CN110504176A - Matching process, preparation method and the Related product of middle corresponding wafer is made in three-dimensional storage wafer bonding - Google Patents
Matching process, preparation method and the Related product of middle corresponding wafer is made in three-dimensional storage wafer bonding Download PDFInfo
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Abstract
The application provides matching process, three-dimensional storage preparation method, electronic equipment and the computer storage medium that middle corresponding wafer is made in a kind of three-dimensional storage wafer bonding.The matching process includes: according to the influence factor collection of the first wafer, to obtain the first parameter value collection of influence factor collection, and obtain the first score collection according to the first parameter value collection for each of multiple first wafers the first wafer；The second parameter value collection of influence factor collection is obtained according to the influence factor collection of the second wafer for the second wafer of each of multiple second wafers, and the second score collection of influence factor is obtained according to the second parameter value collection；And it is chosen from multiple second wafers and matched second wafer of the first wafer according to the first score and corresponding second score of each second wafer.The application provides the matching process that middle corresponding wafer is made in a kind of three-dimensional storage wafer bonding, avoids prior art high production cost and the low problem of production efficiency.
Description
Technical field
The invention mainly relates to field of semiconductor manufacture more particularly to a kind of three-dimensional storage wafer bonding, and middle correspondence is made
Matching process, three-dimensional storage preparation method, electronic equipment and the computer storage medium of wafer.
Background technique
With the development of electronic industry, the function of chip becomes increasingly complex, and new semiconductor technology continues to bring out.Three-dimensional is deposited
Reservoir preparation generallys use hybrid bonded technology, and hybrid bonded technology is provided with while being by the bonded interface of wafer
The bonding technology of metal and insulant, and need in bonding process by the metal and metal pair on the bonded interface of two wafers
Together, insulant is aligned with insulant, and is bonded in a certain temperature conditions.It is needed to guarantee that two wafers are effectively bonded
Strict control is carried out to the quality of wafer, however high quality requirement means high production cost and low production efficiency.
Summary of the invention
The application provides a kind of three-dimensional storage wafer bonding and the matching process of middle corresponding wafer, three-dimensional storage system is made
Preparation Method, electronic equipment and computer storage medium avoid prior art high production cost and the low problem of production efficiency.
The application provides the matching process that middle corresponding wafer is made in a kind of three-dimensional storage wafer bonding, the matching process
Include:
Institute is obtained according to the influence factor collection of first wafer for the first wafer of each of multiple first wafers
The first parameter value collection of influence factor collection is stated, and the first score collection is obtained according to the first parameter value collection, wherein the influence
Set of factors includes multiple influence factors, and the first score collection includes multiple first scores, the multiple influence factor with it is described
Multiple first scores correspond；
Institute is obtained according to the influence factor collection of second wafer for the second wafer of each of multiple second wafers
The second parameter value collection of influence factor collection is stated, and the second score of the influence factor is obtained according to the second parameter value collection
Collection, wherein second wafer has multiple influence factors, and corresponding one second score of each influence factor；With
And
It is brilliant from the multiple second according to first score and corresponding second score of each second wafer
It is chosen and matched second wafer of first wafer in circle.
Wherein, " for the first wafer of each of multiple first wafers, according to the influence factor collection of first wafer,
The first parameter value collection of the influence factor collection is obtained, and the first score collection is obtained according to the first parameter value collection, wherein institute
Stating influence factor collection includes multiple influence factors, and the first score collection includes multiple first scores, the multiple influence factor
Corresponded with the multiple first score ", comprising:
By each influence factor of first wafer the first parameter value and parameter preset -- the score table of comparisons compares
It is right, to obtain corresponding first score of first parameter value of each influence factor of first wafer.
Wherein, " for the second wafer of each of multiple second wafers, according to the influence factor collection of second wafer,
The second parameter value collection of the influence factor collection is obtained, and the second of the influence factor is obtained according to the second parameter value collection
Score collection, wherein second wafer has multiple influence factors, and each influence factor is one second point corresponding
Number ", comprising:
By each influence factor of second wafer the second parameter value and parameter preset -- the score table of comparisons compares
It is right, to obtain corresponding second score of second parameter value of each influence factor of second wafer.
Wherein, " according to first score and corresponding second score of each second wafer from the multiple
Chosen and matched second wafer of first wafer in second wafer " include:
For first wafer, the first score and each described the of each influence factor of first wafer is calculated
The influence factor of two wafers is concentrated between the second score of the identical influence factor of the influence factor of first wafer
Difference；And
Matched second wafer of first wafer is obtained by the difference of each influence factor.
Wherein, " matched second wafer of first wafer is obtained by the difference of each influence factor ",
Include:
The absolute value of the difference of each influence factor is added, matching score is obtained；And
It is obtained and matched second wafer of first wafer according to the matching score.
Wherein, " absolute value of the difference of each influence factor is added, matching score is obtained ", comprising:
The absolute value of the difference for each influence factor that the influence factor is concentrated is added, and is obtained mismatching and be divided
Number；And
The mismatch score is subtracted with the sum of the full marks score of all influence factors that the influence factor is concentrated to obtain
The matching score.
Wherein, " obtained and matched second wafer of first wafer according to the matching score " include:
Judge whether the matching score is greater than or equal to preset fraction；And
When the matching score is greater than or equal to the preset fraction, first wafer and second wafer are confirmed
Matching.
Wherein, it " is obtained and matched second wafer of first wafer according to the matching score ", comprising:
All matching scores of first wafer are calculated by KM algorithm and determine that each first wafer is matched
Second wafer.
The application also provides a kind of preparation method of three-dimensional storage, which is characterized in that the preparation method includes:
Pass through the matching process determination and matched second wafer of the first wafer；And
By first wafer and with matched second wafer bonding of first wafer.
The application also provides a kind of electronic equipment, comprising:
First obtains module, for for the first wafer of each of multiple first wafers, according to first wafer
Influence factor collection obtains the first parameter value collection of the influence factor collection, and obtains first point according to the first parameter value collection
Manifold, wherein the influence factor collection includes multiple influence factors, and the first score collection includes multiple first scores, described
Multiple influence factors and the multiple first score correspond；
Second obtains module, for for the second wafer of each of multiple second wafers, according to second wafer
Influence factor collection obtains the second parameter value collection of the influence factor collection, and obtains the shadow according to the second parameter value collection
Second score collection of the factor of sound, wherein second wafer has multiple influence factors, and each influence factor pair
Answer one second score；And
Matching module, for according to first score and corresponding second score of each second wafer from institute
It states in multiple second wafers and chooses and matched second wafer of first wafer.
