CN110504848A - A kind of input current peak value modulator approach of Switching Power Supply - Google Patents
A kind of input current peak value modulator approach of Switching Power Supply Download PDFInfo
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- CN110504848A CN110504848A CN201910672028.2A CN201910672028A CN110504848A CN 110504848 A CN110504848 A CN 110504848A CN 201910672028 A CN201910672028 A CN 201910672028A CN 110504848 A CN110504848 A CN 110504848A
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Classifications
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- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
- G05F1/10—Regulating voltage or current
- G05F1/625—Regulating voltage or current wherein it is irrelevant whether the variable actually regulated is ac or dc
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
- H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
- H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
- H02M3/10—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M3/145—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M3/155—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
- H02M3/156—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/02—Conversion of ac power input into dc power output without possibility of reversal
- H02M7/04—Conversion of ac power input into dc power output without possibility of reversal by static converters
- H02M7/12—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M7/21—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M7/217—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
Abstract
The present invention provides a kind of input current peak value modulator approach of Switching Power Supply, is based on booster switcher power driving circuit；A termination DC voltage Vin of charge and discharge inductance L1, the drain electrode of another termination switch metal-oxide-semiconductor M1；The end VCC of a termination driving chip T1 of output capacitance C3；The grid of switch metal-oxide-semiconductor M1 connects the end Gate of driving chip T1, and source electrode connects the end CS of driving chip T1；The source electrode of a termination switch metal-oxide-semiconductor M1 of current sense resistor Rs；Input current modulation circuit K2 includes operational amplifier G21；The normal phase input end of operational amplifier G21 meets modulation reference voltage Vref_dim；The value for modulating reference voltage Vref_dim is less than the saturation current and current sense resistor of inductance.The advantage is that can obtain balance between inductance peak point current and power factor, in the case where reducing some power factors, substantially reduce the peak value of input current, to save the scheme cost and volume of Switching Power Supply；It is reliable for operation, stable.
Description
Technical field
The invention discloses a kind of input current peak value modulator approaches of Switching Power Supply.
Background technique
Power module is for specific integrated circuit, digital signal processor, microprocessor, memory, field programmable gate
Array and other numbers or fictitious loads provide the power supply unit of power supply, are widely used in switching equipment, access device, mobile logical
The fields such as news, household electrical appliance, Industry Control.
Switching Power Supply is different from linear power supply, and Switching Power Supply is using switching metal-oxide-semiconductor work in turn-on and turn-off mode, this two
A mode has the characteristics of low-power consumption, therefore compares the saving energy, and efficiency is relatively high.Ideally, Switching Power Supply itself is
Electric energy will not be consumed, voltage pressure stabilizing is to penetrate the conducting of adjustment metal-oxide-semiconductor and the time turned off to reach.Opposite, linear power supply
During generating output voltage, metal-oxide-semiconductor work itself can also consume electric energy in saturation region.The high conversion effect of Switching Power Supply
Rate is the big advantage of one, therefore Switching Power Supply is widely used.
In the case where the input ac power such as alternating current of Switching Power Supply, output is to need setting for DC power supply mostly
It is standby, such as PC, charger etc., Switching Power Supply just carry out the conversion of voltage and current between the two.Using power factor
The Switching Power Supply of (PFC) power factor correction technology is corrected, power factor can be improved to 0.95~0.99, both administer power grid
Harmonic pollution, and improve the whole efficiency of power supply.This technology is known as active power factor correction APFC, is answered extensively
For in the development and application of Switching Power Supply.
In the Switching Power Supply scheme with APFC technology, in order to reach higher power factor, input current is designed
For the phase and amplitude for strictly following input ac voltage, the peak value of input current is present in the peak value of input voltage.Meanwhile
The peak value of input current is got higher with the increase of load again.In extreme circumstances, that is, the virtual value of input ac voltage
When minimum and load is maximum, the amplitude of input current reaches highest.In order to bear the input current of peak value, Switching Power Supply is answered
Had to the inductance using high saturation current with scheme, so that the expression of cost steeply risen with volume is caused, to very much
Application scheme causes inconvenience.
Summary of the invention
The present invention provides a kind of input current peak value modulator approaches of Switching Power Supply, can be in inductance peak point current and function
Balance is obtained between rate factor, in the case where reducing some power factors, substantially reduces the peak value of input current, to save
The scheme cost and volume of Switching Power Supply；It is reliable for operation, stable；To overcome defect in the prior art.
