CN110515560A - A kind of effective storage mode for recorder - Google Patents

A kind of effective storage mode for recorder Download PDF

Info

Publication number
CN110515560A
CN110515560A CN201910794152.6A CN201910794152A CN110515560A CN 110515560 A CN110515560 A CN 110515560A CN 201910794152 A CN201910794152 A CN 201910794152A CN 110515560 A CN110515560 A CN 110515560A
Authority
CN
China
Prior art keywords
data
recorder
memory
page
write
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201910794152.6A
Other languages
Chinese (zh)
Inventor
邢菊
魏智汎
王展南
谢享奇
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Jiangsu Hua Cun Electronic Technology Co Ltd
Original Assignee
Jiangsu Hua Cun Electronic Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Jiangsu Hua Cun Electronic Technology Co Ltd filed Critical Jiangsu Hua Cun Electronic Technology Co Ltd
Priority to CN201910794152.6A priority Critical patent/CN110515560A/en
Priority to PCT/CN2019/105026 priority patent/WO2021035799A1/en
Publication of CN110515560A publication Critical patent/CN110515560A/en
Pending legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/06Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
    • G06F3/0601Interfaces specially adapted for storage systems
    • G06F3/0602Interfaces specially adapted for storage systems specifically adapted to achieve a particular effect
    • G06F3/061Improving I/O performance
    • G06F3/0611Improving I/O performance in relation to response time
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/06Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
    • G06F3/0601Interfaces specially adapted for storage systems
    • G06F3/0602Interfaces specially adapted for storage systems specifically adapted to achieve a particular effect
    • G06F3/0614Improving the reliability of storage systems
    • G06F3/0619Improving the reliability of storage systems in relation to data integrity, e.g. data losses, bit errors
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/06Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
    • G06F3/0601Interfaces specially adapted for storage systems
    • G06F3/0668Interfaces specially adapted for storage systems adopting a particular infrastructure
    • G06F3/0671In-line storage system
    • G06F3/0683Plurality of storage devices
    • G06F3/0685Hybrid storage combining heterogeneous device types, e.g. hierarchical storage, hybrid arrays

Landscapes

  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Human Computer Interaction (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Security & Cryptography (AREA)
  • Hall/Mr Elements (AREA)
  • Read Only Memory (AREA)

Abstract

The invention discloses a kind of effective storage modes for recorder, comprising the following steps: step 1: opening recorder, recorder start recording data;Step 2: key data is written in memory storage;Step 3: being written corresponding position in Nand-Flash memory for one page if data in memory storage writes full one page, if data does not write full one page and continues to receive data write-in in memory storage;Step 4: step 1 is repeated, the invention replaces the flash memory of the crucial a small amount of data of traditional record with memory storage FRAM, MRAM or RRAM, not only there is the speed of nanosecond, read or write speed greatly improves, there is non-volatile characteristic power down data not lose again, it is frequently stored than current any material be all more suitable for the keeping a record key data of instrument, few capacity data is frequently recorded to storage device very big help.

