CN110518054A - Display device and its manufacturing method - Google Patents

Display device and its manufacturing method Download PDF

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Publication number
CN110518054A
CN110518054A CN201910831858.5A CN201910831858A CN110518054A CN 110518054 A CN110518054 A CN 110518054A CN 201910831858 A CN201910831858 A CN 201910831858A CN 110518054 A CN110518054 A CN 110518054A
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CN
China
Prior art keywords
substrate
driving element
display panel
connecting line
adhesion coating
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Granted
Application number
CN201910831858.5A
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Chinese (zh)
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CN110518054B (en
Inventor
柯聪盈
徐理智
许雅婷
薛芷苓
陈勇志
胡克龙
王万仓
刘俊欣
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AU Optronics Corp
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AU Optronics Corp
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Publication of CN110518054A publication Critical patent/CN110518054A/en
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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10OLED displays
    • H10K59/12Active-matrix OLED [AMOLED] displays
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10OLED displays
    • H10K59/12Active-matrix OLED [AMOLED] displays
    • H10K59/127Active-matrix OLED [AMOLED] displays comprising two substrates, e.g. display comprising OLED array and TFT driving circuitry on different substrates
    • H10K59/1275Electrical connections of the two substrates

Abstract

A kind of manufacturing method of display device, includes the following steps.Display panel is formed, wherein display panel has the display surface being arranged oppositely and the back side.Driving element substrate is formed, wherein driving element substrate includes the first substrate and driving element, and driving element is configured on the first surface of the first substrate.It is bonded the back side of display panel and the second surface of the first substrate of driving element substrate each other by adhesion coating, wherein first surface is arranged oppositely with second surface.Display panel is set to be electrically connected to each other with driving element.

Description

Display device and its manufacturing method
Technical field
The present invention relates to a kind of display device and its manufacturing methods, and in particular to a kind of achievable narrow frame or Rimless Display device and its manufacturing method.
Background technique
As scientific and technological industry is increasingly flourishing, e.g. mobile phone (mobile phone), tablet computer (tablet Computer) or the display devices such as e-book (eBook) are widely used in daily life in recent years.In addition to display device Except the display performances such as resolution ratio, comparison, visual angle, requirement of the consumer for the aesthetic appearance of display device is increasingly promoted.One As for, the frame of non-display area be considered as influence display device aesthetic appearance an important factor for one of.Therefore, how The width for not influencing to reduce in the case where display performance frame has become the important topic of this field.
Summary of the invention
One embodiment of the present invention provides a kind of display device and its manufacturing method, it can be achieved that narrow frame or Rimless Target.
The manufacturing method of the display device of one embodiment of the present invention includes the following steps.Display panel is formed, wherein Display panel has the display surface being arranged oppositely and the back side.The driving element substrate including the first substrate and driving element is formed, Wherein driving element is configured on the first surface of the first substrate.Make the back side and the driving element base of display panel by adhesion coating The second surface of first substrate of plate is bonded each other, and wherein first surface is arranged oppositely with second surface.Make display panel and drives Dynamic element is electrically connected to each other.
The display device of one embodiment of the present invention includes display panel, driving element substrate and adhesion coating.Driving Device substrate is configured on display panel, and wherein driving element substrate includes the first substrate and driving element, and driving element is matched It is placed in the first substrate, and driving element and display panel are electrically connected.Adhesion coating is configured at display panel and driving element base Between first substrate of plate.
Manufacturing method based on above-mentioned, of the invention display device is the following steps are included: being formed includes the of the first substrate It is configured with the driving element substrate of driving element on one surface, the back side and the driving element substrate of display panel are made by adhesion coating The second surface of the first substrate be bonded each other, and display panel is made to be electrically connected to each other with driving element, shows dress whereby Set the target of achievable narrow frame or Rimless.
To make the foregoing features and advantages of the present invention clearer and more comprehensible, embodiment is cited below particularly, and cooperates specification Attached drawing is described in detail below.
Detailed description of the invention
Figure 1A to Fig. 1 E is the diagrammatic cross-section according to the manufacturing process of the display device of one embodiment of the present invention.
Fig. 2 is the top view of the driving element substrate of Fig. 1 C.
Fig. 3 A to Fig. 3 D is the diagrammatic cross-section according to the manufacturing process of the display device of another embodiment of the present invention.
Description of symbols:
10,20: display device
100,400: display panel
102: buffer layer
110: support plate
120: release layer
200: driving element substrate
202,402: substrate
202a, 202b: surface
210: driving element
300: adhesion coating
A1, A2: lower electrode
ACF: anisotropy conductive layer
BS, 4BS: the back side
C: top electrode
CL1, CL2, CL3, CL4, CL5, CL6, CL7, CL8, CL9, CL10: connecting line
CP1, CP2, CP3, CP4: conductive pattern
CR1, CR2: channel region
CS1, CS2, CS3, CS4: connection structure
D1, D2: drain electrode
DR1, DR2: drain region
DS, 4DS: display surface
E1, E2: luminescent layer
F: encapsulated layer
G1, G2: grid
GI: gate insulation layer
H1, H2, H3, H4, H5, H6: contact hole
IL1, IL2: interlayer insulating film
N1, n2: normal direction
O1, O2: display element
P1, P2, P3, P4, P5, P6, P7, P8: connection pad
PDL: pixel defining layer
PL: flatness layer
V1, V2, V3, V4, V5, V6: opening
S1, S2: source electrode
SC1, SC2: semiconductor layer
SL1, SL2: signal wire
SR1, SR2: source area
T1, T2: active member
X1, X2: convex block
Specific embodiment
Herein, the range indicated by " numerical value to another numerical value ", is that one kind avoids enumerating in the description The summary representation of all numerical value in the range.Therefore, the record of a certain special value range, covers the numberical range Interior any number and the relatively fractional value range defined by any number in the numberical range, as bright in the description Text writes out any number as should be compared with fractional value range.
