CN110504339A - Ultraviolet LED preparation method and ultraviolet LED - Google Patents
Ultraviolet LED preparation method and ultraviolet LED Download PDFInfo
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- CN110504339A CN110504339A CN201910801072.9A CN201910801072A CN110504339A CN 110504339 A CN110504339 A CN 110504339A CN 201910801072 A CN201910801072 A CN 201910801072A CN 110504339 A CN110504339 A CN 110504339A
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- 238000002360 preparation method Methods 0.000 title claims abstract description 44
- 230000004888 barrier function Effects 0.000 claims abstract description 190
- 238000006467 substitution reaction Methods 0.000 claims abstract description 52
- 229910052751 metal Inorganic materials 0.000 claims abstract description 42
- 239000002184 metal Substances 0.000 claims abstract description 42
- 238000002347 injection Methods 0.000 claims abstract description 31
- 239000007924 injection Substances 0.000 claims abstract description 31
- 239000000376 reactant Substances 0.000 claims abstract description 13
- 239000000758 substrate Substances 0.000 claims abstract description 10
- 239000010410 layer Substances 0.000 claims description 507
- 229910052739 hydrogen Inorganic materials 0.000 claims description 95
- 239000001257 hydrogen Substances 0.000 claims description 95
- 150000002431 hydrogen Chemical class 0.000 claims description 77
- 229910002704 AlGaN Inorganic materials 0.000 claims description 57
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 19
- 239000002344 surface layer Substances 0.000 claims description 6
- 230000001954 sterilising effect Effects 0.000 abstract description 12
- 238000001126 phototherapy Methods 0.000 abstract description 11
- 238000004659 sterilization and disinfection Methods 0.000 abstract description 11
- 230000006798 recombination Effects 0.000 abstract description 7
- 238000005215 recombination Methods 0.000 abstract description 7
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 191
- 229910021529 ammonia Inorganic materials 0.000 description 95
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 63
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 57
- 238000006243 chemical reaction Methods 0.000 description 55
- 239000012535 impurity Substances 0.000 description 21
- 238000010586 diagram Methods 0.000 description 14
- 230000004087 circulation Effects 0.000 description 13
- 229910052782 aluminium Inorganic materials 0.000 description 9
- 239000004411 aluminium Substances 0.000 description 9
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 8
- 229910052594 sapphire Inorganic materials 0.000 description 8
- 239000010980 sapphire Substances 0.000 description 8
- 229910000077 silane Inorganic materials 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 8
- 238000010348 incorporation Methods 0.000 description 7
- 230000009467 reduction Effects 0.000 description 7
- 230000000903 blocking effect Effects 0.000 description 5
- 230000008859 change Effects 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 229910002601 GaN Inorganic materials 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 239000000243 solution Substances 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 3
- 230000003247 decreasing effect Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000007711 solidification Methods 0.000 description 3
- 230000008023 solidification Effects 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 230000004913 activation Effects 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 125000004429 atom Chemical group 0.000 description 2
- 230000003139 buffering effect Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
- 238000000016 photochemical curing Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 238000005842 biochemical reaction Methods 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical group [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910052729 chemical element Inorganic materials 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 239000003814 drug Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 description 1
- 150000004678 hydrides Chemical class 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052716 thallium Inorganic materials 0.000 description 1
- BKVIYDNLLOSFOA-UHFFFAOYSA-N thallium Chemical compound [Tl] BKVIYDNLLOSFOA-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
- H01L33/145—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
- H01L33/325—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen characterised by the doping materials
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
A kind of ultraviolet LED preparation method provided by the invention and ultraviolet LED, it include: to be passed through source metal and V race reactant, grown buffer layer on substrate, the non-AltGal-tN layer mixed is grown on the buffer layer, N-type AlwGal-wN layers is grown on the non-AltGal-tN layer mixed, multi-quantum pit structure layer is grown on N-type AlwGal-wN layer, Ga atomic substitutions are carried out to multi-quantum pit structure layer, the growing P-type AltGa1-tN electronic barrier layer on multi-quantum pit structure layer, the growing P-type hole injection layer on p-type AltGa1-tN electronic barrier layer, to form ultraviolet LED.Carrier recombination efficiency is improved, to improve the luminous efficiency of ultraviolet LED, while also improving sterilization, phototherapy and cured efficiency.
Description
Technical field
The present invention relates to the growing method technical field of ultraviolet LED more particularly to a kind of promote Carrier recombination efficiency
Ultraviolet LED preparation method and ultraviolet LED.
Background technique
III-V compound be group-III element boron, aluminium, gallium, indium, thallium and V group element nitrogen in the periodic table of chemical element,
The compound that phosphorus, arsenic, antimony, bismuth form.The two-spot chemical combination that the III-V semiconductor usually said is made of Group IIIA and VA race element
Object.III-V compound semiconductor material has high carrier mobility and big forbidden bandwidth in luminescent device, high speed device
Part, high-temperature device, high-frequency element and high power device etc. are obtained more fast more are widely applied.
In the prior art, the AlGaN in III-V group semi-conductor material (aluminium gallium nitride alloy) based light-emitting diode (LED) can
The ultraviolet light of 200nm to 365nm is issued, this wave band ultraviolet light has the excellent properties such as sterilizing, phototherapy, photocuring.Wherein,
The UVC section ultraviolet LED of 200nm-280nm is as sterilization material most important in ultraviolet sterilization device, currently, being widely used in
The sterilization of body surface, empty gas and water etc..The UVB wave band of medical discovery simultaneously, 280nm-320nm has excellent phototherapy
Effect especially has extraordinary curative effect to treatment leucoderma, has been widely used in medicine field of phototherapy, and 320nm-
365nm wave band has the function of good photocuring, is commonly used for the solidifications fields such as manicure solidification, printing solidification.
However, causing since high Al contents AlGaN quantum well layer is because of the problems such as injecting difference in electronic blocking low efficiency, hole
It is also inclined to also result in sterilization, phototherapy and cured efficiency so that ultraviolet LED luminous efficiency is low for Carrier recombination low efficiency
It is low.
Summary of the invention
The present invention provides a kind of ultraviolet LED preparation method and ultraviolet LED, solves in the prior art due to high Al contents
The problems such as AlGaN quantum well layer is because of electronic blocking low efficiency, hole injection difference, leads to Carrier recombination low efficiency, so that purple
Outer LED luminous efficiency is low, also results in sterilization, phototherapy and cured efficiency also relatively low problem.
To solve the above-mentioned problems, a kind of ultraviolet LED preparation method provided by the invention, comprising:
It is passed through source metal and V race reactant, on substrate grown buffer layer；
The non-AltGal-tN layer mixed is grown on the buffer layer；
N-type AlwGal-wN layers is grown on the non-AltGal-tN layer mixed；
AlxGa1-xN/AlyGa1-yN multi-quantum pit structure layer is grown on N-type AlwGal-wN layer；
Ga atomic substitutions are carried out to AlxGa1-xN/AlyGa1-yN multi-quantum pit structure layer；
The growing P-type AltGa1-tN electronic barrier layer on AlxGa1-xN/AlyGa1-yN multi-quantum pit structure layer；
The growing P-type hole injection layer on p-type AltGa1-tN electronic barrier layer, to form ultraviolet LED.
As a kind of optional mode, ultraviolet LED preparation method provided by the invention,
AlxGa1-xN/AlyGa1-yN multi-quantum pit structure layer is grown on N-type AlwGal-wN layer includes:
Cycle alternation growth AlxGa1-xN quantum barrier layer and AlyGa1-yN quantum well layer, shape on N-type AlwGal-wN layer
At AlxGa1-xN/AlyGa1-yN multi-quantum pit structure layer；
Wherein, AlxGa1-xN quantum barrier layer and AlyGa1-yN quantum well layer are stacked,
First layer and the last layer are AlxGa1-xN quantum base in AlxGa1-xN/AlyGa1-yN multi-quantum pit structure layer
Layer；Or first layer and the last layer are AlyGa1-yN Quantum Well in AlxGa1-xN/AlyGa1-yN multi-quantum pit structure layer
Layer.
As a kind of optional mode, ultraviolet LED preparation method provided by the invention,
Carrying out Ga atomic substitutions to AlxGa1-xN/AlyGa1-yN multi-quantum pit structure layer includes:
Stopping is passed through source metal and V race reactant, hydrogen is passed through, to AlxGa1-xN quantum barrier layer and/or AlyGa1-yN
Quantum well layer carries out Ga atomic substitutions, and Al component is formed in AlxGa1-xN quantum barrier layer and/or AlyGa1-yN quantum well layer
The AlGaN layer of gradual change, wherein Al component internal in AlGaN layer is less than the Al component on AlGaN layer surface layer.