Description

A kind of effective storage mode for recorder
Technical field
The present invention relates to storage device technical field, specially a kind of effective storage mode for recorder.
Background technique
Traditional capsule information are recorded in NOR Flash, until the fast, durability with writing rate occurs in NAND Flash, can Become the replacer of NOR Flash by advantages such as property, the minimum read/write unit of NAND Flash is one page, and NOR Flash is big Mostly it is a byte, therefore some images or large capacity data can select to be recorded in NAND Flash, and frequently records key Few capacity data NOR Flash is more particularly suitable, so memory is usually or one NOR Flash or plug-in one embedded SPI NOR Flash, when recorder start recording data, crucial a small amount of data is first stored in Nor Flash, waits Nor Data writes full one page again by the corresponding page of these data write-in Nand Flash, after Nor Flash writes full by data also in Flash It needs to do erasing move, write-in next time data could be allowed.
Traditional storage mode key data is by flash memory storage, and the read or write speed of flash memory is lower, and power down data meeting It loses, it would therefore be highly desirable to which a kind of improved technology solves the problems, such as this in the presence of the prior art.
Summary of the invention
The purpose of the present invention is to provide a kind of effective storage mode for recorder, the crucial a small amount of data of traditional record Flash memory replaced with memory storage (FRAM, MRAM or RRAM), not only have the speed (nanosecond) of RAM, read or write speed ratio Fast 1000 times of flash memory, and there is non-volatile characteristic power down data not lose, all it is more suitable for the instrument that keeps a record than current any material Key data frequently store, few capacity data is frequently recorded to storage device very big help, to solve above-mentioned background technique The problem of middle proposition.
To achieve the above object, the invention provides the following technical scheme: a kind of effective storage mode for recorder, packet Include following steps:
Step 1: recorder, recorder start recording data are opened;
Step 2: key data is written in memory storage;
Step 3: corresponding positions in Nand-Flash memory are written into one page if data in memory storage writes full one page It sets, continues to receive data write-in if data in memory storage does not write full one page;
Step 4: step 1 is repeated.
Preferably, data are video data in the step 1.
Preferably, memory storage is nonvolatile memory in the step 2, and the memory storage is FRAM, MRAM or RRAM it is therein any one;
Wherein, the FRAM realizes that data store using the ferroelectric effect of ferroelectric crystal;
Wherein, the write operation of the MRAM is realized by the magnetization reversal of free layer in magnetic tunnel-junction;
Wherein, the RRAM be according to the difference for applying voltage on an metal oxide, make the resistance of material in high-impedance state and Corresponding change occurs between low resistance state, thus unlatching or blocks current flow channel, and various information are stored using this property Memory.
Preferably, the data of Nand-Flash are stored in memory cell in a manner of bit in the step 3, The NAND-flash reads and writes data as unit of page and wipes data in blocks.
Compared with prior art, the beneficial effects of the present invention are:
The flash memory of the crucial a small amount of data of traditional record is replaced with memory storage (FRAM, MRAM or RRAM), is not only had The speed (nanosecond) of RAM, read or write speed greatly improves, and has non-volatile characteristic power down data not lose, than as predecessor What material be all more suitable for keeping a record key data of instrument frequently stores, and frequently record to storage device and lacks capacity data and have very big side It helps.
Detailed description of the invention
Fig. 1 is the method for the present invention flow diagram.
Specific embodiment
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete Site preparation description, it is clear that described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.It is based on Embodiment in the present invention, it is obtained by those of ordinary skill in the art without making creative efforts every other Embodiment shall fall within the protection scope of the present invention.
Referring to Fig. 1, the present invention provides a kind of technical solution: a kind of effective storage mode for recorder, including with Lower step:
Step 1: recorder, recorder start recording data are opened;
Step 2: key data is written in memory storage;
Step 3: corresponding positions in Nand-Flash memory are written into one page if data in memory storage writes full one page It sets, continues to receive data write-in if data in memory storage does not write full one page;
Step 4: step 1 is repeated.
Wherein, data are video data in step 1,
Wherein, in step 2 memory storage be nonvolatile memory, the memory storage be FRAM, MRAM or RRAM it is therein any one;
Wherein, the FRAM realizes that data store using the ferroelectric effect of ferroelectric crystal;
Wherein, the write operation of the MRAM is realized by the magnetization reversal of free layer in magnetic tunnel-junction;
Wherein, the RRAM be according to the difference for applying voltage on an metal oxide, make the resistance of material in high-impedance state and Corresponding change occurs between low resistance state, thus unlatching or blocks current flow channel, and various information are stored using this property Memory.
Wherein, the data of Nand-Flash are stored in memory cell in a manner of bit in step 3, described NAND-flash reads and writes data as unit of page and wipes data in blocks.
Embodiment one:
The memory storage of the present embodiment uses FRAM.
Recorder is connect on pc by data line, opens the software that tests the speed, opens recorder, recorder start recording number According to recorder is directed at white metope, and Shi Changwei 2min, measuring the read/write period is 50ns.
Embodiment two:
The memory storage of the present embodiment uses MRAM.
Recorder is connect on pc by data line, opens the software that tests the speed, opens recorder, recorder start recording number According to recorder is directed at white metope, and Shi Changwei 2min, measuring the read/write period is 40ns.
Embodiment three:
The memory storage of the present embodiment uses RRAM.
Recorder is connect on pc by data line, opens the software that tests the speed, opens recorder, recorder start recording number According to recorder is directed at white metope, and Shi Changwei 2min, measuring the read/write period is 60ns.
In conclusion one ~ tri- side view equipment of embodiment, background and time are always, stored using different memory bodys Device, read or write speed reach nanosecond, and read or write speed greatly improves.
The flash memory of the crucial a small amount of data of traditional record is replaced by the present invention with FRAM, MRAM or RRAM, is not only had The speed (nanosecond) of RAM, 1000 times faster than flash memory of read or write speed, and there is non-volatile characteristic power down data not lose, than Current any material be all more suitable for the keeping a record key data of instrument frequently stores.
It although an embodiment of the present invention has been shown and described, for the ordinary skill in the art, can be with A variety of variations, modification, replacement can be carried out to these embodiments without departing from the principles and spirit of the present invention by understanding And modification, the scope of the present invention is defined by the appended.

