CN110527988A - Heterojunction solar battery on-line continuous filming equipment and the method for carrying out plated film - Google Patents
Heterojunction solar battery on-line continuous filming equipment and the method for carrying out plated film Download PDFInfo
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- CN110527988A CN110527988A CN201910897422.6A CN201910897422A CN110527988A CN 110527988 A CN110527988 A CN 110527988A CN 201910897422 A CN201910897422 A CN 201910897422A CN 110527988 A CN110527988 A CN 110527988A
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- 238000000034 method Methods 0.000 title claims abstract description 62
- 238000006243 chemical reaction Methods 0.000 claims abstract description 45
- 238000000576 coating method Methods 0.000 claims abstract description 33
- 239000011248 coating agent Substances 0.000 claims abstract description 29
- 230000008569 process Effects 0.000 claims abstract description 27
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 22
- 238000010276 construction Methods 0.000 claims abstract description 19
- 239000000758 substrate Substances 0.000 claims abstract description 12
- 230000008878 coupling Effects 0.000 claims abstract description 10
- 238000010168 coupling process Methods 0.000 claims abstract description 10
- 238000005859 coupling reaction Methods 0.000 claims abstract description 10
- 239000012528 membrane Substances 0.000 claims abstract description 7
- 238000005229 chemical vapour deposition Methods 0.000 claims abstract description 5
- 238000007747 plating Methods 0.000 claims description 19
- 238000005516 engineering process Methods 0.000 claims description 10
- 238000000151 deposition Methods 0.000 claims description 8
- 230000008021 deposition Effects 0.000 claims description 7
- 239000000203 mixture Substances 0.000 claims description 7
- 238000004140 cleaning Methods 0.000 claims description 6
- 238000005520 cutting process Methods 0.000 claims description 6
- VZGDMQKNWNREIO-UHFFFAOYSA-N tetrachloromethane Chemical compound ClC(Cl)(Cl)Cl VZGDMQKNWNREIO-UHFFFAOYSA-N 0.000 claims description 6
- MEYZYGMYMLNUHJ-UHFFFAOYSA-N tunicamycin Natural products CC(C)CCCCCCCCCC=CC(=O)NC1C(O)C(O)C(CC(O)C2OC(C(O)C2O)N3C=CC(=O)NC3=O)OC1OC4OC(CO)C(O)C(O)C4NC(=O)C MEYZYGMYMLNUHJ-UHFFFAOYSA-N 0.000 claims description 6
- 230000005540 biological transmission Effects 0.000 claims description 5
- 229910007264 Si2H6 Inorganic materials 0.000 claims description 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical group [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 3
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052986 germanium hydride Inorganic materials 0.000 claims description 3
- VHHHONWQHHHLTI-UHFFFAOYSA-N hexachloroethane Chemical compound ClC(Cl)(Cl)C(Cl)(Cl)Cl VHHHONWQHHHLTI-UHFFFAOYSA-N 0.000 claims description 3
- 238000002955 isolation Methods 0.000 claims description 3
- 238000010884 ion-beam technique Methods 0.000 claims description 2
- 239000003990 capacitor Substances 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 abstract description 9
- 238000010924 continuous production Methods 0.000 abstract description 3
- 239000002699 waste material Substances 0.000 abstract description 3
- 239000010410 layer Substances 0.000 description 57
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 230000033764 rhythmic process Effects 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/02—Pretreatment of the material to be coated
- C23C16/0227—Pretreatment of the material to be coated by cleaning or etching
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/24—Deposition of silicon only
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/54—Apparatus specially adapted for continuous coating
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Plasma & Fusion (AREA)
- Physics & Mathematics (AREA)
- Inorganic Chemistry (AREA)
- Photovoltaic Devices (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
The invention discloses heterojunction solar battery on-line continuous filming equipment and the methods for carrying out plated film, it include: at least one include ante-chamber, reaction chamber, the coated process chamber of back cavity, sequentially pass through ante-chamber, reaction chamber, the support plate of the placement solar battery of back cavity, velocity interval is 1-500mm/s when support plate passes through reaction chamber, and the capacitance coupling type slab construction for forming amorphous silicon membrane in the substrate surface of solar battery by plasma activated chemical vapour deposition mode is set in reaction chamber, and make the RF/VHF radio-frequency power supply of slab construction rate of connections 1MHz-150MHz, so that reaction chamber can carry out continuous plated film production to substrate, it avoids and vacuumizes, the waste of time caused by vacuum breaker, high production efficiency, when continuous production, multiple support plates carry out plated film continuously across reaction chamber The RF/VHF radio-frequency power supply of operation, above-mentioned slab construction connection is kept it turned on, and avoids the coating quality for frequently opening radio frequency source influence heterojunction solar battery substrate, and quality of forming film is good.
