CN109411576A - Efficient deep-UV light-emitting diode based on h-BN/p-AlGaN superlattices - Google Patents
Efficient deep-UV light-emitting diode based on h-BN/p-AlGaN superlattices Download PDFInfo
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- 229910002704 AlGaN Inorganic materials 0.000 title claims abstract description 24
- 239000000758 substrate Substances 0.000 claims abstract description 26
- 229910016920 AlzGa1−z Inorganic materials 0.000 claims abstract description 12
- 238000002360 preparation method Methods 0.000 claims abstract description 7
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 claims description 27
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 26
- 238000006243 chemical reaction Methods 0.000 claims description 25
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 23
- 229910052710 silicon Inorganic materials 0.000 claims description 23
- 239000010703 silicon Substances 0.000 claims description 23
- 230000004888 barrier function Effects 0.000 claims description 15
- 238000000034 method Methods 0.000 claims description 14
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 13
- 229910021529 ammonia Inorganic materials 0.000 claims description 13
- 229910052733 gallium Inorganic materials 0.000 claims description 13
- 230000008569 process Effects 0.000 claims description 10
- 238000002203 pretreatment Methods 0.000 claims description 7
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 5
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 5
- 229910052796 boron Inorganic materials 0.000 claims description 5
- 230000004907 flux Effects 0.000 claims description 5
- 238000010438 heat treatment Methods 0.000 claims description 5
- 229910052749 magnesium Inorganic materials 0.000 claims description 5
- 239000011777 magnesium Substances 0.000 claims description 5
- 229910052594 sapphire Inorganic materials 0.000 claims description 4
- 239000010980 sapphire Substances 0.000 claims description 4
- 239000012299 nitrogen atmosphere Substances 0.000 claims description 2
- 230000005012 migration Effects 0.000 claims 1
- 238000013508 migration Methods 0.000 claims 1
- 230000000737 periodic effect Effects 0.000 claims 1
- 230000031068 symbiosis, encompassing mutualism through parasitism Effects 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 82
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 10
- 239000000463 material Substances 0.000 description 7
- 229910052757 nitrogen Inorganic materials 0.000 description 5
- 239000002356 single layer Substances 0.000 description 5
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- 239000012298 atmosphere Substances 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- 239000004047 hole gas Substances 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000000969 carrier Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
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Abstract
The invention discloses a kind of efficient deep-UV light-emitting diode and preparation method thereof based on h-BN/p-AlGaN superlattices, to solve existing deep-UV light-emitting diode hole concentration is low and electric current congestion problems.It includes: substrate (1), N-shaped Al from bottom to topxGa1‑xN layers of (2), AlyGa1‑yN/AlzGa1‑zN multiple quantum well layer (3) and p-type layer (4), it is characterised in that: p-type layer (4) uses h-BN/p-AlwGa1‑wN superlattices, i.e. h-BN layer and p-AlwGa1‑wN layers of alternating growth, each h-BN layers and the p-Al above itwGa1‑wN layers combined as a cycle, the period of the long 5-40 of symbiosis.The present invention improves device conductivity, increases hole concentration, alleviates electric current congestion, to obtain the high deep-UV light-emitting diode of luminous power, can be used in deep-UV light-emitting equipment.
Description
Technical field
The invention belongs to technical field of semiconductors, in particular to a kind of efficient lateral light emitting diode can be used for deep ultraviolet
In luminaire.
Technical background
Deep-UV light-emitting diode may be implemented to minimize, and cheap, efficient and the long-life ultraviolet source be obtained, before
Scape is very wide.However but because the factors such as the growth of common AlGaN material is difficult, and doping is difficult, and conductivity is low limit its development.
It is an important factor for influencing its performance that wherein doping difficulty is low with conductivity.It will lead to p if acceptor impurity doping concentration is too low
Area's hole concentration is low, and poor crystal quality can be made if acceptor impurity doping concentration is excessively high, will all make deep-UV light-emitting diode
Degradation, and the low current expansion that will lead to of conductivity is uneven, reduces the reliability of device, is made into affect
The efficiency of light emitting diode, thus increase the area p hole concentration and alleviate electric current congestion be always deep-UV light-emitting diode design and
Important goal when production.
