CN110474541A - Power module - Google Patents
Power module Download PDFInfo
- Publication number
- CN110474541A CN110474541A CN201910760527.7A CN201910760527A CN110474541A CN 110474541 A CN110474541 A CN 110474541A CN 201910760527 A CN201910760527 A CN 201910760527A CN 110474541 A CN110474541 A CN 110474541A
- Authority
- CN
- China
- Prior art keywords
- chip
- packaging body
- power module
- integrated
- diode chip
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004806 packaging method and process Methods 0.000 claims abstract description 89
- 230000001052 transient effect Effects 0.000 claims description 24
- 229910052751 metal Inorganic materials 0.000 claims description 15
- 239000002184 metal Substances 0.000 claims description 15
- 238000005538 encapsulation Methods 0.000 claims description 13
- 230000005669 field effect Effects 0.000 claims description 13
- 238000004146 energy storage Methods 0.000 claims description 3
- 229910044991 metal oxide Inorganic materials 0.000 claims description 3
- 150000004706 metal oxides Chemical class 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 claims description 2
- 239000004020 conductor Substances 0.000 claims 1
- 230000003647 oxidation Effects 0.000 claims 1
- 238000007254 oxidation reaction Methods 0.000 claims 1
- 238000005286 illumination Methods 0.000 abstract description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 41
- 229910052802 copper Inorganic materials 0.000 description 41
- 239000010949 copper Substances 0.000 description 41
- 238000000034 method Methods 0.000 description 24
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 14
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 14
- 238000005070 sampling Methods 0.000 description 14
- 229910052709 silver Inorganic materials 0.000 description 14
- 239000004332 silver Substances 0.000 description 14
- 238000003466 welding Methods 0.000 description 14
- 230000005611 electricity Effects 0.000 description 13
- 238000005516 engineering process Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000003990 capacitor Substances 0.000 description 2
- 230000007812 deficiency Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 241000218202 Coptis Species 0.000 description 1
- 235000002991 Coptis groenlandica Nutrition 0.000 description 1
- 229910002796 Si–Al Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000011324 bead Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000007429 general method Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000001727 in vivo Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000010349 pulsation Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3114—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed the device being a chip scale package, e.g. CSP
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/003—Constructional details, e.g. physical layout, assembly, wiring or busbar connections
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/02—Conversion of ac power input into dc power output without possibility of reversal
- H02M7/04—Conversion of ac power input into dc power output without possibility of reversal by static converters
- H02M7/06—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes without control electrode or semiconductor devices without control electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
- H01L2224/49111—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting two common bonding areas, e.g. Litz or braid wires
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4912—Layout
- H01L2224/49171—Fan-out arrangements
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Rectifiers (AREA)
- Circuit Arrangement For Electric Light Sources In General (AREA)
Abstract
The invention discloses a kind of power modules comprising: AC-DC chip and rectifier diode chip.The AC-DC chip is equipped with multiple pads and is configured to execute the power module and manages and controls.Rectifier diode chip has the multiple pins connecting with the AC-DC chip, and is configured to the alternating current of input being converted into direct current.Wherein, the AC-DC chip and the rectifier diode chip are integrated in the packaging body with multiple pins, and the AC-DC chip and the rectifier diode chip are connected by related pad and pin with the relevant pins of the packaging body, to realize that power supply exports in operation.Power module of the invention can be controlled the circuits such as the illumination of driving LED light group and charger in a manner of extremely letter and improve the competitiveness of entire product so that the power module after miniaturization can be more broadly applicable in various lighting apparatus.
Description
Technical field
Present invention relates in general to field of power supplies.More particularly it relates to a kind of power module.
Background technique
LED illumination device is current widely used product, these products usually require built-in power driving plate, but due to
The space of the settable power drives plate of interiors of products is very small, and because dosage is huge, in addition the requirement to cost is high, when this
The products application of class also needs the requirement for meeting the applications such as phone charger when on phone charger.
It LED product used in illuminating product and charges the phone and alternating current must be all converted into direct current, then lead to
Alternating current, is finally converted into suitable current source or voltage source, to realize LED light by the control driving for crossing IC power management chip
Luminous lighting and charging need.As shown in Fig. 1, Fig. 2 and Fig. 3 of the application, at present mainstream LED driving have it is non-isolated, every
From or the schemes such as linear.Mature general method is using independent rectifier circuit or chip and independent IC power management core
Alternating current in power grid is converted into suitable current source or voltage source, and then LED lamp bead is driven to shine or move to mobile phone etc. by piece
Dynamic equipment charges.During energy conversion, IC power management chip, will be required by the switch of control MOSFET
Energy stores among the components such as inductor and capacitor, finally exported in a manner of constant current or constant pressure, realize LED illumination it is defeated
Out or charging exports.
With the development of integrated circuit production technology, the integrated level of IC power management chip is required higher and higher.However,
IC power management chip is due to needing ten hundreds of circuits to be integrated, so must comprising numerous logic controls and defencive function
It must be made of integrated circuit technology to produce.And rectifier bridge uses discrete diode chip for backlight unit, especially in AC high voltage
It is converted into the application of direct current, is a usually power device of the energy pressure resistance more than 1000 volts, and be able to bear burst
The influence of voltage and heavy current impact.Therefore, the difference based on above-mentioned production technology between the two, the two cannot be integrated into single
Chip.Conventional way is in the prior art: input circuit of the rectifier bridge being made of four diodes as alternating current provides
The direct current of pulsation is converted to by alternating current, then is smoothly worked for the IC circuit of rear class by filter capacitor.Here rectifier bridge and
IC power management chip, the two separately welds the volume for being thus bound to cause circuit board on circuit boards and cost cannot
It is controlled well, affects the competitiveness and extensive use of entire product.In addition, existing LED circuit and charger its
The freewheeling diode (or chip) and transient voltage suppressor (or chip) used in are also separated, integrated journey
Degree is not high, also affects the miniaturization of circuit.
Therefore, how providing one kind, integration degree is high, circuit is small in size, manufacturing cost is low and easily controllable power supply mould
Block becomes the project for needing to study at present.
