CN110491978B - 用于巨量转移的led芯片结构及其制备方法 - Google Patents

用于巨量转移的led芯片结构及其制备方法 Download PDF

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CN110491978B
CN110491978B CN201910886342.0A CN201910886342A CN110491978B CN 110491978 B CN110491978 B CN 110491978B CN 201910886342 A CN201910886342 A CN 201910886342A CN 110491978 B CN110491978 B CN 110491978B
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led chip
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李成明
许水珍
倪绿军
陈建
杨功寿
王�琦
张国义
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Dongguan Institute of Opto Electronics Peking University
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Abstract

本发明涉及半导体技术领域，具体涉及一种LED芯片结构及其制备方法、应用LED芯片结构的巨量转移方法，本发明的LED芯片结构包括衬底和发光单元，发光单元与衬底连接，还包括钝化层和欧姆接触层，发光单元与衬底连接处设有金属层，钝化层围设于发光单元四周、且钝化层与金属层连接，欧姆接触层包设于钝化层、且欧姆接触层与发光单元连接，本发明提供的LED芯片结构，设计合理，在巨量转移过程中，无需识别LED芯片的电极，减小对位难度，方便转移；本发明的制备方法，工艺简单，制备容易，且制得的LED芯片结构紧凑合理，便于进行巨量转移；本发明提供的应用LED芯片结构的巨量转移方法，步骤操作简单，对位容易，巨量转移方便。