" about " used herein, " approximation ", " substantially " or " substantial " includes described value and in ordinary skill Average value in the acceptable deviation range for the particular value that personnel determine, it is contemplated that the measurement that is discussed and relevant to measurement The specific quantity (that is, limitation of measuring system) of error.For example, " about " can indicate one or more standard deviations in described value In difference, or in such as ± 30%, ± 20%, ± 15%, ± 10%, ± 5%.Furthermore " about " used herein, " approximation ", " this In matter " or " substantial " can be according to measurement property, cutting property or other properties, to select more acceptable deviation range or mark Quasi- deviation, and a standard deviation can not had to and be applicable in whole properties.
In the accompanying drawings, for the sake of clarity, it is exaggerated the thickness in layer, film, panel, region etc..It should be appreciated that ought be such as Layer, film, region or substrate element be referred to as at another element "upper" or " being connected to " another element, can be directly another It is connect on one element or with another element or intermediary element can be there is also.On the contrary, when element is referred to as " directly another On element " or when " being directly connected to " another element, intermediary element is not present.As it is used herein, " connection " can refer to object Reason and/or electric connection.Furthermore " electric connection " can there are other elements between two element.
Unless otherwise defined, all terms (including technical and scientific term) used herein have leads with belonging to the present invention The normally understood identical meaning of the those of ordinary skill in domain.It will be further appreciated that such as in usually used dictionary Those of definition term should be interpreted as having and their meanings in the relevant technologies and context of the invention are consistent Meaning, and will not be interpreted Utopian or excessively formal meaning, unless clearly definition so herein.
Figure 1A to Fig. 1 E is the diagrammatic cross-section according to the manufacturing process of the display device of one embodiment of the present invention.Figure 2 be the top view of the driving element substrate of Fig. 1 C.It is worth noting that, the profile position of Fig. 1 C can refer to the hatching line I- in Fig. 2 The position of I '.
Figure 1A is please referred to, firstly, in forming release layer 120 on support plate 110.In the present embodiment, support plate 110 can pass through Release layer 120 and separated with film layer formed in subsequent process steps.In other words, in the present embodiment, support plate 110 is for example It is the temporary carrier to carry film layer formed in subsequent process steps.In the present embodiment, the material of support plate 110 can Including glass, quartz, polyesters, polycarbonate-based or other materials for having certain rigidity.In the present embodiment, release layer 120 material may include hydrophobic material, for example, silicon fluoride (fluorosilane), Parylene (parylene), metal or The oxide of the metal, wherein the metal be, for example, titanium (Ti), aluminium (Al), silver-colored (Ag), iron (Fe), nickel (Ni), molybdenum (Mo), Tungsten (W).
Then, in sequentially forming a plurality of connecting line CL1~CL2, buffer layer 102 and multiple active members on release layer 120 T1~T2.In the present embodiment, the method for connecting line CL1~CL2 is formed for example including one of traditional Lithography Etching technique (Photolithography and Etching Process, PEP).Considering based on electric conductivity, connecting line CL1~CL2 mono- As be using metal material.However, the present invention is not limited thereto, according to other embodiments, connecting line CL1~CL2 can also be with Using such as nitride of alloy, metal material, the oxide of metal material, metal material nitrogen oxides, other are nonmetallic But have the material of conductive characteristic or the stack layer of metal material and previous materials.
In the present embodiment, buffer layer 102 covers connecting line CL1~CL2.In the present embodiment, buffer layer 102 Forming method may include physical vaporous deposition or chemical vapour deposition technique.In addition, in the present embodiment, buffer layer 102 Material can include: inorganic material (such as: silica, silicon nitride, silicon oxynitride or above-mentioned at least two kinds materials stack layer), Organic material (such as: polyimides system resins, epoxy system resin or acryl system resin) or combinations of the above, but the present invention It is not limited.In the present embodiment, buffer layer 102 is single layer structure, but the present invention is not limited thereto.In other embodiment party In formula, buffer layer 102 can also be multilayered structure.
In the present embodiment, formed active member T1~T2 method can comprise the following steps that on buffer layer 102 according to Sequence forms semiconductor layer SC1~SC2, gate insulation layer GI, 1~G2 of grid G, interlayer insulating film IL1,1~S2 of source S and drain D 1 ~D2, wherein semiconductor layer SC1 is included the source area SR1 that can be formed with grid G 1 for mask progress ion doping technique, leaked In be overlapped on the normal direction n1 of support plate 110, source S 1 passes through by polar region DR1 and channel region CR1, grid G 1 and channel region CR1 It is formed in gate insulation layer GI to be electrically connected with the contact hole H1 and source area SR1 in interlayer insulating film IL1, drain D 1 passes through to be formed It is electrically connected in gate insulation layer GI with the contact hole H2 and drain region DR1 in interlayer insulating film IL1, semiconductor layer SC2 includes can Source area SR2, drain region DR2 and the channel region CR2 for being mask progress ion doping technique with grid G 2 and being formed, grid G 2 With channel region CR2 in be overlapped on the normal direction n1 of support plate 110, source S 2 is by being formed in gate insulation layer GI and interlayer insulating film Contact hole H3 and source area SR2 in IL1 are electrically connected, and drain D 2 is by being formed in gate insulation layer GI and interlayer insulating film IL1 In contact hole H4 and drain region DR2 be electrically connected, but the present invention is not limited thereto.