The present invention provides a kind of input current peak value modulator approach of Switching Power Supply, based on booster switcher power drives electricity
Road；Booster switcher power driving circuit includes, input capacitance C1, external capacitive C4, charge and discharge inductance L1, switch metal-oxide-semiconductor M1,
Current sense resistor Rs, output capacitance C3 and driving chip T1；Driving chip T1 has the end HV, the end Vcc, the end Gate, the end CS, FB
End, the end GND；A termination DC voltage Vin of input capacitance C1, other end ground connection；A termination direct current of charge and discharge inductance L1
Press Vin, the drain electrode of another termination switch metal-oxide-semiconductor M1；The HV of driving chip T1 terminates DC voltage Vin；The one of output capacitance C3
Terminate the end VCC of driving chip T1, other end ground connection；External capacitive C4 mono- terminates the end COMP of driving chip T1, another termination
Ground；The grid of switch metal-oxide-semiconductor M1 connects the end Gate of driving chip T1, and source electrode connects the end CS of driving chip T1；Current sense resistor
The source electrode of a termination switch metal-oxide-semiconductor M1 of Rs, other end ground connection；The input current peak value modulator approach of Switching Power Supply includes: perseverance
Flow control circuit K1, input current modulation circuit K2, logic control circuit K3, zero current cross detection circuit K4, metal-oxide-semiconductor driving electricity
Road K5, low-voltage power supply circuit K6；Low-voltage power supply circuit K6 inputs high pressure, output low pressure to the end Vcc from the end HV；Input current modulation
The one end circuit K2 is connect with the end CS of driving chip T1, and the other end is connect with an input terminal of logic control circuit K3；Zero passage
The output end of current detection circuit K4 is connect with another input terminal of logic control circuit K3；Constant-current control circuit K1 respectively with
The end FB, the connection of the end COMP, output end are connect with the third input terminal of logic control circuit K3；Logic control circuit K3 output end
It is connect with the input terminal of tube drive circuit K5；Metal-oxide-semiconductor driving circuit K5 output end and the end GATE and zero current cross detection circuit
K4 connection；Input current modulation circuit K2 includes operational amplifier G21；The normal phase input end of operational amplifier G21 connects modulation base
Quasi- voltage Vref_dim, negative-phase input connect the end CS of driving chip T1, and output end is connect with logic control circuit K3；Modulate base
The value of quasi- voltage Vref_dim is less than the saturation current and current sense resistor of inductance.
Further, the present invention provides a kind of input current peak value modulator approach of Switching Power Supply, can also have following spy
Sign: booster switcher power driving circuit further includes sustained diode 2, the first divider resistance R1, the second divider resistance R2；It is continuous
The anode of stream diode D2 connects the drain electrode of switch metal-oxide-semiconductor M1, and cathode connects one end of the first divider resistance R1；Second divider resistance R2
One termination the first divider resistance R1 the other end；Other end ground connection.
Further, the present invention provides a kind of input current peak value modulator approach of Switching Power Supply, can also have following spy
Sign: the junction of FB termination the first divider resistance R1 and the second divider resistance R2 of driving chip T1；The end GND of driving chip T1
Ground connection.
Further, the present invention provides a kind of input current peak value modulator approach of Switching Power Supply, can also have following spy
Sign: booster switcher power driving circuit further includes storage capacitor C2；Storage capacitor C2 is connected in parallel on the first divider resistance R1 and
The both ends of two divider resistance R2；One end of i.e. one the first divider resistance R1 of termination, the second divider resistance R2's of another termination is another
End.
Further, the present invention provides a kind of input current peak value modulator approach of Switching Power Supply, can also have following spy
Sign: constant-current control circuit K1 includes operational amplifier G11, operational amplifier G12, current source I13, capacitor C14；Operation amplifier
The normal phase input end of device G11 meets Isobarically Control reference voltage Vref_cv, and negative-phase input connects the end FB of driving chip T1, output
Terminate the end COMP；The input of current source I13 terminates the end VCC, the negative-phase input of output termination operational amplifier G12；Operation is put
The normal phase input end of big device G12 connects the end COMP, and output end is connect with logic control circuit K3, and output constant current controls signal norm_
off；The negative-phase input of a termination operational amplifier G12 of capacitor C14, other end ground connection.
