CN110491978B - 用于巨量转移的led芯片结构及其制备方法 - Google Patents
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Abstract
本发明涉及半导体技术领域,具体涉及一种LED芯片结构及其制备方法、应用LED芯片结构的巨量转移方法,本发明的LED芯片结构包括衬底和发光单元,发光单元与衬底连接,还包括钝化层和欧姆接触层,发光单元与衬底连接处设有金属层,钝化层围设于发光单元四周、且钝化层与金属层连接,欧姆接触层包设于钝化层、且欧姆接触层与发光单元连接,本发明提供的LED芯片结构,设计合理,在巨量转移过程中,无需识别LED芯片的电极,减小对位难度,方便转移;本发明的制备方法,工艺简单,制备容易,且制得的LED芯片结构紧凑合理,便于进行巨量转移;本发明提供的应用LED芯片结构的巨量转移方法,步骤操作简单,对位容易,巨量转移方便。
Description
技术领域
本发明涉及半导体技术领域,特别是涉及一种LED芯片结构及其制备方法、应用LED芯片结构的巨量转移方法。
背景技术
发光二极管(Light Emitting Diode,LED)以其体积小、功率低、使用寿命长、高亮度以及主动发光等优点,而被广泛应用于照明及显示等技术领域。微型LED,又称微LED、mLED或μLED,是一种新型的平面显示技术,微型LED显示器具备单独像素元件的LED阵列,与目前广泛应用的液晶显示器相比,微型LED显示器具备更好的对比度,更快的响应速度,以及更低的能耗。
由于微型LED是以芯片的形式单独被制造出来,因此,在制作显示器件的过程中,需要将巨量的微型LED芯片转移到基板上。目前,微型LED芯片的巨量转移方式主要包括单颗取放转移、流体组装、液体表面自组装、静电自组装、激光转印以及滚轮转印等,鉴于微型LED芯片的尺寸比较小,装过程中实现转移已经不易,再考虑到微型LED芯片电极对位的问题,大大增加了巨量转移的难度。
发明内容
为解决上述问题,本发明提供一种LED芯片结构及其制备方法、应用LED芯片结构的巨量转移方法,本发明提供的LED芯片结构,设计合理,方便转移;本发明的制备方法,工艺简单,制备容易,且制得的LED芯片结构紧凑合理;本发明提供的应用LED芯片结构的巨量转移方法,步骤操作简单,对位容易,转移方便。
本发明采用的技术方案是:一种LED芯片结构,包括衬底和发光单元,发光单元与衬底连接,还包括钝化层和欧姆接触层,发光单元与衬底连接处设有金属层,钝化层围设于发光单元四周、且钝化层与金属层连接,欧姆接触层包设于钝化层、且欧姆接触层与发光单元连接。
对上述技术方案的进一步改进为,发光单元包括依次设置的LED外延层、键合层和缓冲层,LED外延层与金属层连接。
对上述技术方案的进一步改进为,衬底由可刻蚀材料制成。
对上述技术方案的进一步改进为,衬底由硅制成。
对上述技术方案的进一步改进为,键合层由NiAu制成,键合层最外层设有Au层。
上述LED芯片结构的制备方法,包括以下步骤:
步骤一:制备外延结构;
步骤二:在外延结构上设置键合层,制成带有键合层的外延材料;
步骤三:将步骤二中的外延材料转移到目标衬底,让外延材料和目标衬底进行键合,形成键合材料;
步骤四:对步骤三中键合材料进行蚀刻处理,从键合材料设有键合层一侧蚀刻至衬底,形成LED芯片结构。
对上述技术方案的进一步改进为,外延结构包括有依次设置的蓝宝石衬底、缓冲层和LED外延层。
对上述技术方案的进一步改进为,步骤三中外延材料和目标衬底键合后,将蓝宝石衬底移除。
一种应用上述LED芯片结构的巨量转移方法,将LED芯片结构植入模板,并移除衬底,然后将LED芯片转移至目标基板中,固晶。
对上述技术方案的进一步改进为,模板靠近LED芯片结构处设有蜡层,目标基板设有用于限定LED芯片结构位置的限位结构,巨量转移时,首先将植入模板的LED芯片浸入液体,同时目标基板也置于液体中,通过液体的浮力,将目标基板推送到LED芯片下方,当LED芯片完全卡入目标基板的限位结构后,将卡有LED芯片的目标基板移出液面,此时通过微热融化部分蜡层,将模板移除,然后将LED芯片与目标基板固晶,固晶后,完全熔融蜡层,去除蜡层后完成LED芯片结构巨量转移。
