to provide a kind of larger sample for use in transmitted electron microscope of observation area is that those skilled in the art need to solve
Problem.
The content of the invention
It is an object of the invention to provide the method for preparing sample for use in transmitted electron microscope, to solve the transmission electron microscope sample of prior art
The less problem of product observation area.
To solve above-mentioned technical problem, the present invention provides a kind of method for preparing sample for use in transmitted electron microscope, including：
Chip to be observed is provided, the chip to be observed includes a region to be observed；
The front and/or the back side of the chip to be observed are carried out thinning, obtain first sample；
One cavity ring is fixed on into the first sample front, the region to be observed is located in the cavity ring；
The first sample is carried out by dry etching thinning, obtain sample for use in transmitted electron microscope.
Optionally, in the method for preparing sample for use in transmitted electron microscope, treat to described using grinding and/or by the way of etching
The front and/or the back side of observation chip carries out thinning.
Optionally, in the method for preparing sample for use in transmitted electron microscope, the first sample is carried out by dry etching thinning
Including：Being face-up put into the first sample in fast reaction plasma chambers platform, using quickly removing silicon removing process pair
The first sample carries out thinning.
Optionally, in the method for preparing sample for use in transmitted electron microscope, the cavity ring inner area is 1mm2～4mm2。
Optionally, in the method for preparing sample for use in transmitted electron microscope, the cavity ring is fixed on described by thermal gels
First sample front.
Optionally, in the method for preparing sample for use in transmitted electron microscope, the material of the cavity ring is copper.
Optionally, in the method for preparing sample for use in transmitted electron microscope, the chip to be observed includes substrate and positioned at institute
State the structure sheaf on substrate, wherein, the substrate near or chip to be observed the back side, the structure sheaf treats near described
The front of observation chip.
Optionally, in the method for preparing sample for use in transmitted electron microscope, before the thinning first sample, also include：Measurement
The thickness of the first sample substrate.
Optionally, in the method for preparing sample for use in transmitted electron microscope, by first sample substrate described in sweep electron microscopic measure
Thickness.
Optionally, the front and/or the back side in the method for preparing sample for use in transmitted electron microscope, to the chip to be observed
Carry out thinning, obtain first sample including substrate, the thickness of the substrate is 0～600nm.
In sum, in the method for preparing sample for use in transmitted electron microscope that the present invention is provided, a cavity ring is fixed on thinning
On first sample after process, region to be observed is determined by cavity ring, then by the first sample after thinning described in dry etching, so as to
The sample of suitable transmission electron microscope observation is prepared into, the observation area of overlarge area (square millimeter rank) is formed, related case is met
Example demand, fills up FAILURE ANALYSIS TECHNOLOGY blank, improves work efficiency.
Description of the drawings
Fig. 1 is the flow chart of the method for preparing sample for use in transmitted electron microscope of the embodiment of the present invention；
Fig. 2 is the schematic diagram of the first sample of the embodiment of the present invention；
Fig. 3 is the schematic diagram of the first sample for being provided with cavity ring of the embodiment of the present invention.
Specific embodiment
In order that objects, features and advantages of the present invention can become apparent from understandable, accompanying drawing is referred to.It should be clear that this explanation
Structure, ratio, size depicted in book institute accompanying drawings etc., only to coordinate the content disclosed in description, for being familiar with this
The personage of technology understands and reads, and is not limited to enforceable qualificationss of the invention, therefore does not have technical essence meaning
Justice, the modification of any structure, the change of proportionate relationship or the adjustment of size, in effect and institute for not affecting the present invention can be generated
Under the purpose that can be reached, all should still fall in the range of disclosed technology contents are obtained and can covered.
As shown in figure 1, the present invention provides a kind of method for preparing sample for use in transmitted electron microscope, including：
S10, offer chip to be observed, the chip to be observed includes a region to be observed；
S20, front and/or the back side to the chip to be observed carry out thinning, obtain first sample；
S30, a cavity ring is fixed on the first sample front, the region to be observed is located in the cavity ring；
S40, the first sample is carried out by dry etching thinning, obtain sample for use in transmitted electron microscope.
Present disclosure is introduced in more detail below according to step shown in Fig. 1.
First, as shown in Figure 2, there is provided chip to be observed 10, the chip to be observed be semiconductor chip, by cutting or
The processing modes such as cutting form the part-structure that a certain size has region to be observed 11.
Then, the front and/or the back side of the chip to be observed 10 are carried out thinning, obtains first sample, wait to see by thinning
Survey chip 10 to dispose unnecessary and may affect the part observed, chip to be observed 10 can be thinned to into region to be observed 11 attached
Closely.Optionally, the front and/or the back side of the chip to be observed are carried out using grinding and/or by the way of etching thinning, you can
It is unnecessary from the front and/or the back side of chip to be observed and affect the part of observation to remove by way of grinding and/or etching,
Make the thickness of the first sample for obtaining be close to the requirement of observation, for example, physics can be carried out by grinding and polish off redundance, or pass through
Acid solution is removing metal level etc., or reactive ion etching (Reactive Ion Etching, RIE) removes dielectric layer etc..
