CN110501892B - Method and device for preparing chiral multi-lobe microstructure - Google Patents
Method and device for preparing chiral multi-lobe microstructure Download PDFInfo
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Abstract
The invention provides a preparation method and a device of a chiral multi-petal microstructure, belonging to the technical field of micro-nano manufacturing. The preparation method of the chiral multi-lobe microstructure comprises the following steps: calculating a hologram of the chiral multi-lobed microstructure; processing the photoresist material sample by using a femtosecond holographic processing system according to the hologram to obtain a chiral multi-petal microstructure sample to be developed; placing the chiral multi-petal microstructure sample to be developed into a developing solution for development to obtain a discrete externally-expanded chiral multi-petal microstructure; and after the discrete externally-expanded chiral multi-petal microstructure is taken out from the developing solution, the discrete externally-expanded chiral multi-petal microstructure is drawn inwards under the action of the capillary force of the developing solution remained on the surface, so that the discrete or assembled chiral multi-petal microstructure is obtained. According to the method and the device for preparing the chiral multi-lobe microstructure, provided by the invention, the femtosecond laser holographic high-efficiency processing technology and the capillary force driven self-assembly technology are combined, the preparation of the three-dimensional chiral multi-lobe microstructure can be flexibly and rapidly realized, and the processing efficiency is improved.
Description
Technical Field
The invention relates to the technical field of micro-nano manufacturing, in particular to a method and a device for preparing a chiral multi-lobe microstructure.
Background
Chirality, which represents a symmetric property of an object. A chiral structure means that the structure cannot be completely coincident with its mirror image by rotation or translation. Many chiral structures exist in nature, such as amino acids, DNA molecules, hands, shells, helical galaxies, and the like. Chiral structures are also used in a wide variety of applications in everyday life, such as screws, helical springs, helical stairs, helical blades, helical shafts, and the like. Under the micro-nano scale, the chiral structure has unique optical response characteristics, and the rapid preparation of diversified chiral micro-nano structures is a base stone for researching the optical characteristics of the chiral micro-nano structures.
With the development of micro-nano processing means, the chiral micro-nano structure is more and more conveniently prepared. At present, the processing means of the chiral micro-nano structure can be divided into two main categories, namely a top-down processing technology and a bottom-up assembly technology. For top-bottom-white processing techniques, femtosecond laser direct writing, photolithography, focused ion beam lithography, electron beam lithography, and the like are common. Relatively speaking, the femtosecond laser direct writing has the unique advantage of true three-dimensional processing and is an ideal chiral micro-nano structure processing means, but the femtosecond laser direct writing needs to adopt a single-focus scanning strategy, so that the processing efficiency is low and needs to be overcome. For the bottom-up assembly technology, the main principle is to use chiral materials to induce the formation of chiral micro-nano structures in a liquid phase environment, but the technology has the defects that the prepared chiral structures only adhere to the chiral materials, the required chiral structure monomers are difficult to obtain, and the forms of the chiral structure monomers cannot be freely controlled.
The preparation of the conventional chiral micro-nano structure is generally realized by utilizing a top-down processing technology or a bottom-up assembling technology, the prepared structure is generally integral and single-chiral, and the size and the height of the structure cannot be controlled randomly. Therefore, the two methods are combined simultaneously to realize the efficient preparation method of the diversified chiral micro-nano structure with the multi-lobe, controllable chirality, variable structure size and variable structure shape, and the method has significance in researching the optical characteristics of the chiral microstructure.
Disclosure of Invention
Technical problem to be solved
The invention provides a method and a device for preparing a chiral multi-lobe microstructure, which at least partially solve the technical problems.
(II) technical scheme
According to an aspect of the present invention, there is provided a method for preparing a chiral multi-lobed microstructure, the method comprising:
calculating a hologram of the chiral multi-lobed microstructure;
processing the photoresist material sample by using a femtosecond holographic processing system according to the hologram to obtain a chiral multi-petal microstructure sample to be developed;
placing the chiral multi-petal microstructure sample to be developed into a developing solution for development to obtain a discrete externally-expanded chiral multi-petal microstructure;
and after the discrete externally-expanded chiral multi-petal microstructure is taken out from the developing solution, the discrete externally-expanded chiral multi-petal microstructure is drawn inwards under the action of the capillary force of the developing solution remained on the surface, so that the discrete or assembled chiral multi-petal microstructure is obtained.
In some embodiments, a hologram of a chiral multi-lobed microstructure is computed, comprising:
setting the pixel size of a square hologram of the chiral multi-lobe microstructure, performing grid division on the square hologram, defining the pixel coordinates of each point on the square hologram, and initializing the total phase value of each pixel point;
adding an external circular mask with a proper radius according to the pixel size of the square hologram and the circular spot characteristics of the femtosecond laser beam, and shielding an invalid region outside the circular mask to obtain a circular hologram;
adding a central regular polygon mask pattern on the circular hologram according to a discrete superposition principle; calculating the phase value of any point outside the mask graph of the central regular polygon; converting the phase values into grey values and generating a hologram of the chiral multi-lobed microstructure.
