CN110459528A - A kind of New-type radio-frequency transmission structure - Google Patents
A kind of New-type radio-frequency transmission structure Download PDFInfo
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- CN110459528A CN110459528A CN201910677874.3A CN201910677874A CN110459528A CN 110459528 A CN110459528 A CN 110459528A CN 201910677874 A CN201910677874 A CN 201910677874A CN 110459528 A CN110459528 A CN 110459528A
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- 230000005540 biological transmission Effects 0.000 title claims abstract description 27
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 77
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 77
- 239000010703 silicon Substances 0.000 claims abstract description 77
- 239000000758 substrate Substances 0.000 claims abstract description 24
- 230000008054 signal transmission Effects 0.000 claims abstract description 23
- 238000010276 construction Methods 0.000 claims abstract description 10
- 239000010949 copper Substances 0.000 claims description 13
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 11
- 229910052802 copper Inorganic materials 0.000 claims description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 229910052681 coesite Inorganic materials 0.000 claims description 4
- 229910052906 cristobalite Inorganic materials 0.000 claims description 4
- 239000000377 silicon dioxide Substances 0.000 claims description 4
- 229910052682 stishovite Inorganic materials 0.000 claims description 4
- 229910052905 tridymite Inorganic materials 0.000 claims description 4
- YUWURHBDLJOUAP-JSZLBQEHSA-N (2r,6s,12z,13as,14ar,16as)-6-[(tert-butoxycarbonyl)amino]-14a-[(cyclopropylsulfonyl)carbamoyl]-5,16-dioxo-1,2,3,5,6,7,8,9,10,11,13a,14,14a,15,16,16a-hexadecahydrocyclopropa[e]pyrrolo[1,2-a][1,4]diazacyclopentadecin-2-yl 4-fluoro-2h-isoindole-2-carboxylate Chemical compound O=C([C@@]12C[C@H]1\C=C/CCCCC[C@@H](C(N1C[C@@H](C[C@H]1C(=O)N2)OC(=O)N1C=C2C(F)=CC=CC2=C1)=O)NC(=O)OC(C)(C)C)NS(=O)(=O)C1CC1 YUWURHBDLJOUAP-JSZLBQEHSA-N 0.000 claims 12
- 238000005538 encapsulation Methods 0.000 abstract description 2
- 238000004377 microelectronic Methods 0.000 abstract description 2
- 238000000034 method Methods 0.000 description 10
- 238000010586 diagram Methods 0.000 description 8
- 230000008901 benefit Effects 0.000 description 5
- 238000004088 simulation Methods 0.000 description 5
- 230000010354 integration Effects 0.000 description 4
- 238000002955 isolation Methods 0.000 description 4
- 238000007747 plating Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 238000011049 filling Methods 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 230000011664 signaling Effects 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 230000002238 attenuated effect Effects 0.000 description 1
- 238000000708 deep reactive-ion etching Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000000280 densification Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000012447 hatching Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 238000005070 sampling Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
- H01L23/5384—Conductive vias through the substrate with or without pins, e.g. buried coaxial conductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
- H01L23/5386—Geometry or layout of the interconnection structure
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Geometry (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
The invention discloses a kind of New-type radio-frequency transmission structure, including silicon substrate and it is set to radio signal transmission through silicon via TSV and several ground connection through silicon via TSV on silicon substrate；Radio signal transmission through silicon via TSV is set to the circular central surrounded by ground connection through silicon via TSV, formed similar axle construction；The hole interior diameter of radio signal transmission through silicon via TSV is greater than the hole interior diameter of ground connection through silicon via TSV.RF transmitting structures in the present invention are the high aspect ratio TSV of small size in such a way that the hollow structure TSV in traditional aperture is combined, the intracorporal electrical interconnection access of microelectronic chip is extended vertically through in realization, while supporting chip-scale three-dimensional laminated integrated and encapsulation, further reduce package dimension, it is bad to solve high-frequency transmission performance, the larger disadvantage of traditional TSV stress realizes high reliability, low-loss radio frequency vertical interconnection structure.
Description
Technical field
The invention belongs to TSV technology fields, and in particular to a kind of New-type radio-frequency transmission structure.
Background technique
Under complicated Battle Field Electromagnetic, the effect of electronic information equipment how is preferably played, better work is reached
War efficiency becomes more difficult, and to intelligent, the small-sized words of electronic information equipment, more stringent requirements are proposed for lightweight.
TSV (Through Silicon Via) technology, which can provide, extends vertically through the intracorporal electrical interconnection access of microelectronic chip,
It supports chip-scale three-dimensional laminated integrated and encapsulation, has many advantages, such as that small size, high density, high integration and interconnection time delay are small, it can
To substitute the conventional hybrid integration module based on metal cavity or LTCC, module volume is greatly reduced, weight is reduced, is to work as
Preceding radio frequency system is integrated, miniaturization main stream approach.