Description
Technical field
The present invention relates to field of vacuum coating, and in particular to heterojunction solar battery on-line continuous filming equipment and progress
The method of plated film.
Background technique
The production technology of present heterojunction solar battery, during i/n/i/p layers of PECVD deposited amorphous silicon, all
It is static plated film mode in batches, for depositing single-layer or multi-layer film layer, plated film is discontinuous, and the rhythm of production equipment is slow, when deposition
Between long, and also with time of vacuum breaker is vacuumized, the starter moment of static plated film, biggish rupture voltage can be generated in batches
The ion of higher-energy, such energetic ion can generate destructiveness to passivation interface, to influence heterojunction solar battery piece
Coating quality.
Summary of the invention
Goal of the invention of the invention is to provide a kind of heterojunction solar battery on-line continuous the shortcomings that overcoming the prior art
Filming equipment and the method for carrying out plated film, when actual production, high production efficiency, quality of forming film is good.
In order to achieve the above objectives, the product in the technical solution adopted by the present invention is that heterojunction solar battery connects online
Continuous filming equipment, comprising:
At least one coated process chamber, the coated process chamber include ante-chamber, reaction chamber, back cavity；
Sequentially pass through the support plate for placing solar battery of the ante-chamber, the reaction chamber, the back cavity；
When the support plate is positioned partially or entirely in the reaction chamber, the velocity interval of the support plate is 0-500mm/s；
Be provided in the reaction chamber for by plasma activated chemical vapour deposition mode the solar battery substrate
Surface forms the capacitance coupling type slab construction of amorphous silicon membrane, and the slab construction is connected with RF/VHF radio-frequency power supply, described
The frequency of radio-frequency power supply is 1MHz-150MHz.
Preferably, the frequency of the radio-frequency power supply is 13MHz-60MHz.
Preferably, the transmission device for driving the support plate to pass through the reaction chamber is provided with below the support plate.
It is further preferred that the speed when support plate is by the reaction chamber is 10mm/s-100mm/s.
Preferably, the heterojunction solar battery on-line continuous filming equipment has on-line coating technology pattern or online
Cleaning process mode, when the heterojunction solar battery on-line continuous filming equipment is in on-line coating technology pattern, institute
Stating the gas being passed through in reaction chamber is SiH4、Si2H6、H2、N2、CH4、C2H2、C2H4、C2H6、CO2、O2、O3、N2O、NH3、 C3H9B、
C6H15BO3、C5H15O4P、C8H20O4Si、B2H6、BF3、PH3、BH3、GeH4Or mixtures thereof at least one of；Described heterogeneous
When joint solar cell on-line continuous filming equipment is in on-line cleaning technology pattern, the gas being passed through in the reaction chamber is
NF3、CF4、SF6、C2F6、F2, Cl2, Ar, N2、CO2、O2、CCl4、C2Cl6、C3F8Or mixtures thereof at least one of.
Preferably, the reaction chamber is made of at least two subregions, and the piecewise connection has plasma source, the reaction
At least one in chamber contains the subregion of capacitance coupling type slab construction.
It is further preferred that the plasma of at least one piecewise connection with capacitance coupling type slab construction
Body source is RF/VHF radio-frequency power supply, and the plasma source of remaining piecewise connection is RF/VHF radio-frequency power supply, microwave source, electronics
Cyclotron resonance source, ICP plasma source, electron beam source, ion beam source, direct discharge plasma source, remote plasma source
In any one or at least two combination.
