CN110517974B - Semiconductor processing equipment - Google Patents
Semiconductor processing equipment Download PDFInfo
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- CN110517974B CN110517974B CN201910692061.1A CN201910692061A CN110517974B CN 110517974 B CN110517974 B CN 110517974B CN 201910692061 A CN201910692061 A CN 201910692061A CN 110517974 B CN110517974 B CN 110517974B
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 24
- 239000000463 material Substances 0.000 claims description 27
- 239000011810 insulating material Substances 0.000 claims description 17
- 239000004809 Teflon Substances 0.000 claims description 6
- 229920006362 Teflon® Polymers 0.000 claims description 6
- 239000000919 ceramic Substances 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 4
- 230000003014 reinforcing effect Effects 0.000 claims description 4
- 239000012779 reinforcing material Substances 0.000 claims description 3
- 238000003466 welding Methods 0.000 claims description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract description 26
- 229910002804 graphite Inorganic materials 0.000 abstract description 26
- 239000010439 graphite Substances 0.000 abstract description 26
- 238000007789 sealing Methods 0.000 abstract description 12
- 230000000694 effects Effects 0.000 abstract description 11
- 230000007246 mechanism Effects 0.000 abstract description 2
- 238000000034 method Methods 0.000 description 10
- 230000008569 process Effects 0.000 description 8
- 230000005684 electric field Effects 0.000 description 7
- 238000009792 diffusion process Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000006835 compression Effects 0.000 description 2
- 238000007906 compression Methods 0.000 description 2
- 238000005034 decoration Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 230000001788 irregular Effects 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- QNRATNLHPGXHMA-XZHTYLCXSA-N (r)-(6-ethoxyquinolin-4-yl)-[(2s,4s,5r)-5-ethyl-1-azabicyclo[2.2.2]octan-2-yl]methanol;hydrochloride Chemical compound Cl.C([C@H]([C@H](C1)CC)C2)CN1[C@@H]2[C@H](O)C1=CC=NC2=CC=C(OCC)C=C21 QNRATNLHPGXHMA-XZHTYLCXSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 230000003044 adaptive effect Effects 0.000 description 1
- 238000001505 atmospheric-pressure chemical vapour deposition Methods 0.000 description 1
- 238000010009 beating Methods 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- -1 has insulating Substances 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000011226 reinforced ceramic Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000000779 smoke Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4409—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber characterised by sealing means
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/223—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
The invention discloses semiconductor processing equipment, which comprises a furnace body and a furnace door, wherein an electrode structure is arranged on the furnace door, an adjusting structure is arranged on the furnace door, the furnace door comprises an adjusting device body and a knob piece arranged on the adjusting device body, and the adjusting device body is connected with the furnace door through the knob piece; the axial direction of the adjusting device body is in a non-parallel relation with the axial direction of the knob piece; the invention provides the semiconductor processing equipment which is simple in structure, reasonable in electrode mechanism design, capable of realizing the longitudinal arrangement of the graphite boat piece by perfectly combining the furnace door and quickly adjusting the furnace door to achieve a good sealing effect.
Description
Technical Field
The invention relates to the field of semiconductor or photovoltaic material processing, in particular to semiconductor processing equipment.
Background
Semiconductor or photovoltaic material is widely applied to industries such as electronics, new energy and the like, the semiconductor and photovoltaic material can be applied to products generally through chemical treatment, the CVD technology is one of the treatment modes, CVD is chemical vapor deposition, the CVD technology is widely applied to semiconductor or photovoltaic material processing at present, common processing equipment comprises PECVD, LPCVD, APCVD and the like, diffusion processes such as phosphorus diffusion, boron diffusion and the like can be adopted to process raw materials except CVD, a plurality of related equipment exist in the industry at present, corresponding equipment can be selected to process according to specific processing requirements, the semiconductor or photovoltaic material processing is generally realized by feeding a sheet material into a furnace to react under the conditions of certain temperature and pressure, in the process of processing the semiconductor or photovoltaic material, devices are commonly used to load or move materials to be processed, in-process, or after-process, and such loaded or moved devices are commonly referred to in the industry as boats, graphite boats, or flower baskets.