In the present embodiment, semiconductor layer SC1~SC2, gate insulation layer GI, 1~G2 of grid G, interlayer insulating film IL1, 1~S2 of source S and 1~D2 of drain D can be used for display panel as well known to technical staff in any technical field respectively Any semiconductor layer, any gate insulation layer, any grid, any interlayer insulating film, any source electrode and it is any drain electrode to realize, Therefore about semiconductor layer SC1~SC2, gate insulation layer GI, 1~G2 of grid G, interlayer insulating film IL1,1~S2 of source S and drain D 1 The ground such as the material and generation type of~D2 are described in this and will not be repeated here.
In the present embodiment, active member T1~T2 can be technical staff institute week in any technical field respectively Any thin film transistor (TFT) known, such as low-temperature polysilicon film transistor (Low Temperature Poly-Silicon Thin Film Transistor, LTPS TFT), it is amorphous silicon film transistor (Amorphous Silicon TFT, a-Si TFT), micro- Polycrystal silicon film transistor (micro-Si TFT) or MOS transistor (Metal Oxide Transistor).In addition, In the present embodiment, active member T1~T2 belongs to top gate-type thin film transistor, however, the present invention is not limited thereto.At other In embodiment, active member T1~T2 can belong to bottom grid film transistor.
In the present embodiment, during the technique for forming 1~S2 of source S and 1~D2 of drain D, letter also it has been formed simultaneously Number line SL1~SL2 and connection structure CS1~CS2, wherein connection structure CS1 is located at buffer layer 102, gate insulation layer GI and interlayer It is directly connected in insulating layer IL1 and with connecting line CL1, signal wire SL1 is directly connected in connection structure CS1's and active member T1 Source S 1, connection structure CS2 are located in buffer layer 102, gate insulation layer GI and interlayer insulating film IL1 and direct with connecting line CL2 Connection, signal wire SL2 is directly connected in the source S 2 of connection structure CS2 and active member T2, but the present invention is not limited thereto.From For another viewpoint, in the present embodiment, active member T1 can via connection structure CS1 and signal wire SL1 and and connecting line CL1 is electrically connected, and active member T2 can be electrically connected via connection structure CS2 and signal wire SL2 with connecting line CL2.At this In embodiment, though signal wire SL1~SL2 is illustrated by taking data line as an example, the present invention is not limited thereto.In other realities It applies in mode, signal wire SL1~SL2 can be scan line, and signal wire SL1 is electrically connected at connection structure CS1 and active at this time The grid G 1 of element T1, and signal wire SL2 is electrically connected at the grid G 2 of connection structure CS2 and active member T2.
Then, in the interlayer insulating film IL2 and flatness layer PL that sequentially form covering active member T1~T2 on buffer layer 102 Afterwards, in forming lower 1~A2 of electrode A, luminescent layer E1~E2, top electrode C and pixel defining layer PDL on flatness layer PL, wherein lower electricity Pole A1 is electrically connected by the drain D 1 for the contact hole H5 and active member T1 being formed in interlayer insulating film IL2 and flatness layer PL It connects, luminescent layer E1 is configured between lower electrode A 1 and top electrode C and is formed in the opening V1 of pixel defining layer PDL, lower electrode A2 is electrically connected by the drain D 2 of the contact hole H6 and active member T2 that are formed in interlayer insulating film IL2 and flatness layer PL, Luminescent layer E2 is configured between lower electrode A 2 and top electrode C and is formed in the opening V2 of pixel defining layer PDL, but the present invention is simultaneously It is without being limited thereto.In the present embodiment, interlayer insulating film IL2, flatness layer PL, lower 1~A2 of electrode A, luminescent layer E1~EL2, on Electrode C and pixel defining layer PDL respectively can be as well known to technical staff in any technical field for display panel Any interlayer insulating film, any flatness layer, any lower electrode, any luminescent layer, any top electrode and any pixel definition layer come It realizes, thus it is fixed about interlayer insulating film IL2, flatness layer PL, lower 1~A2 of electrode A, luminescent layer E1~EL2, top electrode C and pixel The material of adopted layer PDL and forming method etc. are described in this and will not be repeated here.
In the present embodiment, luminescent layer E1, lower electrode A 1 in part Chong Die with luminescent layer E1 on normal direction n1, with And top electrode C on normal direction n1 with luminescent layer E1 overlapping part together with constitute display element O1, luminescent layer E2, lower electrode A2 is in part Chong Die with luminescent layer E2 on normal direction n1 and top electrode C in Chong Die with luminescent layer E2 on normal direction n1 Part constitute display element O2 together.In the present embodiment, display element O1 can be driven by active member T1 and issue light, Display element O2 can be driven by active member T2 and issue light.Specifically, display element O1 be by luminescent layer E1 under The voltage difference generated between electrode A 1 and top electrode C drives and issues light, and display element O2 is by luminescent layer E2 via lower electrode The voltage difference generated between A2 and top electrode C drives and issues light.For example, it when luminescent layer E1 is red light emitting layer, then shows Show that element O1 can issue feux rouges.It is electrically connected to an active member T1 in addition, though Figure 1A only shows display element O1 and shows Show that element O2 is electrically connected to an active member T2, but in any technical field technical staff, it is to be appreciated that display member Part O1~O2 be actually respectively for example, by with 1T1C the framework of framework, 2T1C, the framework of 3T1C, 3T2C framework, The framework of 4T1C, the framework of 4T2C, the framework of 5T1C, the framework of 5T2C, the framework of 6T1C, the framework of 6T2C, 7T2C framework Or the driving unit of any possible framework drives.That is, in the present embodiment, active member T1 is to drive An element in the driving unit of dynamic display element O1, active member T2 is to drive in the driving unit of display element O2 An element.