As a kind of optional mode, ultraviolet LED preparation method provided by the invention,
The Al component of AlGaN layer is greater than the Al of AlGaN layer in AlyGa1-yN quantum well layer in AlxGa1-xN quantum barrier layer
Component.
As a kind of optional mode, ultraviolet LED preparation method provided by the invention,
Growing P-type AltGa1-tN electronic barrier layer includes: on AlxGa1-xN/AlyGa1-yN multi-quantum pit structure layer
Storied length at least two layers of p-type AltGa1-tN electronics on AlxGa1-xN/AlyGa1-yN multi-quantum pit structure layer upper layer
Barrier layer.
As a kind of optional mode, ultraviolet LED preparation method provided by the invention,
Storied length at least two layers of p-type AltGa1-tN electronics on AlxGa1-xN/AlyGa1-yN multi-quantum pit structure layer upper layer
Barrier layer carries out Ga atomic substitutions
Stopping be passed through source metal and V race reactant, be passed through hydrogen, at least one layer of p-type AltGa1-tN electronic barrier layer into
Row Ga atomic substitutions form the AlGaN layer of Al content gradually variational, wherein in AlGaN layer in p-type AltGa1-tN electronic barrier layer
Internal Al component is less than the Al component on AlGaN layer surface layer.
As a kind of optional mode, ultraviolet LED preparation method provided by the invention,
AlxGa1-xN/AlyGa1-yN multi-quantum pit structure layer with a thickness of 5-50nm.
As a kind of optional mode, ultraviolet LED preparation method provided by the invention,
The time for being passed through hydrogen is 5s-20min.
As a kind of optional mode, ultraviolet LED preparation method provided by the invention,
The cycle-index of alternating growth AlxGa1-xN quantum barrier layer and AlyGa1-yN quantum well layer is 2-100 times.
The present invention also provides a kind of ultraviolet LED, ultraviolet LED is prepared using above-mentioned ultraviolet LED preparation method.
A kind of ultraviolet LED preparation method provided by the invention and ultraviolet LED, by being passed through source metal and V race reactant, In
Grown buffer layer on substrate grows the non-AltGal-tN layer mixed on the buffer layer, grows N-type on the non-AltGal-tN layer mixed
AlwGal-wN layers, AlxGa1-xN/AlyGa1-yN multi-quantum pit structure layer is grown on N-type AlwGal-wN layer, to AlxGa1-
XN/AlyGa1-yN multi-quantum pit structure layer carries out Ga atomic substitutions, in AlxGa1-xN/AlyGa1-yN multi-quantum pit structure layer
Upper growing P-type AltGa1-tN electronic barrier layer, the growing P-type hole injection layer on p-type AltGa1-tN electronic barrier layer, with shape
At ultraviolet LED.Improve Carrier recombination efficiency, to improve the luminous efficiency of ultraviolet LED, while also improve sterilization,
Phototherapy and cured efficiency.
Detailed description of the invention
In order to more clearly explain the embodiment of the invention or the technical proposal in the existing technology, to embodiment or will show below
There is attached drawing needed in technical description to make simply to introduce, it should be apparent that, the accompanying drawings in the following description is this hair
Bright some embodiments for those of ordinary skill in the art without any creative labor, can be with
It obtains other drawings based on these drawings.
Fig. 1 is a kind of flow chart for ultraviolet LED preparation method that the embodiment of the present invention one provides；
Fig. 2 is a kind of structural schematic diagram of ultraviolet LED provided by Embodiment 2 of the present invention；
Fig. 3 is a kind of structural schematic diagram of ultraviolet LED ideal energy band provided by Embodiment 2 of the present invention；
Fig. 4 is that a kind of ultraviolet LED provided by Embodiment 2 of the present invention carries out Ga original to Quantum Well and the second electronic barrier layer
Band structure schematic diagram after sub- replacement Treatment；
Fig. 5 is that a kind of ultraviolet LED provided by Embodiment 2 of the present invention carries out Ga original to Quantum Well and the first electronic barrier layer
Band structure schematic diagram after sub- replacement Treatment；
Fig. 6 is that a kind of ultraviolet LED provided by Embodiment 2 of the present invention builds quantum and the first electronic barrier layer carries out Ga original
Band structure schematic diagram after sub- replacement Treatment；
Fig. 7 is that a kind of ultraviolet LED provided by Embodiment 2 of the present invention builds quantum and the second electronic barrier layer carries out Ga original
Band structure schematic diagram after sub- replacement Treatment.
Appended drawing reference
10- substrate；
20- buffer layer；
The non-AltGal-tN layer mixed of 30-；
AlwGal-wN layers of 40-N type；
50- multi-quantum pit structure layer；
60-P type AltGa1-tN electronic barrier layer；
70-P type hole injection layer.
Specific embodiment
With reference to the attached drawing in the embodiment of the present invention, technical solution in the embodiment of the present invention carries out clear, complete
Ground description, it is clear that described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.Based on this
Embodiment in invention, every other reality obtained by those of ordinary skill in the art without making creative efforts
Example is applied, shall fall within the protection scope of the present invention.
In addition, term " first ", " second " are used for descriptive purposes only and cannot be understood as indicating or suggesting relative importance
Or implicitly indicate the quantity of indicated technical characteristic.Define " first " as a result, the feature of " second " can be expressed or
Implicitly include one or more of the features.
Embodiment one
Fig. 1 is the flow diagram for the ultraviolet LED preparation method that the embodiment of the present invention one provides.As shown in Figure 1, of the invention
A kind of ultraviolet LED preparation method that embodiment one provides, comprising:
S101, it is passed through source metal and V race reactant, on substrate grown buffer layer.
Specifically, when pressure is 400mbar, being passed through source metal when reaction chamber temperature is increased to 800-950 DEG C and ammonia being anti-
2-3min is answered, source metal and ammonia decompose concurrent biochemical reaction at this temperature, are formed with a thickness of the unformed slow of 25nm
Rush grown layer.When reaction chamber temperature is increased to 1250-1350 DEG C, when pressure is down to 100mbar, be passed through hydrogen, source metal and
Ammonia 90-180min forms the undoped buffering grown layer of 1500-3000nm.
Specifically, source metal reactant and buffer layer can have following properties: 1) metal can be resolved at high temperature
Atom；2) metallic atom can react with N atom, form unformed buffer layer；3) thickness of buffer layer can for 0~
5000nm.Typical cushioning layer material is AlN.
Wherein, source metal can be the metallo-organic compounds such as trimethyl aluminium, trimethyl gallium.Substrate can be sapphire,
The one of which such as silicon, silicon carbide.
Optionally, growth apparatus can be equipment of metal organic chemical vapor deposition (MOCVD), molecular beam epitaxial device
(MBE), the one of which in hydride gas-phase epitaxy equipment (HVPE).
S102, the non-AltGal-tN layer mixed is grown on the buffer layer.
Specifically, reaction chamber temperature is reduced to 1140 DEG C, pressure maintains 200mbar, is passed through hydrogen, source metal and ammonia
Gas 60-90min, the undoped AltGal-tN that growth a layer thickness is 1000-1500nm on undoped buffering grown layer
Layer.
S103, N-type AlwGal-wN layers is grown on the non-AltGal-tN layer mixed.
Specifically, the temperature of reaction chamber, pressure remain unchanged, it is passed through hydrogen, source metal and ammonia 60-120min, is mixed
Silane grows AlwGal-wN layers of N-type that a layer thickness is 1000-2000nm on the non-AltGal-tN layer mixed.
S104, AlxGa1-xN/AlyGa1-yN multi-quantum pit structure layer is grown on N-type AlwGal-wN layer.
Specifically, reaction chamber temperature, pressure remain unchanged, it is passed through hydrogen, source metal and ammonia, at AlwGal-wN layers of N-type
Upper growth AlxGa1-xN/AlyGa1-yN multi-quantum pit structure layer.
As a kind of achievable embodiment, which does following knot
Structure design:
Cycle alternation growth AlxGa1-xN quantum barrier layer and AlyGa1-yN quantum well layer, shape on N-type AlwGal-wN layer
At AlxGa1-xN/AlyGa1-yN multi-quantum pit structure layer.
Wherein, AlxGa1-xN quantum barrier layer and AlyGa1-yN quantum well layer are stacked,
First layer and the last layer are AlxGa1-xN quantum base in AlxGa1-xN/AlyGa1-yN multi-quantum pit structure layer
Layer；Or first layer and the last layer are AlyGa1-yN Quantum Well in AlxGa1-xN/AlyGa1-yN multi-quantum pit structure layer
Layer.
S105, Ga atomic substitutions are carried out to AlxGa1-xN/AlyGa1-yN multi-quantum pit structure layer.