The following problems exist in the current devices: the graphite boat is usually large in size, the transverse arrangement is adopted, the size can reach about 2 meters generally, the electric field is transmitted from the tail part to the front part of the whole graphite boat to generate great difference, and the uniform electric field is difficult to obtain. Wherein, the graphite boat piece is also vertically arranged, and the flaky material is vertically arranged between the graphite boat pieces and is jointed with the graphite boat pieces. Because the flaky material needs to be vertically placed, the situation that the surface of the flaky material is not tightly attached to the surface of the graphite boat piece can occur, so that the flaky material is poor in electric conduction, the flaky material after the process is plated in a winding manner, black edges can be generated around the flaky material, and the risk of chipping exists, so that the defective product rate is increased.
And the furnace gate of corresponding existing equipment is sealed by the mode that closing plate and furnace frame contacted, and the closing plate is the buckle formula, the closing plate passes through the buckle promptly and fixes on the furnace gate, when the furnace gate is sealed not tight, operating personnel makes the closing plate go forward through the mode of beating the buckle and seal, however, through long-time the use, the position wearing and tearing that closing plate and furnace frame contacted are serious, when rethread sealing plate seals furnace gate and furnace frame, the sealed not tight condition will appear, thereby lead to the furnace gate to smoke, influence sanitation, still can cause serious influence to enterprise economic benefits and social simultaneously.
Disclosure of Invention
The invention overcomes the defects of the prior art, and provides the semiconductor processing equipment which has a simple structure, reasonable electrode mechanism design, realizes the longitudinal arrangement of the graphite boat piece by perfectly combining the furnace door, and can quickly adjust the furnace door to achieve good sealing effect.
The technical scheme of the invention is as follows:
the semiconductor processing equipment comprises a furnace body and a furnace door, wherein an electrode structure is arranged on the furnace door and comprises an electrode column, an electrode main body and an insulating material, the electrode column is connected with the electrode main body, and the insulating material covers the side surface of the electrode column; one end of the electrode column is connected with the electrode main body; the other end of the electrode column is exposed, so that the contact area is enlarged;
the electrode column comprises a connecting part, a jointing part and a fixing part; the connecting part is covered with an insulating and reinforcing material, the connecting part is covered with an insulating and stretchable material, and the fixing part is covered with an insulating material; a conductive connecting piece is arranged between the electrode column and the electrode main body; one end of the conductive connecting piece is provided with a placing hole for placing the electrode column, and the other end of the conductive connecting piece is provided with a connecting hole for connecting the electrode main body; the diameters of the connecting part and the jointing part of the electrode column are the same, and the diameter of the jointing part is larger than that of the fixing part;
the furnace body is cylindrical or cuboid, the furnace body is made of metal, and one exposed end of the electrode column is in the shape of an arc spherical surface;
the furnace door is provided with an adjusting structure which comprises an adjusting device body and a knob piece arranged on the adjusting device body, and the adjusting device body is connected with the furnace door through the knob piece; the axial direction of the adjusting device body is in a non-parallel relation with the axial direction of the knob piece; the center of the furnace door is provided with a connecting part which is connected with the adjusting device body, and the connecting part is provided with a through hole matched with the knob piece; one end of the adjusting device body, which is close to the center of the furnace door, is provided with a connecting hole, the connecting hole is close to one side of the furnace door, and the diameter of the connecting hole is the largest; or the diameter of the connecting hole is the largest on the side of the connecting hole far away from the furnace door; one end of the adjusting device far away from the center of the furnace door is provided with a rotating piece for controlling the rotating of the adjusting device body.
Furthermore, an auxiliary fixing device is arranged on the side face of the joint part of the electrode column; the auxiliary fixing device is fixed on one side of the furnace door, which is far away from the furnace body; the auxiliary fixing device comprises a fixing column, an air cylinder, a telescopic rod and a clamping device; one end of the fixing column is fixed with the furnace door, and the other end of the fixing column is fixed with the air cylinder; one end of the cylinder, which is close to the electrode column, is provided with a telescopic rod which is controlled by the cylinder; the other end of the telescopic rod is fixed with the clamping device.
