CN107953148A - It is a kind of based on the sapphire wafer polishing method for including neodymium compound mild abrasives fixation grinding tool - Google Patents

It is a kind of based on the sapphire wafer polishing method for including neodymium compound mild abrasives fixation grinding tool Download PDF

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Publication number
CN107953148A
CN107953148A CN201711220952.4A CN201711220952A CN107953148A CN 107953148 A CN107953148 A CN 107953148A CN 201711220952 A CN201711220952 A CN 201711220952A CN 107953148 A CN107953148 A CN 107953148A
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China
Prior art keywords
grinding tool
neodymium compound
sapphire wafer
neodymium
sapphire
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Pending
Application number
CN201711220952.4A
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Chinese (zh)
Inventor
吕冰海
张韬杰
邓乾发
杭伟
曹霖霖
陈芝向
黄晟
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Zhejiang University of Technology ZJUT
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Zhejiang University of Technology ZJUT
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Priority to CN201711220952.4A priority Critical patent/CN107953148A/en
Publication of CN107953148A publication Critical patent/CN107953148A/en
Pending legal-status Critical Current

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B1/00—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B55/00—Safety devices for grinding or polishing machines; Accessories fitted to grinding or polishing machines for keeping tools or parts of the machine in good working condition
    • B24B55/02—Equipment for cooling the grinding surfaces, e.g. devices for feeding coolant
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
    • B24D18/00—Manufacture of grinding tools or other grinding devices, e.g. wheels, not otherwise provided for
    • B24D18/0009—Manufacture of grinding tools or other grinding devices, e.g. wheels, not otherwise provided for using moulds or presses

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Polishing Bodies And Polishing Tools (AREA)

Abstract

It is a kind of based on the sapphire wafer polishing method for including neodymium compound mild abrasives fixation grinding tool, comprise the following steps：1) based on the preparation for including neodymium compound mild abrasives fixation grinding tool raw material：Nano silicon dioxide 40%~60%, binding agent 20%~40%, curing agent 10%~15%, neodymium compound 5%~10%, remaining be deionized water；2) by the raw material configured hot forming in a mold, heat cure is completed after the demoulding, and its upper and lower end face is repaired；3) grinding tool is installed on to the upper disk of polishing machine, sapphire wafer to be processed is placed on the rotating polishing machine lower wall of meeting, is fixed with fixture, starts polishing machine, and water base coolant is injected between upper lower burrs；Neodymium compound and silica abrasive grain on grinding tool scratch sapphire face and solid phase reaction occur, and realize the polishing to sapphire wafer.The removal rate that the present invention can improve sapphire wafer can simultaneously reduce roughness, improve processing efficiency, reduce production cost.