Specifically, stopping being passed through source metal and ammonia, it is passed through hydrogen, to AlxGa1-xN/AlyGa1-yN multiple quantum wells knot
Structure layer carries out Ga atomic substitutions.
As a kind of achievable embodiment, it is former that Ga is carried out to AlxGa1-xN/AlyGa1-yN multi-quantum pit structure layer
Son is replaced
Stopping is passed through source metal and V race reactant, hydrogen is passed through, to AlxGa1-xN quantum barrier layer and/or AlyGa1-yN
Quantum well layer carries out Ga atomic substitutions, and Al component is formed in AlxGa1-xN quantum barrier layer and/or AlyGa1-yN quantum well layer
The AlGaN layer of gradual change, wherein Al component internal in AlGaN layer is less than the Al component on AlGaN layer surface layer.
It should be noted that above-mentioned steps (4) and step (5) are to grow AlxGa1-xN/ on AlwGal-wN layers of N-type
AlyGa1-yN multi-quantum pit structure layer.And to the AlxGa1-xN amount in AlxGa1-xN/AlyGa1-yN multi-quantum pit structure layer
Sub- barrier layer or AlyGa1-yN quantum well layer carry out high temperature Ga atomic substitutions, and to form superelevation barrier energy band, this barrier energy band can
Effectively stop the spilling of electronics and reduce hole activation energy, improves hole injection efficiency.
For example, growth AlxGa1-xN/AlyGa1-yN multi-quantum pit structure layer and carry out the processes of Ga atomic substitutions can be with
Are as follows: after one layer of AlxGa1-xN quantum barrier layer of growth, stopping is passed through source metal and ammonia, is passed through hydrogen for a period of time, carries out
The Ga atomic substitutions of AlxGa1-xN quantum barrier layer, form the AlGaN layer of Al content gradually variational on AlxGa1-xN quantum barrier layer, then lead to
Enter hydrogen, source metal and ammonia, grow AlyGa1-yN quantum well layer, repeats above step, form the AlxGa1-xN/ in period
AlyGa1-yN multi-quantum pit structure layer.
It optionally, is cycle growth structure, periodicity 2- for AlxGa1-xN/AlyGa1-yN multi-quantum pit structure
100 times.Meanwhile the thickness control of AlxGa1-xN/AlyGa1-yN multi-quantum pit structure layer is in range (wherein, the trap of 5-50nm
Width is 1-10nm, and base width is 5-40nm), to the AlxGa1-xN quantum in AlxGa1-xN/AlyGa1-yN multi-quantum pit structure layer
When barrier layer or AlyGa1-yN quantum well layer carry out high temperature Ga atomic substitutions, need to stop to be passed through source metal and ammonia and be passed through hydrogen
Gas, the time for being passed through hydrogen control in 5s-20min.
Further, the Al component of AlGaN layer is greater than in AlyGa1-yN quantum well layer in AlxGa1-xN quantum barrier layer
The Al component of AlGaN layer.
Specifically, the AlGaN layer of the Al component of gradual change gradually rises electronic barrier, blocking electronics can be then played
Effect, while hole barrier is gradually decreased, is conducive to the promotion of hole injection efficiency.
S106, the growing P-type AltGa1-tN electronic barrier layer on AlxGa1-xN/AlyGa1-yN multi-quantum pit structure layer.
Specifically, the temperature and pressure of reaction chamber remains unchanged, it is passed through hydrogen, source metal and ammonia, in AlxGa1-xN/
Growing P-type AltGa1-tN electronic barrier layer on AlyGa1-yN multi-quantum pit structure layer.The purpose of this layer can be used as electronics resistance
Barrier can simultaneously serve as high carrier migration insert layer, and the thickness of this layer can be 0-100nm, doping concentration 1x1017-
1x1020cm-3。
As a kind of achievable implementation, the structure of p-type AltGa1-tN electronic barrier layer be may is that
Storied length at least two layers of p-type AltGa1-tN electronics on AlxGa1-xN/AlyGa1-yN multi-quantum pit structure layer upper layer
Barrier layer.
As a kind of optional implementation, to storied on AlxGa1-xN/AlyGa1-yN multi-quantum pit structure layer upper layer
Long at least two layers of p-type AltGa1-tN electronic barrier layer carries out Ga atomic substitutions and includes:
Stopping be passed through source metal and V race reactant, be passed through hydrogen, at least one layer of p-type AltGa1-tN electronic barrier layer into
Row Ga atomic substitutions form the AlGaN layer of Al content gradually variational, wherein in AlGaN layer in p-type AltGa1-tN electronic barrier layer
Internal Al component is less than the Al component on AlGaN layer surface layer.
Specifically, for example: reaction chamber temperature, pressure being remained unchanged, hydrogen, source metal and ammonia are passed through, in AlxGa1-
On xN/AlyGa1-yN multi-quantum pit structure layer grow first layer electronic barrier layer, after the completion of growth, stopping be passed through source metal and
Ammonia is passed through hydrogen, carries out the Ga atomic substitutions of first layer electronic barrier layer, is passed through hydrogen, source metal and ammonia later, grows
Second layer electronic barrier layer, and repeat the above steps, to form the high barrier P-type AltGa1-tN electronic barrier layer of periodic structure
With low barrier P-type AltGa1-tN electronic barrier layer, to form superelevation barrier energy band, and then effectively stop the spilling and drop of electronics
Low low hole activation energy, further increases hole injection efficiency.
S107, the growing P-type hole injection layer on p-type AltGa1-tN electronic barrier layer, to form ultraviolet LED.
Specifically, the thickness of this layer can be 5-500nm, hole doping concentration is 1x1017-5x1020cm-3.Wherein, p-type
Hole injection layer may include AlwGa1-wN layers of p-type, and p-type GaN layer is AlwGa1-wN/GaN layers periodical, periodical p-type
AlzGa1-zN/AlwGa1-wN layers, periodical p-type AlzGa1-zN/AlwGa1-wN/Ga.
The ultraviolet LED preparation method that the embodiment of the present invention one provides, by being passed through source metal and V race reactant, in substrate
Upper grown buffer layer grows the non-AltGal-tN layer mixed on the buffer layer, grows N-type on the non-AltGal-tN layer mixed
AlwGal-wN layers, AlxGa1-xN/AlyGa1-yN multi-quantum pit structure layer is grown on N-type AlwGal-wN layer, to AlxGa1-
XN/AlyGa1-yN multi-quantum pit structure layer carries out Ga atomic substitutions, in AlxGa1-xN/AlyGa1-yN multi-quantum pit structure layer
Upper growing P-type AltGa1-tN electronic barrier layer, the growing P-type hole injection layer on p-type AltGa1-tN electronic barrier layer, with shape
At ultraviolet LED.Improve Carrier recombination efficiency, to improve the luminous efficiency of ultraviolet LED, while also improve sterilization,
Phototherapy and cured efficiency.
On the basis of the above embodiments, below to the second electronics of AlyGa1-yN quantum well layer and p-type AltGa1-tN
It is illustrated for the LED preparation method of barrier layer progress Ga atomic substitutions, the preparation process of ultraviolet LED includes the following steps:
(1) MOCVD reaction chamber temperature rises to 900 DEG C, pressure 400mbar, while being passed through trimethyl aluminium (150ml/min)
It with ammonia 3min, reacts on sapphire, forms the AlN buffer layer of 25nm；Temperature is improved to 1250 DEG C, pressure reduction
To 100mbar, it is passed through hydrogen, trimethyl aluminium (400ml/min) and ammonia 90min, forms the undoped AlN layer of 1500nm.
(2) temperature is reduced to 1140 DEG C, pressure maintains 200mbar, be passed through hydrogen, trimethyl gallium (100ml/min),
Trimethyl aluminium (360ml/min) and ammonia 60min.Growth a layer thickness is that the non-of 1000nm mixes AltGa1-tN layers, AltGa1-
The Al group of tN is divided into 50%.
(3) reaction chamber temperature, pressure are constant, are passed through hydrogen, trimethyl gallium (100ml/min), trimethyl aluminium (360ml/
Min) and ammonia 90min, and silane is mixed, growth a layer thickness is AlwGal-wN layers of N-type of 1500nm, N-type AlwGal-wN
The Al group of layer is divided into 50%, and the doping concentration that AlwGal-wN layers of N-type is 1 × 1019cm-3.
(4) temperature is maintained 1140 DEG C, pressure is adjusted to 200mbar, is passed through hydrogen, trimethyl gallium (50ml/min), three
Aluminium methyl (200ml/min) and ammonia, grow AlxGa1-xN quantum barrier layer, and the Al group of AlxGa1-xN quantum barrier layer is divided into
56%, Si impurity is mixed, doping concentration is 1 × 1018cm-3, growth time 50s, with a thickness of 10nm.