Furthermore, the connecting part is covered by a ceramic insulating sleeve, the connecting part is covered by a corrugated pipe, and the fixing part is covered by a Teflon sleeve; and a conductive connecting piece is arranged between the electrode column and the electrode main body and adopts a flange.
Furthermore, reinforcing ribs are arranged on the outer side of the furnace body.
Furthermore, the furnace body is made of high-temperature-resistant and pressure-resistant materials.
Further, the axial direction of the adjusting device body is perpendicular to the axial direction of the knob piece.
Further, a fixing piece is arranged around the rotary piece and fixed through bolts, rivets or welding.
Furthermore, one end of the rotating piece, which is far away from the adjusting device body, is provided with an adjusting piece, and the other end of the rotating piece is fixed on the adjusting device body; the adjusting piece is sleeved and fixed on the rotating piece, so that the rotating piece is controlled by the adjusting piece.
Furthermore, the contact surface between the adjusting piece and the rotating piece adopts a concave-convex surface to fix the rotating piece.
Furthermore, the whole body of the adjusting device is a cuboid; the connecting part is integrally cylindrical, and one end of the connecting part, which is far away from the furnace door, is provided with a guide angle; a thermocouple is arranged on the furnace door; the other end of the adjusting device body is connected with the lifting module to realize the lifting control of the furnace door; the lifting module comprises a sliding rail, a cylinder and a fixing piece, the fixing piece is connected with the adjusting device body, the cylinder is connected with the fixing piece, and the fixing piece is arranged on the sliding rail.
The invention has the advantages that:
this scheme simple structure, reasonable in design, adopt high temperature resistant, resistance to compression material with reaction equipment's furnace body to metal material selects as the preferred, improves the resistance to compression attribute and the life of itself. The selection of the metal conductive material is to cover an insulating material in the electrode structure to avoid the electric leakage in order to avoid the electrification of the furnace body. When the furnace body adopts a non-circular design or other materials, the pressure resistance is poor, so that the corresponding reinforcing rib design is added to improve the overall pressure resistance.
Electrode structure specifically adopts multiple insulating material, has insulating, reinforced ceramic insulation sleeve material, has insulating, tensile bellows material, cup joints the teflon sleeve material that has high temperature resistant and insulating properties easily, realizes being in different positions on the furnace body and adopts different insulating materials in the electrode post, reaches perfect insulating and furnace body's vacuum seal effect as far as possible.
The flange of connecting piece is selected, better connection electrode post and electrode main part, with the furnace gate because of setting up the part that electrode structure department takes place the electric leakage easily, strengthen the guarantee and can reach the requirement of vacuum state. The auxiliary fixing device arranged on the electrode column can flexibly adjust and control the electrode column.
The adjustment of the adjusting device body is used as a dimension of the adjusting furnace door, the auxiliary adjusting furnace door of the knob piece is another dimension, and therefore the adjusting of the furnace door is achieved, and the vacuum sealing effect is achieved by matching with the furnace body. When the two dimensions are in a vertical relation, the furnace door can be adjusted efficiently and conveniently, and a good sealing effect of combining the furnace door and the furnace body is achieved. The knob piece can be used as a structure for adjusting one dimension of the furnace door and can also realize the connection between the furnace door and the adjusting device body.
This scheme sets up the through-hole that matches with knob spare on connecting portion, provides knob spare and rotates the space of fine setting furnace gate. One end of the connecting part is provided with a guide angle, so that the effect of conveniently and quickly installing the furnace door and connecting the adjusting device body is realized. The diameter of the connecting hole is changed, the smallest place of the connecting hole is used as a fixed point, and other positions provide space for fine adjustment of the oven door. The contact surface between the adjusting piece and the rotating piece adopts a concave-convex surface to reinforce the rotating piece. This scheme is concrete through set up the adjustment piece on revolving the piece and control and revolve the piece, and the adjustment piece also adopts the device that can press from both sides tight piece of revolving, and the fixed rotation is again after revolving to realize the control adjustment of this dimension. Wherein the knob piece can be connected with the cylinder for control, and intelligent fine adjustment is realized.