Summary of the invention
In order at least solve the prior art defect described in above-mentioned background technology part, the present invention provides a kind of electricity
Source module, the power module include being integrated in the intracorporal AC-DC chip of same encapsulation and rectifier diode chip.AC-DC core
Piece is equipped with multiple pads and is configured to execute the power module and manages and controls, and rectifier diode chip has and institute
Multiple pins of AC-DC chip connection are stated, and are configured to the alternating current of input being converted into direct current.The AC-DC core
Piece and the rectifier diode chip are integrated in the packaging body with multiple pins to form an individual integrated circuit.Institute
It states AC-DC chip and the rectifier diode chip passes through related pad and pin is connected with the relevant pins of the packaging body
It connects, to realize that power supply exports in operation.
In one embodiment, the AC-DC chip includes MOS type field-effect tube, will pass through control
Energy is stored in energy storage component by the switch for making the MOS type field-effect tube.
In another embodiment, the power module further comprises being integrated in the intracorporal freewheeling diode of encapsulation
Chip, high voltage control end and the high-voltage end being connected in multiple pins of the packaging body.
In yet another embodiment, power module further comprises being integrated in the intracorporal freewheeling diode core of encapsulation
Piece, one end is connected to the high voltage control end in multiple pins of the packaging body, and its other end is connected to the packaging body
Outer transient voltage suppressor chip.
In one embodiment, power module further comprises being integrated in the intracorporal transient voltage of encapsulation to inhibit two poles
Tube chip, one end is connected to the high voltage control end in multiple pins of the packaging body, and its other end is connected to the envelope
Fill external freewheeling diode chip.
In another embodiment, power module further comprises being integrated in the intracorporal transient voltage of encapsulation to inhibit two
Pole pipe chip and freewheeling diode chip, high voltage control end and the high-voltage end being connected in multiple pins of the packaging body.
In yet another embodiment, power module further comprises being integrated in the intracorporal metal oxide of encapsulation partly to lead
Figure field effect tube chip a, wherein pad of the AC-DC chip is connected to the MOS type field effect
The grid of tube chip is answered, and the drain electrode of the MOS type field effect tube chip is connected to the institute of the packaging body
State the high voltage control end in multiple pins.
In another embodiment, power module further comprises being integrated in the intracorporal freewheeling diode core of encapsulation
Piece, high voltage control end and the high-voltage end being connected in the multiple pin of the packaging body.
In one embodiment, power module further comprises being integrated in the intracorporal freewheeling diode chip of encapsulation,
One end is connected to the high voltage control end in multiple pins of the packaging body, and its other end is connected to outside the packaging body
Transient voltage suppressor.
In another embodiment, power module further comprises being integrated in the intracorporal transient voltage of encapsulation to inhibit two
Pole pipe chip, one end are connected to the high-voltage end in the multiple pin of the packaging body, and its other end be connected to it is described
Freewheeling diode chip outside packaging body.
In yet another embodiment, power module further comprises being integrated in the intracorporal transient voltage of encapsulation to inhibit two
Pole pipe chip and freewheeling diode chip, high voltage control end and the high-voltage end being connected in multiple pins of the packaging body.
By the above-mentioned description to the solution of the present invention and its multiple embodiments, it will be appreciated by those skilled in the art that this hair
Bright power module can form individual one by integrating rectifier diode chip and AC-DC chip in a package
A integrated circuit overcomes and due to the difference and difficulty in production technology is difficult to that the two is integrated in list simultaneously in the prior art
One chip improves entire product so that the power module after miniaturization can be more broadly applicable in various lighting apparatus
Competitiveness.In addition, it is electric that the illumination of driving LED light group and charger etc. can be controlled in a manner of extremely letter using the solution of the present invention
Road, therefore the solution of the present invention is also suitable for the LED illumination having higher requirements to route plate bulk and cost driving, mobile phone charging
A variety of AC-DC field of power supplies such as device.
Detailed description of the invention
Main feature of the invention is specifically described in the appended claims.By reference to using original of the invention
The features as discussed above that the illustrative embodiments of reason is illustrated, it will the features and advantages of the present invention are obtained more preferable
Understanding.In the accompanying drawings:
Fig. 1, Fig. 2 and Fig. 3 are the exemplary LED drive circuits of the prior art；
Fig. 4 is the circuit diagram for showing power module according to the present invention；And
Fig. 5-Figure 18 is the structure chart for showing the power module of multiple and different embodiments according to the present invention.
Specific embodiment
In view of the deficiencies of the prior art, the present invention provides a kind of completely new achievable solutions.Particularly, pass through
Flexible chip portfolio integrates to meet different requirements.By following description, it will be appreciated by those skilled in the art that
The present invention relates to a variety of different power module (or power module group) embodiments.Under the introduction of the disclosure, this field
Technical staff can modify to exemplary circuit configuration of the invention, connection relationship or be replaced to certain components, and
These modifications or substitutions are still fallen in the protection scope that the present invention is defined by the claims.
The embodiment of the present invention is specifically described below in conjunction with attached drawing.
Fig. 4 is the circuit diagram for showing power module 100 according to the present invention.As shown in figure 4, power supply mould of the invention
Block 100 includes AC-DC chip (or IC power management chip) 5 and rectifier diode chip 1,2,3,4.The AC-DC chip 5 can
It is managed and controlled with being equipped with multiple pads and being configured to execute the power module 100.Rectifier diode chip 1,2,3,4
With the multiple pins connecting with the AC-DC chip 5, and it is configured to the alternating current of input being converted into direct current.Root
According to the solution of the present invention, the AC-DC chip 5 and the rectifier diode chip 1,2,3,4 are integrated in multiple pins
In packaging body 14, and the AC-DC chip 5 and the rectifier diode chip 1,2,3 and 4 pass through related pad and pin with
The relevant pins of the packaging body 14 are connected, so as to realize in operation power supply export, such as to LED circuit carry out driving or
It charges to external portable equipment.