Then, in forming encapsulated layer F on top electrode C to cover display element O1~O2, to make display element O1~O2 It is isolated with moisture, impurity etc..In the present embodiment, encapsulated layer F can be single layer structure or multilayered structure, and the material of encapsulated layer F Matter may include silicon nitride, aluminium oxide, fire sand, silicon oxynitride, acryl resin, hexamethyldisiloxane (hexamethyl Disiloxane, HMDSO) or glass, but the present invention is not limited thereto.
Then, referring to Figure 1A and Figure 1B, separate release layer 120 with buffer layer 102, to expose connecting line CL1~CL2.In other words, support plate 110 is separated by release layer 120 with buffer layer 102, and makes support plate 110 and buffer layer 102 After separation, display panel 100 just substantially completes.In the present embodiment, display panel 100 have display surface DS and with The back surface B S that display surface DS is arranged oppositely.Specifically, as shown in Figure 1B, the display surface DS of display panel 100 can be by encapsulated layer F Composition, and the back surface B S of display panel 100 can be made of buffer layer 102 and connecting line CL1~CL2.In addition, in present embodiment In, the light that the light and display element O2 that display element O1 is issued are issued can project display panel 100 from display surface DS.At this In embodiment, the method for keeping release layer 120 isolated with buffer layer 102 may include laser lift-off (laser lift-off) work Skill.However, the present invention is not limited thereto.In other embodiments, the method for making release layer 120 isolated with buffer layer 102 can Depending on the material of release layer 120 and it is different, therefore the present invention is not intended to limit the side for keeping release layer 120 isolated with buffer layer 102 Method.
Referring to Fig. 1 C and Fig. 2, in formed in substrate 202 multiple connection pad P1~P8 and a plurality of connecting line CL3~ CL10.In the present embodiment, substrate 202 has surfaces opposite to each other 202a and surface 202b, connection pad P1~P8 and connection Line CL3~CL10 is formed on the 202a of surface.In the present embodiment, connection pad P1~P8 is electric with connecting line CL3~CL10 respectively Property connection.In the present embodiment, substrate 202 can be flexible substrates or rigid substrate.The material of flexible substrates may include high score Sub- material.For example, high molecular material may include polyimides (polyimide, PI), polystyrene (polystyrene, PS), polytetrafluoroethylene (PTFE) (polytetrafluoroethylene, PTFE), polyethylene terephthalate (polyethylene Terephthalate, PET), phenolic resin (phenol-formaldehyde resin), epoxy resin (epoxy resin), Acryl resin (acrylic resin) or combinations thereof.The material of rigid substrate may include glass, quartz, polyesters, poly- carbonic acid Esters, silica, silicon nitride or other materials for having certain rigidity.
In the present embodiment, connection pad P1~P8 and connecting line CL3~CL10 can belong to same film layer.That is, In In present embodiment, connection pad P1~P8 and connecting line CL3~CL10 can have substantially the same material and connection pad P1~P8 It can be formed in mask process with along with connecting line CL3~CL10.Considering based on electric conductivity, connection pad P1~P8 and connecting line CL3~CL10 is usually to use metal material.However, the present invention is not limited thereto, according to other embodiments, connection pad P1~P8 And such as nitride of alloy, metal material, the oxide of metal material, metal material also can be used in connecting line CL3~CL10 The nitrogen oxides of material, other are nonmetallic but have the stack layer of the material of conductive characteristic or metal material and previous materials.Separately Outside, although Fig. 2, which is disclosed, is formed with eight connection pad P1~P8 in substrate 202, the present invention is not intended to limit the quantity of connection pad, connection pad Quantity can be adjusted according to framework, the demand etc. of actually display device.
Then, engage driving element 210 with connection pad P1~P2 by anisotropy conductive layer ACF, to form driving element Substrate 200.As shown in Figure 1 C, driving element 210 can by convex block X1~X2 that it has and anisotropy conductive layer ACF with connect P1~P2 is padded to be electrically connected.Although Fig. 1 C only discloses the part-structure of the correspondence hatching line I-I ' of driving element substrate 200, according to The aforementioned description for connection pad P1~P2, technical staff is, it is to be appreciated that connection pad P3~P8 can pass through different side in any fields Property conductive layer ACF and the convex block corresponding with connection pad P3~P8 for being electrically connected to driving element 210.In other words, in this embodiment party In formula, driving element 210 can be electrically connected by anisotropy conductive layer ACF and connection pad P1~P8.In the present embodiment, it drives Element 210 can be IC chip or flexible circuit board (flexible printed circuit, FPC).In this embodiment party In formula, the material of convex block X1~X2 may include gold, copper or tin.In addition, in the present embodiment, although driving element 210 be with The mode and connection pad P1~P8 of chip bonding (flip chip bonding) are electrically connected, but the present invention is not limited thereto.At it In his embodiment, driving element 210 is electrically connected in a manner of can engaging (wire bonding) by routing with connection pad P1~P8, And at this point, driving element substrate 200 may omit setting connecting line CL3~CL10.
Referring to Fig. 1 C and Fig. 1 D, in forming adhesion coating on the surface 202b of the substrate 202 of driving element substrate 200 300.For example, the method for formation adhesion coating 300 may include on the surface 202b of the substrate 202 of driving element substrate 200 After driving element substrate 200 is spun upside down (upside down), adhesion coating 300 is formed in the surface 202b of substrate 202 On.In the present embodiment, adhesion coating 300 can be single layer structure or multilayered structure, and its material can be insulating materials, such as Acryl resin (acrylic resin), epoxy resin (epoxy), glass cement (glass frit) or other suitable materials The combination of material or previous materials.In the present embodiment, adhesion coating 300 is formed on driving element substrate 200, but the present invention It is not limited to this.In other embodiments, adhesion coating 300 may be formed on the buffer layer 102 of display panel 100, that is, viscous Layer 300 may be formed at the back surface B S of display panel 100.