In some embodiments, calculating the phase value of any point outside the central regular polygon mask pattern comprises:
selecting any vertex of the mask graph of the central regular polygon as an initial reference point;
calculating the pixel distance between any point outside the central regular polygon mask graph and the initial reference point;
calculating the azimuth angle of any point outside the central regular polygon mask graph relative to the initial reference point by using the pixel distance;
calculating the phase value of any point outside the central regular polygon mask graph relative to the initial reference point according to the azimuth angle, and accumulating the phase value to the total phase value;
updating the initial reference point according to a preset step pitch to obtain a new reference point, recalculating the phase value of any point outside the central regular polygon mask pattern relative to the new reference point according to the new reference point, and accumulating the phase value to the total phase value; and circulating the step until the new reference point returns to the initial reference point, wherein the obtained total phase value is the phase value of any point outside the central regular polygon mask pattern.
In some embodiments, calculating an azimuth angle of any point outside the central regular polygon mask pattern with respect to the reference point according to the azimuth angle comprises:
if any point outside the central regular polygon mask graph is located on the left side of the reference point, calculating the azimuth angle of any point outside the central regular polygon mask graph relative to the reference point by adopting a first calculation formula;
and if any point outside the central regular polygon mask graph is positioned on the right side of the reference point, calculating the azimuth angle of any point outside the central regular polygon mask graph relative to the reference point by adopting a second calculation formula.
In some embodiments, the discrete externally-expanded chiral multi-lobed microstructure is subjected to a capillary force of the developing solution to obtain a discrete or assembled chiral multi-lobed microstructure, and the method comprises:
when the height of the discrete externally-expanded chiral multi-petal microstructure is higher than the preset height, the discrete externally-expanded chiral multi-petal microstructure is acted by the capillary force of the developing solution to obtain an assembled chiral multi-petal microstructure;
when the height of the discrete externally-expanded chiral multi-petal microstructure is lower than the preset height, the discrete externally-expanded chiral multi-petal microstructure is still in a discrete state after the capillary force of the developing solution acts on the discrete externally-expanded chiral multi-petal microstructure.
According to another aspect of the present invention, there is provided an apparatus for preparing a chiral multi-lobed microstructure, the apparatus comprising:
a hologram calculation unit for calculating a hologram of the chiral multi-lobed microstructure;
the first acquisition unit is used for processing a photoresist material sample by using a femtosecond holographic processing system according to the hologram to obtain a chiral multi-petal microstructure sample to be developed;
the second obtaining unit is used for placing the chiral multi-petal microstructure sample to be developed into a developing solution for development to obtain a discrete externally-expanded chiral multi-petal microstructure;
and the third acquisition unit is used for taking out the discrete externally-expanded chiral multi-petal microstructure from the developing solution and drawing the discrete externally-expanded chiral multi-petal microstructure inwards under the action of the capillary force of the developing solution remaining on the surface to obtain the discrete or assembled chiral multi-petal microstructure.
In some embodiments, the hologram calculation unit includes:
the first setting subunit is used for setting the pixel size of the square hologram of the chiral multi-lobe microstructure, performing grid division on the square hologram, defining the pixel coordinates of each point on the square hologram, and initializing the total phase value of each pixel point;
the second setting subunit is used for adding an external circular mask with a preset radius according to the pixel size of the square hologram and the circular spot characteristics of the femtosecond laser beam, and shielding an invalid region outside the circular mask to obtain a circular hologram;
a mask pattern obtaining subunit, which adds a central regular polygon mask pattern on the circular hologram according to the discrete superposition principle;
the phase value calculating operator unit is used for calculating the phase value of any point outside the central regular polygon mask graph;
and the hologram acquisition subunit is used for converting the phase value into a gray value and generating the hologram of the chiral multi-lobe microstructure.
In some embodiments, the phase value operator unit comprises: a reference point selecting subunit, configured to select any vertex of the central regular polygon mask pattern as an initial reference point;
the pixel distance calculating subunit is used for calculating the pixel distance between any point outside the central regular polygon mask graph and the initial reference point;
the azimuth angle calculating subunit is used for calculating the azimuth angle of any point outside the central regular polygon mask graph relative to the initial reference point;
in some embodiments, the azimuth calculation subunit includes:
a left azimuth calculation unit, configured to calculate an azimuth of any point outside the central regular polygon mask pattern with respect to the reference point by using a first calculation formula if the any point outside the central regular polygon mask pattern is located on the left side of the reference point;
and the right azimuth angle calculation unit is used for calculating the azimuth angle of any point outside the central regular polygon mask graph relative to the reference point by adopting a second calculation formula if any point outside the central regular polygon mask graph is positioned on the right side of the reference point.
The phase value calculation operator unit is used for calculating the phase value of any point outside the central regular polygon mask graph relative to the initial reference point according to the azimuth angle and accumulating the phase value to the total phase value;
the phase value acquisition subunit updates the initial reference point according to a preset step pitch to obtain a new reference point, recalculates the phase value of any point outside the central regular polygon mask graph relative to the new reference point according to the new reference point, and accumulates the phase value to the total phase value; and circulating the step until the new reference point returns to the initial reference point, wherein the obtained total phase value is the phase value of any point outside the central regular polygon mask pattern.