(5) reaction chamber temperature, pressure remain unchanged, and are passed through hydrogen, trimethyl gallium (50ml/min), trimethyl aluminium (50ml/
Min) and ammonia, growth AlyGa1-yN Quantum Well, the Al group of AlyGa1-yN quantum well layer are divided into 35%, growth time 10s,
With a thickness of 1nm.
(6) source metal and ammonia stopping are passed through after the completion of growing, and are passed through hydrogen 5s, carries out AlyGa1-yN Quantum Well
The Ga atomic substitutions of layer, form the AlGaN of Al content gradually variational on AlyGa1-yN quantum well layer, and Al component is thin from 35% to 55%
Thickness degree about 0.1nm.
(7) repeat step 4 to step 62 circulations, form the quantum well structure in 2 periods.
(8) temperature of reaction chamber remains unchanged, and is passed through hydrogen, trimethyl gallium (50ml/min), trimethyl aluminium (200ml/
Min) and ammonia, growth AlxGa1-xN quantum barrier layer, the Al group of AlxGa1-xN quantum barrier layer are divided into 56%, and growth time is
50s grows the last layer quantum and builds with a thickness of 10nm.
(9) reaction chamber temperature, pressure remain unchanged, and are passed through hydrogen, trimethyl gallium (50ml/min), trimethyl aluminium
(250ml/min) and ammonia grow first layer p-type AltGa1-tN electronic barrier layer, the Al of p-type AltGa1-tN electronic barrier layer
Group is divided into 65%, mixes Mg impurity, and the doping concentration of Mg is 1 × 1019cm-3.Growth time is 30s, with a thickness of 7nm.
(10) reaction chamber temperature, pressure remain unchanged, and are passed through hydrogen, trimethyl gallium (50ml/min), trimethyl aluminium
(80ml/min) and ammonia grow second layer p-type AltGa1-tN electronic barrier layer, the Al of p-type AltGa1-tN electronic barrier layer
Group is divided into 40%, mixes Mg impurity, and the doping concentration of Mg is 1 × 1019cm-3, growth time 30s, with a thickness of 5nm.
(11) stop being passed through source metal and ammonia after the completion of growth, be passed through hydrogen 5s, carry out second layer p-type AltGa1-tN
The Ga atomic substitutions of electronic barrier layer form the AlGaN, Al of Al content gradually variational on second layer p-type AltGa1-tN electronic barrier layer
Component is from 40% to 55%, thickness of thin layer about 0.1nm.
(12) repeat step 9 to step 11 8 circulations, form the high barrier P-type AltGa1-tN electronics in 8 periods
Barrier layer and low barrier P-type AltGa1-tN electronic barrier layer.
(13) reaction chamber temperature, pressure remain unchanged, and are passed through hydrogen, trimethyl gallium (50ml/min), trimethyl aluminium
(50ml/min) and ammonia grow AlGaN hole injection layer, and the Al group of AlGaN hole injection layer is divided into 35%, and incorporation Mg is miscellaneous
Matter, the doping concentration of Mg are 2 × 1019cm-3, growth time 1min, with a thickness of 30nm.
The growth of this ultraviolet LED terminates, and is processed into 1mm2The chip of size, is passed through the electric current of 350mA, wavelength 280nm, bright
Degree is 120mW, and external quantum efficiency is more than 5%, forward voltage 6.5V.
On the basis of the above embodiments, below to the first electronics of AlxGa1-xN quantum barrier layer and p-type AltGa1-tN
It is illustrated for the LED preparation method of barrier layer progress Ga atomic substitutions, the preparation process of ultraviolet LED includes the following steps:
(1) MOCVD reaction chamber temperature rises to 900 DEG C, pressure 400mbar, while being passed through trimethyl aluminium (150ml/min)
It with ammonia 3min, reacts on sapphire, forms the AlN buffer layer of 25nm；Temperature is improved to 1250 DEG C, pressure reduction
To 100mbar, it is passed through hydrogen, trimethyl aluminium (400ml/min) and ammonia 120min, forms the undoped AlN layer of 2000nm.
(2) temperature is reduced to 1140 DEG C, pressure maintains 200mbar, be passed through hydrogen, trimethyl gallium (100ml/min),
Trimethyl aluminium (360ml/min) and ammonia 60min.Growth a layer thickness is that the non-of 1000nm mixes AltGa1-tN layers, AltGa1-
The Al group of tN is divided into 50%.
(3) reaction chamber temperature, pressure are constant, are passed through hydrogen, trimethyl gallium (100ml/min), trimethyl aluminium (360ml/
Min) and ammonia 60min, and silane is mixed, growth a layer thickness is AlwGal-wN layers of N-type of 1000nm, N-type AlwGal-wN
The Al group of layer is divided into 50%, and the doping concentration that AlwGal-wN layers of N-type is 1 × 1019cm-3。
(4) temperature is maintained 1140 DEG C, pressure is adjusted to 200mbar, is passed through hydrogen, trimethyl gallium (50ml/min), three
Aluminium methyl (200ml/min) and ammonia, grow AlxGa1-xN quantum barrier layer, and the Al group of AlxGa1-xN quantum barrier layer is divided into
56%, Si impurity is mixed, doping concentration is 2 × 1018cm-3, growth time 50s, with a thickness of 10nm.
(5) source metal and ammonia stopping are passed through after the completion of growing, and are passed through hydrogen 3min, carries out AlxGa1-xN quantum
The Ga atomic substitutions of barrier layer, formed AlxGa1-xN quantum barrier layer on Al content gradually variational AlGaN, Al component from 56% to 95%,
Thickness of thin layer about 3nm.
(6) reaction chamber temperature, pressure remain unchanged, and are passed through hydrogen, trimethyl gallium (50ml/min), trimethyl aluminium (50ml/
Min) and ammonia, growth AlyGa1-yN Quantum Well, the Al group of AlyGa1-yN quantum well layer are divided into 35%, growth time 30s,
With a thickness of 3nm.
(7) repeat step 4 to step 66 circulations, form the quantum well structure in 6 periods.
(8) temperature of reaction chamber remains unchanged, and is passed through hydrogen, trimethyl gallium (50ml/min), trimethyl aluminium (200ml/
Min) and ammonia, growth AlxGa1-xN quantum barrier layer, the Al group of AlxGa1-xN quantum barrier layer are divided into 56%, and growth time is
50s grows the last layer quantum and builds with a thickness of 10nm.
(9) reaction chamber temperature, pressure remain unchanged, and are passed through hydrogen, trimethyl gallium (50ml/min), trimethyl aluminium
(250ml/min) and ammonia grow first layer p-type AltGa1-tN electronic barrier layer, the Al of p-type AltGa1-tN electronic barrier layer
Group is divided into 65%, mixes Mg impurity, and the doping concentration of Mg is 1 × 1019cm-3.Growth time is 15s, with a thickness of 3.5nm.
(10) stop being passed through source metal and ammonia after the completion of growth, be passed through hydrogen 30s, carry out first layer p-type AltGa1-tN
The Ga atomic substitutions of electronic barrier layer form the AlGaN, Al of Al content gradually variational on first layer p-type AltGa1-tN electronic barrier layer
Component is from 65% to 80%, thickness of thin layer about 0.5nm.
(11) reaction chamber temperature, pressure remain unchanged, and are passed through hydrogen, trimethyl gallium (50ml/min), trimethyl aluminium
(80ml/min) and ammonia grow second layer p-type AltGa1-tN electronic barrier layer, the Al of p-type AltGa1-tN electronic barrier layer
Group is divided into 40%, mixes Mg impurity, and the doping concentration of Mg is 1 × 1019cm-3, growth time 30s, with a thickness of 5nm.
(12) repeat step 9 to step 11 5 circulations, form the high barrier P-type AltGa1-tN electronics in 5 periods
Barrier layer and low barrier P-type AltGa1-tN electronic barrier layer.
(13) reaction chamber temperature, pressure remain unchanged, and are passed through hydrogen, trimethyl gallium (50ml/min), trimethyl aluminium
(50ml/min) and ammonia grow AlGaN hole injection layer, and the Al group of AlGaN hole injection layer is divided into 35%, and incorporation Mg is miscellaneous
Matter, the doping concentration of Mg are 2 × 1019cm-3, growth time 10min, with a thickness of 60nm.
The growth of this ultraviolet LED terminates, and is processed into 1mm2The chip of size, is passed through the electric current of 350mA, wavelength 280nm, bright
Degree is 125mW, and external quantum efficiency is more than 5%, forward voltage 6.5V.
