CN110459676A - The preparation method of resistance-variable storing device - Google Patents
The preparation method of resistance-variable storing device Download PDFInfo
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- CN110459676A CN110459676A CN201910808942.5A CN201910808942A CN110459676A CN 110459676 A CN110459676 A CN 110459676A CN 201910808942 A CN201910808942 A CN 201910808942A CN 110459676 A CN110459676 A CN 110459676A
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- 238000002360 preparation method Methods 0.000 title claims abstract description 21
- 239000000463 material Substances 0.000 claims abstract description 74
- 239000007772 electrode material Substances 0.000 claims abstract description 47
- 238000000151 deposition Methods 0.000 claims abstract description 44
- 230000008021 deposition Effects 0.000 claims abstract description 33
- 239000000758 substrate Substances 0.000 claims abstract description 32
- 239000010410 layer Substances 0.000 claims description 102
- 239000007789 gas Substances 0.000 claims description 30
- 229910052751 metal Inorganic materials 0.000 claims description 30
- 239000002184 metal Substances 0.000 claims description 30
- 239000011229 interlayer Substances 0.000 claims description 14
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 8
- 239000000126 substance Substances 0.000 claims description 8
- 238000000227 grinding Methods 0.000 claims description 6
- 238000012545 processing Methods 0.000 claims description 5
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- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- 239000010936 titanium Substances 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims 1
- 239000010931 gold Substances 0.000 claims 1
- 229910052737 gold Inorganic materials 0.000 claims 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 abstract description 54
- 238000000034 method Methods 0.000 abstract description 32
- 230000008569 process Effects 0.000 abstract description 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 239000013078 crystal Substances 0.000 description 5
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 5
- 229910010271 silicon carbide Inorganic materials 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
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- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
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- 150000004767 nitrides Chemical class 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
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- 229910052731 fluorine Inorganic materials 0.000 description 1
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- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/841—Electrodes
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Abstract
The present invention provides a kind of preparation methods of resistance-variable storing device, including step S1: providing a substrate, the substrate top is equipped with hole；Step S2: Multiple depositions electrode material forms lower electrode in described hole；Step S3: resistive material layer is formed by deposition resistive material in the upper surface of the lower electrode and substrate；Step S4: top electrode is formed above resistive material layer.The present invention uses the method for Multiple depositions electrode material in hole to form lower electrode, solves the problems, such as that the existing filling of titanium nitride electrodes material fill method is discontented in the prior art and filling has cavity, improves process uniformity.
Description
Technical field
The present invention relates to semiconductor field more particularly to a kind of preparation methods of resistance-variable storing device.
Background technique
With the development of semiconductor technology, market for nonvolatile memory demand increasingly to large capacity, low function
The direction transformation of consumption, high density and low cost.Resistance-variable storing device (Resistive Random Access Memory, referred to as
RRAM) the research hotspot as next-generation memory, has very strong application potential, it is considered to be most commercially valuable deposits
Reservoir.But there is also the technique of many deficiencies, especially resistance-variable storing device is uniform for present resistance-variable storing device manufacturing process
The improvement of property, always exists many problems.
Resistance-variable storing device (abbreviation RRAM) generally comprises substrate, lower electrode (abbreviation BE), resistive material layer and top electrode
(abbreviation TE), wherein the electrode material fill process of lower electrode and the resistive material deposition process of resistive material layer are to improve resistive
The key point of memory process uniformity.The electrode material for descending electrode in the prior art is usually titanium nitride (abbreviation TiN), nitrogen
The growth morphology for changing titanium is tufted crystal, and the bore hole size for being used to fill titanium nitride is smaller, and oblique angle is larger, using tradition
Titanium nitride fill method can there is a problem of that filling is discontented and filling has cavity.Lower electrode titanium nitride filling problem and
Pattern also influences whether the deposition process of resistive material layer below, in addition titanium nitride be exposed to outer layer can be to a certain extent by oxygen
Change, also occurs that pattern is uneven when will lead to deposition resistive material layer, therefore traditional titanium nitride fill process and resistive material
Layer depositing operation will lead to that process uniformity is poor, so that the contact resistance of resistive material layer Yu lower electrode can be increased.