In some embodiments, the third obtaining unit includes:
the assembly state obtaining subunit is used for obtaining the assembled chiral multi-petal microstructure after the discrete externally-expanded chiral multi-petal microstructure is acted by the capillary force of the developing solution when the height of the discrete externally-expanded chiral multi-petal microstructure is higher than a preset height;
and the discrete state acquisition subunit is used for enabling the discrete externally-expanded chiral multi-petal microstructure to be still in a discrete state after the capillary force action of the developing solution when the height of the discrete externally-expanded chiral multi-petal microstructure is lower than a preset height.
(III) advantageous effects
According to the technical scheme, the preparation method and the device of the chiral multi-lobe microstructure have at least one or part of the following beneficial effects:
(1) according to the method and the device for preparing the chiral multi-lobe microstructure, provided by the invention, the femtosecond laser holographic high-efficiency processing technology and the capillary force driven self-assembly technology are combined, the preparation of the three-dimensional chiral multi-lobe microstructure can be flexibly and rapidly realized, and the processing efficiency is improved.
(2) According to the preparation method and the device of the chiral multi-lobe microstructure, the number of lobes of the chiral multi-lobe microstructure is controlled by changing the shape of the central mask of the hologram; by changing the positive and negative of the topological charge number of the hologram, the processing of left and right double-hand structures can be realized; the lateral size of the chiral structure can be controlled by controlling the superposition times of the hologram, namely the topological charge number; by controlling the depth of exposure, the longitudinal dimension of the chiral structure can be controlled.
(3) According to the preparation method and the device of the chiral multi-lobe microstructure, the longitudinal size, namely the height, of the chiral multi-lobe microstructure is controlled, so that the form of the chiral structure driven by capillary force can be controlled to be in a discrete state or an assembly state.
Drawings
Fig. 1 is a flow chart of a method for preparing a chiral multi-lobed microstructure according to an embodiment of the present invention;
FIGS. 2A-2F illustrate a process for generating a hologram with a chiral three-lobed microstructure according to an embodiment of the present invention;
fig. 3A is a hologram of the number of topological charges under a mask with different circumscribed circle radii in a regular triangle mask (N-3) according to an embodiment of the present invention;
fig. 3B is a hologram of a regular quadrilateral mask (N-4), a regular pentagonal mask (N-5), and a regular hexagonal mask (N-6) according to an embodiment of the present invention;
FIG. 4 is a schematic diagram of a femtosecond holographic processing system provided in an embodiment of the invention;
fig. 5A is a light field simulation diagram of a hologram at different positions behind a lens 11(f is 600mm) in the processing system of fig. 3 when the mask (N is 3) is a regular triangle provided by an embodiment of the present invention;
fig. 5B is a light field simulation diagram of a regular quadrilateral mask (N-4), a regular pentagonal mask (N-5), and a regular hexagonal mask (N-6) at the focal point of the lens 11 according to an embodiment of the present invention;
fig. 6A is an electron microscope image of a processing structure of a regular triangle mask (N ═ 3) according to an embodiment of the present invention, which includes different sizes and shapes;
fig. 6B is an electron microscope image of a processed structure of a regular quadrilateral mask (N-4), a regular pentagonal mask (N-5), and a regular hexagonal mask (N-6) according to an embodiment of the present invention;
fig. 7 is a structural diagram of a device for preparing a chiral multi-lobed microstructure according to an embodiment of the present invention.
In the above figures, the reference numerals have the following meanings:
1-a laser; 2-a half-wave plate; 3-a polarization beam splitter prism; a 4, 5-lens; 6-optical shutter; 7-an attenuation sheet; 8-high-reflection lens; 9-a spatial light modulator; a 10, 12-lens; 11-a diaphragm; 13-a mirror; 14-oil lens; 15-pressing the radio station; 16-a photoresist sample; 17-halogen lamps; 18-CCD; 19-computer.
Detailed Description
In order that the objects, technical solutions and advantages of the present invention will become more apparent, the present invention will be further described in detail with reference to the accompanying drawings in conjunction with the following specific embodiments.
According to an aspect of the present invention, there is provided a method for preparing a chiral multi-lobed microstructure, as shown in fig. 1, the method comprising:
s11, calculating the hologram of the chiral multi-lobe microstructure;
s12, processing the photoresist material sample by using a femtosecond holographic processing system according to the hologram and the hologram to obtain a chiral multi-petal microstructure sample to be developed;
s13, placing the chiral multi-petal microstructure sample to be developed into a liquid developing solution for development to obtain a discrete externally-expanded chiral multi-petal microstructure;
and S14, taking out the dispersed externally-expanded chiral multi-petal microstructure from the developing solution, and drawing the dispersed or assembled chiral multi-petal microstructure inwards under the action of the capillary force of the developing solution remaining on the surface to obtain the dispersed or assembled chiral multi-petal microstructure.
According to the preparation method of the chiral multi-lobe microstructure, the femtosecond laser holographic high-efficiency processing technology and the capillary force driven self-assembly technology are combined, the preparation of the three-dimensional chiral multi-lobe microstructure can be flexibly and rapidly realized, and the processing efficiency is improved.