On the basis of the above embodiments, below to the first electronics of AlyGa1-yN quantum well layer and p-type AltGa1-tN
It is illustrated for the LED preparation method of barrier layer progress Ga atomic substitutions, the preparation process of ultraviolet LED includes the following steps:
(1) MOCVD reaction chamber temperature rises to 800 DEG C, pressure 400mbar, while being passed through trimethyl aluminium (150ml/min)
It with ammonia 3min, reacts on sapphire, forms the AlN buffer layer of 25nm；Temperature is improved to 1250 DEG C, pressure reduction
To 100mbar, it is passed through hydrogen, trimethyl aluminium (400ml/min) and ammonia 120min, forms the undoped AlN layer of 2000nm.
(2) temperature is reduced to 1140 DEG C, pressure maintains 200mbar, be passed through hydrogen, trimethyl gallium (100ml/min),
Trimethyl aluminium (360ml/min) and ammonia 60min.Growth a layer thickness is that the non-of 1000nm mixes AltGa1-tN layers, AltGa1-
The Al group of tN is divided into 50%.
(3) reaction chamber temperature, pressure are constant, are passed through hydrogen, trimethyl gallium (100ml/min), trimethyl aluminium (360ml/
Min) and ammonia 60min, and silane is mixed, growth a layer thickness is AlwGal-wN layers of N-type of 1000nm, N-type AlwGal-wN
The Al group of layer is divided into 50%, and the doping concentration that AlwGal-wN layers of N-type is 1.5 × 1019cm-3。
(4) temperature is maintained 1140 DEG C, pressure is adjusted to 200mbar, is passed through hydrogen, trimethyl gallium (50ml/min), three
Aluminium methyl (200ml/min) and ammonia, grow AlxGa1-xN quantum barrier layer, and the Al group of AlxGa1-xN quantum barrier layer is divided into
56%, Si impurity is mixed, doping concentration is 2 × 1018cm-3, growth time 70s, with a thickness of 14nm.
(5) reaction chamber temperature, pressure remain unchanged, and are passed through hydrogen, trimethyl gallium (50ml/min), trimethyl aluminium (50ml/
Min) and ammonia, growth AlyGa1-yN Quantum Well, the Al group of AlyGa1-yN quantum well layer are divided into 35%, growth time 50s,
With a thickness of 5nm.
(6) source metal and ammonia stopping are passed through after the completion of growing, and are passed through hydrogen 3min, carries out AlyGa1-yN quantum
The Ga atomic substitutions of well layer, formed AlyGa1-yN quantum well layer on Al content gradually variational AlGaN, Al component from 35% to 80%,
Thickness of thin layer about 2nm.
(7) repeat step 4 to step 66 circulations, form the quantum well structure in 6 periods.
(8) temperature of reaction chamber remains unchanged, and is passed through hydrogen, trimethyl gallium (50ml/min), trimethyl aluminium (200ml/
Min) and ammonia, growth AlxGa1-xN quantum barrier layer, the Al group of AlxGa1-xN quantum barrier layer are divided into 56%, and growth time is
70s grows the last layer quantum and builds with a thickness of 14nm.
(9) reaction chamber temperature, pressure remain unchanged, and are passed through hydrogen, trimethyl gallium (50ml/min), trimethyl aluminium
(250ml/min) and ammonia grow first layer p-type AltGa1-tN electronic barrier layer, the Al of p-type AltGa1-tN electronic barrier layer
Group is divided into 65%, mixes Mg impurity, and the doping concentration of Mg is 1 × 1019cm-3.Growth time is 60s, with a thickness of 14nm.
(10) stop being passed through source metal and ammonia after the completion of growth, be passed through hydrogen 4min, carry out first layer p-type AltGa1-
The Ga atomic substitutions of tN electronic barrier layer form the AlGaN of Al content gradually variational on first layer p-type AltGa1-tN electronic barrier layer,
Al component is from 65% to 100%, thickness of thin layer about 4nm.
(11) reaction chamber temperature, pressure remain unchanged, and are passed through hydrogen, trimethyl gallium (50ml/min), trimethyl aluminium
(80ml/min) and ammonia grow second layer p-type AltGa1-tN electronic barrier layer, the Al of p-type AltGa1-tN electronic barrier layer
Group is divided into 40%, mixes Mg impurity, and the doping concentration of Mg is 1 × 1019cm-3, growth time 30s, with a thickness of 5nm.
(12) repeat step 9 to step 11 5 circulations, form the high barrier P-type AltGa1-tN electronics in 5 periods
Barrier layer and low barrier P-type AltGa1-tN electronic barrier layer.
(13) reaction chamber temperature, pressure remain unchanged, and are passed through hydrogen, trimethyl gallium (50ml/min), trimethyl aluminium
(50ml/min) and ammonia grow AlGaN hole injection layer, and the Al group of AlGaN hole injection layer is divided into 35%, and incorporation Mg is miscellaneous
Matter, the doping concentration of Mg are 2 × 1019cm-3, growth time 5min, with a thickness of 30nm.
(14) temperature is reduced to 1000 DEG C, and pressure is adjusted to 200mbar, is passed through hydrogen, trimethyl gallium (50ml/min) and ammonia,
Continued growth GaN hole injection layer, mixes Mg impurity, and the doping concentration of Mg is 2 × 1019cm-3, growth time 5min, thickness
For 10nm.
The growth of this ultraviolet LED terminates, and is processed into 1mm2The chip of size, is passed through the electric current of 350mA, wavelength 280nm, bright
Degree is 110mW, and external quantum efficiency is more than 5%, forward voltage 6.5V.
On the basis of the above embodiments, below to the second electronics of AlxGa1-xN quantum barrier layer and p-type AltGa1-tN
It is illustrated for the LED preparation method of barrier layer progress Ga atomic substitutions, the preparation process of ultraviolet LED includes the following steps:
(1) MOCVD reaction chamber temperature rises to 950 DEG C, pressure 400mbar, while being passed through trimethyl aluminium (150ml/min)
It with ammonia 3min, reacts on sapphire, forms the AlN buffer layer of 25nm；Temperature is improved to 1350 DEG C, pressure reduction
To 100mbar, it is passed through hydrogen, trimethyl aluminium (400ml/min) and ammonia 150min, forms the undoped AlN layer of 2500nm.
(2) temperature is reduced to 1140 DEG C, pressure maintains 200mbar, be passed through hydrogen, trimethyl gallium (100ml/min),
Trimethyl aluminium (360ml/min) and ammonia 90min.Growth a layer thickness is that the non-of 1500nm mixes AltGa1-tN layers, AltGa1-
The Al group of tN is divided into 50%.
(3) reaction chamber temperature, pressure are constant, are passed through hydrogen, trimethyl gallium (100ml/min), trimethyl aluminium (360ml/
Min) and ammonia 90min, and silane is mixed, growth a layer thickness is AlwGal-wN layers of N-type of 1500nm, N-type AlwGal-wN
The Al group of layer is divided into 50%, and the doping concentration that AlwGal-wN layers of N-type is 1 × 1019cm-3。
(4) temperature is maintained 1140 DEG C, pressure is adjusted to 200mbar, is passed through hydrogen, trimethyl gallium (50ml/min), three
Aluminium methyl (200ml/min) and ammonia, grow AlxGa1-xN quantum barrier layer, and the Al group of AlxGa1-xN quantum barrier layer is divided into
56%, Si impurity is mixed, doping concentration is 1 × 1018cm-3, growth time 80s, with a thickness of 16nm.
(5) source metal and ammonia stopping are passed through after the completion of growing, and are passed through hydrogen 20min, carries out AlxGa1-xN quantum
The Ga atomic substitutions of barrier layer, formed AlxGa1-xN quantum barrier layer on Al content gradually variational AlGaN, Al component from 56% to
100%, thickness of thin layer about 10nm.
(6) reaction chamber temperature, pressure remain unchanged, and are passed through hydrogen, trimethyl gallium (50ml/min), trimethyl aluminium (50ml/
Min) and ammonia, growth AlyGa1-yN Quantum Well, the Al group of AlyGa1-yN quantum well layer are divided into 35%, growth time 25s,
With a thickness of 2.5nm.
(7) repeat step 4 to step 6 100 circulations, form the quantum well structure in 100 periods.
(8) temperature of reaction chamber remains unchanged, and is passed through hydrogen, trimethyl gallium (50ml/min), trimethyl aluminium (200ml/
Min) and ammonia, growth AlxGa1-xN quantum barrier layer, the Al group of AlxGa1-xN quantum barrier layer are divided into 56%, and growth time is
80s grows the last layer quantum and builds with a thickness of 16nm.
(9) reaction chamber temperature, pressure remain unchanged, and are passed through hydrogen, trimethyl gallium (50ml/min), trimethyl aluminium
(250ml/min) and ammonia grow first layer p-type AltGa1-tN electronic barrier layer, the Al of p-type AltGa1-tN electronic barrier layer
Group is divided into 65%, mixes Mg impurity, and the doping concentration of Mg is 1 × 1019cm-3.Growth time is 45s, with a thickness of 10.5nm.