But traditional TSV has the disadvantage that:
1. full copper filling causes stress larger；
2. the size occupied area of aperture ratio 3:1 is larger, substrate is thicker, and area occupied is bigger；
3. the radio-frequency performance of vertical direction is bad, especially high frequency performance.
In invention
For above-mentioned deficiency in the prior art, New-type radio-frequency transmission structure provided by the invention solves conventional radio frequency biography
The larger problem of stress in defeated structure.
In order to achieve the above object of the invention, the technical solution adopted by the present invention are as follows: a kind of New-type radio-frequency transmission structure, including
Silicon substrate and the radio signal transmission through silicon via TSV being set on silicon substrate and several ground connection through silicon via TSV；
The hole interior diameter of the radio signal transmission through silicon via TSV is greater than the hole interior diameter of ground connection through silicon via TSV.
Further, the radio signal transmission through silicon via TSV is set in the circle surrounded by ground connection through silicon via TSV
The heart, formed similar axle construction.
Further, the aperture ratio of the radio signal transmission through silicon via TSV is 3:1；
The aperture ratio of the ground connection through silicon via TSV is 10:1.
Further, the radio signal transmission through silicon via TSV is that interstitital texture is electroplated in hollow and non-full copper.
Further, the ground connection through silicon via TSV is that interstitital texture is electroplated in hollow full copper.
Further, the spacing between the radio signal transmission through silicon via TSV and ground connection through silicon via TSV is radiofrequency signal
Transmit the half of through silicon via TSV diameter.
Further, the contact surface of the silicon substrate and radio signal transmission through silicon via TSV, silicon substrate and several ground connection
A layer insulating is provided on the contact surface of through silicon via TSV and the surface of silicon substrate.
Further, the insulating layer is SiO2Insulating layer.
The invention has the benefit that
1. structure occupied area is smaller, more conducively High Density Integration: in actual use, package module has multiple vertical simultaneously
Interconnection architecture needs multiple similar axle construction, while also needing to be adequately isolated to each other to guarantee radio-frequency performance, transmission knot
A large amount of ground holes are just needed between structure, in the case where guaranteeing identical ground connection quantity, the ground connection TSV in structure is all using small ruler
Very little high aspect ratio TSV (10:1) is more much smaller than being grounded area used using tradition TSV (3:1).
2. radio frequency is good: similar axle construction can guarantee radio-frequency performance, highdensity ground connection TSV divider wall, it is ensured that
Under same area, multiple RF transmitting structures isolations are more preferable.
Detailed description of the invention
Fig. 1 is New-type radio-frequency transmission structure schematic diagram in the present invention.
Fig. 2 is coaxial configuration schematic diagram in the present invention.
Fig. 3 is New-type radio-frequency transmission structure simulation model schematic diagram in the present invention.
Fig. 4 is New-type radio-frequency transmission structure preparation process schematic diagram in the present invention.
Fig. 5 is two kinds of GSG transmission structure contrast schematic diagrams in embodiment provided by the invention.
Fig. 6 is to transmit schematic diagram using the multi-signal of the method for the present invention design in embodiment provided by the invention.
Fig. 7 is integrally interconnected schematic diagram to be heterogeneous in embodiment provided by the invention.
Fig. 8 is multiple RF transmitting structures distribution schematic diagrams in the present invention.
Wherein: 1, silicon substrate；2, radio signal transmission through silicon via TSV；3, it is grounded through silicon via TSV.
Specific embodiment
A specific embodiment of the invention is described below, in order to facilitate understanding by those skilled in the art this hair
It is bright, it should be apparent that the present invention is not limited to the ranges of specific embodiment, for those skilled in the art,
As long as various change is in the spirit and scope of the present invention that the attached claims limit and determine, these variations are aobvious and easy
See, all are using the innovation and creation of present inventive concept in the column of protection.
As shown in Figure 1, a kind of New-type radio-frequency transmission structure, including silicon substrate 1 and the radiofrequency signal being set on silicon substrate
Transmit through silicon via TSV 2 and several ground connection through silicon via TSV 3；
The hole interior diameter of radio signal transmission through silicon via TSV 2 is greater than the hole interior diameter of ground connection through silicon via TSV 3.
Above-mentioned radio signal transmission through silicon via TSV 2 is set to the circular central surrounded by ground connection through silicon via TSV 3, with it
Form similar axle construction；Similar axle construction can guarantee radio-frequency performance, highdensity ground connection TSV divider wall, it is ensured that in phase
With under area, multiple RF transmitting structures isolations are more preferable.