Claims (4)

1. a kind of effective storage mode for recorder, it is characterised in that: the following steps are included:
Step 1: recorder, recorder start recording data are opened;
Step 2: key data is written in memory storage;
Step 3: corresponding positions in Nand-Flash memory are written into one page if data in memory storage writes full one page It sets, continues to receive data write-in if data in memory storage does not write full one page;
Step 4: step 1 is repeated.
2. a kind of effective storage mode for recorder according to claim 1, it is characterised in that: in the step 1 Data are video data.
3. a kind of effective storage mode for recorder according to claim 1, it is characterised in that: in the step 2 Memory storage is nonvolatile memory, the memory storage be FRAM, MRAM or RRAM it is therein any one;
Wherein, the FRAM realizes that data store using the ferroelectric effect of ferroelectric crystal;
Wherein, the write operation of the MRAM is realized by the magnetization reversal of free layer in magnetic tunnel-junction;
Wherein, the RRAM be according to the difference for applying voltage on an metal oxide, make the resistance of material in high-impedance state and Corresponding change occurs between low resistance state, thus unlatching or blocks current flow channel, and various information are stored using this property Memory.
4. a kind of effective storage mode for recorder according to claim 1, it is characterised in that: in the step 3 The data of Nand-Flash are stored in memory cell in a manner of bit, and the NAND-flash is read and write as unit of page Data and wipe data in blocks.
CN201910794152.6A 2019-08-27 2019-08-27 A kind of effective storage mode for recorder Pending CN110515560A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CN201910794152.6A CN110515560A (en) 2019-08-27 2019-08-27 A kind of effective storage mode for recorder
PCT/CN2019/105026 WO2021035799A1 (en) 2019-08-27 2019-09-10 Effective storage means for recorder

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201910794152.6A CN110515560A (en) 2019-08-27 2019-08-27 A kind of effective storage mode for recorder

Publications (1)

Publication Number Publication Date
CN110515560A true CN110515560A (en) 2019-11-29

Family

ID=68628033

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201910794152.6A Pending CN110515560A (en) 2019-08-27 2019-08-27 A kind of effective storage mode for recorder

Country Status (2)

Country Link
CN (1) CN110515560A (en)
WO (1) WO2021035799A1 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113419974A (en) * 2021-06-25 2021-09-21 长虹美菱股份有限公司 Control method for prolonging power-off memory times of refrigerator
CN113724662A (en) * 2021-07-08 2021-11-30 芯颖科技有限公司 Display module, display device and compensation method