(10) reaction chamber temperature, pressure remain unchanged, and are passed through hydrogen, trimethyl gallium (50ml/min), trimethyl aluminium
(80ml/min) and ammonia grow second layer p-type AltGa1-tN electronic barrier layer, the Al of p-type AltGa1-tN electronic barrier layer
Group is divided into 40%, mixes Mg impurity, and the doping concentration of Mg is 1 × 1019cm-3, growth time 60s, with a thickness of 10nm.
(11) stop being passed through source metal and ammonia after the completion of growth, be passed through hydrogen 5min, carry out second layer p-type AltGa1-
The Ga atomic substitutions of tN electronic barrier layer form the AlGaN of Al content gradually variational on second layer p-type AltGa1-tN electronic barrier layer,
Al component is from 40% to 90%, thickness of thin layer about 5nm.
(12) repeat step 9 to step 11 7 circulations, form the high barrier P-type AltGa1-tN electronics in 7 periods
Barrier layer and low barrier P-type AltGa1-tN electronic barrier layer.
(13) reaction chamber temperature, pressure remain unchanged, and are passed through hydrogen, trimethyl gallium (50ml/min), trimethyl aluminium
(50ml/min) and ammonia grow AlGaN hole injection layer, and the Al group of AlGaN hole injection layer is divided into 45%, and incorporation Mg is miscellaneous
Matter, the doping concentration of Mg are 2 × 1019cm-3, growth time 5min, with a thickness of 30nm.
The growth of this ultraviolet LED terminates, and is processed into 1mm2The chip of size, is passed through the electric current of 350mA, wavelength 280nm, bright
Degree is 135mW, and external quantum efficiency is more than 5%, forward voltage 6.5V.
On the basis of the above embodiments, below to AlxGa1-xN quantum barrier layer and p-type AltGa1-tN electronic blocking
It is illustrated for the LED preparation method of layer progress Ga atomic substitutions, the preparation process of ultraviolet LED includes the following steps:
(1) MOCVD reaction chamber temperature rises to 850 DEG C, pressure 400mbar, while being passed through trimethyl aluminium (150ml/min)
It with ammonia 3min, reacts on sapphire, forms the AlN buffer layer of 25nm；Temperature is improved to 1300 DEG C, pressure reduction
To 100mbar, it is passed through hydrogen, trimethyl aluminium (400ml/min) and ammonia 90min, forms the undoped AlN layer of 1500nm.
(2) temperature is reduced to 1140 DEG C, pressure maintains 200mbar, be passed through hydrogen, trimethyl gallium (100ml/min),
Trimethyl aluminium (360ml/min) and ammonia 60min.Growth a layer thickness is that the non-of 1000nm mixes AltGa1-tN layers, AltGa1-
The Al group of tN is divided into 50%.
(3) reaction chamber temperature, pressure are constant, are passed through hydrogen, trimethyl gallium (100ml/min), trimethyl aluminium (360ml/
Min) and ammonia 60min, and silane is mixed, growth a layer thickness is AlwGal-wN layers of N-type of 1000nm, N-type AlwGal-wN
The Al group of layer is divided into 50%, and the doping concentration that AlwGal-wN layers of N-type is 1 × 1019cm-3.
(4) temperature is maintained 1140 DEG C, pressure is adjusted to 200mbar, is passed through hydrogen, trimethyl gallium (50ml/min), three
Aluminium methyl (200ml/min) and ammonia, grow AlxGa1-xN quantum barrier layer, and the Al group of AlxGa1-xN quantum barrier layer is divided into
56%, Si impurity is mixed, doping concentration is 1 × 1018cm-3, growth time 40s, with a thickness of 8nm.
(5) source metal and ammonia stopping are passed through after the completion of growing, and are passed through hydrogen 1min, carries out AlxGa1-xN quantum
The Ga atomic substitutions of barrier layer, formed AlxGa1-xN quantum barrier layer on Al content gradually variational AlGaN, Al component from 56% to 80%,
Thickness of thin layer about 1nm.
(6) reaction chamber temperature, pressure remain unchanged, and are passed through hydrogen, trimethyl gallium (50ml/min), trimethyl aluminium (50ml/
Min) and ammonia, growth AlyGa1-yN Quantum Well, the Al group of AlyGa1-yN quantum well layer are divided into 35%, growth time 30s,
With a thickness of 3nm.
(7) repeat step 4 to step 67 circulations, form the quantum well structure in 7 periods.
(8) temperature of reaction chamber remains unchanged, and is passed through hydrogen, trimethyl gallium (50ml/min), trimethyl aluminium (200ml/
Min) and ammonia, growth AlxGa1-xN quantum barrier layer, the Al group of AlxGa1-xN quantum barrier layer are divided into 56%, and growth time is
40s grows the last layer quantum and builds with a thickness of 8nm.
(9) reaction chamber temperature, pressure remain unchanged, and are passed through hydrogen, trimethyl gallium (50ml/min), trimethyl aluminium
The Al group of (250ml/min) and ammonia, growing P-type AltGa1-tN electronic barrier layer, p-type AltGa1-tN electronic barrier layer is divided into
65%, Mg impurity is mixed, the doping concentration of Mg is 1 × 1019cm-3.Growth time is 2min, with a thickness of 30nm.
(10) stop being passed through source metal and ammonia after the completion of growth, be passed through hydrogen 6min, carry out p-type AltGa1-tN electronics
The Ga atomic substitutions on barrier layer, form the AlGaN of Al content gradually variational on p-type AltGa1-tN electronic barrier layer, and Al component is from 65%
To 98%, thickness of thin layer about 6nm.
(11) reaction chamber temperature, pressure remain unchanged, and are passed through hydrogen, trimethyl gallium (50ml/min), trimethyl aluminium
(40ml/min) and ammonia grow AlGaN hole injection layer, and the Al group of AlGaN hole injection layer is divided into 30%, and incorporation Mg is miscellaneous
Matter, the doping concentration of Mg are 2 × 1019cm-3, growth time 6min, with a thickness of 30nm.
The growth of this ultraviolet LED terminates, and is processed into the chip of 1mm2 size, is passed through the electric current of 350mA, wavelength 280nm, bright
Degree is 120mW, and external quantum efficiency is more than 5%, forward voltage 6.5V.
On the basis of the above embodiments, it is prepared below with the LED for carrying out Ga atomic substitutions to AlxGa1-xN quantum barrier layer
It is illustrated for method, the preparation process of ultraviolet LED includes the following steps:
(1) MOCVD reaction chamber temperature rises to 920 DEG C, pressure 400mbar, while being passed through trimethyl aluminium (150ml/min)
It with ammonia 2min, reacts on sapphire, forms the AlN buffer layer of 17nm；Temperature is improved to 1280 DEG C, pressure reduction
To 100mbar, it is passed through hydrogen, trimethyl aluminium (400ml/min) and ammonia 120min, forms the undoped AlN layer of 2000nm.
(2) temperature is reduced to 1140 DEG C, pressure maintains 200mbar, be passed through hydrogen, trimethyl gallium (100ml/min),
Trimethyl aluminium (360ml/min) and ammonia 60min.Growth a layer thickness is that the non-of 1000nm mixes AltGa1-tN layers, AltGa1-
The Al group of tN is divided into 50%.
(3) reaction chamber temperature, pressure are constant, are passed through hydrogen, trimethyl gallium (100ml/min), trimethyl aluminium (360ml/
Min) and ammonia 120min, and silane is mixed, growth a layer thickness is AlwGal-wN layers of N-type of 2000nm, N-type AlwGal-wN
The Al group of layer is divided into 50%, and the doping concentration that AlwGal-wN layers of N-type is 1 × 1019cm-3.
(4) temperature is maintained 1140 DEG C, pressure is adjusted to 200mbar, is passed through hydrogen, trimethyl gallium (50ml/min), three
Aluminium methyl (200ml/min) and ammonia, grow AlxGa1-xN quantum barrier layer, and the Al group of AlxGa1-xN quantum barrier layer is divided into
56%, Si impurity is mixed, doping concentration is 1 × 1018cm-3, growth time 1min, with a thickness of 12nm.
(5) source metal and ammonia stopping are passed through after the completion of growing, and are passed through hydrogen 3min, carries out AlxGa1-xN quantum
The Ga atomic substitutions of barrier layer, formed AlxGa1-xN quantum barrier layer on Al content gradually variational AlGaN, Al component from 56% to 90%,
Thickness of thin layer about 3nm.
(6) reaction chamber temperature, pressure remain unchanged, and are passed through hydrogen, trimethyl gallium (50ml/min), trimethyl aluminium (40ml/
Min) and ammonia, growth AlyGa1-yN Quantum Well, the Al group of AlyGa1-yN quantum well layer are divided into 30%, growth time 15s,
With a thickness of 1.5nm.