Description

It is a kind of to be polished based on the sapphire wafer for including neodymium compound mild abrasives fixation grinding tool Method
Technical field
The present invention relates to efficient, the high quality polished method of a kind of polishing method, especially sapphire wafer.
Background technology
Sapphire, also known as white stone, have identical optical characteristics and mechanical characteristic with natural gemstone, there is good heat Characteristic, fabulous electrical characteristic and dielectric property, and anti-chemical corrosion, it is high to infrared light transmission, have good wearability, Hardness is only second to diamond, is 9 grades of Mohs, still has preferable stability at high temperature, fusing point is 2030 degrees Celsius, extensive Applied to fields such as industry, national defence, scientific researches, the substrate of Solid State Laser, infrared window, semiconductor chip is increasingly being used as The manufacture material of part in the high-tech sectors such as piece, accurate anti-friction bearing is such as ground-to-ground, the infrared window of ground-to-air missile, high Window of temperature and pressure dependent sensor etc..
Sapphire since hardness is big and brittleness is big, to it be machined extremely difficult, and Wafer Machining is more multiple It is miscellaneous.Sapphire wafer processing technology in China's has following shortcoming in batch production at present：1. sapphire sheet in process Removal efficiency is low；2. after polishing, sapphire sheet surface roughness is high.
Sapphire surface currently on the market is Ultraprecise polished, its polishing composition abrasive material main component is nanometer titanium dioxide Silicon.In alkaline conditions, nano silicon dioxide and sapphire surface form alumina silicate, under the action of mechanical force to sapphire into Row grinding, polishing.Due to sapphire high rigidity and extremely strong corrosion resistance, processing efficiency and surface quality are improved all the time It is the problem in sapphire process, and due to the free abrasive used now, it is therein using last handling process complexity Chemical substance easily produces pollution to environment.For a long time, surface quality is good, polishing removal rate is high, the polishing method of environmental protection The hot spot always studied.Therefore, the present invention provides a kind of removal rate is high, machined surface roughness is low based on including neodymium The sapphire wafer polishing method of thing mild abrasives fixation grinding tool.
The content of the invention
The purpose of the invention is to overcome the shortcomings of that existing sapphire wafer polishing efficiency is low, of high cost, the present invention carries It is low based on including neodymium compound mild abrasives fixation grinding tool for a kind of machined surface quality, high in machining efficiency, production cost Sapphire wafer polishing method.
The technical solution adopted by the present invention to solve the technical problems is：
A kind of sapphire wafer polishing method for the mild abrasives fixation grinding tool for including neodymium compound, the polishing method include Following steps：
1) preparation of neodymium compound mild abrasives fixation grinding tool raw material is included：Nano silicon dioxide 40%~60%, binding agent 20%~40%, curing agent 10%~15%, neodymium compound 5%~10%, remaining be deionized water；
2) making of neodymium compound mild abrasives fixation grinding tool is included：Curing agent is added in deionized water, and stirring makes it Dissolving, then adds bonding agent, nano silicon dioxide, neodymium compound, is stirred for uniformly；The dispensing configured is hot in a mold Pressing formation, completes heat cure after the demoulding, and its upper and lower end face is repaired, ensure the flatness of grinding tool upper and lower end face with it is parallel Degree；
3) polishing of the neodymium compound mild abrasives fixation grinding tool to sapphire wafer is included：Neodymium compound mild abrasives will be included to consolidate The upper disk that grinding tool is installed on polishing machine, sapphire wafer to be processed is placed on the rotating polishing machine lower wall of meeting, is consolidated with fixture Live calmly, start polishing machine, and alkaline water-based coolant is injected between upper lower burrs；Include on neodymium compound mild abrasives fixation grinding tool Neodymium compound and abrasive particle sapphire face is scratched and solid phase reaction occurs, realize the polishing to sapphire wafer.
Further, in the step 3), under the action of pressure and relative velocity, neodymium compound is both a kind of catalyst, Sapphire wafer and the energy needed for silicon dioxde reaction are reduced, while again can be with abrasive material and sapphire material as reactant Generation solid phase reaction, generates one layer of reaction product layer that is soft, easily removing, and using between subsequent abrasive and generation nitride layer Rubbing action will generate nitride layer remove, so as to fulfill the polishing of sapphire wafer.
Preferably, the bonding agent is magnesia.
Preferably, the curing agent is magnesium chloride, phenolic aldehyde-acetal resin and phenolic aldehyde-epoxy resin.
Preferably, the granularity of the nano silicon dioxide is 80~100nm.
Preferably, the neodymium compound is neodymium nitrate, neodymium chloride, neodymia or neodymium fluoride, is nano powdery particle.
The present invention technical concept be：Using the hardness mild abrasives and neodymium compound lower than sapphire wafer hardness, match somebody with somebody It is made fixed abrasive material grinding tool, in process, neodymium compound is both a kind of catalyst, and it is anti-with silica to reduce sapphire wafer Required energy is answered, while solid phase reaction can occur between mild abrasives and sapphire wafer again as reactant, blue precious Stone wafer surface forms one layer of reaction product layer that is soft, easily removing, and using between subsequent abrasive and generation nitride layer Rubbing action will generate nitride layer and remove, and so as to fulfill the polishing of sapphire wafer, compared to pure silicon dioxide, its reaction is more Easily carry out, can be easier and produce more soft, reaction products for easily removing, make processing roughness lower.Meanwhile by The hardness of sapphire wafer is far below in used abrasive material and neodymium compound hardness, therefore this processing method will not be to sapphire Chip causes diamond, boron carbide, carborundum such as pit, cut caused by when hard abrasive machining sapphire wafer and micro- The surface damages such as crackle, therefore improve the processing quality of sapphire wafer.Meanwhile neodymium compound, silica and sapphire lead to It is relatively low to cross curing reaction generation hardness, the Nd easily removed2Al2Si3O12, so as to improve the polishing efficiency of sapphire wafer, make this Polishing method has the advantages that polishing effect is good, removal rate is high, can meet the requirement of sapphire polishing.
