CN110499103A - A kind of sapphire lapping liquid and preparation method thereof - Google Patents
A kind of sapphire lapping liquid and preparation method thereof Download PDFInfo
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- CN110499103A CN110499103A CN201910863072.1A CN201910863072A CN110499103A CN 110499103 A CN110499103 A CN 110499103A CN 201910863072 A CN201910863072 A CN 201910863072A CN 110499103 A CN110499103 A CN 110499103A
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- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
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Abstract
The invention belongs to gem processing technical fields, and in particular to a kind of sapphire lapping liquid and preparation method thereof.The sapphire lapping liquid includes following content of component: 35-48 parts of silica, 28-32 parts of silicon carbide, 18-25 parts of aluminum oxide, 14-21 parts of boron nitride, 8-15 parts of chitosan, 8-14 parts of titanium diboride, 12-18 parts of glycerol, 7-11 parts of polyethylene glycol, 6-9 parts of carbon black, 6-9 parts of vermiculite power, 4-7 parts of surfactant, 3-5 parts of dispersing agent, 150-180 parts of deionized water.Lapping liquid prepared by the present invention can effectively shorten milling time, and preparation method of the invention is simple and effective, be suitble to industrialized production.
Description
Technical field
The invention belongs to gem processing technical fields, and in particular to a kind of sapphire lapping liquid and preparation method thereof.
Background technique
Sapphire lapping liquid (also known as sapphire polishing liquid) is for the grinding and thinned grinding in Sapphire Substrate
Liquid.Lapping liquid is scattered in medium by abrasive grain and is prepared, and is a kind of abrasive product with excellent chemical mechanical performance, can be used for
The grinding and polishing of silicon wafer, compound crystal, precision optics, liquid crystal display panel, jewel, metal works etc..Abrasive grain is lapping liquid
The key factor of mechanism, variety classes, varigrained abrasive grain ground effect are different, are suitable for different processing requests.
Abrasive hardness is higher in general, particle is bigger, and grinding efficiency is higher, processed surface smoothness is lower；Opposite abrasive hardness
It is lower, particle is smaller, grinding efficiency is lower, processed surface smoothness is higher.Medium is the carrier of abrasive grain, affects abrasive grain
The effects of dispersing, playing the role of cooling, chip removal in process, chemical attack can be also played sometimes.
Summary of the invention
In view of the deficiencies of the prior art, the present invention provides a kind of sapphire lapping liquid and preparation method thereof, present invention preparation
Lapping liquid can effectively shorten milling time, and preparation method of the invention is simple and effective, is suitble to industrialized production.
In order to achieve the above object, the present invention is achieved by the following technical programs:
A kind of sapphire lapping liquid, including following content of component: 35-48 parts of silica, 28-32 parts of silicon carbide, three oxidations
Two 18-25 parts of aluminium, 14-21 parts of boron nitride, 8-15 parts of chitosan, 8-14 parts of titanium diboride, 12-18 parts of glycerol, polyethylene glycol 7-
11 parts, 6-9 parts of carbon black, 6-9 parts of vermiculite power, 4-7 parts of surfactant, 3-5 parts of dispersing agent, 150-180 parts of deionized water.
Preferably, the sapphire lapping liquid includes following content of component: 38 parts of silica, 30 parts of silicon carbide, three
22 parts of Al 2 O, 18 parts of boron nitride, 12 parts of chitosan, 11 parts of titanium diboride, 15 parts of glycerol, 9 parts of polyethylene glycol, 8 parts of carbon black,
8 parts of vermiculite power, 6 parts of surfactant, 4 parts of dispersing agent, 160 parts of deionized water.
Preferably, the sapphire lapping liquid includes following content of component: 45 parts of silica, 31 parts of silicon carbide, three
22 parts of Al 2 O, 18 parts of boron nitride, 13 parts of chitosan, 9 parts of titanium diboride, 15 parts of glycerol, 9 parts of polyethylene glycol, 7 parts of carbon black,
8 parts of vermiculite power, 5 parts of surfactant, 3 parts of dispersing agent, 170 parts of deionized water.
Preferably, partial size≤50nm of the silica, partial size≤50nm of the silicon carbide, the titanium diboride
Partial size≤50nm.