(7) repeat step 4 to step 6 10 circulations, form the quantum well structure in 10 periods.
(8) temperature of reaction chamber remains unchanged, and is passed through hydrogen, trimethyl gallium (50ml/min), trimethyl aluminium (200ml/
Min) and ammonia, growth AlxGa1-xN quantum barrier layer, the Al group of AlxGa1-xN quantum barrier layer are divided into 56%, and growth time is
1min grows the last layer quantum and builds with a thickness of 12nm.
(9) reaction chamber temperature, pressure remain unchanged, and are passed through hydrogen, trimethyl gallium (50ml/min), trimethyl aluminium
(250ml/min) and ammonia grow first layer p-type AltGa1-tN electronic barrier layer, the Al of p-type AltGa1-tN electronic barrier layer
Group is divided into 65%, mixes Mg impurity, and the doping concentration of Mg is 1 × 1019cm-3.Growth time is 120s, with a thickness of 28nm.
(10) reaction chamber temperature, pressure remain unchanged, and are passed through hydrogen, trimethyl gallium (50ml/min), trimethyl aluminium
(80ml/min) and ammonia grow second layer p-type AltGa1-tN electronic barrier layer, the Al of p-type AltGa1-tN electronic barrier layer
Group is divided into 40%, mixes Mg impurity, and the doping concentration of Mg is 1 × 1019cm-3, growth time 60s, with a thickness of 10nm.
(11) repeat step 9 to step 10 2 circulations, form the high barrier P-type AltGa1-tN electronics in 2 periods
Barrier layer and low barrier P-type AltGa1-tN electronic barrier layer.
(12) reaction chamber temperature, pressure remain unchanged, and are passed through hydrogen, trimethyl gallium (50ml/min), trimethyl aluminium
(50ml/min) and ammonia grow AlGaN hole injection layer, and the Al group of AlGaN hole injection layer is divided into 35%, and incorporation Mg is miscellaneous
Matter, the doping concentration of Mg are 2 × 1019cm-3, growth time 5min, with a thickness of 30nm.
The growth of this ultraviolet LED terminates, and is processed into the chip of 1mm2 size, is passed through the electric current of 350mA, wavelength 280nm, bright
Degree is 125mW, and external quantum efficiency is more than 5%, forward voltage 6.5V.
On the basis of the above embodiments, it is prepared below with the LED for carrying out Ga atomic substitutions to AlyGa1-yN quantum well layer
It is illustrated for method, the preparation process of ultraviolet LED includes the following steps:
(1) MOCVD reaction chamber temperature rises to 880 DEG C, pressure 400mbar, while being passed through trimethyl aluminium (150ml/min)
It with ammonia 3min, reacts on sapphire, forms the AlN buffer layer of 25nm；Temperature is improved to 1250 DEG C, pressure reduction
To 100mbar, it is passed through hydrogen, trimethyl aluminium (400ml/min) and ammonia 180min, forms the undoped AlN layer of 3000nm.
(2) temperature is reduced to 1140 DEG C, pressure maintains 200mbar, be passed through hydrogen, trimethyl gallium (100ml/min),
Trimethyl aluminium (360ml/min) and ammonia 90min.Growth a layer thickness is that the non-of 1500nm mixes AltGa1-tN layers, AltGa1-
The Al group of tN is divided into 50%.
(3) reaction chamber temperature, pressure are constant, are passed through hydrogen, trimethyl gallium (100ml/min), trimethyl aluminium (360ml/
Min) and ammonia 120min, and silane is mixed, growth a layer thickness is AlwGal-wN layers of N-type of 2000nm, N-type AlwGal-wN
The Al group of layer is divided into 50%, and the doping concentration that AlwGal-wN layers of N-type is 1 × 1019cm-3.
(4) temperature is maintained 1140 DEG C, pressure is adjusted to 200mbar, is passed through hydrogen, trimethyl gallium (50ml/min), three
Aluminium methyl (200ml/min) and ammonia, grow AlxGa1-xN quantum barrier layer, and the Al group of AlxGa1-xN quantum barrier layer is divided into
56%, Si impurity is mixed, doping concentration is 1 × 1018cm-3, growth time 1min, with a thickness of 12nm.
(5) reaction chamber temperature, pressure remain unchanged, and are passed through hydrogen, trimethyl gallium (50ml/min), trimethyl aluminium (40ml/
Min) and ammonia, growth AlyGa1-yN Quantum Well, the Al group of AlyGa1-yN quantum well layer are divided into 35%, growth time 30s,
With a thickness of 3nm.
(6) source metal and ammonia stopping are passed through after the completion of growing, and are passed through hydrogen 30s, carries out AlyGa1-yN Quantum Well
The Ga atomic substitutions of layer, form the AlGaN of Al content gradually variational on AlyGa1-yN quantum well layer, and Al component is thin from 35% to 65%
Thickness degree about 0.5nm.
(7) repeat step 4 to step 67 circulations, form the quantum well structure in 7 periods.
(8) temperature of reaction chamber remains unchanged, and is passed through hydrogen, trimethyl gallium (50ml/min), trimethyl aluminium (200ml/
Min) and ammonia, growth AlxGa1-xN quantum barrier layer, the Al group of AlxGa1-xN quantum barrier layer are divided into 56%, and growth time is
1min grows the last layer quantum and builds with a thickness of 12nm.
(9) reaction chamber temperature, pressure remain unchanged, and are passed through hydrogen, trimethyl gallium (50ml/min), trimethyl aluminium
(250ml/min) and ammonia grow first layer p-type AltGa1-tN electronic barrier layer, the Al of p-type AltGa1-tN electronic barrier layer
Group is divided into 65%, mixes Mg impurity, and the doping concentration of Mg is 1 × 1019cm-3.Growth time is 10s, with a thickness of 2.3nm.
(10) reaction chamber temperature, pressure remain unchanged, and are passed through hydrogen, trimethyl gallium (50ml/min), trimethyl aluminium
(80ml/min) and ammonia grow second layer p-type AltGa1-tN electronic barrier layer, the Al of p-type AltGa1-tN electronic barrier layer
Group is divided into 40%, mixes Mg impurity, and the doping concentration of Mg is 1 × 1019cm-3, growth time 10s, with a thickness of 1.7nm.
(11) repeat step 9 to step 10 20 circulations, form the high barrier P-type AltGa1-tN electricity in 20 periods
Sub- barrier layer and low barrier P-type AltGa1-tN electronic barrier layer.
(12) reaction chamber temperature, pressure remain unchanged, and are passed through hydrogen, trimethyl gallium (50ml/min), trimethyl aluminium
(50ml/min) and ammonia grow AlGaN hole injection layer, and the Al group of AlGaN hole injection layer is divided into 35%, and incorporation Mg is miscellaneous
Matter, the doping concentration of Mg are 2 × 1019cm-3, growth time 5min, with a thickness of 30nm.
The growth of this ultraviolet LED terminates, and is processed into the chip of 1mm2 size, is passed through the electric current of 350mA, wavelength 280nm, bright
Degree is 125mW, and external quantum efficiency is more than 5%, forward voltage 6.5V.
Embodiment two
Fig. 2 is a kind of structural schematic diagram of ultraviolet LED provided by Embodiment 2 of the present invention；Fig. 3 is the embodiment of the present invention two
A kind of structural schematic diagram of the ultraviolet LED ideal energy band provided；Fig. 4 is a kind of ultraviolet LED pair provided by Embodiment 2 of the present invention
Quantum Well and the second electronic barrier layer carry out Ga atomic substitutions treated band structure schematic diagram；Fig. 5 is the embodiment of the present invention
A kind of two ultraviolet LEDs provided carry out Ga atomic substitutions treated that band structure is illustrated to Quantum Well and the first electronic barrier layer
Figure；Fig. 6 is that a kind of ultraviolet LED provided by Embodiment 2 of the present invention builds quantum and the first electronic barrier layer carries out Ga atomic substitutions
Treated band structure schematic diagram；Fig. 7 is a kind of ultraviolet LED provided by Embodiment 2 of the present invention to quantum base and the second electronics
Barrier layer carries out Ga atomic substitutions treated band structure schematic diagram.As shown in Fig. 2-Fig. 7, on the basis of above-described embodiment
On, the embodiment of the present invention two also provides a kind of ultraviolet LED.
Specifically, ultraviolet LED is prepared using the ultraviolet LED preparation method in embodiment one.
It should be noted that the ultraviolet LED using the preparation method in embodiment one, successively includes substrate from bottom to up
10, buffer layer 20, the non-AltGal-tN layer 30 mixed, N-type AlwGal-wN layer 40,50- multi-quantum pit structure layer 50, p-type
AltGa1-tN electronic barrier layer 60 and p-type hole injection layer 70, ultimately form ultraviolet LED.Wherein, the ideal energy of ultraviolet LED
Band structure schematic diagram is as shown in figure 3, by respectively to AlyGa1-yN quantum well layer, the AlxGa1- in multi-quantum pit structure layer 50
XN quantum barrier layer carries out the processing of Ga atomic substitutions, meanwhile, also to the first electronic blocking in p-type AltGa1-tN electronic barrier layer
Layer or the second electronic barrier layer carry out the processing of Ga atomic substitutions, band structure schematic diagram such as Fig. 4-Fig. 7 of treated ultraviolet LED
Shown, the AlGaN layer for carrying out the gradual change Al component that Ga atomic substitutions treated ultraviolet LED is formed rises electronic barrier gradually
Height can then play the role of stopping electronics, while hole barrier is gradually decreased, and then be conducive to hole injection efficiency
Promotion, electron hole concentration increases, and combined efficiency of the carrier in Quantum Well is effectively promoted, to improve ultraviolet LED
The luminous efficiency of internal quantum efficiency, ultraviolet LED increases, while also improving sterilization, phototherapy and cured efficiency.
Other technical characteristics have been described in detail in above-described embodiment one, and details are not described herein again.
Ultraviolet LED provided by Embodiment 2 of the present invention successively includes substrate 10, buffer layer 20, non-mixes from bottom to up
AltGal-tN layer 30, N-type AlwGal-wN layer 40,50- multi-quantum pit structure layer 50, p-type AltGa1-tN electronic barrier layer 60 with
And p-type hole injection layer 70, ultimately form ultraviolet LED.By respectively to the AlyGa1-yN quantum in multi-quantum pit structure layer 50
Well layer, AlxGa1-xN quantum barrier layer carry out the processing of Ga atomic substitutions, meanwhile, also in p-type AltGa1-tN electronic barrier layer
First electronic barrier layer or the second electronic barrier layer carry out the processing of Ga atomic substitutions, carry out Ga atomic substitutions treated and is ultraviolet
The AlGaN layer for the gradual change Al component that LED is formed gradually rises electronic barrier, can then play the role of stopping electronics,
Simultaneously hole barrier is gradually decreased, be then conducive to the promotion of hole injection efficiency, electron hole concentration increases, effectively mentions
Combined efficiency of the carrier in Quantum Well is risen, to improve the internal quantum efficiency of ultraviolet LED, the luminous efficiency of ultraviolet LED has
It is improved, while also improving sterilization, phototherapy and cured efficiency.Carrier recombination efficiency is improved, to improve purple
The luminous efficiency of outer LED, while also improving sterilization, phototherapy and cured efficiency.
Finally, it should be noted that the above embodiments are only used to illustrate the technical solution of the present invention., rather than its limitations；To the greatest extent
Pipe present invention has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that: its according to
So be possible to modify the technical solutions described in the foregoing embodiments, or to some or all of the technical features into
Row equivalent replacement；And these are modified or replaceed, and the essence of corresponding technical solution is not made to fall off various embodiments of the present invention technology
The range of scheme.
Claims (10)
1. a kind of ultraviolet LED preparation method is applied in growth apparatus characterized by comprising
It is passed through source metal and V race reactant, on substrate grown buffer layer；
The non-AltGal-tN layer mixed is grown on the buffer layer；
N-type AlwGal-wN layers is grown on the non-AltGal-tN layer mixed；
AlxGa1-xN/AlyGa1-yN multi-quantum pit structure layer is grown on the N-type AlwGal-wN layer；
Ga atomic substitutions are carried out to the AlxGa1-xN/AlyGa1-yN multi-quantum pit structure layer；
The growing P-type AltGa1-tN electronic barrier layer on the AlxGa1-xN/AlyGa1-yN multi-quantum pit structure layer；
The growing P-type hole injection layer on the p-type AltGa1-tN electronic barrier layer, to form ultraviolet LED.
2. ultraviolet LED preparation method according to claim 1, which is characterized in that described at described N-type AlwGal-wN layers
Upper growth AlxGa1-xN/AlyGa1-yN multi-quantum pit structure layer includes:
Cycle alternation growth AlxGa1-xN quantum barrier layer and AlyGa1-yN quantum well layer, shape on the N-type AlwGal-wN layer
At the AlxGa1-xN/AlyGa1-yN multi-quantum pit structure layer；
Wherein, the AlxGa1-xN quantum barrier layer and the AlyGa1-yN quantum well layer are stacked,
First layer and the last layer are the AlxGa1-xN amount in the AlxGa1-xN/AlyGa1-yN multi-quantum pit structure layer
Sub- barrier layer；Or first layer and the last layer are described in the AlxGa1-xN/AlyGa1-yN multi-quantum pit structure layer
AlyGa1-yN quantum well layer.
3. ultraviolet LED preparation method according to claim 2, which is characterized in that described to the AlxGa1-xN/
AlyGa1-yN multi-quantum pit structure layer carries out Ga atomic substitutions
Stopping is passed through source metal and V race reactant, is passed through hydrogen, to the AlxGa1-xN quantum barrier layer and/or described
AlyGa1-yN quantum well layer carries out Ga atomic substitutions, in the AlxGa1-xN quantum barrier layer and/or the AlyGa1-yN quantum
The AlGaN layer of Al content gradually variational is formed in well layer, wherein Al component internal in AlGaN layer is less than the Al group on AlGaN layer surface layer
Point.
4. ultraviolet LED preparation method according to claim 3, which is characterized in that in the AlxGa1-xN quantum barrier layer
The Al component of AlGaN layer is greater than the Al component of AlGaN layer in the AlyGa1-yN quantum well layer.
5. ultraviolet LED preparation method according to claim 1, which is characterized in that described in the AlxGa1-xN/
Growing P-type AltGa1-tN electronic barrier layer includes: on AlyGa1-yN multi-quantum pit structure layer
In at least two layers of storied length of the AlxGa1-xN/AlyGa1-yN multi-quantum pit structure layer upper layer p-type AltGa1-tN
Electronic barrier layer.
6. ultraviolet LED preparation method according to claim 5, which is characterized in that in the AlxGa1-xN/AlyGa1-
At least two layers of storied length of the yN multi-quantum pit structure layer upper layer p-type AltGa1-tN electronic barrier layer carries out Ga atomic substitutions packet
It includes:
Stopping is passed through source metal and V race reactant, is passed through hydrogen, at least one layer of p-type AltGa1-tN electronic barrier layer into
Row Ga atomic substitutions form the AlGaN layer of Al content gradually variational, wherein AlGaN in the p-type AltGa1-tN electronic barrier layer
Internal Al component is less than the Al component on AlGaN layer surface layer in layer.
7. ultraviolet LED preparation method according to claim 2, which is characterized in that the AlxGa1-xN/AlyGa1-yN is more
Quantum well structure layer with a thickness of 5-50nm.
8. the ultraviolet LED preparation method according to claim 3 or 6, which is characterized in that the time for being passed through hydrogen is 5s-
20min。
9. ultraviolet LED preparation method according to claim 2, which is characterized in that alternating growth AlxGa1-xN quantum barrier layer
Cycle-index with AlyGa1-yN quantum well layer is 2-100 times.
10. a kind of ultraviolet LED, which is characterized in that the ultraviolet LED uses ultraviolet LED of any of claims 1-9
Preparation method is prepared.
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| CN107195742A (en) * | 2017-07-17 | 2017-09-22 | 圆融光电科技股份有限公司 | The preparation method and ultraviolet LED of ultraviolet LED |
| CN109166910A (en) * | 2018-09-06 | 2019-01-08 | 中山大学 | A kind of p-type AlGaN semiconductor material and its epitaxial preparation method |
| CN208589459U (en) * | 2018-06-29 | 2019-03-08 | 江西兆驰半导体有限公司 | A kind of UV LED |
| CN109950371A (en) * | 2019-03-13 | 2019-06-28 | 深圳市洲明科技股份有限公司 | Ultraviolet LED epitaxial structure and preparation method thereof |
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| CN107195742A (en) * | 2017-07-17 | 2017-09-22 | 圆融光电科技股份有限公司 | The preparation method and ultraviolet LED of ultraviolet LED |
| CN208589459U (en) * | 2018-06-29 | 2019-03-08 | 江西兆驰半导体有限公司 | A kind of UV LED |
| CN109166910A (en) * | 2018-09-06 | 2019-01-08 | 中山大学 | A kind of p-type AlGaN semiconductor material and its epitaxial preparation method |
| CN109950371A (en) * | 2019-03-13 | 2019-06-28 | 深圳市洲明科技股份有限公司 | Ultraviolet LED epitaxial structure and preparation method thereof |
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