Drawings
FIG. 1 is a schematic view of the present invention with a graphite boat installed;
FIG. 2 is a schematic view of a conventional cylindrical reactor with an electrode structure according to the present invention;
FIG. 3 is an exploded view of an electrode structure of the present invention;
FIG. 4 is a cross-sectional view of FIG. 3 of the present invention;
FIG. 5 is an exploded view of another electrode configuration of the present invention;
FIG. 6 is a cross-sectional view of FIG. 5 in accordance with the present invention;
FIG. 7 is a schematic view of the oven door adjustment structure of the present invention in combination with a lifting module;
FIG. 8 is a cross-sectional view of the adjustment structure of FIG. 7 in accordance with the present invention;
fig. 9 is an exploded view of the adjustment structure of fig. 7 in accordance with the present invention.
The labels in the figure are: the furnace comprises a furnace body 1, a furnace door 2, a connecting part 2-12, an adjusting device body 2-13, a connecting hole 2-14, a knob piece 2-15, a rotating piece 2-16, a fixing piece 2-17, an adjusting piece 2-18, an auxiliary fixing device 3-1, a flange 3-2, a sealed cavity 3-21, a Teflon sleeve 3-3, a corrugated pipe 3-4, an electrode main body 3-5, a ceramic insulating sleeve 3-6, an electrode column 3-7, a gas input port 4 and a vacuum interface 5.
Detailed Description
The invention is further described with reference to the following figures and detailed description. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
Example (b):
as shown in fig. 1 to 6, the semiconductor processing equipment comprises a furnace body 1 and a furnace door 2, wherein an electrode structure is arranged on the furnace door 2, and the electrode structure comprises electrode columns 3-7, electrode main bodies 3-5 and insulating materials. The electrode column 3-7 is connected with the electrode main body 3-5, and the insulating material covers the side surface of the electrode column 3-7. The electrode columns 3-7 are only exposed out of two ends through the insulation wrapping and covering of the electrode columns, so that the connection of the furnace door 2 and the electrode structure in the graphite boat is more convenient, an even electric field is more easily formed, and the plasma enhanced chemical vapor deposition is realized. As shown in fig. 1, graphite boats are disposed in parallel in the furnace body 1, and silicon wafers on the graphite boats are also disposed in parallel. The productivity that this placed the structure than the vertical graphite boat of placing of tradition is higher, and controls the height of graphite boat more easily, and the electric field difference that the graphite boat afterbody transmitted to anterior will be minimum. Each layer of graphite boat plate which is arranged in the graphite boat in parallel in the furnace body is easier to be arranged tightly, and the reject ratio of products can not be improved.
The furnace body 1 is in a regular shape such as a cylinder or a cuboid, or in an irregular shape such as a polygon or an internal angle shape, and the like, and can be matched with the overall shape of the graphite boat. When the furnace body 1 is designed to be non-cylindrical, the furnace body can be easily extruded and deformed in a vacuum state during the process treatment. In order to prevent the deformation of the furnace body 1 and prolong the service life, reinforcing ribs can be arranged outside the furnace body 1 so as to improve the pressure resistance of the whole furnace body in the using process. The furnace body 1 is made of high temperature resistant and pressure resistant materials, the furnace body 1 is preferably made of metal materials, such as SUS310S stainless steel structure, and the furnace body 1 can also be made of traditional quartz materials.