In this embodiment, step S11 specifically includes the following sub-steps:
setting the pixel size of a square hologram of a chiral multi-lobe microstructure, carrying out grid division on the square hologram, defining the pixel coordinates of each point on the square hologram, and initializing the total phase value of each pixel point;
adding an external circular mask with a preset radius according to the pixel size of the square hologram and the circular spot characteristics of the femtosecond laser beam, and shielding an invalid region outside the circular mask to obtain a circular hologram;
adding a central regular polygon mask pattern on the circular hologram according to the discrete superposition principle; the size of the central regular polygon mask is controlled by the radius of an external circle of the central regular polygon mask, and the coverage area of the central regular polygon mask is also shielded;
calculating the phase value of any point outside the mask graph of the central regular polygon;
the phase values are converted to grey values and holograms of chiral multi-lobed microstructures are generated.
Wherein, calculating the phase value of any point outside the mask pattern comprises:
selecting any vertex of the mask graph of the central regular polygon as an initial reference point; calculating the pixel distance between any point outside the central regular polygon mask graph and an initial reference point
Calculating the azimuth angle of any point outside the central regular polygon mask graph relative to the initial reference point by using the pixel distance: if any point of the central regular polygon mask pattern is located at the left side of the initial reference point, a first calculation formula theta is adopted as arccos (j-y0)/r]Calculating the azimuth angle of any point outside the mask graph relative to the initial reference point; if any point outside the central regular polygon mask pattern is located at the right side of the initial reference point, a second calculation formula theta 2 redundancy-arccos [ (j-y0)/r]Calculating the azimuth angle of any point outside the mask graph relative to the reference point, wherein j is the longitudinal coordinate of any point outside the central regular polygon mask graph, y0 is the longitudinal coordinate of the initial reference point, and r is the pixel distance between any point outside the central regular polygon mask graph and the initial reference point; updating the initial reference point according to a preset step pitch to obtain a new reference point, recalculating the phase value of any point outside the central regular polygon mask pattern relative to the new reference point according to the new reference point, and accumulating the phase value to a total phase value; and circulating the step until the new reference point returns to the initial reference point, wherein the obtained total phase value is the phase value of any point outside the central regular polygon mask pattern.
The preparation method of the chiral multi-lobe microstructure provided by the invention controls the number of lobes of the chiral multi-lobe microstructure by changing the shape of the central mask of the hologram; by changing the positive and negative of the topological charge number of the hologram, the processing of left and right double-hand structures can be realized; the lateral size of the chiral structure can be controlled by controlling the superposition times of the hologram, namely the topological charge number; by controlling the depth of exposure, the longitudinal dimension of the chiral structure can be controlled.
In this embodiment, step S14 specifically includes:
when the height of the discrete externally-expanded chiral multi-petal microstructure is higher than the preset height, the discrete externally-expanded chiral multi-petal microstructure is subjected to the capillary force action of a developing solution to obtain an assembled chiral multi-petal microstructure;
when the height of the discrete externally-expanded chiral multi-petal microstructure is lower than the preset height, the discrete externally-expanded chiral multi-petal microstructure is still in a discrete state after the capillary force of the developing solution acts on the discrete externally-expanded chiral multi-petal microstructure.
According to the preparation method of the chiral multi-petal microstructure, provided by the invention, the form of the chiral structure driven by capillary force can be controlled to be in a discrete state or an assembly state by controlling the longitudinal size, namely the height, of the chiral multi-petal microstructure.
In one embodiment, the generation of the calculation process of the central regular triangle mask hologram of the three-lobe chiral microstructure is as shown in fig. 2A-2F, and the calculation process is as follows:
1) the hologram size was set to 1080 × 1080 (unit: pixels), that is, the horizontal size column is 1080, the vertical size row is 1080, the mesh division is performed through a Matlab built-in function meshgrid, the coordinates are (0, 0) from the lower left corner, the coordinates are (1080) from the upper right corner, the coordinates are (540 ) from the upper right corner, the coordinates are (1080) from the center, the coordinates of the vertices of the mesh are (i, j), i, j e (0, 1080), and then the initial phase of each point of the hologram is set to zero by using phase1(i, j) from 0, i, j e (0, 1080), thereby generating a hologram background mesh, as shown in fig. 2A;
2) since the spot of the femtosecond laser is a circular gaussian spot, the effective use part of the hologram background in fig. 2A is an inner circle part with a radius R of 540 and a center coordinate of (540 ) as a center, and the outer circle part is shielded from a phase by a mask1(i, j) ═ 0, and is displayed in black, as shown in fig. 2B;
3) setting the coordinate value of the central pixel of the mask pattern as (540 ), corresponding to the coordinate value of the central pixel of the spatial light modulator (1080 × 1080), and the external connection of the mask patternRadius of circle r0R is selected in conjunction with hologram size0∈ (200, 500) is suitable, the mask shape can be regular triangle, regular quadrangle, regular pentagon, regular hexagon, which correspond to the processing of 3-lobe, 4-lobe, 5-lobe, 6-lobe chiral structures, respectively, as shown in FIG. 2C, taking regular triangle mask as an example, for a given circumscribed circle radius r0Then the coordinates of the three vertices are
Then the phase of the triangular inner region is shielded by a mask2(i, j) ═ 0, and the phase is displayed as black;
4) writing a phase outside the mask pattern from one vertex of the mask pattern, starting from any vertex of the mask pattern as a reference point, obtaining the coordinates of the reference point clockwise by the step distance dxy which is l/ntuopuhe, as shown in FIG. 2D, marking the position and the number of the reference point on each boundary of the mask triangle, wherein ntuopuhe ∈ (1, 20) represents the number of the reference points on each side, l is the side length of the mask pattern, and the coordinates of the current reference point are marked as (x)0，y0) If the pixel coordinates of any point except the mask region are (i, j) (i, j ∈ (1, 1080)), the pixel distance between the two points is r:
as shown in FIG. 2E;
a) when any point (i, j) is at the current reference point (x)0，y0) On the left side, i.e. i is less than or equal to x0Then, as shown in fig. 2E, the azimuth angle of the point with respect to the reference point is theta ═ arccos [ (j-y)0) (r), phase value is phase (i, j) ═ theta) × q;
b) when any point (i, j) is at the current reference point (x)0，y0) On the right, i.e. i > x0Then, as shown in fig. 2F, the azimuth angle of the point with respect to the reference point is theta ═ arccos [ (j-y)0)/r]The phase value is phase (i, j) ═ theta × q.