Further, the present invention provides a kind of input current peak value modulator approach of Switching Power Supply, can also have following spy
Sign: logic control circuit K3 includes: d type flip flop DFF and/or door OR；Or an input terminal of door OR and input current modulation circuit
K2 connection, another input terminal are connect with constant-current control circuit K1, the end R of output termination d type flip flop DFF；The D of d type flip flop DFF
The end VCC is terminated, CK terminates zero current cross detection circuit K4；The end Q of d type flip flop DFF is connect with metal-oxide-semiconductor driving circuit K5.
Further, the present invention provides a kind of input current peak value modulator approach of Switching Power Supply, can also have following spy
Sign: metal-oxide-semiconductor driving circuit K5 includes: phase inverter INV51, metal-oxide-semiconductor MP52, metal-oxide-semiconductor MN53, resistance R54；Phase inverter INV51's
Input terminal is connect with logic control circuit K3；Output end is connect with the grid of the grid of metal-oxide-semiconductor MN53 and metal-oxide-semiconductor MP52；Metal-oxide-semiconductor
The source electrode of MP52 is connect with the end VCC；The drain electrode of metal-oxide-semiconductor MN53 is connected with the drain electrode of metal-oxide-semiconductor MP52, and tie point is as the end GATE；
A termination metal-oxide-semiconductor MN53 source electrode of resistance R54, another end termination GND.
Detailed description of the invention
Fig. 1 is one of the present embodiment booster switcher power driving circuit figure.
Fig. 2 is the High Power Factor booster switcher power supply applied current waveform diagram in the present embodiment.
Fig. 3 is the module principle figure of the driving chip in the present embodiment.
Fig. 4 is the module circuit diagram of the driving chip in the present embodiment.
Fig. 5 is the working waveform figure under no input current modulating mode.
Fig. 6 is the working waveform figure under input current modulating mode.
Fig. 7 is High Power Factor booster switcher mains input current modulation waveform figure.
Appended drawing reference:
RL-- loads RL
Rs-- current sense resistor
L1-- charge and discharge inductance
C1-- input capacitance
C2-- storage capacitor
C3-- output capacitance
C4-- external capacitive
T1-- driving chip
M1-- switchs metal-oxide-semiconductor
The divider resistance of R1-- the first
The divider resistance of R2-- the second
D2-- freewheeling diode
Vin-- input rectifying voltage
The electric current of Im-- inductance L1
The charging current of Is-- inductance L1
The discharge current of Id-- inductance L1
Im_pk-- inductance L1 peak point current
Iout-- exports electric current
The output signal of MOS_ON-- logic control circuit K3
The drain electrode of drn-- metal-oxide-semiconductor M1
Zcd-- inductive current zero cross signal
Ipk_off-- peak point current arriving signal
Norm_off-- constant-current control circuit output signal
K1-- constant-voltage control circuit
K2-- input current modulation circuit
K3-- logic control circuit
Vref_dim-- modulates reference voltage
Vref_cv-- Isobarically Control reference voltage
Dim_off-- input current modulation circuit output signal
Gate-- metal-oxide-semiconductor M1 gate drive signal
Specific embodiment:
Below in conjunction with the drawings and specific embodiments, the present invention will be further described.
Fig. 1 is one of the present embodiment booster switcher power driving circuit figure.
It is rectifier bridge, input capacitance C1, storage capacitor C2, outer as shown in Figure 1, a kind of booster switcher power driving circuit
Portion capacitor C4, charge and discharge inductance L1, sustained diode 2, the first divider resistance R1, the second divider resistance R2, switch metal-oxide-semiconductor M1,
Current sense resistor Rs, output capacitance C3 and driving chip T1.Driving chip T1 has the end HV, the end Vcc, the end Gate, the end CS, FB
End, the end GND.
DC voltage Vin is exported after exchange input ACin is rectified.A termination DC voltage Vin of input capacitance C1, separately
One end ground connection.A termination DC voltage Vin of charge and discharge inductance L1, the drain electrode of another termination switch metal-oxide-semiconductor M1.Driving chip T1
HV terminate DC voltage Vin.The anode of sustained diode 2 connects the drain electrode of switch metal-oxide-semiconductor M1, and cathode connects the first divider resistance
One end of R1.The other end of a first divider resistance R1 of termination of second divider resistance R2；Other end ground connection.Storage capacitor C2 is simultaneously
It is associated in the both ends of the first divider resistance R1 and the second divider resistance R2；One end of i.e. one the first divider resistance R1 of termination, the other end
Connect the other end of the second divider resistance R2.