A kind of preparation method of sapphire lapping liquid, comprising the following steps:
(1) raw material is weighed, it is spare；
(2) by silica, silicon carbide, aluminum oxide, boron nitride, titanium diboride, carbon black and vermiculite power successively milled processed,
Obtain nano silica, nanometer silicon carbide, nano-aluminium oxide, nm-class boron nitride, nano titanium diboride, nano carbon black and
Nanometer vermiculite powder；By nano silica, nanometer silicon carbide, nano-aluminium oxide, nm-class boron nitride, nano titanium diboride,
Nano carbon black and nanometer vermiculite powder are uniformly mixed and secondary milled processed, obtains mixture；
(3) mixture is dissolved in deionized water, 150-200 DEG C at a temperature of, stirred with the revolving speed of 600-1000r/min
1-2 hours, chitosan, glycerol and polyethylene glycol is added, 120-150 DEG C at a temperature of, stirred with the revolving speed of 600-800r/min
It mixes 1.5-3 hours；Surfactant and dispersing agent is added, 80-120 DEG C at a temperature of, stirred with the revolving speed of 600-800r/min
30-40min is mixed, obtains sapphire lapping liquid after cooling.
Preferably, the step of step (3) are as follows: mixture is dissolved in deionized water, 180 at a temperature of,
Stirred 1.5 hours with the revolving speed of 800r/min, chitosan, glycerol and polyethylene glycol be added, 130 DEG C at a temperature of, with 700r/
The revolving speed of min stirs 2 hours；Surfactant and dispersing agent is added, 110 DEG C at a temperature of, stirred with the revolving speed of 700r/min
35min is mixed, obtains sapphire lapping liquid after cooling.
Preferably, the step of step (3) are as follows: mixture being dissolved in deionized water, in 190 DEG C of temperature
Under, stirred 1.2 hours with the revolving speed of 900r/min, chitosan, glycerol and polyethylene glycol be added, 145 DEG C at a temperature of, with
The revolving speed of 650r/min stirs 2.5 hours；Surfactant and dispersing agent is added, 100 DEG C at a temperature of, with 650r/min's
Revolving speed stirs 35min, obtains sapphire lapping liquid after cooling.
Compared with prior art, the invention has the following advantages: lapping liquid prepared by the present invention can effectively contract
Short milling time, and preparation method of the invention is simple and effective, is suitble to industrialized production.
Specific embodiment
Below by specific embodiment, invention is further described in detail.But those skilled in the art will manage
Solution, the following example is merely to illustrate the present invention, and should not be taken as limiting the scope of the invention.Specific skill is not specified in embodiment
Art or condition person, described technology or conditions carry out to specifications according to the literature in the art.Agents useful for same or instrument
Production firm person is not specified, being can be with conventional products that are commercially available.
Embodiment 1
A kind of sapphire lapping liquid, including following content of component: 35-48 parts of silica, 28 parts of silicon carbide, aluminum oxide
18 parts, 14 parts of boron nitride, 8 parts of chitosan, 8 parts of titanium diboride, 12 parts of glycerol, 7 parts of polyethylene glycol, 6 parts of carbon black, 6 parts of vermiculite power,
4 parts of surfactant, 3 parts of dispersing agent, 150 parts of deionized water.
Wherein, partial size≤50nm of the silica, partial size≤50nm of the silicon carbide, the grain of the titanium diboride
Diameter≤50nm.
A kind of preparation method of sapphire lapping liquid, comprising the following steps:
(1) raw material is weighed, it is spare；
(2) by silica, silicon carbide, aluminum oxide, boron nitride, titanium diboride, carbon black and vermiculite power successively milled processed,
Obtain nano silica, nanometer silicon carbide, nano-aluminium oxide, nm-class boron nitride, nano titanium diboride, nano carbon black and
Nanometer vermiculite powder；By nano silica, nanometer silicon carbide, nano-aluminium oxide, nm-class boron nitride, nano titanium diboride,
Nano carbon black and nanometer vermiculite powder are uniformly mixed and secondary milled processed, obtains mixture；
(3) mixture is dissolved in deionized water, 150 DEG C at a temperature of, stirred 1 hour, added with the revolving speed of 600r/min
Enter chitosan, glycerol and polyethylene glycol, 120 DEG C at a temperature of, stirred 1.5 hours with the revolving speed of 600r/min；Surface is added
Activating agent and dispersing agent, 80 DEG C at a temperature of, 30min is stirred with the revolving speed of 600r/min, sapphire grinding is obtained after cooling
Liquid.