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102013120A (en) * 2010-10-29 2011-04-13 浙江大学 Manufacturing recorder and method for checking data recording and data completeness thereof
CN201820275U (en) * 2010-10-29 2011-05-04 浙江大学 Manufacturing recording instrument
US20140195725A1 (en) * 2013-01-08 2014-07-10 Violin Memory Inc. Method and system for data storage
CN105193408A (en) * 2015-11-04 2015-12-30 恩识医疗科技(上海)有限公司 Attached dynamic electrocardiogram recorder and system thereof
CN107168639A (en) * 2016-03-08 2017-09-15 东芝存储器株式会社 The control method of storage system, information processing system and nonvolatile memory
CN108614666A (en) * 2016-12-09 2018-10-02 北京京存技术有限公司 Data block processing method based on NANDflash and device

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102013120A (en) * 2010-10-29 2011-04-13 浙江大学 Manufacturing recorder and method for checking data recording and data completeness thereof
CN201820275U (en) * 2010-10-29 2011-05-04 浙江大学 Manufacturing recording instrument
US20140195725A1 (en) * 2013-01-08 2014-07-10 Violin Memory Inc. Method and system for data storage
CN105193408A (en) * 2015-11-04 2015-12-30 恩识医疗科技(上海)有限公司 Attached dynamic electrocardiogram recorder and system thereof
CN107168639A (en) * 2016-03-08 2017-09-15 东芝存储器株式会社 The control method of storage system, information processing system and nonvolatile memory
CN108614666A (en) * 2016-12-09 2018-10-02 北京京存技术有限公司 Data block processing method based on NANDflash and device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113419974A (en) * 2021-06-25 2021-09-21 长虹美菱股份有限公司 Control method for prolonging power-off memory times of refrigerator
CN113419974B (en) * 2021-06-25 2024-02-06 长虹美菱股份有限公司 Control method for prolonging power-off memory times of refrigerator
CN113724662A (en) * 2021-07-08 2021-11-30 芯颖科技有限公司 Display module, display device and compensation method

Also Published As

Publication number Publication date
WO2021035799A1 (en) 2021-03-04

Similar Documents

Publication Publication Date Title
US11209989B2 (en) Zoned namespaces in solid-state drives
TWI333213B (en)
US7433220B2 (en) Two variable resistance elements being formed into a laminated layer with a common electrode and method of driving the same
US8032692B2 (en) System for accessing non-volatile memory
US7822913B2 (en) Emulation of a NAND memory system
TW200839773A (en) Wear-leveling management and file distribution management of hybrid density memory
CN109697026A (en) The storage system of storage equipment including host equipment and for executing clear operation
TWI652577B (en) Data storage device and method for operating non-volatile memory
JP4679528B2 (en) Semiconductor memory device with refresh trigger
CN102473455B (en) There is the nonvolatile memory of active ionic interface region
CN104347118B (en) For emulating the system and method for Electrically Erasable Read Only Memory
CN110515560A (en) A kind of effective storage mode for recorder
JP2010113742A (en) Nonvolatile semiconductor memory device and control method of the same
KR20100114086A (en) Multi-page parallel program flash memory
CN105931665A (en) Readout circuit and method for phase change memory
CN101796498B (en) Memory system
CN100505266C (en) Electrical element, memory device, and semiconductor integrated circuit
US8738848B2 (en) Methods, storage devices, and systems for promoting the endurance of non-volatile solid-state memory components
JP2011258229A (en) Memory system
CN103650055B (en) Record the method for data, memorizer and carry out the system recorded in memory
TWM320715U (en) Operating system for extending life-time of flash memory
CN101604291B (en) Method for improving data access reliability of non-volatile memory of multistage cell
TW200302488A (en) Method for writing data bits to a memory array
JP2006179560A (en) Reproducing method of storage element and memory circuit
CN106201932B (en) Method for writing data, memorizer control circuit unit and memory storage apparatus

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
RJ01 Rejection of invention patent application after publication

Application publication date: 20191129

RJ01 Rejection of invention patent application after publication