CN110459610A - 一种GaN基斜型栅极HEMT器件及其制备方法 - Google Patents
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Abstract
本发明涉及一种GaN基斜型栅极HEMT器件及其制备方法,包括衬底层、沟道层、势垒层、源极、栅极和漏极,衬底层的表面设有所述沟道层,沟道层的表面设有势垒层,势垒层的表面两侧分别设有源极、漏极,在势垒层的表面上,源极、漏极之间设有栅极,栅极的两侧呈斜坡状;其制备方法包括:(1)在衬底层上进行GaN沉积,形成沟道层;(2)在沟道层上生长AlGaN,形成势垒层;(3)在势垒层上,采用栅极透射率渐变技术制作栅极;(4)在势垒层上,在栅极的两侧分别形成源极和漏极。本发明斜型栅极HEMT的制作简单,通过改变栅极版图的透射率渐变方式,得到不同形状的斜栅极结构,提升器件的击穿电压。
Description
技术领域
本发明涉及一种GaN基斜型栅极HEMT器件及其制备方法,属于半导体技术领域。
背景技术
作为一种新型的半导体材料,氮化镓材料得到了越来越多的关注。氮化镓是第三代半导体材料的代表,其电学和光学性质优异,有较宽带隙、直接带隙的优点,耐高温高压,适合各种恶劣条件的应用环境。目前,氮化镓材料主要应用于发光二极管(LED)、半导体激光器(LD)和高电子迁移率晶体管(HEMT)的制造。通过变化材料组分,氮化镓基LED、LD可实现从紫外到红光的波长变化,覆盖了整个可见光波段。尤其是氮化镓蓝色LED+荧光粉的应用,带动了半导体照明领域的快速发展。
由于GaN材料的高电子饱和速度、沟道中的高浓度二维电子气(2DEG)以及较高的临界击穿电场,使得GaN基HEMT器件在高频RF领域比如通讯基站和大电流、低功耗、高压开关器件应用领域具有巨大的应用前景。
功率开关器件的关键是实现高击穿电压、低导通电阻和高可靠性。器件的击穿是由于栅肖特基结的泄漏电流和通过缓冲层的泄漏电流引起的。要提高器件耐压,纵向上需要增加缓冲层的厚度和质量,这主要由工艺技术水平决定;横向上需要漂移区长度增加,这不仅使器件或电路的芯片面积增加、成本增大,更为严重的是,器件的导通电阻增大,进而导致功耗急剧增加,且器件开关速度也随之降低。
现有技术中为了提高氮化镓器件的击穿电压,普遍采用场板技术,在栅极上加一个或者几个金属场板,来调节器件漂移区的电场分布,降低栅极边缘的电场强度,提高器件的击穿电压。
Suemitsu等提出了一种方法来制作斜斜结构的场板提高GaN HEMT击穿电压。用薄势垒层技术(Tetsuya Suemitsu,Kengo Kobayashi,Shinya Hatakeyama,A new processapproach for斜field plates in GaN-based high-electron-mobility transistors,Japanese Journal of Applied Physics 55,01AD02(2016))。通过在PECVD过程中控制H2/NH3混合气的比例来得到多层SiCN并控制栅的斜坡形状制作斜场板结构。使用10层SiCN可以得到的理想的斜场板。230nm栅长的ALGaN/GaN HEMT使用斜场板以后,击穿电压提高了68%,Ft-BVoff提高了4倍。但这种斜型栅极准备技术比较复杂,影响器件的均匀性和一致性。
发明内容
针对现有技术的不足,本发明提供了一种GaN基斜型栅极HEMT器件;
本发明还提供了上述GaN基斜型栅极HEMT器件的制备方法;
术语解释:
1、HEMT,High Electron Mobility Transistor,高电子迁移率晶体管;
2、化学气相沉积技术CVD,利用含有薄膜元素的一种或几种气相化合物或单质、在衬底表面上进行化学反应生成薄膜的方法。
3、原子层淀积ALD,是一种可以将物质以单原子膜形式一层一层的镀在基底表面的方法。原子层沉积与普通的化学沉积有相似之处。但在原子层沉积过程中,新一层原子膜的化学反应是直接与之前一层相关联的,这种方式使每次反应只沉积一层原子。