Embodiment 2
A kind of sapphire lapping liquid, including following content of component: 48 parts of silica, 32 parts of silicon carbide, aluminum oxide 25
Part, 21 parts of boron nitride, 15 parts of chitosan, 14 parts of titanium diboride, 18 parts of glycerol, 11 parts of polyethylene glycol, 9 parts of carbon black, vermiculite power 9
Part, 7 parts of surfactant, 5 parts of dispersing agent, 180 parts of deionized water.
Wherein, partial size≤50nm of the silica, partial size≤50nm of the silicon carbide, the grain of the titanium diboride
Diameter≤50nm.
A kind of preparation method of sapphire lapping liquid, comprising the following steps:
(1) raw material is weighed, it is spare；
(2) by silica, silicon carbide, aluminum oxide, boron nitride, titanium diboride, carbon black and vermiculite power successively milled processed,
Obtain nano silica, nanometer silicon carbide, nano-aluminium oxide, nm-class boron nitride, nano titanium diboride, nano carbon black and
Nanometer vermiculite powder；By nano silica, nanometer silicon carbide, nano-aluminium oxide, nm-class boron nitride, nano titanium diboride,
Nano carbon black and nanometer vermiculite powder are uniformly mixed and secondary milled processed, obtains mixture；
(3) mixture is dissolved in deionized water, 200 DEG C at a temperature of, stirred 2 hours, added with the revolving speed of 1000r/min
Enter chitosan, glycerol and polyethylene glycol, 150 DEG C at a temperature of, stirred 3 hours with the revolving speed of 800r/min；It is living that surface is added
Property agent and dispersing agent, 120 DEG C at a temperature of, 40min is stirred with the revolving speed of 800r/min, sapphire grinding is obtained after cooling
Liquid.
Embodiment 3
A kind of sapphire lapping liquid, including following content of component: 38 parts of silica, 30 parts of silicon carbide, aluminum oxide 22
Part, 18 parts of boron nitride, 12 parts of chitosan, 11 parts of titanium diboride, 15 parts of glycerol, 9 parts of polyethylene glycol, 8 parts of carbon black, 8 parts of vermiculite power,
6 parts of surfactant, 4 parts of dispersing agent, 160 parts of deionized water.
Wherein, partial size≤50nm of the silica, partial size≤50nm of the silicon carbide, the grain of the titanium diboride
Diameter≤50nm.
A kind of preparation method of sapphire lapping liquid, comprising the following steps:
(1) raw material is weighed, it is spare；
(2) by silica, silicon carbide, aluminum oxide, boron nitride, titanium diboride, carbon black and vermiculite power successively milled processed,
Obtain nano silica, nanometer silicon carbide, nano-aluminium oxide, nm-class boron nitride, nano titanium diboride, nano carbon black and
Nanometer vermiculite powder；By nano silica, nanometer silicon carbide, nano-aluminium oxide, nm-class boron nitride, nano titanium diboride,
Nano carbon black and nanometer vermiculite powder are uniformly mixed and secondary milled processed, obtains mixture；
(3) mixture is dissolved in deionized water, 180 at a temperature of, stirred 1.5 hours, added with the revolving speed of 800r/min
Enter chitosan, glycerol and polyethylene glycol, 130 DEG C at a temperature of, stirred 2 hours with the revolving speed of 700r/min；It is living that surface is added
Property agent and dispersing agent, 110 DEG C at a temperature of, 35min is stirred with the revolving speed of 700r/min, sapphire grinding is obtained after cooling
Liquid.
Embodiment 4
A kind of sapphire lapping liquid, including following content of component: 45 parts of silica, 31 parts of silicon carbide, aluminum oxide 22
Part, 18 parts of boron nitride, 13 parts of chitosan, 9 parts of titanium diboride, 15 parts of glycerol, 9 parts of polyethylene glycol, 7 parts of carbon black, 8 parts of vermiculite power,
5 parts of surfactant, 3 parts of dispersing agent, 170 parts of deionized water.
Wherein, partial size≤50nm of the silica, partial size≤50nm of the silicon carbide, the grain of the titanium diboride
Diameter≤50nm.