Fig. 5 is the structure chart for showing power module according to an embodiment of the invention.Power supply shown by the structure chart
Module improves circuit structure shown in Fig. 1, to provide Linear Control drive scheme.As shown in Figure 5, rectifier diode core
Piece 1,2,3,4 (amounting to four chips) and AC-DC chip 5 (including MOS type field-effect tube (" MOSFET "))
It is integrated in a packaging body (such as plastic-sealed body) 14 to form an individual integrated circuit.
As shown in Figure 5, which has multiple pins and including five chip above-mentioned, at least one lead
Frame 8,9,10,11 and a plurality of metal lead wire 13.Rectifier diode chip 1,2,3,4 is by being welded on copper frame and lead
The techniques such as bonding realize bridge rectifier, and provide four external pins, and two ac input ends (AC1/AC2), one altogether
Hold (GND) and a high-voltage end (HV).The AC-DC chip 5 is drawn by copper frame welding or silver paste bonding and a plurality of bonding
Line realizes the function connects of circuit, and provides four outer pins, and copper frame is equipped at least three pads, one on AC-DC chip 5
A pad connects high voltage control end (DRAIN), 5 ground pad of AC-DC chip and the rectification two of packaging body 14 by bonding wire
1,2,3,4 common ground of pole pipe chip is passed through by be connected external common ground (GND), the sampling end of AC-DC chip 5 of bonding wire 13
13 external terminals (CS) of bonding wire.
Fig. 6 is the structure chart for showing power module in accordance with another embodiment of the present invention.Electricity shown by the structure chart
Source module improves circuit structure shown in Fig. 2, to provide non-isolated drive scheme processed.Specifically, which includes
It is integrated in the intracorporal freewheeling diode chip 6 of encapsulation, the high voltage control being connected in multiple pins of the packaging body
Hold (DRAIN) and high-voltage end (HV).
As shown in fig. 6, shown power module includes by four kenotron chips, 1,2,3,4, AC-DC core
Piece 5 (containing MOSFET), a freewheeling diode chip 6, six integrated chips are in a package to form individual one
A integrated circuit.Packaging body 14 have multiple pins and its in altogether include six chips above-mentioned, at least four lead frames
8,9,10,11 and a plurality of metal lead wire 13.Four rectifier diode chips are by being welded on copper frame and wire bonding etc.
Technique realizes bridge rectifier, and provides four external pins, two ac input ends (AC1/AC2), a common ground (GND)
With a high-voltage end (HV).In illustrative connection, the AC-DC chip 5 by copper frame welding or silver paste bonding and
A plurality of bonding wire realizes the function connects of circuit, and provides four pins, and copper frame is equipped at least four pads, AC-DC core
A pad on piece 5 is connected to the high-voltage end (HV) of packaging body 14, the high-voltage end of this pin and rectifier bridge by bonding wire
(HV) it shares.Further, a pad on AC-DC chip 5 is connected to the high voltage control end of packaging body 14 by bonding wire
(DRAIN), 5 ground pad of AC-DC chip and the common ground of rectifier diode chip are connected (GND), AC-DC by bonding wire
The sampling end of chip 5 passes through the external terminal (CS) of bonding wire.Additionally, freewheeling diode chip 6 passes through internal one
The method of a copper pad and bonding wire is connected to high-voltage end (HV) and high voltage control end (DRAIN).
Fig. 7 is the structure chart for showing the power module of another embodiment according to the present invention.Electricity shown by the structure chart
Source module improves circuit structure shown in Fig. 3, and control driving is isolated to provide.Specifically, which includes four
1,2,3,4, AC-DC chip 5 of kenotron chip (containing MOSFET), a transient voltage suppressor chip
7 and a freewheeling diode chip 6, seven integrated chips are in a packaging body 14 to form individual integrated circuit.Fig. 7
The shown power module is not only suitable for high efficiency driving LED light group, is also suitable for charger application.
As shown in fig. 7, packaging body 14 includes multiple pins and is internally provided with including seven chips above-mentioned, at least five
A lead frame 8,9,10,11,12 and a plurality of metal lead wire 13.Rectifier diode chip 1,2,3,4 is by being welded to copper frame
Bridge rectifier is realized with techniques such as wire bondings on frame, and four external pins, two ac input end (AC1/ are provided
AC2), a common ground (GND) and a high-voltage end (HV).In illustrative connection, AC-DC chip 5 is welded by copper frame
It connects or silver paste is bonded and a plurality of bonding wire realizes the function connects of circuit, and four pins are provided, copper frame is equipped at least
Five pads.In illustrative connection, a pad on the AC-DC chip 5 is connected to packaging body by bonding wire
The high-voltage end (HV) of 14 high-voltage end (HV), this pin and rectifier bridge is shared.In addition, a pad on AC-DC chip 5 passes through
Bonding wire is connected to the high voltage control end (DRAIN) of packaging body 14 and 5 ground pad of AC-DC chip and diode rectification
Chip common ground is connected (GND) by bonding wire, and the sampling end of AC-DC chip 5 passes through the external terminal of bonding wire
(CS).Transient voltage suppressor (TVS) chip 7 can be connected with freewheeling diode chip 6 by internal two
Pad and the method for bonding wire be connected to the high-voltage end (HV) and high voltage control end (DRAIN) of packaging body 14.
Fig. 8 is the structure chart for showing the power module of another embodiment according to the present invention.Electricity shown by the structure chart
Source module improves circuit structure shown in Fig. 3, and control driving is isolated to provide.Specifically, which includes four
1,2,3,4, AC-DC chip 5 of kenotron chip (containing MOSFET), a freewheeling diode chip 6, this six
Integrated chip forms an individual integrated circuit in packaging body 14.