Preferably, when the quantity of the coated process chamber is two or more, two coated process chambers it
Between by being attached for the separate cavities at interval, or be directly attached.
It is further preferred that the joint of the separate cavities and the coated process chamber is provided with for completely cutting off the plated film
The valve of work indoor gas.
It is further preferred that the heterojunction solar battery on-line continuous filming equipment further includes for completely cutting off atmosphere
Loading chamaer and unloading chamber, the loading chamaer are connected to the leading flank of front end technique coating chamber, and the unloading chamber is connected to finally
The trailing flank of technique coating chamber is held, the loading chamaer, the technique coating chamber, the unloading chamber arrange from front to back.
In order to achieve the above objectives, the method in the technical solution adopted by the present invention is to use any one of the above hetero-junctions
The method of solar battery on-line continuous filming equipment progress plated film, it is characterised in that:
The front and back sides of solar battery are coated with amorphous silicon film layer, the amorphous silicon film layer includes nearly the face n i layers, the face p i layers nearly, n-layer,
P layers, the plated film sequence of the amorphous silicon film layer are as follows:
The nearly i layers → n in the face the n → nearly i layers → p in the face p,
Nearly i layers of the face the n → nearly i layers → n → p in the face p,
Nearly i layers of the face the n → nearly i layers → p → n in the face p,
The nearly i layers → p in the face the p → nearly i layers → n in the face n,
Nearly i layers of the face the p → nearly i layers → p → n in the face n,
Nearly i layers of the face the p → nearly i layers → n → p in the face n.
Preferably, in the amorphous silicon film layer, any one tunic passes through an at least heterojunction solar battery
On-line continuous filming equipment deposition is completed.
Preferably, any one heterojunction solar battery on-line continuous filming equipment at least completes the amorphous silicon
The deposition of a tunic in film layer.
Preferably, it plating between p layers and plating n-layer, plating between nearly the face p i layers and plating n-layer, plating nearly the face n i layers and p layers of plating
Between need replacing the support plate.
Due to the application of the above technical scheme, technical solution of the present invention has the advantage that compared with prior art
By making the support plate for placing solar battery pass through reaction chamber, and it is arranged in reaction chamber for passing through plasma chemistry
Vapor deposition mode forms the capacitance coupling type slab construction of amorphous silicon membrane in the substrate surface of solar battery, and makes plate
Structure rate of connections is the RF/VHF radio-frequency power supply of 1MHz-150MHz, so that reaction chamber can carry out continuous plated film life to substrate
Produce, avoid vacuumize, the waste of time caused by vacuum breaker, high production efficiency, when continuous production, multiple support plates are continued to pass through instead
Chamber is answered to carry out plated film operation, the RF/VHF radio-frequency power supply of above-mentioned slab construction connection is kept it turned on, and avoids frequent unlatching
Radio frequency source influences the coating quality of heterojunction solar battery substrate, and quality of forming film is good.
Detailed description of the invention
Attached drawing 1 is the schematic diagram of embodiment one in the present invention；
Attached drawing 2 is the schematic diagram of embodiment two in the present invention；
Attached drawing 3 is the schematic diagram of embodiment three in the present invention；
Wherein: 100. support plates；101. silicon wafer；102. transmission device；200. loading chamaer；300,310,320,330. coating process
Room；301,311,321,331. ante-chamber；302,312,322,332. reaction chamber；303,313,323,333. back cavity；400,410,
420. separate cavities；500, chamber is unloaded；600, valve；700,710,720,730. process gas pipeline；800,810,820,830.
Slab construction；900,910,920,930. radio-frequency power supply.
Specific embodiment
The preferred embodiments of the present invention will be described in detail with reference to the accompanying drawing, so that advantages and features of the invention are more
It is easy to be readily appreciated by one skilled in the art, apparent is explicitly defined to be made to protection scope of the present invention.
The front and rear direction that the present invention describes refers to that the upper and lower direction in Fig. 1, the left and right direction that the present invention describes refer to figure
Upper and lower direction in 1.