Description

用于巨量转移的LED芯片结构及其制备方法
技术领域
本发明涉及半导体技术领域，特别是涉及一种LED芯片结构及其制备方法、应用LED芯片结构的巨量转移方法。
背景技术
发光二极管(Light Emitting Diode，LED)以其体积小、功率低、使用寿命长、高亮度以及主动发光等优点，而被广泛应用于照明及显示等技术领域。微型LED，又称微LED、mLED或μLED，是一种新型的平面显示技术，微型LED显示器具备单独像素元件的LED阵列，与目前广泛应用的液晶显示器相比，微型LED显示器具备更好的对比度，更快的响应速度，以及更低的能耗。
由于微型LED是以芯片的形式单独被制造出来，因此，在制作显示器件的过程中，需要将巨量的微型LED芯片转移到基板上。目前，微型LED芯片的巨量转移方式主要包括单颗取放转移、流体组装、液体表面自组装、静电自组装、激光转印以及滚轮转印等，鉴于微型LED芯片的尺寸比较小，装过程中实现转移已经不易，再考虑到微型LED芯片电极对位的问题，大大增加了巨量转移的难度。
发明内容
为解决上述问题，本发明提供一种LED芯片结构及其制备方法、应用LED芯片结构的巨量转移方法，本发明提供的LED芯片结构，设计合理，方便转移；本发明的制备方法，工艺简单，制备容易，且制得的LED芯片结构紧凑合理；本发明提供的应用LED芯片结构的巨量转移方法，步骤操作简单，对位容易，转移方便。
本发明采用的技术方案是：一种LED芯片结构，包括衬底和发光单元，发光单元与衬底连接，还包括钝化层和欧姆接触层，发光单元与衬底连接处设有金属层，钝化层围设于发光单元四周、且钝化层与金属层连接，欧姆接触层包设于钝化层、且欧姆接触层与发光单元连接。
对上述技术方案的进一步改进为，发光单元包括依次设置的LED外延层、键合层和缓冲层，LED外延层与金属层连接。
对上述技术方案的进一步改进为，衬底由可刻蚀材料制成。
对上述技术方案的进一步改进为，衬底由硅制成。
对上述技术方案的进一步改进为，键合层由NiAu制成，键合层最外层设有Au层。
上述LED芯片结构的制备方法，包括以下步骤：
步骤一：制备外延结构；
步骤二：在外延结构上设置键合层，制成带有键合层的外延材料；
步骤三：将步骤二中的外延材料转移到目标衬底，让外延材料和目标衬底进行键合，形成键合材料；
步骤四：对步骤三中键合材料进行蚀刻处理，从键合材料设有键合层一侧蚀刻至衬底，形成LED芯片结构。
对上述技术方案的进一步改进为，外延结构包括有依次设置的蓝宝石衬底、缓冲层和LED外延层。
对上述技术方案的进一步改进为，步骤三中外延材料和目标衬底键合后，将蓝宝石衬底移除。
一种应用上述LED芯片结构的巨量转移方法，将LED芯片结构植入模板，并移除衬底，然后将LED芯片转移至目标基板中，固晶。
对上述技术方案的进一步改进为，模板靠近LED芯片结构处设有蜡层，目标基板设有用于限定LED芯片结构位置的限位结构，巨量转移时，首先将植入模板的LED芯片浸入液体，同时目标基板也置于液体中，通过液体的浮力，将目标基板推送到LED芯片下方，当LED芯片完全卡入目标基板的限位结构后，将卡有LED芯片的目标基板移出液面，此时通过微热融化部分蜡层，将模板移除，然后将LED芯片与目标基板固晶，固晶后，完全熔融蜡层，去除蜡层后完成LED芯片结构巨量转移。
本发明的有益效果如下：
1、本发明的LED芯片结构包括衬底和发光单元，发光单元与衬底连接，还包括钝化层和欧姆接触层，发光单元与衬底连接处设有金属层，钝化层围设于发光单元四周、且钝化层与金属层连接，欧姆接触层包设于钝化层、且欧姆接触层与发光单元连接，本发明提供的LED芯片结构，设计合理，欧姆接触层包设于外侧，在巨量转移过程中无需识别LED芯片的电极，可减小对位难度，方便转移。
2、本发明的制备方法，工艺简单，通过材料键合和蚀刻等工艺，完成LED芯片的加工，制备方便，且制得的LED芯片结构紧凑合理，使用效果好。
3、本发明的应用LED芯片结构的巨量转移方法，在转移的过程中，将待转移结构浸入液体，通过浮力并配合限位结构，完成巨量转移，其能够避免芯片巨量转移存在的单个芯片对准问题，同时避免巨量转移所带来的单颗芯片位置偏差移动等问题，转移方便。
附图说明
图1为本发明的LED芯片结构示意图；
图2为本发明的外延结构示意图；
图3为本发明的外延材料的结构示意图；
图4为本发明的键合材料的结构示意图；
图5为图4移除蓝宝石衬底后的结构示意图；
图6为图5植入模板后的结构示意图；
图7为图6移除目标衬底后的结构示意图；
图8为图7转移至目标基板后的结构示意图；
图9为图8移除模板后的结构示意图；
图10为图9移除蜡层后的结构示意图；
附图标记说明：1.目标衬底、2.发光单元、3.LED外延层、4.键合层、5.金属层、6.钝化层、7.欧姆接触层、8.外延结构、9.模板、10.目标基板、11.蜡层、12.限位结构、13.蓝宝石衬底、14.缓冲层。
具体实施方式
下面将结合附图对本发明作进一步的说明。
如图1～图10所示，本实施例所述的LED芯片结构，包括衬底和发光单元2，发光单元2与衬底连接，还包括钝化层6和欧姆接触层7，发光单元2与衬底连接处设有金属层5，钝化层6围设于发光单元2四周、且钝化层6与金属层5连接，欧姆接触层7包设于钝化层6、且欧姆接触层7与发光单元2连接，本发明提供的LED芯片结构，设计合理，欧姆接触层7包设于外侧，在巨量转移过程中无需识别LED芯片的电极，可减小对位难度，方便转移。
发光单元2包括依次设置的LED外延层3、键合层4和缓冲层14，LED外延层3与金属层5连接，具体地，本发明的缓冲层14为氮化镓缓冲层14及参杂层，本发明这样的设置，便于发光单元2与外部基板的电路接通，同时本发明的缓冲层14的设置，可使晶体结构相同或相近、晶格常数失配度小、结晶性能好、缺陷密度小。
衬底由可刻蚀材料制成，这样的设置，主要是便于芯片制备过程中的蚀刻加工，降低加工制备难度，更具体地，衬底可以直接采用硅材料制作，硅选用现有技术中的单晶硅即可。
键合层4由NiAu制成，这样的设置主要是为了更好的键合，有效避免GaN与Si直接键合时存在较大的晶格失配和热膨胀失配，使得GaN难以直接键合于Si材料，键合层4最外层设有Au层，Au层的设置，主要用于LED芯片导电，导电效果好，便于使用。
上述LED芯片结构的制备方法，包括以下步骤：
步骤一：制备外延结构8；
步骤二：在外延结构8上设置键合层4，制成带有键合层4的外延材料；
步骤三：将步骤二中的外延材料转移到目标衬底1，让外延材料和目标衬底1进行键合，形成键合材料；
步骤四：对步骤三中键合材料进行蚀刻处理，从键合材料设有键合层4一侧蚀刻至衬底，形成LED芯片结构。
外延结构8包括有依次设置的蓝宝石衬底13、缓冲层14和LED外延层3。
步骤三中外延材料和目标衬底1键合后，将蓝宝石衬底13移除。
本发明的制备方法，工艺简单，通过材料键合和蚀刻等工艺，完成LED芯片的加工，制备方便，且制得的LED芯片结构紧凑合理，使用效果好。
应用上述LED芯片结构的巨量转移方法，将LED芯片结构植入模板9，并移除衬底，此处是通过酸性溶液浸蚀进行衬底的移除，如盐酸溶液，然后将LED芯片转移至目标基板10中，固晶，模板9靠近LED芯片结构处设有蜡层11，目标基板10设有用于限定LED芯片结构位置的限位结构12，巨量转移时，首先将植入模板9的LED芯片浸入液体，同时目标基板10也置于液体中，通过液体的浮力，将目标基板10推送到LED芯片下方，当LED芯片完全卡入目标基板10的限位结构12后，此处，在卡入过程中，需要选用光刻、二次光刻或套刻工艺中常用的定位方法，进行定位，增加转移的精准性，卡好后，将卡有LED芯片的目标基板10移出液面，此时通过微热融化部分蜡层11，将模板9移除，然后将LED芯片与目标基板10固晶，固晶后，完全熔融蜡层11，去除蜡层11后完成LED芯片结构巨量转移，此处用于给目标基板10和LED芯片提供浮力的液体是一些密度比较小的有机溶剂，如乙醇、丙酮等，也可以选用无机溶剂，如水，只是在完成巨量转移后，需要进行干燥步骤，如选用有机溶剂，芯片表面的液体会挥发，无需干燥，本发明的巨量转移方法是通过刻蚀工艺进行LED芯片的巨量转移，在LED芯片巨量转移的过程中，通过设置模板9，先对LED芯片进行位置限定，但模板9与LED芯片连接处又预设有蜡层11，可在完成巨量转移后，非常容易的将蜡层11加热熔融，蜡层11部分熔融的时候，模板9松动，可直接移除，在后续加工完成后，可以将蜡层11完全熔融去除，但在加工过程中，无需全部去除，蜡层11可起到保护LED芯片的作用，本发明的巨量转移方法，在转移的过程中，将待转移结构浸入液体，通过浮力并配合限位结构12，完成巨量转移，其能够避免LED芯片巨量转移存在的单个LED芯片对准问题，同时避免巨量转移所带来的单颗LED芯片位置偏差移动等问题，转移方便。
以上所述实施例仅表达了本发明的几种实施方式，其描述较为具体和详细，但并不能因此而理解为对本发明专利范围的限制。应当指出的是，对于本领域的普通技术人员来说，在不脱离本发明构思的前提下，还可以做出若干变形和改进，这些都属于本发明的保护范围。因此，本发明专利的保护范围应以所附权利要求为准。