As shown in Figure 8, packaging body 14 includes multiple pins and is internally provided with six chips, at least five above-mentioned
Lead frame 8,9,10,11,12 and a plurality of metal lead wire 13 with pad.Rectifier diode chip 1,2,3,4 passes through welding
Bridge rectifier is realized with techniques such as wire bondings on to copper frame, and four external pins, two ac input ends are provided
(AC1/AC2), a common ground (GND) and a high-voltage end (HV).In illustrative connection, the AC-DC chip 5 passes through
Copper frame welding or silver paste bonding and a plurality of bonding wire realize the function connects of circuit, a pad on AC-DC chip 5
It is connected to the high-voltage end (HV) of packaging body 14 by bonding wire, the high-voltage end (HV) of this pin and rectifier bridge is shared.AC-DC core
A pad on piece 5 is connected to the high-voltage end (HV) of packaging body 14 by bonding wire, this pin and diode rectifier bridge
High-voltage end (HV) is shared.Further, a pad on AC-DC chip 5 is connected to the high pressure of packaging body 14 by bonding wire
Control terminal (DRAIN), ground pad and the rectification chip common ground of AC-DC chip 5 by bonding wire be connected (GND) and
The sampling end of AC-DC chip 5 passes through the external terminal (CS) of bonding wire.In addition, one end of freewheeling diode chip 6 passes through
The method of internal copper pad and bonding wire is connected to the high voltage control end (DRAIN) of packaging body, and the other end can connect
Transient voltage suppressor chip outside to packaging body.According to the present invention, circuit structure shown in Fig. 8 is simple, it is bigger to have
Fan-out capability, and have good reliability.
Fig. 9 is the structure chart for showing the power module of another embodiment according to the present invention.Electricity shown by the structure chart
Source module improves circuit structure shown in Fig. 3, and control driving is isolated to provide.Specifically, which includes four
1,2,3,4, AC-DC chip 5 of kenotron chip (containing MOSFET) and a transient voltage suppressor
(TVS) chip 7, six integrated chips are in a package to form an individual integrated circuit.
As shown in Figure 9, packaging body 14 has multiple pins and is internally provided with six chips, at least five above-mentioned
Lead frame 8,9,10,11,12 and a plurality of metal lead wire 13 with pad.Rectifier diode chip 1,2,3,4 passes through welding
Bridge rectifier is realized with techniques such as wire bondings on to copper frame, and four external pins, two ac input ends are provided
(AC1/AC2), a common ground (GND) and a high-voltage end (HV).In illustrative connection, AC-DC chip 5 passes through copper
Frame welding or silver paste bonding and a plurality of bonding wire realize the function connects of circuit, and a pad thereon is drawn by bonding
Line is connected to the high-voltage end (HV) of packaging body 14, and the high-voltage end (HV) of this pin and diode rectifier bridge is shared.Further, AC-
A pad on DC chip 5 is connected to the high-voltage end (HV) of packaging body 14, this pin and diode rectification by bonding wire
The high-voltage end (HV) of bridge is shared.In addition, a pad on AC-DC chip 5 is connected to the height of packaging body 14 by bonding wire
It presses control terminal (DRAIN), and 5 ground pad of AC-DC chip is connected (GND) by bonding wire with rectification chip common ground.
In addition, the sampling end of AC-DC chip 5 passes through the external terminal (CS) of bonding wire.As shown, the transient voltage inhibits
Diode chip for backlight unit 7 can be connected to high-voltage end (HV) by the method for internal copper pad and bonding wire, and its other end connects
The freewheeling diode chip 6 being connected to outside packaging body.According to the present invention, circuit structure shown in Fig. 9 it is simple, with bigger output energy
Power, and there is good reliability.
Figure 10 is the structure chart for showing power module in accordance with another embodiment of the present invention.Electricity shown by the structure chart
Source module improves circuit structure shown in Fig. 2, to provide non-isolated drive scheme processed.Specifically, which includes
Four kenotron chips 1,2,3,4 and an AC-DC chip 5 (containing MOSFET), five integrated chips are at one
To form an individual integrated circuit in packaging body.
As shown in Figure 10, packaging body 14 has multiple pins and internal setting four chips as described above, extremely altogether
Few four lead frames 8,9,10,11 and a plurality of metal lead wire 13.Rectifier diode chip 1,2,3,4 is by being welded to copper frame
Bridge rectifier is realized with techniques such as wire bondings on frame, and four external pins, two ac input end (AC1/ are provided
AC2), a common ground (GND) and a high-voltage end (HV).In illustrative connection, AC-DC chip 5 is welded by copper frame
It connects or silver paste is bonded and a plurality of bonding wire realizes the function connects of circuit, and four pins are provided, copper frame is equipped at least
Three pads, a pad on AC-DC chip 5 are connected to the high-voltage end (HV) of packaging body 14, this pin by bonding wire
It is shared with the high-voltage end (HV) of rectifier bridge.Further, a pad on AC-DC chip 5 is connected to encapsulation by bonding wire
The high voltage control end (DRAIN) of body 14 and its ground pad is connected with rectifier diode chip common ground by bonding wire
(GND).In addition, the sampling end of AC-DC chip 5 passes through the external terminal (CS) of bonding wire.
Figure 11 is the structure chart for showing the power module of another embodiment according to the present invention.Electricity shown by the structure chart
Source module improves circuit structure shown in Fig. 3, and control driving is isolated to provide.Specifically, shown power module includes four
A kenotron chip 1,2,3,4 and an AC-DC chip 5 (containing MOSFET), which seals at one
It fills in body to form an individual integrated circuit.
As shown in figure 11, packaging body 14 has multiple pins and is internally provided with five chips, at least four above-mentioned
Lead frame 8,9,10,11 and a plurality of metal lead wire 13 with pad.Rectifier diode chip 1,2,3,4 is by being welded to copper
Bridge rectifier is realized with techniques such as wire bondings on frame, and four external pins, two ac input end (AC1/ are provided
AC2), a common ground (GND) and a high-voltage end (HV).In illustrative connection, AC-DC chip 5 is welded by copper frame
It connects or silver paste is bonded and the function connects of a plurality of bonding wire realization circuit, and a pad on AC-DC chip 5 passes through
Bonding wire is connected to the high-voltage end (HV) of packaging body 14, and the high-voltage end (HV) of this pin and rectifier bridge is shared.Further, AC-
A pad on DC chip 5 is connected to the high-voltage end (HV) of packaging body 14, this pin and rectifier diode by bonding wire
The high-voltage end (HV) of chip is shared.Further, a pad on AC-DC chip 5 is connected to packaging body 14 by bonding wire
High voltage control end (DRAIN), 5 ground pad of AC-DC chip with rectification chip common ground (GND) is connected simultaneously by bonding wire
And the sampling end of AC-DC chip 5 passes through the external terminal (CS) of bonding wire.