Wherein, the first acquisition module is specifically used for the first parameter value of each influence factor of first wafer
With parameter preset -- the score table of comparisons is compared, to obtain first parameter of each influence factor of first wafer
It is worth corresponding first score.
Wherein, the second acquisition module is specifically used for the second parameter value of each influence factor of second wafer
With parameter preset -- the score table of comparisons is compared, to obtain second parameter of each influence factor of second wafer
It is worth corresponding second score.
Wherein, the matching module includes:
First computing module, for for first wafer, calculating the of each influence factor of first wafer
One score concentrates influence identical with the influence factor of first wafer with the influence factor of each second wafer
Difference between second score of factor；And
It is matched described to obtain first wafer for the difference by each influence factor for second computing module
Second wafer.
Wherein, second computing module includes:
First sub- computing module obtains matching score for the absolute value of the difference of each influence factor to be added；
And
Second sub- computing module, it is brilliant with first wafer matched described second for being obtained according to the matching score
Circle.
Wherein, the described first sub- computing module includes:
Unit is summed it up, the absolute value of the difference of each influence factor for concentrating the influence factor is added,
It obtains mismatching score；And
Scaling unit, the sum of the full marks score of all influence factors for being concentrated with the influence factor subtract it is described not
Matching score obtains the matching score
Wherein, the described second sub- computing module includes:
Judging unit, for judging whether the matching score is greater than or equal to preset fraction；And
Sub- matching unit, for when the matching score is greater than or equal to the preset fraction, confirming that described first is brilliant
The matching of round and second wafer.
Wherein, the described second sub- computing module is specifically used for calculate all matching scores of first wafer by KM
Method, which calculates, determines each matched second wafer of first wafer.
The application also provides a kind of electronic equipment, the electronic equipment include input unit, one or more memories and
One or more processors, the input unit are used to receive the first parameter of the various factors in each first wafer
Value, and it is also used to receive the second parameter value of the various factors in each second wafer, one or more of memories
It is stored with computer executable program, the computer executable program can be called by one or more of processors, to hold
Row method as described above.
The application provides a kind of computer storage medium, is stored with computer executable program, when the computer can be held
When line program is called, method described above can be performed.
The matching process that middle corresponding wafer is made in the three-dimensional storage wafer bonding of the application is brilliant by obtaining each first
First score of the various factors in circle obtains the second score of the various factors in each second wafer, according to
First score and second score selection and matched second wafer of first wafer, to find and the first wafer
Matched second wafer to ensure that the bonding effect of subsequent first wafer and the second wafer, and does not need the quality to wafer
Strict control is carried out, also reduces production cost while improving production efficiency.
Detailed description of the invention
In order to illustrate more clearly of technical solution of the present invention, attached drawing needed in embodiment will be made below
Simply introduce, it should be apparent that, the accompanying drawings in the following description is only some embodiments of the present invention, general for this field
For logical technical staff, without creative efforts, other attached drawings can also be obtained such as these attached drawings.
Fig. 1 is the process for the matching process that middle corresponding wafer is made in a kind of three-dimensional storage wafer bonding provided by the present application
Schematic diagram；
Fig. 2 is that the detailed process for the matching process that middle corresponding wafer is made in the three-dimensional storage wafer bonding that Fig. 1 is provided is shown
It is intended to；
Fig. 3 is that the detailed process for the matching process that middle corresponding wafer is made in the three-dimensional storage wafer bonding that Fig. 2 is provided is shown
It is intended to；
Fig. 4 is a kind of flow diagram of three-dimensional storage preparation method provided by the present application；
Fig. 5 is the structural schematic diagram of a kind of electronic equipment provided by the present application；
Fig. 6 is another structural schematic diagram for the electronic equipment that Fig. 5 is provided；
Fig. 7 is another structural schematic diagram for the electronic equipment that Fig. 5 is provided；
Fig. 8 is the structural schematic diagram of a kind of electronic equipment provided by the present application.
Specific embodiment
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Site preparation description, it is clear that described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.It is based on
Embodiment in the present invention, it is obtained by those of ordinary skill in the art without making creative efforts every other
Embodiment shall fall within the protection scope of the present invention.
Firstly, the present invention provides the matching process that middle corresponding wafer is made in a kind of three-dimensional storage wafer bonding.At this
Text three-dimensional storage in, two kinds of wafers may be related to, for the ease of distinguish, hereinafter, be referred to as the first wafer and
Second wafer.Wherein, the first wafer refers to that cell array wafer, the second wafer are peripheral wafers.Certainly, in other embodiments,
First wafer and the second wafer can also be other wafers.As an implementation, in three-dimensional storage, there is at least one
First wafer and at least one second wafer.
The matching process that middle corresponding wafer is made in the three-dimensional storage wafer bonding of this paper is realized as follows:
Institute is obtained according to the influence factor collection of first wafer for the first wafer of each of multiple first wafers
The first parameter value collection of influence factor collection is stated, and the first score collection is obtained according to the first parameter value collection, wherein the influence
Set of factors includes multiple influence factors, and the first score collection includes multiple first scores, the multiple influence factor with it is described
Multiple first scores correspond；
Institute is obtained according to the influence factor collection of second wafer for the second wafer of each of multiple second wafers
The second parameter value collection of influence factor collection is stated, and the second score of the influence factor is obtained according to the second parameter value collection
Collection, wherein second wafer has multiple influence factors, and corresponding one second score of each influence factor；With
And
It is brilliant from the multiple second according to first score and corresponding second score of each second wafer
It is chosen and matched second wafer of first wafer in circle.
Wherein, Fig. 1 is the matching process that middle corresponding wafer is made in a kind of three-dimensional storage wafer bonding provided by the present application
Flow diagram.As shown in Figure 1, the matching process that middle corresponding wafer is made in the three-dimensional storage wafer bonding includes as follows
S110, S120 and S130.