Summary of the invention
The purpose of the present invention is to provide a kind of preparation methods of resistance-variable storing device, to solve because of electrode material fill process
The problem for causing resistance-variable storing device process uniformity poor with resistive material layer depositions technique, to reduce resistive material layer under
The contact resistance of electrode.
In order to solve the above technical problems, a kind of preparation method of resistance-variable storing device of the present invention, comprising the following steps:
Step S1: providing a substrate, and the substrate top is equipped with hole；
Step S2: Multiple depositions electrode material forms lower electrode in described hole；
Step S3: resistive material layer is formed in the upper surface of the lower electrode and substrate；
Step S4: top electrode is formed above the resistive material layer.
Optionally, in the resistance-variable storing device, the substrate includes metal interconnecting layer and is located on the metal interconnecting layer
The medium of side stops layer, wherein the metal interconnecting layer includes interlayer dielectric layer and the metal that is formed in the interlayer dielectric layer
Interconnection line, described hole is set to the medium and stops in layer, and exposes the part metal interconnecting wires.
Optionally, in the resistance-variable storing device, the electrode material includes titanium nitride.
Optionally, in the resistance-variable storing device, in the step S2 further include: each deposition of electrode material it
Before, described hole surface is bombarded using rare gas.
Optionally, in the resistance-variable storing device, the rare gas includes argon gas.
Optionally, in the resistance-variable storing device, stop the deposition of electrode material when described hole is filled up by electrode material.
Optionally, in the resistance-variable storing device, in the step S3 further include: formed the resistive material layer it
Before, deoxidation processing is carried out using surface of the reducibility gas to the lower electrode.
Optionally, in the resistance-variable storing device, the reducibility gas includes hydrogen.
Optionally, in the resistance-variable storing device, in the step S3 further include: in use reducibility gas to described
Before the surface of lower electrode carries out deoxidation processing, chemical mechanical grinding is carried out to the upper surface of the lower electrode and substrate,
Remove extra electrode material.
Optionally, in the resistance-variable storing device, in the step S2, the thickness of the electrode material layer deposited every time is small
In the 1/6 of the diameter of described hole.
In conclusion the present invention provides a kind of preparation methods of resistance-variable storing device, including provide a substrate, the substrate
Hole is arranged in top, and filling electrode material forms lower electrode in described hole, is formed in the upper surface of the lower electrode and substrate
Resistive material layer, and top electrode is formed on the resistive material layer.Pass through the Multiple depositions electrode material in described hole
The method for forming lower electrode is solved since the growth morphology of titanium nitride is tufted crystal and the bore hole size for filling titanium nitride
Smaller, oblique angle it is larger and caused by titanium nitride filling is discontented and filling there is a problem of it is empty, so that it is uniform to improve technique
Property, reduce the contact resistance of resistive material layer and lower electrode.
Detailed description of the invention
Fig. 1 is a kind of structural schematic diagram of resistance-variable storing device；
Fig. 2 is the filled structural schematic diagram of titanium nitride of lower electrode in Fig. 1；
Fig. 3 is the filled structural perspective of titanium nitride of lower electrode in Fig. 2；
Fig. 4 is the structural schematic diagram of resistance-variable storing device in one embodiment of the invention；
Fig. 5~Fig. 7 is the schematic diagram of the titanium nitride filling process of lower electrode in one embodiment of the invention；
Fig. 8 is the filled structural perspective of titanium nitride of lower electrode in one embodiment of the invention；
In Fig. 1~3:
01- metal interconnecting layer, 011- interlayer dielectric layer, 012- metal interconnecting wires, 02- medium obstruction layer, 021- hole,
Electrode under 03-, 031- titanium nitride layer, 04- resistive material layer, 05- top electrode；
In Fig. 4~8:
10- metal interconnecting layer, 101- interlayer dielectric layer, 102- metal interconnecting wires, 20- medium obstruction layer, 201- hole,
Electrode under 30-, 301- first electrode material layer, 302- second electrode material layer, 40- resistive material layer, 50- top electrode.