4、分子束外延MBE,是新发展起来的外延制膜方法,也是一种特殊的真空镀膜工艺。外延是一种制备单晶薄膜的新技术,它是在适当的衬底与合适的条件下,沿衬底材料晶轴方向逐层生长薄膜的方法。该技术的优点是:使用的衬底温度低,膜层生长速率慢,束流强度易于精确控制,膜层组分和掺杂浓度可随源的变化而迅速调整。用这种技术已能制备薄到几十个原子层的单晶薄膜,以及交替生长不同组分、不同掺杂的薄膜而形成的超薄层量子显微结构材料。
本发明的技术方案为:
一种GaN基斜型栅极HEMT器件,包括衬底层、沟道层、势垒层、源极、栅极和漏极,所述衬底层的表面设有所述沟道层,所述沟道层的表面设有所述势垒层,所述势垒层的表面两侧分别设有所述源极、所述漏极,在所述势垒层的表面上,所述源极、所述漏极之间设有所述栅极,所述栅极的两侧呈斜坡状。
斜型栅极可以有效降低栅极侧跌尖峰电场,提升器件的击穿电场强度。
根据本发明优选的,所述衬底层的材质为硅、蓝宝石、碳化硅、氮化稼或稀土氧化物;所述沟道层的材质为GaN;所述势垒层的材质为AlGaN;所述栅极的材质为Ni、Au、Ni、Pt或Au等金属。
根据本发明优选的,所述衬底层的厚度为100-1000μm;
所述沟道层的厚度为0.1-5μm;
所述势垒层的厚度为0.2-8μm;
所述栅极的厚度为0.01-5um。
上述GaN基斜型栅极HEMT器件的制备方法,包括步骤如下:
(1)在温度为50-1500℃、压力为80-300mbar的条件下,在衬底层上进行GaN沉积,形成沟道层;
(2)在温度为80-1200℃的条件下,在沟道层上生长AlGaN,形成势垒层;
(3)采用PECVD、ALD等在AlGaN势垒层上生长厚度为1-300nm的Si3N4、SiO2等钝化层;
(4)在钝化层上,采用栅极透射率渐变技术制作栅极;
(5)在势垒层上,在栅极的两侧分别形成源极和漏极。
根据本发明优选的,所述步骤(4),采用栅极透射率渐变技术制作栅极,包括步骤如下:
A、在钝化层表面涂敷正光刻胶;
B、采用透射率渐变栅极光刻版曝光;正光刻胶因为栅极透射率渐变,导致栅极部分曝光量有差异;
C、采用显影液制作栅极图形,光刻胶因为曝光量不同,腐蚀速率不一致,形成倒梯形结构;
D、采用ICP等离子束刻蚀方法,刻蚀钝化层,至AlGaN势垒层,在钝化层形成倒梯形结构;
E、采用电子束蒸发台,烝镀Ni、Au、Ni、Pt或Au等金属;
F、采用去胶液去除光刻胶并剥离金属层,形成斜型栅极结构。
本发明采用栅极透射率渐变技术制作斜型栅极,可以显著降低斜型栅极HEMT的制作复杂性,通过改变栅极版图的透射率渐变方式,得到不同形状的斜型栅极结构,提升器件的击穿电压。
根据本发明优选的,采用现有的化学气相沉积MOCVD方法或分子束外延MBE方法,在衬底层上进行GaN沉积,形成沟道层;以及在沟道层上生长AlGaN,形成势垒层。
本发明的有益效果为:
1、本发明采用栅极透射率渐变技术制作斜型栅极,可以显著降低斜型栅极HEMT的制作复杂性。
2、通过改变栅极版图的透射率渐变方式,得到不同形状的斜栅极结构,提升器件的击穿电压。
附图说明
图1为本发明GaN基斜型栅极HEMT器件的结构示意图;
图2为本发明栅极透射率渐变技术的示意图;
图3为本发明钝化层上涂敷正光刻胶的示意图;
图4为本发明采用栅极透射率渐变技术光刻胶显影后的剖面图;
1、衬底层,2、沟道层,3、势垒层,4、源极,5、栅极;6、漏极,7、钝化层,8、正光刻胶,9、栅极光刻版。
具体实施方式
下面结合说明书附图和实施例对本发明作进一步限定,但不限于此。
实施例1
一种GaN基斜型栅极HEMT器件,如图1所示,包括衬底层1、沟道层2、势垒层3、源极4、栅极5和漏极6,衬底层1的表面设有沟道层2,沟道层2的表面设有势垒层3,势垒层3的表面两侧分别设有源极4、漏极6,在势垒层3的表面上,源极4、漏极6之间设有栅极5,栅极5的两侧呈斜坡状。
斜型栅极可以有效降低栅极侧跌尖峰电场,提升器件的击穿电场强度。
衬底层1的材质为硅、蓝宝石、碳化硅、氮化稼或稀土氧化物等适合生长Ⅲ-V族化合物的材料;沟道层2的材质为GaN;势垒层3的材质为AlGaN;栅极5的材质为Ni、Au、Ni、Pt或Au等金属。
衬底层1的厚度为100μm;沟道层2的厚度为0.1μm;势垒层3的厚度为0.2μm;栅极5的厚度为0.015um。
实施例2
根据实施例1所述的GaN基斜型栅极HEMT器件,其区别在于,衬底层1的厚度为1000μm;沟道层2的厚度为5μm;势垒层3的厚度为8μm;栅极5的厚度为5um。