S110: the first wafer of each of multiple first wafers is obtained according to the influence factor collection of first wafer
The first parameter value collection of the influence factor collection is taken, and the first score collection is obtained according to the first parameter value collection, wherein is described
Influence factor collection includes multiple influence factors, and the first score collection includes multiple first scores, the multiple influence factor with
The multiple first score corresponds.
Specifically, S110 includes operation A: by the first parameter value of each influence factor of first wafer and default ginseng
Number -- the score table of comparisons is compared, corresponding to obtain first parameter value of each influence factor of first wafer
First score.
Multiple influence factors that influence factor integrates in the present embodiment as the size (influence factor 1) of wafer bow, receive by wafer
Contracting/expansion rate (influence factor 2), metal bonding face X-direction location error (influence factor 3), metal bonding face Y-direction position are missed
Poor (influence factor 4) and wafer thickness variation (influence factor 5).Certainly, in other embodiments, can be used above-mentioned multiple influences because
One or more influence factors as influence the first wafer and the second wafer bonding effect of element.
Corresponding with multiple influence factors, multiple first parameter values that the first parameter value in the present embodiment is concentrated are first
The corresponding wafer bow angle value of the wafer bow size of wafer, the corresponding contraction of the wafer shrink/expanded rate of the first wafer/swollen
Swollen value, the corresponding X position degree error amount of metal bonding face X-direction position error of the first wafer, the metallic bond of the first wafer
The wafer thickness of the corresponding Y location degree error amount of conjunction face Y-direction position error and the first wafer changes corresponding thickness change
Value.
Operate A: by the first parameter value and parameter preset -- the score table of comparisons of each influence factor of first wafer
It is compared, includes such as to obtain corresponding first score of first parameter value of each influence factor of first wafer
Under A1 and A2.
A1: a parameter preset -- the score table of comparisons is provided, as shown in table 1-1.
Table 1-1
| Factor score | 1 | 2 | 3 | 4 |
| Wafer bow size | - SL~-SL/2 | - SL/2~0 | 0~SL/2 | SL/2~SL |
| Shrink/expanded rate | - SL~-SL/2 | - SL/2~0 | 0~SI/2 | SL/2~SL |
| Metal bonding face X-direction location error | - SL~-SL/2 | - SL/2~0 | 0~SL/2 | SL/2~SL |
| Metal bonding face Y-direction location error | - SL~-SL/2 | - SL/2~0 | 0~SI/2 | SL/2~SL |
| Wafer thickness variation | - SL~-SL/2 | - SL/2~0 | 0~SL/2 | SL/2~SL |
Each influence factor when each wafer dispatches from the factory has corresponding factory specification limit, is indicated with SL, by each shadow
The factory specification limit SL of the factor of sound is equally divided into 4 small ranges, and the first specification limit is-SL~-SL/2, the second specification limit
For-SL/2~0, third specification limit is 0~SL/2, and the 4th specification limit is SL/2~SL.Corresponding point of first specification limit
Number is 1 point, and the corresponding score of the second specification limit is 2 points, and the corresponding score of third specification limit is 3 points, the 4th specification limit
Corresponding score is 4 points.
A2: by the first parameter value and parameter preset of each influence factor of first wafer -- the score table of comparisons carries out
Comparison obtains corresponding first score of first parameter value of each influence factor.
Specifically, if the first parameter value wafer bow value of the size of 1 wafer bow of influence factor is in the first specification limit
It is interior (or in the second specification limit/third specification limit in/the 4th specification limit in), then the size of 1 wafer bow of influence factor
Corresponding first score of the first parameter value be 1 point (or 2 points/3 points/4 points).
If the first parameter value shrink/expanded value of 2 wafer shrink/expanded rate of influence factor in the first specification limit (or
In second specification limit/third specification limit in/the 4th specification limit in), then the of 2 wafer shrink/expanded rate of influence factor
Corresponding first score of one parameter value is 1 point (or 2 points/3 points/4 points).
If the first parameter value X position degree error amount of 3 metal bonding face X-direction location error of influence factor is in the first specification
In range (or in the second specification limit/third specification limit in/the 4th specification limit in), then 3 metal bonding face X of influence factor
Corresponding first score of first parameter value of direction location error is 1 point (or 2 points/3 points/4 points).
If the first parameter value Y location degree error amount of 4 metal bonding face Y-direction location error of influence factor is in the first specification
In range (or in the second specification limit/third specification limit in/the 4th specification limit in), then 4 metal bonding face Y of influence factor
Corresponding first score of first parameter value of direction location error is 1 point (or 2 points/3 points/4 points).
If the first parameter value change value of thickness of 5 wafer thickness of influence factor variation is (or second in the first specification limit
In specification limit/third specification limit in/the 4th specification limit in), then the first parameter value of 5 wafer thickness of influence factor variation
Corresponding first score is 1 point (or 2 points/3 points/4 points).
First parameter value is obtained by pertinent instruments measurement.Specifically, the of each influence factor of the first wafer
One parameter value can be obtained by pertinent instruments measurement.That is, the size of the wafer bow of the first wafer, wafer contraction/
Expansion rate, metal bonding face X-direction location error, metal bonding face Y-direction location error and wafer thickness variation can lead to
It crosses corresponding apparatus measures and obtains corresponding value, measured by Correlative Influence Factors of the instrument to the first wafer, so as to
It is quickly obtained the first parameter value of the Correlative Influence Factors of the first wafer, production efficiency is improved, has saved time cost, and avoid
Error caused by artificially being measured to the Correlative Influence Factors of the first wafer, so that the relative influence of the first obtained wafer
First parameter value of factor is more accurate.
S120: the second wafer of each of multiple second wafers is obtained according to the influence factor collection of second wafer
The second parameter value collection of the influence factor collection is taken, and second point of the influence factor is obtained according to the second parameter value collection
Manifold, wherein second wafer has multiple influence factors, and corresponding one second score of each influence factor.
Specifically, S120 includes operation B: by the second parameter value of each influence factor of second wafer and default ginseng
Number -- the score table of comparisons is compared, corresponding to obtain second parameter value of each influence factor of second wafer
Second score.Multiple influence factors of influence factor collection and multiple influence factors of the first wafer are identical in the present embodiment, multiple
Influence factor is the size (influence factor 1) of wafer bow, wafer shrink/expanded rate (influence factor 2), the metal bonding face side X
To location error (influence factor 3), metal bonding face Y-direction location error (influence factor 4) and wafer thickness variation (influence because
Element is 5).Certainly, in other embodiments, the one or more as influencing the first wafers and the of above-mentioned multiple influence factors can be used
The influence factor of two wafer bonding effects.