Using the solid phase reaction between abrasive material, neodymium compound and sapphire wafer, while neodymium ion is to sapphire and titanium dioxide The solid phase reaction of silicon can play catalytic action, improve its reaction speed, Sapphire wafer surface formed one layer it is soft, easily remove Reaction product layer, and using subsequent abrasive and generate nitride layer between rubbing action will generate nitride layer remove, so as to fulfill The efficient polishing of sapphire wafer.It following present 1. silica (SiO2), 2. neodymium nitrate, 3. deionized water and sapphire material Expect the solid phase reaction equation occurred under alkaline environment：
Nd3++3OH-=Nd (OH)3 (1)
Al2O3+2Nd(OH)3=2NdAlO3+3H2O (3)
SiO2+2NdAlO3+Al2Si2O7.H2O=Nd2Al2Si3O12+2AlOOH (4)
Beneficial effects of the present invention are shown：The present invention makes it lead to silica and sapphire by adding neodymium compound Cross curing reaction and generate the Nd that more hardness are relatively low, easily remove2Al2Si3O12.Meanwhile neodymium ion can play catalytic action, accelerate The reaction of sapphire and silica, so as to improve the polishing efficiency of sapphire wafer.Using alkaline water-based cold in polishing process But liquid is cooled down and lubricated, and has good environmental protection characteristic, the grinding tool is had polishing removal rate height, machined surface roughness The advantages of low, environmentally friendly, can meet the requirement of sapphire polishing.
Brief description of the drawings
Fig. 1 is grinding tool schematic diagram.
Fig. 2 is process principle schematic diagram.
Fig. 3 is processing unit (plant) schematic diagram.
Embodiment
The present invention is described further below in conjunction with the accompanying drawings.
With reference to Fig. 1~Fig. 3, a kind of sapphire wafer polishing method for the mild abrasives fixation grinding tool for including neodymium compound, institute Polishing method is stated to comprise the following steps：
1) preparation of neodymium compound mild abrasives fixation grinding tool raw material is included：Nano silicon dioxide 40%~60%, binding agent 20%~40%, curing agent 10%~15%, neodymium compound 5%~10%, remaining be deionized water；
2) making of neodymium compound mild abrasives fixation grinding tool is included：Curing agent is added in deionized water, and stirring makes it Dissolving, then adds bonding agent, nano silicon dioxide, neodymium compound, is stirred for uniformly；The dispensing configured is hot in a mold Pressing formation, completes heat cure after the demoulding, and its upper and lower end face is repaired, ensure the flatness of grinding tool upper and lower end face with it is parallel Degree；
3) polishing of the neodymium compound mild abrasives fixation grinding tool to sapphire wafer is included：Neodymium compound mild abrasives will be included to consolidate The upper disk that grinding tool is installed on polishing machine, sapphire wafer to be processed is placed on the rotating polishing machine lower wall of meeting, is consolidated with fixture Live calmly, start polishing machine, and alkaline water-based coolant is injected between upper lower burrs；Include on neodymium compound mild abrasives fixation grinding tool Neodymium compound and abrasive particle sapphire face is scratched and solid phase reaction occurs, realize the polishing to sapphire wafer.
Further, in the step 3), under the action of pressure and relative velocity, neodymium compound is both a kind of catalyst, Sapphire wafer and the energy needed for silicon dioxde reaction are reduced, while again can be with abrasive material and sapphire material as reactant Generation solid phase reaction, generates one layer of reaction product layer that is soft, easily removing, and using between subsequent abrasive and generation nitride layer Rubbing action will generate nitride layer remove, so as to fulfill the polishing of sapphire wafer.
Preferably, the bonding agent is magnesia.
Preferably, the curing agent is magnesium chloride, phenolic aldehyde-acetal resin and phenolic aldehyde-epoxy resin.
Preferably, the granularity of the nano silicon dioxide is 80~100nm.
Preferably, the neodymium compound is neodymium nitrate, neodymium chloride, neodymia or neodymium fluoride, is nano powdery particle.
With reference to Fig. 1, wherein 4. gap of mixture of 1. silica, 2. neodymium compound, 3. bonding agent and curing agent.Reference Fig. 2, 6. silica 7. of wherein 5. neodymium compound is newly-generated to obtain 8 sapphire wafers of Nd2Al2Si3O12.With reference to Fig. 3, polishing disk on 9. 10. grinding tool 11. sapphire wafer, 12. times polishing disks.
The present embodiment is chosen at the polishing that sapphire wafer is carried out on polishing machine.Embodiment condition is as shown in table 1.It is interior The fixation grinding tool of mild abrasives containing neodymium compound employs nanometer titanium dioxide silicone content 50%, neodymium nitrate content 5% and nanometer titanium dioxide Silicone content 60%, neodymium nitrate content 5%, other making and machined parameters all same.Respectively the soft of neodymium compound is included with both Matter abrasive material fixation grinding tool pairSapphire wafer be polished.In polishing process using alkaline water-based coolant into Row cooling and lubrication.
Table 1
Table 2 shows the processing result of sapphire wafer in embodiment.The results show that the sapphire wafer in the present embodiment Removal rate is stablized, and compared with traditional polishing process, material removing rate is almost 4-5 times under the same conditions.In the present embodiment In, sapphire wafer is polished using the fixed grinding tool of nanometer titanium dioxide silicone content 50%, neodymium nitrate content 5%, surface Roughness is 4-8nm, using nanometer titanium dioxide silicone content 60%, neodymium nitrate content 5% fixed grinding tool to sapphire wafer into Row polishing, surface roughness 4-7nm, will be substantially better than the surface roughness that conventional polishing process obtains.This shows to include The mild abrasives fixation grinding tool polishing method of neodymium compound is in terms of the Sapphire Polishing Technology that substitution passes, before having good application Scape.
Table 2
Upper example is only presently preferred embodiments of the present invention, and every any modifications and changes made according to this patent, should all wrap It is contained in protection scope of the present invention.