Optionally, the chip to be observed includes substrate and the structure sheaf on the substrate, wherein, the substrate is leaned on
The back side of near or chip to be observed, the structure sheaf is near the front of the chip to be observed, i.e. substrate side
The back side of chip to be observed, the front of chip to be observed is the side that structure sheaf is located on substrate, in a particular embodiment,
The front may include active area and passive region, and passive region includes that metal level, metal interconnection wire layer and the interlayer of alternating deposit is situated between
Matter layer etc., active area includes the structural regions such as source region, drain region and grid region.Optionally, to the chip to be observed front and/or
The back side carries out thinning, obtains first sample including substrate, and the thickness of the substrate is 0～600nm, when region to be observed is on substrate
When on structure sheaf, can remove by substrate portions or all, i.e., the thickness of substrate all be removed to 0, when region to be observed is in substrate
When upper, substrate portions can retain the thickness of such as 600nm after removing, and in order to observe, be located at by region to be observed to be observed
Position in chip retains the thickness of substrate to determine, because substrate has relatively pure inspection surface, institute under transmission electron microscope
With with substrate to observe reference.
Then, as shown in figure 3, a cavity ring 20 is fixed on into the first sample front, the region to be observed 11 is located at institute
State in cavity ring, it is ensured that in cavity ring 20, cavity ring determines to be observed in cavity ring after fixing in region to be observed 11
The position in region, when testing sample is placed, cavity ring is placed down can preferably play a part of support.Optionally, institute
The inner area of cavity ring 20 is stated for 1mm2～4mm2, observation area is preferably determined by the areal extent.Optionally, it is described hollow
Ring 20 is fixed on the first sample front by thermal gels, and thermal gels have heat setting effect, can preferably solidify in high temperature environments, prevents
The sample that only prepares is affected by temperature situations such as cause cavity ring to fix unstable.Optionally, the material of the cavity ring 20
For copper.
Then, the first sample is carried out by dry etching thinning, sample for use in transmitted electron microscope is obtained, optionally, by dry method
Etching the first sample is carried out it is thinning including：The first sample is face-up put into into fast reaction plasma chambers platform
In, it is thinning using quickly going silicon removing process to carry out the first sample, if observation active area then makes first sample by control time
Remaining certain thickness silicon substrate, if other layers carry out reversely successively peeling off again after then silicon substrate is all removed,
Until reach needing the structure sheaf of observation, when copper ring is separated with surrounding structure, now thin area is inside whole copper ring,
Area has reached mm2Rank, that is, realize the effect of large-area transmission electron microscopy observation.
In the method for preparing sample for use in transmitted electron microscope, before the thinning first sample, also include：Measure the first sample substrate
Thickness, so as to carry out follow-up technique according to the thickness of substrate and the regional location of observation.Optionally, by scanning electron microscope
(Scanning Electron Microscope, SEM) measures the thickness of the sample substrate.
In sum, in the method for preparing sample for use in transmitted electron microscope that the present invention is provided, a cavity ring is fixed on thinning
On first sample after process, region to be observed is determined by cavity ring, then by the first sample after thinning described in dry etching, so as to
The sample of suitable transmission electron microscope observation is prepared into, the region to be observed of overlarge area (square millimeter rank) is formed, meets related
Case demand, fills up FAILURE ANALYSIS TECHNOLOGY blank, improves work efficiency.
Foregoing description is only the description to present pre-ferred embodiments, not to any restriction of the scope of the invention, this
Any change, modification that the those of ordinary skill in bright field does according to the disclosure above content, belong to the protection of claims
Scope.
Claims (10)
1. a kind of method for preparing sample for use in transmitted electron microscope, it is characterised in that the method for preparing sample for use in transmitted electron microscope includes：
Chip to be observed is provided, the chip to be observed includes a region to be observed；
The front and/or the back side of the chip to be observed are carried out thinning, obtain first sample；
One cavity ring is fixed on into the first sample front, the region to be observed is located in the cavity ring；
The first sample is carried out by dry etching thinning, obtain sample for use in transmitted electron microscope.
2. the method for preparing sample for use in transmitted electron microscope according to claim 1, it is characterised in that adopt what is ground and/or etch
Mode carries out thinning to the front and/or the back side of the chip to be observed.
3. the method for preparing sample for use in transmitted electron microscope according to claim 1, it is characterised in that by dry etching to described first
Sample carry out it is thinning including：
Being face-up put into the first sample in fast reaction plasma chambers platform, using quickly removing silicon removing process to institute
State first sample carry out it is thinning.