In the as above various power modules in conjunction with described in attached drawing, AC-DC chip 5 all includes metal-oxide semiconductor (MOS)
Type field-effect tube (MOSFET) controls the switch of the MOS type field-effect tube and deposits energy will pass through
It is stored in energy storage component.
Figure 12 is the structure chart for showing power module in accordance with another embodiment of the present invention.Electricity shown by the structure chart
Source module improves circuit structure shown in Fig. 2, to provide non-isolated drive scheme processed.Specifically, which includes
Four kenotron chips, 1,2,3,4, AC-DC chip 5, one independent MOSFET chip, 15, afterflows
Diode chip for backlight unit 6, seven integrated chips are in a package to form an individual integrated circuit.
As shown in Figure 12, packaging body 14 has multiple pins and is internally provided with seven chips above-mentioned, at least four
A lead frame 8,9,10,11 and a plurality of metal lead wire 13 with pad.Rectifier diode chip 1,2,3,4 is by being welded to
Bridge rectifier is realized with techniques such as wire bondings on copper frame, and four external pins, two ac input end (AC1/ are provided
AC2), a common ground (GND) and a high-voltage end (HV).In illustrative connection, AC-DC chip 5 is welded by copper frame
It connects or silver paste is bonded and a plurality of bonding wire realizes the function connects of circuit, and four pins are provided, copper frame is equipped at least
Four pads, a pad on AC-DC chip 5 are connected to the high-voltage end (HV) of packaging body 14, this pin by bonding wire
It is shared with the high-voltage end (HV) of rectifier bridge, a pad on AC-DC chip 5 is connected to MOSFET chip 15 by bonding wire
Grid (G).Further, 5 ground pad of AC-DC chip and rectification chip common ground are connected (GND), AC-DC by bonding wire
The sampling end of chip 5 passes through the external terminal (CS) of bonding wire.In addition, freewheeling diode chip 6 passes through internal one
The method of copper pad and bonding wire is connected to the high-voltage end (HV) and high voltage control end (DRAIN) of packaging body.
Figure 13 is the structure chart for showing the power module of another embodiment according to the present invention.Electricity shown by the structure chart
Source module improves circuit structure shown in Fig. 3, and control driving is isolated to provide.Specifically, shown power module includes four
15, transient electricals of a 1,2,3,4, AC-DC chip 5, one independent MOSFET chip of kenotron chip
Constrain diode chip for backlight unit 7 processed and freewheeling diode chip 6, eight integrated chips are in a package to form individual one
A integrated circuit.
As shown in Figure 13, packaging body 14 has multiple pins and internal setting eight chips, at least six above-mentioned
Lead frame 8,9,10,11,12,16 and a plurality of metal lead wire 13 with pad.Rectifier diode chip 1,2,3,4 passes through weldering
It is connected on copper frame and the techniques such as wire bonding realizes bridge rectifier, and four external pins, two ac input ends are provided
(AC1/AC2), a common ground (GND) and a high-voltage end (HV).In illustrative connection, AC-DC chip 5 passes through copper
Frame welding or silver paste bonding and a plurality of bonding wire realize the function connects of circuit, and a pad on AC-DC chip 5 is logical
Cross the high-voltage end (HV) that bonding wire is connected to packaging body 14, the high-voltage end (HV) of this pin and rectifier bridge is shared.Further,
A pad on AC-DC chip 5 connects 15 grid of MOSFET chip (G) by bonding wire, 5 ground pad of AC-DC chip
It is connected (GND) with rectification chip common ground by bonding wire and the sampling end of AC-DC chip 5 passes through bonding wire external one
A terminal (CS).In addition, freewheeling diode 6 and 7 chip of transient voltage suppressor chip pass through an internal copper pad
The high-voltage end (HV) and high voltage control end (DRAIN) of packaging body 14 are connected to the method for bonding wire.
Figure 14 is the structure chart for showing the power module of another embodiment according to the present invention.Electricity shown by the structure chart
Source module improves circuit structure shown in Fig. 3, and control driving is isolated to provide.Specifically, shown power module includes four
The 15, afterflows two of a 1,2,3,4, AC-DC chip 5, one independent MOSFET chip of kenotron chip
Pole pipe chip 6, seven integrated chips are in a package to form an individual integrated circuit.
As shown in Figure 14, which has multiple pins and internal seven chips as described above, extremely of being arranged
Few six lead frames 8,9,10,11,12,16 and a plurality of metal lead wire 13 with pad.Rectifier diode chip 1,2,3,4
Bridge rectifier is realized with techniques such as wire bondings by being welded on copper frame, and four external pins are provided, two exchanges
Input terminal (AC1/AC2), a common ground (GND) and a high-voltage end (HV).In illustrative connection, AC-DC chip 5
The function connects that circuit is realized by copper frame welding or silver paste bonding and a plurality of bonding wire, one on AC-DC chip 5
Pad is connected to the high-voltage end (HV) of packaging body 14 by bonding wire, and the high-voltage end (HV) of this pin and rectifier bridge is shared.Into
One step, a pad on AC-DC chip 5 are connected to 15 grid of MOSFET chip (G) by bonding wire, and AC-DC chip 5 connects
Ground pad is connected (GND) with rectification chip common ground by bonding wire, and the sampling end of AC-DC chip 5 is drawn by bonding
The external terminal (CS) of line.In addition, the freewheeling diode chip 6 restored fastly and external transient voltage suppressor chip
7 are connected, and the high voltage control end of packaging body 14 is connected to by the method for internal a copper pad and bonding wire
(DRAIN)。
Figure 15 is the structure chart for showing the power module of another embodiment according to the present invention.Electricity shown by the structure chart
Source module improves circuit structure shown in Fig. 3, and control driving is isolated to provide.Specifically, shown power module includes four
15, transient electricals of a 1,2,3,4, AC-DC chip 5, one independent MOSFET chip of kenotron chip
Constrain diode chip for backlight unit 7 processed, seven integrated chips are in a package to form an individual integrated circuit.