Claims (6)

  1. A kind of 1. sapphire wafer polishing method for the mild abrasives fixation grinding tool for including neodymium compound, it is characterised in that：It is described to grind Mill method comprises the following steps：
    1) preparation of neodymium compound mild abrasives fixation grinding tool raw material is included：Nano silicon dioxide 40%~60%, binding agent 20% ~40%, curing agent 10%~15%, neodymium compound 5%~10%, remaining be deionized water；
    2) making of neodymium compound mild abrasives fixation grinding tool is included：Curing agent is added in deionized water, and is stirred to dissolve, Bonding agent, nano silicon dioxide, neodymium compound are then added, is stirred for uniformly；The dispensing configured is hot pressed into a mold Shape, completes heat cure after the demoulding, and its upper and lower end face is repaired, and ensures the flatness and the depth of parallelism of grinding tool upper and lower end face；
    3) polishing of the neodymium compound mild abrasives fixation grinding tool to sapphire wafer is included：The mild abrasives for including neodymium compound are fixed Grinding tool is installed on the upper disk of polishing machine, and sapphire wafer to be processed is placed on the rotating polishing machine lower wall of meeting, is fixed with fixture Firmly, start polishing machine, and water base coolant is injected between upper lower burrs；Include the neodymium on the mild abrasives fixation grinding tool of neodymium compound Compound and silica abrasive grain scratch sapphire face and solid phase reaction occur, and realize the polishing to sapphire wafer.
  2. 2. the sapphire wafer polishing method of the mild abrasives fixation grinding tool as claimed in claim 1 for including neodymium compound, it is special Sign is：In the step 3), under the action of pressure and relative velocity, neodymium compound is both a kind of catalyst, reduces indigo plant Jewel chip and the energy needed for silicon dioxde reaction, while solid phase can occur with abrasive material and sapphire material again as reactant Reaction, generates one layer of reaction product layer that is soft, easily removing, and using subsequent abrasive and generates the friction work between nitride layer Removed with by generation nitride layer, so as to fulfill the polishing of sapphire wafer.
  3. 3. the sapphire wafer polishing method of the mild abrasives fixation grinding tool containing neodymium compound as claimed in claim 1 or 2, it is special Sign is：The bonding agent is magnesia.
  4. 4. the sapphire wafer polishing method of the mild abrasives fixation grinding tool containing neodymium compound as claimed in claim 1 or 2, it is special Sign is：The curing agent is magnesium chloride, phenolic aldehyde-acetal resin or phenolic aldehyde-epoxy resin.
  5. 5. the sapphire wafer polishing method of the mild abrasives fixation grinding tool containing neodymium compound as claimed in claim 1 or 2, it is special Sign is：The granularity of the nano silicon dioxide is 80~100nm.
  6. 6. the sapphire wafer polishing method of the mild abrasives fixation grinding tool containing neodymium compound as claimed in claim 1 or 2, it is special Sign is：The neodymium compound is neodymium nitrate, neodymium chloride, neodymia or neodymium fluoride.
CN201711220952.4A 2017-11-29 2017-11-29 It is a kind of based on the sapphire wafer polishing method for including neodymium compound mild abrasives fixation grinding tool Pending CN107953148A (en)