Specifically, as shown in fig. 3 to 6, the covered electrode column 3-7 includes a connecting portion, a joining portion, and a fixing portion; the connecting part is covered with an insulating and reinforcing material, the connecting part is covered with an insulating and stretchable material, and the fixing part is covered with an insulating material. The concrete connecting part is covered by a ceramic insulating sleeve 3-6, the connecting part is covered by a corrugated pipe 3-4, and the fixing part is covered by a Teflon sleeve 3-3. Naturally, other insulating materials that fulfill this function may be substituted as will occur to those skilled in the art. Taking the best material as an example, the corrugated pipes 3-4 realize dynamic sealing when the electrode structure is lifted. The ceramic insulating sleeve 3-6 further protects the electrode column 3-7 from being corroded by the process treatment gas in the furnace body 1. The Teflon sleeves 3-3 achieve the vacuum sealing and insulating effects when the furnace door 2 is combined with the furnace body 1. Thereby avoiding the electrification when the metal furnace body 1 is adopted, ensuring the safety of the equipment and providing a good environment for processing the graphite boat.
And a conductive connecting piece is arranged between the electrode column 3-7 and the electrode main body 3-5, and the conductive connecting piece adopts a flange 3-2. The connection of the flange 3-2 is facilitated, and the diameters of the connecting part and the connecting part of the electrode column 3-7 are the same, and naturally can be different. The diameter of the connecting part is larger than that of the fixing part, so that the electrode columns 3-7 can be fixed conveniently. Namely, the flange 3-2 is connected with the electrode column 3-7 and the electrode main body 3-5, one end of the flange 3-2 is provided with a placing hole for placing the electrode column 3-7, and the other end of the flange 3-2 is provided with a connecting hole for connecting the electrode main body 3-5. To ensure a perfect connection of the electrode shaft 3-7 to the electrode body 3-5. The specific flange 3-2 comprises an upper part and a lower part, and a sealing cavity 3-21 is arranged between the upper part and the lower part, so that the problem that the treatment effect of the graphite boat is influenced due to the non-sealing condition of the joint of the electrode column 3-7 and the electrode main body 3-5 is avoided.
Preferably, the exposed end of the electrode column 3-7 is in the shape of a circular arc sphere to increase the conduction area, and naturally, other shapes such as a rectangle, a diamond and the like can be adopted, so long as the conduction area is increased, thereby providing a better foundation for connecting with the graphite boat and improving the conduction probability.
An auxiliary fixing device 3-1 is arranged on the side surface of the joint part of the electrode column 3-7; the auxiliary fixing device 3-1 is fixed on one side of the furnace door 2 far away from the furnace body; the auxiliary fixing device 3-1 comprises a fixing column, an air cylinder, a telescopic rod and a clamping device; one end of the fixing column is fixed with the furnace door 2, and the other end of the fixing column is fixed with the air cylinder; one end of the cylinder, which is close to the electrode columns 3-7, is provided with a telescopic rod which is controlled by the cylinder; the other end of the telescopic rod is fixed with the clamping device, so that the movement of the electrode structure is controlled, and the adaptive graphite boat specification is enlarged. Or the connecting part of the electrode column 3-7 can be separated from the connecting part, and the conduction on-off of the electrode column 3-7 can be controlled by the auxiliary fixing device 3-1.
Wherein, still set up vacuum interface 5 on the furnace gate 2 and to the inside evacuation of furnace body 1, through setting up gas input port 4 to the inside input process gas of furnace body 1, this vacuum interface, gas input port 4 are guaranteeing the vacuum seal state in the furnace body 1, can set up according to actual need, also can set up on furnace gate 2 like figure 2 gas input port 4, and vacuum interface sets up on furnace body 1.
As shown in fig. 7 to 9, the oven door 2 is provided with an adjusting structure, which comprises an adjusting device body 2-13 and a knob member 2-15 arranged on the adjusting device body 2-13, wherein the adjusting device body 2-13 is connected with the oven door 2 through the knob member 2-15. The adjusting device bodies 2-13 are formed as one dimension for adjusting the furnace door 2, and the knob pieces 2-15 are used as the other dimension for assisting in adjusting the furnace door 2, so that the adjustment of the furnace door 2 is realized, and the vacuum sealing effect is achieved by matching with a furnace body.