Embodiment one:
As shown in Figure 1, heterojunction solar battery on-line continuous filming equipment provided by the invention, comprising: from left to right successively
The loading chamaer 200 of connection, coated process chamber 300, separate cavities 400, coated process chamber 310, unloading chamber 500, wherein loading chamaer
200, coated process chamber 300, separate cavities 400, coated process chamber 310, unloading chamber 500 between be provided with valve 600, valve
600 for completely cutting off the gas in coated process chamber 300,310, and coated process chamber 300 is identical with 310 structure of coated process chamber, under
Face is illustrated by taking technique coating chamber 300 as an example, and technique coating chamber 300 includes the ante-chamber 301 being sequentially communicated from left to right, reaction
Chamber 302, back cavity 303, support plate 100 load the support plate 100 of silicon wafer 101 from left to right successively for placing silicon wafer 101 to be coated
It is completed across loading chamaer 200, ante-chamber 301, reaction chamber 302, back cavity 303, separate cavities 400, coated process chamber 310, unloading chamber 500
Coating process is provided with the transmission device 102 for driving support plate 100 to pass through above-mentioned chamber, transmission device below support plate 100
102 are made of several rotatable roll shafts, when support plate 100 is positioned partially or entirely in the reaction chamber 302, the speed of support plate 100
Degree range is 0-500mm/s, and the speed that support plate 100 passes through reaction chamber 302 is preferably 10mm/s-100mm/s, in reaction chamber 302
It is additionally provided with the slab construction 800 of capacitance coupling type, which is connected with RF/VHF radio-frequency power supply 900, for passing through
Plasma activated chemical vapour deposition mode forms amorphous silicon membrane in the substrate surface of silicon wafer 101, and the frequency of radio-frequency power supply 900 is
1MHz-150MHz, it is preferable that the frequency of radio-frequency power supply 900 is 13MHz-60MHz, and reaction chamber 302 is also connected with to reaction chamber
The process gas pipeline 700 of process gas is passed through in 302, the heterojunction solar battery on-line continuous filming equipment has
Line coating process mode or on-line cleaning technology pattern are in the heterojunction solar battery on-line continuous filming equipment
When line coating process mode, the process gas being passed through in reaction chamber 302 is SiH4、Si2H6、H2、N2、CH4、C2H2、C2H4、C2H6、
CO2、O2、O3、N2O、NH3、 C3H9B、C6H15BO3、C5H15O4P、C8H20O4Si、B2H6、BF3、PH3、BH3、GeH4At least one of
Or mixtures thereof, in the present embodiment, the process gas being passed through is SiH4And H2Mixture；In the heterojunction solar electricity
When pond on-line continuous filming equipment is in on-line cleaning technology pattern, the gas being passed through in reaction chamber 302 is NF3、CF4、SF6、
C2F6、F2, Cl2, Ar, N2、CO2、O2、CCl4、C2Cl6、C3F8Or mixtures thereof at least one of, in the present embodiment, it is passed through
Process gas be NF3；Separate cavities 400 are provided between technique coating chamber 300 and technique coating chamber 310, separate cavities 400 are used for
Technique coating chamber 300 and technique coating chamber 310 are spaced apart, the left and right sides and the coated process chamber 300,310 of separate cavities 400
Joint is provided with the valve 600 for completely cutting off gas in plated film operating room 300,310, and loading chamaer 200 is connected to technique plated film
The leading flank of room 300, loading chamaer 200 are used to unloading chamber 500 and being connected to technique plated film technique coating chamber 300 and atmospheric isolation
The trailing flank of room 310, unloading chamber 500 are used for technique coating chamber 310 and atmospheric isolation, loading chamaer 200, technique coating chamber 300,
Separate cavities 400, technique coating chamber 310, unloading chamber 500 arrange from front to back.
Embodiment two:
It is basically the same as the first embodiment, is only provided with cushion chamber from left to right between technique coating chamber 310 and unloading chamber 500
410 and technique coating chamber 320.
Embodiment three:
It is essentially identical with embodiment two, it is only provided with cushion chamber from left to right between technique coating chamber 320 and unloading chamber 500
420 and technique coating chamber 330.
Capacitance coupling type in above-described embodiment, when support plate 100 passes through reaction chamber 302,312, in reaction chamber 302,312
The RF/VHF radio-frequency power supply 900,910 that slab construction 800,810 connects is kept it turned on.