Specific embodiment
Research hotspot of the resistance-variable storing device (RRAM) as next-generation memory, main structure is as shown in Figure 1, include lining
Bottom, lower electrode 03, positioned at the lower electrode 03 and upper surface of substrate resistive material layer 04 and be located at the resistive material layer 04 it
On top electrode 05, hole (not marking in figure) is arranged in the substrate top, and filling electrode material is formed down in described hole
Electrode 03.The substrate includes that metal interconnecting layer 01 and the medium above the metal interconnecting layer 01 stop layer 02, wherein institute
Stating metal interconnecting layer 01 includes interlayer dielectric layer 011 and metal interconnecting wires 012, and described hole is set to the medium and stops layer 02
On, and layer 02 is stopped through the medium, and expose the part metal interconnecting wires 012.Wherein, the interlayer dielectric layer
011 material includes at least one of advanced low-k materials, silica, silicon nitride and silicon oxynitride, preferably low Jie
The material of permittivity material, the metal interconnecting wires 012 is preferably metallic copper, and the material that the medium stops layer 02 is preferably mixed
The silicon carbide (Nitride Doped Silicon Carbide abbreviation NDC) of nitrogen, the electrode of the lower electrode 03 and top electrode 05
Material is preferably titanium nitride (abbreviation TiN), and the material of the resistive material layer 04 is preferably Ta and TaOxMixture.
The electrode material filling of the lower electrode 03 and the resistive material deposition of the resistive material layer 04 are to improve resistive
The key point of memory process uniformity.Since the growth morphology of electrode material titanium nitride is tufted crystal, and it is used to fill
The bore hole size (diameter is 80nm~100nm) of titanium nitride is smaller, and oblique angle larger (described hole bevel edge and medium resistance
Blocking the angle between 02 upper surface of layer is 75~85 °), therefore, traditional titanium nitride fill method can exist filling it is discontented and
There is cavity in filling.
Referring to Fig.2, depositing titanium nitride forms titanium nitride layer 031 in described hole, then the titanium nitride layer 031 passes through
Chemical mechanical grinding forms lower electrode 03.Since the electrode material titanium nitride of lower electrode 03 is grown with tufted, and hole edge is oblique
Angle angle is larger, so if the titanium nitride of primary depositing be more than hole diameter 1/2 when, using hole sidewalls as grow basic point
Titanium nitride may mutually be touched before growing to preset length and generate stress influence, cause titanium nitride tufted crystal to be barricaded as propping up
Frame, to lead to the problem of cavity during filling.The filling problem and pattern of the electrode material of lower electrode 03 also can shadows
The deposition process for arriving resistive material layer is rung, leads to non-uniform pattern also occur when depositing resistive material layer.Again due to electrode material
Material titanium nitride, which is exposed to outer layer, to be oxidized to a certain extent, therefore will increase the contact of resistive material layer 04 with lower electrode 03
Resistance.
The filled structural perspective of titanium nitride of lower electrode 03 is as shown in figure 3, wherein among titanium nitride layer 031 in Fig. 2
White area indicate the region that there is cavity, therefore there is the phenomenon that filling cavity in lower electrode 03.On resistance-variable storing device compared with
Thin titanium nitride filling has the discontented phenomenon of filling, and showing for filling cavity can occur in hole in thicker titanium nitride filling
As, and since titanium nitride is to be grown with the pattern of tufted crystal, and the titanium nitride on hole surface exposes after chemical mechanical polishing
It can be oxidized in air, the non-uniform phenomenon of pattern also occur when so will lead to deposition resistive material layer below.
Based on above-mentioned discovery, the present invention provides a kind of preparation method of resistance-variable storing device, by using multiple in hole
The method of deposition of electrode material forms lower electrode, and electrode material is avoided to generate what empty or filling was discontented with during filling
Phenomenon optimizes the contact of lower electrode and resistive material layer to improve the pattern uniformity of lower electrode and resistive material layer, into
And reduce the contact resistance of resistive material layer Yu lower electrode.