The end VCC of a termination driving chip T1 of output capacitance C3, other end ground connection.The termination driving core of external capacitive C4 mono-
The end COMP of piece T1, other end ground connection.The grid of switch metal-oxide-semiconductor M1 connects the end Gate of driving chip T1, and source electrode connects driving chip
The end CS of T1.The source electrode of a termination switch metal-oxide-semiconductor M1 of current sense resistor Rs, other end ground connection.The end FB of driving chip T1
Connect the junction of the first divider resistance R1 and the second divider resistance R2.The end GND of driving chip T1 is grounded.Load RL is connected in parallel on storage
The both ends of energy capacitor C2, i.e. the two of one end and rectifier bridge output end connect.
As shown in Figure 1, driving chip T1 and other external components constitute a booster switcher power driving circuit,
Constant voltage output is provided for loading RL.Exchange input is rectified and after input capacitance C1 filtering, generates a DC voltage
Vin is to give load RL power supply.There is input voltage vin to charge it when switching metal-oxide-semiconductor M1 and opening, when switch metal-oxide-semiconductor
When M1 is turned off, charge and discharge inductance L1 charges to load RL.First divider resistance R1 and the second divider resistance R2 is output electricity
Divider resistance is pressed, the voltage division signal of output voltage is passed through the end FB transmission driving piece T1.Driving chip T1 is adjusted by the end Gate
The time that turns on and off of switch metal-oxide-semiconductor M1 come the load RL to different situations provides constant output voltage.
As shown in Fig. 2, under the application scheme of High Power Factor, the capacitance very little of input capacitance C1, driving chip T1 meeting
By the waveform modulated of the electric current Im of charge and discharge inductance L1 at the waveform for following input voltage vin, the peak value of the electric current Im of inductance L1
Electric current Im_pk reaches maximum when input voltage vin is to reach to peak value.Meanwhile the peak point current Im_pk of Im is with output electric current
The increase of Iout and increase.In certain extreme cases, excessively high peak point current Im_pk will cause inductance L1 current saturation.
Fig. 3 is the module principle figure of the driving chip in the present embodiment.
As shown in figure 3, driving chip includes: constant-current control circuit K1, input current modulation circuit K2, logic control circuit
K3, zero current cross detection circuit K4, metal-oxide-semiconductor driving circuit K5, low-voltage power supply circuit K6.
Low-voltage power supply circuit K6 inputs high pressure, output low pressure to the end Vcc, and energy storage in external capacitive C4 to drive from the end HV
All module defaults of other function module for power supply inside dynamic chip T1 all connect VCC.Input current one end modulation circuit K2 with
The end CS of driving chip T1 connects, and the other end is connect with an input terminal of logic control circuit K3.Input current modulation circuit
K2 detection and the peak point current for limiting inductance, and export peak point current arriving signal dim_off.Zero current cross detection circuit K4's
Output end is connect with another input terminal of logic control circuit K3.Zero current cross detection circuit K4 detects inductive current zero passage
Point, and export current zero-crossing signal zcd.Constant-current control circuit K1 is connect with the end FB, the end COMP respectively, output end and logic control
The third input terminal of circuit K3 connects.Constant-current control circuit K1 is reached constant voltage output by closed loop control and exports letter
Number norm_off.Logic control circuit K3 receives the output signal dim_off of input current modulation circuit, constant-voltage control circuit
The input terminal of the detection signal zcd of output signal norm_off and inductive current zero crossing, output end and tube drive circuit K5 connect
It connects, output signal MOS_ON.Metal-oxide-semiconductor driving circuit K5 access logic control circuit K3 output signal MOS_ON, output end with
The end GATE and the K4 connection of zero current cross detection circuit determine the switch state of metal-oxide-semiconductor M1 to achieve the purpose that constant voltage output.
As shown in figure 4, constant-current control circuit K1 includes, operational amplifier G11, operational amplifier G12, current source I13, electricity
Hold C14.The normal phase input end of operational amplifier G11 meets Isobarically Control reference voltage Vref_cv, and negative-phase input connects driving chip
The end FB of T1, the output termination end COMP.The input of current source I13 terminates the end VCC, the negative of output termination operational amplifier G12
Input terminal；The normal phase input end of operational amplifier G12 connects the end COMP, and output end is connect with logic control circuit K3, output constant current
Control signal norm_off.The negative-phase input of a termination operational amplifier G12 of capacitor C14, other end ground connection.