5) After the above operation is completed, the number of topological charges is increased by 1, and the phase value of any point (i, j) is updated according to phase1(i, j) ═ phase1(i, j) + phase (i, j); updating the reference point according to the given step distance dxy, and then repeating the process of 4) until the updated reference point returns to the starting reference point;
6) the numerical correspondence between the phase value phase1(i, j) of any point (i, j) and the gray value ho log rams tan dard (i, j), ho log rams tan dard (i, j) and phase1(i, j) is: ho log indexes (i, j) ═ mod (phase1(i, j) × 255/(2 × pi), 255), and the hologram was stored, resulting in the hologram shown in fig. 3A.
According to the method, the hologram with the mask shape of regular triangle, regular quadrangle, regular pentagon or regular hexagon can be obtained, as shown in fig. 3B, the number of the edges of the mask pattern corresponds to the number of lobes of the subsequent processing; the positive and negative of the topological charge number of the hologram determines the chiral direction of the processing structure; the magnitude of the absolute value of the topological charge number determines the size of the machined structure.
In one embodiment, using the femtosecond holographic processing system as shown in fig. 4, the process of processing the chiral three-lobed microstructure according to the hologram in fig. 3A is as follows:
1) preparing a sample to be processed: using SU2080 liquid photoresist as processing material, wherein the initial form of the material is liquid, dropping 10uL of liquid photoresist on a general glass slide by using a liquid transfer device, and then heating the glass slide on a hot plate, wherein the temperature is controlled at 100 ℃, and the heating time is 45min, so that the photoresist is completely cured;
2) processing a sample to be processed: the laser 1 generates femtosecond laser, and the polarization direction of the laser is controlled by the half-wave plate 2 and the polarization beam splitter prism 3 to obtain linearly polarized Gaussian light; then, the light beams are expanded through the lens groups 4 and 5 to match the panel size of the spatial light modulator 9; the optical shutter 6 is controlled by a computer 19 to realize the on-off of the light path, the energy of the light beam is controlled by an attenuation sheet 7, and the femtosecond laser beam with adjusted energy is reflected by a high-reflection lens 8 and then irradiates on a spatial light modulator 9; the spatial light modulator 9 is connected with a computer 19, a hologram played by the computer 19 can be loaded on the spatial light modulator 9, and a light beam is subjected to phase modulation according to hologram phase information, so that a required chiral discrete light field is generated by linear polarization Gaussian light modulation, the light field is condensed through lens groups 10 and 12 (the focal lengths of the lenses 10 and 12 are respectively 600mm and 200mm), only first-stage light of the chiral discrete light field enters a microscope system through a diaphragm 11, light of other stages is shielded, and the first-stage light enters a 60-fold oil lens 14 entrance pupil through a reflector 13 and vertically enters a photoresist sample 16 through focusing; the photoresist sample 16 is fixed on the pressure welding station 15 in a positive mode, and the computer 19 can control the movement of the pressure welding station 15 so as to adjust the spatial position of the light beam focus in the photoresist sample 16; the photoresist sample 16 emits fluorescence under the irradiation of the halogen lamp 17, is received by the CCD18 and then is transmitted to the computer 19, and the received image is displayed by a CCD driving program arranged on the computer 19, so that the monitoring of the processing progress can be realized. Wherein, the power of the light beam is detected by a power meter 5cm behind the diaphragm 11, and the power can be adjusted to a proper value by the attenuation sheet 7; the exposure time is 0.5s, the shutter 6 is controlled by the computer 19, as shown in fig. 5A, a regular triangle mask (N ═ 3), the light field simulation graphs of the holograms at different positions behind the lens 11(f ═ 600mm) in the processing system of fig. 3, and fig. 5B are the light field simulation graphs of the regular quadrilateral mask (N ═ 4), the regular pentagon mask (N ═ 5), and the regular hexagon mask (N ═ 6) at the focal point of the lens 11;
3) and (4) finishing the processing: fixing the pre-baked photoresist sample 16 on a pressing station 15, finding a focal plane under a 60-time oil lens 14, opening an optical gate 6, and carrying out two-photon polymerization on an area irradiated by a femtosecond laser chiral discrete light field in the photoresist sample 16 to obtain a discrete externally-expanded chiral multi-petal microstructure, wherein the unirradiated area is kept as the original.