To keep the purpose of the present invention, advantages and features clearer, mentioned below in conjunction with 4~8 pairs of embodiment of the present invention of attached drawing
The preparation method of resistance-variable storing device out is described in further detail.It should be noted that attached drawing is all made of very simplified form
And non-accurate ratio is used, only for the purpose of facilitating and clarifying the purpose of the embodiments of the invention.
Refering to Fig. 4, the present invention provides a kind of preparation methods of resistance-variable storing device, including
Step S1: providing a substrate, and the substrate top is equipped with hole 201；
Step S2: the Multiple depositions electrode material in described hole 201, to form lower electrode 30；
Step S3: resistive material layer 40 is formed in the upper surface of the lower electrode 30 and the substrate；
Step S4: top electrode 50 is formed above the resistive material layer 40.
In step sl, a substrate is provided first, and the substrate top is equipped with hole 201.The substrate can be conventional
Silicon substrate or other substrates comprising semiconducting material.For example, the substrate may include metal interconnecting layer 10 and be located at this
The medium of 10 top of metal interconnecting layer stops layer 20, wherein the metal interconnecting layer 10 includes interlayer dielectric layer 101 and metal
Interconnection line 102, the upper surface of the metal interconnecting wires 102 are flushed with the upper surface of the interlayer dielectric layer 101, and the metal is mutual
102 lower surface of line can flush (metal interconnecting wires 102 run through interlayer dielectric layer 101 at this time) with interlayer dielectric layer 101, can also
In being buried in by the interlayer dielectric layer 101.The interlayer dielectric layer 101 with a thickness of 165nm~180nm, material includes
At least one of advanced low-k materials (Low-k), silica, silicon nitride and silicon oxynitride, preferably low-k material
Material, the advanced low-k materials (Low-k) include SiOCH film, fluorine silica glass (FSG), carbon doping silica
(BlackDiamond) or the silicon carbide of N doping (BLOK) etc..The metal interconnecting wires 102 with a thickness of 120nm~
150nm, material are preferably metallic copper.The material of the medium obstruction layer 20 is preferably silicon carbide (the Nitride Doped of nitrating
Silicon Carbide abbreviation NDC), with a thickness of 25nm~35nm, its object is to prevent metal from spreading into medium.It is described
The hole 201 of substrate top is set to the medium and stops in layer 20, and the diameter of described hole 201 is 80nm~100nm, in circle
Platform shape stops layer 20 through the medium, and exposes the part metal interconnecting wires 102.The quantity of described hole 201 can
Think one, or more than two, the transverse direction when the quantity at least two of described hole 201, between described hole
Distance is greater than 100nm, and each hole exposes the part metal interconnecting wires 102, preferably the size of described hole and
Shape is identical.
Refering to Fig. 5~7, in step s 2, the Multiple depositions electrode material in described hole 201, to form lower electrode 30.
The electrode material of the lower electrode 30 can be for copper, platinum or titanium nitride etc., preferably titanium nitride, with nitrogen in following example
Change titanium as electrode material.The method of 201 Multiple depositions of described hole are as follows: according to the size of specific hole 201, Multiple depositions
Titanium nitride, and the thickness of depositing titanium nitride is less than the 1/6 of 201 diameter of hole every time, when described hole 201 is filled up by electrode material
When stop deposition, i.e. described hole 201 stops deposition when being filled up by titanium nitride.Since each titanium nitride deposition thickness is thinned to
The 1/6 of bore dia will not be influenced each other, thus will not hereinafter, when therefore depositing every time with the titanium nitride that hole wall is growth basic point
Generate cavity.