本发明的有益效果如下:
1、本发明的LED芯片结构包括衬底和发光单元,发光单元与衬底连接,还包括钝化层和欧姆接触层,发光单元与衬底连接处设有金属层,钝化层围设于发光单元四周、且钝化层与金属层连接,欧姆接触层包设于钝化层、且欧姆接触层与发光单元连接,本发明提供的LED芯片结构,设计合理,欧姆接触层包设于外侧,在巨量转移过程中无需识别LED芯片的电极,可减小对位难度,方便转移。
2、本发明的制备方法,工艺简单,通过材料键合和蚀刻等工艺,完成LED芯片的加工,制备方便,且制得的LED芯片结构紧凑合理,使用效果好。
3、本发明的应用LED芯片结构的巨量转移方法,在转移的过程中,将待转移结构浸入液体,通过浮力并配合限位结构,完成巨量转移,其能够避免芯片巨量转移存在的单个芯片对准问题,同时避免巨量转移所带来的单颗芯片位置偏差移动等问题,转移方便。
附图说明
图1为本发明的LED芯片结构示意图;
图2为本发明的外延结构示意图;
图3为本发明的外延材料的结构示意图;
图4为本发明的键合材料的结构示意图;
图5为图4移除蓝宝石衬底后的结构示意图;
图6为图5植入模板后的结构示意图;
图7为图6移除目标衬底后的结构示意图;
图8为图7转移至目标基板后的结构示意图;
图9为图8移除模板后的结构示意图;
图10为图9移除蜡层后的结构示意图;
附图标记说明:1.目标衬底、2.发光单元、3.LED外延层、4.键合层、5.金属层、6.钝化层、7.欧姆接触层、8.外延结构、9.模板、10.目标基板、11.蜡层、12.限位结构、13.蓝宝石衬底、14.缓冲层。
具体实施方式
下面将结合附图对本发明作进一步的说明。
如图1~图10所示,本实施例所述的LED芯片结构,包括衬底和发光单元2,发光单元2与衬底连接,还包括钝化层6和欧姆接触层7,发光单元2与衬底连接处设有金属层5,钝化层6围设于发光单元2四周、且钝化层6与金属层5连接,欧姆接触层7包设于钝化层6、且欧姆接触层7与发光单元2连接,本发明提供的LED芯片结构,设计合理,欧姆接触层7包设于外侧,在巨量转移过程中无需识别LED芯片的电极,可减小对位难度,方便转移。
发光单元2包括依次设置的LED外延层3、键合层4和缓冲层14,LED外延层3与金属层5连接,具体地,本发明的缓冲层14为氮化镓缓冲层14及参杂层,本发明这样的设置,便于发光单元2与外部基板的电路接通,同时本发明的缓冲层14的设置,可使晶体结构相同或相近、晶格常数失配度小、结晶性能好、缺陷密度小。
衬底由可刻蚀材料制成,这样的设置,主要是便于芯片制备过程中的蚀刻加工,降低加工制备难度,更具体地,衬底可以直接采用硅材料制作,硅选用现有技术中的单晶硅即可。
键合层4由NiAu制成,这样的设置主要是为了更好的键合,有效避免GaN与Si直接键合时存在较大的晶格失配和热膨胀失配,使得GaN难以直接键合于Si材料,键合层4最外层设有Au层,Au层的设置,主要用于LED芯片导电,导电效果好,便于使用。
上述LED芯片结构的制备方法,包括以下步骤:
步骤一:制备外延结构8;
步骤二:在外延结构8上设置键合层4,制成带有键合层4的外延材料;
步骤三:将步骤二中的外延材料转移到目标衬底1,让外延材料和目标衬底1进行键合,形成键合材料;
步骤四:对步骤三中键合材料进行蚀刻处理,从键合材料设有键合层4一侧蚀刻至衬底,形成LED芯片结构。
外延结构8包括有依次设置的蓝宝石衬底13、缓冲层14和LED外延层3。
步骤三中外延材料和目标衬底1键合后,将蓝宝石衬底13移除。
本发明的制备方法,工艺简单,通过材料键合和蚀刻等工艺,完成LED芯片的加工,制备方便,且制得的LED芯片结构紧凑合理,使用效果好。