Corresponding with multiple influence factors, multiple first parameter values that the second parameter value in the present embodiment is concentrated are second
The corresponding wafer bow angle value of the wafer bow size of wafer, the corresponding contraction of the wafer shrink/expanded rate of the second wafer/swollen
Swollen value, the corresponding X position degree error amount of metal bonding face X-direction position error of the second wafer, the metallic bond of the second wafer
The wafer thickness of the corresponding Y location degree error amount of conjunction face Y-direction position error and the second wafer changes corresponding thickness change
Value.
Operate B: by the second parameter value and parameter preset -- the score table of comparisons of each influence factor of second wafer
It is compared, includes such as to obtain corresponding second score of second parameter value of each influence factor of second wafer
Under B1 and B2.The process for obtaining the second score is similar with the process for obtaining the first score.
B1: providing a parameter preset -- the score table of comparisons, and the parameter preset -- the score table of comparisons is pre- with the first wafer
Setting parameter -- the score table of comparisons is identical, as shown in table 1-1.
Each influence factor when each wafer dispatches from the factory has corresponding factory specification limit, is indicated with SL, by each shadow
The factory specification limit SL of the factor of sound is equally divided into 4 small ranges, and the first specification limit is-SL~-SL/2, the second specification limit
For-SL/2~0, third specification limit is 0~SL/2, and the 4th specification limit is SL/2~SL.Corresponding point of first specification limit
Number is 1 point, and the corresponding score of the second specification limit is 2 points, and the corresponding score of third specification limit is 3 points, the 4th specification limit
Corresponding score is 4 points.
B2: by the second parameter value and parameter preset of each influence factor of second wafer -- the score table of comparisons carries out
Comparison obtains corresponding second score of second parameter value of each influence factor.
Specifically, if the second parameter value wafer bow angle value of the size of 1 wafer bow of influence factor is in the first specification model
In enclosing (or in the second specification limit/third specification limit in/the 4th specification limit in), then 1 wafer bow of influence factor is big
Corresponding second score of the second small parameter value is 1 point (or 2 points/3 points/4 points).
If the second parameter value shrink/expanded value of 2 wafer shrink/expanded rate of influence factor in the first specification limit (or
In second specification limit/third specification limit in/the 4th specification limit in), then the of 2 wafer shrink/expanded rate of influence factor
Corresponding second score of two parameter values is 1 point (or 2 points/3 points/4 points).
If the second parameter value X position degree error amount of 3 metal bonding face X-direction location error of influence factor is in the first specification
In range (or in the second specification limit/third specification limit in/the 4th specification limit in), then 3 metal bonding face X of influence factor
Corresponding second score of second parameter value of direction location error is 1 point (or 2 points/3 points/4 points).
If the second parameter value Y location degree error amount of 4 metal bonding face Y-direction location error of influence factor is in the first specification
In range (or in the second specification limit/third specification limit in/the 4th specification limit in), then 4 metal bonding face Y of influence factor
Corresponding second score of second parameter value of direction location error is 1 point (or 2 points/3 points/4 points).
If the second parameter value change value of thickness of 5 wafer thickness of influence factor variation is (or second in the first specification limit
In specification limit/third specification limit in/the 4th specification limit in), then the second parameter value of 5 wafer thickness of influence factor variation
Corresponding second score is 1 point (or 2 points/3 points/4 points).
Second parameter value is obtained by pertinent instruments measurement.Specifically, the of each influence factor of the second wafer
Two parameter values can be obtained by pertinent instruments measurement.That is, the size of the wafer bow of the second wafer, wafer contraction/
Expansion rate, metal bonding face X-direction location error, metal bonding face Y-direction location error and wafer thickness variation can lead to
It crosses corresponding apparatus measures and obtains corresponding value, measured by Correlative Influence Factors of the instrument to the second wafer, so as to
It is quickly obtained the second parameter value of the Correlative Influence Factors of the second wafer, production efficiency is improved, has saved time cost, and avoid
Error caused by artificially being measured to the Correlative Influence Factors of the second wafer, so that the relative influence of the second obtained wafer
Second parameter value of factor is more accurate.
S130: according to first score and corresponding second score of each second wafer from the multiple
It is chosen and matched second wafer of first wafer in two wafers.
In a kind of possible example, referring to Fig. 2, above-mentioned steps S130, according to first score and each described
Corresponding second score of second wafer is chosen brilliant with first wafer matched second from the multiple second wafer
Circle, it may include following S131 and S132.
S131: for first wafer, calculate the first score of each influence factor of first wafer with it is each
The influence factor of second wafer concentrates second point of influence factor identical with the influence factor of first wafer
Difference between number.
For example, the first parameter value with the size of 1 wafer bow of influence factor of the first wafer is first point corresponding
Corresponding second score of the second parameter value that number subtracts the size of 1 wafer bow of influence factor of the second wafer obtains difference 1.
Second is subtracted with corresponding first score of the first parameter value of the 2 wafer shrink/expanded rate of influence factor of the first wafer
Corresponding second score of second parameter value of the 2 wafer shrink/expanded rate of influence factor of wafer obtains difference 2.
With corresponding first score of the first parameter value of the 3 metal bonding face X-direction location error of influence factor of the first wafer
Corresponding second score of the second parameter value for subtracting the 3 metal bonding face X-direction location error of influence factor of the second wafer obtains difference
Value 3.
With corresponding first score of the first parameter value of the 4 metal bonding face Y location deflection error of influence factor of the first wafer
Corresponding second score of the second parameter value for subtracting the 4 metal bonding face Y location deflection error of influence factor of the second wafer obtains difference
Value 4.
Corresponding first score of the first parameter value changed with 5 wafer thickness of influence factor of the first wafer subtracts the second wafer
Corresponding second score of the second parameter value of 5 wafer thickness of influence factor variation obtain difference 5.