Input current modulation circuit K2 includes operational amplifier G21.The normal phase input end of operational amplifier G21 connects modulation base
Quasi- voltage Vref_dim, negative-phase input connect the end CS of driving chip T1, and output end is connect with logic control circuit K3, output letter
Number dim_off.
Logic control circuit K3 includes: d type flip flop DFF and/or door OR.Or an input terminal of door OR and input current tune
Circuit K2 connection processed, i.e., connect with the output end of operational amplifier G12, accesses the output signal dim_ of input current modulation circuit
off.Or another input terminal of door OR is connect with constant-current control circuit K1, i.e., connect, connect with the output end of operational amplifier G12
Enter constant-current control circuit K1 output signal norm_off.Or the end R of the output termination d type flip flop DFF of door OR.D type flip flop DFF's
D terminates the end VCC, and CK terminates the output signal zcd of zero current cross detection circuit K4；The end Q of d type flip flop DFF and metal-oxide-semiconductor driving electricity
Road K5 connection, output signal MOS_ON.
Metal-oxide-semiconductor driving circuit K5 includes: phase inverter INV51, metal-oxide-semiconductor MP52, metal-oxide-semiconductor MN53, resistance R54.
The input terminal of phase inverter INV51 is connect with logic control circuit K3, i.e., connect with the end Q of d type flip flop DFF, access
Logic control signal MOS_ON.The output end of phase inverter INV51 is connect with the grid of the grid of metal-oxide-semiconductor MN53 and metal-oxide-semiconductor MP52.
The source electrode of metal-oxide-semiconductor MP52 is connect with the end VCC.The drain electrode of metal-oxide-semiconductor MN53 is connected with the drain electrode of metal-oxide-semiconductor MP52, tie point conduct
The end GATE.A termination metal-oxide-semiconductor MN53 source electrode of resistance R54, another end termination GND.
When modulating reference voltage Vref_dim and being set to the larger value (so that permitted inductance peak point current is greater than electricity
The saturation current of sense), Im_pk will not must be worth by Vref_dim to be limited, the mould that system work at this time is modulated in no input current
Under formula, working waveform figure is as shown in Figure 5.When modulating reference voltage Vref_dim and being set to smaller value (so that being allowed
Inductance peak point current be less than inductance saturation current), Im_pk will be limited by the value of Vref_dim, and will not with
The increase of Vin and increase.Under the mode that input current is modulated, working waveform figure is as shown in Figure 6 for system work at this time.
As shown in fig. 7, the peak value of input current is limited at after current-modulation
That is Vref_dim=Im_pk×RS。
Im_pk is needed to be less than inductance saturation current, the value by setting Vref_dim is realized, that is, sets the value of Vref_dim
Less than the saturation current of inductance and the product of current sense resistor.
It is discussed in detail although the contents of the present invention have passed through above preferred embodiment, but it should be appreciated that above-mentioned
Description is not considered as limitation of the present invention.After those skilled in the art have read above content, for of the invention
A variety of modifications and substitutions all will be apparent.Any innovation and creation without departing from true spirit range, it is insubstantial
Replacement, deformation or the modification of property, fall within the scope of the present invention.
Claims (7)
1. a kind of input current peak value modulator approach of Switching Power Supply, it is characterised in that: based on booster switcher power drives electricity
Road；The booster switcher power driving circuit includes input capacitance C1, external capacitive C4, charge and discharge inductance L1, switch MOS
Pipe M1, current sense resistor Rs, output capacitance C3 and driving chip T1；The driving chip T1 has the end HV, the end Vcc, Gate
End, the end CS, the end FB, the end GND；
A termination DC voltage Vin of the input capacitance C1, other end ground connection；A termination DC voltage of charge and discharge inductance L1
Vin, the drain electrode of another termination switch metal-oxide-semiconductor M1；The HV of driving chip T1 terminates DC voltage Vin；One end of output capacitance C3
Connect the end VCC of driving chip T1, other end ground connection；External capacitive C4 mono- terminates the end COMP of driving chip T1, other end ground connection；
The grid of switch metal-oxide-semiconductor M1 connects the end Gate of driving chip T1, and source electrode connects the end CS of driving chip T1；Current sense resistor Rs's
The source electrode of one termination switch metal-oxide-semiconductor M1, other end ground connection；
Wherein, the input current peak value modulator approach of Switching Power Supply includes: constant-current control circuit (K1), input current modulation circuit
(K2), logic control circuit (K3), zero current cross detection circuit (K4), metal-oxide-semiconductor driving circuit (K5), low-voltage power supply circuit
(K6)；
Low-voltage power supply circuit (K6) inputs high pressure, output low pressure to the end Vcc from the end HV；Input current modulation circuit one end (K2) with
The end CS of driving chip T1 connects, and the other end is connect with an input terminal of logic control circuit (K3)；Zero current cross detection electricity
The output end on road (K4) is connect with another input terminal of logic control circuit (K3)；Constant-current control circuit (K1) respectively with FB
End, the connection of the end COMP, output end are connect with the third input terminal of logic control circuit (K3)；Logic control circuit (K3) output
End is connect with the input terminal of tube drive circuit (K5)；Metal-oxide-semiconductor driving circuit (K5) output end and the end GATE and zero current cross are examined
Slowdown monitoring circuit (K4) connection；
Input current modulation circuit (K2) includes operational amplifier G21；The normal phase input end of operational amplifier G21 connects modulation benchmark
Voltage Vref_dim, negative-phase input connect the end CS of driving chip T1, and output end is connect with logic control circuit (K3)；
The value for modulating reference voltage Vref_dim is less than the saturation current and current sense resistor of inductance.