应用上述LED芯片结构的巨量转移方法,将LED芯片结构植入模板9,并移除衬底,此处是通过酸性溶液浸蚀进行衬底的移除,如盐酸溶液,然后将LED芯片转移至目标基板10中,固晶,模板9靠近LED芯片结构处设有蜡层11,目标基板10设有用于限定LED芯片结构位置的限位结构12,巨量转移时,首先将植入模板9的LED芯片浸入液体,同时目标基板10也置于液体中,通过液体的浮力,将目标基板10推送到LED芯片下方,当LED芯片完全卡入目标基板10的限位结构12后,此处,在卡入过程中,需要选用光刻、二次光刻或套刻工艺中常用的定位方法,进行定位,增加转移的精准性,卡好后,将卡有LED芯片的目标基板10移出液面,此时通过微热融化部分蜡层11,将模板9移除,然后将LED芯片与目标基板10固晶,固晶后,完全熔融蜡层11,去除蜡层11后完成LED芯片结构巨量转移,此处用于给目标基板10和LED芯片提供浮力的液体是一些密度比较小的有机溶剂,如乙醇、丙酮等,也可以选用无机溶剂,如水,只是在完成巨量转移后,需要进行干燥步骤,如选用有机溶剂,芯片表面的液体会挥发,无需干燥,本发明的巨量转移方法是通过刻蚀工艺进行LED芯片的巨量转移,在LED芯片巨量转移的过程中,通过设置模板9,先对LED芯片进行位置限定,但模板9与LED芯片连接处又预设有蜡层11,可在完成巨量转移后,非常容易的将蜡层11加热熔融,蜡层11部分熔融的时候,模板9松动,可直接移除,在后续加工完成后,可以将蜡层11完全熔融去除,但在加工过程中,无需全部去除,蜡层11可起到保护LED芯片的作用,本发明的巨量转移方法,在转移的过程中,将待转移结构浸入液体,通过浮力并配合限位结构12,完成巨量转移,其能够避免LED芯片巨量转移存在的单个LED芯片对准问题,同时避免巨量转移所带来的单颗LED芯片位置偏差移动等问题,转移方便。
以上所述实施例仅表达了本发明的几种实施方式,其描述较为具体和详细,但并不能因此而理解为对本发明专利范围的限制。应当指出的是,对于本领域的普通技术人员来说,在不脱离本发明构思的前提下,还可以做出若干变形和改进,这些都属于本发明的保护范围。因此,本发明专利的保护范围应以所附权利要求为准。
Claims (6)
1.一种用于巨量转移的LED芯片结构,包括衬底和发光单元,发光单元与衬底连接,其特征在于,还包括钝化层和欧姆接触层,发光单元与衬底连接处设有金属层,钝化层围设于发光单元四周、且钝化层与金属层连接,欧姆接触层包设于钝化层、且欧姆接触层与发光单元连接;发光单元包括依次设置的LED外延层、键合层和缓冲层,LED外延层与金属层连接;
键合层由NiAu制成,键合层最外层设有Au层;
巨量转移时:模板靠近LED芯片结构处设有蜡层,目标基板设有用于限定LED芯片结构位置的限位结构,巨量转移时,首先将植入模板的LED芯片浸入液体,同时目标基板也置于液体中,通过液体的浮力,将目标基板推送到LED芯片下方,当LED芯片完全卡入目标基板的限位结构后,将卡有LED芯片的目标基板移出液面,此时通过微热融化部分蜡层,将模板移除,然后将LED芯片与目标基板固晶,固晶后,完全熔融蜡层,去除蜡层后完成LED芯片结构巨量转移。
2.根据权利要求1所述的用于巨量转移的LED芯片结构,其特征在于,衬底由可刻蚀材料制成。
3.根据权利要求1所述的用于巨量转移的LED芯片结构,其特征在于,衬底由硅制成。
4.一种权利要求1-3任一项所述的用于巨量转移的LED芯片结构的制备方法,其特征在于,包括以下步骤:
步骤一:制备外延结构;
步骤二:在外延结构上设置键合层,制成带有键合层的外延材料;
步骤三:将步骤二中的外延材料转移到目标衬底,让外延材料和目标衬底进行键合,形成键合材料;
步骤四:对步骤三中键合材料进行蚀刻处理,从键合材料设有键合层一侧蚀刻至衬底,形成LED芯片结构;
巨量转移时:模板靠近LED芯片结构处设有蜡层,目标基板设有用于限定LED芯片结构位置的限位结构,巨量转移时,首先将植入模板的LED芯片浸入液体,同时目标基板也置于液体中,通过液体的浮力,将目标基板推送到LED芯片下方,当LED芯片完全卡入目标基板的限位结构后,将卡有LED芯片的目标基板移出液面,此时通过微热融化部分蜡层,将模板移除,然后将LED芯片与目标基板固晶,固晶后,完全熔融蜡层,去除蜡层后完成LED芯片结构巨量转移。
5.根据权利要求4所述的制备方法,其特征在于,外延结构包括有依次设置的蓝宝石衬底、缓冲层和LED外延层。
6.根据权利要求4所述的制备方法,其特征在于,步骤三中外延材料和目标衬底键合后,将蓝宝石衬底移除。
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