Using heterojunction solar battery on-line continuous filming equipment described in any one of the above embodiment to hetero-junctions
The method of solar battery progress plated film, it is characterised in that:
The front and back sides of solar battery are coated with amorphous silicon film layer, the amorphous silicon film layer includes nearly the face n i layers, the face p i layers nearly, n-layer,
P layers, the plated film sequence of the amorphous silicon film layer are as follows:
The nearly i layers → n in the face the n → nearly i layers → p in the face p,
Nearly i layers of the face the n → nearly i layers → n → p in the face p,
Nearly i layers of the face the n → nearly i layers → p → n in the face p,
The nearly i layers → p in the face the p → nearly i layers → n in the face n,
Nearly i layers of the face the p → nearly i layers → p → n in the face n,
Nearly i layers of the face the p → nearly i layers → n → p in the face n.
Preferably, in the amorphous silicon film layer, any one tunic passes through an at least heterojunction solar battery
On-line continuous filming equipment deposition is completed.
Preferably, any one heterojunction solar battery on-line continuous filming equipment at least completes the amorphous silicon
The deposition of a tunic in film layer.
Preferably, it plating between p layers and plating n-layer, plating between nearly the face p i layers and plating n-layer, plating nearly the face n i layers and p layers of plating
Between need replacing the support plate.
By making the support plate for placing solar battery pass through reaction chamber, and it is arranged in reaction chamber for passing through plasma
Chemical vapor deposition manner forms the capacitance coupling type slab construction of amorphous silicon membrane in the substrate surface of solar battery, and makes
Slab construction connects RF/VHF radio-frequency power supply so that reaction chamber can carry out continuous plated film production to substrate, avoid vacuumize,
The waste of time caused by vacuum breaker, high production efficiency, when continuous production, multiple support plates continue to pass through reaction chamber and carry out plated film work
The RF/VHF radio-frequency power supply of industry, above-mentioned slab construction connection is kept it turned on, and it is heterogeneous to avoid frequently unlatching radio frequency source influence
The coating quality of joint solar cell substrate, quality of forming film are good.
The above embodiments merely illustrate the technical concept and features of the present invention, and its object is to allow person skilled in the art
Scholar cans understand the content of the present invention and implement it accordingly, and it is not intended to limit the scope of the present invention, it is all according to the present invention
Equivalent change or modification made by Spirit Essence, should be covered by the protection scope of the present invention.
Claims (14)
1. heterojunction solar battery on-line continuous filming equipment, comprising:
At least one coated process chamber, the coated process chamber include ante-chamber, reaction chamber, back cavity；
Sequentially pass through the support plate for placing solar battery of the ante-chamber, the reaction chamber, the back cavity；
It is characterized by:
When the support plate is positioned partially or entirely in the reaction chamber, the velocity interval of the support plate is 0-500mm/s；
Be provided in the reaction chamber for by plasma activated chemical vapour deposition mode the solar battery substrate
Surface forms the capacitance coupling type slab construction of amorphous silicon membrane, and the slab construction is connected with RF/VHF radio-frequency power supply, described
The frequency of radio-frequency power supply is 1MHz-150MHz.
2. heterojunction solar battery on-line continuous filming equipment according to claim 1, it is characterised in that: the radio frequency
The frequency of power supply is 13MHz-60MHz.
3. heterojunction solar battery on-line continuous filming equipment according to claim 1, it is characterised in that: the support plate
Lower section is provided with the transmission device for driving the support plate to pass through the reaction chamber.
4. heterojunction solar battery on-line continuous filming equipment according to claim 1, it is characterised in that: the support plate
Speed when across the reaction chamber is 10mm/s-100mm/s.