For example, the wafer bow size 4 of the first wafer 1 divides the wafer bow for subtracting the second wafer 1 as shown in table 1-2
It is 2 that degree size 2, which is divided to difference 1, and the shrink/expanded rate 1 of the first wafer 1 divides the shrink/expanded rate 3 for subtracting the second wafer 1 to divide
Obtaining difference 2 is -2, and the metal bonding face X-direction location error 3 of the first wafer 1 divides the metal bonding face X for subtracting the second wafer 1
It is 0 that direction location error 3, which is divided to difference 3, and the metal bonding face Y-direction location error 1 of the first wafer 1, which is divided, subtracts the second wafer
It is 0 that 1 metal bonding face Y-direction location error 1, which is divided to difference 4, and the wafer thickness of the first wafer 1 changes 1 point and subtracts second
The wafer thickness of wafer 1 change 1 point to difference 5 be -1.
Table 1-2
S132: matched second wafer of first wafer is obtained by the difference of each influence factor.
In a kind of possible example, referring to Fig. 3, above-mentioned steps S132, passes through the difference of each influence factor
Obtain matched second wafer of first wafer, it may include S1321 and S1322, S1321 and S1322 detailed step are such as
Under.
S1321: the absolute value of the difference of each influence factor is added, and obtains matching score.
Firstly, the absolute value of the difference for each influence factor that the influence factor is concentrated is added, do not obtain not
With score, that is, mismatch score=| difference 1 |+| difference 2 |+| difference 3 |+| difference 4 |+| difference 5 |.For example, shown in table 1-2,
The mismatch score of first wafer 1 and the second wafer 1=| 2 |+| -2 |+| 0 |+| 0 |+| -1 |=5.
Then, the mismatch score is subtracted with the sum of the full marks score of all influence factors that the influence factor is concentrated
The matching score is obtained, the full marks score of all influence factors is 20, that is, matching score=20- mismatches score, this implementation
In example, is subtracted with the sum of the full marks score of all influence factors and mismatch score and obtain the matching score and calculate to be more convenient, and
If matching score is that 20 the first wafers of explanation and the second wafer most match.For example, the first wafer 1 and second is brilliant shown in table 1-2
The matching score of circle 1 is 20-5=15.
The present embodiment calculates a collection of first wafer and every one first wafer and a collection of second wafer in a collection of second wafer
One-to-one matching score, a collection of first wafer are 25 the first wafers, and a collection of second wafer is 25 the second wafers.Pass through
The above method obtains every one first wafer, and with a collection of second wafer to match score correspondingly corresponding as shown in table 1-3.
Table 1-3
S1322: it is obtained and matched second wafer of first wafer according to the matching score.
Specifically, obtaining matched second wafer of each first wafer with a variety of according to the matching score
Embodiment, including but not limited to following embodiment.
In a kind of embodiment, matched second wafer of each first wafer is obtained according to the matching score
Method includes following C1 and C2.
C1: judge whether the matching score is greater than or equal to preset fraction.Preset fraction in the present embodiment can basis
Value 1~20 is actually needed.Optionally, preset fraction value is 16.
C2: when the matching score is greater than or equal to the preset fraction, confirm first wafer and described second
Wafer matching.If the matching score of first wafer and second wafer is more than or equal to 16, illustrate first wafer
It is matched with second wafer.
In another kind of embodiment, matched second wafer of each first wafer is obtained according to the matching score
Method is as follows.
All matching scores of first wafer are calculated by KM algorithm and determine that each first wafer is matched
Second wafer.
Specifically, to be that each first wafer and multiple second wafers correspond more for all matching scores
A matching score.
The basic principle of KM algorithm is to be converted into the problem of seeking Perfect matching the problem of seeking maximum weight matching.It is so-called complete
Standby matching is exactly that all the points (all first wafers in i.e. a collection of first wafer) that X point is concentrated have correspondence in bipartite graph
Matching and Y point concentrate all points (and all second wafers in a collection of second wafer) to have corresponding matching, then claiming should
Matching is Perfect matching.
If the top mark of vertex Xi (a collection of first wafer) is A [i] (the first wafer i), vertex Yj (a collection of second wafer)
Top mark be B [j] (the second wafer j), the side right between vertex Xi (a collection of first wafer) and Yj (a collection of second wafer) is w
[i, j] (matching score).Any moment during the execution of the algorithm, for any bar side (i, j), A [i]+B [j] >=w [i,
J] it sets up always.
The each institute analyzed by matching score of the KM algorithm to each pair of first wafer and the second wafer
Matched second wafer of the first wafer is stated, so that each first wafer has the second matching wafer, although having a
The matching score of other matched second wafer of first wafer will not be very high, but for multiple first wafers and multiple described
Second wafer generally, multiple first wafers and multiple second wafers which obtains matched scheme one by one
It is this whole maximum weight matching.The present embodiment carries out calculating matching, energy to the first wafer and the second wafer by KM algorithm
Quickly obtain with every matched second wafer of one first wafer, be greatly saved and manually calculate the matched time, improve production
Efficiency reduces production cost.
The matching process that middle corresponding wafer is made in the three-dimensional storage wafer bonding of the application is brilliant by obtaining each first
First score of the various factors in circle obtains the second score of the various factors in each second wafer, according to
First score and second score selection and matched second wafer of first wafer, to find and the first wafer
Matched second wafer, ensure that the bonding effect of subsequent first wafer and the second wafer, and do not need to the quality of wafer into
Row strict control also reduces production cost while improving production efficiency.
Referring to Fig. 4, Fig. 4 be a kind of flow diagram of three-dimensional storage preparation method provided by the present application, described three
Tieing up memory preparation method includes S210 and S220, and S210 and S220 are described in detail as follows.
S410: pass through the matching process determination and matched second wafer of the first wafer.
Specifically, being obtained and the first wafer by the matching process that middle corresponding wafer is made in three-dimensional storage wafer bonding
The method for the second wafer matched please refers to the matching process of middle corresponding wafer is made in above-mentioned three-dimensional storage wafer bonding first
Embodiment and second embodiment.
S420: by first wafer and with matched second wafer bonding of first wafer.
Specifically, the first wafer has the first bonding face, the first bonding face is by the first metal bonding face and the first insulation key
Conjunction face composition, the second wafer have the second bonding face, and the second bonding face is by the second metal bonding face and the second insulating bond face group
At.By second metallic bond in the first metal bonding face of the first wafer being mutually matched and the first insulating bond face and the second wafer
Conjunction face and the second insulating bond face carry out bonding technology after being respectively aligned to, so that the first bonding face of the first wafer and second is brilliant
Round the second bonding face connection.