Then, please refer to Fig. 1 D, after forming adhesion coating 300, formed in substrate 202 multiple opening V3~V4 and Multiple opening V5~V6 are formed in adhesion coating 300.In the present embodiment, opening V3~V4 runs through substrate 202, and the V5 that is open ~V6 runs through adhesion coating 300.In the present embodiment, on the normal direction n2 of substrate 202, the opening V3 of substrate 202 and viscous The opening V5 of layer 300 overlap, and the opening V4 and the opening V6 of adhesion coating 300 of substrate 202 overlap.In present embodiment In, the method for forming opening V3~V4 and the V5~V6 that is open dials separating process or Lithography Etching technique (PEP) for example including laser, And opening V3~V4 and opening V5~V6 can be formed in same processing step.In addition, in the present embodiment, in substrate On 202 normal direction n2, the opening V5 of the connecting line CL1 of display panel 100 and the opening V3 of substrate 202 and adhesion coating 300 It overlaps, and the connecting line CL2 of display panel 100 overlaps with the opening V4 of substrate 202 and the opening V6 of adhesion coating 300.It changes Yan Zhi, in the present embodiment, the opening V3~V4 and connecting line CL1~CL2 of substrate 202 are correspondingly arranged, and adhesion coating 300 Opening V5~V6 and connecting line CL1~CL2 is correspondingly arranged.As it was noted above, in other embodiments, adhesion coating 300 can shape At on the buffer layer 102 of display panel 100, then at this time opening V3~V4 of substrate 202 can with form opening for adhesion coating 300 It is formed in the different processing step of the processing step of mouth V5~V6.However, the present invention is not limited thereto.In other embodiments In, on the buffer layer 102 that adhesion coating 300 is formed in display panel 100, opening V3~V4 of substrate 202 can also be with adhesion coating 300 opening V5~V6 is formed in same processing step.
Display panel 100 is made by adhesion coating 300 after forming opening V3~V6 referring to Fig. 1 D and Fig. 1 E Back surface B S be bonded each other with driving element substrate 200, and make display panel 100 together with 200 pairs of groups of driving element substrate. In other words, in the present embodiment, driving element substrate 200 is located on the back surface B S of display panel 100, and display panel 100 It is located at driving element substrate 200 in the opposite sides of adhesion coating 300.As it was noted above, the configuration of adhesion coating 300 is driving On the surface 202b of the substrate 202 of device substrate 200, therefore back surface B S and driving member of the adhesion coating 300 to make display panel 100 The surface 202b of the substrate 202 of part substrate 200 is bonded.That is, in the present embodiment, driving element 210 and display surface Plate 100 distinguishes position in the opposite sides of substrate 202.On the other hand, as it was noted above, the back surface B S of display panel 100 is by delaying Layer 102 and connecting line CL1~CL2 composition are rushed, therefore adhesion coating 300 can be directly connected to buffer layer 102 and connecting line CL1~CL2.
As it was noted above, on the normal direction n2 of substrate 202, the connecting line CL1 and driving element base of display panel 100 The opening V3 and opening V5 of plate 200 overlap, and the opening V4 of the connecting line CL2 of display panel 100 and driving element substrate 200 And opening V6 overlaps, therefore after display panel 100 is bonded each other with driving element substrate 200, driving element substrate 200 The opening V3 and V5 that is open exposes the connecting line CL1 of part, and the opening V4 of driving element substrate 200 and opening V6 expose portion The connecting line CL2 divided, as referring to figure 1E.In addition, in the present embodiment, make display panel 100 and driving element substrate 200 that The technique of this fitting may include contraposition step, pressing step, curing schedule or combinations thereof, depending on material, the form etc. of adhesion coating 300 Depending on.
Then, Fig. 1 E is please referred to, forms multiple conductive pattern CP1~CP2 in opening V3~V6.In present embodiment In, conductive pattern CP1 filling opening V3 and opening V5, and conductive pattern CP2 filling opening V4 and opening V6.From another viewpoint and Speech, in the present embodiment, conductive pattern CP1 has run through substrate 202 and adhesion coating 300, and conductive pattern CP2 has run through substrate 202 and adhesion coating 300.In the present embodiment, the material of conductive pattern CP1~CP2 may include conductive silver glue (Ag paste), Conductive carbon paste or other suitable conductive materials.
In the present embodiment, conductive pattern CP1 is directly connected to connecting line CL1 and connecting line CL3, and conductive pattern CP2 is directly connected to connecting line CL2 and connecting line CL4.In other words, in the present embodiment, display panel 100 can pass through conduction Pattern CP1~CP2 and be electrically connected to driving element 210.Specifically, in the present embodiment, display panel 100 can pass through Connecting line CL1, conductive pattern CP1, connecting line CL3, connection pad P1, anisotropy conductive layer ACF and convex block X1 and be electrically connected at drive Dynamic element 210, and can by connecting line CL2, conductive pattern CP2, connecting line CL4, connection pad P2, anisotropy conductive layer ACF and Convex block X2 and be electrically connected at driving element 210.In this way, which in the present embodiment, connecting line CL1~CL2 can be collected to The region corresponding with driving element 210 of display panel 100, to be electrically connected with driving element 210, driving element 210 whereby Size can reduce.In other words, in the present embodiment, connecting line CL1~CL2 of display panel 100 can act on to collect line. However, the present invention is not limited thereto, in other embodiments, connecting line CL1~CL2 of display panel 100 can not be towards specific Region is collected, and connecting line CL3~CL4 of driving element substrate 200 then acts on to collect line.
In addition, though the cut-away section structure that Fig. 1 D and Fig. 1 E only disclose driving element substrate 200 (can refer in Fig. 2 The position of hatching line I-I '), but according to the aforementioned description for connection pad P1~P2 and conductive pattern CP1~CP2, any fields Middle technical staff is, it is to be appreciated that connection pad P3~P8 can pass through the conductive pattern electrical property through substrate 202 and adhesion coating 300 respectively It is connected to display panel 100.
So far, the production of the display device 10 of present embodiment can be substantially completed after previous process.Display device 10 may include display panel 100, driving element substrate 200 and adhesion coating 300.The driving element 210 of driving element substrate 200 It is configured in substrate 202 and is electrically connected at display panel 100.Adhesion coating 300 is configured at display panel 100 and driving element base Between the substrate 202 of plate 200.As referring to figure 1E, adhesion coating 300 is directly connected in back surface B S and the driving of display panel 100 The surface 202b of the substrate 202 of device substrate 200.
It is worth noting that the manufacturing method of display device 10 is the following steps are included: form on the surface 202a of substrate 202 Driving element substrate 200 configured with driving element 210 makes the back surface B S and driving member of display panel 100 by adhesion coating 300 The surface 202b of the substrate 202 of part substrate 200 is bonded, and display panel 100 is made to be electrically connected to each other with driving element 210, Display device 10 can realize the target of narrow frame or Rimless whereby.On the other hand, in the manufacturing method of display device 10, by Before being bonded display panel 100 with driving element substrate 200, driving element substrate 200 has been bonded to driving element 210, Therefore it can avoid the element (such as display element O1~O2) in display panel 100 because of the high temperature of the joint technology of driving element 210 Environment and damage.
In display device 10, adhesion coating 300 is mounted directly on the buffer layer 102 of display panel 100, but the present invention is not It is limited to this.It is illustrated hereinafter, other implementation forms will be directed to referring to Fig. 3 A to Fig. 3 D.Herein it should be noted that, it is following Embodiment has continued to use the component symbol and partial content of aforementioned embodiments, wherein being indicated using the same or similar symbol The same or similar element, and the explanation of same technique content is omitted.Explanation about clipped can refer to aforementioned reality Mode is applied, it is no longer repeated for following embodiments.
Fig. 3 A to Fig. 3 D is the diagrammatic cross-section according to the manufacturing process of the display device of another embodiment of the present invention.
A referring to figure 3., firstly, in forming substrate 402 on support plate 110.In the present embodiment, support plate 110 is, for example, to use To carry the temporary carrier of film layer formed in subsequent process steps.In the present embodiment, the material of substrate 402 may include High molecular material or inorganic material.For example, high molecular material may include polyimides (PI), polystyrene (PS), poly- four Vinyl fluoride (PTFE), polyethylene terephthalate (PET), phenolic resin, epoxy resin, acryl resin or combinations thereof.It lifts For example, inorganic material can be silicon nitride (SiNx), silica (SiOx), silicon oxynitride (SiOxNy), metal or combinations thereof. Then, multiple connection structure CS3~CS4 are formed in substrate 402.Considering based on electric conductivity, connection structure CS3~CS4 mono- As be using metal material.However, the present invention is not limited thereto, according to other embodiments, connection structure CS3~CS4 can also To use such as nitride of alloy, metal material, the oxide of metal material, the nitrogen oxides of metal material, other non-gold Belong to but have the material of conductive characteristic or the stack layer of metal material and previous materials.
After forming connection structure CS3~CS4, in formation connecting line CL1~CL2, buffer layer 102, grid in substrate 402 Insulating layer GI, interlayer insulating film IL1, active member T1~T2, signal wire SL1~SL2, connection structure CS1~CS2, interlayer are exhausted Edge layer IL2, flatness layer PL, pixel defining layer PDL, display element O1~O2 and encapsulated layer F.Connecting line CL1~CL2, buffer layer 102, gate insulation layer GI, interlayer insulating film IL1, active member T1~T2, interlayer insulating film IL2, flatness layer PL, pixel defining layer The associated description of PDL, display element O1~O2 and encapsulated layer F at large illustrated in aforementioned embodiments, therefore related Illustrate to repeat no more refering to aforementioned embodiments in this.In addition, in the present embodiment, connecting line CL1 and connection structure CS3 It is directly connected to, and connecting line CL2 and connection structure CS4 is directly connected to.In other words, in the present embodiment, connecting line CL1 can electricity Property is connected to connection structure CS3, and connecting line CL2 can be electrically connected at connection structure CS4.
Then, A and Fig. 3 B referring to figure 3., separates support plate 110 with substrate 402, with expose connection structure CS3~ CS4.In the present embodiment, after separating support plate 110 with substrate 402, display panel 400 just substantially completes.In In present embodiment, display panel 400 is with the display surface 4DS and back side 4BS being arranged oppositely with display surface 4DS.Specifically, As shown in Figure 3B, the display surface 4DS of display panel 400 can be made of encapsulated layer F, and the back side 4BS of display panel 400 can be by base Bottom 402 and connection structure CS3~CS4 composition.In addition, in the present embodiment, the light and display member that display element O1 is issued The light that part O2 is issued can project display panel 400 from display surface 4DS.In the present embodiment, make support plate 110 and substrate 402 Isolated method may include that mechanical force is removed or laser is removed.In addition, in the present embodiment, by being provided on support plate 110 Substrate 402, so that substrate 402 can play guarantor during separating support plate 110 to obtain display panel 400 with substrate 402 Protective function and the yield for promoting display panel 400.