A kind of preparation method of sapphire lapping liquid, comprising the following steps:
(1) raw material is weighed, it is spare；
(2) by silica, silicon carbide, aluminum oxide, boron nitride, titanium diboride, carbon black and vermiculite power successively milled processed,
Obtain nano silica, nanometer silicon carbide, nano-aluminium oxide, nm-class boron nitride, nano titanium diboride, nano carbon black and
Nanometer vermiculite powder；By nano silica, nanometer silicon carbide, nano-aluminium oxide, nm-class boron nitride, nano titanium diboride,
Nano carbon black and nanometer vermiculite powder are uniformly mixed and secondary milled processed, obtains mixture；
(3) mixture is dissolved in deionized water, 190 DEG C at a temperature of, stirred 1.2 hours with the revolving speed of 900r/min,
Chitosan, glycerol and polyethylene glycol is added, 145 DEG C at a temperature of, stirred 2.5 hours with the revolving speed of 650r/min；Table is added
Face activating agent and dispersing agent, 100 DEG C at a temperature of, 35min is stirred with the revolving speed of 650r/min, sapphire is obtained after cooling and grinds
Grinding fluid.
Comparative example 1
For step with embodiment 4, difference is to be not added with carbon black.
A kind of sapphire lapping liquid, including following content of component: 45 parts of silica, 31 parts of silicon carbide, three oxidations two
22 parts of aluminium, 18 parts of boron nitride, 13 parts of chitosan, 9 parts of titanium diboride, 15 parts of glycerol, 9 parts of polyethylene glycol, 7 parts of carbon black, vermiculite power 8
Part, 5 parts of surfactant, 3 parts of dispersing agent, 170 parts of deionized water.
Wherein, partial size≤50nm of the silica, partial size≤50nm of the silicon carbide, the grain of the titanium diboride
Diameter≤50nm.
A kind of preparation method of sapphire lapping liquid, comprising the following steps:
(1) raw material is weighed, it is spare；
(2) it by silica, silicon carbide, aluminum oxide, boron nitride, titanium diboride and vermiculite power successively milled processed, obtains
Nano silica, nanometer silicon carbide, nano-aluminium oxide, nm-class boron nitride, nano titanium diboride and nanometer vermiculite powder；It will
Nano silica, nanometer silicon carbide, nano-aluminium oxide, nm-class boron nitride, nano titanium diboride and nanometer vermiculite powder are mixed
Uniform and secondary milled processed is closed, mixture is obtained；
(3) mixture is dissolved in deionized water, 190 DEG C at a temperature of, stirred 1.2 hours with the revolving speed of 900r/min,
Chitosan, glycerol and polyethylene glycol is added, 145 DEG C at a temperature of, stirred 2.5 hours with the revolving speed of 650r/min；Table is added
Face activating agent and dispersing agent, 100 DEG C at a temperature of, 35min is stirred with the revolving speed of 650r/min, sapphire is obtained after cooling and grinds
Grinding fluid.
Comparative example 2
For step with embodiment 4, difference is not added with chitosan.
A kind of sapphire lapping liquid, including following content of component: 45 parts of silica, 31 parts of silicon carbide, three oxidations two
22 parts of aluminium, 18 parts of boron nitride, 13 parts of chitosan, 9 parts of titanium diboride, 15 parts of glycerol, 9 parts of polyethylene glycol, 7 parts of carbon black, vermiculite power 8
Part, 5 parts of surfactant, 3 parts of dispersing agent, 170 parts of deionized water.
Wherein, partial size≤50nm of the silica, partial size≤50nm of the silicon carbide, the grain of the titanium diboride
Diameter≤50nm.
A kind of preparation method of sapphire lapping liquid, comprising the following steps:
(1) raw material is weighed, it is spare；
(2) by silica, silicon carbide, aluminum oxide, boron nitride, titanium diboride, carbon black and vermiculite power successively milled processed,
Obtain nano silica, nanometer silicon carbide, nano-aluminium oxide, nm-class boron nitride, nano titanium diboride, nano carbon black and
Nanometer vermiculite powder；By nano silica, nanometer silicon carbide, nano-aluminium oxide, nm-class boron nitride, nano titanium diboride,
Nano carbon black and nanometer vermiculite powder are uniformly mixed and secondary milled processed, obtains mixture；
(3) mixture is dissolved in deionized water, 190 DEG C at a temperature of, stirred 1.2 hours with the revolving speed of 900r/min,
Glycerol and polyethylene glycol is added, 145 DEG C at a temperature of, stirred 2.5 hours with the revolving speed of 650r/min；Surfactant is added
And dispersing agent, 100 DEG C at a temperature of, 35min is stirred with the revolving speed of 650r/min, obtains sapphire lapping liquid after cooling.
Sapphire lapping liquid obtained by embodiment 1-4 and comparative example 1-2 is subjected to grinding test, test effect is as follows: in indigo plant
In gem grinding treatment process, the resulting lapping liquid of embodiment 1-4 is compared with the lapping liquid of comparative example 1-2: milling time shortens
30 minutes or more, cleannes were improved.