The axial direction of the specific adjusting device body 2-13 and the axial direction of the knob piece 2-15 are in a non-parallel relation, namely, an intersection point exists between the axial direction and the axial direction, so that two-dimensional adjustment can be formed, and the requirement of fine adjustment of the posture change of the furnace door 2 is met. Preferably, the axial direction of the adjusting device bodies 2-13 is perpendicular to the axial direction of the knob pieces 2-15, so that the oven door 2 can be adjusted relatively more efficiently and conveniently.
The center of the furnace door 2 is provided with a connecting part 2-12 connected with an adjusting device body 2-13, and the connecting part 2-12 is provided with a through hole matched with the knob 2-15, so that the knob 2-15 can rotate to finely adjust the furnace door 2. Specifically, the knob member 2-15 may be provided with a thread, and the end of the knob member 2-15 may be a track-shaped. The connecting part 2-12 is integrally cylindrical, and a guide angle is arranged at one end of the connecting part 2-12 far away from the furnace door 2, so that the furnace door 2 and the adjusting device body 2-13 can be quickly installed and fixed. The knob pieces 2-15 can be used as a structure for adjusting one dimension of the furnace door 2 and can also realize the connection of the furnace door 2 and the adjusting device bodies 2-13.
The whole adjusting device bodies 2-13 are cuboids, oval columns, rhombic columns or irregular figure columns, and the like, as long as the adjusting device bodies 2-13 can be used for adjusting one dimension of the furnace door 2, and the adjusting device bodies 2-13 are provided with space structures capable of adjusting the furnace door 2 as the other dimension. One end of the adjusting device body 2-13 close to the center of the furnace door 2 is provided with a connecting hole 2-14, the connecting hole 2-14 is close to one end of the furnace door 2, and the diameter of the connecting hole 2-14 is the largest; or the connecting holes 2-14 are far away from one end of the oven door 2, and the diameter of the connecting holes 2-14 is the largest. The space for fine adjustment of the oven door 2 is provided by the changed inner diameter of the connecting holes 2-14, namely, the place with the smallest inner diameter of the connecting holes 2-14 is used as a fixed point, and the other positions of the connecting holes 2-14 provide the space for fine adjustment of the oven door 2.
One end of the adjusting device body 2-13, which is far away from the center of the furnace door 2, is provided with a rotating piece 2-16 for controlling the rotation of the adjusting device body 2-13, a fixing piece 2-17 is arranged around the rotating piece 2-16, and the fixing piece 2-17 is fixed by adopting a bolt, a rivet or a welding mode, so that the fixing of the adjusting device body 2-13 is realized, and the stable adjustment of the furnace door 2 is ensured. The rotation of the rotating member 2-16 allows for control of the dimension of the adjusting device body 2-13.
One end of the rotating piece 2-16 far away from the adjusting device body 2-13 is also provided with an adjusting piece 2-18, and the other end of the rotating piece 2-16 is fixed on the adjusting device body 2-13. The adjusting pieces 2-18 are sleeved on the rotating pieces 2-16, the adjusting pieces 2-18 fix the rotating pieces 2-16, and contact surfaces between the adjusting pieces 2-18 and the rotating pieces 2-16 are concave-convex surfaces to reinforce the rotating pieces 2-16 or are fixedly connected in other friction force increasing modes or corresponding clamping structures. The adjustment parts 2-18 are arranged on the rotary parts 2-16 to control the rotary parts 2-16. The adjusting member 2-18 itself can also be a clamping screw member 2-16, which is fixed to rotate the screw member 2-16, thereby realizing the control adjustment of the dimension. Wherein, the knob pieces 2-15 can also be connected with the cylinder for control, thereby realizing intelligent fine adjustment.
The furnace door 2 can be also provided with a thermocouple, and the other ends of the adjusting device bodies 2-13 are connected with the lifting module to realize the lifting control of the furnace door 2. The lifting module comprises a slide rail, a cylinder and a fixing piece. The fixing piece is connected with the adjusting device bodies 2-13, the air cylinder is connected with the fixing piece, and the fixing piece is arranged on the slide rail.