In addition to this, described hole 201 can also increase rare gas bombardment during Multiple depositions titanium nitride
Technique carries out rare gas bombardment to deposition surface (the especially surface of hole) before each titanium nitride deposition, described
Rare gas can be argon gas or helium etc., preferably argon gas, and the time of each rare gas bombardment is preferably 15s~25s,
Pressure is preferably 100mtorr~200mtorr.Titanium nitride filling depth be no more than 201 depth of described hole (i.e. NDC's
Thickness) circulation in, 201 surface of described hole is bombarded with rare gas before each depositing titanium nitride, to eliminate hole 201
The issuable oxide in surface, can make the filling effect of titanium nitride improve, thus the uniformity of lifting process, so that lower electricity
The pattern of pole is more evenly.For example, carrying out rare gas bombardment to described hole 201 first refering to Fig. 5；Then in described hole
Depositing titanium nitride forms first electrode material layer 301 in 201, and the thickness of the first electrode material layer 301 is less than described hole
The 1/6 of 201 diameters carries out rare gas bombardment to described hole 201 again, removes after being formed to first electrode material layer 301
The issuable oxide in 201 surface of hole is removed, then depositing titanium nitride is described to form second electrode material layer 302 again
Rare gas bombardment is carried out again after the deposition of second electrode material layer 302, is circuited sequentially, until described hole is expired by titanium nitride
When stop deposition.
It is the filled structural perspective of titanium nitride in the present embodiment, it can be found that the centre of lower electrode 30 is white refering to Fig. 8
The hole region of color significantly reduces.Because each deposition thickness be thinned to the 1/6 of bore dia hereinafter, so every time deposition when, with
Hole wall is that the titanium nitride of growth basic point will not influence each other, so that cavity will not be generated；It is no more than hole in depth of cracking closure simultaneously
In the circulation of 201 depth, hole surface is bombarded with rare gas before each depositing titanium nitride, so that eliminating hole surface may produce
Raw oxide, such method can make the filling effect of electrode material improve, to improve the uniformity of technique.
In step s 4, resistive material is deposited in the upper surface of the lower electrode 30 and substrate, to form resistive material
Layer 40.It needs to carry out chemical machinery to the electrode material of the upper surface of lower electrode 30 and substrate before depositing resistive material to grind
Mill, i.e., the upper surface for stopping layer 20 and lower electrode 30 to the medium carries out chemical mechanical grinding, so that the lower electrode 30
Upper surface and the medium stop the upper surface of layer 20 and flush, remove extra electrode material (i.e. titanium nitride).
After the upper surface that the medium stops layer 20 and lower electrode 30 carries out chemical mechanical grinding and resistive material
The pretreated technique of reducing gas can be increased before bed of material deposition, carried out using surface of the reducibility gas to the lower electrode
Deoxidation processing, the reducing gas is preferably hydrogen, and the pressure that the reducing gas pretreating process uses is preferably
50mtorr~150mtorr, i.e., the ingredient that may be oxidized by hydrogen reducing titanium nitride surface remove oxide, under optimization
The contact of electrode and resistive material layer, lifting process uniformity.
It finishes in the electrode material filling of the lower electrode 30 and locates in advance by chemical mechanical grinding and reducing gas
After reason, resistive material layer is deposited in the upper surface that the lower electrode 30 and the medium stop layer 20, forms resistive material
Layer 40.The material of the resistive material layer 40 can be perovskite oxide, including PCMO, LCMO, LPCMO, PZT, SZO,
STO etc.；Molecular material；Mim structure based on electrolyte principle；Transition metal oxide, such as: WOx, NixO, CuxO,
TaOx, ZrO2 etc..In order to which as far as possible and process compatible, the preferably described resistive material is Ta and TaOxMixture, the resistive material
The bed of material 40 with a thickness of 8nm~10nm.
In step s 5, top electrode 50 is formed above the resistive material layer 40, it can by the resistive material
40 disposed thereon electrode material of the bed of material formed top electrode 50, the top electrode 50 with a thickness of 38nm~42nm, material can be
Copper, platinum or titanium nitride etc. are preferably identical as the material of the lower electrode 30.
In the preparation process of the resistance-variable storing device (RRAM), the lower electrode is formed using the method for Multiple depositions, is made
Electrode must be descended not generate cavity in the filling process.It is also possible to bombard hole using rare gas before each deposition
The method on hole surface eliminates the issuable oxide of hole surface, to improve the uniformity of technique.In addition to this, may be used also
To increase reducing gas pretreating process before resistive material layer depositions, so that the ingredient that electrode material surface may be oxidized
It is removed, optimizes the contact of lower electrode and resistive material layer, lifting process uniformity.