The three-dimensional storage preparation method of the application is chosen by offer and every matched second wafer of one first wafer, then
First wafer and the second corresponding wafer are bonded.That is, the application passes through in the first wafer and the second crystalline substance
Round key selects multiple first wafers and multiple second wafers before closing, and selects matched first wafer and the second wafer carries out
Bonding, due to the first wafer being bonded and the second wafer be it is matched, ensure that the bonding of the first wafer and the second wafer
Effect, and do not need to carry out strict control to the quality of wafer, production cost is also reduced while improving production efficiency.
Fig. 5 is a kind of electronic equipment structural schematic diagram provided by the present application.As shown in figure 5, the electronic equipment 100 includes
First, which obtains module 10, second, obtains module 20 and matching module 30.First obtains module 10 in multiple first wafers
Each of the first wafer the first parameter value collection of the influence factor collection is obtained according to the influence factor collection of first wafer,
And the first score collection is obtained according to the first parameter value collection, wherein the influence factor collection includes multiple influence factors, described
First score collection includes multiple first scores, and the multiple influence factor and the multiple first score correspond.Second obtains
Modulus block 20 obtains institute according to the influence factor collection of second wafer for the second wafer of each of multiple second wafers
The second parameter value collection of influence factor collection is stated, and the second score of the influence factor is obtained according to the second parameter value collection
Collection, wherein second wafer has multiple influence factors, and corresponding one second score of each influence factor.
It is brilliant from the multiple second according to first score and corresponding second score of each second wafer with module 30
It is chosen and matched second wafer of first wafer in circle.First, which obtains module 10, second, obtains module 20 and matching module
Signal transmission between 30.For example, first module 10 is communicated to connect with the matching module 30, first obtains module 10 will
First score is transferred to the matching module 30, the matching module 30 receive described first obtain that module 10 sends the
One score.Second module 20 is communicated to connect with the matching module 30, and the second acquisition module 20 passes second score
It is defeated by the matching module 30, the matching module 30 receives described second and obtains the second score that module 20 is sent.
The application obtains module 10 by first and obtains the first score, and second, which obtains module 20, obtains the second score, matching
Module 30 chooses matched second wafer of the first wafer according to the first score and the second score, matches to find with the first wafer
The second wafer, ensure that the bonding effect of subsequent first wafer and the second wafer, and do not need to carry out the quality of wafer tight
Lattice control, also reduces production cost while improving production efficiency.
In the present embodiment, multiple influence factors that influence factor is concentrated are the size (influence factor 1) of wafer bow, brilliant
Circle shrink/expanded rate (influence factor 2), metal bonding face X-direction location error (influence factor 3), metal bonding face Y-direction position
Set error (influence factor 4) and wafer thickness variation (influence factor 5).Certainly, in other embodiments, above-mentioned multiple shadows can be used
One or more influence factors as influence the first wafer and the second wafer bonding effect of the factor of sound.
The first acquisition module 10 specifically by the first parameter value of each influence factor of first wafer and is preset
Parameter -- the score table of comparisons is compared, corresponding to obtain first parameter value of each influence factor of first wafer
The first score.Specifically, parameter preset -- the score table of comparisons (such as table 1-1) has been pre-stored in described first and has obtained module 10
In, the method for obtaining corresponding first score of the first parameter value of each influence factor of the first wafer is by the every of the first wafer
First parameter value of one influence factor with parameter preset -- the score table of comparisons compares, if the first parameter value is located at some parameter preset
Range, i.e. the first score of the first parameter value are the corresponding score of the preset parameter range.Described first obtains module 10 for the
First score of each influence factor of one wafer is sent to matching module 30.
The second acquisition module 20 specifically by the second parameter value of each influence factor of second wafer and is preset
Parameter -- the score table of comparisons is compared, corresponding to obtain second parameter value of each influence factor of second wafer
The second score.Specifically, parameter preset -- the score table of comparisons (such as table 1-1) has been pre-stored in the second acquisition module 20, is obtained
Method to corresponding second score of the second parameter value of each influence factor of the second wafer is by each shadow of the second wafer
Ring factor the second parameter value with parameter preset -- the score table of comparisons compares, if the second parameter value is located at some parameter preset model
It encloses, i.e. the second score of the second parameter value is the corresponding score of the preset parameter range.Second obtains module 20 for the second wafer
The second score of each influence factor be sent to matching module 30.
Fig. 6 is another electronic devices structure schematic diagram provided by the present application.As shown in fig. 6, the matching module 30 wraps
Include the first computing module 31 and the second computing module 32.First computing module 31 receive each influence of every one first wafer because
Second score of each influence factor of the first score and every one second wafer of element, for first wafer, described in calculating
The influence factor of first score of each influence factor of the first wafer and each second wafer is concentrated and first crystalline substance
Difference between second score of the round identical influence factor of the influence factor, and by the corresponding difference of each influence factor
It is sent to the second computing module 32.Pass through each shadow after the corresponding difference of the received each influence factor of second computing module 32
The difference of the factor of sound obtains matched second wafer of first wafer.
Specifically, 31 operational process of the first computing module is as follows.
Second is subtracted with corresponding first score of the first parameter value of the size of 1 wafer bow of influence factor of the first wafer
Corresponding second score of the second parameter value of the size of 1 wafer bow of influence factor of wafer obtains difference 1.
Second is subtracted with corresponding first score of the first parameter value of the 2 wafer shrink/expanded rate of influence factor of the first wafer
Corresponding second score of second parameter value of the 2 wafer shrink/expanded rate of influence factor of wafer obtains difference 2.
With corresponding first score of the first parameter value of the 3 metal bonding face X-direction location error of influence factor of the first wafer
Corresponding second score of the second parameter value for subtracting the 3 metal bonding face X-direction location error of influence factor of the second wafer obtains difference
Value 3.
With corresponding first score of the first parameter value of the 4 metal bonding face Y-direction location error of influence factor of the first wafer
Corresponding second score of the second parameter value for subtracting the 4 metal bonding face Y-direction location error of influence factor of the second wafer obtains difference
Value 4.
Corresponding first score of the first parameter value changed with 5 wafer thickness of influence factor of the first wafer subtracts the second wafer
Corresponding second score of the second parameter value of 5 wafer thickness of influence factor variation obtain difference 5.
Second computing module 32 includes the first sub- computing module 321 and the second sub- computing module 322, and the first son calculates
The absolute value of the difference of each influence factor is added by module 321, obtains matching score, and matching score is sent to the
Two sub- computing modules 322.Specifically, the first sub- computing module 321 includes adduction unit 3211 and scaling unit 3212, adduction is single
The absolute value of the difference for each influence factor that member 3211 concentrates the influence factor is added, and obtains mismatching score,
That is, mismatch score=| difference 1 |+| difference 2 |+| difference 3 |+| difference 4 |+| difference 5 |.The influence of scaling unit 3212
The sum of full marks score of all influence factors in set of factors subtracts the mismatch score and obtains the matching score, that is,
Score is mismatched with score=20-.
After the second sub- reception of computing module 322 obtains matching score, obtained and first crystalline substance according to the matching score
Matched second wafer of circle, including but not limited to following embodiment.
In a kind of embodiment, the second sub- computing module 322 includes judging unit 3221 and sub- matching unit 3222, is sentenced
Disconnected unit 3221 judges whether the matching score is greater than or equal to preset fraction, and judging result is issued sub- matching unit
3222.Sub- matching unit 3222 judges result after receiving judging result, when the matching score is more than or equal to described
When preset fraction, first wafer and second wafer matching are confirmed.Preset fraction in the present embodiment can be according to reality
Need value 1~20.Optionally, preset fraction value is 16.If the matching score of first wafer and second wafer
More than or equal to 16, then illustrate first wafer and second wafer matching.
In another embodiment, Fig. 7 is another electronic devices structure schematic diagram provided by the present application.As shown in fig. 7, institute
It is each specifically for all matching scores of first wafer are calculated determination by KM algorithm to state the second sub- computing module 322
Matched second wafer of first wafer.Specifically, all matching scores are each first wafer and multiple described
Multiple matching scores that second wafer corresponds.
The basic principle of KM algorithm is to be converted into the problem of seeking Perfect matching the problem of seeking maximum weight matching.It is so-called complete
Standby matching is exactly that all the points (all first wafers in i.e. a collection of first wafer) that X point is concentrated have correspondence in bipartite graph
Matching and Y point concentrate all points (and all second wafers in a collection of second wafer) to have corresponding matching, then claiming should
Matching is Perfect matching.
If the top mark of vertex Xi (a collection of first wafer) is A [i] (the first wafer i), vertex Yj (a collection of second wafer)
Top mark be B [j] (the second wafer j), the side right between vertex Xi (a collection of first wafer) and Yj (a collection of second wafer) is w
[i, j] (matching score).Any moment during the execution of the algorithm, for any bar side (i, j), A [i]+B [j] >=w [i,
J] it sets up always.
The each institute analyzed by matching score of the KM algorithm to each pair of first wafer and the second wafer
Matched second wafer of the first wafer is stated, so that each first wafer has the second matching wafer, although having a
The matching score of other matched second wafer of first wafer will not be very high, but for multiple first wafers and multiple described
Second wafer generally, multiple first wafers and multiple second wafers which obtains matched scheme one by one
It is this whole maximum weight matching.The present embodiment carries out calculating matching, energy to the first wafer and the second wafer by KM algorithm
Quickly obtain with every matched second wafer of one first wafer, be greatly saved and manually calculate the matched time, improve production
Efficiency reduces production cost.
The electronic equipment 100 first of the application obtains module 10 and obtains the first score, and second, which obtains module 20, obtains second
Score, matching module 30 choose matched second wafer of the first wafer according to the first score and the second score, to find and the
Matched second wafer of one wafer, ensure that the bonding effect of subsequent first wafer and the second wafer, and not need to wafer
Quality carries out strict control, also reduces production cost while improving production efficiency.
Fig. 8 is a kind of electronic equipment schematic diagram provided by the present application.As shown in figure 8, the electronic equipment 80 includes input
Device 81, one or more memories 83 and one or more processors 82, the input unit 81 is for receiving each first
First parameter value of the various factors in wafer, and it is also used to receive of the various factors in each second wafer
Two parameter values, one or more of memories 83 are stored with computer executable program, and the computer executable program can
It is called by one or more of processors 82, to execute the above method.To can quickly be obtained and the by the electronic equipment
Matched second wafer of one wafer, ensure that the bonding effect of subsequent first wafer and the second wafer, and not need to wafer
Quality carries out strict control, also reduces production cost while improving production efficiency.
The application also provides a kind of computer storage medium, is stored with computer executable program, when the computer can
When execution program is called, above-mentioned method can be performed, the computer storage medium can be obtained quickly and first is brilliant to pass through
Matched second wafer of circle, ensure that the bonding effect of subsequent first wafer and the second wafer, and do not need the quality to wafer
Strict control is carried out, also reduces production cost while improving production efficiency.
The embodiment of the present invention has been described in detail above, specific case used herein to the principle of the present invention and
Embodiment is expounded, and the above description of the embodiment is only used to help understand the method for the present invention and its core ideas；
At the same time, for those skilled in the art can in specific embodiments and applications according to the thought of the present invention
There is change place, in conclusion the contents of this specification are not to be construed as limiting the invention.
Claims (19)
1. the matching process that middle corresponding wafer is made in a kind of three-dimensional storage wafer bonding, which is characterized in that the matching process
Include:
The shadow is obtained according to the influence factor collection of first wafer for the first wafer of each of multiple first wafers
The first parameter value collection of set of factors is rung, and the first score collection is obtained according to the first parameter value collection, wherein the influence factor
Collection includes multiple influence factors, and the first score collection includes multiple first scores, the multiple influence factor with it is the multiple
First score corresponds；
The shadow is obtained according to the influence factor collection of second wafer for the second wafer of each of multiple second wafers
The second parameter value collection of set of factors is rung, and the second score collection of the influence factor is obtained according to the second parameter value collection,
In, second wafer has multiple influence factors, and corresponding one second score of each influence factor；And
According to first score and corresponding second score of each second wafer from the multiple second wafer
It chooses and matched second wafer of first wafer.