In one embodiment, the processed photoresist sample 16 is developed in n-propanol for 30min, the unpolymerized areas are completely dissolved, and the polymerized areas remain; taking out the dispersed externally-expanded chiral microstructure, horizontally placing the photoresist sample 16 to enable the n-propanol remained on the surface of the photoresist sample to be quickly volatilized, wherein the photoresist sample 16 is subjected to liquid capillary force before the liquid is completely volatilized, and under the capillary force, when the height of the photoresist sample 16 is lower, the chiral microstructure is still dispersed; when the height of the photoresist sample 16 is high, the chiral microstructures self-assemble into a monolithic structure; as shown in fig. 6A, an electron micrograph showing the machined structure of a regular triangle mask (N ═ 3, q ═ 15, r0 ═ 350) includes both discrete and assembled forms; fig. 6B schematically shows an electron microscope image of an assembled structure of a regular quadrilateral mask (N ═ 4), a regular pentagonal mask (N ═ 5), and a regular hexagonal mask (N ═ 6).
The preparation method of the chiral multi-petal microstructure provided by the invention can adjust the form of the chiral multi-petal microstructure after the action of capillary force by controlling the height of the chiral multi-petal microstructure, and can present a discrete state and an assembly state.
According to another aspect of the present invention, there is provided an apparatus for preparing a chiral multi-lobed microstructure, as shown in fig. 7, the apparatus comprising:
a hologram calculation unit 71 for calculating a hologram of the chiral multi-lobed microstructure;
the first obtaining unit 72 is configured to process the photoresist material sample by using a femtosecond holographic processing system according to the hologram to obtain a chiral multi-petal microstructure sample to be developed;
the second obtaining unit 73 is configured to place the chiral multi-petal microstructure sample to be developed into a developing solution for development, so as to obtain a discrete externally-expanded chiral multi-petal microstructure;
and a third obtaining unit 74, configured to, after the discrete externally-expanded chiral multi-petal microstructure is taken out from the developer, obtain a discrete or assembled chiral multi-petal microstructure by inward gathering under the capillary force of the developer remaining on the surface.
According to the preparation device of the chiral multi-lobe microstructure, provided by the invention, the femtosecond laser holographic high-efficiency processing technology and the capillary force driven self-assembly technology are combined, the preparation of the three-dimensional chiral multi-lobe microstructure can be flexibly and rapidly realized, and the processing efficiency is improved.
In the present embodiment, the hologram calculation unit 71 includes the following sub-units:
the first setting subunit is used for setting the pixel size of the square hologram of the chiral multi-lobe microstructure, performing grid division on the square hologram, defining the pixel coordinates of each point on the square hologram, and initializing the total phase value of each pixel point;
the second setting subunit is used for adding an external circular mask with a proper radius according to the pixel size of the square hologram and the circular spot characteristics of the femtosecond laser beam, and shielding an invalid region outside the circular mask to obtain a circular hologram;
a mask pattern obtaining subunit, which adds a central regular polygon mask pattern on the circular hologram according to the discrete superposition principle;
the phase value calculating operator unit is used for calculating the phase value of any point outside the central regular polygon mask graph;
and the hologram acquisition subunit is used for converting the phase value into a gray value and generating the hologram of the chiral multi-lobe microstructure. Wherein, the phase value operator unit comprises: a reference point selection subunit, which selects any vertex of the central regular polygon mask graph as an initial reference point;
the pixel distance calculating subunit is used for calculating the pixel distance between any point outside the central regular polygon mask graph and an initial reference point;
the azimuth angle calculating subunit is used for calculating the azimuth angle of any point outside the central regular polygon mask graph relative to the initial reference point;
the phase value calculation operator unit is used for calculating the phase value of any point outside the central regular polygon mask graph relative to an initial reference point according to the azimuth angle and accumulating the phase value to a total phase value;
the phase value acquisition subunit updates the initial reference point according to a preset step pitch to obtain a new reference point, recalculates the phase value of any point outside the central regular polygon mask graph relative to the new reference point according to the new reference point, and accumulates the phase value to a total phase value; and circulating the step until the new reference point returns to the initial reference point, wherein the obtained total phase value is the phase value of any point outside the central regular polygon mask pattern. The azimuth angle calculation subunit further includes:
the left azimuth angle calculating unit is used for calculating the azimuth angle of any point outside the central regular polygon mask graph relative to the reference point by adopting a first calculation formula if any point outside the central regular polygon mask graph is positioned on the left side of the reference point;
and the right azimuth angle calculating unit is used for calculating the azimuth angle of any point outside the central regular polygon mask graph relative to the reference point by adopting a second calculation formula if any point outside the central regular polygon mask graph is positioned on the right side of the reference point. According to the preparation device of the chiral multi-lobe microstructure, the number of lobes of the chiral multi-lobe microstructure is controlled by changing the shape of the central mask of the hologram; by changing the positive and negative of the topological charge number of the hologram, the processing of left and right double-hand structures can be realized; the lateral size of the chiral structure can be controlled by controlling the superposition times of the hologram, namely the topological charge number; by controlling the depth of exposure, the longitudinal dimension of the chiral structure can be controlled.