As shown in figure 15, packaging body 14 has multiple pins and is internally provided with seven chips, at least six above-mentioned
Lead frame 8,9,10,11,12,16 and a plurality of metal lead wire 13 with pad.In illustrative connection, rectifier diode
Chip 1,2,3,4 and provides external four and draws by being welded on copper frame and the techniques such as wire bonding realize bridge rectifier
Foot, two ac input ends (AC1/AC2), a common ground (GND) and a high-voltage end (HV).AC-DC chip 5 passes through copper frame
Frame welding or silver paste bonding and a plurality of bonding wire realize the function connects of circuit, and a pad on AC-DC chip 5 passes through
Bonding wire is connected to the high-voltage end (HV) of packaging body 14, and the high-voltage end (HV) of this pin and rectifier bridge is shared.AC-DC chip 5
On a pad 15 grid of MOSFET chip (G) is connected to by bonding wire, 5 ground pad of AC-DC chip and rectification core
Piece common ground is connected (GND) by bonding wire, and the sampling end of AC-DC chip 5 passes through the external terminal of bonding wire
(CS).In addition, transient voltage suppressor chip 7 is connected with the freewheeling diode chip 6 outside packaging body, and pass through inside
A copper pad and the method for bonding wire be connected to the high-voltage end (HV) of packaging body.
Figure 16 is the structure chart for showing power module according to an embodiment of the invention.Power supply shown by the structure chart
Module improves circuit structure shown in Fig. 1, to provide Linear Control drive scheme.Specifically, power module includes four
1,2,3,4,5, independent MOSFET chip 15 of AC-DC chip of kenotron chip, six chipsets
At in a package to form an individual integrated circuit.
As shown in Figure 16, packaging body 14 has multiple pins and is internally provided with six chips above-mentioned, at least five
A lead frame 8,9,10,11,16 and a plurality of metal lead wire 13 with pad.In illustrative connection, rectifier diode
Chip 1,2,3,4 and provides external four and draws by being welded on copper frame and the techniques such as wire bonding realize bridge rectifier
Foot, two ac input ends (AC1/AC2), a common ground (GND) and a high-voltage end (HV).Further, AC-DC chip 5
The function connects of circuit are realized by copper frame welding or silver paste bonding and a plurality of bonding wire, a pad thereon passes through
Bonding wire is connected to MOSFET grid (G).In addition, 5 ground pad of AC-DC chip is drawn with rectification chip common ground by being bonded
Line is connected with common ground (GND) and the sampling end of AC-DC chip 5 passes through the external terminal (CS) of bonding wire.Into one
Step, MOSFET chip 15, which drains, is connected to the high voltage control end (DRAIN) of packaging body 14.
Figure 17 is the structure chart for showing power module in accordance with another embodiment of the present invention.Electricity shown by the structure chart
Source module improves circuit structure shown in Fig. 2, to provide non-isolated drive scheme processed.Specifically, which includes
Four kenotron chips, 1,2,3,4,5, independent MOSFET chip of AC-DC chip, six chips
It integrates in a package to form an individual integrated circuit.
As shown in figure 17, which has multiple pins and is internally provided with six chips above-mentioned, at least five
A lead frame 8,9,10,11,12,16 and a plurality of metal lead wire with pad.Wherein in illustrative connection, rectification two
Pole pipe chip 1,2,3,4 and provides external four by being welded on copper frame and the techniques such as wire bonding realize bridge rectifier
A pin, two ac input ends (AC1/AC2), a common ground (GND) and a high-voltage end (HV).AC-DC chip 5 can
To realize the function connects of circuit by copper frame welding or silver paste bonding and a plurality of bonding wire, a pad thereon is logical
Bonding wire is crossed to be connected with high-voltage end (HV).In addition, a pad on AC-DC chip 5 is connected to by bonding wire
MOSFET grid (G), and its ground pad is connected by bonding wire with common ground (GND) with rectifier diode chip common ground
It connects, and the sampling end of AC-DC chip 5 passes through the external terminal (CS) of bonding wire.In addition, the drain electrode of MOSFET is connected to
The high voltage control end (DRAIN) of packaging body.
Figure 18 is the structure chart for showing the power module of another embodiment according to the present invention.Electricity shown by the structure chart
Source module improves circuit structure shown in Fig. 3, and control driving is isolated to provide.Specifically, shown power module includes four
1,2,3,4,5, independent MOSFET chip 15 of AC-DC chip of a kenotron chip, six chips
It integrates in a package to form an individual integrated circuit.
As shown in figure 18, packaging body 14 has multiple pins and is internally provided with six chips, at least five above-mentioned
Lead frame 8,9,10,11,16 and a plurality of metal lead wire 13 with pad.In illustrative connection, rectifier diode core
Piece 1,2,3,4 and provides four external pins by being welded on copper frame and the techniques such as wire bonding realize bridge rectifier,
Two ac input ends (AC1/AC2), a common ground (GND) and a high-voltage end (HV).Further, AC-DC chip 5 passes through
Copper frame welding or silver paste bonding and a plurality of bonding wire realize the function connects of circuit, and a pad thereon passes through bonding
Lead is connected with high-voltage end (HV).In addition, a pad on AC-DC chip 5 is connected to MOSFET core by bonding wire
15 grid of piece (G), 5 ground pad of AC-DC chip are connected by bonding wire with common ground (GND) with rectification chip common ground
It connects, and the sampling end of AC-DC chip 5 passes through the external terminal (CS) of bonding wire.Further, MOSFET chip 15 drains
It is connected to the high voltage control end (DRAIN) of packaging body.