Deep-UV light-emitting diode structure common at present generally includes substrate, N-shaped AlGaN layer, multiple quantum well layer and p-type
Layer, p-type layer is often used AlGaN material, but AlGaN material doping is difficult, and conductivity is low, obtained device internal quantum efficiency
Low, electric current congestion is serious, and the deep-UV light-emitting diode luminous efficiency caused is low, poor reliability.
Summary of the invention
It is an object of the invention to the deficiencies for traditional deep-UV light-emitting diode, propose a kind of based on h-BN/p-
The efficient deep-UV light-emitting diode and preparation method of AlGaN superlattices reduce electric current congestion to improve conductivity, increase empty
Cave concentration, to obtain the high deep-UV light-emitting diode of luminous power.
To achieve the above object, the present invention is based on the efficient deep-UV light-emitting diodes of h-BN/p-AlGaN superlattices, certainly
It include: substrate, N-shaped Al on downxGa1-xN layers, AlyGa1-yN/AlzGa1-zN multiple quantum well layer and p-type layer, it is characterised in that: p
Type layer is used by h-BN and p-AlwGa1-wN presses the h-BN/p-Al of 5-40 period alternating growthwGa1-wN superlattices, to increase sky
Cave mobility reduces the electric current congestion in deep-UV light-emitting diode, improves device light emitting efficiency.
Further, the h-BN/p-AlwGa1-wEvery layer of h-BN layers of N superlattices are with a thickness of 3-12nm and p-AlwGa1-wN
Layer with a thickness of 2-10nm, p-AlwGa1-wN layers of doping concentration range are 6 × 1016cm-1-6×1017cm-1, the adjustment of Al content w
Range is 0-1.
Further, the N-shaped AlxGa1-xN layers with a thickness of 1000-6000nm, doping concentration is 5 × 1017cm-1-1×
1019cm-1, the adjusting range of Al content x is 0.35-1.
Further, the AlyGa1-yN/AlzGa1-zN multiple quantum well layer is by the Al with a thickness of 1-8nmyGa1-yN well layer and thickness
Degree is the Al of 8-25nmzGa1-z3-8 period composition of N barrier layer alternating growth, the adjusting range of Al content y is 0.25-0.9, Al
The adjusting range of content z is 0.35-1.
To achieve the above object, the present invention is based on the systems of the efficient deep-UV light-emitting diode of h-BN/p-AlGaN superlattices
Preparation Method, which comprises the steps of:
1) in MOCVD reacting furnace, heat pre-treatment is carried out to substrate, heating temperature is 900-1300 DEG C；
2) on substrate after the pre-treatment using MOCVD device growth thickness be 1000-6000nm, doping concentration be 5 ×
1017cm-1-1×1019cm-1N-shaped AlxGa1-xN layers, the adjusting range of Al content x is 0.35-1；
3) in N-shaped AlxGa1-xMOCVD device alternating growth Al is utilized on N layeryGa1-yN/AlzGa1-zN multiple quantum well layer, i.e.,
With a thickness of the Al of 1-8nmyGa1-yN well layer and Al with a thickness of 8-25nmzGa1-zN barrier layer 3-8 period of alternating growth, wherein Al
The adjusting range of content y is 0.25-0.9, and the adjusting range of Al content z is 0.35-1；
5) in the Al of multiple quantum wells top layerzGa1-zIt is thick by 5-40 period alternating growth using MOCVD device on N barrier layer
The h-BN layer and the p-Al with a thickness of 2-10nm that degree is 3-12nmwGa1-wN layers, form h-BN/p-AlwGa1-wN superlattices, as p
Type layer, wherein p-AlwGa1-wN layers of doping concentration range are 6 × 1016cm-1-6×1017cm-1, the adjusting range of Al content w is
0-1；
6) reaction chamber temperature is maintained 750-900 DEG C, in N2Atmosphere, anneal 5-10min, completes to based on h-BN/p-
The preparation of the efficient deep-UV light-emitting diode of AlGaN superlattices..
Further, h-BN/p-AlGaN superlattice layer is grown using MOCVD device in the step 4), process conditions are such as
Under:
Reaction chamber temperature is 900-1000 DEG C,
Chamber pressure is 150-300Torr,
When growing h-BN layer while to be passed through ammonia that flow is 30000-40000sccm and flow be 30-40sccm's
Boron source
It is passed through the gallium source that flow is 0-38sccm simultaneously when growing p-AlGaN layers, flow is the silicon source of 390-600sccm
The magnesium source for being 1000-1800sccm with flow.