4. the method that sample for use in transmitted electron microscope is prepared according to any one in claims 1 to 3, it is characterised in that the sky
Thimble inner area is 1mm2～4mm2。
5. the method that sample for use in transmitted electron microscope is prepared according to any one in claims 1 to 3, it is characterised in that the sky
Thimble is fixed on the first sample front by thermal gels.
6. the method that sample for use in transmitted electron microscope is prepared according to any one in claims 1 to 3, it is characterised in that the sky
The material of thimble is copper.
7. the method that sample for use in transmitted electron microscope is prepared according to any one in claims 1 to 3, it is characterised in that described to treat
Observation chip includes substrate and the structure sheaf on the substrate, wherein, the substrate near or chip to be observed
The back side, the structure sheaf is near the front of the chip to be observed.
8. the method for preparing sample for use in transmitted electron microscope according to claim 7, it is characterised in that before the thinning first sample,
Also include：Measure the thickness of the first sample substrate.
9. the method for preparing sample for use in transmitted electron microscope according to claim 8, it is characterised in that by described in sweep electron microscopic measure
The thickness of first sample substrate.
10. the method for preparing sample for use in transmitted electron microscope according to claim 7, it is characterised in that to the chip to be observed
Front and/or the back side carry out thinning, obtain first sample including substrate, and the thickness of the substrate is 0～600nm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611170475.0A CN106596225A (en) | 2016-12-16 | 2016-12-16 | Method for preparing transmission electron microscope sample |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611170475.0A CN106596225A (en) | 2016-12-16 | 2016-12-16 | Method for preparing transmission electron microscope sample |
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| CN106596225A true CN106596225A (en) | 2017-04-26 |
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Family Applications (1)
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| CN201611170475.0A Pending CN106596225A (en) | 2016-12-16 | 2016-12-16 | Method for preparing transmission electron microscope sample |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109839296A (en) * | 2017-11-28 | 2019-06-04 | 中国科学院上海微系统与信息技术研究所 | A kind of preparation method of the transmission electron microscope sample for electrical testing in situ |
| CN111982643A (en) * | 2020-07-10 | 2020-11-24 | 安徽工程大学 | Preparation method of transmission electron microscope sample of metal material surface deformation layer |
| CN112444435A (en) * | 2020-11-20 | 2021-03-05 | 国标（北京）检验认证有限公司 | Preparation method of block material planar transmission electron microscope sample |
| CN114813808A (en) * | 2022-04-24 | 2022-07-29 | 胜科纳米(苏州)股份有限公司 | Method for detecting cross-sectional structure of semiconductor chip |
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| CN105973674A (en) * | 2016-07-01 | 2016-09-28 | 中国科学院地质与地球物理研究所 | Preparation method of transmission electron microscope sample with large area of thin region |
| CN106018018A (en) * | 2016-05-13 | 2016-10-12 | 苏州博飞克分析技术服务有限公司 | Novel TEM sample preparation method for analyzing lattice imperfection in failure analysis |
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2016
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Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102455259A (en) * | 2010-10-18 | 2012-05-16 | 武汉新芯集成电路制造有限公司 | Planar transmission electron microscope (TEM) sample preparation method |
| CN103376217A (en) * | 2012-04-23 | 2013-10-30 | 中芯国际集成电路制造(上海)有限公司 | Manufacturing method for accurate positioning of TEM (Transmission Electron Microscope) sample |
| CN103645073A (en) * | 2013-11-22 | 2014-03-19 | 上海华力微电子有限公司 | Method for preparing TEM sample |
| CN106018018A (en) * | 2016-05-13 | 2016-10-12 | 苏州博飞克分析技术服务有限公司 | Novel TEM sample preparation method for analyzing lattice imperfection in failure analysis |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109839296A (en) * | 2017-11-28 | 2019-06-04 | 中国科学院上海微系统与信息技术研究所 | A kind of preparation method of the transmission electron microscope sample for electrical testing in situ |
| CN111982643A (en) * | 2020-07-10 | 2020-11-24 | 安徽工程大学 | Preparation method of transmission electron microscope sample of metal material surface deformation layer |
| CN111982643B (en) * | 2020-07-10 | 2022-07-12 | 安徽工程大学 | Preparation method of transmission electron microscope sample of metal material surface deformation layer |
| CN112444435A (en) * | 2020-11-20 | 2021-03-05 | 国标（北京）检验认证有限公司 | Preparation method of block material planar transmission electron microscope sample |
| CN114813808A (en) * | 2022-04-24 | 2022-07-29 | 胜科纳米(苏州)股份有限公司 | Method for detecting cross-sectional structure of semiconductor chip |
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Application publication date: 20170426 |
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