The aperture ratio of above-mentioned radio signal transmission through silicon via TSV 2 is 3:1, and is hollow and non-full copper plating filling knot
Structure, it is possible to reduce stress, while being more advantageous to the transmission of radiofrequency signal；
The aperture ratio for being grounded through silicon via TSV 3 is 10:1, and interstitital texture is electroplated for hollow full copper；Through silicon via TSV is
Small size is more advantageous to diminution volume compared to traditional TSV, the high aspect ratio TSV of small size, realizes highly dense to the TSV of aspect ratio
Degree is integrated, while the small-bore hole high aspect ratio TSV is also much smaller relative to traditional full copper TSV stress, is guaranteed by Redundancy Design
The advantages of reliability of transmission structure, which sufficiently combines two cun of size TSV.
In order to realize high frequency signal transmission, similar axle construction is generally used, by taking hollow structure TSV as an example, such as Fig. 1 (b) institute
Show.Center TSV transmitting radio frequency signal, surrounding TSV ground connection.Since processing limits, the hole spacing need >=0.5* of Kong Yukong is straight
Diameter, therefore aperture is bigger, it is peripherally more sparse.The structure combined using size TSV, the TSV of transmitting radio frequency signal are still adopted
With the preferably hollow TSV of radio-frequency performance, and surrounding is grounded TSV using small size TSV, and benefit is ground connection TSV to TSV quality itself
It is of less demanding, it is only necessary to connection, therefore small size TSV can form the ground encirclement structure of more crypto set, while occupy face
Long-pending also very little.
Contact surface, silicon substrate 1 and several ground connection silicon of above-mentioned silicon substrate 1 and radio signal transmission through silicon via TSV 2 lead to
One layer of SiO is provided on the contact surface of hole TSV 3 and the surface of silicon substrate 12Insulating layer.
In one embodiment of the invention, provide the transmission structure design and the preparation method is as follows:
1. selected silicon substrate plate thickness, determines hollow TSV dimension D 2, as shown in Figure 2；
2. calculating the dimension D 1 peripherally of coaxial configuration with simulation software, as shown in Figure 3；
3. calculated size is brought into above structure, as shown in figure 3, central hollow TSV diameter D2, surrounding is grounded
The diameter D1 of TSV ring structure, ground connection TSV diameter itself are determined that spacing is using between the minimum in the aperture 0.5* by silicon substrate plate thickness
Away from establishing simulation model, be finely adjusted to practical structures, to meet actual operation requirements.
The technique implementation of the structure is as shown in Figure 4.Process is as follows:
(a) standby piece, prepares small size TSV: being made the TSV blind hole of big small-bore of DRIE technique；
(b) it deposits SiO2 insulating layer: being formed and caused in surface of silicon and small size TSV blind hole side wall by thermal oxide mode
Close SiO2 insulating layer；
(c) the continuous barrier layer the TiW/Cu seed layer of one layer of densification is sputtered on silicon wafer surface and TSV blind hole side wall, used
Copper plating process system fills the high aspect ratio TSV blind hole of small size, and CMP removes electroplating surface and thickeies layers of copper and the resistance of TiW/Cu seed layer
Barrier；
(d) attenuated polishing technique: print is placed on slide glass by the way of being temporarily bonded, and the back side is thinned, ground, thrown
Light technology, until the sudden and violent small size TSV that leaks out interconnects one end, PECVD deposited oxide layer, using RIE technique in oxide layer uplifting window
Mouthful, it leaks out copper TSV and interconnects one end.Since TSV size is different, small size TSV plating filling is completed, and macropore TSV just completes side
Wall plating forms hollow structure TSV, therefore big aperture TSV can be completed with simultaneous processing.
It should be noted that in the present invention, when designing and producing the RF transmitting structures, only transmitting radio frequency signal is big
Aperture through silicon via TSV needs to carry out design of Simulation process, other are used for transmission the small-bore through silicon via TSV design of ground signalling etc.
Shi Buyong carries out simulation process and has therefore saved the Production Time of transmission structure to a certain extent.
In one embodiment of the invention, other RF transmitting structures can be derived according to this structure by providing；The present invention
Structure is suitable for any radio frequency vertical interconnection structure of silicon substrate, and wherein the large aperture TSV of radiofrequency signal sampling hollow structure, has
Conducive to high frequency signal transmission, other signals (ground connection, digital and analog signaling) use the small-bore TSV of hatching solid, effect packet
Isolation, shielding, digital signal or analog signal interconnection are included, is conducive to reduce substrate area.
For example, shown in traditional GSG structure such as Fig. 5 (a), small-bore TSV therein and large aperture TSV spacing distance compared with
Greatly, it according to the quantity and arrangement mode of the adjustable ground connection through silicon via TSV of simulation result, is adjusted to big shown in Fig. 5 (b)
The GSG structure that small mixing is constituted.