Through the above description, it will be appreciated by those skilled in the art that in above scheme and its different embodiments of the invention
In, executing alternating current to what direct circulation was changed can be rectifier diode chip or rectifier circuit.AC-DC chip can integrate
Control logic circuit, and can be divided into comprising mosfet transistor and without MOSFET pipe two types.Freewheeling diode can be with
Using the diode restored fastly, so as to afterflow or reverse current is absorbed, and ensures that the magnetic of inductance restores.TVS pipe or chip can be with
To be connected with freewheeling diode with absorption circuit electric current, to ensure that the magnetic of inductance restores.
In addition, copper lead frame of the invention can be used as integrated chip welding carrier and play the role of electric connection.Into
One step, bonding wire of the invention can be ultrasonic bond, gold ball bonding and laser welding in lead technique, in material
Si-Al wire, crude aluminum line, gold thread and copper wire can be compatible with.In addition, the number of pins of packaging body of the invention can be it is multiple (such as
It is not limited to eight pins), and can according to need the pin allowed using other quantity.
Technical solution of the present invention is described in detail above in conjunction with attached drawing of the invention.Pass through foregoing description, this field
Technical staff is understood that power module of the invention by encapsulating rectifier diode chip and AC-DC integrated chip at one
In vivo, an individual integrated circuit is formd significantly to reduce whole to overcome technological deficiency existing in the prior art
The volume of body product is further promoted whole so that the power module of miniaturization can be more broadly applicable in various lighting apparatus
The competitiveness and reduction product cost of a product.Further, those skilled in the art are also understood that the solution of the present invention also
Other chip, such as freewheeling diode chip or transient voltage suppressor chip can be further integrated as needed,
To be further simplified circuit structure, and provide effective driving to adjunct circuit.
It is aobvious for those skilled in the art although multiple embodiments of the invention have been shown and described in this specification
And be clear to, such embodiment only provides in an illustrative manner.Those skilled in the art can be without departing from the present invention
The mode for expecting many changes in the case where thought and spirit, changing and substituting.It should be understood that practicing mistake of the invention
Cheng Zhong, can be using the various alternative solutions to invention as described herein embodiment.The appended claims are intended to limit
Protection scope of the present invention, and therefore cover the composition of the module in these scopes of the claims, equivalent or alternative solution.
Claims (10)
1. a kind of power module (100), comprising:
AC-DC chip (5) is equipped with multiple pads and is configured to manage and control the power module (100) execution；With
And
Rectifier diode chip (1,2,3,4) has the multiple pins connecting with the AC-DC chip (5), and configures use
In the alternating current of input is converted into direct current,
Wherein the AC-DC chip (5) and the rectifier diode chip (1,2,3,4) are integrated in the encapsulation with multiple pins
In body (14), and
Wherein the AC-DC chip (5) and the rectifier diode chip (1,2,3,4) pass through related pad and pin with it is described
The relevant pins of packaging body (14) are connected, to realize that power supply exports in operation.
2. power module according to claim 1, wherein the AC-DC chip (5) includes MOS type
Field-effect tube controls the switch of the MOS type field-effect tube energy is stored in energy storage will pass through
It deposits in component.
3. power module according to claim 2 further comprises two pole of afterflow being integrated in the packaging body (14)
Tube chip (6), high voltage control end and the high-voltage end being connected in multiple pins of the packaging body.
4. power module according to claim 2 further comprises two pole of afterflow being integrated in the packaging body (14)
Tube chip (6), one end is connected to the high voltage control end in multiple pins of the packaging body (14), and its other end is connected to
The transient voltage suppressor chip (7) of the packaging body (14) outside.
5. power module according to claim 2 further comprises the transient voltage being integrated in the packaging body (14)
Inhibit diode chip for backlight unit (7), one end is connected to the high voltage control end in multiple pins of the packaging body (14), and its is another
End is connected to the freewheeling diode chip (6) of the packaging body (14) outside.
6. power module according to claim 2 further comprises the transient voltage being integrated in the packaging body (14)
Inhibit diode chip for backlight unit (7) and freewheeling diode chip (6), the high voltage control being connected in multiple pins of the packaging body
End and high-voltage end.
7. power module according to claim 1 further comprises the metal oxidation being integrated in the packaging body (14)
Object semiconductor field effect tube chip (15) a, wherein pad of the AC-DC chip is connected to the metal oxide half
The grid of conductor type field effect tube chip (15), and the drain electrode of the MOS type field effect tube chip (15) connects
It is connected to the high voltage control end in the multiple pin of the packaging body.
8. power module according to claim 7 further comprises two pole of afterflow being integrated in the packaging body (14)
Tube chip (6), the high voltage control end being connected in the multiple pin of the packaging body (14) and high-voltage end.
9. power module according to claim 7 further comprises two pole of afterflow being integrated in the packaging body (14)
Tube chip (6), one end is connected to the high voltage control end in multiple pins of the packaging body (14), and its other end is connected to
The transient voltage suppressor chip (7) of the packaging body (14) outside.