The present invention has used h-BN/p-AlGaN superlattices as the area P, due to strong pole compared with conventional light emitting diodes
Change effect, two-dimensional hole gas can be generated at h-BN/p-AlGaN heterojunction boundary, such two-dimensional hole gas is by hole in body
Transport in material has become the transport in plane materiel material, substantially increases the mobility in hole, and because h-BN material Background
Carrier, which is hole, compare with the AlGaN material that background carriers are electronics and is more suitable for p layers, can be obtained efficiently dark purple
UV light-emitting diode.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of the efficient deep-UV light-emitting diode the present invention is based on h-BN/p-AlGaN superlattices；
Fig. 2 is efficient deep-UV light-emitting diode process signal of the present invention production based on h-BN/p-AlGaN superlattices
Figure.
Specific embodiment
The present invention will be further described below with reference to the accompanying drawings.
Referring to Fig.1, device architecture of the invention includes: substrate 1, N-shaped AlxGa1-xN layer 2, AlyGa1-yN/AlzGa1-zN is more
Quantum well layer 3 and p-type layer 4.Wherein substrate 1 is GaN or AlN or sapphire or SiC or Si；N-shaped AlxGa1-xN layer 2 is located at substrate
On layer 1, with a thickness of 1000-6000nm；The AlyGa1-yN/AlzGa1-zN multiple quantum well layer 3 is located at N-shaped AlxGa1-xN layer 2 it
On, it is by the Al with a thickness of 1-8nmyGa1-yN well layer and Al with a thickness of 8-25nmzGa1-zThe N barrier layer 3-8 period of alternating growth
Composition；The p-type layer 4 is located at the top layer Al of multiple quantum well layer 3zGa1-zOn N, using by the h-BN and thickness with a thickness of 3-12nm
For the p-Al of 2-10nmwGa1-wN presses the h-BN/p-Al of 5-40 period alternating growthwGa1-wN superlattices, p-AlwGa1-wN layers are mixed
Miscellaneous concentration range is 6 × 1016cm-1-6×1017cm-1, the adjusting range of Al content w is 0-1.
The AlyGa1-yN/AlzGa1-zThe adjusting range of Al content y is 0.25-0.9, Al content z in N multiple quantum well layer 3
Adjusting range be 0.35-1, wherein AlyGa1-yThe deep-UV light-emitting two of the different available different wave lengths of Al component in N layers
Pole pipe.
Referring to Fig. 2, the present invention provides efficient deep-UV light-emitting diode of the preparation based on h-BN/p-AlGaN superlattices
Three various embodiments.
Embodiment 1 prepares the deep-UV light-emitting diode that emission wavelength is 300nm in GaN substrate.
Step 1 pre-processes substrate.
By GaN substrate after over cleaning, it is placed in metal organic chemical vapor deposition MOCVD reaction chamber, by reaction chamber
Vacuum degree be reduced to 120Torr；It is passed through hydrogen to reaction chamber, under the conditions of MOCVD chamber pressure is reached for 150Torr,
It is 900 DEG C by silicon to temperature, and keeps 10min, completes the heat treatment to substrate base.
Step 2, growing n-type Al0.35Ga0.65N layers, such as Fig. 2 (a).
Pretreated substrate is placed in MOCVD device, it is 1100 DEG C that its reaction chamber temperature, which is arranged, while being passed through flow
For the ammonia of 25000sccm, flow is the silicon source of 2sccm, the silicon source that the gallium source and flow that flow is 200sccm are 595sccm,
Pressure remains 300Torr, the N-shaped Al that growth thickness is 4 μm on substrate after the pre-treatment0.35Ga0.65N layers.
Step 3 grows Al0.25Ga0.75N/Al0.35Ga0.65N multi-quantum pit structure, such as Fig. 2 (b).
In N-shaped Al0.35Ga0.65Utilize MOCVD device in the Al in 8 periods of reaction chamber alternating growth on N layer0.25Ga0.75N/
Al0.35Ga0.65N Quantum Well, the single layer Al in each period0.25Ga0.75N well layer is with a thickness of 4nm, and silicon source flow is 150sccm, often
The single layer Al in a period0.35Ga0.65N barrier layer thickness be 15nm, silicon source flow be 210sccm, wherein in growth course nitrogen source stream
Amount is maintained at 30000sccm, and gallium source flux remains 340sccm, and temperature remains 900 DEG C, and pressure remains 200Torr.
Step 4 grows h-BN/p-GaN superlattices, such as Fig. 2 (c).
The reaction chamber temperature that MOCVD device 4a) is arranged is 900 DEG C, pressure 150Torr, while being passed through flow and being
The ammonia and flow of 30000sccm is the boron source of 30sccm, in Al0.25Ga0.75N/Al0.35Ga0.65N multiple quantum wells top layer
Al0.35Ga0.65The h-BN layer with a thickness of 3nm is first grown on N barrier layer；Being passed through gallium source, flow that flow is 38sccm simultaneously again is
The ammonia and flow of 30000sccm is the magnesium source of 1000sccm, and growth thickness is the p-GaN of 2nm on h-BN layer；The h-BN layers
A cycle is constituted with the p-GaN layer above it, altogether 40 periods of alternating growth；
Reaction chamber temperature 4b) is maintained 750 DEG C, in N2Under atmosphere, anneal 10min, completes to be 300nm to emission wavelength
Deep-UV light-emitting diode production.
Embodiment 2 prepares the deep-UV light-emitting diode that emission wavelength is 260nm on AlN substrate.
Step 1, substrate is pre-processed.
By AlN substrate after over cleaning, it is placed in metal organic chemical vapor deposition MOCVD reaction chamber, by reaction chamber
Vacuum degree be reduced to 110Torr；It is passed through hydrogen to reaction chamber, under the conditions of MOCVD chamber pressure is reached for 120Torr,
It is 1200 DEG C by silicon to temperature, and keeps 10min, completes the heat treatment to substrate base.
Step 2, growing n-type Al0.55Ga0.45N layers, such as Fig. 2 (a).
The N-shaped Al for being 1 μm using MOCVD device growth thickness on substrate after the pre-treatment0.55Ga0.45N layers, technique
Condition is as follows:
Reaction chamber temperature is 1150 DEG C, pressure 250Torr, while being passed through the ammonia that flow is 30000sccm, and flow is
The silicon source of 4sccm, the silicon source that the gallium source and flow that flow is 150sccm are 765sccm.
Step 3, Al is grown0.45Ga0.55N/Al0.65Ga0.35N multi-quantum pit structure, such as Fig. 2 (b).
In N-shaped Al0.55Ga0.45Utilize MOCVD device in the Al in 3 periods of reaction chamber alternating growth on N layer0.45Ga0.55N/
Al0.65Ga0.35N Quantum Well, the single layer Al in each period0.45Ga0.55N well layer and Al0.65Ga0.35The thickness of N barrier layer is respectively 1nm
And 8nm, the process conditions of growth are as follows:
Temperature is 1000 DEG C, pressure 150Torr,
In growth Al0.45Ga0.55When N well layer, holding silicon source flow is 270sccm, and nitrogen source flow is 35000sccm and gallium
Source flux is 340sccm,
In growth Al0.65Ga0.35When N barrier layer, holding silicon source flow is 390sccm, and nitrogen source flow is 35000sccm and gallium
Source flux is 340sccm.
Step 4, h-BN/p-Al is grown0.5Ga0.5N superlattice layer, such as Fig. 2 (c).
4.1) in Al0.45Ga0.55N/Al0.65Ga0.35The top layer Al of N multiple quantum wells0.65Ga0.35It is utilized on N barrier layer
The h-BN layer that MOCVD device first grows with a thickness of 8nm, regrowth with a thickness of 7nm p-Al0.5Ga0.5N layers, h-BN layers and it on
The p-Al in face0.5Ga0.5N layers of composition a cycle, 20 periods of alternating growth, process conditions are as follows:
Maintain the temperature at 950 DEG C, pressure in 200Torr,
It is passed through the nitrogen source that flow is 35000sccm simultaneously when growing h-BN, flow is the boron source of 35sccm,
In growth p-Al0.5Ga0.5The nitrogen source that flow is 35000sccm is passed through when N simultaneously, flow is the gallium source of 35sccm,
The magnesium source that the silicon source and flow that flow is 390sccm are 1800sccm；
4.2) reaction chamber temperature is maintained 800 DEG C, in N2Under atmosphere, anneal 10min, and completion is to emission wavelength
The deep-UV light-emitting diode of 260nm makes.