5. heterojunction solar battery on-line continuous filming equipment according to claim 1, it is characterised in that: described heterogeneous
Joint solar cell on-line continuous filming equipment has on-line coating technology pattern or on-line cleaning technology pattern, described heterogeneous
When joint solar cell on-line continuous filming equipment is in on-line coating technology pattern, the gas being passed through in the reaction chamber is
SiH4、Si2H6、H2、N2、CH4、C2H2、C2H4、C2H6、CO2、O2、O3、N2O、NH3、 C3H9B、C6H15BO3、C5H15O4P、
C8H20O4Si、B2H6、BF3、PH3、BH3、GeH4Or mixtures thereof at least one of；It is online in the heterojunction solar battery
When continuous coating device is in on-line cleaning technology pattern, the gas being passed through in the reaction chamber is NF3、CF4、SF6、C2F6、F2,
Cl2, Ar, N2、CO2、O2、CCl4、C2Cl6、C3F8Or mixtures thereof at least one of.
6. heterojunction solar battery on-line continuous filming equipment according to claim 1, it is characterised in that: the reaction
Chamber is made of at least two subregions, and the piecewise connection has a plasma source, at least one in the reaction chamber contains capacitor
The subregion of manifold type slab construction.
7. heterojunction solar battery on-line continuous filming equipment according to claim 6, it is characterised in that: at least one
The plasma source of the piecewise connection with capacitance coupling type slab construction is RF/VHF radio-frequency power supply, remaining subregion
The plasma source of connection is RF/VHF radio-frequency power supply, microwave source, electron cyclotron resonace source, ICP plasma source, electronics
Electron gun, ion beam source, direct discharge plasma source, in remote plasma source any one or at least two combination.
8. heterojunction solar battery on-line continuous filming equipment according to claim 1, it is characterised in that: in the plating
When the quantity of membrane process room is two or more, between two coated process chambers by the separate cavities for interval into
Row connection, or be directly attached.
9. heterojunction solar battery on-line continuous filming equipment according to claim 8, it is characterised in that: the isolation
The joint of chamber and the coated process chamber is provided with the valve for completely cutting off the plated film work indoor gas.
10. heterojunction solar battery on-line continuous filming equipment according to claim 1, it is characterised in that: described different
Matter joint solar cell on-line continuous filming equipment further includes for completely cutting off the loading chamaer of atmosphere and unloading chamber, and the loading chamaer connects
The leading flank in front end technique coating chamber is connect, the unloading chamber is connected to the trailing flank of rearmost end technique coating chamber, the dress
Chamber, the technique coating chamber, the unloading chamber is carried to arrange from front to back.
11. being plated using heterojunction solar battery on-line continuous filming equipment described in any one in claim 1-10
The method of film, it is characterised in that:
The front and back sides of solar battery are coated with amorphous silicon film layer, the amorphous silicon film layer includes nearly the face n i layers, the face p i layers nearly, n-layer,
P layers, the plated film sequence of the amorphous silicon film layer are as follows:
The nearly i layers → n in the face the n → nearly i layers → p in the face p,
Nearly i layers of the face the n → nearly i layers → n → p in the face p,
Nearly i layers of the face the n → nearly i layers → p → n in the face p,
The nearly i layers → p in the face the p → nearly i layers → n in the face n,
Nearly i layers of the face the p → nearly i layers → p → n in the face n,
Nearly i layers of the face the p → nearly i layers → n → p in the face n.
12. the method according to claim 11 for carrying out plated film, it is characterised in that: any one in the amorphous silicon film layer
Tunic, which passes through an at least heterojunction solar battery on-line continuous filming equipment deposition, to be completed.
13. the method according to claim 11 for carrying out plated film, it is characterised in that: any one heterojunction solar
Battery on-line continuous filming equipment at least completes the deposition of the tunic in the amorphous silicon film layer.