In summary, the furnace body 1 and the furnace door 2 are both made of SUS310S stainless steel structure to enhance the pressure resistance. Wherein the oven door 2 can realize the automatic opening and closing of the oven door 2 by connecting a lifting module on the oven door 2. The electrode columns 3-7 arranged on the furnace door 2 do not avoid conducting the whole furnace body 1, and the insulating material is arranged to ensure that the two ends of the electrode columns 3-7 are connected with a power supply, so that the electric field is effectively controlled to be introduced from the electrodes at the two sides of the graphite boat at the same time, the electric field generated in the graphite boat is uniform, the film thickness uniformity of the silicon wafer is good, and the stable control on the product quality is realized. The auxiliary fixing device 3-1 is arranged on the furnace door 2 to realize the control of an electrode structure on the furnace door 2, and the electrode structure is connected with a power supply to form an electric field so as to realize the stable control of the product quality on the graphite boat. The adjustment of the adjusting device body 2-13 is used as one dimension of the adjustment of the furnace door 2 through an adjusting structure arranged on the furnace door 2, and the auxiliary adjustment of the knob piece 2-15 is used as the other dimension of the adjustment of the furnace door 2, so that the adjustment of the furnace door 2 is realized, and the vacuum sealing effect is achieved by matching with a furnace body. When the two dimensions are in a vertical relation, the furnace door 2 can be adjusted efficiently and conveniently, and a good sealing effect of combining the furnace door 2 with the furnace body is achieved. The foregoing is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, several modifications and decorations can be made without departing from the spirit of the present invention, and these modifications and decorations should also be regarded as being within the scope of the present invention.
Claims (10)
1. Semiconductor processing equipment, its characterized in that: the furnace comprises a furnace body and a furnace door, wherein an electrode structure is arranged on the furnace door, the electrode structure comprises an electrode column, an electrode main body and an insulating material, the electrode column is connected with the electrode main body, and the insulating material covers the side surface of the electrode column; one end of the electrode column is connected with the electrode main body; the other end of the electrode column is exposed, so that the contact area is enlarged;
the electrode column comprises a connecting part, a jointing part and a fixing part which are connected in sequence; the connecting part is covered with an insulating and reinforcing material, the connecting part is covered with an insulating and stretchable material, and the fixing part is covered with an insulating material; a conductive connecting piece is arranged between the electrode column and the electrode main body; one end of the conductive connecting piece is provided with a placing hole for placing the electrode column, the other end of the conductive connecting piece is provided with a connecting hole for connecting the electrode main body, and the fixing part is arranged in the placing hole of the conductive connecting piece; the diameters of the connecting part and the jointing part of the electrode column are the same, and the diameter of the jointing part is larger than that of the fixing part;
the furnace body is cylindrical or cuboid, the furnace body is made of metal, and one exposed end of the electrode column is in the shape of an arc spherical surface;
the furnace door is provided with an adjusting structure which comprises an adjusting device body and a knob piece arranged on the adjusting device body, and the adjusting device body is connected with the furnace door through the knob piece; the axial direction of the adjusting device body is in a non-parallel relation with the axial direction of the knob piece; the center of the furnace door is provided with a connecting part which is connected with the adjusting device body, and the connecting part is provided with a through hole matched with the knob piece; one end of the adjusting device body, which is close to the center of the furnace door, is provided with a connecting hole, the connecting hole is close to one side of the furnace door, and the diameter of the connecting hole is the largest; or the diameter of the connecting hole is the largest on the side of the connecting hole far away from the furnace door; one end of the adjusting device far away from the center of the furnace door is provided with a rotating piece for controlling the rotating of the adjusting device body.
2. The semiconductor processing apparatus according to claim 1, wherein: an auxiliary fixing device is arranged on the side face of the joint part of the electrode column; the auxiliary fixing device is fixed on one side of the furnace door, which is far away from the furnace body; the auxiliary fixing device comprises a fixing column, an air cylinder, a telescopic rod and a clamping device; one end of the fixing column is fixed with the furnace door, and the other end of the fixing column is fixed with the air cylinder; one end of the cylinder, which is close to the electrode column, is provided with a telescopic rod which is controlled by the cylinder; the other end of the telescopic rod is fixed with the clamping device.