Embodiment 3 prepares the deep-UV light-emitting diode that emission wavelength is 210nm on a sapphire substrate.
Step A, pre-processes substrate.
By Sapphire Substrate after over cleaning, it is placed in metal organic chemical vapor deposition MOCVD reaction chamber, will reacts
The vacuum degree of room is reduced to 120Torr；It is passed through hydrogen to reaction chamber, is reached for 140Torr condition in MOCVD chamber pressure
Under, it is 1300 DEG C by silicon to temperature, and keep 10min, completes the heat treatment to substrate base.
Step B, AlN layers of growing n-type, such as Fig. 2 (a).
On substrate after the pre-treatment using MOCVD device reaction chamber temperature be 1200 DEG C, pressure 200Torr, ammonia
Throughput is 35000sccm, and silicon source flow is 6sccm, and growth thickness is 6 μm under the process conditions that silicon source flow is 1530sccm
AlN layers of N-shaped.
Step C grows Al0.9Ga0.1N/AlN multi-quantum pit structure, such as Fig. 2 (b).
It using MOCVD device in ammonia flow is 40000sccm on N-shaped AlN layer, temperature is 1100 DEG C, and pressure is
Under conditions of 250Torr, the Al in 5 periods of alternating growth0.9Ga0.1N/AlN Quantum Well；
The single layer Al in each period0.9Ga0.1N well layer with a thickness of 8nm, the gallium source flux that when growth is passed through simultaneously is
340sccm, silicon source flow are 540sccm；
The single layer AlN barrier layer in each period with a thickness of 25nm, silicon source flow is 600sccm.
Step D grows h-BN/p-AlN superlattice layer, such as Fig. 2 (c).
In Al0.9Ga0.1It is in reaction chamber temperature using MOCVD device on top layer's AlN barrier layer of N/AlN multiple quantum wells
1000 DEG C, under conditions of pressure is 300Torr, while being 40000sccm ammonia by flow and flow is 40sccm boron source, elder generation
Growth thickness is the h-BN layer of 12nm, then changes and be passed through gas, i.e., is passed through the ammonia that flow is 40000sccm simultaneously, and flow is
The magnesium source of 1500sccm and flow are these three gases of 600sccm silicon source, and growth thickness is the p-AlN layer of 10nm, the h-BN layers
A cycle is constituted with the p-AlN layer above it, in 5 periods of alternating growth, reaction chamber temperature is maintained 900 DEG C, in N2Gas
Under atmosphere, anneal 10min, completes to make the UV LED that emission wavelength is 210nm.
Above description is only three specific examples of the invention, does not constitute any limitation of the invention, it is clear that for this
It, all may be without departing substantially from the principle of the present invention, structure after understand the content of present invention and principle for the professional in field
In the case of, various modifications and variations in form and details are carried out, but these modifications and variations based on inventive concept are still
Within the scope of the claims of the present invention.
Claims (9)
1. a kind of efficient deep-UV light-emitting diode based on h-BN/p-AlGaN superlattices includes: substrate (1), n from bottom to top
Type AlxGa1-xN layers of (2), AlyGa1-yN/AlzGa1-zN multiple quantum well layer (3) and p-type layer (4), it is characterised in that: p-type layer (4) is adopted
With by h-BN and p-AlwGa1-wN presses the h-BN/p-Al of 5-40 period alternating growthwGa1-wN superlattices, to increase hole migration
Rate reduces the electric current congestion in deep-UV light-emitting diode, improves device light emitting efficiency.
2. light emitting diode according to claim 1, it is characterised in that: the h-BN/p-AlwGa1-wN superlattices it is every
H-BN layers of layer is with a thickness of 3-12nm and p-AlwGa1-wN layers with a thickness of 2-10nm, p-AlwGa1-wN layers of doping concentration range are 6 ×
1016cm-1-6×1017cm-1, the adjusting range of Al content w is 0-1.