In the present embodiment, the third acquiring unit 74 includes the following sub-units:
the assembly state obtaining subunit is used for obtaining the assembled chiral multi-petal microstructure after the discrete externally-expanded chiral multi-petal microstructure is acted by capillary force of a developing solution when the height of the discrete externally-expanded chiral multi-petal microstructure is higher than a preset height;
and the discrete state acquisition subunit is used for enabling the discrete externally-expanded chiral multi-petal microstructure to be still a discrete state chiral multi-petal microstructure after the capillary force action of the developing solution when the height of the discrete externally-expanded chiral multi-petal microstructure is lower than the preset height.
According to the preparation device of the chiral multi-petal microstructure, provided by the invention, the form of the chiral structure driven by capillary force can be controlled into two states of dispersion and assembly by controlling the longitudinal size, namely the height, of the chiral multi-petal microstructure.
Up to this point, the present embodiment has been described in detail with reference to the accompanying drawings. From the above description, those skilled in the art should clearly recognize the present invention.
It is to be noted that, in the attached drawings or in the description, the implementation modes not shown or described are all the modes known by the ordinary skilled person in the field of technology, and are not described in detail.
It is also noted that the illustrations herein may provide examples of parameters that include particular values, but that these parameters need not be exactly equal to the corresponding values, but may be approximated to the corresponding values within acceptable error tolerances or design constraints. The directional terms used in the embodiments are only directions referring to the drawings, and are not intended to limit the scope of the present invention. In addition, unless steps are specifically described or must occur in sequence, the order of the steps is not limited to that listed above and may be changed or rearranged as desired by the desired design. The embodiments described above may be mixed and matched with each other or with other embodiments based on design and reliability considerations, i.e., technical features in different embodiments may be freely combined to form further embodiments.
It should be noted that throughout the drawings, like elements are represented by like or similar reference numerals. In the above description, some specific embodiments are only used for descriptive purposes and should not be construed as limiting the invention in any way, but merely as exemplifications of embodiments of the invention. Conventional structures or constructions will be omitted when they may obscure the understanding of the present invention. It should be noted that the shapes and sizes of the respective components in the drawings do not reflect actual sizes and proportions, but merely illustrate the contents of the embodiments of the present invention.
The above-mentioned embodiments are intended to illustrate the objects, technical solutions and advantages of the present invention in further detail, and it should be understood that the above-mentioned embodiments are only exemplary embodiments of the present invention, and are not intended to limit the present invention, and any modifications, equivalents, improvements and the like made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (8)
1. A method of making a chiral multi-lobed microstructure, the method comprising:
calculating a hologram of the chiral multi-lobed microstructure;
processing the photoresist material sample by using a femtosecond holographic processing system according to the hologram to obtain a chiral multi-petal microstructure sample to be developed;
placing the chiral multi-petal microstructure sample to be developed into a developing solution for development to obtain a discrete externally-expanded chiral multi-petal microstructure;
after the discrete externally-expanded chiral multi-petal microstructure is taken out of the developing solution, the discrete externally-expanded chiral multi-petal microstructure is drawn inwards under the action of the capillary force of the developing solution remaining on the surface to obtain a discrete or assembled chiral multi-petal microstructure;
wherein, the hologram of the chiral multi-lobe microstructure is calculated by the following steps:
setting the pixel size of a square hologram of the chiral multi-lobe microstructure, performing grid division on the square hologram, defining the pixel coordinates of each point on the square hologram, and initializing the total phase value of each pixel point;
adding an external circular mask with a preset radius according to the pixel size of the square hologram and the circular spot characteristics of the femtosecond laser beam, and shielding an invalid region outside the circular mask to obtain a circular hologram;
adding a central regular polygon mask pattern on the circular hologram according to a discrete superposition principle;
calculating the phase value of any point outside the mask graph of the central regular polygon;
converting the phase values into grey values and generating a hologram of the chiral multi-lobed microstructure.
2. The method of claim 1, wherein calculating the phase value of any point outside the central regular polygon mask pattern comprises:
selecting any vertex of the mask graph of the central regular polygon as an initial reference point;
calculating the pixel distance between any point outside the central regular polygon mask graph and the initial reference point;
calculating the azimuth angle of any point outside the central regular polygon mask graph relative to the initial reference point by using the pixel distance;
calculating the phase value of any point outside the central regular polygon mask graph relative to the initial reference point according to the azimuth angle, and accumulating the phase value to a total phase value;
updating the initial reference point according to a preset step pitch to obtain a new reference point, recalculating the phase value of any point outside the central regular polygon mask pattern relative to the new reference point according to the new reference point, and accumulating the phase value to the total phase value; and circulating the step until the new reference point returns to the initial reference point, wherein the obtained total phase value is the phase value of any point outside the central regular polygon mask pattern.