2. matching process as described in claim 1, which is characterized in that " for the first wafer of each of multiple first wafers,
According to the influence factor collection of first wafer, the first parameter value collection of the influence factor collection is obtained, and according to described first
Parameter value collection obtains the first score collection, wherein the influence factor collection includes multiple influence factors, and the first score collection includes
Multiple first scores, the multiple influence factor and the multiple first score correspond ", comprising:
By the first parameter value of each influence factor of first wafer and parameter preset -- the score table of comparisons is compared, with
Obtain corresponding first score of first parameter value of each influence factor of first wafer.
3. matching process as claimed in claim 2, which is characterized in that " for the second wafer of each of multiple second wafers,
According to the influence factor collection of second wafer, the second parameter value collection of the influence factor collection is obtained, and according to described second
Parameter value collection obtains the second score collection of the influence factor, wherein and second wafer has multiple influence factors, and
Each corresponding one second score of the influence factor ", comprising:
By the second parameter value of each influence factor of second wafer and parameter preset -- the score table of comparisons is compared, with
Obtain corresponding second score of second parameter value of each influence factor of second wafer.
4. matching process as claimed in claim 3, which is characterized in that " according to first score and each second crystalline substance
Corresponding second score of circle is chosen and matched second wafer of first wafer from the multiple second wafer ", packet
It includes:
For first wafer, the first score and each second crystalline substance of each influence factor of first wafer are calculated
Round influence factor concentrates the difference between the second score of the identical influence factor of the influence factor of first wafer
Value；And
Matched second wafer of first wafer is obtained by the difference of each influence factor.
5. matching process as claimed in claim 4, which is characterized in that " obtain institute by the difference of each influence factor
State matched second wafer of the first wafer ", comprising:
The absolute value of the difference of each influence factor is added, matching score is obtained；And
It is obtained and matched second wafer of first wafer according to the matching score.
6. matching process as claimed in claim 5, which is characterized in that " by the absolute value of the difference of each influence factor
It is added, obtains matching score ", comprising:
The absolute value of the difference for each influence factor that the influence factor is concentrated is added, and obtains mismatching score；With
And
It is subtracted described in the mismatchs score obtains with the sum of the full marks score of all influence factors that the influence factor is concentrated
Match score.
7. matching process as claimed in claim 6, which is characterized in that " obtained and first crystalline substance according to the matching score
Matched second wafer of circle ", comprising:
Judge whether the matching score is greater than or equal to preset fraction；And
When the matching score is greater than or equal to the preset fraction, first wafer and second wafer are confirmed
Match.
8. matching process as claimed in claim 6, which is characterized in that " obtained and first crystalline substance according to the matching score
Matched second wafer of circle ", comprising:
All matching scores of first wafer are calculated by KM algorithm and determine that each first wafer is matched described
Second wafer.
9. a kind of preparation method of three-dimensional storage, which is characterized in that the preparation method includes:
Pass through the described in any item matching process determinations of claim 1-8 and matched second wafer of the first wafer；And
By first wafer and with matched second wafer bonding of first wafer.
10. a kind of electronic equipment characterized by comprising
First obtains module, for for the first wafer of each of multiple first wafers, according to the influence of first wafer
Set of factors obtains the first parameter value collection of the influence factor collection, and obtains the first score collection according to the first parameter value collection,
Wherein, the influence factor collection includes multiple influence factors, and the first score collection includes multiple first scores, the multiple shadow
The factor of sound and the multiple first score correspond；
Second obtains module, for for the second wafer of each of multiple second wafers, according to the influence of second wafer
Set of factors, obtains the second parameter value collection of the influence factor collection, and according to the second parameter value collection obtain the influence because
Second score collection of element, wherein second wafer has multiple influence factors, and each influence factor corresponding one
Second score；And
Matching module, for according to first score and corresponding second score of each second wafer from described more
It is chosen and matched second wafer of first wafer in a second wafer.
11. electronic equipment as claimed in claim 10, which is characterized in that described first, which obtains module, is specifically used for described the
First parameter value of each influence factor of one wafer with parameter preset -- the score table of comparisons is compared, to obtain described first
Corresponding first score of first parameter value of each influence factor of wafer.
12. electronic equipment as claimed in claim 11, which is characterized in that described second, which obtains module, is specifically used for described the
Second parameter value of each influence factor of two wafers with parameter preset -- the score table of comparisons is compared, to obtain described second
Corresponding second score of second parameter value of each influence factor of wafer.
13. electronic equipment as claimed in claim 12, which is characterized in that the matching module includes:
First computing module, for calculating first point of each influence factor of first wafer for first wafer
It is several to concentrate influence factor identical with the influence factor of first wafer with the influence factor of each second wafer
The second score between difference；And
Second computing module obtains first wafer matched described second for the difference by each influence factor
Wafer.
14. electronic equipment as claimed in claim 13, which is characterized in that second computing module includes:
First sub- computing module obtains matching score for the absolute value of the difference of each influence factor to be added；And
Second sub- computing module, for being obtained and matched second wafer of first wafer according to the matching score.
15. electronic equipment as claimed in claim 14, which is characterized in that the first sub- computing module includes:
Unit is summed it up, the absolute value of the difference of each influence factor for concentrating the influence factor is added, obtains
Mismatch score；And
Scaling unit, the sum of the full marks score of all influence factors for being concentrated with the influence factor subtract the mismatch
Score obtains the matching score.
16. electronic equipment as claimed in claim 15, which is characterized in that the second sub- computing module includes:
Judging unit, for judging whether the matching score is greater than or equal to preset fraction；And
Sub- matching unit, for when the matching score is greater than or equal to the preset fraction, confirm first wafer with
The second wafer matching.
17. electronic equipment as claimed in claim 15, which is characterized in that the second sub- computing module is specifically used for will be by institute
All matching scores for stating the first wafer are calculated by KM algorithm determines each matched second wafer of first wafer.
18. a kind of electronic equipment, which is characterized in that the electronic equipment includes input unit, one or more memories and one
A or multiple processors, the input unit are used to receive the first parameter value of the various factors in each first wafer,
And it is also used to receive the second parameter value of the various factors in each second wafer, one or more of memory storages
There is computer executable program, the computer executable program can be called by one or more of processors, to execute such as
Method of any of claims 1-8.
19. a kind of computer storage medium, which is characterized in that computer executable program is stored with, when the computer can be held
When line program is called, such as method of any of claims 1-8 can be performed.
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