Structure of the invention can be used as radio frequency, ground connection, and the vertical interconnection of the multi-signals such as number or analog signal is applicable in
In heterogeneous integrated (as shown in Figure 6), using when machine integrated radio frequency chip, the prevention at radio-frequency port mutual contact mode of chip is hollow on silicon substrate
Large aperture TSV, the power supply of chip, control port use small-bore TSV, as shown in Figure 7.
In the description of the present invention, it is to be understood that, term " center ", " thickness ", "upper", "lower", "horizontal",
The orientation or positional relationship of the instructions such as "top", "bottom", "inner", "outside", " radial direction " is that orientation based on the figure or position are closed
System, is merely for convenience of description of the present invention and simplification of the description, rather than the equipment of indication or suggestion meaning or element must have
Specific orientation is constructed and operated in a specific orientation, therefore is not considered as limiting the invention.In addition, term " the
One ", " second ", " third " are used for descriptive purposes only and cannot be understood as indicating or suggesting relative importance or implicitly indicate
The quantity of technical characteristic.Therefore, one can be expressed or implicitly include by the feature of " first ", " second ", " third " by limiting
Or more this feature.
The invention has the benefit that
1. structure occupied area is smaller, more conducively High Density Integration: in actual use, package module has multiple vertical simultaneously
Interconnection architecture needs multiple similar axle construction, while also needing to be adequately isolated to each other to guarantee radio-frequency performance, transmission knot
A large amount of ground holes are just needed between structure, in the case where guaranteeing identical ground connection quantity, the ground connection TSV in structure is all using small ruler
Very little high aspect ratio TSV (10:1) is more much smaller than being grounded area used using tradition TSV (3:1).
2. radio frequency is good: similar axle construction can guarantee radio-frequency performance, highdensity ground connection TSV divider wall, it is ensured that
Under same area, multiple RF transmitting structures isolations are more preferable (as shown in Figure 8).
Claims (8)
1. a kind of New-type radio-frequency transmission structure, which is characterized in that including silicon substrate (1) and the radio frequency being set on silicon substrate (1)
Signal transmits through silicon via TSV (2) and several ground connection through silicon via TSV (3)；
The hole interior diameter of the radio signal transmission through silicon via TSV (2) is greater than the hole interior diameter of ground connection through silicon via TSV (3).
2. New-type radio-frequency transmission structure according to claim 1, which is characterized in that the radio signal transmission through silicon via
TSV (2) is set to the circular central surrounded by ground connection through silicon via TSV (3), formed similar axle construction.
3. New-type radio-frequency transmission structure according to claim 1, which is characterized in that the radio signal transmission through silicon via
The aperture ratio of TSV (2) is 3:1；
The aperture ratio of ground connection through silicon via TSV (3) is 10:1.
4. New-type radio-frequency transmission structure according to claim 1, which is characterized in that the radio signal transmission through silicon via
TSV (2) is that interstitital texture is electroplated in hollow and non-full copper.
5. New-type radio-frequency transmission structure according to claim 1, which is characterized in that during the ground connection through silicon via TSV (3) is
Interstitital texture is electroplated in empty full copper.
6. New-type radio-frequency transmission structure according to claim 1, which is characterized in that the radio signal transmission through silicon via
Spacing between TSV (2) and ground connection through silicon via TSV (3) is the half of radio signal transmission through silicon via TSV (2) diameter.
7. New-type radio-frequency transmission structure according to claim 1, which is characterized in that the silicon substrate (1) and radiofrequency signal
Transmit the contact surface of through silicon via TSV (2), the contact surface and silicon substrate (1) of silicon substrate (1) and several ground connection through silicon via TSV (3)
Surface on be provided with a layer insulating.
8. New-type radio-frequency transmission structure according to claim 5, which is characterized in that the insulating layer is SiO2Insulating layer.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910677874.3A CN110459528A (en) | 2019-07-25 | 2019-07-25 | A kind of New-type radio-frequency transmission structure |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201910677874.3A CN110459528A (en) | 2019-07-25 | 2019-07-25 | A kind of New-type radio-frequency transmission structure |
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Cited By (3)
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|---|---|---|---|---|
| CN111244049A (en) * | 2020-01-20 | 2020-06-05 | 北京大学 | Low-loss radio frequency vertical electric connection structure with embedded heat dissipation cavity and manufacturing method |
| CN113097183A (en) * | 2021-03-29 | 2021-07-09 | 电子科技大学 | Radio frequency vertical interconnection transmission structure based on silicon through hole |
| CN116207527A (en) * | 2023-05-05 | 2023-06-02 | 成都恪赛科技有限公司 | Radio frequency vertical interconnection structure |
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