14. the method according to claim 11 for carrying out plated film, it is characterised in that: between p layers of plating and plating n-layer, plating
The support plate is needed replacing between p layers plating between i layer of the nearly face p and plating n-layer, plating nearly the face n i layers.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111172518A (en) * | 2020-01-19 | 2020-05-19 | 江苏杰太光电技术有限公司 | Integrated film coating method based on silane |
| CN111739971A (en) * | 2020-08-03 | 2020-10-02 | 苏州迈正科技有限公司 | Film coating equipment, method and system, solar cell, assembly and power generation system |
| CN112002631A (en) * | 2020-01-19 | 2020-11-27 | 江苏杰太光电技术有限公司 | Plate type integrated film coating method and device for passivation contact solar cell |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000182964A (en) * | 1998-12-15 | 2000-06-30 | Canon Inc | Method and apparatus for forming deposited film |
| US6488995B1 (en) * | 1998-02-17 | 2002-12-03 | Canon Kabushiki Kaisha | Method of forming microcrystalline silicon film, method of fabricating photovoltaic cell using said method, and photovoltaic device fabricated thereby |
| JP2003173980A (en) * | 2001-09-26 | 2003-06-20 | Kyocera Corp | Heat catalyst-containing cathode type pecvd apparatus, photoelectric transducer manufactured by using the same as well as its manufacturing method, heat catalyst- containing cathode type pecvd method, cvd apparatus using the same, film formed by the same method and device formed by using the same film |
| CN102456595A (en) * | 2010-10-26 | 2012-05-16 | 上海凯世通半导体有限公司 | Vacuum transmission processing equipment and method |
| CN102725439A (en) * | 2010-01-04 | 2012-10-10 | 德国罗特·劳股份有限公司 | Inline coating installation |
| JP2013118351A (en) * | 2011-10-31 | 2013-06-13 | Mitsubishi Electric Corp | Manufacturing apparatus for solar cell, solar cell, and manufacturing method for solar cell |
| CN109980042A (en) * | 2018-12-19 | 2019-07-05 | 黄剑鸣 | HIT heterojunction solar battery manufacturing equipment |
| CN210683938U (en) * | 2019-09-23 | 2020-06-05 | 苏州迈正科技有限公司 | Online continuous coating equipment for heterojunction solar cell |
-
2019
- 2019-09-23 CN CN201910897422.6A patent/CN110527988A/en active Pending
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6488995B1 (en) * | 1998-02-17 | 2002-12-03 | Canon Kabushiki Kaisha | Method of forming microcrystalline silicon film, method of fabricating photovoltaic cell using said method, and photovoltaic device fabricated thereby |
| JP2000182964A (en) * | 1998-12-15 | 2000-06-30 | Canon Inc | Method and apparatus for forming deposited film |
| JP2003173980A (en) * | 2001-09-26 | 2003-06-20 | Kyocera Corp | Heat catalyst-containing cathode type pecvd apparatus, photoelectric transducer manufactured by using the same as well as its manufacturing method, heat catalyst- containing cathode type pecvd method, cvd apparatus using the same, film formed by the same method and device formed by using the same film |
| CN102725439A (en) * | 2010-01-04 | 2012-10-10 | 德国罗特·劳股份有限公司 | Inline coating installation |
| CN102456595A (en) * | 2010-10-26 | 2012-05-16 | 上海凯世通半导体有限公司 | Vacuum transmission processing equipment and method |
| JP2013118351A (en) * | 2011-10-31 | 2013-06-13 | Mitsubishi Electric Corp | Manufacturing apparatus for solar cell, solar cell, and manufacturing method for solar cell |
| CN109980042A (en) * | 2018-12-19 | 2019-07-05 | 黄剑鸣 | HIT heterojunction solar battery manufacturing equipment |
| CN210683938U (en) * | 2019-09-23 | 2020-06-05 | 苏州迈正科技有限公司 | Online continuous coating equipment for heterojunction solar cell |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111172518A (en) * | 2020-01-19 | 2020-05-19 | 江苏杰太光电技术有限公司 | Integrated film coating method based on silane |
| CN112002631A (en) * | 2020-01-19 | 2020-11-27 | 江苏杰太光电技术有限公司 | Plate type integrated film coating method and device for passivation contact solar cell |
| CN111739971A (en) * | 2020-08-03 | 2020-10-02 | 苏州迈正科技有限公司 | Film coating equipment, method and system, solar cell, assembly and power generation system |
| CN111739971B (en) * | 2020-08-03 | 2021-02-19 | 苏州迈正科技有限公司 | Film coating equipment, method and system, solar cell, assembly and power generation system |
| WO2022027994A1 (en) | 2020-08-03 | 2022-02-10 | 苏州迈正科技有限公司 | Coating apparatus, method and system, solar cell, module, and power generation system |
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