Then, referring to Fig. 3 C and Fig. 3 D, the back side 4BS and driving member of display panel 400 are made by adhesion coating 300 Part substrate 200 is bonded each other, and makes display panel 400 together with 200 pairs of groups of driving element substrate.In other words, in this implementation In mode, driving element substrate 200 is located on the back side 4BS of display panel 400, and display panel 400 and driving element substrate 200 are located in the opposite sides of adhesion coating 300.The associated description of adhesion coating 300 and driving element substrate 200 Yu Qianshu At large illustrated in embodiment, therefore related description is repeated no more refering to aforementioned embodiments in this.Such as aforementioned embodiment party Described in formula, adhesion coating 300 is configured on the surface 202b of the substrate 202 of driving element substrate 200, therefore adhesion coating 300 is to make The surface 202b of the substrate 202 of the back side 4BS and driving element substrate 200 of display panel 400 is bonded.That is, in this reality It applies in mode, driving element 210 and display panel 400 distinguish position in the opposite sides of substrate 202.In addition, as it was noted above, The back side 4BS of display panel 400 is made of substrate 402 and connection structure CS3~CS4, therefore adhesion coating 300 can be straight with substrate 402 It connects in succession.
In addition, in the present embodiment, on the normal direction n2 of substrate 202, the connection structure CS3 of display panel 400 It overlaps with the opening V3 and opening V5 of driving element substrate 200, and the connection structure CS4 and driving element of display panel 400 The opening V4 and opening V6 of substrate 200 overlap, therefore after display panel 400 is bonded each other with driving element substrate 200, it drives The opening V3 and opening V5 of dynamic device substrate 200 expose the connection structure CS3 of part, and the opening of driving element substrate 200 V4 and opening V6 exposes the connection structure CS4 of part, as shown in Figure 3D.In other words, in the present embodiment, substrate 202 Opening V3~V4 and connection structure CS3~CS4 is correspondingly arranged, and the opening V5~V6 and connection structure CS3 of adhesion coating 300~ CS4 is correspondingly arranged.In addition, in the present embodiment, the technique for being bonded display panel 400 each other with driving element substrate 200 It may include contraposition step, pressing step, curing schedule or combinations thereof, depending on the material of adhesion coating 300, form etc..
Then, D referring to figure 3. forms multiple conductive pattern CP3~CP4 in opening V3~V6.In present embodiment In, conductive pattern CP3 filling opening V3 and opening V5, and conductive pattern CP4 filling opening V4 and opening V6.From another viewpoint and Speech, in the present embodiment, conductive pattern CP3 has run through substrate 202 and adhesion coating 300, and conductive pattern CP4 has run through substrate 202 and adhesion coating 300.In the present embodiment, the material of conductive pattern CP3~CP4 may include conductive silver glue, conductive carbon paste or Other suitable conductive materials.
In the present embodiment, conductive pattern CP3 is directly connected to connection structure CS3 and connecting line CL3, and conductive pattern CP4 is directly connected to connection structure CS4 and connecting line CL4.In other words, in the present embodiment, display panel 400 can be by leading Electrical pattern CP3~CP4 and be electrically connected to driving element 210.Specifically, in the present embodiment, display panel 400 can lead to Cross connecting line CL1, connection structure CS3, conductive pattern CP3, connecting line CL3, connection pad P1, anisotropy conductive layer ACF and convex block X1 And it is electrically connected at driving element 210, and connecting line CL2, connection structure CS4, conductive pattern CP4, connecting line can be passed through CL4, connection pad P2, anisotropy conductive layer ACF and convex block X2 and be electrically connected at driving element 210.In this way, in this embodiment party In formula, connecting line CL1~CL2 can be collected to the region corresponding with driving element 210 of display panel 400, with driving element 210 are electrically connected, and the size of driving element 210 can reduce whereby.In other words, in the present embodiment, the company of display panel 400 Wiring CL1~CL2 can act on collecting line.However, the present invention is not limited thereto, and in other embodiments, display panel 400 Connecting line CL1~CL2 can not collect towards specific region, and connecting line CL3~CL4 of driving element substrate 200 is then acted on and is Collect line.
In addition, though the cut-away section structure that Fig. 3 C and Fig. 3 D only disclose driving element substrate 200 (can refer in Fig. 2 The position of hatching line I-I '), but according to the description described previously for connection pad P1~P2 and conductive pattern CP3~CP4, any fields Middle technical staff is, it is to be appreciated that connection pad P3~P8 can pass through the conductive pattern electrical property through substrate 202 and adhesion coating 300 respectively It is connected to display panel 400.
In addition, in the present embodiment, although the substrate 402 of display panel 400 belongs to flexible substrates, the present invention is not It is limited to this.In other embodiments, the substrate 402 of display panel 400 can belong to rigid substrate, material may include glass, Quartz, polyesters, polycarbonate-based or other materials for having certain rigidity, and the manufacturing process of display panel 400 can at this time It omits and uses support plate.
So far, the production of the display device 20 of present embodiment can be substantially completed after previous process.Display device 20 may include display panel 400, driving element substrate 200 and adhesion coating 300.The driving element 210 of driving element substrate 200 It is configured in substrate 202 and is electrically connected at display panel 400.Adhesion coating 300 is configured at display panel 400 and driving element base Between the substrate 202 of plate 200.Specifically, in the present embodiment, adhesion coating 300 is configured at the substrate of display panel 400 Between 402 and the substrate 202 of driving element substrate 200.In other words, as shown in 3D, adhesion coating 300 is directly connected in display panel The surface 202b of the substrate 202 of 400 back side 4BS and driving element substrate 200.