It should be noted last that above embodiments are only present pre-ferred embodiments, not it is used to limit this hair
Bright practical range.Equivalent changes and modifications made by i.e. all contents according to scope of the present invention patent all should be the present invention
Technology scope.
Claims (10)
1. a kind of preparation method of resistance-variable storing device, which comprises the following steps:
Step S1: providing a substrate, and the substrate top is equipped with hole；
Step S2: the Multiple depositions electrode material in described hole, to form lower electrode；
Step S3: resistive material layer is formed in the upper surface of the lower electrode and the substrate；
Step S4: top electrode is formed in the top of the resistive material layer.
2. the preparation method of resistance-variable storing device as described in claim 1, which is characterized in that the substrate includes metal interconnecting layer
Layer is stopped with the medium being located above the metal interconnecting layer, wherein the metal interconnecting layer includes interlayer dielectric layer and is formed in
Metal interconnecting wires in the interlayer dielectric layer, described hole is set to the medium and stops in layer, and exposes the part gold
Belong to interconnection line.
3. the preparation method of resistance-variable storing device as described in claim 1, which is characterized in that the electrode material includes nitridation
Titanium.
4. the preparation method of resistance-variable storing device as described in claim 1, which is characterized in that in the step S2 further include:
Before each deposition of electrode material, described hole surface is bombarded using rare gas.
5. the preparation method of resistance-variable storing device as claimed in claim 4, which is characterized in that the rare gas includes argon gas.
6. the preparation method of resistance-variable storing device as described in claim 1, which is characterized in that described hole is by the electrode material
Stop the deposition of the electrode material when filling up.
7. the preparation method of resistance-variable storing device as described in claim 1, which is characterized in that in the step S3 further include:
Before forming the resistive material layer, deoxidation processing is carried out using surface of the reducibility gas to the lower electrode.
8. the preparation method of resistance-variable storing device as claimed in claim 7, which is characterized in that the reducibility gas includes hydrogen
Gas.
9. the preparation method of resistance-variable storing device as claimed in claim 7, which is characterized in that in the step S3 further include:
Before carrying out deoxidation processing to the surface of the lower electrode using reducibility gas, to the upper of the lower electrode and substrate
Surface carries out chemical mechanical grinding, removes the extra electrode material.
10. the preparation method of resistance-variable storing device as described in claim 1, which is characterized in that in the step S2, deposit every time
Electrode material layer thickness be less than described hole diameter 1/6.
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| CN201910808942.5A CN110459676B (en) | 2019-08-29 | 2019-08-29 | Preparation method of resistive random access memory |
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| CN201910808942.5A CN110459676B (en) | 2019-08-29 | 2019-08-29 | Preparation method of resistive random access memory |
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| CN110459676A true CN110459676A (en) | 2019-11-15 |
| CN110459676B CN110459676B (en) | 2023-05-23 |
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| CN110854266A (en) * | 2019-11-27 | 2020-02-28 | 上海华力微电子有限公司 | Resistive random access memory and forming method thereof |
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| US20080138931A1 (en) * | 2006-12-06 | 2008-06-12 | Macronix International Co., Ltd. | Method for Making a Self-Converged Void and Bottom Electrode for Memoery Cell |
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| CN107887393A (en) * | 2016-09-30 | 2018-04-06 | 台湾积体电路制造股份有限公司 | Storage arrangement with single bottom electrode layer |
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| US20080138931A1 (en) * | 2006-12-06 | 2008-06-12 | Macronix International Co., Ltd. | Method for Making a Self-Converged Void and Bottom Electrode for Memoery Cell |
| CN105789439A (en) * | 2016-04-22 | 2016-07-20 | 中国科学院微电子研究所 | Cu-based resistive random access memory manufacturing method and memory |
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| CN110854266A (en) * | 2019-11-27 | 2020-02-28 | 上海华力微电子有限公司 | Resistive random access memory and forming method thereof |
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