3. The method of claim 2, wherein calculating an azimuth angle of any point outside the central regular polygon mask pattern with respect to the reference point based on the azimuth angle comprises:
if any point outside the central regular polygon mask graph is located on the left side of the reference point, calculating the azimuth angle of any point outside the central regular polygon mask graph relative to the reference point by adopting a first calculation formula;
and if any point outside the central regular polygon mask graph is positioned on the right side of the reference point, calculating the azimuth angle of any point outside the central regular polygon mask graph relative to the reference point by adopting a second calculation formula.
4. The method of claim 1, wherein the discrete externally-expanded chiral multi-lobed microstructure is subjected to a capillary force of the developing solution to obtain a discrete or assembled chiral multi-lobed microstructure, and the method comprises:
when the height of the discrete externally-expanded chiral multi-petal microstructure is higher than the preset height, the discrete externally-expanded chiral multi-petal microstructure is acted by the capillary force of the developing solution to obtain an assembled chiral multi-petal microstructure;
when the height of the discrete externally-expanded chiral multi-petal microstructure is lower than the preset height, the discrete externally-expanded chiral multi-petal microstructure is still in a discrete state after the capillary force of the developing solution acts on the discrete externally-expanded chiral multi-petal microstructure.
5. An apparatus for making a chiral multi-lobed microstructure, the apparatus comprising:
a hologram calculation unit for calculating a hologram of the chiral multi-lobed microstructure;
the first acquisition unit is used for processing a photoresist material sample by using a femtosecond holographic processing system according to the hologram to obtain a chiral multi-petal microstructure sample to be developed;
the second obtaining unit is used for placing the chiral multi-petal microstructure sample to be developed into a developing solution for development to obtain a discrete externally-expanded chiral multi-petal microstructure;
the third acquisition unit is used for taking out the discrete externally-expanded chiral multi-petal microstructure from the developing solution and drawing the discrete externally-expanded chiral multi-petal microstructure inwards under the action of the capillary force of the developing solution remaining on the surface to obtain a discrete or assembled chiral multi-petal microstructure;
wherein the hologram calculation unit includes:
the first setting subunit is used for setting the pixel size of the square hologram of the chiral multi-lobe microstructure, performing grid division on the square hologram, defining the pixel coordinates of each point on the square hologram, and initializing the total phase value of each pixel point;
the second setting subunit is used for adding an external circular mask with a preset radius according to the pixel size of the square hologram and the circular spot characteristics of the femtosecond laser beam, and shielding an invalid region outside the circular mask to obtain a circular hologram;
the mask pattern obtaining subunit is used for adding a central regular polygon mask pattern on the circular hologram according to a discrete superposition principle;
the phase value calculating operator unit is used for calculating the phase value of any point outside the central regular polygon mask graph;
and the hologram acquisition subunit is used for converting the phase value into a gray value and generating the hologram of the chiral multi-lobe microstructure.
6. The apparatus of claim 5, wherein the phase value operator unit comprises:
a reference point selecting subunit, configured to select any vertex of the central regular polygon mask pattern as an initial reference point;
the pixel distance calculating subunit is used for calculating the pixel distance between any point outside the central regular polygon mask graph and the initial reference point;
the azimuth angle calculating subunit is used for calculating the azimuth angle of any point outside the central regular polygon mask graph relative to the initial reference point;
the phase value calculation operator unit is used for calculating the phase value of any point outside the central regular polygon mask graph relative to the initial reference point according to the azimuth angle and accumulating the phase value to the total phase value;
the phase value acquisition subunit updates the initial reference point according to a preset step pitch to obtain a new reference point, recalculates the phase value of any point outside the central regular polygon mask graph relative to the new reference point according to the new reference point, and accumulates the phase value to the total phase value; and circulating the step until the new reference point returns to the initial reference point, wherein the obtained total phase value is the phase value of any point outside the central regular polygon mask pattern.
7. The apparatus of claim 6, wherein the azimuth angle calculation subunit comprises:
a left azimuth calculation unit, configured to calculate an azimuth of any point outside the central regular polygon mask pattern with respect to the reference point by using a first calculation formula if the any point outside the central regular polygon mask pattern is located on the left side of the reference point;
and the right azimuth angle calculation unit is used for calculating the azimuth angle of any point outside the central regular polygon mask graph relative to the reference point by adopting a second calculation formula if any point outside the central regular polygon mask graph is positioned on the right side of the reference point.
8. The apparatus of claim 5, wherein the third obtaining unit comprises:
the assembly state obtaining subunit is used for obtaining the assembled chiral multi-petal microstructure after the discrete externally-expanded chiral multi-petal microstructure is acted by the capillary force of the developing solution when the height of the discrete externally-expanded chiral multi-petal microstructure is higher than a preset height;
and the discrete state acquisition subunit is used for enabling the discrete externally-expanded chiral multi-petal microstructure to be still in a discrete state after the capillary force action of the developing solution when the height of the discrete externally-expanded chiral multi-petal microstructure is lower than a preset height.
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