The above is only preferred embodiments of the present invention, is not intended to limit the scope of the present invention,
Therefore any trickle amendment, equivalent variations and modification made to the above embodiment according to the technical essence of the invention, belong to
In the range of technical solution of the present invention.
Claims (7)
1. a kind of sapphire lapping liquid, which is characterized in that including following content of component: 35-48 parts of silica, silicon carbide
28-32 parts, 18-25 parts of aluminum oxide, 14-21 parts of boron nitride, 8-15 parts of chitosan, 8-14 parts of titanium diboride, glycerol 12-18
Part, 7-11 parts of polyethylene glycol, 6-9 parts of carbon black, 6-9 parts of vermiculite power, 4-7 parts of surfactant, 3-5 parts of dispersing agent, deionized water
150-180 parts.
2. a kind of sapphire lapping liquid according to claim 1, which is characterized in that including following content of component: dioxy
38 parts of SiClx, 30 parts of silicon carbide, 22 parts of aluminum oxide, 18 parts of boron nitride, 12 parts of chitosan, 11 parts of titanium diboride, glycerol 15
Part, 9 parts of polyethylene glycol, 8 parts of carbon black, 8 parts of vermiculite power, 6 parts of surfactant, 4 parts of dispersing agent, 160 parts of deionized water.
3. a kind of sapphire lapping liquid according to claim 1, which is characterized in that including following content of component: dioxy
45 parts of SiClx, 31 parts of silicon carbide, 22 parts of aluminum oxide, 18 parts of boron nitride, 13 parts of chitosan, 9 parts of titanium diboride, glycerol 15
Part, 9 parts of polyethylene glycol, 7 parts of carbon black, 8 parts of vermiculite power, 5 parts of surfactant, 3 parts of dispersing agent, 170 parts of deionized water.
4. a kind of sapphire lapping liquid according to claim 1, which is characterized in that the partial size of the silica≤
50nm, partial size≤50nm of the silicon carbide, partial size≤50nm of the titanium diboride.
5. a kind of preparation method of sapphire lapping liquid described in claim 1-4 any claim, which is characterized in that including
Following steps:
(1) raw material is weighed, it is spare；
(2) by silica, silicon carbide, aluminum oxide, boron nitride, titanium diboride, carbon black and vermiculite power successively milled processed,
Obtain nano silica, nanometer silicon carbide, nano-aluminium oxide, nm-class boron nitride, nano titanium diboride, nano carbon black and
Nanometer vermiculite powder；By nano silica, nanometer silicon carbide, nano-aluminium oxide, nm-class boron nitride, nano titanium diboride,
Nano carbon black and nanometer vermiculite powder are uniformly mixed and secondary milled processed, obtains mixture；
(3) mixture is dissolved in deionized water, 150-200 DEG C at a temperature of, stirred with the revolving speed of 600-1000r/min
1-2 hours, chitosan, glycerol and polyethylene glycol is added, 120-150 DEG C at a temperature of, stirred with the revolving speed of 600-800r/min
It mixes 1.5-3 hours；Surfactant and dispersing agent is added, 80-120 DEG C at a temperature of, stirred with the revolving speed of 600-800r/min
30-40min is mixed, obtains sapphire lapping liquid after cooling.
6. a kind of preparation method of sapphire lapping liquid according to claim 5, which is characterized in that the step (3)
Steps are as follows: mixture is dissolved in deionized water, 180 at a temperature of, stirred 1.5 hours with the revolving speed of 800r/min,
Chitosan, glycerol and polyethylene glycol is added, 130 DEG C at a temperature of, stirred 2 hours with the revolving speed of 700r/min；Surface is added
Activating agent and dispersing agent, 110 DEG C at a temperature of, 35min is stirred with the revolving speed of 700r/min, sapphire grinding is obtained after cooling
Liquid.
7. a kind of preparation method of sapphire lapping liquid according to claim 5, which is characterized in that the step (3)
Steps are as follows: mixture is dissolved in deionized water, 190 DEG C at a temperature of, it is small with the stirring 1.2 of the revolving speed of 900r/min
When, chitosan, glycerol and polyethylene glycol is added, 145 DEG C at a temperature of, stirred 2.5 hours with the revolving speed of 650r/min；It is added
Surfactant and dispersing agent, 100 DEG C at a temperature of, 35min is stirred with the revolving speed of 650r/min, obtains sapphire after cooling
Lapping liquid.
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Application publication date: 20191126 |