3. The semiconductor processing apparatus according to claim 1, wherein: the connecting part is covered by a ceramic insulating sleeve, the connecting part is covered by a corrugated pipe, and the fixing part is covered by a Teflon sleeve; and a conductive connecting piece is arranged between the electrode column and the electrode main body and adopts a flange.
4. The semiconductor processing apparatus according to claim 1, wherein: the outside of the furnace body is provided with a reinforcing rib.
5. The semiconductor processing apparatus according to claim 1, wherein: the furnace body is made of high-temperature resistant and pressure resistant materials.
6. The semiconductor processing apparatus according to claim 1, wherein: the axial direction of the adjusting device body is perpendicular to the axial direction of the knob piece.
7. The semiconductor processing apparatus according to claim 5, wherein: the fixing piece is arranged around the rotating piece and fixed by bolts, rivets or welding.
8. The semiconductor processing apparatus according to claim 7, wherein: one end of the rotating piece, which is far away from the adjusting device body, is provided with an adjusting piece, and the other end of the rotating piece is fixed on the adjusting device body; the adjusting piece is sleeved and fixed on the rotating piece, so that the rotating piece is controlled by the adjusting piece.
9. The semiconductor processing apparatus according to claim 8, wherein: the contact surface between the adjusting piece and the rotating piece adopts a concave-convex surface to fix the rotating piece.
10. The semiconductor processing apparatus according to claim 1, wherein: the whole body of the adjusting device is a cuboid; the connecting part at the center of the oven door is integrally cylindrical, and a guide angle is arranged at one end, far away from the oven door, of the connecting part at the center of the oven door; a thermocouple is arranged on the furnace door; the other end of the adjusting device body is connected with the lifting module to realize the lifting control of the furnace door; the lifting module comprises a sliding rail, a cylinder and a fixing piece, the fixing piece is connected with the adjusting device body, the cylinder is connected with the fixing piece, and the fixing piece is arranged on the sliding rail.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202011263199.9A CN112820665B (en) | 2019-07-30 | 2019-07-30 | Furnace door structure for semiconductor processing equipment |
| CN202011260513.8A CN112563162B (en) | 2019-07-30 | 2019-07-30 | Semiconductor processing equipment based on novel electrode structure |
| CN201910692061.1A CN110517974B (en) | 2019-07-30 | 2019-07-30 | Semiconductor processing equipment |
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| CN202011260513.8A Division CN112563162B (en) | 2019-07-30 | 2019-07-30 | Semiconductor processing equipment based on novel electrode structure |
| CN202011263199.9A Division CN112820665B (en) | 2019-07-30 | 2019-07-30 | Furnace door structure for semiconductor processing equipment |
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| CN202011263199.9A Active CN112820665B (en) | 2019-07-30 | 2019-07-30 | Furnace door structure for semiconductor processing equipment |
| CN202011260513.8A Active CN112563162B (en) | 2019-07-30 | 2019-07-30 | Semiconductor processing equipment based on novel electrode structure |
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Also Published As
| Publication number | Publication date |
|---|---|
| CN112563162A (en) | 2021-03-26 |
| CN112563162B (en) | 2024-05-03 |
| CN112820665B (en) | 2023-12-08 |
| CN112820665A (en) | 2021-05-18 |
| CN110517974A (en) | 2019-11-29 |
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Address after: No.1, Jikang Road, Kengzi street, Pingshan District, Shenzhen City, Guangdong Province Patentee after: Laplace New Energy Technology Co.,Ltd. Address before: No.1, Jikang Road, Kengzi street, Pingshan District, Shenzhen City, Guangdong Province Patentee before: SHENZHEN LAPLACE ENERGY TECHNOLOGY Co.,Ltd. |