Claims (6)

1.一种用于巨量转移的LED芯片结构，包括衬底和发光单元，发光单元与衬底连接，其特征在于，还包括钝化层和欧姆接触层，发光单元与衬底连接处设有金属层，钝化层围设于发光单元四周、且钝化层与金属层连接，欧姆接触层包设于钝化层、且欧姆接触层与发光单元连接；发光单元包括依次设置的LED外延层、键合层和缓冲层，LED外延层与金属层连接；
键合层由NiAu制成，键合层最外层设有Au层；
巨量转移时：模板靠近LED芯片结构处设有蜡层，目标基板设有用于限定LED芯片结构位置的限位结构，巨量转移时，首先将植入模板的LED芯片浸入液体，同时目标基板也置于液体中，通过液体的浮力，将目标基板推送到LED芯片下方，当LED芯片完全卡入目标基板的限位结构后，将卡有LED芯片的目标基板移出液面，此时通过微热融化部分蜡层，将模板移除，然后将LED芯片与目标基板固晶，固晶后，完全熔融蜡层，去除蜡层后完成LED芯片结构巨量转移。
2.根据权利要求1所述的用于巨量转移的LED芯片结构，其特征在于，衬底由可刻蚀材料制成。
3.根据权利要求1所述的用于巨量转移的LED芯片结构，其特征在于，衬底由硅制成。
4.一种权利要求1-3任一项所述的用于巨量转移的LED芯片结构的制备方法，其特征在于，包括以下步骤：
步骤一：制备外延结构；
步骤二：在外延结构上设置键合层，制成带有键合层的外延材料；
步骤三：将步骤二中的外延材料转移到目标衬底，让外延材料和目标衬底进行键合，形成键合材料；
步骤四：对步骤三中键合材料进行蚀刻处理，从键合材料设有键合层一侧蚀刻至衬底，形成LED芯片结构；
巨量转移时：模板靠近LED芯片结构处设有蜡层，目标基板设有用于限定LED芯片结构位置的限位结构，巨量转移时，首先将植入模板的LED芯片浸入液体，同时目标基板也置于液体中，通过液体的浮力，将目标基板推送到LED芯片下方，当LED芯片完全卡入目标基板的限位结构后，将卡有LED芯片的目标基板移出液面，此时通过微热融化部分蜡层，将模板移除，然后将LED芯片与目标基板固晶，固晶后，完全熔融蜡层，去除蜡层后完成LED芯片结构巨量转移。
5.根据权利要求4所述的制备方法，其特征在于，外延结构包括有依次设置的蓝宝石衬底、缓冲层和LED外延层。
6.根据权利要求4所述的制备方法，其特征在于，步骤三中外延材料和目标衬底键合后，将蓝宝石衬底移除。
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