2. the input current peak value modulator approach of Switching Power Supply as described in claim 1, it is characterised in that: the boost type is opened
Powered-down source driving circuit further includes sustained diode 2, the first divider resistance R1, the second divider resistance R2；
The anode of sustained diode 2 connects the drain electrode of switch metal-oxide-semiconductor M1, and cathode connects one end of the first divider resistance R1；Second partial pressure
The other end of a first divider resistance R1 of termination of resistance R2；Other end ground connection.
3. the input current peak value modulator approach of Switching Power Supply as claimed in claim 2, it is characterised in that:
Wherein, the junction of FB termination the first divider resistance R1 and the second divider resistance R2 of driving chip T1；Driving chip T1
The end GND ground connection.
4. the input current peak value modulator approach of Switching Power Supply as claimed in claim 2, it is characterised in that:
Wherein, the booster switcher power driving circuit further includes storage capacitor C2；
Storage capacitor C2 is connected in parallel on the both ends of the first divider resistance R1 and the second divider resistance R2；I.e. one the first divider resistance of termination
One end of R1, the other end of the second divider resistance R2 of another termination.
5. the input current peak value modulator approach of Switching Power Supply as described in claim 1, it is characterised in that:
Wherein, constant-current control circuit (K1) includes operational amplifier G11, operational amplifier G12, current source I13, capacitor C14；
The normal phase input end of operational amplifier G11 meets Isobarically Control reference voltage Vref_cv, and negative-phase input meets driving chip T1
The end FB, output termination the end COMP；The input of current source I13 terminates the end VCC, and the negative of output termination operational amplifier G12 is defeated
Enter end；The normal phase input end of operational amplifier G12 connects the end COMP, and output end is connect with logic control circuit (K3), output constant current
Control signal norm_off；The negative-phase input of a termination operational amplifier G12 of capacitor C14, other end ground connection.
6. the input current peak value modulator approach of Switching Power Supply as described in claim 1, it is characterised in that:
Wherein, logic control circuit (K3) includes: d type flip flop DFF and/or door OR；
Or an input terminal of door OR is connect with input current modulation circuit (K2), another input terminal and constant-current control circuit
(K1) it connects, the end R of output termination d type flip flop DFF；
The D of d type flip flop DFF terminates the end VCC, and CK terminates zero current cross detection circuit K4；The end Q of d type flip flop DFF and metal-oxide-semiconductor drive
Dynamic circuit (K5) connection.
7. the input current peak value modulator approach of Switching Power Supply as described in claim 1, it is characterised in that: metal-oxide-semiconductor driving electricity
Road (K5) includes: phase inverter INV51, metal-oxide-semiconductor MP52, metal-oxide-semiconductor MN53, resistance R54；
The input terminal of phase inverter INV51 is connect with logic control circuit (K3)；The grid and metal-oxide-semiconductor of output end and metal-oxide-semiconductor MN53
The grid of MP52 connects；The source electrode of metal-oxide-semiconductor MP52 is connect with the end VCC；The drain electrode of metal-oxide-semiconductor MN53 and the drain electrode of metal-oxide-semiconductor MP52 connect
It connects, tie point is as the end GATE；A termination metal-oxide-semiconductor MN53 source electrode of resistance R54, another end termination GND.
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