It is worth noting that the manufacturing method of display device 20 is the following steps are included: form on the surface 202a of substrate 202 Driving element substrate 200 configured with driving element 210 makes back side 4BS and the driving of display panel 400 by adhesion coating 300 The surface 202b of the substrate 202 of device substrate 200 is bonded, and connects display panel 400 electrically each other with driving element 210 It connects, display device 20 can realize the target of narrow frame or Rimless whereby.On the other hand, in the manufacturing method of display device 20 In, since before being bonded display panel 400 with driving element substrate 200, driving element substrate 200 has been bonded to driving element 210, therefore can avoid the element (such as display element O1~O2) in display panel 400 because of the joint technology of driving element 210 Hot environment and damage.
In display device 10 and display device 20, the driving element 210 of driving element substrate 200 passes through anisotropy conduction Layer ACF and be electrically connected at connecting line CL1~CL2 of display panel 100, but the present invention is not limited thereto.In other embodiment party In formula, display device can not have anisotropy conductive layer, and after driving element substrate conforms to display panel, can refer to be formed The technology for rerouting the technique of layer (redistribution layer, RDL), by carrying out Lithography Etching technique or routing technique To be routed so that driving element is electrically connected at the connecting line of display panel.
Although the present invention is disclosed as above with embodiment, however, it is not to limit the invention, any affiliated technology neck Technical staff in domain, without departing from the spirit and scope of the present invention, when can make a little variation and retouching, therefore guarantor of the invention Range is protected subject to view as defined in claim.

Claims (11)

1. a kind of manufacturing method of display device, comprising:
A display panel is formed, there is the display surface being arranged oppositely and a back side;
A driving element substrate is formed, wherein the driving element substrate includes one first substrate and a driving element, driving member Part is configured on a first surface of first substrate;
Make a second surface at the back side of the display panel and first substrate of the driving element substrate by an adhesion coating It is bonded each other, wherein the first surface is arranged oppositely with the second surface;And
The display panel is set to be electrically connected to each other with the driving element.
2. the manufacturing method of display device as described in claim 1, wherein the forming method of the driving element substrate includes:
In forming multiple connection pads and a plurality of first connecting line on the first surface of first substrate, the multiple connection pad respectively with A plurality of first connecting line is electrically connected;And
It is electrically connected the driving element and the multiple connection pad.
3. the manufacturing method of display device as claimed in claim 2, wherein the forming method of the display panel includes:
In sequentially forming a plurality of second connecting line, a buffer layer, multiple active members and multiple display elements on a support plate, In the buffer layer cover a plurality of second connecting line, the multiple active member is electrical with a plurality of second connecting line respectively Connection, the multiple display element are electrically connected with the multiple active member respectively;And
Separate the support plate with the buffer layer, to expose a plurality of second connecting line.
4. the manufacturing method of display device as claimed in claim 3, wherein making the back of the display panel by the adhesion coating Face includes: with the method that the second surface of first substrate of the driving element substrate is bonded each other
The adhesion coating is formed on the second surface of first substrate of the driver circuit plate or this of the display panel delays It rushes on layer;
Multiple openings are formed in first substrate, the multiple opening is correspondingly arranged with a plurality of first connecting line;And
The driving element substrate is bonded with the display panel by the adhesion coating.
5. the manufacturing method of display device as claimed in claim 4, wherein keeping the display panel and the driving element electric each other Property connection method include:
Multiple conductive patterns are formed, the multiple opening is inserted and run through the adhesion coating, wherein the multiple conductive pattern is distinguished It is electrically connected at one of described a plurality of first connecting line and one of a plurality of second connecting line.
6. the manufacturing method of display device as claimed in claim 3, wherein before forming a plurality of second connecting line, also Include:
In one second substrate of formation on the support plate;
Multiple connection structures are formed in second substrate, wherein the multiple connection structure is connect with described a plurality of second respectively Line is electrically connected;And
Separate the support plate with second substrate, to expose the multiple connection structure.
7. the manufacturing method of display device as claimed in claim 6, wherein making the back of the display panel by the adhesion coating Face includes: with the method that the second surface of first substrate of the driving element substrate is bonded each other
The adhesion coating is formed on the second surface of first substrate of the driver circuit plate or the display panel this In two substrates;
Multiple openings are formed in first substrate, the multiple opening is correspondingly arranged with the multiple connection structure;And
The driving element substrate is bonded with the display panel by the adhesion coating.
8. the manufacturing method of display device as claimed in claim 7, wherein keeping the display panel and the driving element electric each other Property connection method include:
Multiple conductive patterns are formed, the multiple opening is inserted and run through the adhesion coating, wherein the multiple conductive pattern is distinguished It is electrically connected at one of one of described a plurality of first connecting line and the multiple connection structure.
9. a kind of display device, comprising:
One display panel;
One driving element substrate, is configured on the display panel, and wherein the driving element substrate includes one first substrate and one Driving element, the driving element are configured in first substrate, and the driving element and the display panel are electrically connected;And
One adhesion coating is configured between the display panel and first substrate of the driving element substrate.
10. display device as claimed in claim 9, wherein
First substrate includes multiple openings;And
The display device further includes multiple conductive patterns, is respectively arranged in the multiple opening and runs through the adhesion coating, wherein The multiple conductive pattern is electrically connected at the driving element and the display panel.
11. display device as claimed in claim 9, wherein the display panel includes one second substrate, and the adhesion coating configures Between second substrate of the display panel and first substrate of the driving element substrate.
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