3. light emitting diode according to claim 1, it is characterised in that: the substrate (1) is GaN or AlN or sapphire
Or SiC or Si.
4. light emitting diode according to claim 1, it is characterised in that: the N-shaped AlxGa1-xN layers (2) with a thickness of
1000-6000nm, doping concentration are 5 × 1017cm-1-1×1019cm-1, the adjusting range of Al content x is 0.35-1.
5. light emitting diode according to claim 1, it is characterised in that: the AlyGa1-yN/AlzGa1-zN multiple quantum well layer
(3) by the Al with a thickness of 1-8nmyGa1-yN well layer and Al with a thickness of 8-25nmzGa1-zN barrier layer 3-8 periodic groups of alternating growth
At the adjusting range of Al content y is 0.25-0.9, and the adjusting range of Al content z is 0.35-1.
6. a kind of preparation method of the efficient deep-UV light-emitting diode based on h-BN/p-AlGaN superlattices, which is characterized in that
Include the following steps:
1) in MOCVD reacting furnace, heat pre-treatment is carried out to substrate, heating temperature is 900-1300 DEG C；
2) on substrate after the pre-treatment using MOCVD device growth thickness be 1000-6000nm, doping concentration be 5 ×
1017cm-1-1×1019cm-1N-shaped AlxGa1-xN layers, the adjusting range of Al content x is 0.35-1；
3) in N-shaped AlxGa1-xMOCVD device alternating growth Al is utilized on N layeryGa1-yN/AlzGa1-zN multiple quantum well layer, i.e. thickness
For the Al of 1-8nmyGa1-yN well layer and Al with a thickness of 8-25nmzGa1-zN barrier layer 3-8 period of alternating growth, wherein Al content y
Adjusting range be 0.25-0.9, the adjusting range of Al content z is 0.35-1；
5) in the Al of multiple quantum wells top layerzGa1-zOn N barrier layer using MOCVD device by 5-40 period alternating growth with a thickness of
The h-BN layer of 3-12nm and the p-Al with a thickness of 2-10nmwGa1-wN layers, form h-BN/p-AlwGa1-wN superlattices, as p-type
Layer, wherein p-AlwGa1-wN layers of doping concentration range are 6 × 1016cm-1-6×1017cm-1, the adjusting range of Al content w is 0-
1；
6) reaction chamber temperature is maintained 750-900 DEG C, in N2Atmosphere, anneal 5-10min, completes to based on h-BN/p-AlGaN
The preparation of the efficient deep-UV light-emitting diode of superlattices.
7. according to the method described in claim 6, it is characterized in that, utilizing MOCVD device growing n-type Al in step 2)xGa1-xN
Layer, process conditions are as follows:
Reaction chamber temperature is 1100-1200 DEG C,
Holding chamber pressure is 200-350Torr,
It is passed through the ammonia that flow is 25000-35000sccm simultaneously into reaction chamber, flow is the silicon source of 2-6sccm, and flow is
The silicon source that the gallium source of 150-200sccm and flow are 595-1530sccm.
8. according to the method described in claim 6, it is characterized in that, growing alternating growth using MOCVD device in step 3)
AlyGa1-yN/AlzGa1-zN multiple quantum well layer, process conditions are as follows:
Reaction chamber temperature is 900-1100 DEG C,
Holding chamber pressure is 150-250Torr,
Grow AlyGa1-yThe silicon source flow being passed through simultaneously when N well layer is 150-540sccm, ammonia flow 35000-
40000sccm and gallium source flux are 340sccm,
Grow AlzGa1-zThe flow for being passed through silicon source when N barrier layer simultaneously is 210-600sccm, and the flow of ammonia is 35000-
40000sccm and the flow in gallium source are 0-340sccm.
9. according to the method described in claim 6, it is characterized in that, growing h-BN/p- using MOCVD device in step 4)
AlGaN superlattice layer, process conditions are as follows:
Reaction chamber temperature is 900-1000 DEG C,
Chamber pressure is 150-300Torr,
It is passed through the ammonia that flow is 30000-40000sccm and the boron source that flow is 30-40sccm simultaneously when growing h-BN layers
It is passed through the gallium source that flow is 0-38sccm simultaneously when growing p-AlGaN layers, flow is the silicon source and stream of 390-600sccm
Amount is the magnesium source of 1000-1800sccm.
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