实施例3
实施例1或2所述的GaN基斜型栅极HEMT器件的制备方法,包括步骤如下:
上述GaN基斜型栅极HEMT器件的制备方法,包括步骤如下:
(1)在温度为50-1500℃、压力为80-300mbar的条件下,在衬底层上进行GaN沉积,形成沟道层;
(2)在温度为80-1200℃的条件下,在沟道层上生长AlGaN,形成势垒层;
(3)采用PECVD、ALD等在AlGaN势垒层上生长厚度为1-300nm的Si3N4、SiO2等钝化层;
(4)在钝化层上,采用栅极透射率渐变技术制作栅极;包括步骤如下:
A、在钝化层表面涂敷正光刻胶;如图3所示;
B、采用透射率渐变栅极光刻版曝光;正光刻胶因为栅极透射率渐变,导致栅极部分曝光量有差异;栅极透射率渐变技术如图2所示,中间部分全透明,两侧透射率逐渐降低;
C、采用显影液制作栅极图形,光刻胶因为曝光量不同,腐蚀速率不一致,形成倒梯形结构;
D、采用ICP等离子束刻蚀方法,刻蚀钝化层,至AlGaN势垒层,在钝化层形成倒梯形结构;如图4所示。
E、采用电子束蒸发台,烝镀Ni、Au、Ni、Pt或Au等金属;
F、采用去胶液去除光刻胶并剥离金属层,形成斜型栅极结构。
本发明采用栅极透射率渐变技术制作斜型栅极,可以显著降低斜型栅极HEMT的制作复杂性,通过改变栅极版图的透射率渐变方式,得到不同形状的斜型栅极结构,提升器件的击穿电压。
(5)在势垒层上,在栅极的两侧分别形成源极和漏极。
采用现有的化学气相沉积CVD方法、氢化物气相外延HVPE方法、原子层淀积ALD方法或分子束外延MBE方法,在衬底层上进行GaN沉积,形成沟道层;以及在沟道层上生长AlGaN,形成势垒层。
Claims (6)
1.一种GaN基斜型栅极HEMT器件,其特征在于,包括衬底层、沟道层、势垒层、源极、栅极和漏极,所述衬底层的表面设有所述沟道层,所述沟道层的表面设有所述势垒层,所述势垒层的表面两侧分别设有所述源极、所述漏极,在所述势垒层的表面上,所述源极、所述漏极之间设有所述栅极,所述栅极的两侧呈斜坡状。
2.根据权利要求1所述的一种GaN基斜型栅极HEMT器件,其特征在于,所述衬底层的材质为硅、蓝宝石、碳化硅、氮化稼或稀土氧化物;所述沟道层的材质为GaN;所述势垒层的材质为AlGaN;所述栅极的材质为Ni、Au、Ni、Pt或Au。
3.根据权利要求1所述的一种GaN基斜型栅极HEMT器件,其特征在于,所述衬底层的厚度为100-1000μm;所述沟道层的厚度为0.1-5μm;所述势垒层的厚度为0.2-8μm;所述栅极的厚度为0.01-5um。
4.一种权利要求1-3任一所述GaN基斜型栅极HEMT器件的制备方法,其特征在于,包括步骤如下:
(1)在温度为50-1500℃、压力为80-300mbar的条件下,在衬底层上进行GaN沉积,形成沟道层;
(2)在温度为80-1200℃的条件下,在沟道层上生长AlGaN,形成势垒层;
(3)在势垒层上生长厚度为1-300nm的钝化层;
(4)在钝化层上,采用栅极透射率渐变技术制作栅极;
(5)在势垒层上,在栅极的两侧分别形成源极和漏极。
5.根据权利要求4所述的GaN基斜型栅极HEMT器件的制备方法,其特征在于,所述步骤(4),采用栅极透射率渐变技术制作栅极,包括步骤如下:
A、在钝化层表面涂敷正光刻胶;
B、采用透射率渐变栅极光刻版曝光;
C、采用显影液制作栅极图形,形成倒梯形结构;
D、采用ICP等离子束刻蚀方法,刻蚀钝化层,至势垒层,在钝化层形成倒梯形结构;
E、采用电子束蒸发台,烝镀Ni、Au、Ni、Pt或Au;
F、采用去胶液去除光刻胶并剥离金属层,形成斜型栅极结构。
6.根据权利要求4所述的GaN基斜型栅极HEMT器件的制备方法,其特征在于,采用化学气相沉积MOCVD方法或分子束外延MBE方法,在衬底层上进行GaN沉积,形成沟道层;以及在沟道层上生长AlGaN,形成势垒层。
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CN117928769A (zh) * | 2024-03-21 | 2024-04-26 | 山东大学 | 一种确定氮化镓器件沟道载流子温度的方法 |
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