10. power module according to claim 7, further comprises:
The transient voltage suppressor chip (7) being integrated in the packaging body (14), one end are connected to the packaging body
(14) the high-voltage end in the multiple pin, and its other end is connected to the freewheeling diode chip of the packaging body (14) outside
(6)；Or
The transient voltage suppressor chip (7) and freewheeling diode chip (6) being integrated in the packaging body (14) connect
The high voltage control end being connected in multiple pins of the packaging body (14) and high-voltage end.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2019106850500 | 2019-07-27 | ||
| CN201910685050 | 2019-07-27 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN110474541A true CN110474541A (en) | 2019-11-19 |
Family
ID=68367702
Family Applications (4)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201921334717.4U Active CN210327398U (en) | 2019-07-27 | 2019-08-17 | Power supply module |
| CN201921334575.1U Active CN210327397U (en) | 2019-07-27 | 2019-08-17 | Power supply module |
| CN201910760527.7A Pending CN110474541A (en) | 2019-07-27 | 2019-08-17 | Power module |
| CN201910760962.XA Pending CN110417283A (en) | 2019-07-27 | 2019-08-17 | Power module |
Family Applications Before (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201921334717.4U Active CN210327398U (en) | 2019-07-27 | 2019-08-17 | Power supply module |
| CN201921334575.1U Active CN210327397U (en) | 2019-07-27 | 2019-08-17 | Power supply module |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910760962.XA Pending CN110417283A (en) | 2019-07-27 | 2019-08-17 | Power module |
Country Status (1)
| Country | Link |
|---|---|
| CN (4) | CN210327398U (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN210327398U (en) * | 2019-07-27 | 2020-04-14 | 山东晶导微电子股份有限公司 | Power supply module |
| CN110391689A (en) * | 2019-09-05 | 2019-10-29 | 山东晶导微电子股份有限公司 | Power module |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201467522U (en) * | 2009-07-20 | 2010-05-12 | 江苏宏微科技有限公司 | Dynamic energy-saving illumination power supply device |
| CN102263094A (en) * | 2011-08-14 | 2011-11-30 | 绍兴旭昌科技企业有限公司 | Non-interconnected multi-chip package diode |
| CN204465969U (en) * | 2015-02-25 | 2015-07-08 | 苏州智浦芯联电子科技有限公司 | Power device closes the LED drive circuit encapsulating structure of envelope |
| CN105025627A (en) * | 2015-07-27 | 2015-11-04 | 苏州智浦芯联电子科技有限公司 | LED (Light-Emitting Diode) driving circuit packaging structure packaged with rectifier bridge device and illuminating system |
| CN210327397U (en) * | 2019-07-27 | 2020-04-14 | 山东晶导微电子股份有限公司 | Power supply module |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2009055821A1 (en) * | 2007-10-26 | 2009-04-30 | Lighting Science Group Corporation | High efficiency light source with integrated ballast |
| JP2009218475A (en) * | 2008-03-12 | 2009-09-24 | Sharp Corp | Output control device, and ac/dc power source device and circuit device using the same |
| US8916902B2 (en) * | 2013-04-17 | 2014-12-23 | Ubleds Co., Ltd. | LED module packaging structure with an IC chip |
| US9224702B2 (en) * | 2013-12-12 | 2015-12-29 | Amazing Microelectronic Corp. | Three-dimension (3D) integrated circuit (IC) package |
| CN204291474U (en) * | 2014-11-27 | 2015-04-22 | 比亚迪股份有限公司 | LED illumination drive unit and the vehicle with this drive unit |
| CN207150893U (en) * | 2017-07-17 | 2018-03-27 | 飞利浦照明（中国）投资有限公司 | Lighting circuit and lamp |
-
2019
- 2019-08-17 CN CN201921334717.4U patent/CN210327398U/en active Active
- 2019-08-17 CN CN201921334575.1U patent/CN210327397U/en active Active
- 2019-08-17 CN CN201910760527.7A patent/CN110474541A/en active Pending
- 2019-08-17 CN CN201910760962.XA patent/CN110417283A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201467522U (en) * | 2009-07-20 | 2010-05-12 | 江苏宏微科技有限公司 | Dynamic energy-saving illumination power supply device |
| CN102263094A (en) * | 2011-08-14 | 2011-11-30 | 绍兴旭昌科技企业有限公司 | Non-interconnected multi-chip package diode |
| CN204465969U (en) * | 2015-02-25 | 2015-07-08 | 苏州智浦芯联电子科技有限公司 | Power device closes the LED drive circuit encapsulating structure of envelope |
| CN105025627A (en) * | 2015-07-27 | 2015-11-04 | 苏州智浦芯联电子科技有限公司 | LED (Light-Emitting Diode) driving circuit packaging structure packaged with rectifier bridge device and illuminating system |
| CN210327397U (en) * | 2019-07-27 | 2020-04-14 | 山东晶导微电子股份有限公司 | Power supply module |
Also Published As
| Publication number | Publication date |
|---|---|
| CN210327397U (en) | 2020-04-14 |
| CN110417283A (en) | 2019-11-05 |
| CN210327398U (en) | 2020-04-14 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US9357604B2 (en) | Light engine with LED switching array | |
| US9970640B2 (en) | LED fluorescent lamp driving power source and LED fluorescent lamp | |
| WO2016169471A1 (en) | Method for constructing led filament lamp and led filament lamp | |
| JP2003528449A (en) | Gate driver multi-chip module | |
| CN110474541A (en) | Power module | |
| CN109300889B (en) | AC-DC chip and high-voltage flywheel diode integrated chip structure and power supply module | |
| CN204465969U (en) | Power device closes the LED drive circuit encapsulating structure of envelope | |
| CN110391689A (en) | Power module | |
| CN201523329U (en) | Direct-plug type double diode small current rectification module | |
| CN210577915U (en) | Power supply module | |
| CN211792144U (en) | Constant current controller packaging device and constant current source load driving device | |
| CN210405108U (en) | Constant voltage power supply circuit | |
| CN106341932B (en) | A kind of piecewise linearity LED drive circuit and method | |
| CN210380679U (en) | Integrated power supply module | |
| CN209146760U (en) | Lamps and lanterns and its communication device | |
| CN208014743U (en) | MicroLED or mini LED encapsulation structures | |
| CN210380684U (en) | Integrated form power module | |
| CN205859624U (en) | Photo engine LED filament | |
| CN203760470U (en) | AC power supply LED device | |
| CN208385390U (en) | Draw the shell of pad in a kind of band | |
| CN214068731U (en) | Integrated circuit packaging element, LED constant current driving circuit and LED system | |
| CN209882157U (en) | LED control chip and step-down drive circuit | |
| CN111343756A (en) | Constant current controller packaging device and driving device | |
| CN110460245A (en) | Constant voltage power supply circuit | |
| CN211531393U (en) | Intelligent LED driving power supply |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |