CN109661163A - 一种温控粘附式Micro-LED巨量转移方法 - Google Patents

一种温控粘附式Micro-LED巨量转移方法 Download PDF

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CN109661163A
CN109661163A CN201811564858.5A CN201811564858A CN109661163A CN 109661163 A CN109661163 A CN 109661163A CN 201811564858 A CN201811564858 A CN 201811564858A CN 109661163 A CN109661163 A CN 109661163A
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micro
water
temperature control
base substrate
transfer base
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CN109661163B (zh
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陈云
施达创
陈新
刘强
高健
汪正平
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Maiwei Technology Zhuhai Co ltd
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Guangdong University of Technology
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Priority to PCT/CN2019/113339 priority patent/WO2020125201A1/zh
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Abstract

一种温控粘附式Micro‑LED巨量转移方法，包括如下步骤：A、设置自装结构，晶片一面加工有正极引脚和负极引脚，另一面加工有自组装微结构，转移基板加工有自承接微结构，自组装微结构和自承接微结构相互装配，自承接微结构表面涂覆有温控粘附层；B、开始自装工作，使用容器盛水，将晶片分散到水中，转移基板浸泡在水中，通过加热装置使水温度升高，同时使用搅拌器搅拌水；C、开始转移工作，停止对水的加热和搅拌，取出转移基板，将目标衬底浸泡在高温的水中，再将转移基板放入高温水与目标衬底对齐，降低水的温度，使Micro‑LED晶片脱离转移基板，落到目标衬底上；该方法采用物理原理进行转移，不会影响到晶片本身。

Description

一种温控粘附式Micro-LED巨量转移方法
技术领域
本发明涉及领域半导体光电技术领域，特别是一种温控粘附式Micro-LED巨量转移方法。
背景技术
LED(发光二极管)是一种能发光的半导体电子元件，具有能量转换效率高，反应时间短，使用寿命长等优点；Micro-LED(微发光二极管)是将传统的LED结构进行薄膜化、微小化、阵列化所得，尺寸仅在1-10μm。由于LED显示技术的优点，Micro-LED越来越多地被用到显示的场合，如：微型投影(虚拟现实设备)、小屏显示(智能可穿戴设备)、中大屏显示(电视)、超大屏显示(户外显示屏)等。但是，超高分辨率的Micro-LED显示屏制造工艺难题仍制约着Micro-LED应用到上述用途。相比OLED(有机发光二极管)可以采用印刷等廉价的生产方法轻易制造出大面积的发光面，制成一块大尺寸、高分辨率的Micro-LED显示屏需要对百万或千万片微米级尺寸的Micro-LED晶片排列组装(巨量转移)，因此带来巨大的制造成本消耗。巨量转移要求把微米级大小的Micro-LED晶片从施主晶圆上精准抓取，扩大阵列距离，妥善安放固定到目标衬底(如显示器背板)上，以现有的主流LED固晶速度，往往需要花费数十天时间对一块电视屏幕进行贴装，远远不能满足产业化的要求，因此，亟需提出新方法来提高抓取速度、抓取精度，扩大晶片阵列距离，准确安放晶片，以加快Micro-LED显示技术的产业化步伐。
针对从施主晶圆上剥离晶片、拾取晶片并转移贴装到目标衬底(如显示器背板)这一工艺过程，目前主流方案为磁力拾取。在Micro-LED晶片表面加工有异名磁极，转运基板上加工有对应的异名磁极。使用该转运基板拾取Micro-LED晶片，实现了Micro-LED晶片贴装方向(正负极)的控制。该方案可通过控制励磁电流实现拾取晶片动作和释放晶片动作，较为灵活。但是电磁场可能会对某些特定用途的Micro-LED晶片损伤，影响显示质量。
因此，亟需提出一种新方法，只需对Micro-LED晶片进行简单表面修饰，即可在流体环境中实现自组装；自组装过程中，同时完成晶片的有序拾取。
发明内容
针对上述缺陷，本发明的目的在于提出一种温控粘附式Micro-LED巨量转移方法，该方法采用物理原理进行转移，不会影响到晶片本身，并且方法中的耗材能重复使用。
为达此目的，本发明采用以下技术方案：
一种温控粘附式Micro-LED巨量转移方法，包括如下步骤：
A、设置自装结构，Micro-LED晶片一面加工有正极引脚和负极引脚，另一面加工有自组装微结构，转移基板加工有自承接微结构，自组装微结构和自承接微结构相互装配，自承接微结构表面涂覆有温控粘附层；温控粘附层在高于40℃的情况下具有粘性，在低于25℃的情况下粘性消失，且实现多次粘性可逆转化。
B、开始自装工作，使用容器盛水，将Micro-LED晶片分散到水中，转移基板浸泡在水中，通过加热装置使水温度升高，使得转移基板上的自承接微结构表面的温控粘附层出现粘性；同时，使用搅拌器搅拌水，使得Micro-LED晶片与自承接微结构相互装配，并在温控粘附层的作用下固定；
C、开始转移工作，停止对水的加热和搅拌，取出转移基板，将目标衬底浸泡在高温的水中，再将转移基板放入高温水与目标衬底对齐，降低水的温度，转移基板上的自承接微结构表面的温控粘附层的粘性消失，使Micro-LED晶片脱离转移基板，落到目标衬底上；
D、完成转移动作，从水中取出转移基板。
较佳地，所述Micro-LED晶片转移基板应用于几何尺寸为1～10μm的晶片。
较佳地，自组装微结构和自承接微结构均为台阶结构，两级台阶高度差为1-10μm。
较佳地，所述步骤A中温控粘附层成分为pHIPAM-CD，厚度为10-100μm。
进一步地，所述步骤B中加热后的水温度为40℃；
所述步骤C中加热后的水温为40℃，所述步骤C中降低后的液体温度为25℃。
进一步地，所述步骤D中提起转移基板的定向运动速度为1-10mm/s。
本发明的有益效果：1、本方案通过设置自组装微结构和自承接微结构，使自承接微结构和温控粘附层对Micro-LED晶片进行有序拾取晶片，在Micro-LED巨量转移工作中提高了工作效率；本方法中的转移基板可以重复使用，并且整个工作中并没有较为复杂的步骤，人工操作少，加热装置通常是加热台，将容器放置在加热台上进行加热；2、自组装微结构设置称台阶状，有一个类似插槽的结构，使用相同型号的晶片进行安装，这样就避免了正负极颠倒的问题，如果正负极颠倒则无法被吸附到自承接微结构。
附图说明
图1是本发明的一个实施例的方法步骤示意图；
图2是本发明的一个实施例的Micro-LED巨量转移方法拾取示意图；
图3是本发明的一实施例的自组装微结构和Micro-LED晶片结构放大示意图；
图4是本发明的一个实施例的Micro-LED巨量转移方法-释放示意图。
其中：容器102、水103、转移基板104、Micro-LED晶片106、自组装微结构107、正极引脚201、负极引脚202、温控粘附层204、目标衬底304、加热台305。
具体实施方式
下面结合附图并通过具体实施方式来进一步说明本发明的技术方案。
如图1-4所示，一种温控粘附式Micro-LED巨量转移方法，包括如下步骤：
A、设置自装结构，Micro-LED晶片106一面加工有正极引脚201和负极引脚202，另一面加工有自组装微结构，转移基板104加工有自承接微结构107，自组装微结构和自承接微结构相互装配，自承接微结构表面涂覆有温控粘附层204；温控粘附层204在高于40℃的情况下具有粘性，在低于25℃的情况下粘性消失，且实现多次粘性可逆转化。
B、开始自装工作，使用容器102盛水，将Micro-LED晶片分散到水103中，转移基板104浸泡在水中，通过加热装置使水温度升高，使得转移基板104上的自承接微结构107表面的温控粘附层204出现粘性；同时，使用搅拌器搅拌水，使得Micro-LED晶片106与自承接微结构107相互装配，并在温控粘附层204的粘性作用下固定；
C、开始转移工作，停止对水的加热和搅拌，取出转移基板104，将目标衬底304浸泡在高温的水中，再将转移基板104放入高温水与目标衬底304对齐，降低水的温度，转移基板104上的自承接微结构107表面的温控粘附层204的粘性消失，使Micro-LED晶片106脱离转移基板104，落到目标衬底304上；
D、完成转移动作，从水中取出转移基板104。
本方案通过设置自组装微结构和自承接微结构107，使自承接微结构107和温控粘附层204对Micro-LED晶片进106行有序拾取晶片，在Micro-LED巨量转移工作中提高了工作效率；本方法中的转移基板104可以重复使用，并且整个工作中并没有较为复杂的步骤，人工操作少，加热装置通常是加热台305，将容器放置在加热台305上进行加热。
其中，所述Micro-LED晶片106转移基板104应用于几何尺寸为1～10μm的晶片。
该方法以转移基板104为中心，可以应用1～10μm的晶片，适用于目前所有的Micro-LED晶片。
其中，自组装微结构和自承接微结构107均为台阶结构，两级台阶高度差为1-10μm。
自组装微结构设置称台阶状，有一个类似插槽的结构，使用相同型号的晶片进行安装，这样就避免了正负极颠倒的问题，如果正负极颠倒则无法被吸附到自承接微结构107。
此外，所述步骤A中温控粘附层204成分为pHIPAM-CD，厚度为10-100μm。
pHIPAM-CD是一种现有的吸附材料，不同温度下其具有不同的粘性，也会根据温度不同处于有粘性状态和失去粘性的状态。
此外，所述步骤B中加热后的水温度为40℃；
所述步骤C中加热后的水温为40℃，所述步骤C中降低后的液体温度为25℃。
其中，所述步骤D中提起转移基板104的定向运动速度为1-10mm/s。
水流的速度保证Micro-LED晶片106能可靠的与自承接微结构107相互安装，如果并不是可靠的被吸附，则会被水流带下来，重复进行吸附，直到可靠的吸附到自承接微结构上107。
以上结合具体实施例描述了本发明的技术原理。这些描述只是为了解释本发明的原理，而不能以任何方式解释为对本发明保护范围的限制。基于此处的解释，本领域的技术人员不需要付出创造性的劳动即可联想到本发明的其它具体实施方式，这些方式都将落入本发明的保护范围之内。

Claims (6)

1.一种温控粘附式Micro-LED巨量转移方法，其特征在于，包括如下步骤：
A、设置自装结构，Micro-LED晶片一面加工有正极引脚和负极引脚，另一面加工有自组装微结构，转移基板加工有自承接微结构，自组装微结构和自承接微结构相互装配，自承接微结构表面涂覆有温控粘附层；温控粘附层在高于40℃的情况下具有粘性，在低于25℃的情况下粘性消失，且实现多次粘性可逆转化；
B、开始自装工作，使用容器盛水，将Micro-LED晶片分散到水中，转移基板浸泡在水中，使得转移基板上的自承接微结构表面的温控粘附层出现粘性；同时，使用搅拌器搅拌水，使得Micro-LED晶片与自承接微结构相互装配，并在温控粘附层的作用下固定；
C、开始转移工作，停止对水的加热和搅拌，取出转移基板，将目标衬底浸泡在高温的水中，再将转移基板放入高温水与目标衬底对齐，降低水的温度，转移基板上的自承接微结构表面的温控粘附层的粘性消失，使Micro-LED晶片脱离转移基板，落到目标衬底上；
D、完成转移动作，从水中取出转移基板。
2.根据权利要求1所述的温控粘附式Micro-LED巨量转移方法，其特征在于，所述Micro-LED晶片转移基板应用于几何尺寸为1-10μm的晶片。
3.根据权利要求1所述的温控粘附式Micro-LED巨量转移方法，其特征在于，自组装微结构和自承接微结构均为台阶结构，两级台阶高度差为1-10μm。
4.根据权利要求1所述的温控粘附式Micro-LED巨量转移方法，其特征在于，所述步骤A中温控粘附层成分为pHIPAM-CD，厚度为10-100μm。
5.根据权利要求1所述的温控粘附式Micro-LED巨量转移方法，其特征在于，所述步骤B中加热后的水温度为40℃；
所述步骤C中加热后的水温为40℃，所述步骤C中降低后的液体温度为25℃。
6.根据权利要求1所述的温控粘附式Micro-LED巨量转移方法，其特征在于，所述步骤D中提起转移基板的定向运动速度为1-10mm/s。
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