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110052917A (en) * 2019-04-27 2019-07-26 安徽工程大学 A kind of sapphire polishing processing method based on concretion abrasive technology
CN111805780A (en) * 2020-06-19 2020-10-23 郑州磨料磨具磨削研究所有限公司 Method and system for precisely machining curved surface of single crystal diamond
CN112936070A (en) * 2021-03-05 2021-06-11 南京航空航天大学 Fixed abrasive polishing pad and deliquescent crystal lanthanum bromide dry-type polishing method
CN112959233A (en) * 2021-03-05 2021-06-15 南京航空航天大学 Fixed abrasive polishing pad and deliquescent KDP crystal dry-type polishing method

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5489318A (en) * 1992-12-14 1996-02-06 Minnesota Mining And Manufacturing Company Abrasive grain comprising calcium oxide and/or strontium oxide
JP2003027045A (en) * 2000-12-25 2003-01-29 Nissan Chem Ind Ltd Cerium oxide sol and abrasive
CN102343547A (en) * 2011-10-20 2012-02-08 天津理工大学 Thermochemistry mechanical polishing method of sapphire substrate material and polishing solution
CN102513919A (en) * 2011-12-12 2012-06-27 江苏智邦精工科技有限公司 Method for grinding aluminum oxide ceramic ball based on soft grinding material fixation grinding tool
CN102513918A (en) * 2011-12-12 2012-06-27 江苏智邦精工科技有限公司 Silicon nitride ceramic ball grinding method based on flexible grinding material fixing grinding tool

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5489318A (en) * 1992-12-14 1996-02-06 Minnesota Mining And Manufacturing Company Abrasive grain comprising calcium oxide and/or strontium oxide
JP2003027045A (en) * 2000-12-25 2003-01-29 Nissan Chem Ind Ltd Cerium oxide sol and abrasive
CN102343547A (en) * 2011-10-20 2012-02-08 天津理工大学 Thermochemistry mechanical polishing method of sapphire substrate material and polishing solution
CN102513919A (en) * 2011-12-12 2012-06-27 江苏智邦精工科技有限公司 Method for grinding aluminum oxide ceramic ball based on soft grinding material fixation grinding tool
CN102513918A (en) * 2011-12-12 2012-06-27 江苏智邦精工科技有限公司 Silicon nitride ceramic ball grinding method based on flexible grinding material fixing grinding tool

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110052917A (en) * 2019-04-27 2019-07-26 安徽工程大学 A kind of sapphire polishing processing method based on concretion abrasive technology
CN111805780A (en) * 2020-06-19 2020-10-23 郑州磨料磨具磨削研究所有限公司 Method and system for precisely machining curved surface of single crystal diamond
CN111805780B (en) * 2020-06-19 2022-03-22 郑州磨料磨具磨削研究所有限公司 Method and system for precisely machining curved surface of single crystal diamond
CN112936070A (en) * 2021-03-05 2021-06-11 南京航空航天大学 Fixed abrasive polishing pad and deliquescent crystal lanthanum bromide dry-type polishing method
CN112959233A (en) * 2021-03-05 2021-06-15 南京航空航天大学 Fixed abrasive polishing pad and deliquescent KDP crystal dry-type polishing method
CN112936070B (en) * 2021-03-05 2022-09-06 南京航空航天大学 Fixed abrasive polishing pad and deliquescent crystal lanthanum bromide dry-type polishing method

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Application publication date: 20180424